JP2915935B2 - Semiconductor thin film material - Google Patents
Semiconductor thin film materialInfo
- Publication number
- JP2915935B2 JP2915935B2 JP25531989A JP25531989A JP2915935B2 JP 2915935 B2 JP2915935 B2 JP 2915935B2 JP 25531989 A JP25531989 A JP 25531989A JP 25531989 A JP25531989 A JP 25531989A JP 2915935 B2 JP2915935 B2 JP 2915935B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- film material
- carrier
- carrier mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 239000000463 material Substances 0.000 title claims description 26
- 239000013078 crystal Substances 0.000 claims description 17
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 12
- 230000037230 mobility Effects 0.000 description 19
- 239000010408 film Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はデバイスに応用される半導体薄膜材料に係
り、特に多結晶薄膜半導体に関するものである。Description: TECHNICAL FIELD The present invention relates to a semiconductor thin film material applied to a device, and more particularly to a polycrystalline thin film semiconductor.
（従来の技術） 従来、多結晶薄膜半導体の電気伝導についてはキャリ
ア移動度測定結果からの研究報告がある。例えば、ｐ型
不純物ドープされた多結晶Si膜のキャリア移動度の温度
依存性について不純物ドーピング濃度との関係が実験的
に調べられた例がある（ジャーナル・オブ・アプライド
フィジックス46巻No.12,5247頁など）。また化合物半導
体では、例えば、ｎ型InP多結晶膜のキャリア移動度に
ついて多結晶平均粒径との関係が調べられた例（ジャー
ナル・オブ・アプライドフィジックス54巻（２）,847
頁）などがある。これらの例から、粒径数百μｍ以下の
多結晶半導体薄膜は、結晶粒界での散乱が大きいためそ
のキャリア移動度の温度依存性は単結晶性薄膜と大きく
異なること、またその温度依存性が単結晶薄膜に比べキ
ャリア濃度を変化させることにより大きく変化すること
などの特徴を有することが知られている。(Prior Art) Conventionally, there has been a research report on the electric conduction of a polycrystalline thin film semiconductor based on the carrier mobility measurement results. For example, there is an example in which the relationship between the temperature dependence of the carrier mobility of a p-type impurity-doped polycrystalline Si film and the impurity doping concentration was experimentally examined (Journal of Applied Physics, Vol. 46, No. 12, 5247 page). In the case of a compound semiconductor, for example, the relationship between the carrier mobility of an n-type InP polycrystalline film and the polycrystalline average grain size was examined (Journal of Applied Physics, Vol. 54 (2), 847).
Page). From these examples, it can be seen that the temperature dependence of the carrier mobility of a polycrystalline semiconductor thin film having a grain size of several hundred μm or less is significantly different from that of a single crystalline thin film because of large scattering at the crystal grain boundaries. Is known to have a characteristic that it changes greatly by changing the carrier concentration as compared with a single crystal thin film.
（発明が解決しようとする課題） しかしながらこれらの多結晶半導体薄膜は、キャリア
移動度の値が103cm2/V・sec以下と非常に低いためデバ
イスへの応用に問題があった。キャリア移動度の値が大
きく、かつその温度特性が優れ、さらにはその温度特性
がキャリア濃度に大きく依存する多結晶半導体薄膜材料
は、電子デバイス、光デバイス、センサー等への応用を
図るために重要である。(Problems to be Solved by the Invention) However, these polycrystalline semiconductor thin films have a very low carrier mobility value of 10 3 cm 2 / V · sec or less, and thus have a problem in application to devices. Polycrystalline semiconductor thin film materials with high carrier mobility and excellent temperature characteristics, and whose temperature characteristics greatly depend on the carrier concentration, are important for application to electronic devices, optical devices, sensors, etc. It is.
（課題を解決するための手段） 本発明者は前記問題点を解決するため鋭意研究を重ね
た結果、本発明の半導体薄膜材料は、平均結晶粒径100
ミクロン以下のInSbからなる多結晶薄膜であって、キャ
リア源となる不純物が前記結晶粒の界面にドーピングさ
れず、前記結晶の粒内に１×1017/cm3以上ドーピングさ
れており、且つ300Kでのキャリア移動度が５×103cm2/V
・sec以上であることを特徴とする。(Means for Solving the Problems) As a result of intensive studies by the present inventors to solve the above problems, the semiconductor thin film material of the present invention has an average crystal grain size of 100%.
A polycrystalline thin film made of InSb of not more than 1 micron, wherein impurities serving as a carrier source are not doped into the interface of the crystal grains, but are doped at least 1 × 10 17 / cm 3 in the grains of the crystal; Carrier mobility at 5 × 10 3 cm 2 / V
-It is characterized by being longer than sec.
さらに、他の発明の半導体薄膜材料は、請求項１記載
の半導体薄膜材料において、400Kから4.2Kの温度範囲で
キャリア移動度の値の変化が±５％以内であることを特
徴とする。Furthermore, a semiconductor thin film material according to another aspect of the present invention is characterized in that, in the semiconductor thin film material according to the first aspect, the change in the value of the carrier mobility within a temperature range of 400 K to 4.2 K is within ± 5%.
さらに、他の発明の半導体薄膜材料は、請求項１また
は２記載の半導体薄膜材料において、前記不純物がSeで
あることを特徴とする。Furthermore, a semiconductor thin film material according to another aspect of the present invention is the semiconductor thin film material according to claim 1 or 2, wherein the impurity is Se.
以下、本発明の半導体材料について詳細に説明する。 Hereinafter, the semiconductor material of the present invention will be described in detail.
本発明の半導体薄膜材料における多結晶薄膜は、一例
としてテクニカル・ダイジェスト・オブ・ジ・エイトス
・センサ・シンポジウム（Technical Digest of the 8t
h Sensor Symposium）1989,頁211〜214に記載の方法で
得ることができる。膜厚は通常10μｍ以下で作製する。The polycrystalline thin film in the semiconductor thin film material of the present invention is, for example, a technical digest of the 8t sensor symposium (Technical Digest of the 8t).
h Sensor Symposium) 1989, pp. 211-214. The thickness is usually 10 μm or less.
本発明における不純物導入に用いる元素及び化合物
は、ｎ型キャリアを生じるものとして、S,Se,Teなど周
期律表第VI族元素、Au,Agなどの遷移金属、H2S,H2Seな
どの化合物をあげることができ、ｐ型キャリアを生じる
ものとしてMg,Zn,Cdなどをあげることができる。不純物
元素の導入はInSb成膜時または成膜後のいずれで行って
もよい。その導入方法は成膜時の蒸着と熱拡散を組み合
わせた方法、成膜後の表面や気相からの熱拡散による方
法、イオン注入とアニール処理を組み合わせた方法等が
ある。ただし、この際導入した不純物元素がInSb結晶粒
界へ集中して局在すると、そのInSb結晶粒界の電気的性
質が著しく変化するため本発明の半導体薄膜材料とはな
らない。不純物種とその導入法は、このInSb結晶粒界の
変化を引き起こさないように選ぶ必要がある。一例とし
て上述の引用例の方法により得られた多結晶薄膜に対
し、InSb成膜後にSeを気相から導入しつつ300〜500℃で
１〜100時間熱拡散した場合にはInSb結晶粒界の著しい
変化を引き起こさない。この場合室温でのキャリア濃度
値が1015cm-3から1018cm-3までの範囲の不純物導入に対
して本発明の半導体材料となる。The elements and compounds used for impurity introduction in the present invention are those that generate n-type carriers, such as S, Se, Te, Group VI elements of the periodic table, transition metals such as Au, Ag, and H 2 S, H 2 Se. And Mg, Zn, Cd, etc., which generate a p-type carrier. The introduction of the impurity element may be performed at the time of the InSb film formation or after the film formation. Examples of the method of introduction include a method of combining vapor deposition and thermal diffusion during film formation, a method of thermal diffusion from the surface or gas phase after film formation, and a method of combining ion implantation and annealing. However, when the impurity element introduced at this time is concentrated and localized at the InSb crystal grain boundary, the electrical properties of the InSb crystal grain boundary are significantly changed, so that the semiconductor thin film material of the present invention is not obtained. It is necessary to select an impurity species and a method for introducing the same so as not to cause the change of the InSb crystal grain boundary. As an example, for the polycrystalline thin film obtained by the method of the above-mentioned reference example, when InSb is thermally diffused at 300 to 500 ° C. for 1 to 100 hours while introducing Se from the gas phase after the formation of InSb, the InSb crystal grain boundary is formed. Does not cause significant changes. In this case, the semiconductor material of the present invention can be obtained by introducing impurities having a carrier concentration at room temperature in the range of 10 15 cm −3 to 10 18 cm −3 .
このようにして作製される本発明の半導体薄膜材料
は、前述のようなキャリア移動度の特性をもつ材料であ
るが、この特性は従来知られていない特性である。本発
明の半導体薄膜材料ではμ（300K）は５×103cm2/V・se
c以上であるが、高くとも５×104cm2/V・secである。ま
た平均結晶粒径が100μｍ以上の場合には、薄膜の電気
伝導特性はInSb結晶粒界による散乱の寄与が小さくなる
ことから単結晶薄膜の電気伝導特性に近づき、本半導体
薄膜材料のような特性は示さない。The semiconductor thin film material of the present invention produced in this way is a material having the above-described carrier mobility characteristics, but these characteristics are conventionally unknown characteristics. In the semiconductor thin film material of the present invention, μ (300 K) is 5 × 10 3 cm 2 / V · se
c or more, but at most 5 × 10 4 cm 2 / V · sec. When the average crystal grain size is 100 μm or more, the electric conduction characteristics of the thin film approach the electric conduction characteristics of the single crystal thin film because the contribution of scattering by the InSb crystal grain boundaries becomes small, and the characteristics like the semiconductor thin film material are obtained. Is not shown.
本発明におけるキャリア移動度の値は、通常のホール
効果測定から得られるホール移動度の値で表わしてい
る。しかしながらこの量は、実用上重要となる各種キャ
リア移動度との間に十分強い相関関係にあることは半導
体物理学上広く知られている。The value of the carrier mobility in the present invention is represented by a value of the hole mobility obtained from a usual Hall effect measurement. However, it is widely known in semiconductor physics that this amount has a sufficiently strong correlation with various carrier mobilities that are important in practical use.
（実施例） 以下、実施により本発明をさらに詳しく説明する。(Examples) Hereinafter, the present invention will be described in more detail by practice.
マイカ基板（へき開面）上へ真空蒸着によりInSbから
なる多結晶半導体薄膜を作製した。A polycrystalline semiconductor thin film made of InSb was prepared on a mica substrate (cleaved surface) by vacuum evaporation.
基板温度は470℃〜510℃の範囲であり、蒸着源にはIn
Sb単結晶を用いた。また蒸着前の真空排気は10-6Torr以
下まで行った。90分間の成膜で膜厚7200Å、結晶粒径１
〜10μｍのInSbからなる多結晶薄膜を得た。この試料は
1.45×1016cm-3の室温キャリア濃度をもっていた。The substrate temperature is in the range of 470 ° C to 510 ° C.
Sb single crystal was used. Evacuation before vapor deposition was performed to 10 -6 Torr or less. 90 minutes film thickness 7200mm, grain size 1
A polycrystalline thin film made of InSb of 1010 μm was obtained. This sample
It had a room temperature carrier concentration of 1.45 × 10 16 cm −3 .
次いでこの試料（1cm角）を直径2cm、長さ10cmのガラ
ス管にSeとともに入れ、10-4Torr以下の真空まで管内を
真空排気した。次いでガラス管を封じ、管状炉で460
℃、10時間加熱した。この方法によりSeを不純物として
InSb結晶粒内に導入した。Seの導入による室温キャリア
濃度の増加は、ガラス管中へ仕込むSeの量とともに増加
した。0.18mgのSe粒を仕込んだ時のサンプルは、1.2×1
018cm-3の室温キャリアをもっていた。0.030mgのSe粒で
は1.5×1017cm-3、また0.008mgのSe粒では2.2×1016cm
-3の室温キャリア濃度をもっていた。Next, this sample (1 cm square) was placed together with Se in a glass tube having a diameter of 2 cm and a length of 10 cm, and the inside of the tube was evacuated to a vacuum of 10 -4 Torr or less. The glass tube was then sealed and 460 in a tube furnace.
Heated at ° C for 10 hours. This method makes Se an impurity
It was introduced into InSb crystal grains. The increase in room temperature carrier concentration due to the introduction of Se increased with the amount of Se charged into the glass tube. The sample when 0.18 mg of Se grains was charged was 1.2 × 1
It had a room temperature carrier of 0 18 cm -3 . 1.5 × 10 17 cm −3 for 0.030 mg Se grains, and 2.2 × 10 16 cm for 0.008 mg Se grains
It had a room temperature carrier concentration of -3 .
これらの試料の電子のホール移動度の温度依存性を第
１図に示す。またこの試料をSEMとEDXで観察したとこ
ろ、InSb結晶粒界へのSeの偏析は認められなかった。FIG. 1 shows the temperature dependence of the electron hole mobility of these samples. When this sample was observed by SEM and EDX, segregation of Se at the InSb crystal grain boundary was not recognized.
第１図から明らかごとく、室温キャリア濃度が1016cm
-3オーダーから1017cm-3オーダーまで変化する間に、μ
（300K）／μ（77K）の値が300から1.1まで変化してい
る。すなわちキャリア濃度の変化に伴うμの温度依存性
の変化がかなり大きくなっている。また、300Kでのμ値
はいずれも22000,16400,12800cm2/V・secと高い値を示
している。As is clear from FIG. 1, the carrier concentration at room temperature was 10 16 cm.
While changing from -3 order to 10 17 cm -3 order, μ
The value of (300K) / μ (77K) changes from 300 to 1.1. That is, the change in the temperature dependence of μ with the change in the carrier concentration is considerably large. Further, the μ value at 300 K shows a high value of 22000, 16400, and 12800 cm 2 / V · sec.
次に室温キャリア濃度1.5×1017cm-3乃至1.2×1018cm
-3の試験量では、400Kから4.2Kまでの広い温度範囲でμ
の値の変化が、それぞれ12200cm2/V・sec±５％,7640cm
2/V・sec±５％と小さい。Next, room temperature carrier concentration 1.5 × 10 17 cm -3 to 1.2 × 10 18 cm
For a test volume of -3 , μ over a wide temperature range from 400K to 4.2K
Changes of 12200cm 2 / V · sec ± 5%, 7640cm
2 / V · sec ± 5%
（発明の効果） 本発明の半導体薄膜材料では、上述のようなキャリア
濃度とキャリア移動度と温度との間には特異な相関があ
る。ある特定温度化ではキャリア濃度を変えることによ
りキャリア移動度に大きな変化が期待でき、このことを
利用した増幅器や発振器などのデバイス応用が考えられ
る。この場合特に、キャリア移動度の絶対値の大きいこ
とが実用上非常に重要となる。(Effect of the Invention) In the semiconductor thin film material of the present invention, there is a specific correlation between the carrier concentration, the carrier mobility, and the temperature as described above. At a certain specific temperature, a large change in carrier mobility can be expected by changing the carrier concentration, and device applications such as amplifiers and oscillators utilizing this can be considered. In this case, in particular, a large absolute value of the carrier mobility is very important in practical use.
また特にキャリア移動度が温度依存性を示さないよう
なキャリア濃度範囲に不純物導入した本発明の半導体薄
膜材料は、400Kから4.2Kまでの広い温度範囲で安定に移
動する素子への応用が可能となる。この際、該材料のキ
ャリア移動度の絶対値が大きいため実用上非常に有用で
ある。In addition, the semiconductor thin film material of the present invention, in which impurities are introduced in a carrier concentration range in which the carrier mobility does not exhibit temperature dependence, can be applied to an element that moves stably in a wide temperature range from 400 K to 4.2 K. Become. In this case, the material has a large absolute value of carrier mobility, which is very useful in practice.
更にまた、77K近傍以下で高キャリア濃度、高キャリ
ア移動度を有する性質は超伝導トランジスタなどの低温
素子への応用が十分可能である。Furthermore, the property of having a high carrier concentration and a high carrier mobility at around 77K or less can be sufficiently applied to low-temperature devices such as superconducting transistors.
本発明の半導体薄膜材料は以上のように種々幅広い素
子応用が可能な材料である。The semiconductor thin film material of the present invention is a material that can be applied to a wide variety of devices as described above.
第１図は、本発明による半導体薄膜材料の実施例におけ
る電子移動度−温度特性を示す図である。図中、左側に
記載した数値は、それぞれのサンプルの室温でのキャリ
ア濃度値を表し、右側の数値は、77Kでのキャリア濃度
値を表す。FIG. 1 is a diagram showing electron mobility-temperature characteristics in an embodiment of a semiconductor thin film material according to the present invention. In the figure, the numerical values described on the left side represent the carrier concentration value of each sample at room temperature, and the numerical values on the right side represent the carrier concentration value at 77K.
フロントページの続き (56)参考文献 特開 昭53−117961（ＪＰ，Ａ) 特公 昭50−4540（ＪＰ，Ｂ１) Ｊ．ＧＯＣ ｅｔ ａｌ．，”Ｄｏｐ ｉｎｇ ｏｆ ＩｎＳｂ ｔｈｉｎ ｆ ｉｌｍｓ ｗｉｔｈ ｅｌｅｍｅｎｔｓ ｏｆ ｇｒｏｕｐｓ ▲ＩＩ▼ ａｎ ｄ ▲ＶＩ▼，”Ｔｈｉｎ Ｓｏｌｉｄ Ｆｉｌｍｓ，Ｖｏｌ．142，1986，ｐ ｐ．227−240 (58)調査した分野(Int.Cl.6，ＤＢ名) C01G 1/00 - 57/00 H01L 21/22 ＣＡ（ＳＴＮ) ＲＥＧＩＳＴＲＹ（ＳＴＮ)Continuation of front page (56) References JP-A-53-117961 (JP, A) JP-B-50-4540 (JP, B1) GOC et al. , "Dopping of InS thin films with elements of groups II and AND VI," Thin Solid Films, Vol. 142, 1986, p. 227-240 (58) Fields investigated (Int. Cl. 6 , DB name) C01G 1/00-57/00 H01L 21/22 CA (STN) REGISTRY (STN)
Claims (3)
なる多結晶薄膜であって、キャリア源となる不純物が前
記結晶粒の界面にドーピングされず、前記結晶の粒内に
１×1017/cm3以上ドーピングされており、且つ300Kでの
キャリア移動度が５×103cm2/V・sec以上であることを
特徴とする半導体薄膜材料。1. A polycrystalline thin film made of InSb having an average crystal grain size of 100 μm or less, wherein an impurity serving as a carrier source is not doped at an interface between the crystal grains, and 1 × 10 17 / A semiconductor thin film material which is doped with at least 3 cm 3 and has a carrier mobility at 300 K of at least 5 × 10 3 cm 2 / V · sec.
400Kから4.2Kの温度範囲でキャリア移動度の値の変化が
±５％以内であることを特徴とする半導体薄膜材料。2. The semiconductor thin film material according to claim 1, wherein
A semiconductor thin film material characterized in that the change in the value of carrier mobility is within ± 5% in a temperature range of 400K to 4.2K.
おいて、前記不純物がSeであることを特徴とする半導体
薄膜材料。3. The semiconductor thin film material according to claim 1, wherein said impurity is Se.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25531989A JP2915935B2 (en) | 1989-10-02 | 1989-10-02 | Semiconductor thin film material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25531989A JP2915935B2 (en) | 1989-10-02 | 1989-10-02 | Semiconductor thin film material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03122019A JPH03122019A (en) | 1991-05-24 |
| JP2915935B2 true JP2915935B2 (en) | 1999-07-05 |
Family
ID=17277133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25531989A Expired - Lifetime JP2915935B2 (en) | 1989-10-02 | 1989-10-02 | Semiconductor thin film material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2915935B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9162866B2 (en) | 2010-06-24 | 2015-10-20 | Graco Minnesota Inc. | Dual pump fluid proportioner with adjustable motor position |
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1989
- 1989-10-02 JP JP25531989A patent/JP2915935B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| Ｊ．ＧＯＣ ｅｔ ａｌ．，"Ｄｏｐｉｎｇ ｏｆ ＩｎＳｂ ｔｈｉｎ ｆｉｌｍｓ ｗｉｔｈ ｅｌｅｍｅｎｔｓ ｏｆ ｇｒｏｕｐｓ ▲ＩＩ▼ ａｎｄ ▲ＶＩ▼，"Ｔｈｉｎ Ｓｏｌｉｄ Ｆｉｌｍｓ，Ｖｏｌ．１４２，１９８６，ｐｐ．２２７−２４０ |
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| Publication number | Publication date |
|---|---|
| JPH03122019A (en) | 1991-05-24 |
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