JP2943001B2 - Joining method of nitride ceramics - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for bonding nitride-based ceramics having excellent bonding strength. [Prior Art] Conventionally, a method for bonding nitride-based ceramics is Ti And a brazing material (Ag-Cu-based, Ni-Cu-based, etc.) containing an active metal such as Zr or the like, and heated in a vacuum to a temperature equal to or higher than the melting point of the brazing material.

It is said that this bonding principle is due to the fact that the nitride ceramics and the active metal react with each other to improve the leakage.

[Problems to be solved by the invention]

Conventional methods, although the bonding strength compared with other joining methods high, for example if the material strength by joining silicon nitride to each other of 100 kg / mm ^2, in that the bonding strength of about 40 kg / mm ^2, the material strength 40 %, And the characteristics of the ceramic material could not be fully utilized.

[Means for solving the problem]

The inventors have conducted research to bring the joining strength close to the material strength of the ceramic itself. As a result, the joint surface of the nitride-based ceramics was subjected to nitrogen ion implantation beforehand to increase the joining strength of the active metal-containing brazing material. And completed the present invention.

That is, the present invention provides a method for joining nitride-based ceramics, which comprises, before joining nitride-based ceramics with an active metal-containing brazing material, implanting nitrogen ions in advance in a joint surface of the nitride-based ceramics. It is.

(Nitride Ceramics) The bonding method of the present invention can be generally applied to Si ₃ N ₄ , AlN, sialon, and other materials conventionally used as nitride ceramics.

(Ion Implantation) Injection (ion implantation) of nitrogen ions into the joint surface of the nitride-based ceramics is performed by using an ion implantation apparatus used for nitrogen implantation on a metal surface.

The amount of ion implantation can not be limited because the optimum amount varies depending on the type of nitride ceramics and sintering aid, etc.
A range of about 10 ¹³ to 10 ¹⁸ ions / cm ² is preferred. If the amount of ion implantation is too small, the adhesive effect is reduced, and too much ceramic is easily broken.

(Brazing material and joining method) The brazing material used for joining is an active metal-containing brazing material conventionally used for joining of nitride ceramics.
A commercially available product such as Ti-Ag-Cu or Ti-Ni-Cu is used, and a conventionally known bonding material such as laminating a silver brazing foil and a Ti foil is used.

The brazing material is usually 50 to 10 degrees below the liquidus temperature of the active brazing material.
The substrate is heated at a high temperature of 0 ° C. for several minutes to several hours under a vacuum of 1 × 10 ⁻⁴ Torr or less or in an atmosphere of an inert gas such as Ar or He.

[Action]

Regarding the effect of the nitrogen implantation treatment on the joint surface in brazing the nitride ceramics in the present invention, the effect is not necessarily clear, but it is considered as follows.

That is, for example, when Si ₃ N ₄ is joined using a Ti-containing solder, a reaction of Si ₃ N ₄ +9 Ti → ₄ TiN + Si ₃ Ts ₅ occurs, and it is known that this reaction improves the leakiness and performs the joining. I have.

However, Si ₃ Ti ₅ produced by the above formula has low strength,
And it is said that it is brittle, and it is considered that when formed in a large amount, the bonding strength decreases.

On the other hand, in the present invention, Ti reacts preferentially with the implanted nitrogen, the generation of Si ₃ Ti ₅ accompanying the decomposition of Si ₃ N ₄ is suppressed, and as a result, the decrease in bonding strength due to Si ₃ Ti ₅ is small. ,
It is estimated that the joining strength is improved as compared with the case where nitrogen implantation is not performed.

〔Example〕

Examples Si ₃ N ₄ , Sialon and AlN of Japan Ceratech Co., Ltd.
A 4 × 5 × 20 mm sample was prepared using
10 ¹⁶ ions / cm ² of nitrogen were implanted at a particle energy of. Using Ti-Ag-Cu brazing (manufactured by Tanaka Kikinzoku Co., Ltd.) as the active brazing material, the same ceramics were joined to each other.

Each of the obtained joined bodies was processed into a shape of 3 × 4 × 40 mm so that the joining surface was in the middle, and the JIS-
A bending test was performed according to R-1601. The results are shown in Table 1.

Comparative Example The same operation as in the example was performed except that nitrogen was not injected. The results are shown in Table 1.

[Effects of the Invention] According to the present invention, the strength of a nitride-based ceramics joined body has been improved, and it has become possible to use as a joined body even a part which could not be used due to its low joining strength.

Continuation of front page (58) Field surveyed (Int.Cl. ⁶ , DB name) C04B 37/00 C04B 41/80

Claims (1)

(57) [Claims] 1. A method for joining nitride ceramics, comprising: before joining nitride ceramics using an active metal-containing brazing material, implanting nitrogen ions in advance into a joint surface of the nitride ceramics. .