JP2939638B2 - Vertical heat treatment equipment - Google Patents
Vertical heat treatment equipmentInfo
- Publication number
- JP2939638B2 JP2939638B2 JP11989690A JP11989690A JP2939638B2 JP 2939638 B2 JP2939638 B2 JP 2939638B2 JP 11989690 A JP11989690 A JP 11989690A JP 11989690 A JP11989690 A JP 11989690A JP 2939638 B2 JP2939638 B2 JP 2939638B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction vessel
- injector
- heat treatment
- processing gas
- vertical heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
「発明の目的」 "Object of the invention"
本発明は、縦型熱処理装置に関するものである。 The present invention relates to a vertical heat treatment apparatus.
【従来の技術とその課題】 半導体ウエハを拡散炉の反応容器内に搬入して加熱処
理を行なう場合、縦方向に所定間隔をおいて多数枚のウ
エハを搭載した処理用ボートを搬出搬入機構を介して反
応容器内に搬入し、この容器内に処理ガスを供給して加
熱処理を実施すようにしている。 この場合、処理ガスを容器内に供給する手段としは、
容器の上方より処理ガスを導入する方法と、容器内にイ
ンジェクタを挿入し、このインジェクタの長さ方向に沿
ってウエハの所定間隔ごとに複数の噴出孔を形成し、こ
の噴出孔より容器内に処理ガスを供給する方法等が知ら
れている。 このうち酸化や拡散における反応容器内にO2、N2を含
んだオキシ塩化りん（POCl3）を導入する場合、この導
入されるPOCl3は腐食性ガスであり、また、この種の反
応容器内は、通常、900〜1200℃程度まで加熱されるた
め、特に次のような条件を必要とされる。 即ち、導入された処理ガスが接触する部分は、耐腐食
性の素材であること、また、酸化拡散処理の高温度の加
熱処理温度に耐えられることが必要である。 そのため、耐熱性で、かつ非金属製の素材として、石
英ガラスが用いられており、上記のインジェクタと反応
容器も一般に石英ガラスで成形されている。 しかし、この反応容器に挿入したインジェクタと反応
容器とのフィッテイングは、シール機能が必要であり、
しかも高温度に耐えられるように金属製の接続部材が使
用されることがあるが、金属製であると、処理ガスによ
り腐食されやすく、弗素樹脂製であると、反応温度であ
る高温度に耐えられるものではなく、上記の条件に満足
したフィッテイングの接続構造の開発が望まれていた。 本発明は、上記の実情に鑑みて開発したものであり、
反応容器内に挿入したインジェクタを反応容器に接続す
る接続部位を高温度の反応温度に影響されることなく、
しかも、処理ガスによる耐腐食性の条件を具備して高精
度な気密接続をすることができる縦型熱処理装置を提供
することを目的としたものである。 「発明の構成」2. Description of the Related Art When a semiconductor wafer is carried into a reaction vessel of a diffusion furnace for heat treatment, a processing boat carrying a large number of wafers at predetermined intervals in a vertical direction is provided with a carry-in / out mechanism. Then, it is carried into a reaction vessel through which a processing gas is supplied to perform heat treatment. In this case, as means for supplying the processing gas into the container,
A method of introducing a processing gas from above the container, inserting an injector into the container, forming a plurality of ejection holes at predetermined intervals of the wafer along the length direction of the injector, and entering the inside of the container from the ejection holes. A method for supplying a processing gas is known. When introducing phosphorus oxychloride (POCl 3 ) containing O 2 and N 2 into a reaction vessel for oxidation or diffusion, the introduced POCl 3 is a corrosive gas, and this kind of reaction vessel Since the inside is usually heated to about 900 to 1200 ° C., the following conditions are particularly required. That is, it is necessary that the portion where the introduced processing gas comes into contact is made of a corrosion-resistant material and that it can withstand the high temperature heat treatment temperature of the oxidation diffusion treatment. Therefore, quartz glass is used as a heat-resistant and non-metallic material, and the above-described injector and reaction vessel are generally formed of quartz glass. However, the fitting between the injector inserted into the reaction vessel and the reaction vessel requires a sealing function,
In addition, metal connection members are sometimes used to withstand high temperatures. However, if they are made of metal, they are easily corroded by the processing gas, and if they are made of fluororesin, they can withstand the high reaction temperature. However, it has been desired to develop a fitting connection structure satisfying the above conditions. The present invention has been developed in view of the above circumstances,
The connection part connecting the injector inserted into the reaction vessel to the reaction vessel is not affected by the high reaction temperature,
Moreover, it is another object of the present invention to provide a vertical heat treatment apparatus capable of performing high-precision hermetic connection with a condition of corrosion resistance due to a processing gas. "Configuration of the Invention"
上記の目的を達成するため、本発明は、複数の被処理
体を反応容器内に縦方向に配列し、処理ガスが接触する
部分を耐熱性非金属製反応容器で構成した縦型熱処理装
置において、上記反応容器の反応容器壁を外側に一体に
突出させて突出筒部を形成し、この突出筒部から当該容
器内の被処理体に処理ガスを供給するインジェクタを挿
入すると共に、上記反応容器内の反応温度より低温域で
ある突出筒部の先端位置をフィッティングでインジェク
タと気密接続させた縦型熱処理装置にあり、この気密接
続手段として弗素樹脂製のフィッテイングで接続するこ
とが好ましい。In order to achieve the above object, the present invention provides a vertical heat treatment apparatus in which a plurality of objects to be processed are arranged in a vertical direction in a reaction vessel, and a portion to be contacted with a processing gas is formed of a heat-resistant nonmetallic reaction vessel. A projecting tube portion is formed by integrally projecting a reaction vessel wall of the reaction vessel outwardly, and an injector for supplying a processing gas from the projecting cylinder portion to a target object in the vessel is inserted, and the reaction vessel It is in a vertical heat treatment apparatus in which the tip position of the protruding cylindrical portion, which is lower than the reaction temperature in the inside, is air-tightly connected to the injector by fitting.
従って、本発明によると、多数枚の被処理体を搭載し
た処理用ボートを搬入搬出機構により反応容器に搬入
し、反応容器内に挿入したインジェクタより処理ガスを
供給すると、容器内のインジェクタより被処理体の所定
間隔ごとに処理ガスが供給されて被処理体は断面均熱状
態に加熱処理され、被処理体は酸化や拡散される。 この場合、反応容器壁の気密封止部を外側に突出させ
て反応温度より低温位置で反応容器壁とインジェクタと
を、例えば弗素樹脂製のフィッテイングで接続したの
で、この接続位置は、反応容器内の反応温度、例えば90
0〜1200℃程度より低温、例えば200℃以下まで低い温度
の位置で接続されているため、この弗素樹脂製フィッテ
イングは高温度に影響されることなく、密封機能を確実
に発揮すると共に、弗素樹脂製であるため、処理ガスに
よる腐食にも影響されることなく、高精度に気密接続を
保持することが可能となる。Therefore, according to the present invention, when a processing boat loaded with a large number of objects to be processed is loaded into the reaction vessel by the loading / unloading mechanism, and the processing gas is supplied from the injector inserted into the reaction vessel, the processing gas is injected from the injector in the vessel. A processing gas is supplied at predetermined intervals of the processing object, and the processing object is subjected to heat treatment in a cross-section soaking state, and the processing object is oxidized and diffused. In this case, the hermetic sealing portion of the reaction vessel wall is protruded outward, and the reaction vessel wall and the injector are connected at a position lower than the reaction temperature by, for example, a fitting made of a fluorine resin. Reaction temperature within, for example, 90
Since the connection is made at a temperature lower than about 0 to 1200 ° C., for example, at a temperature lower than 200 ° C. or less, the fluorine resin fitting reliably exhibits a sealing function without being affected by a high temperature and has a fluorine content. Since it is made of resin, it is possible to maintain the airtight connection with high accuracy without being affected by corrosion due to the processing gas.
以下、本発明を半導体ウエハの酸化・拡散を行う縦型
熱処理装置に適用した実施例につき図面を参照して具体
的に説明する。 第１図において、反応容器１は、石英ガラスにより円
筒状に形成され、その軸方向を垂直方向とすることによ
り縦型熱処理部を構成している。 この反応容器１の反応容器壁２の下方位置に、容器壁
２から外側に突出させて一体に形成した突出筒部３を気
密封止部とする。 この突出筒部３より石英ガラスで形成した先端を密封
した細管状のインジェクタ４を挿入する。このインジェ
クタ４は略Ｌ字形状に形成され、反応容器１内に本体4a
を縦方向に沿って立設し、曲部4bを突出筒部３内に挿入
し、かつ突出筒部３内に設けた石英ガラス製の円弧状の
受け部５を設け、この受け部５上にインジェクタ４の曲
部4bを支受けさせてインジェクタ４を位置決めするよう
にしている。更に、このインジェクタ４の本体4aには、
多数の噴出孔６を形成しており、この噴出孔６は、処理
用ボ一ト７に縦方向に所定間隔をおいて搭載した多数枚
の半導体ウエハ８の所定間隔毎に形成して、各半導体ウ
エウハ８に対して均一に処理ガスがドーピングされるよ
うに構成している。 このインジェクタ４から反応容器１内に供給される処
理ガスは、O2、N2を含んだオキシ塩化りん（POCl3）を
導入してウエハ８にりんドープ膜の形成を行なうように
しており、この導入されるPOCl3は腐食性ガスであり、
また、反応容器１の周囲にはヒータ９を設け、反応容器
１内を、通常、900〜1200℃程度まで加熱して、酸化や
拡散処理を実施するようにしている。 更に、反応容器１の下部には排気管10を設け、この排
気管10より反応容器１内に導入した処理ガスを廃棄可能
に設けている。 この反応容器１内に搬入してバッチ処理するため、処
理用ボート７を図示しない搬入搬出機構を介して搬入
し、ボート７に搭載した半導体ウエハ８を酸化や拡散処
理を行なうようにしている。 上記反応容器壁２の気密封止部を外側に突出させて形
成した突出筒部３の先端位置は、反応容器１内の反応温
度（例えば900〜1200℃程度に加熱処理されている）よ
り低温位置、例えば200℃以下にまで降温されているの
で、この低温位置で、第２図に示す弗素樹脂製のフィッ
テイング11を接続する。 同図における各部材を弗素樹脂製で形成したフィッテ
イング11の構造は、筒状本体12の両端外周におねじ部12
a、12aを設け、かつ両端内周面にテーパ部12b、12bを形
成し、筒状本体12のおねじ部12a、12aにナット13、14を
螺合し、このナット13、14を螺合することにより、テー
パ部12b、12bに当接させて緊密に密封するスリーブ15、
16を内蔵している。このフィッテイング11は上記の例に
限ることなく、気密封止部を気密接続できる手段であれ
ば如何なる構造の接続手段でもよい。 また、図中、17は反応容器１の開口部を密閉する環状
密閉部、18は保温筒、19は処理用ボート７を回転するた
めの駆動モータ、20はベルト21を介して回転駆動する回
転軸である。 次に上記実施例の作用を説明する。 多数枚の半導体ウエハ８を搭載した処理用ボート７を
搬入搬出機構により反応容器１内に搬入し、反応容器１
内に挿入したインジェクタ４よりPOCl3を供給すると、
容器１内のインジェクタ４より半導体ウエハ８の所定間
隔ごとに処理ガスが供給されて多数枚のウエハ８は均熱
状態で加熱処理され、ウエハ８には、りんドープ膜が形
成される。この場合、反応容器壁２の気密封止部を外側
に突出させて反応温度より低温位置で反応容器壁２とイ
ンジエクタ４とを、弗素樹脂製のフィッテイング11を接
続位置に挿入してナット13、14を締め付けて接続する
と、この接続位置は、反応容器内の反応温度である900
〜1200℃程度から200℃以下まで低い温度になっている
から、この弗素樹脂製フィッテイング11は反応温度の高
温度に影響されることなく、密封機能を確実に発揮する
と共に、弗素樹脂製であるため、POCl3の処理ガスによ
る腐食にも影響されることがない。 ［発明の効果」 以上のことから明らかなように、本発明によると反応
容器の反応容器壁を外側に一体に突出させて突出筒部を
形成し、この突出筒部から当該容器内の被処理体に処理
ガスを供給するインジェクタを挿入し、反応容器内の反
応温度より低温域である突出筒部の先端位置とインジェ
クタとを接続できるため、耐熱性と耐食性を有するフィ
ッティングで当該位置を確実に気密接続でき、高精度な
気密接続を可能とした縦型熱処理装置を提供することが
できる等の効果がある。Hereinafter, an embodiment in which the present invention is applied to a vertical heat treatment apparatus for oxidizing and diffusing a semiconductor wafer will be specifically described with reference to the drawings. In FIG. 1, a reaction vessel 1 is formed in a cylindrical shape from quartz glass, and its vertical axis is the vertical direction to constitute a vertical heat treatment section. A protruding cylindrical portion 3 integrally formed by protruding outward from the vessel wall 2 below the reaction vessel wall 2 of the reaction vessel 1 is defined as an airtightly sealed portion. A thin-tube injector 4 made of quartz glass and having a sealed end is inserted from the protruding cylindrical portion 3. The injector 4 is formed in a substantially L-shape, and a main body 4a is
Is set up along the longitudinal direction, the curved portion 4b is inserted into the protruding tube portion 3, and an arc-shaped receiving portion 5 made of quartz glass provided in the protruding tube portion 3 is provided. The injector 4 is positioned by supporting a curved portion 4b of the injector 4 on the other side. Further, the main body 4a of the injector 4 includes:
A large number of ejection holes 6 are formed, and the ejection holes 6 are formed at predetermined intervals of a large number of semiconductor wafers 8 mounted on the processing boat 7 at predetermined intervals in the vertical direction. The semiconductor wafer 8 is configured to be uniformly doped with the processing gas. The processing gas supplied from the injector 4 into the reaction vessel 1 introduces phosphorus oxychloride (POCl 3 ) containing O 2 and N 2 to form a phosphorus-doped film on the wafer 8. This introduced POCl 3 is a corrosive gas,
Further, a heater 9 is provided around the reaction vessel 1, and the inside of the reaction vessel 1 is usually heated to about 900 to 1200 ° C. to perform oxidation and diffusion treatment. Further, an exhaust pipe 10 is provided below the reaction vessel 1, and the processing gas introduced into the reaction vessel 1 from the exhaust pipe 10 is disposed so as to be discardable. In order to carry in the reaction vessel 1 and perform batch processing, the processing boat 7 is carried in via a carry-in / carry-out mechanism (not shown), and the semiconductor wafer 8 mounted on the boat 7 is oxidized or diffused. The tip position of the protruding cylindrical portion 3 formed by protruding the hermetic sealing portion of the reaction vessel wall 2 outward is lower than the reaction temperature in the reaction vessel 1 (for example, a heat treatment at about 900 to 1200 ° C.). Since the temperature has been lowered to a position, for example, 200 ° C. or less, the fitting 11 made of a fluororesin shown in FIG. 2 is connected at this low temperature position. The structure of the fitting 11 in which each member shown in FIG.
a, 12a are provided, and tapered portions 12b, 12b are formed on both inner peripheral surfaces, and nuts 13, 14 are screwed into the external threaded portions 12a, 12a of the cylindrical main body 12, and the nuts 13, 14 are screwed together. By doing so, the sleeve 15, which comes into contact with the tapered portions 12b, 12b and tightly seals,
16 built-in. The fitting 11 is not limited to the above example, and may be a connecting means having any structure as long as it is a means capable of hermetically connecting the hermetic sealing portion. In the figure, reference numeral 17 denotes an annular sealing portion for closing the opening of the reaction vessel 1, reference numeral 18 denotes a heat insulating cylinder, reference numeral 19 denotes a drive motor for rotating the processing boat 7, and reference numeral 20 denotes a rotary drive via a belt 21. Axis. Next, the operation of the above embodiment will be described. A processing boat 7 on which a large number of semiconductor wafers 8 are mounted is carried into the reaction vessel 1 by a carry-in / carry-out mechanism.
When POCl 3 is supplied from the injector 4 inserted in the
A processing gas is supplied from the injector 4 in the container 1 at predetermined intervals of the semiconductor wafers 8, and a large number of the wafers 8 are heated in a uniform temperature state, and a phosphorus-doped film is formed on the wafers 8. In this case, the hermetic sealing portion of the reaction vessel wall 2 is protruded outward, and the reaction vessel wall 2 and the injector 4 are inserted at a position lower than the reaction temperature by inserting the fitting 11 made of fluororesin into the connection position. , 14 are tightened and connected, this connection position is the reaction temperature 900 in the reaction vessel.
Since the temperature is as low as ~ 1200 ° C to 200 ° C or less, this fluororesin fitting 11 can reliably exhibit a sealing function without being affected by the high reaction temperature, and can be made of fluororesin. Therefore, it is not affected by the corrosion by the processing gas of POCl 3 . [Effects of the Invention] As is clear from the above description, according to the present invention, the reaction vessel wall of the reaction vessel is integrally protruded outward to form a protruding cylindrical portion, and the processing target in the vessel is formed from the protruding cylindrical portion. Insert the injector that supplies the processing gas to the body and connect the injector to the tip position of the protruding cylindrical portion that is at a lower temperature than the reaction temperature in the reaction vessel. It is possible to provide a vertical heat treatment apparatus capable of airtight connection and high-precision airtight connection.
第１図は本発明における縦型熱処理装置の一実施例を示
した正面図、第２図は同上におえるインジェクタと反応
容器壁の接続部分を示した一部拡大断面図、第３図は第
２図のＡ−Ａ拡大断面図である。 １……反応容器 ２……反応容器壁 ３……突出筒部 ４……インジェクタ ７……処理用ボート ８……半導体ウエハ 11……フィッテイングFIG. 1 is a front view showing an embodiment of a vertical heat treatment apparatus according to the present invention, FIG. 2 is a partially enlarged sectional view showing a connection portion between an injector and a reaction vessel wall, and FIG. FIG. 2 is an enlarged sectional view taken along line AA of FIG. 2. DESCRIPTION OF SYMBOLS 1 ... Reaction container 2 ... Reaction container wall 3 ... Projecting cylinder part 4 ... Injector 7 ... Processing boat 8 ... Semiconductor wafer 11 ... Fitting
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/22 511 H01L 21/205 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/22 511 H01L 21/205
Claims (1)
列し、処理ガスが接触する部分を耐熱性非金属製反応容
器で構成した縦型熱処理装置において、上記反応容器の
反応容器壁を外側に一体に突出させて突出筒部を形成
し、この突出筒部から当該容器内の被処理体に処理ガス
を供給するインジェクタを挿入すると共に、上記反応容
器内の反応温度より低温域である突出筒部の先端位置を
フィッティングでインジェクタと気密接続させたことを
特徴とする縦型熱処理装置。1. A vertical heat treatment apparatus in which a plurality of objects to be processed are vertically arranged in a reaction vessel, and a portion to be contacted with a processing gas is constituted by a heat-resistant nonmetallic reaction vessel. A wall is integrally formed so as to protrude outward to form a protruding cylindrical portion, and an injector for supplying a processing gas to the object to be processed in the container is inserted from the protruding cylindrical portion, and a region having a temperature lower than the reaction temperature in the reaction container. A vertical heat treatment apparatus characterized in that the tip of the protruding cylindrical portion is hermetically connected to the injector by fitting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11989690A JP2939638B2 (en) | 1990-05-11 | 1990-05-11 | Vertical heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11989690A JP2939638B2 (en) | 1990-05-11 | 1990-05-11 | Vertical heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0417326A JPH0417326A (en) | 1992-01-22 |
| JP2939638B2 true JP2939638B2 (en) | 1999-08-25 |
Family
ID=14772908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11989690A Expired - Lifetime JP2939638B2 (en) | 1990-05-11 | 1990-05-11 | Vertical heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2939638B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
| CN1072480C (en) * | 1995-08-15 | 2001-10-10 | 都培双 | Iodine compensation tooth paste and its making method |
-
1990
- 1990-05-11 JP JP11989690A patent/JP2939638B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0417326A (en) | 1992-01-22 |
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