JP2933463B2 - Ceramic multilayer wiring board and method of manufacturing the same - Google Patents
Ceramic multilayer wiring board and method of manufacturing the sameInfo
- Publication number
- JP2933463B2 JP2933463B2 JP5125632A JP12563293A JP2933463B2 JP 2933463 B2 JP2933463 B2 JP 2933463B2 JP 5125632 A JP5125632 A JP 5125632A JP 12563293 A JP12563293 A JP 12563293A JP 2933463 B2 JP2933463 B2 JP 2933463B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- ceramic
- holes
- multilayer wiring
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004020 conductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 239000011148 porous material Substances 0.000 claims description 4
- 239000002923 metal particle Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 239000004793 Polystyrene Substances 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 239000012671 ceramic insulating material Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Conductive Materials (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、LSI素子を実装する
導体ペーストを用いたセラミック多層配線基板、及びそ
の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to mounting an LSI device.
The present invention relates to a ceramic multilayer wiring board using a conductive paste and a method for manufacturing the same.
【0002】[0002]
【従来の技術】多層セラミック配線基板は、主に以下の
2通りの方法で製造される。つまり、第一はセラミック
をシート上に成形し、これに配線パターンを形成した後
に、多層化して焼成する方法、第二はベースとなる焼成
したセラミック基板上に導体と絶縁体を交互に印刷し、
焼成する方法である。いずれの製法においても、各層の
信号線を接続するための導通孔であるビアホールを形成
する必要がある。2. Description of the Related Art A multilayer ceramic wiring board is mainly manufactured by the following two methods. In other words, first, a ceramic is formed on a sheet, a wiring pattern is formed on the sheet, and then multilayered and fired. Second, a conductor and an insulator are alternately printed on a fired ceramic substrate as a base. ,
This is a firing method. In any of the manufacturing methods, it is necessary to form a via hole as a conduction hole for connecting the signal lines of each layer.
【0003】ビアホール用導体は一般にシートあるいは
絶縁層に形成されたスルーホールに金属ペーストを埋め
込み、焼成することで得られる。このペーストには、金
属粉や有機ビヒクル(バインダー、溶剤等)以下に、ガ
ラス粉末等の無機組成物が添加されていることが多く、
セラミック絶縁層との収縮整合や密着性向上が図られて
いる。即ち、金属粉とセラミック粉の熱収縮挙動は一般
に異なるため、金属粉の焼結を促進あるいは遅延させる
ことで、できるだけ一致させると共に、焼成時に基板と
ビアホール導体間の界面に固化して、その密着性を強化
する働きを無機組成物に持たせている。A conductor for a via hole is generally obtained by embedding a metal paste in a through hole formed in a sheet or an insulating layer and firing the paste. In many cases, an inorganic composition such as a glass powder is added to the paste below a metal powder or an organic vehicle (binder, solvent, etc.).
The shrinkage matching with the ceramic insulating layer and the improvement in adhesion are achieved. That is, since the heat shrinkage behavior of the metal powder and the ceramic powder is generally different, the sintering of the metal powder is promoted or delayed so as to match as much as possible. The function of enhancing the properties is imparted to the inorganic composition.
【0004】[0004]
【発明が解決しようとする課題】しかし、前記のような
ビアホール導体と基板の収縮整合を図り、なおかつ密着
性がよい基板であっても、焼成あるいは熱処理を行う
と、ビアホールとそれを囲むセラミック絶縁層との境界
にクラックが発生し(図2)、信頼性を損なうケースが
しばしば見られる。このクラックは、焼成により、高温
でビアホール導体とセラミック絶縁層が結合すると、室
温時までの冷却時に材料間の熱膨張係数や弾性定数のミ
スマッチ等により発生する残留ストレスが引っ張り応力
として基板に直接かかり、強度的にもたないために発生
する。一般に、金属とセラミックには熱膨張係数に差が
あり、その差が大きいほど、クラックは発生しやすい。
よって、熱膨張係数差をいかに縮めるかが非常に重要で
ある。熱膨張係数制御は、添加物によって行われるが、
逆に他の特性への影響が大きい。例えば、銀に熱膨張係
数が3.5ppm/℃の無機組成物を10重量%添加し
ても、熱膨張係数は19ppm/℃から15ppm/℃
までしか低減できないが、導体抵抗は2μΩ・cmから
4μΩ・cmにまで増加してしまう。更に、熱膨張係数
差を縮めるにはかなり抵抗値を犠牲にしなければならな
い。However, even if the via-hole conductor and the substrate are shrink-matched and the substrate has good adhesion as described above, if the substrate is fired or heat-treated, the via-hole and the ceramic insulating material surrounding the via-hole will not be obtained. In many cases, cracks occur at the boundary with the layer (FIG. 2) and the reliability is impaired. When the via-hole conductor and the ceramic insulating layer are bonded at a high temperature by baking, residual stress generated due to mismatch of thermal expansion coefficient or elastic constant between materials when cooled to room temperature is directly applied to the substrate as tensile stress. This is caused by the lack of strength. Generally, there is a difference in the coefficient of thermal expansion between a metal and a ceramic, and the larger the difference is, the more easily cracks occur.
Therefore, it is very important how to reduce the difference in thermal expansion coefficient. Thermal expansion coefficient control is performed by additives,
Conversely, the effect on other characteristics is large. For example, even if 10% by weight of an inorganic composition having a coefficient of thermal expansion of 3.5 ppm / ° C. is added to silver, the coefficient of thermal expansion is from 19 ppm / ° C. to 15 ppm / ° C.
However, the conductor resistance increases from 2 μΩ · cm to 4 μΩ · cm. Further, to reduce the difference in the coefficient of thermal expansion, the resistance value must be significantly sacrificed.
【0005】以上述べたマイクロクラックの発生の問題
はビアホール形成時のみならず導体とセラミックを積層
する時にも当然起こる問題であり、この問題を解決する
ために、空孔を有する銅基合金部材とセラミックとを接
合することでマイクロクラックの発生を防止する方法が
考案されている(特開昭63−179734号公報)。
これは、10体積%以下の空孔率を有する銅基焼結合金
部材を粉末治金法にて作成し、セラミック基板と接合す
ることにより応力緩和効果を空孔に持たすものである。
しかし、基板の小型化にともないビアホールも微細化
し、この技術をビアホール形成に利用することは極めて
困難であった。ビアホールの導体層に空洞を形成する方
法も開示されていたが(特開昭61−23393号公
報)、これはクラックの発生は制御されるものの抵抗値
が増大し、実用には値しないものであった。[0005] The above-mentioned problem of the occurrence of microcracks naturally occurs not only when forming via holes but also when laminating a conductor and ceramic. To solve this problem, a copper-based alloy member having holes must be used. A method for preventing the occurrence of microcracks by bonding with ceramic has been devised (Japanese Patent Application Laid-Open No. 63-179733).
In this method, a copper-based sintered alloy member having a porosity of 10% by volume or less is prepared by a powder metallurgy method, and is joined to a ceramic substrate so that the pores have a stress relaxation effect.
However, as the size of the substrate is reduced, the size of the via hole is reduced, and it has been extremely difficult to use this technique for forming the via hole. A method of forming a cavity in a conductor layer of a via hole has also been disclosed (Japanese Patent Application Laid-Open No. 61-23393). However, this method is not practical in that cracks are controlled, but the resistance value is increased. there were.
【0006】本発明の目的は、前記問題を鑑み、特にビ
アホール周辺に発生するクラックを防止することを目的
とした導体ペーストを用いたセラミック多層配線基板、
及びその製造方法を提供することにある。In view of the above problems, it is an object of the present invention to provide a ceramic multilayer wiring board using a conductive paste for preventing cracks particularly occurring around via holes.
And a method for manufacturing the same.
【0007】[0007]
【課題を解決するための手段】本発明は、金属粒子と、
有機ビヒクルと、ペースト全量の10vol%以上30
vol%以下でかつ固体樹脂より成る空孔形成材より成
ることを特徴とするセラミック配線基板用導体ペースト
を用いたセラミック多層配線基板の製造方法であり、ま
たビアホール中に、互いに独立しかつ外部とのつながり
のない空孔を有することを特徴とするセラミック多層配
線基板である。SUMMARY OF THE INVENTION The present invention comprises a metal particle,
Organic vehicle and 10 vol% or more of total paste 30
A conductor paste for a ceramic wiring board, comprising a pore forming material of not more than vol% and made of a solid resin.
This is a method of manufacturing a ceramic multilayer wiring board using
Independent and external connections during open via holes
Ceramic multilayer arrangement characterized by having voids free
It is a line substrate .
【0008】本発明は発生する残留引っ張り応力を低減
することよりも応力を緩和することに重点をおいてなさ
れたものであり、導体金属を塑性変形させるために、導
体金属内に均一な空孔を形成可能にしたものである。The present invention has been made with an emphasis on relieving stress rather than reducing the generated residual tensile stress. In order to plastically deform the conductor metal, uniform voids are formed in the conductor metal. Can be formed.
【0009】空孔形成材としては、ポリスチレン、ポリ
メチルメタクリレート、ポリエチレン等が用いられる。
又、その量がペースト全体の30vol%を超えると、
空孔の連結が起こり信頼性が急激に低下すると共に抵抗
値も大幅に増大してしまうため、添加量は30vol%
以下に限定した。As the pore forming material, polystyrene, polymethyl methacrylate, polyethylene or the like is used.
When the amount exceeds 30 vol% of the whole paste,
Since the connection of vacancies is caused and the reliability sharply decreases and the resistance value greatly increases, the addition amount is 30 vol%.
Limited to the following.
【0010】[0010]
【実施例】以下に、本発明の実施例によって詳細に説明
する。ただし、本発明はその要旨を超えない限りは以下
の実施例に限定されるものではない。Embodiments of the present invention will be described below in detail. However, the present invention is not limited to the following examples unless it exceeds the gist.
【0011】ビアホール用導体金属として銀を、空孔形
成材としてポリスチレン(粒径1〜40μm)、金属粒
子として銀を適用した場合について述べる。A case will be described in which silver is used as a conductor metal for via holes, polystyrene (particle diameter: 1 to 40 μm) is used as a pore-forming material, and silver is used as metal particles.
【0012】銀と有機ビヒクルとの比率を84/16
(重量%)程度となるように混合し、更に銀粒子に対し
て、表1に示したように0〜60体積%の空孔形成材を
添加した。このとき導電ペーストの粘度は適度なビアフ
ィル量が達成できるように、100〜500kcp程度
に調整される。The ratio of silver to organic vehicle is 84/16
(% By weight), and 0 to 60% by volume of a pore-forming material was added to the silver particles as shown in Table 1. At this time, the viscosity of the conductive paste is adjusted to about 100 to 500 kcp so that an appropriate via fill amount can be achieved.
【0013】次にこの導体ペーストを、グリーンシート
中のスルーホール内に充填して積層し、焼成を行った。
図1(a)にビアホールの断面図、図1(b)に、ビア
ホールを上方からみた図を示す。ペーストの応力緩和性
が明かとなるように、絶縁材料には強度が100MPa
程度と低い石英ガラスとホウ系酸ガラスの混合物を使用
した。Next, this conductive paste was filled in the through holes in the green sheet, laminated, and fired.
FIG. 1A is a sectional view of a via hole, and FIG. 1B is a view of the via hole as viewed from above. The insulating material has a strength of 100 MPa so that the stress relaxation property of the paste becomes clear.
A mixture of quartz glass and borate glass having a low degree was used.
【0014】焼成後、導体の抵抗値(比抵抗に換
算)、クラック発生頻度、導体とセラミック間の隙
間発生度、導体焼結性(液体の染み込み具合)の4点
で評価を行った。については、短冊状のパターンを印
刷・焼成し、抵抗値、線幅、厚みから求めた。、に
ついては、光学顕微鏡やSEM観察により判定した。
については、赤インク中に基板を浸した後に、断面を観
察しインクの染み込み状態から判定した。〜は、そ
れぞれのサンプルの50点を測定点として行った。結果
を、表1に示す。After firing, evaluation was made on four points: the resistance value of the conductor (in terms of specific resistance), the frequency of occurrence of cracks, the degree of occurrence of gaps between the conductor and the ceramic, and the sinterability of the conductor (the degree of liquid penetration). Was determined by printing and baking a strip-shaped pattern, and using the resistance value, line width, and thickness. Was determined by an optical microscope or SEM observation.
For, after the substrate was immersed in red ink, the cross section was observed and judged from the state of ink penetration. Was performed using 50 points of each sample as measurement points. Table 1 shows the results.
【0015】ポリスチレンを添加しない通常のペースト
では、比抵抗が1.8μΩ・cmと極めて低く、隙間や
染み込みは全く発生しないが、クラックが全てのスルー
ホール回りに発生してしまう。ところが、10vol%
のポリスチレンをペースト内に添加すると、クラックは
25%の発生頻度まで抑制できる。更に、20vol%
を越えると、全く発生しなくなる。このようにスルーホ
ール用導体金属内に空孔を形成すると、クラックは完全
に抑制できる。一方、抵抗値の極端な上昇や信頼性の低
下が懸念されるが、添加量が30vol%までであれ
ば、全く問題ない。これは各空孔が互いに独立して存在
し、外部とつながっていないためと考えられる。しかし
40vol%を越えると、空孔同士がつながってしま
い、極端に特性が劣化する。以上のことから、ポリスチ
レン微粒子を空孔形成材として用いた場合、30vol
%以下の添加量で信頼性や低抵抗を維持しながらクラッ
クを制御する効果が認められた。[0015] In a normal paste without the addition of polystyrene, the specific resistance is as low as 1.8 µΩ · cm, and no gaps or seepage occur at all, but cracks occur around all the through holes. However, 10 vol%
When polystyrene is added to the paste, cracks can be suppressed to a frequency of 25%. In addition, 20 vol%
When it exceeds, it does not occur at all. When the holes are formed in the conductor metal for through holes, cracks can be completely suppressed. On the other hand, an extreme increase in the resistance value or a decrease in the reliability may be a concern, but there is no problem if the addition amount is up to 30 vol%. This is presumably because the holes exist independently of each other and are not connected to the outside. However, if it exceeds 40 vol%, the holes are connected to each other, and the characteristics are extremely deteriorated. From the above, when polystyrene fine particles were used as the pore-forming material , 30 vol.
%, The effect of controlling cracks while maintaining reliability and low resistance was recognized.
【0016】[0016]
【表1】 [Table 1]
【0017】以上、空孔形成材としてポリスチレンを用
いた場合のみ示したが、他の空孔形成材でも同様な結果
が得られることは言うまでもなく、又、ビアホールの形
成のみならず積層用導体としても用いることが可能であ
る。Although only the case where polystyrene is used as the hole forming material has been described above, it is needless to say that similar results can be obtained with other hole forming materials. Can also be used.
【0018】[0018]
【発明の効果】以上説明したように、本発明のセラミッ
ク配線基板の製造方法により、比抵抗や高信頼性を維持
しながら、焼成・熱処理後に金属・絶縁体の界面にマイ
クロクラックの発生を防止することが可能となる。As described above, the ceramic of the present invention
According to the method for manufacturing a wiring substrate, it is possible to prevent the occurrence of microcracks at the interface between a metal and an insulator after firing and heat treatment, while maintaining specific resistance and high reliability.
【図1】本発明のセラミック配線基板におけるビアホー
ルの図である。FIG. 1 is a diagram showing a via hole in a ceramic wiring board of the present invention.
It is a view of Le.
【図2】従来の導体ペーストを用いた場合のビアホール
の図である。FIG. 2 is a view of a via hole when a conventional conductive paste is used.
1 セラミック 2 導体金属 3 空孔 4 マイクロクラック Reference Signs List 1 ceramic 2 conductive metal 3 void 4 micro crack
フロントページの続き (56)参考文献 特開 平4−225297(JP,A) 特開 平3−138806(JP,A) 特開 平2−25094(JP,A)Continuation of front page (56) References JP-A-4-225297 (JP, A) JP-A-3-138806 (JP, A) JP-A-2-25094 (JP, A)
Claims (2)
介して積層されているセラミック多層配線基板におい
て、前記ビアホール中に、互いに独立しかつ外部とのつ
ながりのない空孔を有することを特徴とするセラミック
多層配線基板。1. A ceramic multilayer wiring board in which a plurality of ceramic wiring boards are stacked via via holes, wherein the via holes have holes which are independent of each other and have no connection to the outside. Multilayer wiring board.
ル内に、金属粒子と、有機ビヒクルと、ペースト全量の
10vol%以上30vol%以下でかつ固体樹脂より
成る空孔形成材より成るセラミック配線基板用導体ペー
ストを充填し、これを複数積層した後、前記空孔形成材
を消失できる温度で熱処理を行い、前記ビアホール中に
互いに独立しかつ外部とのつながりのない空孔を形成す
ることを特徴とするセラミック多層配線基板の製造方
法。2. A ceramic wiring board conductor comprising a metal particle, an organic vehicle, and a pore forming material comprising 10 vol% to 30 vol% of the total amount of paste and a solid resin in a via hole provided in the ceramic wiring board. After filling the paste and laminating a plurality of the pastes, a heat treatment is performed at a temperature at which the hole forming material can be eliminated, so that holes independent of each other and having no connection to the outside are formed in the via holes. A method for manufacturing a ceramic multilayer wiring board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5125632A JP2933463B2 (en) | 1993-05-27 | 1993-05-27 | Ceramic multilayer wiring board and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5125632A JP2933463B2 (en) | 1993-05-27 | 1993-05-27 | Ceramic multilayer wiring board and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06338214A JPH06338214A (en) | 1994-12-06 |
| JP2933463B2 true JP2933463B2 (en) | 1999-08-16 |
Family
ID=14914852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5125632A Expired - Lifetime JP2933463B2 (en) | 1993-05-27 | 1993-05-27 | Ceramic multilayer wiring board and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2933463B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007139995A (en) * | 2005-11-17 | 2007-06-07 | Hitachi Displays Ltd | Display device and manufacturing method thereof |
| JP5848901B2 (en) * | 2010-08-26 | 2016-01-27 | 京セラ株式会社 | Wiring board |
| JP5556966B2 (en) * | 2011-08-08 | 2014-07-23 | パナソニック株式会社 | Piezoelectric element |
| US9689748B2 (en) | 2011-08-08 | 2017-06-27 | Panasonic Corporation | Infrared detection element |
| JP6336829B2 (en) * | 2014-06-19 | 2018-06-06 | 京セラ株式会社 | Wiring board, package and electronic equipment |
| WO2020110987A1 (en) * | 2018-11-28 | 2020-06-04 | 京セラ株式会社 | Planar coil, and transformer, wireless power transmitter, and electromagnet provided with same |
| JP7771664B2 (en) * | 2021-11-22 | 2025-11-18 | セイコーエプソン株式会社 | Electronic device and method for manufacturing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0225094A (en) * | 1988-07-13 | 1990-01-26 | Taiyo Yuden Co Ltd | Manufacture of ceramic multilayer wiring board |
| JPH03138806A (en) * | 1989-10-24 | 1991-06-13 | Narumi China Corp | Conductive paste for filling and multi-layer wiring substrate |
-
1993
- 1993-05-27 JP JP5125632A patent/JP2933463B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06338214A (en) | 1994-12-06 |
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| Date | Code | Title | Description |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19960611 |