JP2937620B2 - Manufacturing method of contact alloy for vacuum valve - Google Patents
Manufacturing method of contact alloy for vacuum valveInfo
- Publication number
- JP2937620B2 JP2937620B2 JP4121867A JP12186792A JP2937620B2 JP 2937620 B2 JP2937620 B2 JP 2937620B2 JP 4121867 A JP4121867 A JP 4121867A JP 12186792 A JP12186792 A JP 12186792A JP 2937620 B2 JP2937620 B2 JP 2937620B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- contact
- powder
- vacuum valve
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/0203—Contacts characterised by the material thereof specially adapted for vacuum switches
Landscapes
- Powder Metallurgy (AREA)
- Manufacture Of Switches (AREA)
- High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、真空バルブ用接点合金
の製造方法に係り、特に再点弧発生頻度の軽減化および
遮断性能を改善できる真空バルブ用接点合金の製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a contact alloy for a vacuum valve, and more particularly to a method for producing a contact alloy for a vacuum valve capable of reducing the frequency of restriking and improving the breaking performance.
【0002】[0002]
【従来の技術】真空バルブ用接点に要求される特性は、
耐溶着、耐電圧、高遮断性である。しかし、これら3要
件に対しては相反する物理的性質が要求されるので理想
的に両立させることは困難であり、適用する回路の優先
要件を第1にして、他の要件は若干犠牲にして対応する
のが現状である。2. Description of the Related Art The characteristics required for vacuum valve contacts are as follows.
It has resistance to welding, withstand voltage and high breaking. However, these three requirements require conflicting physical properties, making it difficult to make them ideally compatible. Therefore, the priority requirement of the circuit to be applied is first, and the other requirements are slightly sacrificed. The current situation is to respond.
【0003】例えば従来、高耐圧、大容量真空遮断器に
おいては、溶着防止成分(Bi、Te、Pbなど)を5
重量%(以下、wt%と記す)以下含有するCu合金を
電極接点として具備したものが知られている(特公昭4
1−12131号公報)。[0003] For example, conventionally, in a high-voltage, large-capacity vacuum circuit breaker, a welding-preventive component (Bi, Te, Pb, etc.) contains 5 parts.
It is known that a Cu alloy containing not more than% by weight (hereinafter, referred to as wt%) is provided as an electrode contact (Japanese Patent Publication No. Sho 4).
No. 1-12131).
【0004】ところが、近年高電圧要求に対しては、耐
電圧の面で十分ではない。即ち、真空遮断器は小型軽
量、メンテナンスフリー環境調和など、他の遮断器に比
べ優れた特徴を有するために、年々、その適用範囲も拡
大され、従来一般的に使用されていた36KV以下の回
路から更に高電圧の回路への適用が行われると共に、特
殊回路例えばコンデンサ回路を開閉する需要も急増して
いるので、一層の耐高電圧化が必要となっている。その
達成を阻害している重要な要因の1つとして再点弧現
象、再発弧現象が挙げられる。[0004] However, in recent years, with respect to demand for high voltage, withstand voltage is not sufficient. In other words, the vacuum circuit breaker has features that are superior to other circuit breakers, such as small size, light weight, and maintenance-free environmental harmony. In addition to the application to circuits of higher voltages, the demand for opening and closing special circuits such as capacitor circuits is also rapidly increasing, so that higher voltage resistance is required. One of the important factors hindering the achievement is a re-ignition phenomenon and a re-arc phenomenon.
【0005】再点弧現象は、製品の信頼性向上の観点か
ら重要視されているにもかかわらず、未だ防止技術は勿
論のこと直接的な発生原因についても明らかになってい
ない。[0005] Although the re-ignition phenomenon is regarded as important from the viewpoint of improving the reliability of products, not only its prevention technique but also its direct cause has not been clarified yet.
【0006】上記高耐圧化に伴って、接点材料に対して
も、更に高耐圧でかつ再点弧現象の発生頻度の低い特性
を持つことが要求されている。接点材料の高耐圧化、無
再点弧化を図るには、耐圧的に欠陥となる脆弱な溶着防
止成分の量そのものを極力少なくしたり、過度に集中す
るのを避けることが、ガス不純物やピンホール等を極力
少なくすること、接点合金自体の強度を大きくすること
等々が望ましい。これらの観点からいえば、前述のCu
−Bi合金は満足できるものではない。[0006] With the increase in the withstand voltage, the contact material is required to have a higher withstand voltage and a characteristic in which a re-ignition phenomenon occurs less frequently. In order to achieve high withstand voltage and no restriking of the contact material, it is necessary to minimize the amount of the fragile anti-welding component itself which becomes a defect in pressure resistance as much as possible or to avoid excessive concentration. It is desirable to minimize the number of pinholes and the like and to increase the strength of the contact alloy itself. From these viewpoints, the aforementioned Cu
-Bi alloys are not satisfactory.
【0007】また従来使用されている他の接点材料であ
るCu−W接点またはCu−WC接点は耐電圧的にはか
なり優れているもののこの焼結系接点合金は、製造方法
的にいって気泡が残存し易く、また熱電子放出も盛んな
ため再点弧現象が発生し易いという欠点がある。[0007] Further, although other conventional contact materials such as Cu-W contacts or Cu-WC contacts are considerably excellent in withstand voltage, this sintered contact alloy is not suitable for manufacturing because of its production method. However, there is a drawback that the re-ignition phenomenon is liable to occur because of the tendency for the residual to occur and the active emission of thermoelectrons.
【0008】一方、高耐圧かつ大電流遮断を要求する分
野では、Cu−Cr合金の適用が行われている。Cu−
Cr合金は、他の接点材料ほどには、構成元素間の蒸気
圧差が少ないため均一な性能発揮を期待し得る利点があ
り、使い方によっては、その特徴は十分利用することの
出来る接点合金である。On the other hand, in a field requiring a high withstand voltage and a large current interruption, a Cu—Cr alloy is used. Cu-
The Cr alloy has the advantage that the vapor pressure difference between the constituent elements is smaller than other contact materials, so that uniform performance can be expected. Depending on the usage, the feature is a contact alloy that can be fully utilized. .
【0009】このCu−Cr系接点合金は、概ね、次の
ように製造されている。例えば、特公昭59−3076
1号公報によれば、Cr粉末と少量のCu粉末を混合
し、この混合粉をダイ型に充填して小圧力をかけてプレ
ス成形し、この成形体をダイ型から取出したのち、これ
を真空焼結して、Crスケルトンを形成し最後にCuを
溶浸するという方法である。This Cu-Cr-based contact alloy is generally manufactured as follows. For example, Japanese Patent Publication No. 59-3076
According to Japanese Patent Publication No. 1 (1993), Cr powder and a small amount of Cu powder are mixed, the mixed powder is filled in a die, press-molded with a small pressure, and the molded body is taken out from the die. This is a method of forming a Cr skeleton by vacuum sintering and finally infiltrating Cu.
【0010】また、最近では、型の中にCr粉末を注加
し、その上にCuペレットを載置し、全体を脱ガスした
のち減圧下で溶浸処理を行うという方法も開示されてい
る(特開昭59−25903号公報参照)。[0010] Recently, a method has been disclosed in which a Cr powder is poured into a mold, Cu pellets are placed thereon, and the whole is degassed, and then infiltration is performed under reduced pressure. (See JP-A-59-25903).
【0011】更に、初めから最終目標値のCuとCrと
を混合し、これにより得た成形体をCuの溶融点又はそ
れ以下で固相焼結することによってCu−Cr合金を得
る方法も行われている。Further, a method of obtaining a Cu—Cr alloy by mixing the final target values of Cu and Cr from the beginning and subjecting the obtained compact to solid-phase sintering at or below the melting point of Cu is also carried out. Have been done.
【0012】[0012]
【発明が解決しようとする課題】しかしながら、これら
の合金は、上記のように一般に粉末治金手法によって製
作され、再点弧発生に関与するその原料粉末管理、焼結
技術、及び溶浸技術が十分に確立されていないために、
再点弧発生頻度の点及び遮断性能の点で未だ充分満足の
いくものではない。However, these alloys are generally manufactured by the powder metallurgy technique as described above, and their raw material powder management, sintering technology, and infiltration technology involved in restriking occur. Because it ’s not well established,
It is not yet satisfactory in terms of the frequency of restriking and the breaking performance.
【0013】そこで、この発明は、再点弧発生頻度を著
しく低減させかつ遮断性能を改善させることのできる真
空バルブ用接点合金の製造方法を提供することを目的と
する。An object of the present invention is to provide a method of manufacturing a contact alloy for a vacuum valve, which can significantly reduce the frequency of restriking and improve the breaking performance.
【0014】[0014]
【課題を解決するための手段および作用】本発明者は、
真空バルブ用接点合金の再点弧発生頻度の軽減化及び遮
断特性の安定化のために、この製造方法の原料Crの選
択、焼結条件、溶浸条件等を検討し研究した結果、この
発明を完成するに至った。Means and Functions for Solving the Problems The present inventor has provided:
As a result of studying the selection of raw material Cr, sintering conditions, infiltration conditions, and the like for this manufacturing method in order to reduce the frequency of occurrence of restriking of the contact alloy for vacuum valves and to stabilize the cutoff characteristics, the present invention was completed. Was completed.
【0015】本発明の真空バルブ用接点合金の製造方法
は、耐弧材料となる原料Cr粉、Cr成形体、Crと導
電材料となるCuとの混合粉、CrとCuとの成形体の
表面の一部又は全面に、略800℃で2×10-7Tor
rよりも高い蒸気圧を有する高蒸気圧材料を保護層とし
て厚さ0.05〜5μmだけ付着又は皮覆又は合金化さ
せた第1の工程と、前記高蒸気圧材料により加熱中の汚
染雰囲気から保護しながら、前記第1の工程により得ら
れる保護層付材料からCr焼結体、Cr−Cu焼結体を
得る第2の工程と、前記第2の工程の期間の一部又は総
てにおいてCr又は、Cr−Cuの焼結の進行と共に、
残存する高蒸気圧材料が0.25wt%以下になるよう
に、焼結の温度、時間、昇温降温の速度、雰囲気を蒸発
量制御しながらCrスケルトン、Cr−Cuスケルト
ン、Cr−Cu合金を得る第3の工程を備えたことによ
り、再点弧発生頻度の軽減化および遮断性能が改善され
る。次に、本発明の真空バルブ用接点合金の製造方法で
使用する原料Crの一例につき述べる。The method for producing a contact alloy for a vacuum valve according to the present invention comprises the steps of: starting material Cr powder as an arc-resistant material, a Cr compact, mixed powder of Cr and Cu as a conductive material, surface of a compact of Cr and Cu 2 × 10 −7 Torr at approximately 800 ° C.
a first step in which a high-vapor-pressure material having a higher vapor pressure than r is applied as a protective layer to a thickness of 0.05 to 5 μm or covered or alloyed, and a contaminated atmosphere being heated by the high-vapor-pressure material A second step of obtaining a Cr sintered body or a Cr-Cu sintered body from the material with a protective layer obtained in the first step while protecting from the first step, and part or all of the period of the second step. With the progress of sintering of Cr or Cr-Cu,
Cr skeleton, Cr-Cu skeleton, and Cr-Cu alloy are controlled while controlling the sintering temperature, time, heating / cooling rate, and atmosphere evaporation amount so that the remaining high vapor pressure material becomes 0.25 wt% or less. By providing the third step, the frequency of occurrence of restriking is reduced and the breaking performance is improved. Next, an example of the raw material Cr used in the method for producing a contact alloy for a vacuum valve of the present invention will be described.
【0016】現在、工業的に供給されている金属Crの
精練法は、FeCr2 O4 、MgCr2 O4 などのCr
鉱石をAl或いはSiなどの他の金属で還元し金属Cr
を得る方法(還元法)、及び前記Cr鉱石を溶解し未溶
解の非金属不純物の分離を行い、これを電解液として電
気分散し金属Crを得る方法(電解法)の両方法が主体
である。At present, the refining method of metal Cr supplied industrially is Cr Cr such as FeCr 2 O 4 or MgCr 2 O 4.
Reduction of ore with other metals such as Al or Si
(Reduction method) and a method of dissolving the Cr ore to separate undissolved non-metallic impurities, and electrically dispersing this as an electrolytic solution to obtain metallic Cr (electrolytic method). .
【0017】しかし前者の還元法によって得られたCr
は、ガス量(酸素、窒素)が1000ppm程度、A
l、Si、Feなど不純物を数1000ppm〜100
00ppm程度含有している。一方、後者の電解法によ
るCrは、逆にガス量(酸素、窒素)が1000ppm
〜10000ppmと著しく多く、Alなどの不純物が
比較的少なく、例えば100ppm程度以下含有するの
が一般である。However, the Cr obtained by the former reduction method
Means that the gas amount (oxygen, nitrogen) is about 1000 ppm,
several thousand ppm to 100 of impurities such as l, Si and Fe
It contains about 00 ppm. On the other hand, Cr in the latter electrolytic method has a gas amount (oxygen, nitrogen) of 1000 ppm.
It is remarkably large at 1 to 10000 ppm and relatively low in impurities such as Al, for example, generally contains about 100 ppm or less.
【0018】本発明においては、前記還元法若しくは電
解法で得たCrを粉砕して得たCr粉に必要によりカー
ボン粉を添加したCr−C混合粉体を、例えば真空、水
素など非酸化性雰囲気で、特に800℃以上かつ140
0℃以下の温度で少なくとも1回、加熱処理を行なう。
これによって脱ガスCr粉を得ることができる。In the present invention, the Cr-C mixed powder obtained by adding carbon powder to Cr powder obtained by pulverizing Cr obtained by the above-mentioned reduction method or electrolytic method, if necessary Atmosphere, especially above 800 ° C and 140
The heat treatment is performed at least once at a temperature of 0 ° C. or less.
Thus, degassed Cr powder can be obtained.
【0019】800℃未満の温度では、Cr−C混合
体、成形体の脱ガス効率が劣り再点弧の軽減化に対して
効果が小さい。1400℃又はそれ以上では、その効果
が大であり、特に脱ガス効率に対しては有効であるが、
蒸発も激しくなるため材料の損失が大きくなると共に炉
の汚染も大となり得策でない。このように加熱処理を粉
末化工程の前に行うことで、Cr粉末になってから行う
より有利に再点弧の軽減化が得られる。真空バルブの一
層の高性能化のためには、前記金属Cr集合体に加工す
る前段階で行うのみでなく、必要により更にその後の段
階でも加熱処理を重畳させることは有効である。If the temperature is less than 800 ° C., the degassing efficiency of the Cr—C mixture and the compact is inferior, and the effect of reducing restriking is small. At 1400 ° C. or higher, the effect is significant, and is particularly effective for degassing efficiency.
It is not advisable to evaporate violently, resulting in a large loss of materials and a large contamination of the furnace. By performing the heat treatment before the powdering step in this way, it is possible to more advantageously reduce restriking than to perform the heat treatment after forming the Cr powder. In order to further enhance the performance of the vacuum valve, it is effective not only to perform the step before processing the metal Cr aggregate, but also to superimpose the heat treatment in the subsequent step if necessary.
【0020】脱ガスCr粉の調整に関しては、加熱処理
して得た脱ガスCr塊を粉砕して得た脱ガスCr粉を汚
さず、かつ所定の粒径を持つ脱ガスCr粉とする。脱ガ
スCr粉の粒径は、真空バルブとしての接点特性及び焼
結など接点製造技術上から制限を受ける。脱ガスCr粉
の平均粒径は、5〜250μmが好ましい。脱ガスCr
粉の平均粒径が5μm未満では、焼結又は/及ば溶浸後
のスケルトン又は/及び接点素材中に好ましくない気孔
が生じ易くなり、また、それに応じたガスも多く残存す
る傾向にあり、真空バルブとしての接点特性(例えば、
再点弧特性)に対して好ましくない状態となる。With respect to the adjustment of the degassed Cr powder, the degassed Cr powder obtained by pulverizing the degassed Cr mass obtained by the heat treatment is made to be a degassed Cr powder having a predetermined particle size without being stained. The particle size of the degassed Cr powder is limited by contact manufacturing technology such as contact characteristics as a vacuum valve and sintering. The average particle size of the degassed Cr powder is preferably from 5 to 250 μm. Degassing Cr
If the average particle size of the powder is less than 5 μm, undesired pores are likely to be formed in the skeleton or / and the contact material after sintering or / and infiltration, and a large amount of corresponding gas tends to remain. Contact characteristics as a valve (for example,
This is unfavorable for restriking characteristics).
【0021】また、250μmを超える脱ガスCr粉の
粒径では、耐溶着性、耐電圧特性、遮断特性の何れに対
しても著しいばらつきが見られる。接点素材にも偏析が
見られるようになり、真空バルブの信頼性の観点から好
ましくない。When the particle size of the degassed Cr powder exceeds 250 μm, remarkable variations are observed in all of the welding resistance, the withstand voltage characteristics, and the cutoff characteristics. Segregation also appears in the contact material, which is not preferable from the viewpoint of vacuum valve reliability.
【0022】一方、脱ガスCr粉中の酸素、窒素ガス
は、それぞれ200ppm以下に抑制した状態が望まし
い。これらのガスは、Cr中に含有されるガスと吸着し
ているガスとの総量で構成される。前者の含有している
ガスは、原料Crの加熱処理工程で極少化された状態と
なっているので、特に後者の工程での吸着ガスを少なく
することが肝要である。即ち、汚さずに粉砕することが
重要なポイントであり、での粉砕中の条件は、粉砕エネ
ルギーによってCr粉が過度に、発熱し酸化が進むこと
のないことが重要である。従って、大きな摩擦熱の発生
するような激しい粉砕は避けるべきである。また非酸化
性雰囲気中の粉砕も有効である。特にCr粒径が100
μm又はそれ以下になる場合は、このような点に十分配
慮する必要がある。On the other hand, it is desirable that the oxygen and nitrogen gas in the degassed Cr powder be suppressed to 200 ppm or less, respectively. These gases are composed of the total amount of the gas contained in Cr and the adsorbed gas. Since the gas contained in the former has been minimized in the heat treatment step of the raw material Cr, it is particularly important to reduce the amount of adsorbed gas in the latter step. That is, it is an important point that the pulverization is performed without soiling, and the condition during the pulverization is that the Cr powder does not generate excessive heat due to the pulverization energy and oxidation does not proceed. Therefore, intense pulverization that generates large frictional heat should be avoided. Pulverization in a non-oxidizing atmosphere is also effective. Especially when the Cr particle size is 100
In the case of μm or less, it is necessary to give due consideration to such points.
【0023】前記ガス量が200ppm以上の場合、こ
れにCr粉を使用してCu−Cr合金としても、同合金
中のガス量を好ましい低い水準(例えば200ppm以
下、望ましくは100ppm以下)に維持することは難
しい。即ち真空バルブ用接点を焼結又は/及び溶浸する
ときに選定する熱処理温度では、Crの精製を進行させ
るには、やや不足である。Cu−Cr合金中のガス量
(この場合、酸素)が200ppm以上のときには、再
点弧現象の発生が多発する場合がある。When the gas amount is 200 ppm or more, even if a Cu-Cr alloy is formed by using Cr powder, the gas amount in the alloy is maintained at a preferable low level (for example, 200 ppm or less, preferably 100 ppm or less). It is difficult. That is, at the heat treatment temperature selected when sintering and / or infiltrating the vacuum valve contact, it is somewhat insufficient to advance the purification of Cr. When the gas amount (in this case, oxygen) in the Cu-Cr alloy is 200 ppm or more, the occurrence of restriking may occur frequently.
【0024】成形に関しては、Cr−C混合粉体Cu−
Cr混合体などを8トン/cm2 以下の外部圧力もしく
は該Cr粉の自重の圧力で成形体を形成する。成形体を
得るときの成形圧力は、特に溶浸法による製造(第2の
発明の場合)においては、Cu−Cr合金中のCr量を
決定する要因であり重要である。そこで、ここでは溶浸
法による場合のプロセスを示す。Regarding the molding, the Cr-C mixed powder Cu-
8 tons / cm 2 of Cr mixture A compact is formed under the following external pressure or the pressure of the weight of the Cr powder. The molding pressure at the time of obtaining a compact is a factor that determines the amount of Cr in the Cu—Cr alloy, and is important especially in the production by the infiltration method (in the case of the second invention). Therefore, here, a process in the case of the infiltration method will be described.
【0025】Cu(又は/及びAg)−Cr合金中の脱
ガスCr粉の量は、20〜80wt%の範囲内で選択さ
れ得る。このための成形圧力は、8トン/cm2 以下、
好ましくは7.5トン/cm2 以下、より好ましくは7
トン/cm2 以下である。これは8トン/cm2 を超え
る圧力では溶浸後のCr量が80wt%を超えるため、
本発明における主旨を離脱するため除外する。80wt
%近傍の高Cr量を確保するには、スケルトンとして純
Crを使うことによって対処可能であるが20%近傍の
低Cr量の合金を確保するには、スケルトンとして純C
rの選択は不可能であり、 においてCr−C混合粉
体を得るときに、このCr、Cと共にCrに対してCu
を適量配合したCr+C+Cu混合粉を採用することで
達成される。この際の成形圧力は、混合するCr粉の量
によって8トン/cm2 以下の圧力が自由に選択され得
る。また、成形圧力が8トン/cm2 を超えると、加熱
時に成形体中に亀裂が生ずる場合があるため好ましくな
い。The amount of the degassed Cr powder in the Cu (or / and Ag) -Cr alloy can be selected within a range of 20 to 80 wt%. The molding pressure for this is 8 ton / cm 2 Less than,
Preferably 7.5 tons / cm 2 Below, more preferably 7
Ton / cm 2 It is as follows. This is 8 tons / cm 2 If the pressure exceeds, the amount of Cr after infiltration exceeds 80 wt%,
It is excluded to leave the gist of the present invention. 80wt
% Can be dealt with by using pure Cr as a skeleton. However, to secure an alloy with a low Cr amount of about 20%, pure C must be used as a skeleton.
It is not possible to select r, and when obtaining a Cr-C mixed powder in
This is achieved by employing a Cr + C + Cu mixed powder containing an appropriate amount of The molding pressure at this time is 8 tons / cm 2 depending on the amount of the Cr powder to be mixed. The following pressures can be freely selected: The molding pressure is 8 tons / cm 2 Exceeding the ratio is not preferred because cracks may occur in the molded article during heating.
【0026】焼結に関しては、固相焼結法による製造に
おいては、脱ガスCr粉と導電成分であるCu及び/又
はAgと最終成分に混合してあるので単純なプロセスで
ある。そこで、ここでも溶浸法の場合のプロセスを示
す。Regarding the sintering, the solid phase sintering method is a simple process because the degassed Cr powder, Cu and / or Ag, which are conductive components, and the final component are mixed. Therefore, the process in the case of the infiltration method is shown here.
【0027】前述のようにして得られた成形体を、焼結
用容器と共に加熱炉内に設置して焼結する。焼結雰囲気
は、非酸化性雰囲気であることが必要で、例えば真空又
は水素中である。これらの雰囲気のうち、充填したCr
粉末、プレスした成形体や容器などに吸蔵されている酸
素、窒素を除去するという点では、真空(1×10-5T
orr以上)雰囲気が好適である。The compact obtained as described above is placed in a heating furnace together with a sintering vessel and sintered. The sintering atmosphere needs to be a non-oxidizing atmosphere, for example, in a vacuum or in hydrogen. Of these atmospheres, the filled Cr
In order to remove oxygen and nitrogen occluded in powder, pressed compacts and containers, etc., vacuum (1 × 10 −5 T)
orr) atmosphere is preferred.
【0028】適用する焼結温度、焼成時間は、焼結体で
あるスケルトンの密度、逆に言えばスケルトンの空隙率
に影響を与える。例えばCrスケルトンとその空隙内に
溶浸されるCu量との関係を、重量比で50:50に近
接させるためには、空隙率を40〜50%とするのがよ
く、そのためには、焼結温度800〜1050℃、好ま
しくは900〜950℃、焼結時間0.25〜2時間、
好ましくは0.1〜1時間の範囲が好ましい。上記条件
は、CrとCuとの比に応じて適宜選択される。The sintering temperature and the sintering time to be applied affect the density of the skeleton, that is, the porosity of the skeleton. For example, in order to make the relationship between the Cr skeleton and the amount of Cu infiltrated into the voids close to 50:50 by weight, the porosity is preferably set to 40 to 50%. Sintering temperature 800 to 1050 ° C, preferably 900 to 950 ° C, sintering time 0.25 to 2 hours,
Preferably, the range is 0.1 to 1 hour. The above conditions are appropriately selected according to the ratio of Cr to Cu.
【0029】得られたスケルトンの上面又は/及び下面
に、溶浸材であるCu及び/又はAgを載置し全体を例
えば真空中(1×10-4〜1×10-6Torr)で加熱
してCu及び/又はAgをスケルトン空隙中に溶浸させ
る。The infiltration material Cu and / or Ag is placed on the upper surface and / or lower surface of the obtained skeleton, and the whole is heated, for example, in a vacuum (1 × 10 -4 to 1 × 10 -6 Torr). Then, Cu and / or Ag are infiltrated into the skeleton void.
【0030】溶浸時の温度は、Cu及び/又はAgの溶
融点以上の温度である。Cuの場合1100〜1300
℃、Agの場合1000〜1100℃の範囲であること
が好適である。また溶浸時間は、スケルトン中の空隙
に、これら融液が完全に含浸されるに充分な時間を設定
する。The temperature during infiltration is a temperature higher than the melting point of Cu and / or Ag. 1100 to 1300 for Cu
In the case of ° C and Ag, the temperature is preferably in the range of 1000 to 1100 ° C. The infiltration time is set to a time sufficient to completely impregnate these melts into the voids in the skeleton.
【0031】なお、上記溶浸工程においてはスケルトン
の表面の少なくとも一部に溶浸金属の層を温時に形成す
ることによって、得られる接点合金の銀ロウ接合性(導
電棒のロウ付けする際の)を優れたものとすることがで
きる。合金の組成比について述べると、最終的に得られ
る接点合金の各成分は、下記の範囲が好ましい(但し、
微量の溶着防止成分は略している)。 Cu及び/又はAg:80〜20重量% Cr :20〜80重量%In the above-mentioned infiltration step, a layer of infiltrated metal is formed on at least a part of the surface of the skeleton at the time of warming, so that the obtained contact alloy has a silver brazing property (when brazing the conductive rods). ) Can be excellent. Describing the alloy composition ratio, each component of the finally obtained contact alloy preferably has the following range (however,
A trace amount of the anti-welding component is omitted). Cu and / or Ag: 80 to 20% by weight Cr: 20 to 80% by weight
【0032】合金中のCr量が80%より大のときには
ジュール溶着の多発があり、再点弧に関係の深い表面荒
れに対しては好ましくないのみならず、電圧7.2KV
において40KAの遮断が困難になる。逆にCr量が2
0%未満のときには、例えば40KVを遮断したとき耐
アーク性が維持できず大きいアーク消耗を示し好ましく
ない。When the Cr content in the alloy is more than 80%, Joule welding occurs frequently, which is not preferable for the surface roughness deeply related to restriking, but also at a voltage of 7.2 KV.
In this case, it is difficult to block 40 KA. Conversely, the amount of Cr is 2
If it is less than 0%, for example, when the voltage is cut off at 40 KV, the arc resistance cannot be maintained, and large arc consumption occurs, which is not preferable.
【0033】また、上記組成範囲において、高導電性成
分であるCu及び/又はAg相中に固溶するCrの量は
0.01〜0.35wt%であることが、導電率特性を
安定化させる上で好ましい。In the above composition range, the amount of Cr which forms a solid solution in the Cu and / or Ag phase, which is a highly conductive component, is 0.01 to 0.35 wt%, thereby stabilizing the conductivity characteristics. It is preferable in making it.
【0034】次いで、処理雰囲気について述べると、上
記各工程における処理は、非酸化性雰囲気中で行うこと
が好ましく、具体的には、アルゴンガス等の不活性ガ
ス、H2 ガス、N2 ガス中、もしくは真空中で行われ
る。Next, the processing atmosphere will be described. The processing in each of the above steps is preferably performed in a non-oxidizing atmosphere, specifically, in an inert gas such as an argon gas, H 2 gas, or N 2 gas. Or in a vacuum.
【0035】[0035]
【実施例】以下、本発明の実施例を具体的実施態様に基
づいて説明する。まず、図1及び図2を用いて、この発
明の方法によって得られた合金に適用できる真空バルブ
(真空遮断器)の構成を説明する。EXAMPLES Examples of the present invention will be described below based on specific embodiments. First, the configuration of a vacuum valve (vacuum circuit breaker) applicable to the alloy obtained by the method of the present invention will be described with reference to FIGS.
【0036】図1において、1は遮断室であり、この遮
断室1は絶縁材料によりほぼ円筒状に形成された絶縁容
器2と、この両端に封止金具3a、3bを介して設けた
金属性の蓋体4a、4bとで真空気密に構成されてい
る。遮断室1内には、導電棒5、6の対向する端部に取
付けられた1対の電極7、8が配設され、上部の電極7
を固定電極、下部の電極8を可動電極としている。ま
た、この可動電極8の電極棒6には、ベローズ9が取付
けられ遮断室1内を真空気密に保持しながら可動電極8
の軸方向の移動を可能にしている。このベローズ9上部
には金属性のアークシールド10が設けられ、ベローズ
9がアーク蒸気で覆われることを防止している。また、
11は、前記電極7、8を覆うようにして遮断室1内に
設けられた金属性のアークシールドであり、絶縁容器2
がアーク蒸気で覆われることを防止している。さらに、
電極8は、図2に拡大して示すように、導電棒6にロウ
付部12によって固定されるか、又は、かしめによって
圧着接続されている。接点13aは、電極8にロウ付け
14で固着されている。なお、図1における13bは固
定側接点である。本実施例で製造された接点合金は、上
記したような接点13a、13bの双方又は何れか一方
を構成するのに適したものである。次に、本発明の作用
を上記各工程に則して説明する。In FIG. 1, reference numeral 1 denotes a shut-off chamber. The shut-off chamber 1 is formed of an insulating container 2 made of an insulating material in a substantially cylindrical shape, and a metallic material provided at both ends thereof through sealing fittings 3a and 3b. And the lids 4a and 4b are airtight. A pair of electrodes 7, 8 attached to opposing ends of the conductive rods 5, 6 are disposed in the shut-off chamber 1, and an upper electrode 7 is provided.
Is a fixed electrode, and the lower electrode 8 is a movable electrode. A bellows 9 is attached to the electrode rod 6 of the movable electrode 8, and the movable electrode 8 is held while keeping the inside of the shut-off chamber 1 vacuum-tight.
Can be moved in the axial direction. A metal arc shield 10 is provided above the bellows 9 to prevent the bellows 9 from being covered with the arc vapor. Also,
Numeral 11 denotes a metallic arc shield provided in the shut-off chamber 1 so as to cover the electrodes 7 and 8;
Is prevented from being covered with arc vapor. further,
The electrode 8 is fixed to the conductive rod 6 by a brazing portion 12 or is crimp-connected by caulking as shown in an enlarged manner in FIG. The contact 13 a is fixed to the electrode 8 by brazing 14. In addition, 13b in FIG. 1 is a fixed side contact. The contact alloy manufactured in the present embodiment is suitable for forming both or one of the contacts 13a and 13b as described above. Next, the operation of the present invention will be described based on the above steps.
【0037】Cr粉の不純物管理に関し、本発明者ら
は、接点材料を加熱する過程で放出されるガスの総量な
らびに放出の形態について詳細な観察を行ったところ、
これら要因と再点弧現象の発生には重要な相関があり、
特に接点材料を構成する原材料の個々について、これら
ガスの放出、なかでも融点近傍で突発的に発生するガス
の放出を制御することにより、再点弧現象を効果的に抑
制できることを見出した。即ち、接点材料を加熱してい
くと、吸着ガスの殆んどは溶融点以下で脱ガスされ、溶
融点近傍で固溶したガスが放出されるが、さらに溶融点
以上で加熱放置すると、極めて短時間(例えば数ミリ秒
程度)ではあるがパルス的な突発性ガスの放出(数回な
いし数百回突発する)が観察される。With regard to the control of impurities in the Cr powder, the present inventors made detailed observations on the total amount of gas released during the process of heating the contact material and the form of release.
There is an important correlation between these factors and the occurrence of restriking,
In particular, for each of the raw materials constituting the contact material, it has been found that the re-ignition phenomenon can be effectively suppressed by controlling the release of these gases, in particular, the release of the gas suddenly generated near the melting point. That is, as the contact material is heated, most of the adsorbed gas is degassed below the melting point and a solid-dissolved gas is released in the vicinity of the melting point. For a short period of time (for example, on the order of several milliseconds), a pulse-like burst of gas is emitted (several times to hundreds of times).
【0038】これら突発性ガスにはC2 H2 、CH4 等
が若干含まれるが、主体はCO、CO2 、O2 等の酸素
系であることから、これら突発性ガスは接点材料に含ま
れる酸化物の分解により放出されるものと考えられる。Although these sudden gases contain a small amount of C 2 H 2 , CH 4, etc., these sudden gases are contained in the contact material because they are mainly composed of oxygen such as CO, CO 2 , O 2. It is considered to be released by decomposition of the oxides.
【0039】本発明者らの研究によれば、再点弧現象の
多く発生する接点材料には、突発性ガスの放出も多い。
従って上述の知見よりすれば、接点材料をその融点以上
の温度で保持して、この突発性ガスを予め放出させてお
くことにより、再点弧現象の発生を軽減し得ることが考
えられる。According to the study of the present inventors, contact materials in which re-ignition occurs frequently emit a large amount of sudden gas.
Therefore, according to the above findings, it is considered that the occurrence of the re-ignition phenomenon can be reduced by holding the contact material at a temperature equal to or higher than its melting point and releasing the burst gas in advance.
【0040】しかしながら、真空遮断器用接点材料はC
uを相当量含有し、これらの酸化物を分解して除くため
には、たとえば10-3〜10-4Torrの真空度におい
て約1200℃以上の温度が必要となるので、蒸気圧の
高いCu及びAgなどの高導電性材料やBi、Teなど
の溶着防止材料を含む接点材料について上記の様な熱処
理を与えることは成分の変動を招き接点特性の管理の面
で不都合を生ずることがある。However, the contact material for the vacuum circuit breaker is C
In order to contain a considerable amount of u and decompose and remove these oxides, for example, a temperature of about 1200 ° C. or more is required at a degree of vacuum of 10 −3 to 10 −4 Torr. Applying the above-described heat treatment to a contact material containing a highly conductive material such as Ag or a welding prevention material such as Bi or Te may cause fluctuations in components and cause inconvenience in the management of contact characteristics.
【0041】例えば、Cuを加熱して行くと、400〜
550℃近傍で極めて激しく複数種のガスを放出する。
このような放出ガスの一部は、昇温過程にあるCr等と
結合し、比較的安定な化合物を作り溶解作業中に一部は
分解するが、他の一部はなお残存し突発性ガスの一因と
なる。For example, when heating Cu, 400-
At around 550 ° C, it emits several kinds of gases extremely violently.
Some of these released gases combine with Cr and the like in the process of raising the temperature to form relatively stable compounds, some of which decompose during the melting operation, while others remain and remain in a sudden gas. Contributes to
【0042】このような突発性ガスの放出は、例えば純
度99.9999%のCuを原料として使用しても、酸
化あるいはガス吸着が進行する状態で放置しておく場合
にはなお認められる。Even if Cu having a purity of 99.9999% is used as a raw material, such a sudden release of gas is still recognized when the oxidation or gas adsorption is allowed to proceed.
【0043】上述のような観察は、溶着防止材を含む接
点材料において、Cu等の高導電性材料とBi等の溶着
防止成分材とについて個別の熱処理により突発性ガスの
原因とする不純物を予め除いておくことの必要性を示唆
すると共に、接点合金の製造または熱処理過程において
一部または全体が液体状態にある接点合金の液相が直接
接するるつぼ、ボート、板などからの放出ガスにより接
点合金が受ける汚染も管理する必要性を示唆している。The above observations show that, in the contact material including the anti-weld material, the impurities which cause the sudden gas are preliminarily determined by individually heat-treating the highly conductive material such as Cu and the anti-weld component such as Bi. This suggests the necessity of elimination, and in the process of manufacturing or heat-treating the contact alloy, the contact alloy, which is in direct contact with the liquid phase of the contact alloy, which is partially or entirely in a liquid state, is released from the crucible, boat, plate, etc. Suggests the need to control the pollution they receive.
【0044】前者の知見に対して本発明者らは、突発性
ガスの軽減に対し構成元素を個別に熱処理することは、
或る程度有効で、それに伴い再点弧発生確率も減少する
傾向にあることを認めている。In response to the former finding, the present inventors have found that heat treatment of the constituent elements individually to reduce the sudden gas
It is recognized that it is effective to some extent and the probability of restriking tends to decrease accordingly.
【0045】後者の知見に対して本発明者らは液相に接
するるつぼ等の材質及びその表面の物理的化学的状態が
突発性ガス放出形態に影響を与え、かつ再点弧確率にも
関連することを認めると共に特に前者の接点の構成元素
レベルでの管理による突発性ガス放出の軽減効果を後者
によって、確実かつ効率的に向上させるのに必須である
ことを認めた。In response to the latter finding, the present inventors have determined that the material of the crucible or the like in contact with the liquid phase and the physical and chemical state of the surface affect the form of sudden gas release, and are also related to the reignition probability. In addition, it was recognized that the former is indispensable for reliably and efficiently improving the effect of reducing sudden gas emission by controlling the contact elements at the component element level.
【0046】上記した再点弧に対する二三の知見は、そ
の軽減化に対して有効であるが、より一層の再点弧の軽
減化と大遮断容量化の要求に対しては、尚改善の必要性
を認めると共に上記知見技術効果を効率的に発揮させる
ための他の施策の開発が、望まれる。Although a few findings on the re-ignition are effective in reducing the re-ignition, the improvement is still required in order to further reduce the re-ignition and increase the breaking capacity. There is a need to recognize the necessity and to develop other measures to effectively exert the above-mentioned knowledge and technology effects.
【0047】例えば前記二、三の知見を重畳させてCu
−Cr合金を製作すると、単独のときより効果が大きく
相乗され、従って一連の工程を総合的に管理する必要性
を示唆している。特に原料技術及び冷却技術は、充分把
握する必要がある。即ち、先に示した突発性ガスの原因
の1つとして原料Cr、Cuなどの内容(不純物)、状
態(表面酸化、混在物の有無)が重要と考えられる。For example, by superimposing the above two or three findings,
The production of a -Cr alloy has a greater synergy than when used alone, thus indicating the necessity of comprehensively managing a series of processes. In particular, it is necessary to fully understand the raw material technology and the cooling technology. That is, it is considered that the contents (impurities) and states (surface oxidation, presence / absence of inclusions) of the raw materials Cr, Cu, and the like are important as one of the causes of the sudden gas described above.
【0048】初めから酸化物の形態を持ち、原料粉中に
単に混入している酸化物などの異物については、原料粉
との比重差を利用した沈降法による除去、或いは粒径の
違いを利用し、主として篩いわけで予め除去するか、ス
ケルトン中に高導電性材料を溶浸する際の溶浸工程を一
方向から行うことで前記酸化物などの異物を一カ所に集
めることが出来る。これらの作業を与えることによって
同じく再点弧現象の発生の軽減化に対して好結果を示し
た。Foreign substances such as oxides, which have an oxide form from the beginning and are simply mixed into the raw material powder, are removed by a sedimentation method using a difference in specific gravity from the raw material powder, or a difference in particle size is used. However, foreign substances such as the oxides can be collected in one place by mainly removing them by sieving in advance, or by performing an infiltration step when infiltrating a highly conductive material into the skeleton from one direction. Providing these operations also showed good results in reducing the occurrence of restriking.
【0049】しかし問題は、原料中に固溶或いは析出し
て存在する不純物である。これらは篩いわけ、比重差或
いは溶浸工程では、除去することが出来ず潜在的な再点
弧の一要因を占めていることが考えられた。しかしそれ
でもその解決の一つの手段として原料粉(Cr粉)を十
分吟味し不純物のより少ない原料粉を選択することで再
点弧現象の発生は、より一層軽減化される傾向にあるこ
とを認めた。However, the problem is impurities present as a solid solution or precipitated in the raw material. It was considered that these could not be removed by sieving, specific gravity difference or infiltration process, and accounted for one factor of potential restrike. However, it is still recognized that the occurrence of the re-ignition phenomenon tends to be further reduced by thoroughly examining the raw material powder (Cr powder) and selecting a raw material powder having less impurities as one means of solving the problem. Was.
【0050】このように、不純物(ここでは主として酸
化物)の少ない原料粉の選択は、再点弧現象の軽減に対
して効果は認めたものの厳密な実験を進めると未だ改善
の余地のあることを本発明者らは認めた。As described above, although the selection of the raw material powder having a small amount of impurities (mainly oxides in this case) is effective for reducing the re-ignition phenomenon, there is still room for improvement if strict experiments are carried out. The present inventors have confirmed that
【0051】即ち、Cr粉中の不純物が実質的に認めら
れないロットを選択し、これをCr原料とし、Cuにつ
いても同様に十分吟味したロットを原料として夫々を使
用してCu−Cr合金を製造したにもかかわらず、合金
中に析出物の存在を認めるものと析出物の存在のないも
のとが得られ、これらの再点弧発生頻度を比較したとこ
ろ前者析出物の存在する合金を使った真空バルブに、よ
り多く発生していることが判った。That is, a lot in which impurities in the Cr powder are substantially not recognized is selected, and this is used as a Cr raw material. Similarly, a lot of Cu that has been thoroughly examined is used as a raw material to prepare a Cu—Cr alloy. Despite the production, there were obtained alloys with precipitates and alloys without precipitates.Comparing the frequency of restriking, the alloys with the former were used. It was found that more occurred in the vacuum valve.
【0052】このような析出物は、(イ)Cr粉中に初
めから固溶していた或る種の元素と、(ロ)焼結又は/
及び溶浸中の雰囲気との反応によってあとから生成した
不純物であるとされる。従って再点弧特性の一層の改善
には、(イ)原料に単に混入している酸化物などの不純
物以外に、(ロ)原料中に特に固溶している或種の元素
(固溶状態にあるため顕微鏡的には、一般に検出確認出
来ない)と、原料の内部又は雰囲気から供給される酸素
との反応により生成した酸化物の存在についても注目す
る必要性があることを示唆していると考察された。Such precipitates are formed by (a) certain elements which were initially dissolved in Cr powder and (b) sintered or /
And impurities generated later by the reaction with the atmosphere during infiltration. Therefore, in order to further improve the re-ignition characteristics, (a) besides impurities such as oxides simply mixed in the raw material, (b) certain elements particularly solid-solved in the raw material (solid solution state) Microscopically cannot be detected and confirmed microscopically), indicating that it is necessary to pay attention also to the presence of oxides generated by the reaction with oxygen supplied from the inside of the raw material or from the atmosphere. It was considered.
【0053】このような知見のもとに本発明者らは、先
に、原料Crを粉末化する前に、その原料Crに特定の
処理、即ち予め原料Crを1300℃〜溶融点直下の温
度範囲で加熱処理した後、これを粉末化する技術を実用
化した。このようにして得たCr粉を用いたCr−Cu
接点は再点弧発生の抑制に貢献した。しかしこの技術は
再点弧発生の抑制には効果が大きいものの1300℃〜
溶融点直下という高温度の処理をCrに与えるため、C
rの著しい蒸発による材料損失が大きく、更には製造装
置系の汚染も大きいなど改良を必要としていた。Based on such knowledge, the present inventors first made a specific treatment on the raw material Cr before pulverizing the raw material Cr, that is, the raw material Cr was previously heated to 1300 ° C. to a temperature just below the melting point. After the heat treatment in the range, the technology of pulverizing this was put to practical use. Cr-Cu using the Cr powder thus obtained
The contacts contributed to the suppression of restriking. However, this technique has a great effect on suppressing the occurrence of restriking,
To give Cr a high temperature treatment just below the melting point,
Improvements have been required, such as a large loss of material due to remarkable evaporation of r, and a large contamination of the production equipment system.
【0054】しかし上述した1300℃〜溶融点直下の
温度範囲の加熱処理によって大きな効果が得られている
事実は、前述した考察は材料面からの再点弧の抑制に対
し重要な指針であることには変りない。However, the fact that a great effect has been obtained by the above-mentioned heat treatment in the temperature range of 1300 ° C. to just below the melting point is based on the fact that the above consideration is an important guideline for suppressing restriking from the material side. It does not change.
【0055】また、他の技術として、所定の粒度に粉砕
したCr粉に対し同程度の粒径のカーボンを添加して得
たCr−C混合粉体を前記より低い温度、即ち800〜
1400℃の温度範囲での加熱範囲での加熱処理を与
え、これを所定の粒径に粉砕して得たCr粉を使ってC
r−Cu合金を製造すること、すなわち、カーボン粉を
添加するプロセスを追加することによって再点弧発生を
抑制するのに好ましいCr粉とする技術も開発された。
しかしこの技術も、再点弧の抑制には効果が大きいもの
の、必要とするC(カーボン)の量が粉砕したCrの汚
染の程度に依存するため、実際の工程では多目のCを添
加せざるを得なくなる。従って、抑制効果にばらつきが
見られると共に、必要以上のCの残存は、耐電圧特性の
著しい低下を呈するので好ましくない。As another technique, a Cr-C mixed powder obtained by adding carbon having the same particle size to Cr powder pulverized to a predetermined particle size is cooled to a lower temperature, that is, 800 to
A heat treatment in a heating range in a temperature range of 1400 ° C. is given, and the resulting powder is pulverized to a predetermined particle size.
A technique for producing an r-Cu alloy, that is, a Cr powder preferable for suppressing restriking by adding a process of adding carbon powder has also been developed.
However, this technique is also highly effective in suppressing restriking, but since the required amount of C (carbon) depends on the degree of contamination of the crushed Cr, a large amount of C is added in the actual process. I have to help. Therefore, the suppression effect varies, and more than necessary C remains undesirably, because the withstand voltage characteristic is remarkably reduced.
【0056】以上のように原料の検討によって、所定条
件を備えた原料を選択したとしても未だ充分な再点弧抑
制技術を得るには至っていないことは、一連の総ての工
程を通してCr中の不純物を管理する必要性を示唆して
いる。すなわち、所定条件を備えた選択されたCrを使
ったとしても次の工程である焼結又は/及び溶浸工程
で、Crの表面又は/及び内部が再点弧抑制に対して好
ましくない状態に変化していくことが示唆される。As described above, even if a raw material satisfying the predetermined conditions is selected by the examination of the raw material, it has not yet been possible to obtain a sufficient restrike suppression technique. It suggests the need to control impurities. That is, even if the selected Cr having predetermined conditions is used, the surface or / and the inside of the Cr is unfavorably suppressed in restriking in the next step of sintering and / or infiltration. It is suggested that it changes.
【0057】そこで本発明では、上記のようにCrが好
ましくない状態に変化していくことを阻止又は遅延させ
る手段として、Crの表面に前記した条件を有する保護
層を第1の工程で作り、この保護層の作用によってCr
表面を焼結中の汚染雰囲気から保護している間にCr焼
結体、Cr−Cu焼結体を得る(第2の工程)ことと
し、焼結の進行と共に蒸発量制御しながら最終目標組成
を持つCr、Cr−Cu、スケルトン、Cr−Cu合金
を得る(第3の工程)ものである。Therefore, in the present invention, as a means for preventing or delaying the change of Cr to an undesired state as described above, a protective layer having the above conditions is formed on the surface of Cr in the first step, By the action of this protective layer, Cr
A Cr sintered body and a Cr-Cu sintered body are obtained while protecting the surface from a contaminated atmosphere during sintering (second step), and the final target composition is controlled while controlling the evaporation amount as the sintering progresses. This is to obtain Cr, Cr-Cu, skeleton, and Cr-Cu alloy having the following (third step).
【0058】特に、本発明のポイントは、保護層がCr
表面、Cr−Cu表面に存在している間は、内部は保護
されるが、昇温によってこの保護層が蒸発飛散するよう
なことがあれば、表面は汚染雰囲気にさらされ保護層の
効果は半減する。しかし保護層が蒸発飛散の進行によっ
て、一方ではCr、Cr−Cuは或る程度焼結が始ま
り、汚染雰囲気との直接接触面積は減少し、焼結の一層
の進行によってこの面積は更に減少し、最後、保護層が
蒸発飛散が終了する頃には、直接接触する面積はなくな
り第1の工程でCr表面に付与した保護層の存在による
他の機能への影響は無視できる程度に低くなる。Particularly, the point of the present invention is that the protective layer is made of Cr.
While it is present on the surface and Cr-Cu surface, the inside is protected. However, if this protective layer evaporates and scatters due to a rise in temperature, the surface is exposed to a contaminated atmosphere and the effect of the protective layer is reduced. Halve. However, as the protective layer evaporates and scatters, on the other hand, the sintering of Cr and Cr-Cu to some extent begins, and the area of direct contact with the contaminated atmosphere is reduced, and this area is further reduced by further sintering. Finally, by the time the evaporation of the protective layer is completed, there is no direct contact area, and the effect of the protective layer applied to the Cr surface in the first step on other functions is negligibly low.
【0059】第1の工程において、上記保護層として選
択する高蒸気圧材料は800℃において2×10-7To
rrよりも高い蒸気圧を持つ必要がある。その理由は、
この値より低い材料で保護層を形成すると所定の焼結又
は/溶浸加熱後でも、Crの表面に多量の保護層が残存
し、接触抵抗特性及び耐溶着特性に悪影響をもたらすこ
とになる。In the first step, the high vapor pressure material selected as the protective layer is 2 × 10 −7 To at 800 ° C.
It must have a higher vapor pressure than rr. The reason is,
If the protective layer is formed of a material lower than this value, a large amount of the protective layer remains on the surface of Cr even after predetermined sintering or / infiltration heating, which has an adverse effect on contact resistance characteristics and welding resistance characteristics.
【0060】但しその蒸気圧が800℃において1×1
02 Torrより更に高い蒸気圧を持つ材料であって
は、逆に焼結過程の極く初期の段階で保護層は蒸発飛散
し、実質的に保護層を必要とする時に、保護層がない状
態となり好ましくない。この場合には、Crは加熱中の
雰囲気からの汚染を受け再点弧現象の発生を招く。However, the vapor pressure is 1 × 1 at 800 ° C.
0 2 In the case of a material having a higher vapor pressure than Torr, on the contrary, at the very early stage of the sintering process, the protective layer evaporates and scatters, and when the protective layer is substantially required, the protective layer is eliminated. Not preferred. In this case, Cr receives contamination from the atmosphere during the heating, which causes a re-ignition phenomenon.
【0061】更に、第1の工程において、Crの表面に
付与するべき保護層の厚さは0.05〜5μmの範囲に
あることが必要である。その理由は、0.05μmより
薄い場合には、加熱中の汚染雰囲気から、Crを充分保
護出来ず、結果的に再点弧抑制効果が少ない。これに対
しその厚さが5μmより厚いときには充分な保護は得ら
れるものの、高蒸気圧材料が処理中の炉内、炉壁その他
の部分へ付着する量が多く炉の故障が多くなるのみなら
ず所定の焼結又は/及び溶解工程期間中にCr表面から
完全には取除かれず、わずかに残存したこれら保護層が
耐電圧特性の低下となったり接触抵抗特性の低下の原因
となり好ましくない。Further, in the first step, the thickness of the protective layer to be provided on the surface of Cr needs to be in the range of 0.05 to 5 μm. The reason is that when the thickness is less than 0.05 μm, Cr cannot be sufficiently protected from the contaminant atmosphere during heating, and as a result, the effect of suppressing re-ignition is small. On the other hand, when the thickness is more than 5 μm, sufficient protection can be obtained, but not only the high vapor pressure material adheres to the inside of the furnace, the furnace wall and other parts during processing, but also the failure of the furnace increases. These protective layers which are not completely removed from the Cr surface during the predetermined sintering and / or melting step and slightly remain undesirably cause a decrease in withstand voltage characteristics and a decrease in contact resistance characteristics.
【0062】以上示したように本発明では、主としてC
rの上に保護層を所定条件付着又は皮覆又は合金化させ
るものであってCrは、Cr粉の状態であってもまた、
Cr成形体、CrとCuとの混合粉、CrとCuとの成
形体であっても、問題なく適用が出来るものである。ま
たCr上の保護層は保護作用を必要とする加熱処理初期
及び中期には充分存在し、焼結の進行と共に保護を必要
としなくなる加熱処理終期には蒸発飛散し0.25wt
%以下、更に好ましくは0.01wt%以下残存するよ
う加熱処理の温度、時間、雰囲気に応じて保護層材質
(高蒸気圧材料A)とその厚さを選定することを主旨と
する。As described above, in the present invention, mainly C
r, a protective layer is adhered or covered or alloyed under predetermined conditions, and Cr is in the form of Cr powder,
A Cr compact, a mixed powder of Cr and Cu, or a compact of Cr and Cu can be applied without any problem. In addition, the protective layer on Cr is sufficiently present in the early and middle stages of the heat treatment requiring a protective action, and evaporates and scatters at the end of the heat treatment when the protection is not required with the progress of sintering.
The purpose is to select the material of the protective layer (high-vapor-pressure material A) and its thickness according to the temperature, time and atmosphere of the heat treatment so as to remain at most 0.01% by weight.
【0063】第3の工程において、残存する高蒸気圧材
料Aを0.25wt%以下とする必要がある。その理由
は、この値より多いと残存する高蒸気圧材料Aの影響で
接触抵抗値にばらつきが出ると共に耐電圧特性も劣化す
る。再点弧特性を厳しく管理するには0.01wt%以
下に制限することが好ましい。次に、本実施例に係る接
点合金の製造方法を説明する。In the third step, the amount of the remaining high vapor pressure material A needs to be 0.25% by weight or less. The reason is that if the value is larger than this value, the contact resistance value varies due to the influence of the remaining high vapor pressure material A, and the withstand voltage characteristic also deteriorates. In order to strictly control the restriking characteristic, it is preferable to limit it to 0.01 wt% or less. Next, a method for manufacturing the contact alloy according to the present embodiment will be described.
【0064】高炭素フェロクロムを硫酸に溶解し、これ
を電解又は還元して得た金属Cr板をクラッシャーにて
大きさ約0.5〜2mmの粒に粉砕し粗大の粒状Crと
した。上記粗大な粒状Crを、更に粉砕機にて微粉化し
振動ふるいにて平均粒径1〜250μmのCr粉を採取
し原料Cr粉とした。この原料Cr粉とほぼ同粒径を持
つカーボン粉を、原料Cr粉量に対し50〜30000
ppmの量だけミキサーにて充分混合しCr−C混合粉
体を得た。次いで上記Cr−C混合粉体をブリケットマ
シンにて8トン/cm2 以下の成形圧力で固めCr−C
成形体を得た。更に、Cr−C成形体を真空中(必要に
より水素など非酸化性ガス中)で800℃以上(140
0℃以下)の温度で加熱し脱ガス処理を行い脱ガスCr
塊(脱ガスCrブリケット)を得た。そして、脱ガスC
r塊を再び粉砕機にて好ましくはN2 ガスなど必要によ
り非酸化性雰囲気中で微細化し平均粒径5〜250μm
の脱ガスCr粉とした。A metal Cr plate obtained by dissolving high-carbon ferrochrome in sulfuric acid and electrolyzing or reducing the same was pulverized by a crusher into particles having a size of about 0.5 to 2 mm to obtain coarse granular Cr. The coarse granular Cr was further pulverized by a pulverizer, and a Cr powder having an average particle size of 1 to 250 μm was collected by a vibrating sieve to obtain a raw Cr powder. Carbon powder having substantially the same particle size as the raw material Cr powder is used in an amount of 50 to 30,000 with respect to the amount of the raw material Cr powder.
The mixture was sufficiently mixed by a mixer in an amount of ppm to obtain a Cr-C mixed powder. Next, the Cr-C mixed powder was applied to a briquette machine at 8 ton / cm 2. Hardened with the following molding pressure Cr-C
A molded article was obtained. Further, the Cr-C compact is heated to 800 ° C. or more (140 ° C.) in a vacuum (in a non-oxidizing gas such as hydrogen if necessary).
Degas Cr by heating at a temperature of 0 ° C or less)
A lump (degassed Cr briquette) was obtained. And degas C
The lumps are again refined in a non-oxidizing atmosphere, if necessary, preferably in a non-oxidizing atmosphere such as N 2 gas by a pulverizer.
Degassed Cr powder.
【0065】このようにして得たCr粉の一部を一端を
閉にした石英管に所定量のCrを移し、同時に高蒸気圧
材料AとしてBiを選び、Cr量に対し0.5%のBi
を挿入した後、石英管の他端開口部より石英管の内部を
真空で排気しながら、該他端部を溶融し閉とした。A part of the Cr powder thus obtained was transferred to a quartz tube having one end closed, and a predetermined amount of Cr was transferred. At the same time, Bi was selected as the high vapor pressure material A, and 0.5% of the Cr amount was selected. Bi
Then, while the inside of the quartz tube was evacuated from the other end opening of the quartz tube by vacuum, the other end was melted and closed.
【0066】このようにしてCrとBiの所定量を真空
封入した石英容器全体を例えば少なくとも300〜10
00℃程度に加熱し、Cr表面に高蒸気圧材料Aを均一
に蒸発皮覆した(第1の工程)。In this way, the whole quartz container in which predetermined amounts of Cr and Bi are vacuum-sealed, for example, at least 300 to 10
The material was heated to about 00 ° C., and the high vapor pressure material A was uniformly evaporated on the Cr surface (first step).
【0067】石英管を破壊し、取出したCr粉(Bi皮
覆)をそのままCr粉、Cr成形体の原料として使うか
(Cr試料1)、或いはこのCr粉(及び皮覆)に所定
量のCu又は/及びAgよりなる高導電材料を混合しC
rとCu(Cr試料2)、CrとAg(Cr試料3)混
合粉や成形体に原料として使う。The quartz tube is broken, and the extracted Cr powder (Bi-sheath) is used as it is as a raw material of the Cr powder and the Cr compact (Cr sample 1), or a predetermined amount of Mixing highly conductive material consisting of Cu and / or Ag
r and Cu (Cr sample 2) and Cr and Ag (Cr sample 3) are used as raw materials for mixed powders and compacts.
【0068】Cr表面への高蒸気圧材料Aの皮覆厚さの
制御は、例えば前記石英管中へ封入するCr量とBiの
量の比率を変えることによって容易に変えられる。また
選択した高蒸気圧材料AがBiより蒸気圧の高いGaに
おいては、先のBiの場合の300℃より低い200℃
でも充分皮覆が可能であり、200℃〜800℃が適し
た範囲であるように選択する材料と皮覆する厚さで処理
温度を変え得る。The control of the thickness of the skin of the high vapor pressure material A on the Cr surface can be easily changed, for example, by changing the ratio of the amount of Cr and the amount of Bi sealed in the quartz tube. Further, in the case where the selected high vapor pressure material A is Ga whose vapor pressure is higher than Bi, 200 ° C. lower than 300 ° C. in the case of Bi above.
However, the coating temperature can be varied depending on the material selected and the thickness to be coated so that 200 ° C. to 800 ° C. is a suitable range.
【0069】一方、上述のように石英管中に封入してB
iを皮覆Cr粉を得る方法以外にも、Cr粉表面への保
護層の付着の方法には、例えば電気メッキ、無電解メッ
キ、イオンプレーティング、スパッタリング(Cr試料
4〜7)などによっても容易に得られる。 評価方法 (1)電流特性On the other hand, as described above, B
In addition to the method of obtaining a Cr powder covering i, the method of attaching a protective layer to the surface of the Cr powder includes, for example, electroplating, electroless plating, ion plating, sputtering (Cr samples 4 to 7), and the like. Obtained easily. Evaluation method (1) Current characteristics
【0070】大電流遮断性の優劣は、遮断成功したとき
の電流の大きさ、すなわちその電流の最大値により評価
することができ、この値が大きいほど大電流遮断性に優
れることとなる。接点表面をベーキング、電圧エージン
グ等によりクリーニングして条件を一定にした後、7.
2KV、50Hzで1KAずつ電流を増加しながら遮断
限界時における電流の最大値を測定し、所定の標準値に
対する倍率を遮断倍率として算出した。 (2)再点弧特性The superiority or inferiority of the large current interrupting property can be evaluated by the magnitude of the current when the interruption is successful, that is, the maximum value of the current, and the larger this value is, the more excellent the large current interrupting property is. 6. After cleaning the contact surface by baking, voltage aging, etc. to make the conditions constant,
The maximum value of the current at the cutoff limit was measured while increasing the current by 1 KA at 2 KV and 50 Hz, and the magnification with respect to a predetermined standard value was calculated as the interruption magnification. (2) Restriking characteristics
【0071】径30mm、厚さ5mmの円板状接点片
を、ディマウンタブル形真空バルブに装着し、6KV×
500Aの回路を20,000回遮断した時の再点弧発
生頻度を測定し、2台の遮断器(バルブとして6本)の
ばらつき幅(最大および最小)で示した。接点の装着に
際しては、ベーキング加熱(450℃、30分)のみ行
い、ロウ材の使用ならびにこれに伴う加熱は行わなかっ
た。 (3)接触抵抗特性A disk-shaped contact piece having a diameter of 30 mm and a thickness of 5 mm was mounted on a demountable vacuum valve, and the pressure was 6 KV ×
The frequency of occurrence of restriking when the circuit of 500 A was interrupted 20,000 times was measured and indicated by the variation width (maximum and minimum) of two circuit breakers (six valves). When mounting the contacts, only baking heating (450 ° C., 30 minutes) was performed, and the use of brazing material and the accompanying heating were not performed. (3) Contact resistance characteristics
【0072】接触抵抗特性は、表面荒さを5μmに仕上
げた直径50mmのフラット電極と同じ表面荒さを持つ
曲率半径100Rの凸状電極とを対向させ、両電極を開
閉機構を持つ真空度10-5Torr以下に排気した着脱
可能な真空容器内に取付け1.0kgの荷重及び通電電
流100Aを開閉する。そして両電極間に10Aの交流
を与えたときの電位降下から接触抵抗を求める。なお、
接触抵抗値は測定回路を構成する配線材、開閉器などの
抵抗又は接触抵抗を回路定数として含んだ値である。The contact resistance characteristic is such that a flat electrode having a surface roughness of 5 μm and a diameter of 50 mm is opposed to a convex electrode having a curvature radius of 100R having the same surface roughness, and both electrodes are opened and closed with a degree of vacuum of 10 −5. It is mounted in a detachable vacuum vessel evacuated to Torr or less, and opens and closes a load of 1.0 kg and a current of 100 A. Then, a contact resistance is obtained from a potential drop when an AC current of 10 A is applied between both electrodes. In addition,
The contact resistance value is a value including a resistance or a contact resistance of a wiring member, a switch, or the like forming the measurement circuit as a circuit constant.
【0073】また、接触抵抗の値は、着脱式真空開閉装
置自体の軸部の抵抗1.8〜2.5μΩ、磁界発生用コ
イル部の抵抗5.2〜6.0μΩを含むもので残部が接
点部(接点合金の抵抗、同接触抵抗)値である。The value of the contact resistance includes the resistance of the shaft of the detachable vacuum switchgear itself of 1.8 to 2.5 μΩ and the resistance of the coil for generating the magnetic field of 5.2 to 6.0 μΩ, with the remainder being the rest. This is the contact point value (resistance of the contact alloy, the same contact resistance).
【0074】[0074]
【表1】 [Table 1]
【0075】[0075]
【表2】 実施例1〜3、比較例1〜2[Table 2] Examples 1-3, Comparative Examples 1-2
【0076】先に述べたような条件のCr粉(Cr試料
2)を用意した。(Cr試料2)は、Cr粉にあらかじ
めCr量に対し約10%程度のCuをCrと混ぜたもの
を石英管中に該(Cr+Cu)粉の量に対し約0.3%
のBiを一諸に封入(後のCu溶浸の工程でBiの量は
半分が蒸発する)し(Cr+Cu)表面にBiを付着さ
せ(Cr試料2)とした。A Cr powder (Cr sample 2) under the conditions described above was prepared. (Cr sample 2) was prepared by mixing about 10% of Cu with Cr in a Cr powder in advance with Cr in a quartz tube at about 0.3% with respect to the amount of the (Cr + Cu) powder.
Bi was encapsulated (the amount of Bi evaporates by half in the subsequent Cu infiltration step), and Bi was attached to the (Cr + Cu) surface (Cr sample 2).
【0077】上記(Cr試料2)を真空中約1000℃
で1時間焼結し空隙率が約45〜50容積%のCrスケ
ルトンを作成し、このスケルトンの空隙中に1150℃
でCuを溶浸しCu−50%Cr合金(重量%)を作製
した。得られたCu−50%Cr合金中にはBiが約
0.1〜0.15%含有される。このBiの値を更に少
なくする必要性のあるときには、石英管中に(Cr+C
u)粉と同時に封入するBiの量を調節すれば容易に変
化させることが出来る。The above (Cr sample 2) was heated at about 1000 ° C. in a vacuum.
For 1 hour to form a Cr skeleton having a porosity of about 45 to 50% by volume.
To infiltrate Cu to prepare a Cu-50% Cr alloy (% by weight). The obtained Cu-50% Cr alloy contains about 0.1 to 0.15% of Bi. If it is necessary to further reduce the value of Bi, (Cr + C
u) It can be easily changed by adjusting the amount of Bi to be enclosed together with the powder.
【0078】Biを全然封入しなかった合金が比較例−
1であり、多量に封入したのが後述する比較例−4であ
る。尚、このように多量のBi含有合金は、石英管中に
Biを封入する方法でBiを供給する以外に、溶浸する
ときの溶浸材を純CuでなくCu−Bi合金とするなど
両方からBiを供給することも行なわれる。すなわち本
実施例1〜3及び比較例−2では、石英中に(Cr+C
u)と一諸に封入するBiの量を少しずつ変化させかつ
処理温度を約300℃より適宜選択し、Cr表面上のB
iの厚さを16μm〜0.05μmの間の値に調節し
(比較例−2、実施例1〜3)保護層とし、これを用い
て前述したように1000℃でスケルトンを作製後、1
150℃でCuを溶浸し接点としたものである。該Cr
−Cu合金中に含有残存するBiは、いずれも0.06
〜0.2wt%の間にあり、保護層の厚さと対応してい
た。An alloy in which no Bi was encapsulated was a comparative example.
Comparative Example 4 described below, in which a large amount was sealed. It should be noted that such a large amount of Bi-containing alloy can be obtained by not only supplying Bi by enclosing Bi in a quartz tube but also using a Cu-Bi alloy instead of pure Cu instead of pure Cu. Are also supplied from That is, in Examples 1 to 3 and Comparative Example 2, (Cr + C
u) and the amount of Bi to be encapsulated is gradually changed, and the processing temperature is appropriately selected from about 300 ° C.
The thickness of i was adjusted to a value between 16 μm and 0.05 μm (Comparative Example-2, Examples 1-3) to form a protective layer.
Cu was infiltrated at 150 ° C. to form a contact. The Cr
-Bi remaining contained in the Cu alloy is 0.06
〜0.2 wt%, corresponding to the thickness of the protective layer.
【0079】保護層の全く存在しない比較例−1では、
スケルトン作製時の昇温過程での雰囲気中の微量ガス成
分(多くは酸素)の影響を著しく受け、接触抵抗値の増
大とばらつきが大きく、表面分析によっても主としてC
r2 O3 の存在が見られた。これに応じて再点弧発生頻
度が高くかつサンプル間のバラツキ幅も大であった。こ
の抑止は、保護層の厚さが4〜5μm(実施例−1)か
ら0.05〜0.1μm(実施例−3)の試料まで見ら
れた。しかし保護層の厚さが13〜μmの場合(比較例
−2)では、むしろ保護層成分(この場合Bi)の選択
的、集中的な蒸発による再点弧発生の促進の様子が見ら
れ逆に再点弧は多発の傾向にあり好ましくない。その結
果、保護層の厚さは再点弧頻度及び接触抵抗特性の両観
点から5μm〜0.05μmの範囲が好ましく、0.0
5μmより薄いときには制御が難かしくばらつきの原因
となるので下限の制御量は0.05μmとした。 実施例4〜7In Comparative Example 1 where no protective layer was present,
Due to the influence of trace gas components (mostly oxygen) in the atmosphere during the temperature rise process during skeleton fabrication, the contact resistance increases and varies greatly.
The presence of r 2 O 3 was seen. Accordingly, the frequency of restriking was high and the variation width between samples was large. This suppression was observed in samples having a protective layer thickness of 4-5 μm (Example-1) to 0.05-0.1 μm (Example-3). However, in the case where the thickness of the protective layer is 13 to μm (Comparative Example-2), the occurrence of restriking due to selective and intensive evaporation of the protective layer component (Bi in this case) is rather observed, and conversely. Restriking tends to occur frequently, which is not preferable. As a result, the thickness of the protective layer is preferably in the range of 5 μm to 0.05 μm from the viewpoint of both the frequency of restriking and the contact resistance characteristics,
When the thickness is less than 5 μm, the control is difficult and causes variation, so the lower limit control amount is set to 0.05 μm. Examples 4 to 7
【0080】前記実施例1〜3、比較例2では接点製造
に使う原料Crとしては、Crに対し少量のCuをあら
かじめ混合しておいた(Cr+Cu)粉をCr試料−2
として用いたが、原料Crとしては、これに限ることな
く用いることが出来る。In Examples 1 to 3 and Comparative Example 2, as the raw material Cr used for manufacturing the contact, a Cr (Cu + Cu) powder in which a small amount of Cu was previously mixed with Cr was used as Cr sample-2.
However, the material Cr can be used without limitation.
【0081】すなわち、(Cr試料−1)のようにCr
のみ用いたもの(実施例−6)、Crのみを成形したも
の(実施例−5)でも更には(Cr試料−3)のように
Crに対し少量のCuをあらかじめ混合するのでなくA
gを混合したもの(実施例−7)でも、再点弧発生頻度
及び接触抵抗特性の両者が好ましい値を示した。従って
原料Crは、CrとCuとが混合されたもののみではな
く、成形されたものでもよく、また、Crのみであって
も差しつかえない。 実施例8〜15、比較例3〜4That is, as shown in (Cr sample-1),
In the case of using only Cr (Example-6) and the one in which only Cr was formed (Example-5), a small amount of Cu was not mixed in advance with Cr as in (Cr sample-3), but A
g (Example-7) also showed favorable values in both the frequency of restriking and the contact resistance characteristics. Therefore, the raw material Cr may be not only a mixture of Cr and Cu but also a molded one, or even only Cr. Examples 8 to 15 and Comparative Examples 3 to 4
【0082】前記実施例1〜7、及び比較例−2では、
総て保護層として用いた高蒸気圧元素はBiの例を示し
たが、本発明の効果は保護層としてBiに限定するもの
ではなく、他の類似の蒸気圧を有する元素がその効果を
発揮した。In Examples 1 to 7 and Comparative Example 2,
The high vapor pressure elements used for the protective layer are all exemplified by Bi, but the effect of the present invention is not limited to Bi as the protective layer, and other elements having similar vapor pressure exert their effects. did.
【0083】すなわち、先に使用した(Cr試料2)を
Cr原料粉として採用し、その(Cr+Cu)表面にN
i、Sn、Ag、In、Ga、Mn、Pb、Sb、Z
n、Seの各材料を皮覆した後、同様にこれらを皮覆し
た(Cr+Cu)粉のスケルトンを作製後、Cuを溶浸
しCr−Cu合金を得た。That is, the previously used (Cr sample 2) was adopted as a Cr raw material powder, and the (Cr + Cu) surface was coated with N
i, Sn, Ag, In, Ga, Mn, Pb, Sb, Z
After covering the respective materials of n and Se, a skeleton of (Cr + Cu) powder was formed in the same manner, and Cu was infiltrated to obtain a Cr-Cu alloy.
【0084】同様の評価を実施したところ、前記したS
n〜Znの各元素を皮覆層として有する接点において
は、いずれもが再点弧発生頻度及び接触抵抗特性とも好
ましい範囲にあった(実施例8〜15)。When the same evaluation was carried out,
In the contacts having each of the elements n to Zn as the skin cover layer, the reignition occurrence frequency and the contact resistance characteristics were all within preferable ranges (Examples 8 to 15).
【0085】これに対し保護層としてNiを選んだ接点
では、(Cr+Cu)粉でスケルトンを作製後も、また
溶浸後においても、保護層のNiが全面又は一部の表面
に残存する傾向が見られその結果、一部に接触抵抗が著
しく高い領域が見られた(比較例−3)。On the other hand, in the contact where Ni is selected as the protective layer, the Ni of the protective layer has a tendency to remain on the entire surface or a part of the surface even after the skeleton is made of (Cr + Cu) powder or after infiltration. As a result, a region where the contact resistance was extremely high was partially observed (Comparative Example 3).
【0086】一方、保護層としてSeを選択した接点で
は、(Cr+Cu)粉でスケルトンを作製する際の、加
熱過程のかなり初期の段階でSeが蒸発除去される結
果、加熱雰囲気からの汚染保護の役目をはたすことが出
来ず、表面の一部又は全面が汚染を受ける信号、良質の
スケルトンを得ることが出来ないのみならず、Cuの溶
浸工程においては、Cr−Cu合金中に空孔を生ずる結
果となった。この接点では再点弧の発生が多く全く保護
層が初めから存在しない比較例−1と大差のない値を示
した(比較例−4)。同じ理由で接触抵抗特性も好まし
くない。On the other hand, in the contact where Se is selected as the protective layer, Se is evaporated and removed at a very early stage of the heating process when the skeleton is made of (Cr + Cu) powder, thereby preventing contamination from the heating atmosphere. Not only can not play a role, not only can not obtain a signal, high-quality skeleton that is partially or entirely contaminated surface, in the Cu infiltration process, voids in the Cr-Cu alloy The consequences were: At this contact point, a value that was not much different from that of Comparative Example-1 in which re-ignition occurred frequently and no protective layer was present at all from the beginning was shown (Comparative Example-4). For the same reason, the contact resistance characteristics are also unfavorable.
【0087】従ってこれらの傾向から保護層として適す
る材料は、Snの蒸気圧(800℃において5×10-6
Torr)からZnの蒸気圧の間の材料であるのが好ま
しいことになる。 実施例−16Therefore, a material suitable for the protective layer from these tendencies is a vapor pressure of Sn (5 × 10 −6 at 800 ° C.).
Preferably, the material is between Torr) and the vapor pressure of Zn. Example-16
【0088】前記した実施例1〜15、比較例1〜4の
全てはその接点の製造方法が、Crスレルトンを作製し
た後Cuの溶融点以上にCuを加熱溶融し、Crスケル
トン空隙中にCuを溶浸する方法で作製した例について
示したが、本発明の保護層の効果は、この溶浸法に限る
ことなく、固相焼結法で接点を作製する場合の原料Cr
粉としても適用出来る。In all of Examples 1 to 15 and Comparative Examples 1 to 4 described above, the method of manufacturing the contacts is such that after the Cr skeleton is formed, Cu is heated and melted to a temperature higher than the melting point of Cu, and the Cu skeleton is filled in the voids of the Cr skeleton. The effect of the protective layer of the present invention is not limited to this infiltration method, and the effect of the raw material Cr for producing a contact by a solid phase sintering method is shown.
It can also be applied as a powder.
【0089】すなわち実施例−16では、(Cr試料
2)とほぼ等量のCu粉とを混合後、4トン/cm2 で
成形し、−70℃以下の露点の水素中で、1030℃×
3時間の焼結、再加圧成形し、これを必要回数繰返し接
点とした。その結果は、表に示すように他の実施例と同
等の効果が得られている。 実施例17〜20That is, in Example-16, after mixing (Cr sample 2) and an approximately equivalent amount of Cu powder, 4 tons / cm 2 In hydrogen with a dew point of -70 ° C or less, 1030 ° C ×
Sintering for 3 hours and re-pressing were performed, and this was repeated as many times as necessary. As a result, as shown in the table, the same effect as in the other examples was obtained. Examples 17 to 20
【0090】前記した実施例1〜16、比較例1〜4に
ついては、使用した原料Cr粉は石英管中にCrとBi
を封入し蒸気圧差を利用してCrの表面にBiを付着さ
せたもので述べた(Cr試料1、2、3)。In Examples 1 to 16 and Comparative Examples 1 to 4 described above, the used Cr powder was mixed with Cr and Bi in a quartz tube.
And Cr was attached to the surface of Cr using the difference in vapor pressure (Cr samples 1, 2, and 3).
【0091】しかし原料Cr粉は、これに限ることな
く、Cr表面への保護層の付与は電気メッキ、無電解メ
ッキ、イオンプレーティング、スパッタリング法(Cr
試料4〜7)で行ったものでも同様に使用することが出
来る(実施例17〜20)。 実施例21〜24、比較例5However, the raw material Cr powder is not limited thereto, and the protective layer may be provided on the Cr surface by electroplating, electroless plating, ion plating, sputtering (Cr
Samples 4 to 7) can be used similarly (Examples 17 to 20). Examples 21 to 24, Comparative Example 5
【0092】各原料Cr粉の表面に付与した保護層は、
接点製造時の焼結又は溶浸過程で受ける加熱工程で蒸発
飛散することによって合金中に最終的に残存する保護層
成分の量が決定される。残存するその量は、また接点特
性に影響を及ぼす。例えば焼結又は溶浸終了後、合金中
に残存する。The protective layer provided on the surface of each raw material Cr powder
The amount of the protective layer component finally remaining in the alloy by evaporating and scattering in the heating process received during the sintering or infiltration process at the time of manufacturing the contact is determined. The amount that remains also affects the contact characteristics. For example, after sintering or infiltration is completed, it remains in the alloy.
【0093】保護層成分の量が、7.2wt%の場合の
接点では再点弧が多発すると共に、接触抵抗値もばらつ
きを示した(比較例−5)。再点弧特性及び接触抵抗特
性を配慮すると、残存する保護層成分の量は、0.25
wt%以下(実施例21、22)なら問題がない。従っ
て本発明が対象とする合金は、焼結又は溶浸後の合金中
の保護層成分の量が0.25wt%以下残存するものが
好ましい。また、原料CrがCr−Ti合金、Cr−Z
r合金に対しても同様の効果が得られる(実施例23〜
24) なお本発明は、上記実施例に限定されるものではない。At the contact point when the amount of the protective layer component was 7.2% by weight, re-ignition frequently occurred and the contact resistance value also varied (Comparative Example-5). Considering restriking characteristics and contact resistance characteristics, the amount of the remaining protective layer component is 0.25
There is no problem if it is less than wt% (Examples 21 and 22). Therefore, the alloy targeted by the present invention is preferably one in which the amount of the protective layer component in the alloy after sintering or infiltration remains at 0.25 wt% or less. The raw material Cr is a Cr-Ti alloy, Cr-Z
Similar effects can be obtained for the r alloy (Examples 23 to 23).
24) The present invention is not limited to the above embodiment.
【0094】以上の実施例、比較例に供試したCrはい
ずれもあらかじめ、第1の工程でその表面に蒸着法、メ
ッキ法、スパッタ法などで付着させたが、このように別
工程であらかじめ付着させるのでなく、焼結工程でCr
粉の近傍に保護層となる材料を配置しておくならば、そ
の焼結中の加熱過程で、あたかも前記したあらかじめ付
与させておくのと同じことが行われる。この挙動も本発
明で述べる第1の工程の定義のなかに入る。すなわち焼
結中に保護層の形成と焼結の進行が行われる。このよう
にしても第2、第3の工程は同様に必須な工程である。The Cr used in the above Examples and Comparative Examples was previously deposited on the surface in the first step by vapor deposition, plating, sputtering, or the like. Instead of attaching, Cr
If a material to be a protective layer is placed in the vicinity of the powder, the same process as previously applied is performed in the heating process during the sintering. This behavior is also included in the definition of the first step described in the present invention. That is, the formation of the protective layer and the progress of sintering are performed during sintering. Even in this case, the second and third steps are similarly essential steps.
【0095】本実施例で得られる真空バルブ用合金で
は、接触抵抗特性を安定に維持した上で再点弧の発生率
の低減のみならず各真空バルブ毎の発生率のばらつきも
縮小できた。なお、本発明技術はCu−Cr二元合金の
みならず他の耐弧材料等の第3成分を添加したCu−C
r系合金においても同様な効果を示すことは明白であ
る。In the alloy for a vacuum valve obtained in this example, not only the occurrence rate of restriking was reduced but also the variation in the occurrence rate of each vacuum valve was reduced while maintaining the contact resistance characteristics stably. It should be noted that the technology of the present invention is not limited to Cu-Cr binary alloys, but also to Cu-C
It is clear that a similar effect is exhibited in the r-based alloy.
【0096】[0096]
【発明の効果】上記実施例の結果からも理解されるよう
に、本発明に係る真空バルブ用接点合金の製造方法は、
得られる接点合金の接触抵抗特性が安定しかつ再点弧発
生頻度が著しく低減する点および遮断性能が向上する点
で極めて優れている。As will be understood from the results of the above embodiments, the method for producing a contact alloy for a vacuum valve according to the present invention is as follows.
The contact alloy obtained is extremely excellent in that the contact resistance characteristics are stable, the frequency of occurrence of restriking is significantly reduced, and the breaking performance is improved.
【図1】本発明に係る真空バルブ用接点合金の製造方法
の実施例で製造された接点合金が適用される真空バルブ
の一例を示す断面図。FIG. 1 is a cross-sectional view showing an example of a vacuum valve to which a contact alloy manufactured by an embodiment of a method for manufacturing a contact alloy for a vacuum valve according to the present invention is applied.
【図2】図1における接点部の拡大断面図である。FIG. 2 is an enlarged sectional view of a contact portion in FIG.
13a…可動側接点、13b…固定側接点。 13a: movable side contact, 13b: fixed side contact.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01H 33/66 H01H 33/66 B (72)発明者 関口 薫旦 神奈川県横浜市磯子区新杉田町8番地 株式会社東芝 横浜事業所内 (72)発明者 馬島 淑子 神奈川県横浜市磯子区新杉田町8番地 株式会社東芝 横浜事業所内 (58)調査した分野(Int.Cl.6,DB名) B22F 3/10 B22F 1/02 B22F 3/26 C22C 1/04 H01H 11/04 H01H 33/66 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI H01H 33/66 H01H 33/66 B (72) Inventor Kadan 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Toshiba Corporation Yokohama Business In-house (72) Inventor Yoshiko Majima 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Toshiba Corporation Yokohama Office (58) Field surveyed (Int.Cl. 6 , DB name) B22F 3/10 B22F 1/02 B22F 3 / 26 C22C 1/04 H01H 11/04 H01H 33/66
Claims (6)
体、Crと導電材料となるCuとの混合粉、CrとCu
との成形体の表面の一部又は全面に、略800℃で2×
10-7Torrよりも高い蒸気圧を有する高蒸気圧材料
を保護層として厚さ0.05〜5μmだけ付着、皮覆又
は合金化させた第1の工程と、前記高蒸気圧材料により
加熱中の汚染雰囲気から保護しながら、前記第1の工程
により得られる保護層付材料からCr焼結体、Cr−C
u焼結体を得る第2の工程と、前記第2の工程の期間の
一部又は総てにおいてCr又はCr−Cuの焼結の進行
と共に、残存する前記高蒸気圧材料が0.25重量%以
下になるように焼結の温度、時間、昇温降温の速度、雰
囲気を蒸発量制御しながらCrスケルトン、Cr−Cu
スケルトン、Cr−Cu合金を得る第3の工程を備えた
ことを特徴とする真空バルブ用接点合金の製造方法。1. A raw material Cr powder as an arc-resistant material, a Cr compact, a mixed powder of Cr and Cu as a conductive material, Cr and Cu
2 × at approximately 800 ° C. on part or all of the surface of
A first step in which a high vapor pressure material having a vapor pressure higher than 10 -7 Torr is applied, covered, or alloyed by a thickness of 0.05 to 5 μm as a protective layer, and heating is performed by the high vapor pressure material; From the material with a protective layer obtained in the first step, while protecting from the contamination atmosphere of
u in a second step of obtaining a sintered body, and with the progress of sintering of Cr or Cr—Cu during part or all of the period of the second step, the remaining high vapor pressure material is reduced to 0.25 wt. % While controlling the sintering temperature, time, heating / cooling rate, and atmosphere evaporation amount so that the sintering temperature is less than or equal to%.
A method for producing a contact alloy for a vacuum valve, comprising a third step of obtaining a skeleton and a Cr-Cu alloy.
気圧材料の量が0.01重量%以下となるように蒸発量
制御をしながらCr、Cr−Cuスケルトン、Cr−C
u合金を得ることを特徴とする請求項1記載の真空バル
ブ用接点合金の製造方法。2. In the third step, Cr, Cr—Cu skeleton, Cr—C, while controlling the amount of evaporation so that the amount of the remaining high vapor pressure material becomes 0.01% by weight or less.
The method for producing a contact alloy for a vacuum valve according to claim 1, wherein a u alloy is obtained.
トン又は、Cr−Cuスケルトン中の残存空隙中にCu
を溶浸させてCr−Cu合金を得ることを特徴とする請
求項1または請求項2記載の真空バルブ用接点合金の製
造方法。3. The method according to claim 1, wherein after the third step, Cu remains in the residual vacant space in the Cr skeleton or the Cr—Cu skeleton.
3. A method for producing a contact alloy for a vacuum valve according to claim 1, wherein a Cr-Cu alloy is obtained by infiltrating the alloy.
Agであることを特徴とする請求項1乃至請求項3記載
のいずれかの真空バルブ用接点合金の製造方法。4. The method for producing a contact alloy for a vacuum valve according to claim 1, wherein a part or all of the conductive material made of Cu is Ag.
Ti、Zrの1つであることを特徴とする請求項1乃至
請求項4記載のいずれかの真空バルブ用接点合金の製造
方法。5. The method of manufacturing a contact alloy for a vacuum valve according to claim 1, wherein a part or all of the arc-resistant material made of Cr is one of Ti and Zr. Method.
n、Bi、Cu、Pb、Sb、Te、Znの群から選ば
れた元素であることを特徴とする請求項1乃至請求項5
記載のいずれかの真空バルブ用接点合金の製造方法。6. The high vapor pressure material is Ga, Ag, I
6. An element selected from the group consisting of n, Bi, Cu, Pb, Sb, Te, and Zn.
A method for producing a contact alloy for a vacuum valve according to any one of the above.
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|---|---|---|---|
| JP4121867A JP2937620B2 (en) | 1992-05-14 | 1992-05-14 | Manufacturing method of contact alloy for vacuum valve |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4121867A JP2937620B2 (en) | 1992-05-14 | 1992-05-14 | Manufacturing method of contact alloy for vacuum valve |
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| Publication Number | Publication Date |
|---|---|
| JPH05311273A JPH05311273A (en) | 1993-11-22 |
| JP2937620B2 true JP2937620B2 (en) | 1999-08-23 |
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| Country | Link |
|---|---|
| JP (1) | JP2937620B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355474B (en) * | 2015-11-20 | 2018-05-25 | 温州宏丰电工合金股份有限公司 | A kind of AgW50 for breaker answers Cu contact materials and preparation method thereof |
| CN110291606B (en) | 2017-02-22 | 2021-11-19 | 三菱电机株式会社 | Contact material, method for producing the same, and vacuum valve |
-
1992
- 1992-05-14 JP JP4121867A patent/JP2937620B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05311273A (en) | 1993-11-22 |
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