JP2913992B2 - Color filter and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a color filter used for a liquid crystal display device, and more particularly, to a method for manufacturing a color filter having a transparent conductive layer excellent in etching characteristics and low resistance. It relates to a manufacturing method.

[0002]

2. Description of the Related Art In general, as a transparent conductive layer, an oxide semiconductor such as ITO in which tin is doped with indium oxide by several percent is used. For liquid crystal display applications, there is a strong demand for lowering the resistance of the transparent conductive layer, and it is also required that the transparent conductive layer has good etching characteristics in order to form a pattern corresponding to pixels. Therefore, the improvement of the transparent conductive layer has been continued.

[0003]

In the production of a color filter, when a transparent conductive layer is directly laminated on a protective layer made of an organic material, the composition and state of the protective layer adversely affect the film quality of the transparent conductive layer. For example, there is a problem that the film properties of the transparent conductive layer are reduced as compared with a case where the transparent conductive layer is directly laminated on a glass substrate. That is, there are disadvantages in that the resistance value is increased, the side etching is large, and irregular side etching occurs.

[0004] Therefore, the present inventors have proposed a color filter having a silicon oxide layer between the protective layer and the transparent conductive layer in order to prevent the interaction between the protective layer and the transparent conductive layer (Japanese Patent Application No. 2002-214,878). JP-A-3-109264). Among them, a heat treatment method or a plasma treatment method has been proposed as a method for forming a silicon oxide layer. However, depending on the type of the protective layer and the production lot, a silicon oxide layer may not be sufficiently obtained by any of the above methods, and the resistance value of the transparent conductive layer may be increased or the etching characteristics may be significantly reduced. There was a problem to do.

The inventors of the present invention have made intensive studies to solve the above problems, and as a result, have arrived at the manufacturing method of the present invention.
An object of the present invention is to obtain a color filter having a transparent conductive layer having low resistance and excellent etching characteristics with good reproducibility.

[0006]

SUMMARY OF THE INVENTION The object of the present invention is as follows.
This is achieved by the following manufacturing method.

That is, a method of manufacturing a color filter comprising a substrate, an organic coloring layer, a silicone protective layer, a silicon oxide layer and a transparent conductive layer laminated in this order, wherein the silicon oxide layer has a temperature of 75 ° C. or higher. A color filter, which is formed by subjecting the surface of the silicone protective layer to a plasma treatment while heating.

The substrate used in the present invention is not particularly limited, and may be glass, polyethylene terephthalate,
Although plastics such as polycarbonate can be used, glass is more preferable in terms of heat resistance and dimensional stability. The insertion of a light-shielding layer, a layer for preventing the interaction between the substrate and the organic coloring layer, or the like is appropriately permitted between the substrate and the organic coloring layer. As the light shielding layer, a chromium film or a partially oxidized chromium film is preferably used, and is formed by a vacuum evaporation method, a sputtering method, or the like. As a light-shielding method, a method of reducing transmitted light by overlapping an organic colored layer in addition to inserting a light-shielding layer can also be used.

The organic coloring layer used in the present invention is not particularly limited, but usually a layer mainly composed of a mixture of a coloring agent and a polymer is preferably used. As the coloring agent, pigments and dyes are used, and particularly, pigments having good heat resistance and weather resistance, such as phthalocyanine pigments and isoindolinone pigments, are preferred. On the other hand, the polymer is 2
A polymer material that does not soften, decompose, or discolor even at a high temperature heat treatment of 00 ° C. or more is preferably used, and an epoxy resin, a urethane resin, a urea resin, an acrylic resin, a polyvinyl alcohol resin, a polyimide resin, and a mixture thereof are preferably used. . Among them, a polyimide resin having excellent heat resistance is particularly preferable. The organic coloring layer is usually formed by a coating method or a printing method. Further, resins obtained by imparting photosensitivity to these are also preferably used.

[0010] The silicone protective layer used in the present invention comprises at least a silicone resin component, and is obtained by polycondensation of an organosilane.
If necessary, other components may be added in addition to the silicone component.Examples include an imide-modified silicone resin obtained by polycondensation of an organosilane and a compound having an imide group. Since it has excellent hardness, transparency, heat resistance, flatness during application and adhesion, it has particularly preferable characteristics in practical use.

Examples of the organosilane include trialkoxysilanes such as methyltrimethoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, and vinyltrimethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, methylphenyldimethoxysilane, and methylphenyldimethoxysilane. Examples thereof include dialkoxysilanes such as ethoxysilane, and monoalkylsilanes such as trimethylmethoxysilane, triethylethoxysilane, and triphenylethoxysilane. In addition, a hydrolyzate or a partial condensate of an organosilane can be used instead of the organosilane. In addition, these organosilanes can be used as a mixture of a plurality of types instead of one type. At least one of the organosilanes used preferably has a molecular weight of 500 or less, more preferably 200 or less. It is preferable that at least one of the organosilanes used is a dialkoxysilane or a tetraalkoxysilane in that the silicon oxide layer is easily formed.

As the compound having an imide group, a condensation reaction type polyimide precursor or the like is used. For example, a polyamic acid solution, that is, a condensation reaction type polyimide precursor can be obtained by reacting an aminosilane compound with a tetracarboxylic dianhydride, biphenyltetracarboxylic dianhydride, or the like in a solvent. Tetracarboxylic dianhydride, biphenyltetracarboxylic acid 2
Specific examples of anhydrides include pyromellitic dianhydride, 3,
3 ', 4,4'-biphenyltetracarboxylic dianhydride, 3,
3 ', 4,4'-benzophenonetetracarboxylic dianhydride and 4,4'-oxydiphthalic dianhydride can be exemplified. Specific examples of the aminosilane compound include 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminobutyltrimethoxysilane,
Examples thereof include 3-aminobutyltriethoxysilane. In addition to the imide group, the polyimide may have each substituent such as an amino group, an amide group, a carboxyl group, and a sulfonamide group as long as the heat resistance of the polyimide is not impaired.

In order to improve the coating properties and adhesion of the silicone protective layer, addition of a nonionic surfactant or an adhesion-imparting agent such as a leveling agent or a coupling agent is appropriately permitted.

Next, the surface of the silicone protective layer is subjected to plasma treatment while heating to alter the quality, thereby forming a silicon oxide layer.

As a method for heating the silicone protective layer, a method of heating from the substrate side using an electric heater or a method of irradiating and heating the silicone protective layer using a halogen lamp can be used. The heating temperature should be at least 75
° C or higher, preferably 100 ° C or higher, more preferably 2 ° C or higher.
00 ° C or higher, most preferably 250 ° C or higher,
It is preferable to raise the temperature because the plasma processing effect described later is sufficiently exhibited. The upper limit of the heating temperature is a temperature that is lower than or equal to the thermal decomposition temperature of the silicone protective layer and does not hinder each component of the color filter. In reality, when inorganic glass is used for the substrate, the glass transition temperature of the substrate is the lowest, and when plastic is used for the substrate, the lowest of the melting temperature of the substrate and the thermal decomposition temperature of the organic coloring layer and the silicone protective layer. Temperature is the upper limit. When an inorganic glass is used for the substrate, the glass transition temperature of the substrate is usually as high as 600 ° C., and therefore, the lower limit of the thermal decomposition temperature of the organic coloring layer or the silicone protective layer is actually the upper limit.

In the present invention, the plasma treatment may be any method as long as the object is exposed to a glow discharge. For example, a direct current glow discharge method, a high frequency discharge method,
A microwave discharge method or the like can be used. Among these, the high-frequency discharge method is simple and has a large processing effect, and is most preferable.
When a glow discharge is generated under reduced pressure, in order to obtain a transparent conductive layer having a low resistance and excellent etching characteristics, the pressure during the treatment is usually preferably in the range of 10 ^{-3 to} 20 Torr, preferably 10 ^-2. More preferably, the range is from 5 to 5 Torr. As the processing atmosphere, air, neon, argon, helium, nitrogen, oxygen and a mixed gas thereof can be used.
In order to form a high-quality silicon oxide layer at a high speed and to suppress deterioration such as excessive oxidation of the silicone protective layer, air, argon, nitrogen, or the like is preferable. Further, a glow discharge in a mixed gas atmosphere of helium or a ketone such as argon and acetone under atmospheric pressure, which is called normal pressure plasma, can also be used.

FIG. 1 shows an example of a plasma processing apparatus that can be used in the present invention. A color filter sample 4 in which a substrate, an organic coloring layer, and a silicone protective layer are laminated in this order on the lower electrode 3 also serving as a heater is placed with the silicone protective layer facing upward, and the inside of the chamber 1 is evacuated through an exhaust port 9. .
At the same time, the color filter sample 4 is heated to a predetermined temperature using the heater 6 and the heater power supply 7. After gas is introduced into the chamber from the gas inlet 8 and reaches a predetermined pressure, a predetermined amount of high-frequency power is applied from the high-frequency power supply 5,
Plasma is generated between the upper electrode 2 and the lower electrode 3, and the color filter sample 4 is subjected to plasma processing for a predetermined time.

The electric power supplied to the plasma is set to 0.1 per m ² of electrode.
It is preferable to input about 5 kW to 20 kW, and more preferably 1 kW to 10 kW. If the input power is further increased, excessive deterioration of the silicone protective layer occurs, which is not preferable, and if the input power is lower than this, the processing effect is not sufficient, which is not preferable. The processing time is preferably from 10 seconds to 10 minutes, more preferably from 1 minute to 5 minutes. If the treatment time is longer than this, excessive degradation of the silicone protective layer occurs, which is not preferable. If the treatment time is shorter than this, the treatment effect is not sufficient, which is not preferable. The product of plasma input power and processing time is
It is preferably 25 kW · sec to 10000 kW · sec, more preferably 50 kW · sec to 5000 kW · sec, more preferably 100 kW · sec to 2500 kW · sec. In addition, the higher the heating temperature of the silicone protective layer, the lower the plasma input power and the shorter the processing time, which is preferable because the productivity is improved.

The thickness of the silicon oxide layer is 0.025 to
It is preferably in the range of 0.5 μm, more preferably 0.075 to 0.2 μm. If the thickness of the silicon oxide layer is too small, the effect of lowering the resistance value of the transparent conductive layer decreases, and the effect of improving the etching characteristics also decreases, which is not preferable. On the other hand, if the thickness is too large, cracks are likely to occur, and the productivity also deteriorates, which is not preferable. The thickness of the silicon oxide layer can be controlled by the heating temperature of the silicone protective layer and the magnitude of the power supplied to the plasma. Since the thickness of the silicon oxide layer can be increased as the heating temperature is increased and the plasma input power is increased, it can be adjusted as needed.

The silicon oxide layer in the present invention is a layer mainly composed of silicon and oxygen, and has a non-stoichiometric composition represented by SiO _{x as} well as a stoichiometric composition of SiO _2. There may be. The value of X is 0.
The range of 8 ≦ X ≦ 2.2 is preferable in order to reduce the resistance value of the transparent conductive layer provided on the silicon oxide layer and to improve the etching characteristics.
More preferably, it is in the range of 2.0.

It is preferable that a boundary layer having a continuously changing composition is formed between the silicon oxide layer and the silicone protective layer. The boundary layer has an intermediate composition between the silicon oxide layer and the silicone protective layer, and the composition of each element is continuously from the composition in the silicon oxide layer to the original composition of the silicone protective layer before the plasma treatment. A layer that is changing. The thickness of the boundary layer is preferably at least 0.02 μm in order to reduce the resistance value of the transparent conductive layer and to improve the etching characteristics, and more preferably 0.05 μm.
m or more, more preferably 0.1 μm or more.

As described above, the silicon oxide layer can be formed with good reproducibility and the silicon oxide layer can be formed only on the surface of the silicone protective layer by the plasma treatment while heating the silicone protective layer. is there.

Finally, a transparent conductive layer is provided on the silicon oxide layer and used as an electrode. Transparent conductive layer is usually CVD
Method, a vacuum evaporation method, a sputtering method, a coating method, and the like. Among them, in order to obtain a highly transparent and low-resistance transparent conductive layer, a vacuum evaporation method and a sputtering method are preferable. In particular, the magnetron sputtering method has a high film forming speed and is most preferable. As the transparent conductive layer, tin oxide, indium oxide, zirdinium oxide, zinc oxide,
Cadmium oxide, tin-added indium oxide (ITO), tin-added cadmium oxide, etc. are used.
Are particularly preferred in terms of high transparency and low resistance. ITO
Is preferably in the range of 3 to 15% by weight to reduce the resistance value, and more preferably 5 to 13% by weight. The thickness of the transparent conductive layer varies depending on the required surface resistance value, but is preferably in the range of 0.005 to 0.3 μm, and more preferably in the range of 0.01 to 0.2 μm.

The thickness and composition of the transparent conductive layer, silicon oxide layer and boundary layer can be known by a combination of ion etching and Auger electron spectroscopy.

FIG. 2 shows an example of a color filter obtained by the manufacturing method of the present invention, and shows a composition distribution in a depth direction from a transparent conductive layer to a silicone protective layer. In the present invention, the position A where the concentration of the main element (indium in FIG. 2) constituting the transparent conductive layer becomes half of the concentration at the center in the thickness direction of the transparent conductive layer is defined as the boundary A between the transparent conductive layer and the silicon oxide layer. And In addition, the boundary between the silicon oxide layer and the boundary layer was located at a position B at which carbon atoms began to increase. Further, the boundary layer was formed from the position B to the position C at which the composition of the silicone protective layer was recovered.

Hereinafter, an outline of an example of a method for manufacturing a color filter of the present invention will be described. A light-shielding layer made of chromium is formed on a glass substrate by a sputtering method, and processed into a lattice by a photolithography method. Three types of pastes in which red, blue, and green pigments, a polymer, and a solvent are mixed and dispersed are prepared. After applying each paste on the glass substrate on which the lattice-like chromium layer is formed and semi-curing, a stripe-shaped green organic coloring layer corresponding to the pixel is formed by a photolithography method. Similarly, after forming pixels of three colors, an imide-modified silicone resin obtained by copolymerizing an organosilane and a compound having an imide group is applied and cured to form a silicone protective layer. By subjecting the substrate provided with the silicone protective layer to plasma treatment while heating under predetermined conditions, a silicone oxide layer and a boundary layer are formed on the surface of the silicone protective layer. Next, an ITO transparent conductive layer is formed by a sputtering method, and processed into a stripe shape by a photolithography method. Thus, a color filter is obtained.

According to the present invention, since the plasma treatment is performed while heating the silicone protective layer, only the surface layer can be modified into a silicon oxide layer efficiently and with good reproducibility.
For this reason, the film quality of the transparent conductive layer laminated thereon is significantly improved, and a transparent conductive layer having a small resistance value and excellent etching characteristics can be obtained.

[Method of measuring and evaluating characteristics] (1) Method of measuring composition distribution in the depth direction Auger electron spectrometer (JAMP- manufactured by JEOL Ltd.)
10S) was used.

(2) Method of Evaluating Etching Characteristics The transparent conductive layer was etched into striped electrodes by photolithography. After applying a photoresist on the transparent conductive layer, drying, exposure and development are performed to form a stripe pattern. Next, after removing the transparent conductive layer of the exposed portion (the striped portion where the resist pattern is not provided) with an etchant, the resist pattern was washed away with an organic solvent. The etching solution is a 2: 1 weight ratio of concentrated hydrochloric acid and a 38% by weight aqueous ferric chloride solution.
, And over-etched for 2 minutes and 30 seconds while heating to 40 ° C.

The etching characteristics were evaluated from the side etching (expansion of the etching width from the width of the exposed portion of the resist pattern) and the linearity of the striped electrode.
Side etching was as small as 15% or less, and there was no irregular side etching and the linearity of the stripe was good. In addition, the side etching was obtained by Expression 1.

[0031]

(Equation 1) (3) Surface resistance measurement method Four-probe resistance meter (Kyowa Riken Co., Ltd. model K-705RD)
Was used.

[0032]

The present invention will be specifically described below with reference to examples.

Example 1 A chromium light-shielding layer having a thickness of 0.1 μm was formed on a glass substrate by a sputtering method, and one of them was formed by a photolithography method at a pitch of 110 μm, and in a direction perpendicular thereto, a pitch of 330 μm and a line width of 30 μm. It was processed into a lattice shape. Color Index No. 73905 for red, green and blue pigments respectively
Colo, a quinacridone pigment represented by Pigment Red 209
r Index No. 74160 Pigment Green 36 Color index No. 74160 Pigment
A phthalocyanine blue pigment represented by Blue 15-4 was prepared. A transparent polyimide precursor solution (“Semico Fine” SP-901 manufactured by Toray Industries, Inc.) and the above pigment were mixed and dispersed, respectively, to obtain three kinds of pastes of red, green and blue.
A green paste is applied to the glass on which the lattice-shaped chrome light-shielding layer is formed, and after semi-curing, a striped stripe having a width of 90 μm and a pitch of 330 μm corresponding to pixels is filled by photolithography so as to fill the openings of the lattice. A green organic coloring layer was formed and cured. The thickness of the organic coloring layer was 1.5 μm. Similarly, red and blue organic coloring layers were formed. After hydrolysis by adding acetic acid to each of methyltrimethoxysilane and dimethyldimethoxysilane,
The mixture was mixed 1: 1 to obtain an organosilane condensate. 3,3
´, 4,4´-benzophenonetetracarboxylic dianhydride and
N-methyl- with 3-aminopropyltriethoxysilane
In a 2-pyrrolidone solvent, they were mixed at a molar ratio of 1: 2 and reacted to obtain a condensate having an imide group. The organosilane mixture and the condensate having the imide group, and n
-Methyl-2-pyrrolidone in a weight ratio of 7: 2: 4 was applied to a substrate on which red, blue, and green organic coloring layers were formed and cured to obtain a polyimide-modified silicone resin. A silicone protective layer having a thickness of 2 μm was obtained.

The plasma processing machine shown in FIG.
While heating to 0 ° C, under an argon atmosphere of 0.5 Torr,
The surface of the silicone protective layer was subjected to a plasma treatment for 1 minute at a power of 2.2 kW / m ² . Power supply is 100kHz
z high frequency power supply was used.

Next, an IT containing 10% by weight of tin oxide was used.
A transparent conductive layer was formed by a sputtering method using an O target (manufactured by Mitsui Kinzoku Mining). The evacuation time before forming ITO was 60 minutes, and the thickness of the transparent conductive layer was 0.15 μm.

A photoresist ("Microposit" RC-100, Shipley) having a width of 290 μm and a pitch of 330 μm in a direction perpendicular to the stripes of the organic coloring layer.
(A 40 μm width of the exposed portion) was provided, and the ITO transparent conductive layer was etched in a stripe shape so as to fill the openings of the grid-like chrome light-shielding layer.

As described above, the steps from the preparation of the polyimide-modified silicone polymer to the step of forming the transparent conductive layer were repeated five times. The surface resistance of the ITO transparent conductive layer was as small as 17.5 Ω / □ on average, and the average also from +1.1 -
The range of 0.9Ω / □ was sufficiently small. The linearity of the ITO stripe electrode was good, and the side etching was as small as 5.5% on average. In addition, Saidoe
Variations in etching at -0.5% range <br/> from + 2.0%, were small rather reproducibility even better.

When the composition distribution in the depth direction of the color filter was examined by Auger electron spectroscopy from the side of the ITO transparent conductive layer, a 0.15 μm-thick silicon oxide layer was formed between the silicone protective layer and the ITO transparent conductive layer. There was a material layer, and on the substrate side there was a boundary layer of 0.15 μm in which the composition was continuously changed.

Example 2 In the same manner as in Example 1, red, blue, and green organic coloring layers and a silicone protective layer made of a polyimide-modified silicone polymer were obtained on the organic coloring layers.

In the plasma processing machine shown in FIG.
While heating to 0 ° C, under an argon atmosphere of 0.5 Torr,
The surface of the silicone protective layer was subjected to a plasma treatment for 3 minutes at an input power of 4.5 kW / m ² . Power supply is 100kHz
z high frequency power supply was used.

Next, an IT containing 10% by weight of tin oxide was used.
A transparent conductive layer was formed by a sputtering method using an O target. The evacuation time before forming ITO was 60 minutes, and the thickness of the transparent conductive layer was 0.15 μm.

A photoresist pattern having a width of 290 μm and a pitch of 330 μm was provided in a direction perpendicular to the stripes of the organic coloring layer, and the ITO transparent conductive layer was etched in a stripe shape so as to fill the openings of the grid-like chrome light-shielding layer. .

As described above, the steps from the preparation of the polyimide-modified silicone polymer to the step of forming the transparent conductive layer were repeated five times, and the surface resistance of the ITO transparent conductive layer was as small as 18.0 Ω / □ on average, and showed a variation. Also from +0.8-
The range of 1.0Ω / □ was sufficiently small. The linearity of the ITO stripe electrode is good, and the side etching is 10.
It was as small as 5% and good. Further, in the range <br/> variation of side etching from + 4.5% -3.0%, rather small
The reproducibility was also good. When the composition of the color filter in the depth direction was examined by Auger electron spectroscopy from the ITO transparent conductive layer side, a silicon oxide layer having a thickness of 0.08 μm was formed between the silicone protective layer and the ITO transparent conductive layer. There was a boundary layer of 0.08 μm continuously changing composition on the substrate side.

Comparative Example 1 In the same manner as in Example 1, a red, blue, and green organic coloring layer and a silicone protective layer made of a polyimide-modified silicone polymer were obtained on the organic coloring layer.

In the plasma processing machine shown in FIG.
Under a 0.5 Torr argon atmosphere, the surface of the silicone protective layer was subjected to a plasma treatment for 3 minutes at an input power of 7.5 kW / m ² . As a power source, a high frequency power source of 100 kHz was used.

Next, an IT containing 10% by weight of tin oxide was used.
A transparent conductive layer was formed by a sputtering method using an O target. The evacuation time before forming ITO was 60 minutes, and the thickness of the transparent conductive layer was 0.15 μm.

A photoresist pattern having a width of 290 μm and a pitch of 330 μm was provided in a direction perpendicular to the stripes of the organic coloring layer, and the ITO transparent conductive layer was etched in a stripe shape so as to fill the openings of the lattice-like chrome light-shielding layer.

As described above, the steps from the preparation of the polyimide-modified silicone polymer to the step of forming the transparent conductive layer were repeated five times, and the surface resistance of the ITO layer was 20.3 on average.
Ω / □, and the variation is from +2.3 to -1.2Ω /
The range of □ was large. In addition, irregular side etching was observed in the ITO stripe electrode, and the linearity was poor. Side etching is as large as 103.3%, the variation is large and the range of + 36.0% of -74.3%
Reproducibility was also poor.

When the composition distribution in the depth direction of the color filter sample having the largest side etching was examined by Auger electron spectroscopy from the ITO layer side, a silicon oxide layer was found between the silicone protective layer and the ITO film. No boundary layer was observed on the substrate side.

[0050]

According to the manufacturing method of the present invention, since the plasma processing is performed while heating, compared with the conventional plasma processing alone, it requires less power and is more efficient in a shorter time.
Moreover, a silicon oxide layer can be formed on the surface of the silicone protective layer with good reproducibility. In addition, since the transparent conductive layer is formed through the silicon oxide layer after forming the silicon oxide layer on the surface of the silicone protective layer, the resistance value is smaller than when the transparent conductive layer is formed directly on the silicone protective layer. In addition, a transparent conductive layer having more excellent etching characteristics can be obtained with good reproducibility. This is an excellent property which is equal to or better than that of the case where it is formed directly on a glass substrate. It is very important that the resistance value of the transparent conductive layer is small because the delay of the liquid crystal driving signal is suppressed, a larger display can be realized, and the load on the liquid crystal driving circuit is reduced. When the silicon oxide layer is not provided, remarkable side etching or uneven side etching is likely to occur when the transparent conductive layer is slightly over-etched. However, when the silicon oxide layer is provided, good etching is performed. Was made. The fact that a good pattern can be obtained even by over-etching has a great effect of stabilizing the manufacturing process and improving the yield. Further, the presence of the silicon oxide layer and the boundary layer having a continuously changing composition between the silicon oxide layer and the silicone protective layer suppress generation of cracks due to heat history and cleaning at the time of manufacturing a liquid crystal display device. There was also an effect to be done.

[Brief description of the drawings]

FIG. 1 is an example of a plasma processing apparatus for performing a manufacturing method of the present invention.

FIG. 2 is an example of a composition distribution in a depth direction of a color filter obtained by a manufacturing method of the present invention.

[Explanation of symbols]

 1: Chamber 2: Upper electrode 3: Lower electrode 4: Color filter sample 5: High frequency power supply 6: Heater 7: Power supply for heater 8: Gas inlet 9: Exhaust port A: Between transparent conductive layer and silicon oxide layer Boundary B: Boundary between silicon oxide layer and boundary layer C: Boundary between boundary layer and silicone protective layer

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) G02F 1/1343 G02F 1/1335 505

Claims (3)

(57) [Claims] 1. A method for manufacturing a color filter comprising laminating a substrate, an organic coloring layer, a silicone protective layer, a silicon oxide layer and a transparent conductive layer in this order, wherein the silicon oxide layer has a temperature of 75 ° C. or higher. A color filter formed by subjecting the surface of the silicone protective layer to a plasma treatment while heating. 2. A substrate, an organic coloring layer, a silicone protective layer, a silicone
Do not stack the silicon oxide layer and the transparent conductive layer in this order.
A color filter, the silicon oxide layer and the silicon
There is a boundary layer of 0.02 μm or more between the protective layer and the cone.
A color filter characterized by being present. 3. The silicon oxide layer and the silicone protective layer.
The boundary layer existing between and has a continuously changing composition.
3. The power supply according to claim 2, wherein
Color filter.