JP2936057B2 - Organic PTC thermistor - Google Patents
Organic PTC thermistorInfo
- Publication number
- JP2936057B2 JP2936057B2 JP908496A JP908496A JP2936057B2 JP 2936057 B2 JP2936057 B2 JP 2936057B2 JP 908496 A JP908496 A JP 908496A JP 908496 A JP908496 A JP 908496A JP 2936057 B2 JP2936057 B2 JP 2936057B2
- Authority
- JP
- Japan
- Prior art keywords
- mesh
- metal
- organic
- ptc
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Thermistors And Varistors (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
【0001】[0001]
【産業上の利用分野】この発明は、有機質PTCサーミ
スタに関するもので、詳しくは自動車のドアロック用モ
ータ、電池などの過電流防止素子として使用することが
できる有機質PTCサーミスタに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic PTC thermistor, and more particularly, to an organic PTC thermistor which can be used as an overcurrent prevention element for a motor for door lock of an automobile, a battery and the like.
【0002】[0002]
【従来の技術】一般にポリエチレンやポリプロピレン等
の有機ポリマーにカーボンブラックや金属粉等の導電性
微粉末を分散させてなる導電性組成物は正抵抗温度特性
を示すことが知られている。このようなPTC組成物
は、例えば米国特許第3,591,526号明細書や米
国特許第3,673,121号明細書に開示されてい
る。さらに、これらのものに電極を形成する方法として
は、PTC組成物の表面に直接金属めっきを施す方法
(特公平4−44401号公報)、金属からなるメッシ
ュ状電極をPTC組成物に埋設する方法(特公平2−1
6002号公報)、スパッタリングによる方法(特開昭
62−85401号公報)等が知られている。2. Description of the Related Art It is generally known that a conductive composition obtained by dispersing a conductive fine powder such as carbon black or metal powder in an organic polymer such as polyethylene or polypropylene exhibits a positive resistance temperature characteristic. Such PTC compositions are disclosed, for example, in U.S. Pat. No. 3,591,526 and U.S. Pat. No. 3,673,121. Further, as a method of forming an electrode on these materials, a method of directly applying metal plating to the surface of the PTC composition (Japanese Patent Publication No. 4-44001), a method of embedding a mesh electrode made of metal in the PTC composition (Tokuhei 2-1
No. 6002) and a method by sputtering (Japanese Patent Application Laid-Open No. 62-85401) are known.
【0003】[0003]
【発明が解決しようとする課題】一般に、自動車のドア
ロック用モータ、電池などの過電流防止素子などに使用
されるPTCサーミスタとしては、室温比抵抗が1Ω・
cm以下、抵抗変化率(=log10(最大抵抗値/初
期抵抗値))が5以上であることが望ましい。その低抵
抗化のメリットとしては、形状の小型化が図れるばかり
でなく、通常時に大電流を使用することが可能になるこ
とがある。ここで、導電性物質量を増やしていくと抵抗
を下げることができるが、抵抗変化率が小さくなり、異
常時の電流遮断がしにくくなるという欠点があった。Generally, a PTC thermistor used for an overcurrent prevention element such as a motor for door lock of an automobile, a battery or the like has a room temperature specific resistance of 1Ω ·
cm or less, and the resistance change rate (= log10 (maximum resistance value / initial resistance value)) is desirably 5 or more. As an advantage of the low resistance, not only the size can be reduced, but also a large current can be used in normal times. Here, the resistance can be reduced by increasing the amount of the conductive substance, but there is a disadvantage that the resistance change rate becomes small, and it becomes difficult to interrupt the current when an abnormality occurs.
【0004】カーボンブラックを導電性物質として使用
した実用可能な有機質サーミスタでは、室温比抵抗が2
Ω・cm程度と大きくこれ以上の低抵抗化が難しく、大
電流用途には不向きであった。また、金属粉を導電性物
質として使用した場合には室温比抵抗は低くできるが、
on−off試験等の実負荷の耐久性が悪いという問題
があり、実用に耐えるものではなかった。A practical organic thermistor using carbon black as a conductive material has a room temperature specific resistance of 2%.
The resistance was as large as about Ω · cm, and it was difficult to lower the resistance further. Also, when metal powder is used as the conductive substance, the room temperature specific resistance can be lowered,
There is a problem that the durability of an actual load such as an on-off test is poor, and it is not practical.
【0005】図6に示すような従来例において、金属か
らなるメッシュ状電極をPTC組成物に埋設する方法で
は、PTC組成物素体形状の大きさの割りには抵抗値が
下がらなかったり、抵抗値が不安定であるという問題が
あった。一方、図7に示すような同じく従来例におい
て、電極形成方法としてPTC組成物の表面に直接金属
めっきを施す方法やスパッタリングによる方法をとる
と、PTC組成物素体の熱膨張収縮によって電極膜にシ
ワや亀裂が入ったり、素体から剥離するなどして抵抗値
が増大するという問題があった。In the conventional example as shown in FIG. 6, in a method of embedding a mesh electrode made of metal in a PTC composition, the resistance value does not decrease or the resistance value does not decrease depending on the size of the PTC composition body shape. There was a problem that the value was unstable. On the other hand, in the same conventional example as shown in FIG. 7, when a method of directly applying metal plating to the surface of the PTC composition or a method of sputtering is used as the electrode forming method, the thermal expansion and contraction of the PTC composition body causes the electrode film to be formed. There has been a problem that the resistance value increases due to wrinkles or cracks, or peeling off from the element body.
【0006】[0006]
【課題を解決するための手段】本発明に係る有機質PT
Cサーミスタは、上述した課題を解決するためのもので
あって、その電極が金属メッシュと金属層との組合せか
らなる。SUMMARY OF THE INVENTION An organic PT according to the present invention
The C thermistor is for solving the above-mentioned problem, and its electrode is composed of a combination of a metal mesh and a metal layer.
【0007】この金属メッシュは、PTC組成物の表面
にその一部が露出するように埋設することによって形成
される。 [0007] The metal mesh is formed on the surface of the PTC composition.
Formed by embedding so that part of it is exposed
Is done.
【0008】また、この金属層は、埋設した金属メッシ
ュを含むPTC組成物の表面を研磨して、メッシュ及び
導電性物質の露出面積を増やした後に形成され、化学め
っき,電気めっき,真空気相めっき,または溶射から選
択された少なくとも1種以上から形成されている。 [0008] The metal layer is formed of a buried metal mesh.
Polishing the surface of the PTC composition containing
Formed after increasing the exposed area of conductive material,
Plating, electroplating, vacuum vapor phase plating, or thermal spraying
It is formed from at least one or more selected materials.
【0009】更に、この金属メッシュは、好ましくは2
00〜600メッシュのものである。Further, the metal mesh preferably has a thickness of 2 mm.
It is a thing of 00-600 mesh.
【0010】また、この金属メッシュは、好ましくは平
織りメッシュ,つぶし加工を施した平織りメッシュ,メ
ッシュ線の交差部に段差のないメッシュから選択された
1種のものを用いている。The metal mesh is preferably one selected from a plain woven mesh, a crushed plain woven mesh, and a mesh having no step at the intersection of the mesh lines.
【0011】本発明に係る有機質PTCサーミスタにお
ける有機ポリマーは、ポリエチレン,ポリプロピレン,
ポリフッ化ビニリデン,ポリ塩化ビニル,ポリ酢酸ビニ
ル,アイオノマー樹脂,またはこれらの共重合体の群か
ら選択され、導電性物質は、カーボンブラック,グラフ
ァイト,炭素繊維,導電性ウィスカー,金属粒子,導電
性セラミック粉の群から選択されたものである。The organic polymer in the organic PTC thermistor according to the present invention is polyethylene, polypropylene,
The conductive material is selected from the group consisting of polyvinylidene fluoride, polyvinyl chloride, polyvinyl acetate, ionomer resin, and a copolymer thereof, and the conductive material is carbon black, graphite, carbon fiber, conductive whisker, metal particles, conductive ceramic. It is selected from a group of powders.
【0012】更に、導電性セラミック粉は、好ましくは
炭化タングステンからなる。Further, the conductive ceramic powder preferably comprises tungsten carbide.
【0013】[0013]
【作用】上述したように、本発明に係る有機質PTCサ
ーミスタは、電極が金属メッシュと金属層との組合せか
らなる電極構造を有することによって、PTC素体の大
きさに見合った抵抗値が得られるとともに、抵抗値の安
定化が図れる。As described above, in the organic PTC thermistor according to the present invention, since the electrode has an electrode structure composed of a combination of a metal mesh and a metal layer, a resistance value corresponding to the size of the PTC element body can be obtained. At the same time, the resistance value can be stabilized.
【0014】また、金属メッシュが、PTC組成物の表
面にその一部が露出するように埋設されることによっ
て、PTC素体の初期抵抗値が下がるとともに熱ストレ
スによる応力を緩和し、素体や電極の変形、亀裂防止等
の機械的補強が可能となる。Further, the metal mesh is buried so that a part of the metal mesh is exposed on the surface of the PTC composition, so that the initial resistance value of the PTC element is reduced, and the stress due to thermal stress is reduced. Mechanical reinforcement such as electrode deformation and crack prevention can be achieved.
【0015】更に、この金属層が、金属メッシュを含む
PTC組成物の研磨した表面に形成されることによっ
て、抵抗値の安定化が図れるととものに、より抵抗値の
低いものができる、この金属層を化学めっき,電気めっ
き,真空気相めっき,または溶射から選択された少なく
とも1種以上とすることによって、PTC素体の初期抵
抗値が下がる。 Further, the metal layer includes a metal mesh.
By forming on the polished surface of the PTC composition
As a result, the resistance value can be stabilized, and
This metal layer can be formed by chemical plating or electroplating.
Selected from vacuum vapor deposition or thermal spraying
By using at least one of them, the initial resistance of the PTC body is improved.
The resistance value drops.
【0016】また、金属メッシュを200〜600メッ
シュとすることによって、所定形状の打抜きや切断が容
易であり、かつ低コストで形成できる。Further , by using a metal mesh of 200 to 600 mesh, punching and cutting of a predetermined shape are easy and can be formed at low cost.
【0017】更に、金属メッシュが、平織りメッシュ,
つぶし加工を施した平織りメッシュ,メッシュ線の交差
部に段差のないメッシュから選択された1種を用いるこ
とによって、金属メッシュの厚みを薄くできるととも
に、PTC素体表面の金属メッシュ露出面積が増え、よ
り薄形な素子が得られ、かつ、研磨作業が容易になるた
め、製造工程が簡略化される。Further, the metal mesh is a plain weave mesh,
By using one selected from a flat woven mesh subjected to crushing processing and a mesh having no step at the intersection of the mesh lines, the thickness of the metal mesh can be reduced, and the metal mesh exposed area on the surface of the PTC element body increases, Since a thinner element is obtained and the polishing operation is facilitated, the manufacturing process is simplified.
【0018】本発明に係る有機質PTCサーミスタにお
ける有機ポリマーについては、例えばポリエチレン,ポ
リプロピレン,ポリフッ化ビニリデン,ポリ塩化ビニ
ル,ポリ酢酸ビニル,アイオノマー樹脂,またはこれら
の共重合体の群から選び、導電性物質については、カー
ボンブラック,グラファイト,炭素繊維,導電性ウィス
カー,金属粒子,導電性セラミック粉の群から選ぶこと
によって、抵抗値、抵抗変化率、破壊電圧、抵抗−温度
特性(R−T特性)の繰り返し安定性、信頼性の面で優
れたものができる。The organic polymer in the organic PTC thermistor according to the present invention is selected from the group consisting of, for example, polyethylene, polypropylene, polyvinylidene fluoride, polyvinyl chloride, polyvinyl acetate, ionomer resin, and copolymers thereof. Is selected from the group consisting of carbon black, graphite, carbon fiber, conductive whiskers, metal particles, and conductive ceramic powder to obtain resistance, resistance change rate, breakdown voltage, and resistance-temperature characteristics (RT characteristics). Excellent in repetition stability and reliability.
【0019】また、この導電性セラミック粉を炭化タン
グステンとすることによって、低抵抗で抵抗−温度特性
(R−T特性)の繰り返し安定性に優れたPTC素子が
得られるとともに、PTC素子の小型化が可能となる。By using tungsten carbide as the conductive ceramic powder, a PTC element having low resistance and excellent repetition stability of resistance-temperature characteristics (RT characteristics) can be obtained, and the size of the PTC element can be reduced. Becomes possible.
【0020】[0020]
【発明の実施の形態】図1(a)は、本発明の実施例に
おけるシート状に形成された有機質PTCサーミスタ素
体に金属メッシュを埋込んだ状態を示す斜視図、同図
(b)は、そのA−A'断面図である。図2〜図5は、
本発明の実施例による抵抗−温度特性(R−T特性)を
示す図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1A is a perspective view showing a state in which a metal mesh is embedded in an organic PTC thermistor element formed in a sheet shape in an embodiment of the present invention, and FIG. And its AA 'sectional view. 2 to 5
FIG. 4 is a diagram illustrating resistance-temperature characteristics (RT characteristics) according to an example of the present invention.
【0021】有機質PTCサーミスタ組成物は、有機ポ
リマーと導電性物質を適宜の割合で混練して製造する。
有機ポリマーとしては、例えば、ポリエチレン,ポリプ
ロピレン,ポリフッ化ビニリデン,ポリ塩化ビニル,ポ
リ酢酸ビニル,アイオノマー樹脂,またはこれらの共重
合体等があげられる。また、導電性物質としては、ファ
ーネスブラック,アセチレンブラック等のカーボンブラ
ック,グラファイト,炭素繊維,導電性ウィスカー,炭
化タングステン等の導電性セラミック粉やNi,Cu,
Ag,Fe,Cr等の金属粒子,またはこれらの中から
何種類かを混和させたものがあげられる。The organic PTC thermistor composition is produced by kneading an organic polymer and a conductive substance at an appropriate ratio.
Examples of the organic polymer include polyethylene, polypropylene, polyvinylidene fluoride, polyvinyl chloride, polyvinyl acetate, an ionomer resin, and a copolymer thereof. Examples of the conductive substance include carbon black such as furnace black and acetylene black, graphite, carbon fiber, conductive whiskers, conductive ceramic powder such as tungsten carbide, Ni, Cu, and the like.
Examples include metal particles such as Ag, Fe, and Cr, or a mixture of several of these.
【0022】バンバリーミキサー,ミキシングロール等
の混練機によって、適宜の割合で調整された有機ポリマ
ーと導電性物質とを、例えば120〜250℃で15〜
60分程度混練する。このとき、混練助剤として抗酸化
剤や界面活性剤等を添加してもよい。また、電子線架
橋、その効果を高めるために架橋助剤を添加して行う電
子線架橋(米国特許3,269,862号明細書)、化
学架橋、シラン化合物を遊離基発生剤の存在下で有機ポ
リマーにグラフト化させた後にシラノール縮合触媒の存
在下で水あるいは水性触媒と接触させる水架橋(特公平
4−11575号公報)等の方法により正抵抗温度特性
の発現後のポリマーの流動性を抑制し抵抗値の安定化が
図られることもある。この後、加熱ロール、熱プレス等
によって、シート状あるいはフィルム状に成形する。The organic polymer and the conductive material adjusted at an appropriate ratio by a kneader such as a Banbury mixer or a mixing roll are mixed at a temperature of 120 to 250 ° C. for 15 to 15 minutes.
Knead for about 60 minutes. At this time, an antioxidant, a surfactant or the like may be added as a kneading aid. Also, electron beam crosslinking, electron beam crosslinking (US Pat. No. 3,269,862) performed by adding a crosslinking aid to enhance the effect, chemical crosslinking, and silane compound in the presence of a free radical generator. After the grafting onto the organic polymer, the polymer is exposed to water or an aqueous catalyst in the presence of a silanol condensation catalyst, and then subjected to a method such as water crosslinking (Japanese Patent Publication No. 4-11575) to determine the fluidity of the polymer after the development of the positive resistance temperature characteristic. In some cases, the resistance is suppressed and the resistance value is stabilized. Then, it is formed into a sheet or film by a heating roll, a hot press or the like.
【0023】このようにして得られた成形体の両主面に
金属メッシュを例えば加熱圧着によって埋込む。A metal mesh is embedded in both main surfaces of the thus obtained molded body by, for example, heat compression.
【0024】ここでの金属メッシュは網目が細かいほど
良いが、網目が極端に細かい場合は、メッシュ製造のコ
ストが高くなり現実的でない。また、網目が粗い場合
は、通常使用されている金属線の線径が太くなり、電極
形成後の成形体を所定形状に打抜き、切断等をするとき
の作業性が悪くなるばかりか、端部において金属線にバ
リが発生する。このことから200〜600メッシュで
あることが望ましい。ここで網目の大きさを表す単位メ
ッシュとは、単位面積(1インチ平方)の一辺(1イン
チ)中にできる網目の数で表される。The metal mesh is better as the mesh is finer. However, when the mesh is extremely fine, the cost of manufacturing the mesh increases, which is not practical. Further, when the mesh is coarse, the diameter of a commonly used metal wire becomes large, so that not only the workability when punching and cutting a molded body after forming an electrode into a predetermined shape is deteriorated, but also the end part is deteriorated. In the above, burrs are generated on the metal wire. For this reason, it is desirable that the mesh size be 200 to 600 mesh. Here, the unit mesh representing the size of the mesh is represented by the number of meshes formed in one side (1 inch) of the unit area (1 inch square).
【0025】また、メッシュの材質および織り方につい
ては、ステンレス綱,Cu,Fe,Ni,真鍮等の金属
を使用し、平織り,あや織り,変則織り,あるいはつぶ
し加工を施したもの,またはこれらにめっき被覆したも
のを使用するが、線の段差の小さいものほど良い。更
に、エッチング、打抜き等により形成された線の交差部
に段差のないものなどを使用することもできる。The material and weave of the mesh are made of stainless steel, metal such as Cu, Fe, Ni, brass, etc., and are subjected to plain weave, twill weave, irregular weave, or crushing, or to these. A plated coating is used, but the smaller the step of the wire, the better. Furthermore, a line having no step at the intersection of lines formed by etching, punching, or the like can be used.
【0026】このとき、メッシュは、成形体内部に完全
に埋設するのではなく、図1(b)のように成形体表面
に均一に露出させておく。埋設後に表面をサンドブラス
ト、サンドペーパー等の機械研磨あるいは酸による化学
研磨等により粗面化してメッシュを露出させる。At this time, the mesh is not completely buried inside the molded body, but is uniformly exposed on the surface of the molded body as shown in FIG. 1B. After embedding, the surface is roughened by mechanical polishing such as sandblasting or sandpaper or chemical polishing with an acid to expose the mesh.
【0027】次に、化学めっき、電気めっき、真空気相
めっき(蒸着,スパッタリング),または溶射等により
金属層を形成する。めっきに使用する金属材料は、N
i,Cu,Ag,Sn,Cr等であり、特に限定しな
い。Next, a metal layer is formed by chemical plating, electroplating, vacuum vapor phase plating (evaporation, sputtering), thermal spraying, or the like. The metal material used for plating is N
i, Cu, Ag, Sn, Cr, etc., and are not particularly limited.
【0028】最後に打抜き、切断等により所望の大きさ
に加工する。さらに必要に応じて金属リード線をはんだ
付けした後絶縁樹脂でモールドしたり、導電性接着剤あ
るいははんだ付けにより、外部金属端子を接着すること
もある。Finally, it is processed to a desired size by punching, cutting or the like. Further, if necessary, the metal lead wires may be soldered and then molded with an insulating resin, or the external metal terminals may be bonded by a conductive adhesive or soldering.
【0029】[0029]
【実施例】具体的な本発明の実施例を説明する。EXAMPLES Specific examples of the present invention will be described.
【0030】有機ポリマーとしてポリフッ化ビニリデン
(以下、PVDFとする)[米国エルフ・アトケム・ノ
ース・アメリカ社製カイナー711]を使用し、ポリマ
ー重量に対してシランカップリング剤[信越化学工業
(株)社製KBC1003]を10重量部、有機過酸化
物2,5−ジメチル−2,5−ジ(t−ブチルパーオキ
シン)ヘキシン−3を1重量部の割合で加え、200℃
に加熱しながら2軸押出し機でグラフト化樹脂を作製し
た。Polyvinylidene fluoride (hereinafter referred to as PVDF) [Kyner 711 manufactured by Elf Atochem North America, USA] was used as an organic polymer, and a silane coupling agent [Shin-Etsu Chemical Co., Ltd.] was used based on the weight of the polymer. 10% by weight of KBC1003 manufactured by K.K., and 1 part by weight of organic peroxide 2,5-dimethyl-2,5-di (t-butylperoxin) hexyne-3 at 200 ° C.
The grafted resin was produced with a twin-screw extruder while heating the mixture.
【0031】更にグラフト化樹脂に炭化タングステン
(以下WCとする)[日本新金属(株)社製WC−F]
を30体積%混合し、200℃に加熱しながら回転数2
5rpmにて1時間混練してPTC組成物を得た。Further, tungsten carbide (hereinafter referred to as WC) [WC-F manufactured by Nippon Shinkin Co., Ltd.] is used as the grafted resin.
Was mixed at 30% by volume and heated to 200 ° C. while rotating at 2 rpm.
The mixture was kneaded at 5 rpm for 1 hour to obtain a PTC composition.
【0032】次にこのPTC組成物に200℃−30k
gf/cm2にて熱プレスして、厚さ(t)が1mm程
度のシート成形物を得た。Next, the PTC composition was added at 200 ° C.-30 k
The sheet was hot-pressed at gf / cm 2 to obtain a sheet molded product having a thickness (t) of about 1 mm.
【0033】(実施例1)こうして得られたシート成形
物の両主面に200メッシュの平織りステンレス製メッ
シュを200℃−30kgf/cm2の条件にて埋込
み、室温にて徐冷した後、無電解にてNiめっきを膜厚
1〜2μm施し、サンプルを得た。Example 1 A 200-mesh plain-woven stainless steel mesh was embedded on both main surfaces of the sheet molded product thus obtained at 200 ° C.-30 kgf / cm 2, cooled slowly at room temperature, and then electrolessly formed. , Ni plating was applied to a thickness of 1 to 2 µm to obtain a sample.
【0034】(実施例2)めっきを施す前にシート表面
をサンドペーパーで研磨して露出面積を拡げた以外は、
実施例1と同じ条件でサンプルを得た。(Example 2) The surface of the sheet was polished with sandpaper before plating to increase the exposed area.
A sample was obtained under the same conditions as in Example 1.
【0035】(実施例3)めっきに代えて周囲温度16
0℃にてCuを真空蒸着にて膜厚1〜2μm施した以外
は、実施例1と同じ条件でサンプルを得た。(Embodiment 3) Instead of plating, an ambient temperature of 16
A sample was obtained under the same conditions as in Example 1 except that Cu was applied at 0 ° C. by vacuum evaporation to a thickness of 1 to 2 μm.
【0036】(実施例4)真空蒸着を施す前にシート表
面をサンドペーパーで研磨して露出面積を拡げた以外
は、実施例3と同じ条件でサンプルを得た。Example 4 A sample was obtained under the same conditions as in Example 3 except that the surface of the sheet was polished with sandpaper to increase the exposed area before vacuum deposition.
【0037】(実施例5)200メッシュの平織りステ
ンレス製メッシュに代えて400メッシュの平織りステ
ンレス製メッシュを用いた以外は、実施例3と同じ条件
でサンプルを得た。Example 5 A sample was obtained under the same conditions as in Example 3 except that a 400-mesh plain-woven stainless steel mesh was used instead of the 200-mesh plain-woven stainless steel mesh.
【0038】(実施例6)200メッシュの平織りステ
ンレス製メッシュに代えて400メッシュの線の交差部
に段差のないステンレス製メッシュを用いた以外は、実
施例3と同じ条件でサンプルを得た。Example 6 A sample was obtained under the same conditions as in Example 3 except that a stainless steel mesh having no steps at the intersections of 400-mesh lines was used instead of the 200-mesh plain-woven stainless steel mesh.
【0039】(比較例1)メッシュを用いずにめっきの
みで電極を形成し、サンプルを得た。(めっきの条件は
実施例1と同じ条件である。)Comparative Example 1 An electrode was formed only by plating without using a mesh to obtain a sample. (Plating conditions are the same as in Example 1.)
【0040】(比較例2)めっきを施さない以外は、実
施例1と同じ条件でサンプルを得た。Comparative Example 2 A sample was obtained under the same conditions as in Example 1 except that no plating was performed.
【0041】(比較例3)メッシュを用いずに真空蒸着
のみで電極を形成し、サンプルを得た。(真空蒸着の条
件は実施例3と同じ条件である。)Comparative Example 3 An electrode was formed only by vacuum evaporation without using a mesh, to obtain a sample. (The conditions for vacuum deposition are the same as those in Example 3.)
【0042】以上のようにして得た各シート状サンプル
を10φの大きさに打抜いてPTC素子を作製した。各
素子の初期抵抗値を4端子法にて測定した。Each sheet-like sample obtained as described above was punched into a size of 10φ to produce a PTC element. The initial resistance value of each element was measured by a four-terminal method.
【0043】電極の密着強度をみるために粘着テープ
[ソニーケミカル社製T4000]によってピーリング
試験を行った。ここでピーリング試験とは、粘着テープ
を素子の電極部全体に密着させ、瞬間的に粘着テープを
引き剥がしたときに粘着テープに電極が付着しているか
否かで電極の密着強度をみる方法による試験である。A peeling test was performed using an adhesive tape [T4000 manufactured by Sony Chemical Co., Ltd.] to check the adhesion strength of the electrodes. Here, the peeling test is a method in which the adhesive tape is adhered to the entire electrode portion of the element, and the adhesive strength of the electrode is determined by whether or not the electrode is adhered to the adhesive tape when the adhesive tape is instantaneously peeled off. It is a test.
【0044】また、各素子について室温(25℃)から
200℃までの抵抗−温度特性(R−T特性)を測定し
た。The resistance-temperature characteristics (RT characteristics) of each element from room temperature (25 ° C.) to 200 ° C. were measured.
【0045】以上の結果を表1及び図2〜図5にまとめ
た。The above results are summarized in Table 1 and FIGS.
【0046】◎◎
【表1】[Table 1]
【0047】めっきまたは真空蒸着のみ(比較例1、
3)の場合には、電極とPTC素体との密着が弱く、初
期抵抗値も高かった。また、メッシュのみ(比較例2)
の場合には、素体の機械的強度はアップするものの、図
5に示すとおり初期抵抗値が高く不安定であった。Only plating or vacuum deposition (Comparative Example 1,
In the case of 3), the adhesion between the electrode and the PTC body was weak, and the initial resistance was high. Only mesh (Comparative Example 2)
In the case of, the mechanical strength of the element was increased, but the initial resistance was high and unstable as shown in FIG.
【0048】これに対して、めっきまたは真空蒸着を行
う前にメッシュを埋設するやり方によれば、初期抵抗値
が下がるとともに熱ストレスによる応力を緩和し、PT
C素体や電極の変形、亀裂防止等の機械的補強効果があ
ることが判明した。(実施例1、3、5)On the other hand, according to the method of embedding the mesh before plating or vacuum deposition, the initial resistance value is reduced, the stress due to thermal stress is reduced, and the PT is reduced.
It has been found that there is a mechanical reinforcing effect such as deformation and crack prevention of the C element and the electrode. (Examples 1, 3, and 5)
【0049】メッシュの線の交差部に段差のないもの
(実施例6)を用いたり、平織りメッシュを埋設後、P
TC素体ごと表面を研磨し、メッシュ及びPTC組成物
中の導電粒子の表面露出面積を増す(実施例2、4)こ
とによって、よりいっそうその効果が得られる。図2〜
図4に示すとおり初期抵抗値が低くできた。After using a mesh having no step at the intersection of the mesh lines (Example 6) or embedding a plain weave mesh,
By polishing the surface together with the TC element and increasing the surface exposed area of the mesh and the conductive particles in the PTC composition (Examples 2 and 4), the effect can be obtained even more. Figure 2
As shown in FIG. 4, the initial resistance was low.
【0050】これは、図6(b)に示すような従来例で
は、平織りメッシュの構造上、PTC素体1にメッシュ
2を熱圧着させただけでは、メッシュ線の交差部2aが
点在して露出するだけであり、めっきや真空蒸着の金属
層3との接触面積が少なく、結果として初期抵抗値が上
がってしまう。これに対して、図1(b)に示すような
本発明の実施例では、メッシュ2を埋設した後、表面を
研磨することによって、メッシュの交差部2aの表面露
出部分が線状に拡がり、めっきや真空蒸着の金属層3と
の接触面積が多くなり、結果として初期抵抗値が下がる
ものと考えられる。In the conventional example as shown in FIG. 6 (b), when the mesh 2 is simply thermocompression-bonded to the PTC element 1 due to the structure of the plain woven mesh, intersections 2a of the mesh lines are scattered. And the contact area with the metal layer 3 by plating or vacuum deposition is small, and as a result, the initial resistance value increases. On the other hand, in the embodiment of the present invention as shown in FIG. 1 (b), after the mesh 2 is buried, the surface is polished, so that the surface exposed portion of the intersection 2a of the mesh expands linearly. It is considered that the contact area with the metal layer 3 by plating or vacuum deposition increases, and as a result, the initial resistance value decreases.
【0051】尚、図7(b)に示すようなめっきや真空
蒸着の金属層3のみ(比較例1、3)の場合では、PT
C素体1と金属層3との線膨張係数の違いから熱膨張収
縮の応力によって、PTC素体1や金属層3の変形、し
わ、亀裂等が発生することがある。一方、各実施例のよ
うにメッシュ2を埋設することによって、メッシュ2の
開口部における応力を緩和するとともに金属層3の土台
のような役割を果たす(アンカー効果)と考えられ、金
属層3単独での問題が改善されることが解った。In the case of only the metal layer 3 of plating or vacuum deposition as shown in FIG. 7B (Comparative Examples 1 and 3), PT
Due to the difference in the coefficient of linear expansion between the C element body 1 and the metal layer 3, deformation, wrinkles, cracks, and the like of the PTC element body 1 and the metal layer 3 may occur due to stress due to thermal expansion and contraction. On the other hand, by embedding the mesh 2 as in each embodiment, it is considered that the stress at the opening of the mesh 2 is alleviated and the metal layer 3 plays a role as a base (anchor effect). It turned out that the problem in was improved.
【0052】[0052]
【発明の効果】以上のことから、本発明によれば、2次
電池の充電回路の短絡、自動車のドアロック用モーター
に代表される小型モーターのロック、電話通信回路や情
報機器の短絡による過電流防止のために有用な有機質P
TCサーミスタを得ることができる。As described above, according to the present invention, the short circuit of the charging circuit of the secondary battery, the locking of the small motor typified by the motor for the door lock of the automobile, the short circuit of the telephone communication circuit and the information equipment, etc. Organic P useful for current prevention
A TC thermistor can be obtained.
【0053】請求項1に記載の発明によれば、PTC素
体の大きさに見合った抵抗値並びに 抵抗値が安定化する
と共に、初期抵抗値が下がる。更に熱ストレスによる応
力を緩和し、PTC素体の変形や電極のしわ、亀裂防止
等の機械的補強ができる。 According to the first aspect of the present invention, the PTC element
Stabilizes the resistance value and resistance value according to the body size
At the same time, the initial resistance value decreases. In addition, due to heat stress
Reduces force, prevents deformation of PTC body, wrinkles and cracks in electrodes
And other mechanical reinforcement.
【0054】請求項2に記載の発明によれば、所定形状
の打抜きや切断が容易であり、かつ低コストで形成でき
る。According to the second aspect of the present invention, punching and cutting of a predetermined shape are easy and can be formed at low cost.
【0055】請求項3に記載の発明によれば、より薄形
なPTC素子が得られるとともに、研磨作業が容易にな
り、製造工程が簡略化される。According to the third aspect of the present invention, a thinner PTC element can be obtained, the polishing operation is facilitated, and the manufacturing process is simplified.
【0056】請求項4に記載の発明によれば、抵抗値、
抵抗変化率、破壊電圧、抵抗−温度特性(R−T特性)
の繰り返し安定性、信頼性の面で優れたものができる。According to the fourth aspect of the present invention, the resistance value,
Resistance change rate, breakdown voltage, resistance-temperature characteristics (RT characteristics)
With excellent repetition stability and reliability.
【0057】そして、請求項5に記載の発明によれば、
更に、低抵抗で抵抗−温度特性(R−T特性)の繰り返
し安定性に優れたPTC素子が得られるとともに、PT
C素子の小型化が可能となる。According to the fifth aspect of the present invention,
Further, a PTC element having low resistance and excellent in repetition stability of resistance-temperature characteristics (RT characteristics) can be obtained.
The size of the C element can be reduced.
【0058】[0058]
【図1】本発明の実施例における、シート状に形成され
た有機質PTCサーミスタ素体に金属メッシュを埋込ん
だ状態を示す図FIG. 1 is a diagram showing a state in which a metal mesh is embedded in an organic PTC thermistor element formed in a sheet shape in an example of the present invention.
【図2】本発明の実施例1と実施例2の抵抗−温度特性
(R−T特性)を示す図FIG. 2 is a diagram showing resistance-temperature characteristics (RT characteristics) of Example 1 and Example 2 of the present invention.
【図3】本発明の実施例3と実施例4の抵抗−温度特性
(R−T特性)を示す図FIG. 3 is a diagram showing resistance-temperature characteristics (RT characteristics) of Examples 3 and 4 of the present invention.
【図4】本発明の実施例5と実施例6の抵抗−温度特性
(R−T特性)を示す図FIG. 4 is a graph showing resistance-temperature characteristics (RT characteristics) of Examples 5 and 6 of the present invention.
【図5】本発明の実施例3と比較例2の抵抗−温度特性
(R−T特性)を示す図FIG. 5 is a diagram showing resistance-temperature characteristics (RT characteristics) of Example 3 of the present invention and Comparative Example 2.
【図6】本発明に係る従来例を示す図FIG. 6 is a diagram showing a conventional example according to the present invention.
【図7】本発明に係る従来例における抵抗−温度特性
(R−T特性)測定の際の熱ストレスの様子を示す説明
図FIG. 7 is an explanatory diagram showing a state of thermal stress when measuring resistance-temperature characteristics (RT characteristics) in a conventional example according to the present invention.
1 PTC素体 2 金属メッシュ 2a メッシュ交差部 3 金属層 1 PTC body 2 Metal mesh 2a Mesh intersection 3 Metal layer
Claims (5)
抵抗温度特性を示すPTC組成物と少なくとも一対の電
極を有する有機質PTCサーミスタであって、 前記電極は、金属メッシュと金属層との組合せからなる
電極構造を有しており、 前記金属メッシュは、PTC組成物の表面にその一部が
露出するように埋設されており、 前記金属層は、前記金属メッシュを含むPTC組成物の
研磨された表面に形成されており、化学めっき,電気め
っき,真空気相めっき,または溶射から選択された少な
くとも1種以上から形成されている ことを特徴とする有
機質PTCサーミスタ。1. An organic PTC thermistor having a positive temperature coefficient PTC composition in which a conductive substance is dispersed in an organic polymer and at least one pair of electrodes, wherein the electrodes are a combination of a metal mesh and a metal layer. and have a electrode structure composed of the metal mesh, is a part on the surface of the PTC composition
The metal layer is embedded so as to be exposed, and the metal layer is formed of a PTC composition including the metal mesh.
Formed on polished surface, chemical plating, electromechanical
, Vacuum vapor plating, or thermal spraying
An organic PTC thermistor characterized by being formed from at least one kind .
シュであることを特徴とする請求項1に記載の有機質P
TCサーミスタ。 2. The organic P according to claim 1 , wherein the metal mesh is 200 to 600 mesh.
TC thermistor.
ぶし加工を施した平織りメッシュ,メッシュ線の交差部
に段差のないメッシュから選択された1種のものを用い
られていることを特徴とする請求項1または2に記載の
有機質PTCサーミスタ。 3. The metal mesh is one selected from the group consisting of a plain woven mesh, a crushed plain woven mesh, and a mesh having no step at the intersection of mesh lines. Item 3. The organic PTC thermistor according to Item 1 or 2 .
プロピレン,ポリフッ化ビニリデン,ポリ塩化ビニル,
ポリ酢酸ビニル,アイオノマー樹脂,またはこれらの共
重合体の群から選択され、前記導電性物質は、カーボン
ブラック,グラファイト,炭素繊維,導電性ウィスカ
ー,金属粒子,導電性セラミック粉の群から選択されて
いることを特徴とする請求項1〜3のいずれか1項に記
載の有機質PTCサーミスタ。 Wherein said organic polymer is polyethylene, polypropylene, polyvinylidene fluoride, polyvinyl chloride,
The conductive material is selected from the group consisting of polyvinyl acetate, ionomer resin, or a copolymer thereof, and the conductive material is selected from the group consisting of carbon black, graphite, carbon fiber, conductive whiskers, metal particles, and conductive ceramic powder. The organic PTC thermistor according to any one of claims 1 to 3 , wherein
テンからなることを特徴とする請求項1〜4のいずれか
1項に記載の有機質PTCサーミスタ。 Wherein said conductive ceramic powder, organic PTC thermistor according to any one of claims 1 to 4, characterized in that it consists of tungsten carbide.
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP908496A JP2936057B2 (en) | 1996-01-23 | 1996-01-23 | Organic PTC thermistor |
| US08/682,301 US5793276A (en) | 1995-07-25 | 1996-07-17 | Organic PTC thermistor |
| EP96111794A EP0758131B1 (en) | 1995-07-25 | 1996-07-22 | Organic PTC thermistor |
| DE69633547T DE69633547T2 (en) | 1995-07-25 | 1996-07-22 | Organic PTC thermistor |
| NO19963059A NO318126B1 (en) | 1995-07-25 | 1996-07-23 | Organic thermistor with positive temperature coefficient and preventive device against overheating with such PTK thermistor element |
| TW085109112A TW312794B (en) | 1995-07-25 | 1996-07-24 | |
| MYPI96003041A MY115034A (en) | 1995-07-25 | 1996-07-24 | Organic ptc thermistor |
| KR1019960030230A KR100295013B1 (en) | 1995-07-25 | 1996-07-25 | Organic PTC Thermistor and Fluorescent Lamp Overheating Device Using It |
| CN96112244A CN1090797C (en) | 1995-07-25 | 1996-07-25 | Organic PTC thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP908496A JP2936057B2 (en) | 1996-01-23 | 1996-01-23 | Organic PTC thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09199307A JPH09199307A (en) | 1997-07-31 |
| JP2936057B2 true JP2936057B2 (en) | 1999-08-23 |
Family
ID=11710760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP908496A Expired - Lifetime JP2936057B2 (en) | 1995-07-25 | 1996-01-23 | Organic PTC thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2936057B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100381918B1 (en) * | 2001-02-20 | 2003-04-26 | 엘지전선 주식회사 | Method for overcurrent protecting PTC polymer fuse |
| KR101015843B1 (en) | 2009-10-29 | 2011-02-23 | 삼성모바일디스플레이주식회사 | Organic light emitting device |
| US9295944B2 (en) | 2011-12-27 | 2016-03-29 | Toyota Jidosha Kabushiki Kaisha | Electrically heated catalyst device and its manufacturing method |
-
1996
- 1996-01-23 JP JP908496A patent/JP2936057B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09199307A (en) | 1997-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100295013B1 (en) | Organic PTC Thermistor and Fluorescent Lamp Overheating Device Using It | |
| US5841111A (en) | Low resistance electrical interface for current limiting polymers by plasma processing | |
| TW535172B (en) | Thermistor and method of manufacture | |
| JP2002501949A (en) | Polymer composition | |
| JP2000188206A (en) | Polymer ptc composition and ptc device | |
| JP2936057B2 (en) | Organic PTC thermistor | |
| JPH09506212A (en) | Thermosensitive compound, method for producing the same, and method for utilizing the same | |
| JPH1098829A (en) | Protective circuit employing ptc element and protective element therefor | |
| JP2810351B2 (en) | Organic positive temperature coefficient thermistor | |
| JPH10208902A (en) | Production of organic ptc thermistor | |
| JP3586178B2 (en) | Organic positive temperature coefficient thermistor and manufacturing method thereof | |
| CN100479072C (en) | overcurrent protection element | |
| JP2001035640A (en) | PTC element and method of manufacturing the same | |
| JP4196582B2 (en) | Electrical fuse element and manufacturing method thereof | |
| JP3214546B2 (en) | Organic positive temperature coefficient thermistor manufacturing method and organic positive temperature coefficient thermistor | |
| JP3197751B2 (en) | Planar heating device | |
| JPH0935906A (en) | Polymer based ptc element and its manufacture | |
| JP2001052901A (en) | Chip organic positive temperature coefficient thermistor and manufacturing method therefor | |
| JPH09161952A (en) | Sheet-form heating body | |
| JPH10125504A (en) | Organic positive characteristic thermistor and its manufacture | |
| JPH0955302A (en) | Glass sealed thermistor for high temperature | |
| WO1998026433A1 (en) | Overcurrent protective circuit element | |
| JPH1131603A (en) | Ptc resistant element for protecting electric circuit and manufacture thereof | |
| JP2001176702A (en) | PTC thermistor | |
| JPS6285401A (en) | Positive characteristics organic thermister |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990525 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080604 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090604 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090604 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100604 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110604 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120604 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120604 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130604 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140604 Year of fee payment: 15 |
|
| EXPY | Cancellation because of completion of term |