JP2919031B2 - Magnetostatic wave S / N enhancer - Google Patents
Magnetostatic wave S / N enhancerInfo
- Publication number
- JP2919031B2 JP2919031B2 JP24274190A JP24274190A JP2919031B2 JP 2919031 B2 JP2919031 B2 JP 2919031B2 JP 24274190 A JP24274190 A JP 24274190A JP 24274190 A JP24274190 A JP 24274190A JP 2919031 B2 JP2919031 B2 JP 2919031B2
- Authority
- JP
- Japan
- Prior art keywords
- level
- magnetostatic wave
- input
- enhancer
- wave filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Noise Elimination (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) この発明は静磁波デバイスを用いたS/Nエンハンサに
係り、特に静磁波フィルタが周波数選択的に非線形な振
幅制限特性を有することを利用し、マイクロ波伝搬のS/
Nを改善した静磁波S/Nエンハンサに関するものである。Description: BACKGROUND OF THE INVENTION (Industrial application field) The present invention relates to an S / N enhancer using a magnetostatic wave device, and in particular, utilizes the fact that a magnetostatic wave filter has a frequency-selective nonlinear amplitude limiting characteristic. , Microwave propagation S /
The present invention relates to a magnetostatic wave S / N enhancer with improved N.
(発明の概要) この発明は、マイクロ波の希望波と妨害波(雑音)の
比(S/N)を改善する静磁波デバイスを用いたS/Nエンハ
ンサに関するもので、双対な2個の静磁波フィルタを互
いに異なった入力レベルで動作させ、静磁波フィルタの
周波数選択的な振幅制限効果を利用し、出力側で2つの
出力レベルを互いに調整した後逆位相で合成するという
方法を用いて、レベルの高い希望波信号成分とレベルの
低い妨害波(雑音)成分の比を改善することができるよ
うにしたもので、従来型のS/Nエンハンサに比し特性の
優れたS/Nエンハンサが得られるようになった。(Summary of the Invention) The present invention relates to an S / N enhancer using a magnetostatic wave device for improving a ratio (S / N) of a desired wave of microwaves and a disturbing wave (noise). By operating the magnetic wave filters at different input levels, utilizing the frequency-selective amplitude limiting effect of the magnetostatic wave filter, adjusting the two output levels at the output side and then synthesizing them in opposite phases, It is designed to improve the ratio between the high-level desired wave signal component and the low-level interfering wave (noise) component. Can now be obtained.
(従来の技術) 従来、この種S/Nエンハンサは電磁波を静磁波に変換
するために、マイクロストリップ線路あるいはスロット
線路上に、GGG(ガドリニウム・ガリウム・ガーネッ
ト)上に形成されたYIG(イットリウム・鉄・ガーネッ
ト)薄膜を向かい合わせて置くといった構造によって実
現されていた。(参考文献(1),(2)) 第2図にこの種従来型のS/Nエンハンサの代表的構造
例を示す。(Prior art) Conventionally, this type of S / N enhancer converts YIG (yttrium / gallium / garnet / garnet) formed on GGG (gadolinium gallium garnet) on a microstrip line or slot line to convert electromagnetic waves into magnetostatic waves. This was realized by a structure in which thin films were placed face to face. (References (1), (2)) FIG. 2 shows a typical structure example of this type of conventional S / N enhancer.
入力端子11から入力されたマイクロストリップ線路13
上を伝搬する電磁波は、そのレベルに応じて静磁波に変
換され、静磁波はYIG薄膜14中を伝搬し吸収体18によっ
て吸収される。そのため、出力端子12での電磁波のエネ
ルギは静磁波に変換された分だけ減衰する。しかし第3
図に示すように、電磁波のレベルがある閾値レベル(第
3図示Pth)を越える場合には静磁波に変換される量が
飽和し、静磁波フィルタの入出力特性が非線形な振幅制
限を受けるため、電磁波のエネルギはあまり減衰せず入
力エネルギはほぼそのまま出力端子12に現われる。すな
わちこの飽和現象により挿入損失は高いレベルの電磁波
に対しては小さく、逆に低いレベルの電磁波に対しては
大きくなる。Microstrip line 13 input from input terminal 11
The electromagnetic wave propagating above is converted into a magnetostatic wave according to its level, and the magnetostatic wave propagates through the YIG thin film 14 and is absorbed by the absorber 18. Therefore, the energy of the electromagnetic wave at the output terminal 12 is attenuated by the amount converted to the magnetostatic wave. But the third
As shown, the amount to be converted into the magnetostatic wave is saturated when exceeding the threshold level where there is an electromagnetic wave level of the (third illustrated P th), input-output characteristics of the magnetostatic wave filter is subjected to nonlinear amplitude limiting Therefore, the energy of the electromagnetic wave does not attenuate much, and the input energy appears at the output terminal 12 almost as it is. That is, due to this saturation phenomenon, the insertion loss is small for a high-level electromagnetic wave and conversely large for a low-level electromagnetic wave.
また、静磁波の飽和現象は周波数選択的であるため、
これらの性質を利用することによって複数の信号が同時
に入力された場合でも、それぞれの信号レベルに応じて
挿入損失が決定されるのでS/Nエンハンサとして機能す
ることができる。In addition, since the magnetostatic wave saturation phenomenon is frequency-selective,
By utilizing these properties, even when a plurality of signals are input at the same time, the insertion loss is determined according to each signal level, so that it can function as an S / N enhancer.
参考文献 (1)例えばJ.D.Adam“Broadband Microwave Signal−
to−Noise Enhancer(広帯域マイクロ波S/Nエンハン
サ)”、IEEE Trans.Vol.MAG−16,No.5,pp.1168−1170
(1980)。References (1) For example, JDAdam “Broadband Microwave Signal-
to-Noise Enhancer (Broadband microwave S / N enhancer), IEEE Trans. Vol. MAG-16, No. 5, pp. 1168-1170
(1980).
(2)J.D.Adam“A Slot−Line静磁波Signal−to−Nois
e Enhancer(スロットライン静磁波S/Nエンハンサ”、I
EEE Trans.Vol.MAG−21,No.5,pp.1794−1796(1985)。(2) JDAdam "A Slot-Line Magnetostatic Wave Signal-to-Nois
e Enhancer (slot line magnetostatic wave S / N enhancer), I
EEE Trans. Vol. MAG-21, No. 5, pp. 1794-1796 (1985).
(発明が解決しようとする課題) しかし、第5図にその入出力特性を示す従来型のS/N
エンハンサでは、S/Nの改善が始まる最小入力信号レベ
ル(PL)は−6dBm、また最大の改善量すなわち改善度が
飽和するのに必要な入力レベル(PH)は+15dBmである
ため、その間入出力特性がゆるやかに変化していた。そ
の結果、特にS/Nの悪い信号に対しては十分な改善効果
が得られないという欠点があった。(Problems to be solved by the invention) However, FIG. 5 shows a conventional S / N showing its input / output characteristics.
In the enhancer, the minimum input signal level (P L ) at which the S / N improvement starts is -6 dBm, and the maximum improvement level, that is, the input level (P H ) required to saturate the improvement level is +15 dBm. The input / output characteristics were slowly changing. As a result, there is a defect that a sufficient improvement effect cannot be obtained especially for a signal having a poor S / N.
第5図の横軸は入力レベルをdBm単位で表示したも
の、縦軸は相対的な出力レベル(dB)で、直線の入出力
特性24は例えば第2図示マイクロストリップ線路上に静
磁波変換機能を持たせない時のこのデバイスの入出力特
性、曲線入出力特性25は静磁波変換機能を持たせた時の
このデバイスの入出力特性を示すものである。The horizontal axis in FIG. 5 shows the input level in dBm, and the vertical axis shows the relative output level (dB). The linear input / output characteristic 24 is, for example, a magnetostatic wave conversion function on the microstrip line shown in FIG. The input / output characteristics of this device when the device is not provided, and the curve input / output characteristics 25 show the input / output characteristics of the device when the device is provided with a magnetostatic wave conversion function.
そこで本発明の目的は、前述の従来例の欠点に鑑み、
特にレベルPHのレベルを著しく低下させ、レベルPLとレ
ベルPHのレベル差を小さくすることにより、急峻に変化
する入出力特性を実現させ、S/Nの悪い入力信号に対し
てもそのS/Nを十分改善することのできる静磁波S/Nエン
ハンサを提供せんとするものである。Therefore, an object of the present invention is to solve the above-described drawbacks of the conventional example,
In particular level P H level significantly reduce the, by reducing the level difference between the level P L and level P H, is realized rapidly changing input and output characteristics, its also for S / N bad input signal It is an object of the present invention to provide a magnetostatic wave S / N enhancer capable of sufficiently improving the S / N.
(課題を解決するための手段) この目的を達成するため、本発明に係る静磁波S/Nエ
ンハンサは、低レベルの高周波入力信号に対しては振幅
制限を受けない線形入出力特性を示し、高レベルの高周
波入力信号に対しては振幅制限を受ける飽和入出力特性
を示す、周波数選択的かつ非線形な入出力特性を有する
静磁波フィルタを用いた静磁波S/Nエンハンサにおい
て、当該エンハンサが:高周波入力信号を前記高レベル
の高周波入力信号と前記低レベルの高周波入力信号とに
分配する分配手段と;前記高レベルの高周波入力信号を
入力とする第1の静磁波フィルタと;前記低レベルの高
周波入力信号を入力とし、第1の静磁波フィルタとほぼ
同一の入出力特性を有する第2の静磁波フィルタと;第
1の静磁波フィルタの雑音成分出力と第2の静磁波フィ
ルタの雑音成分出力とが等振幅かつ逆位相となって打ち
消し合うように第1の静磁波フィルタおよび第2の静磁
波フィルタの高周波出力を合成する合成手段とを具備す
ることを特徴とするものである。(Means for Solving the Problems) In order to achieve this object, the magnetostatic wave S / N enhancer according to the present invention exhibits a linear input / output characteristic that is not subject to amplitude limitation for a low-level high-frequency input signal, A magnetostatic wave S / N enhancer using a magnetostatic wave filter having a frequency-selective and non-linear input / output characteristic exhibiting a saturation input / output characteristic subjected to an amplitude limitation for a high-level high-frequency input signal, the enhancer includes: Distribution means for distributing a high-frequency input signal into the high-level high-frequency input signal and the low-level high-frequency input signal; a first magnetostatic wave filter that receives the high-level high-frequency input signal as input; A second magnetostatic wave filter having a high-frequency input signal as input and having substantially the same input / output characteristics as the first magnetostatic wave filter; a noise component output of the first magnetostatic wave filter and a second magnetostatic wave A synthesizing means for synthesizing the high-frequency outputs of the first magnetostatic wave filter and the second magnetostatic wave filter such that the noise component output of the filter has the same amplitude and opposite phase and cancel each other. It is.
(実施例) 本発明の要点は、同一の特性を有する双対の2個の静
磁波フィルタを用い、一方のフィルタは振幅制限を受け
るようなレベルに設定し、他方のフィルタは振幅制限を
受けない(入出力特性が線形の範囲)レベルに設定し、
レベルの低い雑音などの信号に対して、2つの共に線形
動作を行うレベル以下のフィルタ出力を等振幅、逆相合
成して、レベルの低い雑音などの信号成分を消去するよ
うにした所にある。(Embodiment) The gist of the present invention is that two dual magnetostatic wave filters having the same characteristics are used, and one filter is set at a level such that the amplitude is restricted, and the other filter is not subjected to the amplitude restriction. (Input / output characteristics are linear range) level,
For two low-level signals such as noise, the two filter outputs below the level that perform linear operation are subjected to equal-amplitude and opposite-phase synthesis to eliminate signal components such as low-level noise. .
以下添付図面を参照し実施例により本発明を詳細に説
明する。Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
第1図は本発明に係る双対な2個の静磁波フィルムを
用いたS/Nエンハンサ実施例の構成ブロック線図を示
す。ここで双対とは、2個の静磁波フィルタが例えば同
一基板上に作成され、外乱に対して同一の物性変化をす
るものを言い、さらに静磁波フィルタは、マイクロ波を
例えば第3図示の入出力特性に従って一旦静磁波に変換
し、続いて線形の関係で再びマイクロ波に変換するフィ
ルタである。FIG. 1 is a structural block diagram of an embodiment of an S / N enhancer using two magnetostatic wave films according to the present invention. Here, the dual refers to a filter in which two magnetostatic wave filters are formed on, for example, the same substrate and undergoes the same change in physical properties with respect to disturbance. This is a filter that once converts into a magnetostatic wave according to the output characteristics, and then converts again into a microwave in a linear relationship.
入力端子1から入力されたマイクロ波信号は、方向性
結合器5、あるいは電力分配器と減衰器とを組合わせた
ものによって異なった電力比に分配され、高いレベルの
信号は静磁波フィルタ3、低いレベルの信号は静磁波フ
ィルタに入力される。この場合フィルタ4の入力レベル
は、入出力特性が常に線形となるレベル範囲内、すなわ
ち第3図示静磁波フィルタの入出力特性で入力レベルP
th以下のレベルに設定される。The microwave signal input from the input terminal 1 is distributed to different power ratios by the directional coupler 5 or the combination of the power distributor and the attenuator. The low level signal is input to the magnetostatic wave filter. In this case, the input level of the filter 4 is within the level range where the input / output characteristics are always linear, that is, the input level P in the input / output characteristics of the magnetostatic wave filter shown in FIG.
It is set to the level below th .
さらに2つのフィルタ3,4が線形動作をする範囲内の
低レベル入力信号に対しては、両フィルタを通過した出
力信号が方向性結合器6で等振幅、逆位相で合成される
よう、減衰器7や遅延線8(位相器でも可)が本発明静
磁波S/Nエンハンサの構成では調整されているので、こ
のような場合には方向性結合器6内で消去され、エンハ
ンサへの低レベルの入力信号はエンハンサの出力端子2
で極めて小さなレベルの信号しか現わさない。Further, for a low-level input signal within a range in which the two filters 3 and 4 perform linear operation, the output signal passing through both filters is attenuated by the directional coupler 6 so as to be synthesized with equal amplitude and opposite phase. In the case of the magnetostatic wave S / N enhancer of the present invention, since the delay device 7 and the delay line 8 (or a phase shifter are also possible) are adjusted, in such a case, they are eliminated in the directional coupler 6 and the low level to the enhancer is reduced. The input signal of the level is output terminal 2 of the enhancer.
Only a very low level signal appears.
しかしエンハンサへの高レベルの入力信号、第3図示
入出力特性でレベルPth以上の入力信号はフィルタ3の
飽和特性によって出力信号の振幅は制限され、方向性結
合器6では等振幅、逆位相の合成とはならず、フィルタ
4を通過した信号がほぼそのまま出力端子2に現われ
る。すなわち、入力信号のレベルが低いほど大きな挿入
損失を示し、レベルが高いほど小さな挿入損失を示すと
いうS/Nエンハンサとしての機能を本発明に係る実施例
は有することになる。However, the high-level input signal to the enhancer, the input signal having the level Pth or more in the third illustrated input / output characteristic, the amplitude of the output signal is limited by the saturation characteristic of the filter 3, and the directional coupler 6 has equal amplitude and opposite phase. And the signal passed through the filter 4 appears at the output terminal 2 almost as it is. That is, the embodiment according to the present invention has a function as an S / N enhancer in which the lower the level of the input signal, the larger the insertion loss, and the higher the level, the smaller the insertion loss.
第4図に、方向性結合器6の結合度を−30dBとして得
られた本発明によるS/Nエンハンサ入出力特性の測定例
を示す。第4図示直線入出力特性22と曲線入出力特性23
は第5図示のそれらと同一の関係にある。FIG. 4 shows a measurement example of the input / output characteristics of the S / N enhancer according to the present invention obtained by setting the degree of coupling of the directional coupler 6 to -30 dB. 4th linear input / output characteristic 22 and curve input / output characteristic 23
Have the same relationship as those shown in FIG.
さて第4図と第5図の両特性を比較すると、従来形の
S/Nエンハンサでは、第5図に示すようにレベルPL(−6
dBm)とレベルPH(+15dBm)とのレベル差(21dB)が大
きいため、この間が緩やかな入出力特性変化となってい
るのに対し、本発明によるS/NエンハンサではレベルPL
(−20dBm)とレベルPH(−14dBm)とのレベル差(6d
B)が小さいため、この出が極めて急峻な入出力特性変
化となっている。Now, comparing the characteristics of FIG. 4 and FIG.
In the S / N enhancer, the level P L (−6
dBm) and the level P H (+15 dBm) because the level difference (21 dB) is large, the input / output characteristics change slowly during this period, whereas the level P L in the S / N enhancer according to the present invention.
(-20 dBm) and the level P level difference between H (-14dBm) (6d
Since B) is small, this output is an extremely steep change in input / output characteristics.
このことは、例えば希望波と妨害波(雑音)の比が2
〜3dBの場合、従来形のものでは5dB程度の改善が限界で
あるが、本発明に係るものでは15dB以上の改善が可能と
なり、原理的にはまだまだ改善の余地がある。またレベ
ルPLとレベルPHの絶対レベル値を比較してみても本発明
に係るものでは、レベルPLで15dB程度、レベルPHで30dB
程度のレベルの低下が認められ、従来形のものより動作
入力信号レベルを15dB以上低減することができるという
利点も有している。This means, for example, that the ratio between the desired signal and the interference signal (noise) is 2
In the case of 33 dB, the improvement of about 5 dB is the limit in the conventional type, but the improvement according to the present invention can be improved by 15 dB or more, and there is still room for improvement in principle. Also relate to the present invention we compare the absolute level value of the level P L and level P H, 15 dB approximately at the level P L, 30 dB at the level P H
This has the advantage that the operating input signal level can be reduced by 15 dB or more compared with the conventional type.
以上本発明に係る実施例のほんの一部について説明し
てきたが、本発明はこれに限定されることなく請求項に
記載の範囲内において各種の変形、変更の可能なことは
当業者に自明であろう。Although only a part of the embodiment according to the present invention has been described above, it is obvious to those skilled in the art that the present invention is not limited to this and various modifications and changes are possible within the scope of the claims. There will be.
(発明の効果) 以上詳細に説明してきたように、本発明静磁波S/Nエ
ンハンサによれば、S/Nの改善度が従来例に比し大幅に
上昇し、動作入力信号レベルもかなり低減することがで
きるという利点が生じる。(Effects of the Invention) As described above in detail, according to the magnetostatic wave S / N enhancer of the present invention, the degree of improvement in S / N is greatly increased as compared with the conventional example, and the operation input signal level is also considerably reduced. This has the advantage of being able to
さらにまた本発明エンハンサは、双対な静磁波フィル
タによって構成されるため、YIGそのものの特性変化や
外部直流磁界の変化が生じても、本回路全体として特性
に与える影響は極めて少ないという利点も有している。Furthermore, since the enhancer of the present invention is constituted by a dual magnetostatic wave filter, even if a change in the characteristics of the YIG itself or a change in the external DC magnetic field occurs, it has the advantage that the effect on the characteristics of the entire circuit is extremely small. ing.
第1図は、本発明に係る双対な2個の静磁波フィルタを
用いたS/Nエンハンサ実施例の構成を示し、 第2図は従来形S/Nエンハンサの代表的構造例を示し、 第3図は静磁波フィルタの入出力特性を示し、 第4図、第5図はそれぞれ本発明および従来形S/Nエン
ハンサの入出力特性を示す。 1……入力端子、2……出力端子 3,4……静磁波フィルタ、5,6……方向性結合器 7……減衰器、8……遅延線 11……入力端子、12……出力端子 13……マイクロストリップ線路 14……YIG薄膜、15……GGG基板 16……導体板、17……誘電体基板 18……静磁波吸収体FIG. 1 shows a configuration of an embodiment of an S / N enhancer using dual magnetostatic wave filters according to the present invention. FIG. 2 shows a typical example of a conventional S / N enhancer. FIG. 3 shows the input / output characteristics of the magnetostatic wave filter, and FIGS. 4 and 5 show the input / output characteristics of the present invention and the conventional S / N enhancer, respectively. 1 ... input terminal, 2 ... output terminal 3,4 ... magnetostatic wave filter, 5,6 ... directional coupler 7 ... attenuator, 8 ... delay line 11 ... input terminal, 12 ... output Terminal 13: Microstrip line 14: YIG thin film, 15: GGG substrate 16: Conductor plate, 17: Dielectric substrate 18: Magnetostatic wave absorber
フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01P 1/23 H01P 1/215 H01P 9/00 H04B 1/10 JOIS WPI/LContinuation of the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01P 1/23 H01P 1/215 H01P 9/00 H04B 1/10 JOIS WPI / L
Claims (1)
制限を受けない線形入出力特性を示し、高レベルの高周
波入力信号に対しては振幅制限を受ける飽和入出力特性
を示す、周波数選択的かつ非線形な入出力特性を有する
静磁波フィルタを用いた静磁波S/Nエンハンサにおい
て、当該エンハンサが: 高周波入力信号を前記高レベルの高周波入力信号と前記
低レベルの高周波入力信号とに分配する分配手段と;前
記高レベルの高周波入力信号を入力する第1の静磁波フ
ィルタと;前記低レベルの高周波入力信号を入力とし、
第1の静磁波フィルタとほぼ同一の入出力特性を有する
第2の静磁波フィルタと;第1の静磁波フィルタの雑音
成分出力と第2の静磁波フィルタの雑音成分出力とが等
振幅かつ逆位相となって打ち消し合うように第1の静磁
波フィルタおよび第2の静磁波フィルタの高周波出力を
合成する合成手段とを具備することを特徴とする静磁波
S/Nエンハンサ。1. A frequency selection circuit which exhibits a linear input / output characteristic which is not subjected to amplitude limitation for a low-level high-frequency input signal and a saturated input / output characteristic which is subjected to amplitude limitation for a high-level high-frequency input signal A magnetostatic wave S / N enhancer using a magnetostatic wave filter having a characteristic and non-linear input / output characteristic, the enhancer distributes a high-frequency input signal to the high-level high-frequency input signal and the low-level high-frequency input signal. A first magnetostatic wave filter for inputting the high-level high-frequency input signal; and an input for receiving the low-level high-frequency input signal;
A second magnetostatic wave filter having substantially the same input / output characteristics as the first magnetostatic wave filter; and a noise component output of the first magnetostatic wave filter and a noise component output of the second magnetostatic wave filter having the same amplitude and opposite. Synthesizing means for synthesizing the high-frequency outputs of the first magnetostatic wave filter and the second magnetostatic wave filter so as to cancel each other out of phase.
S / N enhancer.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24274190A JP2919031B2 (en) | 1990-09-14 | 1990-09-14 | Magnetostatic wave S / N enhancer |
| DE69116629T DE69116629T2 (en) | 1990-09-14 | 1991-09-12 | Device for increasing the signal-to-noise ratio of magnetostatic waves and FM or PM receiving device using this device |
| EP91115478A EP0475408B1 (en) | 1990-09-14 | 1991-09-12 | Magnetostatic wave s/n enhancer and receiving apparatus of fm or pm signal using the same |
| KR1019910015987A KR100191906B1 (en) | 1990-09-14 | 1991-09-13 | Sine wave signal / noise (S / N) enhancer and receiving device for FM and PM signal using it |
| US07/760,070 US5307516A (en) | 1990-09-14 | 1991-09-13 | Magnetostatic wave S/N enhancer and receiving apparatus of FM or PM signal using the same |
| CN91109580.2A CN1027850C (en) | 1990-09-14 | 1991-09-14 | Maguetostatic wave S/N enhancer and receiving apparatus of FM or PM signal using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24274190A JP2919031B2 (en) | 1990-09-14 | 1990-09-14 | Magnetostatic wave S / N enhancer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04123502A JPH04123502A (en) | 1992-04-23 |
| JP2919031B2 true JP2919031B2 (en) | 1999-07-12 |
Family
ID=17093568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24274190A Expired - Lifetime JP2919031B2 (en) | 1990-09-14 | 1990-09-14 | Magnetostatic wave S / N enhancer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2919031B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100440252B1 (en) * | 2002-05-15 | 2004-07-15 | 한국전자통신연구원 | S/N Enhancer |
-
1990
- 1990-09-14 JP JP24274190A patent/JP2919031B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04123502A (en) | 1992-04-23 |
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