JP2925428B2 - High frequency circuit board structure - Google Patents
High frequency circuit board structureInfo
- Publication number
- JP2925428B2 JP2925428B2 JP5126412A JP12641293A JP2925428B2 JP 2925428 B2 JP2925428 B2 JP 2925428B2 JP 5126412 A JP5126412 A JP 5126412A JP 12641293 A JP12641293 A JP 12641293A JP 2925428 B2 JP2925428 B2 JP 2925428B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric substrate
- chip component
- hole
- frequency circuit
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
Landscapes
- Waveguide Connection Structure (AREA)
- Waveguides (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、マイクロ波機器などに
用いられる高周波回路基板構造に関するもので、例えば
抵抗やコンデンサ等のチップ部品を実装する高周波回路
基板構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit board structure used for microwave equipment and the like, and more particularly to a high-frequency circuit board structure for mounting chip parts such as resistors and capacitors.
【0002】[0002]
【従来の技術】従来の高周波回路基板構造について、図
3を参照して説明する。2. Description of the Related Art A conventional high-frequency circuit board structure will be described with reference to FIG.
【0003】31は誘電体基板で、誘電体基板31の表
面にはマイクロストリップ線路32a、32bが、ま
た、裏面には接地導体33が形成される。上記した構成
の誘電体基板31は、裏面の接地導体33が金属基板3
4の接地面34aに接するように、金属基板34上に配
置される。そして、誘電体基板31上に形成されたマイ
クロストリップ線路32a、32b間に、抵抗やコンデ
ンサ等のチップ部品35が接続される。A dielectric substrate 31 has microstrip lines 32a and 32b formed on the front surface of the dielectric substrate 31, and a ground conductor 33 formed on the back surface. In the dielectric substrate 31 having the above-described configuration, the ground conductor 33 on the back surface is
4 is disposed on the metal substrate 34 so as to be in contact with the ground plane 34a. Then, chip components 35 such as resistors and capacitors are connected between the microstrip lines 32a and 32b formed on the dielectric substrate 31.
【0004】次に、図3のような構成で、誘電体基板3
1面の回路を高周波的に短絡する場合の高周波回路基板
構造について、図4を参照して説明する。なお、図4で
は図3と同一部分には同一符号を付し、重複する説明は
省略する。Next, a dielectric substrate 3 having a configuration as shown in FIG.
The structure of a high-frequency circuit board when one circuit is short-circuited at high frequency will be described with reference to FIG. In FIG. 4, the same parts as those in FIG. 3 are denoted by the same reference numerals, and duplicate description will be omitted.
【0005】この場合、マイクロストリップ線路32
a、32b間に接続されるチップ部品35として、例え
ばコンデンサが使用される。そして、誘電体基板31に
スルーホール36が形成され、スルーホール36周囲に
形成された導電層37のインダクタンス分とチップ部品
35のコンデンサとの直列回路で、誘電体基板31面の
回路を短絡する。In this case, the microstrip line 32
For example, a capacitor is used as the chip component 35 connected between the a and 32b. Then, a through hole 36 is formed in the dielectric substrate 31, and a circuit on the surface of the dielectric substrate 31 is short-circuited by a series circuit of the inductance of the conductive layer 37 formed around the through hole 36 and the capacitor of the chip component 35. .
【0006】[0006]
【発明が解決しようとする課題】上記したようにチップ
部品35を誘電体基板31上に配置する場合、チップ部
品35直下の波長短縮率は、ほぼ誘電体基板31の比誘
電率の平方根の逆数となる。したがって、チップ部品3
5部分の波長は誘電体基板31の比誘電率で決定され
る。このため、誘電体基板31上に形成される高周波回
路を小形化するために、例えば誘電体基板31の比誘電
率を大きくすると、チップ部品35部分の波長が短くな
る。このようにチップ部品35部分の波長が短くなる
と、チップ部品35部分の通過位相量が増大し、VSW
R等のマイクロ波特性が劣化する。When the chip component 35 is disposed on the dielectric substrate 31 as described above, the wavelength shortening rate immediately below the chip component 35 is substantially the reciprocal of the square root of the dielectric constant of the dielectric substrate 31. Becomes Therefore, chip component 3
The wavelengths of the five portions are determined by the relative permittivity of the dielectric substrate 31. Therefore, in order to reduce the size of the high-frequency circuit formed on the dielectric substrate 31, for example, if the relative dielectric constant of the dielectric substrate 31 is increased, the wavelength of the chip component 35 becomes shorter. As described above, when the wavelength of the chip component 35 becomes short, the amount of passing phase of the chip component 35 increases, and the VSW
Microwave characteristics such as R deteriorate.
【0007】マイクロ波特性が劣化した高周波回路基板
構造を、例えば電力の分配器や合成器の終端抵抗として
使用すると、VSWR特性の劣化が原因してアイソレー
ションが悪くなる。また、スルーホール36周囲の導電
層37のインダクタンス分とチップ部品35のコンデン
サとを直列に接続して、誘電体基板31上の回路を短絡
する場合、コンデンサ部分の通過位相量の増大分を吸収
する必要から、例えばキャパシタンスの値は小さく選ば
れる。このため、短絡できる周波数範囲が狭くなってし
まう。When a high-frequency circuit board structure having deteriorated microwave characteristics is used, for example, as a terminating resistor of a power distributor or a combiner, isolation deteriorates due to deterioration of VSWR characteristics. When the circuit on the dielectric substrate 31 is short-circuited by connecting the inductance of the conductive layer 37 around the through hole 36 and the capacitor of the chip component 35 in series, the increase in the amount of phase passing through the capacitor is absorbed. Therefore, for example, the value of the capacitance is selected to be small. For this reason, the frequency range in which short-circuiting is possible is narrowed.
【0008】本発明は、上記の欠点を解決するもので、
チップ部品の通過位相量を小さくし、マイクロ波特性を
改善した高周波回路基板構造を提供することを目的とす
る。The present invention solves the above disadvantages,
An object of the present invention is to provide a high-frequency circuit board structure in which the amount of phase passing through a chip component is reduced and microwave characteristics are improved.
【0009】[0009]
【課題を解決するための手段】本発明は、マイクロスト
リップ線路が表面に形成され、裏面に接地導体が形成さ
れ、スルーホールが形成された誘電体基板と、前記スル
ーホールに形成され、前記マイクロストリップ線路と前
記誘電体基板の前記接地導体に接続された導電層と、前
記マイクロストリップ線路に接続されるチップ部品と、
前記誘電体基板の接地導体が接するように前記誘電体基
板が載置され、接地面を形成する金属基板とを具備した
高周波回路基板構造において、前記チップ部品と前記金
属基板の接地面との間が空気層となるように、前記チッ
プ部品直下の前記誘電体基板に穴を設けている。Means for Solving the Problems The present invention is formed on the microstrip line surface, is grounded conductor on the back surface is formed, and the dielectric substrate through-hole is formed, the sul
Hole formed in front of the microstrip line.
A conductive layer connected to the ground conductor of the dielectric substrate, and a chip component connected to the microstrip line;
A high-frequency circuit board structure comprising a metal substrate forming a ground plane, wherein the dielectric board is mounted so that a ground conductor of the dielectric board is in contact with the ground plane; A hole is provided in the dielectric substrate immediately below the chip component so that the air becomes an air layer.
【0010】また、前記誘電体基板の穴の部分に前記接
地面の一部が入り込むように、前記金属基板面に突起を
形成している。[0010] Further, a projection is formed on the surface of the metal substrate so that a part of the ground plane enters the hole of the dielectric substrate.
【0011】[0011]
【作用】上記した構成によれば、チップ部品直下の誘電
体基板に穴が形成されているので、チップ部品と金属基
板の接地面との間が空気層になる。したがって、チップ
部品部分での通過位相量が小さくなり、VSWR等のマ
イクロ波特性の劣化が防げる。According to the above construction, since the hole is formed in the dielectric substrate immediately below the chip component, an air layer is formed between the chip component and the ground plane of the metal substrate. Therefore, the amount of passing phase in the chip component portion is reduced, and deterioration of microwave characteristics such as VSWR can be prevented.
【0012】[0012]
【実施例】以下、本発明の実施例について、図1および
図2を参照して説明する。EXAMPLES Hereinafter, actual施例of the present invention, FIGS. 1 and
This will be described with reference to FIG .
【0013】1は誘電体基板で、誘電体基板1の表面に
はマイクロストリップ線路2a、2bが形成される。ま
た、裏面には接地導体3が形成される。上記した構成の
誘電体基板1は、接地導体3が金属基板4の接地面4a
に接するようにして、金属基板4上に配置される。そし
て、誘電体基板1上に形成されたマイクロストリップ線
路2a、2b間に、例えば抵抗からなるチップ部品5が
配置される。このとき、チップ部品5の幅や誘電体基板
1の厚みは、所望のインピーダンスとなるように選定さ
れる。また、チップ部品5と金属基板4の接地面4aと
の間が空気層となるように、チップ部品5直下の誘電体
基板1に穴6が形成される。Reference numeral 1 denotes a dielectric substrate, and microstrip lines 2a and 2b are formed on the surface of the dielectric substrate 1. The ground conductor 3 is formed on the back surface. In the dielectric substrate 1 having the above-described configuration, the ground conductor 3 is connected to the ground plane 4a of the metal substrate 4.
Is disposed on the metal substrate 4 so as to be in contact with. Then, between the microstrip lines 2a and 2b formed on the dielectric substrate 1, a chip component 5 made of, for example, a resistor is arranged. At this time, the width of the chip component 5 and the thickness of the dielectric substrate 1 are selected so as to have a desired impedance. A hole 6 is formed in the dielectric substrate 1 immediately below the chip component 5 so that an air space is formed between the chip component 5 and the ground plane 4a of the metal substrate 4.
【0014】上記の構造によれば、チップ部品5と金属
基板4の接地面4aとの間は空気層となっているので、
チップ部品5直下部分の比誘電率はほぼ1となる。した
がって、チップ部品5部分の波長は短縮されない。この
ため、チップ部品5部分の通過位相量は小さくなり、V
SWRの劣化を少なくできる。According to the above structure, an air space is formed between the chip component 5 and the ground plane 4a of the metal substrate 4.
The relative dielectric constant immediately below the chip component 5 is substantially 1. Therefore, the wavelength of the chip component 5 is not shortened. For this reason, the passing phase amount of the chip component 5 becomes small, and V
Deterioration of SWR can be reduced.
【0015】ここで、誘電体基板1上の回路を高周波的
に短絡する構造について図2を参照して説明する。な
お、図2では図1と同一部分には同一符号を付し、重複
する説明は省略する。 Here, the circuit on the dielectric substrate 1 has a high frequency.
Will be described with reference to FIG. In FIG. 2, the same parts as those in FIG. 1 are denoted by the same reference numerals, and duplicate description will be omitted.
【0016】図1ではチップ部品5は抵抗であったが、
図2ではチップ部品5として、例えばコンデンサが使用
される。そして、誘電体基板1にスルーホール7が形成
され、スルーホール7の周囲には導電層7aが形成され
る。なお、導電層7aは、誘電体基板1上のマイクロス
トリップ線路2bや誘電体基板1裏面の接地導体3に接
続されている。また、チップ部品5直下の誘電体基板1
に形成された穴6に、金属基板4の接地面4aの一部が
入り込むように、金属基板4に突起4bが形成されてい
る。In FIG. 1, the chip component 5 is a resistor,
In FIG. 2, for example, a capacitor is used as the chip component 5. Then, a through hole 7 is formed in the dielectric substrate 1, and a conductive layer 7 a is formed around the through hole 7. The conductive layer 7a is connected to the microstrip line 2b on the dielectric substrate 1 and the ground conductor 3 on the back surface of the dielectric substrate 1. The dielectric substrate 1 directly below the chip component 5
A projection 4b is formed on the metal substrate 4 so that a part of the ground plane 4a of the metal substrate 4 enters the hole 6 formed in the metal substrate 4.
【0017】上記の構成によれば、スルーホール7周囲
の導電層7aによるインダクタンス分とチップ部品5の
コンデンサとが直列に接続されて共振回路が形成され
る。そして、この共振回路を利用して、例えば誘電体基
板1上の回路を高周波的に短絡できる。According to the above configuration, a resonance circuit is formed by connecting the inductance of the conductive layer 7a around the through hole 7 and the capacitor of the chip component 5 in series. Using this resonance circuit, for example, a circuit on the dielectric substrate 1 can be short-circuited at a high frequency.
【0018】また、チップ部品5と金属基板4の接地面
4aとの間は、空気層になっているので、チップ部品5
直下部分の比誘電率はほぼ1となり、チップ部品5のコ
ンデンサ部分の波長は短縮されない。Since an air space is formed between the chip component 5 and the ground plane 4a of the metal substrate 4, the chip component 5
The relative permittivity of the portion directly below is almost 1, and the wavelength of the capacitor portion of the chip component 5 is not shortened.
【0019】また、金属基板4の接地面4aに突起4b
を設けることにより、高周波回路の特性インピーダンス
が小さくでき、チップ部品5のコンデンサ部分の等価イ
ンダクタンス分を小さくできる。したがって、この等価
インダクタンスおよびスルーホール7の等価インダクタ
ンスの和とチップ部品5のコンデンサ2との直列共振
で、誘電体基板1上の高周波回路を短絡する場合に、短
絡できる周波数範囲を広くできる。なお、前記突起4b
の高さを変えることにより、高周波回路の特性インピー
ダンスの値を適宜調整できる。A protrusion 4b is formed on the ground plane 4a of the metal substrate 4.
Is provided, the characteristic impedance of the high-frequency circuit can be reduced, and the equivalent inductance of the capacitor portion of the chip component 5 can be reduced. Therefore, when the high-frequency circuit on the dielectric substrate 1 is short-circuited by the series resonance of the sum of the equivalent inductance and the equivalent inductance of the through hole 7 and the capacitor 2 of the chip component 5, the frequency range in which short-circuiting can be performed can be widened. The protrusion 4b
By changing the height of the high-frequency circuit, the value of the characteristic impedance of the high-frequency circuit can be appropriately adjusted.
【0020】[0020]
【発明の効果】本発明によれば、チップ部品と金属基板
の接地面との間が空気層になっているので、チップ部品
の通過位相量を小さくでき、マイクロ波特性を改善でき
る。According to the present invention, since the air space is formed between the chip component and the ground plane of the metal substrate, the amount of phase passing through the chip component can be reduced, and the microwave characteristics can be improved.
【図1】本発明の一実施例を示す概略断面図である。FIG. 1 is a schematic sectional view showing one embodiment of the present invention.
【図2】本発明の他の実施例を示す概略断面図である。FIG. 2 is a schematic sectional view showing another embodiment of the present invention.
【図3】従来例を示す概略断面図である。FIG. 3 is a schematic sectional view showing a conventional example.
【図4】従来の他の例を示す概略断面図である。FIG. 4 is a schematic sectional view showing another conventional example.
1…誘電体基板 2a、2b…マイクロストリップ線路 3…接地導体 4…金属基板 4a…接地面 5…チップ部品 6…穴 DESCRIPTION OF SYMBOLS 1 ... Dielectric substrate 2a, 2b ... Microstrip line 3 ... Ground conductor 4 ... Metal substrate 4a ... Ground plane 5 ... Chip component 6 ... Hole
フロントページの続き (56)参考文献 特開 昭56−6502(JP,A) 特開 平3−99510(JP,A) 特開 平5−110308(JP,A) 特開 昭62−247603(JP,A) 特開 昭60−214601(JP,A) 実開 昭50−117744(JP,U)Continuation of the front page (56) References JP-A-56-6502 (JP, A) JP-A-3-99510 (JP, A) JP-A-5-110308 (JP, A) JP-A-62-247603 (JP) JP-A-60-214601 (JP, A) JP-A-50-117744 (JP, U)
Claims (2)
れ、裏面に接地導体が形成され、スルーホールが形成さ
れた誘電体基板と、前記スルーホールに形成され、前記
マイクロストリップ線路と前記誘電体基板の前記接地導
体に接続された導電層と、前記マイクロストリップ線路
に接続される終端インピーダンスを形成するチップ部品
と、前記誘電体基板の接地導体が接するように前記誘電
体基板が載置され、接地面を形成する金属基板とを具備
した高周波回路基板構造において、前記チップ部品と前
記金属基板の接地面との間が空気層となるように、前記
チップ部品直下の前記誘電体基板に穴を設けたことを特
徴とする高周波回路基板構造。1. A dielectric substrate in which a microstrip line is formed on a front surface, a ground conductor is formed on a rear surface, and a through hole is formed, and a dielectric substrate formed in the through hole, the microstrip line and the dielectric substrate are formed. A conductive layer connected to the ground conductor, a chip component forming a terminating impedance connected to the microstrip line, and the dielectric substrate placed on the dielectric substrate so that the ground conductor is in contact therewith ; In a high-frequency circuit board structure including a metal substrate forming a hole, a hole is provided in the dielectric substrate immediately below the chip component so that an air layer is formed between the chip component and a ground plane of the metal substrate. A high-frequency circuit board structure, characterized in that:
の一部が入り込むように、前記金属基板面に突起を形成
したことを特徴とする請求項1記載の高周波回路基板構
造。2. The high-frequency circuit board structure according to claim 1, wherein a projection is formed on the surface of the metal substrate so that a part of the ground plane enters a hole of the dielectric substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5126412A JP2925428B2 (en) | 1993-05-28 | 1993-05-28 | High frequency circuit board structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5126412A JP2925428B2 (en) | 1993-05-28 | 1993-05-28 | High frequency circuit board structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06338701A JPH06338701A (en) | 1994-12-06 |
| JP2925428B2 true JP2925428B2 (en) | 1999-07-28 |
Family
ID=14934526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5126412A Expired - Fee Related JP2925428B2 (en) | 1993-05-28 | 1993-05-28 | High frequency circuit board structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2925428B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5618923B2 (en) * | 1972-06-30 | 1981-05-02 | ||
| JPS566502A (en) * | 1979-06-29 | 1981-01-23 | Nippon Telegr & Teleph Corp <Ntt> | Microstrip line |
-
1993
- 1993-05-28 JP JP5126412A patent/JP2925428B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06338701A (en) | 1994-12-06 |
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