JP2929862B2 - Electrophotographic photoreceptor and electrophotographic method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an amorphous silicon electrophotographic photosensitive member and an electrophotographic method using the same.

[0002]

2. Description of the Related Art In the electrophotography method most commonly used at present, a corona discharge such as a corotron or a scorotron is used for charging. However, when corona discharge is used, there are problems such as defective images such as image blur and image loss due to discharge products, deterioration of ozone, and influence on the environment. In recent years, hydrogenated amorphous silicon photoreceptors have been proposed as long-life photoreceptors with excellent surface hardness, high sensitivity, and durability. The required current is large, and in the case of charging by corona discharge, there have been problems such as generation of ozone and image blurring at high humidity. For this reason, use of a contact charging method such as roller charging instead of corona discharge has been proposed (Japanese Patent Laid-Open No. 63-210864,
64-29875 and JP-A-2-203359) still have insufficient charging. Furthermore, when a rubber roller is used as a contact charger, the hydrogenated amorphous silicon photoreceptor has high hardness, and the rubber roller wears out, causing a change with time, and is unreliable as a charging method for a long-life photoreceptor. It was.

[0003]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems in the prior art, and can sufficiently charge even at high humidity by a contact charging method. It is another object of the present invention to provide an electrophotographic photosensitive member capable of performing a copying operation stably for a long period of time. It is another object of the present invention to provide a long-life electrophotographic method which does not generate ozone, has high reliability, is suitable for high-speed operation, and has a long life. It is another object of the present invention to provide an electrophotographic method capable of simplifying the elements of the conventional electrophotographic method and realizing miniaturization and energy saving. Still another object of the present invention is to provide an image forming method which provides a high quality print without image blur even at high humidity.

[0004]

According to the present invention, a photoreceptor which is mechanically and chemically stable can be obtained by laminating a charge trapping layer and a charge injection layer on the surface of a photoreceptor. This is based on the finding that sufficiently stable charging can be performed by charging. The electrophotographic photosensitive member of the present invention, a conductive substrate, at least, a photoconductive layer made of amorphous silicon is provided, thereon a charge injection layer and the charge for injecting a the same polarity as the charging polarity of the charge Charge trapping layer for trapping,
Monodea provided in the order of the charge trapping layer and a charge injection layer
Therefore, the first electrophotographic photoreceptor has a small charge injection layer.
Amorphous silicon containing at least a group III element or
The charge trapping layer is made of amorphous carbon
At least one selected from silicon, nitrogen, oxygen and group V elements
Amorphous silicon or amorphous containing both
Positive charging polarity, characterized by being made of fast carbon
A second electrophotographic photosensitive member, which is a chargeable electrophotographic photosensitive member;
Means that the charge injection layer is made of an amorphous material containing at least a group V element.
Rufus silicon or amorphous carbon
The charge trapping layer contains carbon, nitrogen, oxygen and
Amorph containing at least one selected from elements
Made of silicon or amorphous carbon
Electrophotographic photoreceptor having a negatively chargeable polarity
It is. The electrophotographic method of the present invention includes a step of charging the above-mentioned electrophotographic photosensitive member, exposing the image, developing and fixing the metal electrophotographic photosensitive member. It is characterized by supplying electric charge and charging. In the present invention, the metal charger may be a cleaning blade.

Hereinafter, the present invention will be described with reference to the drawings.
1 to 3 are schematic cross-sectional views of an electrophotographic photoreceptor of the present invention, in which a photoconductive layer 2 mainly composed of amorphous silicon and a charge trapping layer 3 are formed on a conductive support 1.
And the charge injection layer 4 are laminated. In FIG. 2, a charge injection blocking layer 5 is further provided between the conductive support 1 and the photoconductive layer 2, and the charge trapping layer 3 has a laminated structure including three layers 7 to 9. doing. In FIG. 3, an auxiliary layer 6 is provided between the conductive support 1 and the charge injection blocking layer 5.

In the present invention, as the conductive support,
Examples thereof include metals such as aluminum, stainless steel, nickel, and chromium, and alloys thereof, and may be made of an insulating substrate subjected to a conductive treatment. Examples of the insulating substrate include a polymer film or sheet such as polyester, polyethylene, polycarbonate, polystyrene, polyamide, and polyimide, glass, and ceramics. At least the surface of the insulating substrate that comes in contact with another layer is subjected to a conductive treatment. You. Conduction treatment, the metal or,
The deposition can be performed by depositing gold, silver, copper, or the like by vapor deposition, sputtering, or ion plating. In the present invention, as the conductive support, a support formed of a Cr-Ni-containing steel generally called an austenitic stainless steel can be used, and further, a conductive support made of these austenitic stainless steels Preferably, at least a conductive layer containing molybdenum, chromium, manganese, tungsten or titanium as a main component is formed on the surface thereof. These conductive layers can be formed by plating, sputtering, or vapor deposition. As the conductive support in the present invention, a conductive support having a conductive layer formed mainly on chromium, titanium, tungsten, or molybdenum on an aluminum substrate can be used. Furthermore, a conductive support made of molybdenum, tungsten, or titanium can be used. The conductive support has a thickness of 0.5 to 50 mm, preferably 1 to 20 mm.

In the present invention, a conductive support having a polished surface may be used. That is, it is possible to use a material which has been smoothed by repeatedly performing it while changing the roughness of the abrasive from coarse particles to fine particles by buff polishing, grinding stone polishing or the like. Surface roughness is 2 in R _S
A range from S to 0.02S, preferably from 0.5S to 0.03S can be used. The surface may be completely mirror-finished or may be cloudy due to fine streaks, but as a whole it is smooth, and in lathe cutting, a convex part remains at the boundary of the cutting pitch. It is not necessary.

[0008] A charge injection blocking layer is provided on the conductive support, if desired. The charge injection blocking layer is made of amorphous silicon doped with a group III element or a group V element.
Or it consists of amorphous carbon . No. as additive
Whether a Group III element or a Group V element is used is determined by the charging polarity of the photoconductor. The charge injection blocking layer may further contain at least one of nitrogen, oxygen, carbon, and halogen in addition to the group III element or the group V element.

Furthermore, an auxiliary layer acting as an adhesive layer may be provided between the charge injection layer and the conductive support. The auxiliary layer can be made of, for example, amorphous silicon containing at least one element of nitrogen, carbon, and oxygen. The thickness is in the range of 0.01 to 5 μm, preferably 0.1 to 1 μm.

[0010] The photoconductive layer is formed mainly of amorphous silicon containing hydrogen and / or halogen. The thickness is preferably in the range of 1 to 10 μm. The content of hydrogen and / or halogen ranges from 3 to 40 atomic%. The photoconductive layer preferably contains a group III element as an impurity element for controlling conductivity. The amount of addition is determined by the charging sign of the photoreceptor and the required spectral sensitivity, and is used in the range of 0.01 to 1000 ppm. Elements such as nitrogen, carbon, and oxygen can be further added to the photoconductive layer mainly composed of amorphous silicon for the purpose of improving chargeability, reducing dark decay, improving sensitivity, and the like. The photoconductive layer may contain at least one of Ge and Sn. In the present invention,
This photoconductive layer may be composed of two types, a charge generation layer and a charge transport layer.

The charge trapping layer formed on the photoconductive layer is made of amorphous silicon or amorphous carbon containing carbon, nitrogen, oxygen and at least one element selected from the group III or group V elements.

When the charge trapping layer is mainly composed of amorphous silicon, the amorphous silicon has 3 to 40
Atomic% of hydrogen and / or halogen may be included. In addition, when mainly amorphous carbon is used,
The amorphous carbon may contain 5 to 50 atomic% of hydrogen and / or halogen. In the case of amorphous carbon, a large amount of hydrogen or halogen contained in the film is converted into a chain-like CH ₂ -bond, -CF ₂
The amount of hydrogen and halogen in the film needs to be 50 atomic% or less, since the number of -bonds or -CH ₃ bonds is increased, and as a result, the hardness of the film is impaired.

When the charge trapping layer contains a Group III or Group V element, the Group III or Group V element is selected according to the charging polarity of the photoreceptor, and the photoreceptor is charged positively. Group V element in the case, and group III element in the case of negative chargeability.
Group element is contained. The amount of group V element is 0.01 ppm
To 1000 ppm, and the amount of the group III element is appropriately set depending on the film thickness in the range of 5 ppm to 10000 ppm. The thickness of the charge trap layer is 0.01 μm
To 10 μm, preferably 0.1 μm to 5 μm.

In order to control the trap density in the charge trap layer, it is effective to contain at least one of carbon, oxygen and nitrogen. The content of these elements is
1 ppm to 99.9 atom% for carbon, 1 ppm to 60 atom% for oxygen, and 1 ppm to 60 atom% for nitrogen.

The charge injection layer provided on the charge trap layer is made of amorphous silicon or amorphous carbon containing a group III element or a group V element.
When the charge injection layer is mainly composed of amorphous silicon, the amorphous silicon may contain 3 to 40 atomic% of hydrogen and / or halogen. Also,
When amorphous carbon is mainly used, the amorphous carbon may contain 5 to 50 atomic% of hydrogen and / or halogen. In the case of amorphous carbon, a large amount of hydrogen or halogen contained in the film increases chain-like —CH ₂ —, —CF ₂ —, or —CH ₃ bonds in the film, and as a result, the hardness of the film is increased. Therefore, the amount of hydrogen and halogen in the film is 5%.
It must be 0 atomic% or less.

The Group III and Group V elements are selected according to the charging polarity of the photoreceptor. When the photoreceptor is positively charged, the Group III element is selected. Contains elements. The amount of Group III element is from 0.1 ppm to 1 ppm.
00 ppm, the amount of group V element is 0.01 ppm to 10
000 ppm. In addition, the charge injection layer may contain one or more of nitrogen, oxygen, and carbon for the purpose of controlling charge injection properties and improving surface hardness. When nitrogen is contained, the content is 1 ppm to 20 atom%. The thickness of the charge injection layer is 0.01 μm to 10 μm, preferably 0.1 μm to 5 μm.

In the present invention, the charge trapping layer or the charge injection layer is formed of the above-described group III element or group V element,
It may be composed of two or more layers of amorphous silicon containing one or more of nitrogen, oxygen and carbon, and may be formed by laminating layers of amorphous carbon containing hydrogen and / or halogen. It may be. FIG. 2 shows the charge injection layer 4 and the charge trap layer 7.
9 shows a configuration having a stacked structure of the first to ninth embodiments.

When a plurality of charge trapping layers are formed as shown in FIG. 2, each layer preferably has the following structure. That is, the first layer 7 has a carbon, oxygen or nitrogen atom concentration in the range of 0.1 to 1.0 as an atomic ratio to silicon atoms, and a film thickness in the range of 0.01 to 0.1 μm. The second layer 8 has a carbon, oxygen or nitrogen atom concentration in the range of 0.1 to 1.0 as an atomic ratio with respect to silicon atoms, and a film thickness in the range of 0.05 to 1 μm, Third layer 9
Has a carbon, oxygen or nitrogen atom concentration higher than that in the second layer 8, an atomic ratio to silicon atoms in the range of 0.5 to 1.3, and a film thickness of 0.01 to 0.1.
It is preferably in the range of μm.

Next, a method of forming each of the above layers on the conductive support will be described. Conductive Support Each layer to be formed can be formed by means such as a glow discharge decomposition method by a plasma CVD method, a sputtering method, an ion plating method, and a vacuum evaporation method. At that time, as the raw material gas, in the case of the photoconductive layer, the charge injection blocking layer and the auxiliary layer, a main raw material gas containing silicon atoms is used, and in the case of the charge trapping layer and the charge injection layer, silicon atoms are used. A main source gas containing a hydrocarbon or a halogen-substituted product thereof is used.

Taking the glow discharge decomposition method as an example, the production method is as follows. As a raw material gas,
Using the main raw material gas, a raw material gas containing a necessary additive element is added thereto to form a mixed gas. In that case, if necessary, hydrogen or an inert gas such as helium, argon, or neon can be used as a carrier gas. The glow discharge decomposition may employ either direct current or alternating current discharge, and the film forming conditions include a frequency of 0 to 5 GHz.
z, reactor internal pressure 10 ^{-5 to} 10 Torr (0.001 to 1
333 Pa), the discharge power is 10 to 3000 W, and the temperature of the support can be appropriately set in the range of 30 to 400 ° C. The film thickness can be appropriately set by adjusting the discharge time.

In the case of forming a layer made of amorphous silicon, silanes, particularly SiH ₄ and / or Si ₂ H ₆ are used as the main source gas containing silicon atoms. Further, as a source gas for containing nitrogen, oxygen and carbon, for example, the following can be used. That is, as the source gas containing nitrogen, N ₂ simple gas, N ₂
A gas of a hydrogenated nitrogen compound such as H ₃ , N ₂ H ₄ or HN ₃ can be used. As a raw material gas containing carbon, hydrocarbons such as methane, ethane, propane, and acetylene;
Halogenated hydrocarbons such as CF ₄ and C ₂ F ₆ can be used. Further, as a source gas containing oxygen,
O ₂ , N ₂ O, CO, CO _{2 and the} like can be used.

As a source gas containing a Group III element, diborane (B ₂ H ₆ ) is typically mentioned.
H _{3 and the} like can also be used. Further, (PH ₃ ) is typically used as a source gas containing a group V element gas.

The raw materials that can be used to form a film composed of amorphous carbon include the following. As a raw material of the main carbon, a general formula C _n H _{2n + 2} such as methane, ethane, propane, butane and pentane is used.
Acetylene shown in paraffinic hydrocarbon represented, ethylene, propylene, butylene, olefinic hydrocarbon represented by a general formula C _n H _2n of pentene, acetylene, arylene, a general formula C _n H _2n-2 butyne, etc. Aliphatic hydrocarbons such as hydrocarbons, cyclopropane, cyclobutane,
Examples thereof include alicyclic hydrocarbons such as cyclopentane, cyclohexane, cycloheptane, cyclobutene, cyclopentene, and cyclohexene; aromatic hydrocarbons such as benzene, toluene, xylene, naphthalene, and anthracene; and substituted products thereof. These hydrocarbon compounds may have a branched structure and may be a halogenated product. For example, halogenated hydrocarbons such as carbon tetrachloride, chloroform, carbon tetrafluoride, trifluoromethane, chlorotrifluoromethane, dichlorodifluoromethane, bromotrifluoromethane, perfluoroethane, and perfluoropropane can be used. The carbon raw materials listed above may be in a gaseous state, a solid state or a liquid state at room temperature, and when in a solid state or a liquid state, are used after being vaporized.

Next, the electrophotographic method of the present invention will be described. FIG. 4 is a schematic configuration diagram of an electrophotographic apparatus for carrying out the present invention, and the present invention is performed as follows. That is, the power supply 11 is provided on the surface of the photosensitive drum 10 having the photoconductive layer mainly composed of the amorphous silicon.
After being charged by the metal charger 12 to which a voltage has been applied, the image is exposed to light from an image input device 13 such as an original image, a laser, and an LED through an optical system to form an electrostatic latent image. The formed electrostatic latent image is visualized using a toner by the developing device 14 and is converted into a toner image. In this case, a magnetic brush method can be used for development. The formed toner image is transferred to a sheet 16 by a pressure transfer or an electrostatic transfer device 15. The toner remaining on the surface of the photoreceptor after the transfer is removed by a cleaner mechanism 17 using a blade, and the electric charge slightly remaining on the surface of the photoreceptor is erased by a static eliminator 18. The transferred toner image is fixed by the fixing device 19.

FIG. 5 is a schematic structural view of another electrophotographic apparatus. In this case, the metal charger 12 also functions as a cleaning blade. Also,
Transfer fixing is performed by applying pressure to the surface of the photoreceptor with the transfer fixing roll 20. In the case shown in this figure, the elements of the electrophotographic method are simplified, which is advantageous in terms of miniaturization and energy saving.

In the present invention, as the blade used for the metal charger, those made of various metals can be used, and among them, aluminum, iron, nickel, stainless steel, tungsten, molybdenum, titanium and the like can be used. Those can be preferably used. Further, even if the portion in contact with the electrophotographic photosensitive member is covered with amorphous silicon or amorphous carbon containing at least one element of carbon, nitrogen, oxygen, group III or group V and containing hydrogen and / or halogen. Good. In this case, even if there is a pinhole in the photoconductor, there is an effect of preventing a fluctuation in the power supply voltage due to the pinhole. Further, there is an effect of reducing abrasion of the metal blade. In the present invention, a voltage is externally applied to the metal charger. Generally, a voltage in the range of 50 to 2000 V can be adopted.

[0027]

Next, the present invention will be described in more detail with reference to examples and comparative examples. Example 1 As a support, a cylindrical substrate made of Al having a surface roughness of 4 mmR _max 0.05 μm was used, and a p-type charge injection blocking layer, a photoconductive layer, and two layers were formed thereon. An amorphous silicon photoreceptor was prepared in which a charge trap layer made of SiN _{x having a} total thickness of 0.5 μm and a p-type charge injection layer having a thickness of 2 μm were sequentially provided.

The inside of the reactor is sufficiently evacuated, and then a mixed gas of silane gas, hydrogen gas and diborane gas is introduced and glow discharge decomposition is performed to form a charge injection preventing layer having a thickness of 2 μm on the cylindrical substrate. Was formed. The film forming conditions at that time were as follows. 100% silane gas: 180cm ³ / min 100% hydrogen gas flow rate: 90cm ³ / min 200ppm hydrogen dilution diborane flow rate: 90cm ³ /
min Reactor internal pressure: 1.0 Torr Discharge power: 200 W Discharge time: 60 min Discharge frequency: 13.56 MHz Support temperature: 250 ° C. (In the following, the discharge frequency and the support temperature under the production conditions of each layer are as described above. Fixed to.)

After the formation of the charge injection blocking layer, the inside of the reactor is sufficiently evacuated, and then a mixture of silane gas, hydrogen gas and diborane gas is introduced to decompose by glow discharge. Then, a photoconductive layer having a thickness of 20 μm was formed. The film forming conditions at that time were as follows. 100% silane gas flow rate: 180 cm ³ / min 100% hydrogen gas flow rate: 162 cm ³ / min 20 ppm hydrogen diluted diborane gas flow rate: 18 cm ³ / m
in Reactor internal pressure: 1.0 Torr Discharge power: 300 W Discharge time: 200 min

After the formation of the photoconductive layer, the inside of the reactor is sufficiently evacuated, and then a mixture of silane gas, hydrogen gas and ammonia gas is introduced, and glow discharge decomposition is performed, so that the surface of the photoconductive layer is Then, a first charge trap layer having a thickness of 0.15 μm was formed. The film forming conditions at that time were as follows. 100% silane gas flow rate: 20 cm ³ / min 100% hydrogen gas flow rate: 180 cm ³ / min 100% ammonia gas flow rate: 30 cm ³ / min Reactor internal pressure: 0.5 Torr Discharge power: 50 W Discharge time: 30 min

After the formation of the first charge trapping layer, the inside of the reactor is sufficiently evacuated, and then a mixture of silane gas, hydrogen gas and ammonia gas is introduced to decompose the first charge trap layer by glow discharge. A second charge trapping layer having a thickness of 0.25 μm was formed on the charge trapping layer. The film forming conditions at that time were as follows. 100% silane gas flow rate: 24 cm ³ / min 100% hydrogen gas flow rate: 180 cm ³ / min 100% ammonia gas flow rate: 36 cm ³ / min Reactor internal pressure: 0.5 Torr Discharge power: 50 W Discharge time: 40 min

After the formation of the second intermediate layer, the inside of the reactor is sufficiently evacuated, and then a mixture of silane gas, hydrogen gas and siborane gas is introduced and glow discharge decomposition is performed to thereby form a second charge trap. A charge injection layer having a thickness of 0.1 μm was formed on the layer. The film forming conditions at that time were as follows. 100% silane gas flow rate: 180 cm ³ / min 100% hydrogen gas flow rate: 90 cm ³ / min 200% ppm hydrogen diluted siborane gas flow rate: 150 cm
³ / min Reactor internal pressure: 1.0 Torr Discharge power: 200 W Discharge time: 20 min

The electrophotographic photosensitive member produced as described above was incorporated into a printer shown in FIG.
An image was prepared on one sheet. As the metal charger No. 12, a 0.5 mm-thick steel blade having a polished tip was used, and a voltage of 400 V was applied thereto. Magnetic brush development was performed using a one-component developer.
The obtained image was clear and no fog was observed.

Example 2 An n-type charge injection blocking layer, a photoconductive layer, a 0.1 μm-thick p-type charge trap layer, and a 1 μm-thick n-type charge were formed on the same support as in Example 1. An amorphous silicon photosensitive member provided with an injection layer in order was manufactured. The film forming conditions at that time were as follows. 100% silane gas flow rate: 20 cm ³ / min 100% hydrogen gas flow rate: 180 cm ³ / min 100% ammonia gas flow rate: 20 cm ³ / min Reactor internal pressure: 0.5 Torr Discharge power: 50 W Discharge time: 30 min

After the formation of the charge injection blocking layer, the inside of the reactor is sufficiently evacuated, and then a mixture of silane gas, hydrogen gas and diborane gas is introduced to decompose by glow discharge. Then, a photoconductive layer having a thickness of 20 μm was formed. The film forming conditions at that time were as follows. 100% silane gas flow rate: 180 cm ³ / min 100% hydrogen gas flow rate: 162 cm ³ / min 20 ppm hydrogen diluted diborane gas flow rate: 18 cm ³ / m
in Reactor internal pressure: 1.0 Torr Discharge power: 300 W Discharge time: 200 min

After the formation of the photoconductive layer, the inside of the reactor is sufficiently evacuated, and then a mixture of silane gas, hydrogen gas, and ammonia gas is introduced and glow discharge decomposition is performed, so that the surface of the photoconductive layer is decomposed. A charge trap layer having a thickness of 1 μm was formed. The film forming conditions at that time were as follows. 100% silane gas flow rate: 180 cm ³ / min 200 ppm hydrogen diluted sivoran gas flow rate: 180 cm ³
/ Min Reactor internal pressure: 1.0 Torr Discharge power: 200 W Discharge time: 10 min

Next, a charge injection layer having a thickness of 1.0 μm was formed on the photoconductive layer by introducing a mixture of silane gas, hydrogen gas, and ammonia gas and performing glow discharge decomposition. The film forming conditions at that time were as follows. 100% silane gas flow rate: 40 cm ³ / min 100% hydrogen gas flow rate: 180 cm ³ / min 100% ammonia gas flow rate: 20 cm ³ / min Reactor internal pressure: 0.5 Torr Discharge power: 50 W Discharge time: 30 min

Using this electrophotographic photoreceptor, an image test was performed in the same manner as in Example 1 except that the voltage applied to the metal charger was -400 V and the polarity of the developer was changed. The obtained image was clear and no fog was observed.

Example 3 The same electrophotographic photosensitive member as in Example 2 was incorporated into a printer having the structure shown in FIG. 5, and an image was produced at 40 sheets per minute. The same steel blade as in Example 1 was used as a metal charger and cleaner. -400V for metal charger
Was applied. As a result of an image test on 100,000 sheets, no toner or additives were found to adhere to the surface of the photoreceptor, and the charge was stable. The obtained image was clear.

[0040]

As described above, the electrophotographic photoreceptor of the present invention is provided on the photoconductive layer made of amorphous silicon as described above.
It is provided with a charge trapping layer and a charge injection layer having specific compositions, and a high quality print free from image blur even at high humidity can be obtained by a contact charging method using a metal charger. The electrophotographic method using the electrophotographic photoreceptor of the present invention does not generate ozone, has high reliability, is suitable for high speed, and has a long life. Also, to simplify the elements of conventional xerography, it is possible to realize a compact energy saving.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view of an example of the electrophotographic photosensitive member of the present invention.

FIG. 2 is a schematic sectional view of another example of the electrophotographic photosensitive member of the present invention.

FIG. 3 is a schematic sectional view of another example of the electrophotographic photosensitive member of the present invention.

FIG. 4 is a schematic configuration diagram of an example of an electrophotographic apparatus for carrying out the present invention.

FIG. 5 is a schematic configuration diagram of another example of an electrophotographic apparatus for carrying out the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Conductive support, 2 ... Photoconductive layer, 3 ... Charge trap layer, 4 ... Charge injection layer, 5 ... Charge injection blocking layer, 6 ... Auxiliary layer, 10 ... Photoconductor drum, 11 ... Power supply, 12 ... Metal Charger, 13 image input device, 14 developing device, 15 electrostatic transfer device, 16 paper, 17 cleaner mechanism, 18 static eliminator, 19 fixing device, 20 transfer fixing roll.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI G03G 5/08 331 G03G 5/08 331 333 333 334 334 334 335 335 335 336 336 15/02 101 15/02 101 (56) References Special features JP-A-2-173657 (JP, A) JP-A-62-28758 (JP, A) JP-A-1-321440 (JP, A) JP-A-60-112048 (JP, A) JP-A-60-147756 (JP, A) JP, A) (58) Field surveyed (Int. Cl. ⁶ , DB name) G03G 5/08 301

Claims (9)

(57) [Claims] 1. An electrophotographic photoreceptor having at least a photoconductive layer made of amorphous silicon provided on a conductive substrate, wherein charge injection for injecting a charge having the same polarity as the charged polarity onto the photoconductive layer. a charge trapping layer to layer and trapping the charge, Ri Na provided in the order of the charge trapping layer and a charge injection layer, the less charge injection layer
Also amorphous silicon or aluminum containing group III elements
Made of Rufus carbon, and the charge trapping layer
At least one member selected from the group consisting of silicon, oxygen and a group V element
Amorphous silicon or amorphous containing species
Positive charging characteristics, characterized by being made of carbon
Electrophotographic photosensitive member is. 2. The electrophotographic photosensitive member according to claim 1, wherein a charge injection blocking layer for blocking injection of a charge having a polarity opposite to the charging polarity is provided between the conductive substrate and the photoconductive layer. body. 3. A group III film between a conductive substrate and a photoconductive layer.
At least one of the elements and / or carbon, nitrogen and
Amorph containing at least one selected from oxygen
Charge made of silicon or amorphous carbon
2. The electrode according to claim 1, further comprising an injection blocking layer.
Child photoreceptor. 4. An electrophoretic display comprising at least an amorph
Electrophotographic photoreceptor provided with photoconductive layer made of silicon
In the above, a charge having the same polarity as the charging polarity is formed on the photoconductive layer.
Charge injection layer for injecting and trapping the charge
Charge trapping layer and
Will be provided in the order of the charge injection layer, the charge injection layer is made of amorphous silicon or amorphous carbon including at least a group V element, the charge trapping layer is carbon, nitrogen, at least one member selected from oxygen and the group III element amorphous silicon or electrostatic charging polarity, characterized in that an amorphous carbon Ru negatively charged der child photoreceptor contains. 5. A band electrode between a conductive substrate and a photoconductive layer.
Charge injection blocking layer that blocks charge injection of the opposite polarity
5. The electrophotographic photosensitive apparatus according to claim 4, further comprising:
body. 6. A charge injection block made of amorphous silicon or amorphous carbon containing at least one group V element and / or at least one selected from carbon, nitrogen and oxygen between a conductive substrate and a photoconductive layer. The electrophotographic photosensitive member according to claim 4, wherein a layer is provided. 7. An electrophotographic method comprising the steps of charging, imagewise exposing, developing and fixing the electrophotographic photosensitive member according to claim 1 or 4, wherein a metal charger is brought into contact with the surface of the electrophotographic photosensitive member. And an electric charge is supplied from the outside to charge the toner. 8. A portion of the metal charger in contact with the electrophotographic photoreceptor is formed of carbon, nitrogen, oxygen, group III and V
The electrophotographic method according to claim 7, wherein the electrophotographic method includes at least one element selected from group III elements and is coated with amorphous silicon or amorphous carbon containing hydrogen and / or halogen. 9. The electrophotographic method according to claim 7, wherein the metal charger is a cleaning blade.