JP2934735B2 - Electro-optical device - Google Patents
Electro-optical deviceInfo
- Publication number
- JP2934735B2 JP2934735B2 JP12099990A JP12099990A JP2934735B2 JP 2934735 B2 JP2934735 B2 JP 2934735B2 JP 12099990 A JP12099990 A JP 12099990A JP 12099990 A JP12099990 A JP 12099990A JP 2934735 B2 JP2934735 B2 JP 2934735B2
- Authority
- JP
- Japan
- Prior art keywords
- linear resistance
- resistance film
- film
- conductor
- electro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 claims description 19
- 239000004973 liquid crystal related substance Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 238000005036 potential barrier Methods 0.000 claims description 6
- 238000005381 potential energy Methods 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004012 SiCx Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、表示装置、光シャッター、プロジェクタ表
示装置などに関する。The present invention relates to a display device, an optical shutter, a projector display device, and the like.
本発明は、非線形抵抗素子を液晶と直列に形成したア
クティブマトリックス電気光学装置に関し、特に非線形
抵抗膜を３層積層構造にすることにより、電気特性の対
称性を改善し、フリッカーのない見易い電気光学装置を
提供するものである。The present invention relates to an active matrix electro-optical device in which a non-linear resistance element is formed in series with a liquid crystal, and in particular, a three-layered non-linear resistance film is used to improve the symmetry of electric characteristics, and to provide a flicker-free electro-optical device. An apparatus is provided.
第３図（ａ）は、従来公知である２端子非線形抵抗素
子を使った電気光学装置の素子部基板断面図である。30
は基板、31は画素透明電極、32は非線形抵抗膜、33は金
属電極である。非線形抵抗素子は金属電極、非線形抵抗
膜、画素電極が重なった部分である。非線形抵抗素子は
金属−絶縁膜−金属構造のMIM形ダイオード、SiNx,SiCx
などの半絶縁性膜を用いたダイオードを使用する。FIG. 3A is a sectional view of an element substrate of an electro-optical device using a conventionally known two-terminal nonlinear resistance element. 30
Is a substrate, 31 is a pixel transparent electrode, 32 is a non-linear resistance film, and 33 is a metal electrode. The nonlinear resistance element is a portion where a metal electrode, a nonlinear resistance film, and a pixel electrode overlap. Non-linear resistance element is MIM type diode with metal-insulating film-metal structure, SiNx, SiCx
For example, a diode using a semi-insulating film is used.
第３図（ｂ）は、従来公知である第３図（ａ）構造の
非線形抵抗素子の電流−電圧特性を示すグラフであり、
正と負の同一電圧に対する電流値が異なり、そのために
交流駆動を行うと、液晶層に印加される実効電圧が極性
によって差が生じた。その結果、フリッカー現象が発生
し、見ずらい電気光学装置となる問題があった。FIG. 3B is a graph showing current-voltage characteristics of a conventionally known nonlinear resistance element having the structure of FIG.
The current values for the same positive and negative voltages are different. Therefore, when AC driving is performed, a difference occurs in the effective voltage applied to the liquid crystal layer depending on the polarity. As a result, a flicker phenomenon occurs, and there is a problem that the electro-optical device is difficult to see.
上記非対称特性の原因は第３図（ａ）透明電極31と非
線形抵抗膜32との間、また金属電極33と非線形抵抗膜32
との間のショットキー電位差に起因する。この問題を解
決するために、前記上下の導体と非線形抵抗膜の間に、
界面電位障壁の高い薄膜を形成して、対称な電流−電圧
特性を持つ非線形抵抗素子を得る。The causes of the asymmetric characteristic are shown in FIG. 3 (a) between the transparent electrode 31 and the nonlinear resistance film 32, and between the metal electrode 33 and the nonlinear resistance film 32.
And a Schottky potential difference between them. In order to solve this problem, between the upper and lower conductors and the nonlinear resistance film,
By forming a thin film having a high interface potential barrier, a non-linear resistance element having symmetric current-voltage characteristics is obtained.
導体と非線形抵抗膜間に電位障壁の高い薄膜を形成し
て、対称な電気特性をもつ非線形抵抗素子にすることに
より、対称な交流電圧が液晶に印加されるようにして、
フリッカーのない見易い電気光学装置を得ることができ
る。By forming a thin film with a high potential barrier between the conductor and the non-linear resistance film to make a non-linear resistance element with symmetrical electrical characteristics, a symmetrical AC voltage is applied to the liquid crystal,
An easy-to-see electro-optical device without flicker can be obtained.
第１図は本発明による電気光学装置の一実施例を示す
縦断面図である。下側基板１と上側基板２の間に液晶３
が封入されている。下側基板上には、画素電極である導
体4,非線形抵抗膜9,走査または信号電極である導体5,液
晶分子を配向するための配向膜10が形成される。上側基
板上には信号または走査電極11と配向膜12が形成されて
いる．非線形抵抗素子は、導体4,非線形抵抗膜9,導体５
の積層部であり、非線形抵抗膜９は３層構造を有する。
第２図は、第１図３層構造非線形抵抗膜９の電子ポテン
シャルエネルギーを実現した図であり、非線形抵抗膜a6
と非線形抵抗膜c6の電導帯レベルは、非線形抵抗膜b7の
電導帯レベルよりも高い。導体４および５と、非線形抵
抗膜ａ及びｃとの電位障壁はそれぞれφ1,φ２であり、
非線形抵抗素子を対称な電気特性にするためには、φ１
とφ２が等しくなるように設定する。今、具体例とし
て、非線形抵抗膜をシリコン窒化膜SiNx,導体4,導体５
としてITO（インジウム、スズ酸化物）,Crをそれぞれ使
用する場合について述べる。この種の素子に用いられる
窒化膜SiNxのｘ値は通常0.45から0.7,膜厚はおよそ1000
Åであり、前記導体と組合せたときの電気特性の対称性
は約1.5ボルトであり、φ２が大きい。この電気特性の
非対称性は、非線形抵抗膜a6および非線形抵抗膜c8とし
て、ｘ値が1.0から1.3に設定したシリコン窒化膜を約10
Åから100Å連続的に形成することにより、解消するこ
とができた。なお、シリコン窒化膜はプラズマCVDやス
パッタによって作成した。FIG. 1 is a longitudinal sectional view showing an embodiment of the electro-optical device according to the present invention. Liquid crystal 3 between lower substrate 1 and upper substrate 2
Is enclosed. On the lower substrate, a conductor 4 serving as a pixel electrode, a nonlinear resistance film 9, a conductor 5 serving as a scanning or signal electrode, and an alignment film 10 for aligning liquid crystal molecules are formed. A signal or scanning electrode 11 and an alignment film 12 are formed on the upper substrate. The nonlinear resistance element is composed of a conductor 4, a nonlinear resistance film 9, and a conductor 5.
The nonlinear resistance film 9 has a three-layer structure.
FIG. 2 is a diagram showing the electron potential energy of the three-layer structure nonlinear resistance film 9 shown in FIG.
The conduction band level of the nonlinear resistance film c6 is higher than the conduction band level of the nonlinear resistance film b7. Potential barriers between the conductors 4 and 5 and the nonlinear resistance films a and c are φ1 and φ2, respectively.
To make the nonlinear resistance element have symmetrical electrical characteristics, φ1
And φ2 are set to be equal. Now, as a specific example, a nonlinear resistance film is formed of a silicon nitride film SiNx, a conductor 4, and a conductor 5.
The case of using ITO (indium, tin oxide) and Cr respectively will be described. The x value of the nitride film SiNx used for this type of device is usually 0.45 to 0.7, and the film thickness is about 1000
Å, the symmetry of the electrical characteristics when combined with the conductor is about 1.5 volts, and φ2 is large. The asymmetry of the electric characteristics is as follows. As the nonlinear resistance film a6 and the nonlinear resistance film c8, the silicon nitride film having the x value set from 1.0 to 1.3 is approximately 10%.
The problem could be solved by forming continuously from Å to 100Å. The silicon nitride film was formed by plasma CVD or sputtering.
本実施例では、非線形抵抗膜としてSiNx膜について説
明してきたが、これをシリコン酸化膜、シリコン炭化
膜、あるいはこれらの材料の組み合わせでもよい。ま
た、第１層、第３層非線形抵抗膜として、CrO,Al2O3，T
a2O5，などの金属酸化物や窒化膜を使用することができ
る。In the present embodiment, the SiNx film has been described as the non-linear resistance film, but this may be a silicon oxide film, a silicon carbide film, or a combination of these materials. In addition, CrO, Al 2 O 3 , T
Metal oxides such as a 2 O 5 and nitride films can be used.
以上述べてきたように、本発明の電気光学装置は、容
量と液晶と非線形抵抗素子が直列に接続し、非線形抵抗
素子の閾値特性が極性に対して非対称であっても、直列
接続した容量に液晶DCバイアス電圧が印加され、非線形
抵抗素子には対称性が自己補正された電圧が印加され、
その結果、液晶は対称な交流実効電圧駆動し、フリッカ
ーのない見易い電気光学装置を得ることができるという
優れた効果を有する。As described above, in the electro-optical device of the present invention, even when the capacitance, the liquid crystal, and the nonlinear resistance element are connected in series, and the threshold characteristic of the nonlinear resistance element is asymmetric with respect to the polarity, the capacitance is connected to the series-connected capacitance. A liquid crystal DC bias voltage is applied, and a voltage with self-corrected symmetry is applied to the nonlinear resistance element,
As a result, the liquid crystal is driven by a symmetrical AC effective voltage, and has an excellent effect that an electro-optical device which is easy to see without flicker can be obtained.
第１図は本発明による電気光学装置の縦断面図、第２図
は本発明による電気光学装置の非線形抵抗膜の電子ポテ
ンシャルエネルギーを示す図、第３図（ａ）は従来公知
の非線形抵抗素子の縦断面図、第３図（ｂ）は前記素子
の電流−電圧特性グラフをそれぞれ示すものである。 1,2……基板 ３……液晶 6,7,8,9……非線形抵抗膜 ４……画素電極 ５……金属電極FIG. 1 is a longitudinal sectional view of an electro-optical device according to the present invention, FIG. 2 is a diagram showing the electron potential energy of a nonlinear resistive film of the electro-optical device according to the present invention, and FIG. FIG. 3 (b) shows a current-voltage characteristic graph of the device. 1,2 ... substrate 3 ... liquid crystal 6,7,8,9 ... non-linear resistive film 4 ... pixel electrode 5 ... metal electrode
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平１−292319（ＪＰ，Ａ) 特開 昭63−229483（ＪＰ，Ａ) 特開 平２−168237（ＪＰ，Ａ) 特開 平２−168238（ＪＰ，Ａ) 特開 平２−168239（ＪＰ，Ａ) 特開 平２−170136（ＪＰ，Ａ) 特開 平２−198432（ＪＰ，Ａ) 特開 平３−67226（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) G02F 1/136 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-1-292319 (JP, A) JP-A-63-229483 (JP, A) JP-A-2-168237 (JP, A) JP-A-2-292 168238 (JP, A) JP-A-2-168239 (JP, A) JP-A-2-170136 (JP, A) JP-A-2-198432 (JP, A) JP-A-3-67226 (JP, A) (58) Field surveyed (Int.Cl. 6 , DB name) G02F 1/136
Claims (5)
間に液晶層を形成し、前記上下基板電極の交叉部に、液
晶と第１の導体と非線形抵抗膜と第２の導体の順からな
る非線形抵抗素子を単位とする画素を形成した電気光学
素子において、 前記非線型抵抗膜は、前記第１の導体上の非線型抵抗膜
ａと、前記非線型抵抗ａ上の非線型抵抗膜ｂと、前記非
線型抵抗ｂの前記非線型抵抗ａに向かい合う面と反対の
面上の非線型抵抗膜ｃとからなり、 前記非線型抵抗膜ａと前記非線形抵抗膜ｃは、前記非線
型抵抗膜ｂより電子の導電帯のポテンシャルエネルギー
が高く、かつ前記第１の導体と前記非線型抵抗膜ａとの
電位障壁φ１と、前記第２の導体と前記非線型抵抗膜ｃ
との電位障壁φ２とが等しい電気光学装置。1. A liquid crystal layer is formed between upper and lower substrates on which a large number of separated electrode groups are arranged, and a liquid crystal, a first conductor, a non-linear resistance film, and a second conductor are formed at intersections of the upper and lower substrate electrodes. In the electro-optical element in which a pixel is formed with a non-linear resistance element as a unit, the non-linear resistance film includes a non-linear resistance film a on the first conductor and a non-linear resistance on the non-linear resistance a. A non-linear resistance film c on the surface of the non-linear resistance b opposite to the surface facing the non-linear resistance a of the non-linear resistance b, wherein the non-linear resistance film a and the non-linear resistance film c are The potential energy of the conduction band of electrons is higher than that of the resistance film b, and the potential barrier φ1 between the first conductor and the non-linear resistance film a, and the second conductor and the non-linear resistance film c
Electro-optical device having the same potential barrier φ2 as
が、SiNxただし、ｘは1.0から1.3の範囲でかつ10Åから
100Åの膜厚を有する請求項１記載の電気光学装置。2. The non-linear resistance film a and the non-linear resistance film c.
Where SiNx, where x is in the range of 1.0 to 1.3 and 10Å
2. The electro-optical device according to claim 1, which has a thickness of 100 °.
0.45から0.7の範囲である請求項１記載の電気光学装
置。3. The non-linear resistance film b is made of SiNx, where x is
2. The electro-optical device according to claim 1, wherein the range is from 0.45 to 0.7.
が、CrO、Al2O3、Ta2O5からなる請求項１記載の電気光
学装置。4. The non-linear resistance film a and the non-linear resistance film c.
2. The electro-optical device according to claim 1, wherein the component comprises CrO, Al 2 O 3 , or Ta 2 O 5 .
間に液晶層を形成し、前記上下基板電極の交叉部に、液
晶と第１の導体と非線形抵抗膜と第２の導体の順からな
る非線形抵抗素子を単位とする画素を形成した電気光学
素子において、 前記第１の導体および前記第２の導体と、前記非線型抵
抗膜の間に前記非線型抵抗膜より界面電位障壁の高く、
かつ膜厚の薄い非線型抵抗膜を有し、膜厚方向に、交流
電圧で対称な電流−電圧特性を有する非線形抵抗素子を
有する電気光学装置。5. A liquid crystal layer is formed between an upper and lower substrate on which a large number of separated electrode groups are arranged, and a liquid crystal, a first conductor, a non-linear resistance film, and a second conductor are formed at an intersection of the upper and lower substrate electrodes. An electro-optical element in which a pixel is formed with a non-linear resistive element as a unit, wherein an interfacial potential barrier between the first conductor and the second conductor and the non-linear resistive film is higher than that of the non-linear resistive film. high,
An electro-optical device including a non-linear resistance film having a small thickness and a non-linear resistance element having a current-voltage characteristic symmetric with an AC voltage in a film thickness direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12099990A JP2934735B2 (en) | 1990-05-10 | 1990-05-10 | Electro-optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12099990A JP2934735B2 (en) | 1990-05-10 | 1990-05-10 | Electro-optical device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0416829A JPH0416829A (en) | 1992-01-21 |
| JP2934735B2 true JP2934735B2 (en) | 1999-08-16 |
Family
ID=14800277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12099990A Expired - Fee Related JP2934735B2 (en) | 1990-05-10 | 1990-05-10 | Electro-optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2934735B2 (en) |
-
1990
- 1990-05-10 JP JP12099990A patent/JP2934735B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0416829A (en) | 1992-01-21 |
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