JP2922020B2 - Semiconductor device test method and semiconductor device test apparatus - Google Patents
Semiconductor device test method and semiconductor device test apparatusInfo
- Publication number
- JP2922020B2 JP2922020B2 JP3164331A JP16433191A JP2922020B2 JP 2922020 B2 JP2922020 B2 JP 2922020B2 JP 3164331 A JP3164331 A JP 3164331A JP 16433191 A JP16433191 A JP 16433191A JP 2922020 B2 JP2922020 B2 JP 2922020B2
- Authority
- JP
- Japan
- Prior art keywords
- impedance
- semiconductor device
- test
- signal transmission
- series
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012360 testing method Methods 0.000 title claims description 72
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000010998 test method Methods 0.000 title claims description 12
- 230000008054 signal transmission Effects 0.000 claims description 24
- 230000005540 biological transmission Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、高集積で多機能化した
半導体デバイスの試験に有効な、リレー回路を削減し実
装密度を高めた半導体デバイスの試験方法および半導体
デバイス試験装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device test method and a semiconductor device test apparatus which are effective for testing highly integrated and multifunctional semiconductor devices and which have reduced relay circuits and increased packaging density. .
【0002】[0002]
【従来の技術】近年、半導体デバイスの高集積化と多機
能化は著しく、半導体デバイスの試験装置および試験方
法は、いかに高い保証レベルで機能の計測を実現するか
重要になってきた。2. Description of the Related Art In recent years, high integration and multifunctionality of semiconductor devices have been remarkable, and it has become important for a semiconductor device test apparatus and a test method to realize a function measurement at a high assurance level.
【0003】以下に、従来の半導体デバイスの試験方法
および試験装置について説明する。図3は一つの端子に
ついて示した、一般的な従来の半導体デバイスの試験装
置の試験回路図である。被測定用デバイス1の端子2へ
は、試験装置3が接続される。試験装置3上には2系統
のリレー4,5を配してある。前者の直流試験用リレー
4にはインピーダンス6を経て直流信号伝送路7の一端
が接続され、直流信号伝送路7のもう一端には直流計測
系8が接続される。直流計測系8は直流の電圧計や電圧
印加電流測定電源、又は電流印加電圧測定電源で構成さ
れる。一方、後者の交流試験用リレー5へはキャパシタ
ンス9を経て、接地したインピーダンス10と交流信号
伝送路11の一端が接続され、交流信号伝送路11のも
う一端には交流信号源12が接続される。交流信号源1
2の内部インピーダンスZ12と交流信号伝送路11の
特性インピーダンスZ11、及びインピーダンス10の
値Z10は、つぎのように、 Z12=Z11=Z10 という、整合のとれた関係である。交流信号源12は正
弦波や方形波、又は任意波形を発生させる。[0003] A conventional semiconductor device test method and test apparatus will be described below. FIG. 3 is a test circuit diagram of a general conventional semiconductor device test apparatus showing one terminal. The test apparatus 3 is connected to the terminal 2 of the device under test 1. On the test apparatus 3, two relays 4, 5 are arranged. One end of a DC signal transmission path 7 is connected to the former DC test relay 4 via an impedance 6, and a DC measurement system 8 is connected to the other end of the DC signal transmission path 7. The DC measurement system 8 includes a DC voltmeter, a voltage applied current measuring power supply, or a current applied voltage measuring power supply. On the other hand, a grounded impedance 10 and one end of an AC signal transmission line 11 are connected to the latter AC test relay 5 via a capacitance 9, and an AC signal source 12 is connected to the other end of the AC signal transmission line 11. . AC signal source 1
The internal impedance Z12 of FIG. 2, the characteristic impedance Z11 of the AC signal transmission line 11, and the value Z10 of the impedance 10 are in a matched relationship as follows: Z12 = Z11 = Z10. The AC signal source 12 generates a sine wave, a square wave, or an arbitrary waveform.
【0004】以上のように構成された半導体デバイスの
試験装置および試験方法について、以下にその動作につ
いて説明する。The operation of the semiconductor device test apparatus and test method configured as described above will be described below.
【0005】まず、直流試験用リレー4を閉じて直流計
測系8から直流の電圧等を印加し、被測定用デバイス1
の直流試験を実施する。次に、直流試験用リレー4を開
き、交流試験用リレー5を閉じて交流信号源12から交
流信号を印加し、被測定用デバイス1の交流試験を実施
する。First, the DC test relay 4 is closed, and a DC voltage or the like is applied from the DC measurement system 8 so that the device under test 1
Conduct a DC test. Next, the DC test relay 4 is opened, the AC test relay 5 is closed, an AC signal is applied from the AC signal source 12, and the AC test of the device under test 1 is performed.
【0006】[0006]
【発明が解決しようとする課題】しかしながら上記の従
来の構成では、被測定用デバイス1で直流と交流の試験
が必要な場合、一つの端子2へは、直流試験用リレー4
と交流試験用リレー5の二つのリレーを接続する必要が
あった。高集積化と多機能化した被測定用デバイス1で
直流と交流の試験が多くの端子で必要な場合、接続する
リレー4,5は端子に比例して増加し、試験装置3の実
装面積とサイズが大きくなるという欠点を有していた。However, in the above-described conventional configuration, when DC and AC tests are required for the device under test 1, a DC test relay 4 is connected to one terminal 2.
And two relays of the AC test relay 5. When DC and AC tests are required at many terminals in the device under test 1 with high integration and multifunctionality, the relays 4 and 5 to be connected are increased in proportion to the terminals, and the mounting area of the test apparatus 3 is reduced. There was a disadvantage that the size became large.
【0007】本発明は、上記従来の課題を解決するもの
で、一つの端子へ接続する二つのリレーを削除し、試験
装置の実装面積とサイズを小さくすることのできる半導
体デバイスの試験方法および試験装置を提供することを
目的とする。SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems, and eliminates two relays connected to one terminal to reduce a mounting area and a size of a test apparatus. It is intended to provide a device.
【0008】[0008]
【課題を解決するための手段】この目的を達成するため
に本発明の半導体デバイスの試験方法および試験装置
は、被測定用半導体デバイスの端子に対し2系統の伝送
系を備え、一方の伝送系は直列インピーダンスZ1の一
端を上記半導体デバイスの端子に接続し、上記直列イン
ピーダンスZ1の他端に一端を接地したキャパシタンス
C1の他端と直流信号伝送路の一端を接続し、他方の伝
送系は直列キャパシタンスC2の一端を上記半導体デバ
イスの端子に接続し、上記直列キャパシタンスC2の他
端に一端を接地したインピーダンスZ2の他端と特性イ
ンピーダンスZ0の交流信号伝送路の一端を接続し、そ
の交流信号伝送路の特性インピーダンスZ0と、インピ
ーダンスZ1とインピーダンスZ2の合成インピーダン
スZ1In order to achieve this object, a semiconductor device test method and a test apparatus according to the present invention include two transmission systems for terminals of a semiconductor device to be measured, and one of the transmission systems. Connects one end of a series impedance Z1 to a terminal of the semiconductor device, connects the other end of a capacitance C1 having one end grounded to the other end of the series impedance Z1, and one end of a DC signal transmission line, and connects the other transmission system in series. One end of a capacitance C2 is connected to the terminal of the semiconductor device, the other end of the series capacitance C2 is connected to the other end of an impedance Z2 having one end grounded, and one end of an AC signal transmission line having a characteristic impedance Z0. Characteristic impedance Z0 of the road and a combined impedance Z1 of the impedance Z1 and the impedance Z2.
【0009】[0009]
【外5】 [Outside 5]
【0010】Z2とが等しく(Z0=Z1Z2 is equal (Z0 = Z1
【0011】[0011]
【外6】 [Outside 6]
【0012】Z2)、上記キャパシタンスC1,C2は
交流信号に対し、充分小さいインピーダンス値をとるよ
うにした構成による。Z2) The capacitances C1 and C2 are configured to have a sufficiently small impedance value with respect to an AC signal.
【0013】[0013]
【作用】この構成によって、キャパシタンスC2を設け
たことにより、直流試験の実施時に、直流成分が遮断さ
れ以降の交流試験用伝送系には影響を及ぼさず、又キャ
パシタンスC1を設けたことにより、交流試験の実施時
に、交流成分が遮断され以降の直流試験用伝送系には影
響を及ぼさない。更にZ0=Z1With this configuration, the provision of the capacitance C2 prevents the DC component from being interrupted during the DC test and does not affect the transmission system for the AC test after the DC test is performed. When the test is performed, the AC component is cut off and the transmission system for the DC test is not affected. Further, Z0 = Z1
【0014】[0014]
【外7】 [Outside 7]
【0015】Z2という整合条件が成立しているので、
リレーを用いなくとも従来例と同様の試験をすることが
できる。Since the matching condition Z2 is satisfied,
A test similar to the conventional example can be performed without using a relay.
【0016】[0016]
【実施例】以下本発明の一実施例について、図面を参照
しながら説明する。An embodiment of the present invention will be described below with reference to the drawings.
【0017】図1は本発明の一実施例における一つの端
子について示した半導体デバイスの試験装置の試験回路
図である。被測定用半導体デバイス21の端子22へは
試験装置23が接続される。試験装置23上には2系統
の伝送系を配してある。前者の直流試験用伝送系はイン
ピーダンス24を経て、接地したキャパシタンス25と
直流信号伝送路26の一端が接続され、直流信号伝送路
26のもう一端には直流計測系27が接続される。直流
計測系27は直流の電圧計や電圧印加電流測定電源、又
は電流印加電圧測定電源で構成される。一方、後者の交
流試験用伝送系はキャパシタンス28を経て、接地した
インピーダンス29と交流信号伝送路30の一端が接続
され、交流信号伝送路30のもう一方の一端には交流信
号源31が接続される。交流信号源31の内部インピー
ダンスZ31と交流信号伝送路30の特性インピーダン
スZ0とが等しく、その値とインピーダンス24,29
の並列インピーダンスZ1FIG. 1 is a test circuit diagram of a semiconductor device test apparatus showing one terminal in one embodiment of the present invention. A test apparatus 23 is connected to a terminal 22 of the semiconductor device 21 to be measured. Two transmission systems are arranged on the test device 23. In the former DC test transmission system, a grounded capacitance 25 and one end of a DC signal transmission line 26 are connected via an impedance 24, and a DC measurement system 27 is connected to the other end of the DC signal transmission line 26. The DC measurement system 27 includes a DC voltmeter, a voltage applied current measuring power supply, or a current applied voltage measuring power supply. On the other hand, in the latter transmission system for an AC test, a grounded impedance 29 and one end of an AC signal transmission line 30 are connected via a capacitance 28, and an AC signal source 31 is connected to the other end of the AC signal transmission line 30. You. The internal impedance Z31 of the AC signal source 31 is equal to the characteristic impedance Z0 of the AC signal transmission line 30, and the value and the impedance 24, 29
Parallel impedance Z1
【0018】[0018]
【外8】 [Outside 8]
【0019】Z2が等しい。すなわちZ31=Z0=Z
1Z2 is equal. That is, Z31 = Z0 = Z
1
【0020】[0020]
【外9】 [Outside 9]
【0021】Z2のように整合のとれた関係であり、キ
ャパシタンス28,25は交流信号に対し、充分に小さ
いインピーダンス値をとる。交流信号源31は正弦波や
方形波、又は任意波形を発生させる。This is a matched relationship like Z2, and the capacitances 28 and 25 take a sufficiently small impedance value with respect to the AC signal. The AC signal source 31 generates a sine wave, a square wave, or an arbitrary waveform.
【0022】以上のように構成された半導体デバイスの
試験装置について、以下にその動作について説明する。
まず、直流計測系27から直流の電圧等を印加し、被測
定用半導体デバイス21の直流試験を実施する。次に、
交流信号源31から交流信号を印加し、被測定用半導体
デバイス21の交流試験を実施する。The operation of the semiconductor device test apparatus configured as described above will be described below.
First, a DC voltage or the like is applied from the DC measurement system 27 to perform a DC test on the semiconductor device 21 to be measured. next,
An AC signal is applied from an AC signal source 31 to perform an AC test on the semiconductor device 21 to be measured.
【0023】以上のように本実施例によれば、キャパシ
タンス28を設けたことにより、直流試験の実施時に、
直流成分が遮断され以降の交流試験用伝送系には影響を
及ぼさず、又キャパシタンス25を設けたことにより、
交流試験の実施時に、交流成分が遮断され以降の直流試
験用伝送系には影響を及ぼさない。更に、Z31=Z0
=Z1As described above, according to this embodiment, the provision of the capacitance 28 enables
It has no effect on the transmission system for AC test after the DC component is cut off, and by providing the capacitance 25,
When the AC test is performed, the AC component is cut off and does not affect the transmission system for the DC test. Further, Z31 = Z0
= Z1
【0024】[0024]
【外10】 [Outside 10]
【0025】Z2という整合条件が成立しているので、
リレーを用いなくとも従来例と同様の試験効果が得られ
る。なお、実施例では並列インピーダンスZ1Since the matching condition of Z2 is satisfied,
The same test effect as the conventional example can be obtained without using a relay. In the embodiment, the parallel impedance Z1
【0026】[0026]
【外11】 [Outside 11]
【0027】Z2について述べたが、各種の組合せが存
在し、広く合成インピーダンスの場合にも適用できる。Although Z2 has been described, there are various combinations, and the present invention can be widely applied to the case of a combined impedance.
【0028】図2は本発明の一実施例における、半導体
デバイスの試験方法の手順である。まず、始めに直流系
の試験を行ない、つぎに交流系の試験を行なう。本発明
の独特の効果として、直流試験と交流試験を同時に実施
することもできる。例えば、交流信号を印加しながら直
流動作点の測定や、直流動作電圧を印加してそのうえに
交流信号を重畳する印加試験ができる。FIG. 2 shows a procedure of a method for testing a semiconductor device according to an embodiment of the present invention. First, a DC system test is performed, and then an AC system test is performed. As a unique effect of the present invention, a DC test and an AC test can be performed simultaneously. For example, a DC operating point can be measured while applying an AC signal, or an application test can be performed in which a DC operating voltage is applied and an AC signal is superimposed thereon.
【0029】以上のように、高集積化と多機能化した被
測定用半導体デバイスで、直流と交流の試験が多くの端
子で必要な場合でも、端子へ接続するリレーを削除し、
試験装置の実装面積とサイズを小さくすることのできる
半導体デバイスの試験方法および試験装置を実現するこ
とができる。As described above, in a highly integrated and multifunctional semiconductor device to be measured, even if a test of DC and AC is required at many terminals, the relay connected to the terminals is deleted.
A test method and a test apparatus for a semiconductor device that can reduce the mounting area and the size of the test apparatus can be realized.
【0030】[0030]
【発明の効果】以上のように本発明は、被測定用半導体
デバイスの端子に対し2系統の伝送系を備え、一方の伝
送系は直列インピーダンスZ1の一端を上記半導体デバ
イスの端子に接続し、上記直列インピーダンスZ1の他
端に一端を接地したキャパシタンスC1の他端と直流信
号伝送路の一端を接続し、他方の伝送系は直列キャパシ
タンスC2の一端を上記半導体デバイスの端子に接続
し、上記直列キャパシタンスC2の他端に一端を接地し
たインピーダンスZ2の他端と特性インピーダンスZ0
の交流信号伝送路の一端を接続し、その交流信号伝送路
の特性インピーダンスZ0と、インピーダンスZ1とイ
ンピーダンスZ2の合成インピーダンスZ1As described above, the present invention has two transmission systems for the terminals of the semiconductor device to be measured, and one transmission system has one end of the series impedance Z1 connected to the terminals of the semiconductor device. The other end of the capacitance C1 having one end grounded to the other end of the series impedance Z1 is connected to one end of a DC signal transmission line, and the other transmission system is connected to one end of a series capacitance C2 to a terminal of the semiconductor device. The other end of the impedance Z2 having one end grounded to the other end of the capacitance C2 and the characteristic impedance Z0
Is connected to one end of the AC signal transmission line, and a characteristic impedance Z0 of the AC signal transmission line and a combined impedance Z1 of the impedance Z1 and the impedance Z2.
【0031】[0031]
【外12】 [Outside 12]
【0032】Z2とが等しく(Z0=Z1Z2 is equal (Z0 = Z1
【0033】[0033]
【外13】 [Outside 13]
【0034】Z2)、上記キャパシタンスC1,C2は
交流信号に対し、充分小さいインピーダンス値をとるよ
うにした構成によるので、端子へ接続するリレーを削除
でき、実装面積とサイズを小さくした直流試験と交流試
験が同時に実施できる優れた半導体デバイスの試験方法
および半導体デバイスの試験装置を提供できる。Z2) Since the capacitances C1 and C2 have a sufficiently small impedance value with respect to the AC signal, the relay connected to the terminal can be eliminated, and the DC test and the AC test with the reduced mounting area and size can be performed. It is possible to provide an excellent semiconductor device test method and a semiconductor device test apparatus capable of simultaneously performing tests.
【図1】本発明の一実施例における半導体デバイスの試
験方法を実施するための試験装置の回路図FIG. 1 is a circuit diagram of a test apparatus for performing a semiconductor device test method according to an embodiment of the present invention.
【図2】図1の回路図を用いた半導体デバイスの試験方
法の手順図FIG. 2 is a flowchart of a test method of a semiconductor device using the circuit diagram of FIG. 1;
【図3】従来の半導体デバイスの試験方法を実施するた
めの試験装置の回路図FIG. 3 is a circuit diagram of a test apparatus for performing a conventional semiconductor device test method.
21 被測定用半導体デバイス 22 端子 23 試験装置 24 インピーダンス(インピーダンスZ1) 25 キャパシタンス(キャパシタンスC1) 26 直流信号伝送路 27 直流計測系 28 キャパシタンス(キャパシタンスC2) 29 インピーダンス(インピーダンスZ2) 30 交流信号伝送路 31 交流信号源 Reference Signs List 21 semiconductor device under test 22 terminal 23 test apparatus 24 impedance (impedance Z1) 25 capacitance (capacitance C1) 26 DC signal transmission path 27 DC measurement system 28 capacitance (capacitance C2) 29 impedance (impedance Z2) 30 AC signal transmission path 31 AC signal source
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) G01R 31/26 H01L 21/66 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 6 , DB name) G01R 31/26 H01L 21/66
Claims (3)
系統の伝送系を備え、一方の伝送系は直列インピーダン
スZ1の一端を前記半導体デバイスの端子に接続し、前
記直列インピーダンスZ1の他端に一端を接地したキャ
パシタンスC1の他端と直流信号伝送路の一端を接続
し、他方の伝送系は直列キャパシタンスC2の一端を前
記半導体デバイスの端子に接続し、前記直列キャパシタ
ンスC2の他端に一端を接地したインピーダンスZ2の
他端と特性インピーダンスZ0の交流信号伝送路の一端
を接続し、その交流信号伝送路の特性インピーダンスZ
0と、インピーダンスZ1とインピーダンスZ2の合成
インピーダンスZ1 【外1】 Z2とが等しく(Z0=Z1 【外2】 Z2)、前記キャパシタンスC1,C2は交流信号に対
し、充分小さいインピーダンス値をとるようにしたこと
を特徴とする半導体デバイスの試験方法。1. A terminal for a semiconductor device under test
One transmission system has one end of a series impedance Z1 connected to a terminal of the semiconductor device, the other end of a capacitance C1 having one end grounded to the other end of the series impedance Z1, and the other end of a DC signal transmission line. One end is connected, the other transmission system is connected to one end of the series capacitance C2 to the terminal of the semiconductor device, and the other end of the impedance Z2 having one end grounded to the other end of the series capacitance C2 and the AC signal transmission of the characteristic impedance Z0. One end of the AC signal transmission line and the characteristic impedance Z of the AC signal transmission line.
0, and a combined impedance Z1 of the impedance Z1 and the impedance Z2. Z2 is equal (Z0 = Z1) Z2) A method of testing a semiconductor device, wherein the capacitances C1 and C2 have a sufficiently small impedance value with respect to an AC signal.
が交流試験であり、その直流試験と交流試験とを同時に
行うことを特徴とする請求項1記載の半導体デバイスの
試験方法。2. The method according to claim 1, wherein one of the transmission systems is a DC test and the other transmission system is an AC test, and the DC test and the AC test are performed simultaneously.
系統の伝送系を備え、一方の伝送系が前記半導体デバイ
スの端子に一端を接続した直列インピーダンスZ1と、
その直列インピーダンスZ1の他端に接続した一端を接
地したキャパシタンスC1と、そのキャパシタンスC1
と並列に前記直列インピーダンスZ1の他端に接続した
直流信号伝送路とを少なくとも有し、他方の伝送系が前
記半導体デバイスの端子に一端を接続した直列キャパシ
タンスC2と、その直列キャパシタンスC2の他端に接
続した一端を接地したインピーダンスZ2と、そのイン
ピーダンスZ2と並列に前記直列キャパシタンスC2の
他端に接続した特性インピーダンスZ0の交流信号伝送
路とを少なくとも有し、その交流信号伝送路の特性イン
ピーダンスZ0と、インピーダンスZ1とインピーダン
スZ2の合成インピーダンスZ1 【外3】 Z2とが等しく(Z0=Z1 【外4】 Z2)、前記キャパシタンスC1,C2は交流信号に対
し、充分小さいインピーダンス値をとるようにしたこと
を特徴とする半導体デバイスの試験装置。3. The terminal of the semiconductor device under test has two terminals.
A series impedance Z1 having one end connected to a terminal of the semiconductor device;
A capacitor C1 having one end connected to the other end of the series impedance Z1 and having one end grounded;
At least a DC signal transmission path connected in parallel to the other end of the series impedance Z1, the other transmission system having a series capacitance C2 having one end connected to the terminal of the semiconductor device, and the other end of the series capacitance C2. And an AC signal transmission line having a characteristic impedance Z0 connected to the other end of the series capacitance C2 in parallel with the impedance Z2, and a characteristic impedance Z0 of the AC signal transmission line. And a combined impedance Z1 of the impedance Z1 and the impedance Z2. Z2 is equal (Z0 = Z1) Z2) The semiconductor device test apparatus, wherein the capacitances C1 and C2 have sufficiently small impedance values with respect to an AC signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3164331A JP2922020B2 (en) | 1991-07-04 | 1991-07-04 | Semiconductor device test method and semiconductor device test apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3164331A JP2922020B2 (en) | 1991-07-04 | 1991-07-04 | Semiconductor device test method and semiconductor device test apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0511010A JPH0511010A (en) | 1993-01-19 |
| JP2922020B2 true JP2922020B2 (en) | 1999-07-19 |
Family
ID=15791143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3164331A Expired - Fee Related JP2922020B2 (en) | 1991-07-04 | 1991-07-04 | Semiconductor device test method and semiconductor device test apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2922020B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TR201907415A2 (en) * | 2019-05-16 | 2019-06-21 | Unimak Makina Sanayii Ve Ticaret A S | ONE PRESSURE CASTING MACHINE FOR VITRIFIED PRODUCTS |
-
1991
- 1991-07-04 JP JP3164331A patent/JP2922020B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0511010A (en) | 1993-01-19 |
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