JP2960132B2 - Capacitor and method of manufacturing the same - Google Patents
Capacitor and method of manufacturing the sameInfo
- Publication number
- JP2960132B2 JP2960132B2 JP24045190A JP24045190A JP2960132B2 JP 2960132 B2 JP2960132 B2 JP 2960132B2 JP 24045190 A JP24045190 A JP 24045190A JP 24045190 A JP24045190 A JP 24045190A JP 2960132 B2 JP2960132 B2 JP 2960132B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- barium titanate
- capacitor
- anode
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Ceramic Capacitors (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はチタン酸バリウム誘電体薄膜を形成したコン
デンサおよびその製造方法に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitor formed with a barium titanate dielectric thin film and a method for manufacturing the same.
従来の技術 従来、チタン酸バリウム誘電体を有するコンデンサに
は、酸化チタン、酸化バリウム粉末などの原料を用いて
成形、焼成工程を経て製造される磁器コンデンサが一般
に広く使用されている。またチタン・アルミニウム合金
箔を用いてエッチング工程を経て製造される電解コンデ
ンサも検討されている。その他最近電子ビーム加熱蒸着
法、スパッタリング法、化学的気相成長法などにより誘
電体薄膜を形成する方法が検討されている。2. Description of the Related Art Conventionally, as a capacitor having a barium titanate dielectric, a porcelain capacitor manufactured through a molding and firing process using a raw material such as titanium oxide or barium oxide powder is generally widely used. Also, an electrolytic capacitor manufactured through an etching process using a titanium-aluminum alloy foil has been studied. In addition, recently, a method of forming a dielectric thin film by an electron beam heating evaporation method, a sputtering method, a chemical vapor deposition method, or the like has been studied.
発明が解決しようとする課題 上述の磁器コンデンサおよび電解コンデンサにおいて
は、各々コンデンサの性能と大きさに限界があり、また
上述の誘電体薄膜の形成方法も、工業的に実施できるま
でには至っていない。Problems to be Solved by the Invention In the above-mentioned porcelain capacitor and electrolytic capacitor, there are limits to the performance and size of each capacitor, and the above-mentioned method of forming a dielectric thin film has not yet been industrially implemented. .
課題を解決するための手段 本発明は上述の課題を解決するもので、陰・陽両極を
備えた大強度パルスイオンビーム発生部と、チタン酸バ
リウムターゲットを有する薄膜形成部とからなる大強度
パルスイオンビーム発生装置を用い、真空中で、高電圧
短パルスを陽極に加えて形成される陽極プラズマ中のイ
オンを陽極−陰極ギャップの高電界によって加速し、陰
極Vane（羽）の間を通過する大強度パルスイオンビーム
をチタン酸バリウム（BaTiO3）ターゲットに照射させ
て、高温、高密度プラズマを生成させ、該プラズマを金
属または誘電体上に堆積させチタン酸バリウム誘電体薄
膜を形成することを特徴とするコンデンサの製造方法で
ある。Means for Solving the Problems The present invention solves the above-mentioned problems, and comprises a high-intensity pulse comprising a high-intensity pulsed ion beam generator having both negative and positive poles and a thin-film forming unit having a barium titanate target. Using an ion beam generator, ions in the anode plasma formed by applying a high-voltage short pulse to the anode in a vacuum are accelerated by a high electric field in the anode-cathode gap, and pass between the cathode Vane (wings). Irradiating a barium titanate (BaTiO 3 ) target with a high-intensity pulsed ion beam to generate high-temperature, high-density plasma and depositing the plasma on a metal or dielectric to form a barium titanate dielectric thin film This is a method for manufacturing a capacitor characterized by the following.
また上記チタン酸バリウム誘電体薄膜をアニール処理
して用いたことを特徴とするコンデンサである。The capacitor is characterized in that the barium titanate dielectric thin film is annealed and used.
作用 チタン酸バリウム薄膜は、非常に時間幅の短い高電圧
パルスにより形成されかつ高温、高密度化したプラズマ
を用いるため、薄膜形成速度が極めて大きく、BaTiO3誘
電体薄膜の高品質のコンデンサを得ることができる。The barium titanate thin film is formed by a high-voltage pulse with a very short time width and uses high-temperature, high-density plasma, so the thin film formation speed is extremely high, and a high-quality capacitor of BaTiO 3 dielectric thin film is obtained. be able to.
実施例 以下、本発明の実施例について詳述する。Examples Hereinafter, examples of the present invention will be described in detail.
第１図は、大強度パルスイオンビーム蒸発法（以下IB
E法という）を用いたBaTiO3薄膜形成装置の説明図を示
す。本装置は、大強度パルスイオンビーム発生部１およ
び薄膜形成部２から構成されており、これらは真空容器
３（真空度〜10-4Torr）中に設置されている。FIG. 1 shows a high intensity pulsed ion beam evaporation method (hereinafter referred to as IB
FIG. 1 is an explanatory diagram of a BaTiO 3 thin film forming apparatus using E method). This apparatus comprises a high-intensity pulsed ion beam generating section 1 and a thin film forming section 2, which are installed in a vacuum vessel 3 (vacuum degree: 10 -4 Torr).
イオンビーム発生部には収束型の磁器絶縁型イオンダ
イオード（MID）を用いた。MIDの陽極上にはイオン源と
してポリエチレンが取り付けられており、大強度パルス
イオンビーム発生装置“ETIGO−1"（1.2MV,240kA,0.3T
W,50ns,14.4kJ）から発生される高電圧短パルスが陽極
４に加わることによって、陽極プラズマが形成される。
陽極プラズマ中のイオン（主にプロトン）は、陽極４−
陰極５ギヤップ（10mm）の高電界によって加速される。
このとき、ギヤップに対して垂直方向の磁場Ｂを加える
ことによって、陰極５から陽極４に向かう電子電流Ｉを
抑制する。陰極はVane（羽）型（黄銅製）で、イオンビ
ームはVaneの間を通り抜けて外部に引き出される。A convergent porcelain insulated ion diode (MID) was used for the ion beam generator. Polyethylene is attached as an ion source on the anode of the MID, and a high-intensity pulsed ion beam generator "ETIGO-1" (1.2MV, 240kA, 0.3T
A high-voltage short pulse generated from W, 50 ns, 14.4 kJ) is applied to the anode 4 to form anode plasma.
The ions (mainly protons) in the anode plasma are
The cathode is accelerated by a high electric field of 5 gaps (10 mm).
At this time, by applying a magnetic field B in the vertical direction to the gap, the electron current I traveling from the cathode 5 to the anode 4 is suppressed. The cathode is a Vane (wing) type (made of brass), and the ion beam passes through between the Vane and is extracted to the outside.
薄膜形成部２は、箱型の容器内にターゲット６（BaTi
O3）および薄膜形成用基板（Al箔，ガラス）が設置され
ている。ビーム入射口（20mmφ，陽極からの距離ｚ＝13
0mm）を通り抜けたビームは、ビームに対して45゜傾い
て設置されたBaTiO3ターゲットの表面を照射する。この
ようにして蒸発したターゲット粒子は、ターゲット上方
に設置された薄膜形成用基板に堆積し薄膜化される。実
験中基板温度は室温に保たれた。The thin film forming unit 2 includes a target 6 (BaTi
O 3 ) and a substrate for thin film formation (Al foil, glass) are installed. Beam entrance (20mmφ, distance from anode z = 13
The beam passing through 0 mm) illuminates the surface of a BaTiO 3 target placed at an angle of 45 ° with respect to the beam. The target particles evaporated in this manner are deposited on the thin film forming substrate placed above the target and are thinned. The substrate temperature was kept at room temperature during the experiment.
なお、上記実施例では、Al箔、ガラスからなる基板上
にターゲット粒子を堆積し薄膜化したが、Al箔表面にAl
2O3皮膜が形成されていても、上記と同様、薄膜を形成
することができる。In the above embodiment, the target particles were deposited and thinned on a substrate made of Al foil or glass.
Even when the 2 O 3 film is formed, a thin film can be formed in the same manner as described above.
第１図中７はイオンビーム、８はアルミ箔などの基板
である。In FIG. 1, reference numeral 7 denotes an ion beam, and 8 denotes a substrate such as an aluminum foil.
実験で使用したターゲットおよび基板は以下の通りで
ある。The targets and substrates used in the experiment are as follows.
（Ａ）ターゲット チタン酸バリウム系セラミック ・組成 BaTiO3 92.8mol％ Nd2O3 2.6mol％ TiO2 4.5mol％ BiO2O3 0.1mol％ MnCo3 0.2wt％添加 ・寸法 15.1φ×0.73t mm ・電気的特性 ε＝11000, tan δ＝0.2％ （Ｂ）基板 エッチングアルミ箔 ・組成 Al 99.3％ ・厚み 50μｍ 第２図はエッチングAl箔上に形成された薄膜のＸ線回
折パターンを示す。この場合、マルクス充電電圧30kV、
ショット数５、ダイオード電圧〜1MV、ダイオード電流
〜8kA、イオン電流密度〜10.5kA/cm2、ターゲット−基
板間距離30mm、真空度〜10-4Torr、基板（アルミニウ
ム）寸法38×26×1mmであった。図より、Bragg角２θ〜
22゜（100）、31.7゜（110）、39゜（111）、45.4゜（2
00）、51゜（210）、および56.3゜（211）にピークが現
れることが分かる。これらは、JCPDS（Joint Committe
e on Powder Diffraction Standards）のデータか
ら予測される正方晶のBaTiO3の回折パターンに一致する
ことから、正方晶の薄膜が生成されたと考えられる。(A) Target Barium titanate ceramic ・ Composition BaTiO 3 92.8 mol% Nd 2 O 3 2.6 mol% TiO 2 4.5 mol% BiO 2 O 3 0.1 mol% MnCo 3 0.2 wt% addition ・ Dimension 15.1φ × 0.73t mm ・Electrical characteristics ε = 11000, tan δ = 0.2% (B) Substrate Etched aluminum foil ・ Composition Al 99.3% ・ Thickness 50 μm FIG. 2 shows an X-ray diffraction pattern of a thin film formed on the etched Al foil. In this case, Marx charging voltage 30kV,
Shot Number 5, diode voltage ～1MV, diode current ～8KA, ion current density ~10.5kA / cm 2, the target - substrate distance 30 mm, the degree of vacuum to 10 -4 Torr, the substrate (aluminum) Dimensions 38 × 26 × 1 mm there were. From the figure, Bragg angle 2θ ~
22 ゜ (100), 31.7 ゜ (110), 39 ゜ (111), 45.4 ゜ (2
It can be seen that peaks appear at (00), 51 ° (210), and 56.3 ° (211). These are JCPDS (Joint Committe
It is considered that a tetragonal thin film was generated from the fact that it matches the diffraction pattern of tetragonal BaTiO 3 predicted from the data of e on Powder Diffraction Standards).
次に上述のIBE法によりエッチングアルミ箔上にBaTiO
3薄膜層を形成した資料をアジピン酸アンモニウム水溶
液中にて周波数120Hzにおいて静電容量を測定し、328.4
μF/cm2を得た。この値はBaTiO3薄膜層を形成しないエ
ッチングアルミ箔の静電容量150μF/cm2に対し約2.1倍
の静電容量値を示す。Next, BaTiO is etched on the etched aluminum foil by the above-mentioned IBE method.
(3) The capacitance of the material on which the thin film layer was formed was measured at a frequency of 120 Hz in an aqueous solution of ammonium adipate, and 328.4
μF / cm 2 was obtained. This value is approximately 2.1 times as large as the capacitance of 150 μF / cm 2 of the etched aluminum foil on which the BaTiO 3 thin film layer is not formed.
また上記BaTiO3薄膜層を形成したエッチングアルミニ
ウム箔を電解コンデンサ陰極用電極箔として用いた結
果、低圧用電解コンデンサとして静電容量が増加し、か
つ高温負荷試験においても静電容量の変化率が少なく極
めて安定していることが実証された。In addition, as a result of using the etched aluminum foil on which the BaTiO 3 thin film layer was formed as the electrode foil for the cathode of an electrolytic capacitor, the capacitance increased as a low-voltage electrolytic capacitor, and the rate of change of the capacitance was small even in a high-temperature load test. It proved to be extremely stable.
第３図は定格16V、100μＦの本発明の実施例と、BaTi
O3薄膜層を形成しない従来品とを温度105℃中にて1000
時間負荷試験例を示す。FIG. 3 shows an embodiment of the present invention having a rating of 16 V and 100 μF, and BaTi
1000 ° C at 105 ° C with conventional product without forming O 3 thin film layer
An example of a time load test is shown.
なお、上述の実施例においては、ビームの照射は10回
照射すると、BaTiO3薄膜は〜2000Åであり、ビーム１照
射あたりの薄膜はほぼ200Å程度であることが確認され
ており、薄膜をより薄くかつ300〜600℃でアニール処理
することにより均質にすることができ、より高容量の電
極箔が得られる。In the above-described embodiment, when the beam irradiation is performed 10 times, it is confirmed that the BaTiO 3 thin film has a thickness of about 2000 ° and the thin film per beam irradiation is about 200 °, and the thin film is thinner. Further, by performing the annealing treatment at 300 to 600 ° C., the electrode foil can be made uniform, and a higher-capacity electrode foil can be obtained.
発明の効果 本発明によればIBE法によってBaTiO3薄膜を形成する
ため薄膜形成速度が大きく生産性の面で有利となると共
に、コンデンサの品質を著しく向上させるなど顕著な効
果を有し、工業的ならびに実用的価値の大なるものであ
る。Effect of the Invention According to the present invention, a BaTiO 3 thin film is formed by the IBE method, which has a large thin film forming speed, is advantageous in terms of productivity, and has a remarkable effect such as remarkably improving the quality of a capacitor. And of great practical value.
第１図は本発明に係る薄膜形成装置の説明図、第２図は
本発明に係るエッチングアルミ箔上に形成された薄膜の
Ｘ線回折パターン図、第３図は本発明品と従来品とを比
較したアルミ電解コンデンサの高温負荷試験特性図であ
る。 6:ターゲット、7:イオンビーム 8:基板（Al箔）1 is an explanatory view of a thin film forming apparatus according to the present invention, FIG. 2 is an X-ray diffraction pattern diagram of a thin film formed on an etched aluminum foil according to the present invention, and FIG. FIG. 4 is a high-temperature load test characteristic diagram of an aluminum electrolytic capacitor comparing FIG. 6: Target, 7: Ion beam 8: Substrate (Al foil)
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−304613（ＪＰ，Ａ) 特開 昭60−60709（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01G 9/04 H01G 9/07 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-63-304613 (JP, A) JP-A-60-60709 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01G 9/04 H01G 9/07
Claims (2)
ーム発生部と、チタン酸バリウムターゲットを有する薄
膜形成部とからなる大強度パルスイオンビーム発生装置
を用い、真空中で、高電圧短パルスを陽極に加えて形成
される陽極プラズマ中のイオンを陽極−陰極ギャップの
高電界によって加速し、陰極Vane（羽）の間も通過する
大強度パルスイオンビームをチタン酸バリウムターゲッ
トに照射させて高温、高密度プラズマを生成させ、該プ
ラズマを金属または誘電体上に堆積させ、チタン酸バリ
ウム誘電体薄膜を形成することを特徴とするコンデンサ
の製造方法。1. A high-intensity pulsed ion beam generator comprising a high-intensity pulsed ion beam generator having both negative and positive poles and a thin-film forming section having a barium titanate target is used to generate a high-voltage pulsed beam in a vacuum. The ions in the anode plasma formed by applying a pulse to the anode are accelerated by the high electric field of the anode-cathode gap, and the barium titanate target is irradiated with a high-intensity pulsed ion beam that passes between the cathode vanes. A method for producing a capacitor, comprising: generating a high-temperature, high-density plasma; depositing the plasma on a metal or a dielectric to form a barium titanate dielectric thin film.
ル処理して用いたことを特徴とするコンデンサ。2. A capacitor characterized in that said barium titanate dielectric thin film is annealed and used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24045190A JP2960132B2 (en) | 1990-09-10 | 1990-09-10 | Capacitor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24045190A JP2960132B2 (en) | 1990-09-10 | 1990-09-10 | Capacitor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04119620A JPH04119620A (en) | 1992-04-21 |
| JP2960132B2 true JP2960132B2 (en) | 1999-10-06 |
Family
ID=17059696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24045190A Expired - Fee Related JP2960132B2 (en) | 1990-09-10 | 1990-09-10 | Capacitor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2960132B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4729191B2 (en) * | 2001-04-06 | 2011-07-20 | 八井 浄 | Method for producing polycrystalline silicon thin film |
-
1990
- 1990-09-10 JP JP24045190A patent/JP2960132B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04119620A (en) | 1992-04-21 |
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