Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JP2978656B2 - Semiconductor integrated circuit test apparatus and test method thereof - Google Patents
[go: Go Back, main page]

JP2978656B2 - Semiconductor integrated circuit test apparatus and test method thereof - Google Patents

Semiconductor integrated circuit test apparatus and test method thereof

Info

Publication number
JP2978656B2
JP2978656B2 JP4297530A JP29753092A JP2978656B2 JP 2978656 B2 JP2978656 B2 JP 2978656B2 JP 4297530 A JP4297530 A JP 4297530A JP 29753092 A JP29753092 A JP 29753092A JP 2978656 B2 JP2978656 B2 JP 2978656B2
Authority
JP
Japan
Prior art keywords
capacitance
potential
integrated circuit
semiconductor integrated
comparator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4297530A
Other languages
Japanese (ja)
Other versions
JPH06148272A (en
Inventor
俊彦 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP4297530A priority Critical patent/JP2978656B2/en
Publication of JPH06148272A publication Critical patent/JPH06148272A/en
Application granted granted Critical
Publication of JP2978656B2 publication Critical patent/JP2978656B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は半導体集積回路試験装置
に関し、特に測定端子の負荷容量接続回路と負荷容量の
測定方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit test apparatus, and more particularly to a load capacitance connection circuit for measuring terminals and a load capacitance connection circuit .
Related to the measurement method .

【0002】[0002]

【従来の技術】従来の半導体集積回路試験装置本体(以
下テスタと称す)2は、図5に示すように、半導体集積
回路30(以下デバイスと称す)の端子29を、電気的
に取り出す測定ソケット3上の接触子26と接続させ、
更に測定基板1上の端子31よりテスタ2の測定ピン2
7に接続されている。デバイス30の端子29の状態が
入力状態であれば、テスタ2側でリレー24がオンし、
ドライバ4を接続し、信号が入力され、また出力状態で
あればリレー25がオンし、コンパレータ5を接続して
出力信号を測定し、デバイスの動作状態に応じた電気的
特性試験が行われる。
2. Description of the Related Art As shown in FIG. 5, a conventional semiconductor integrated circuit test apparatus main body (hereinafter referred to as a tester) 2 is a measuring socket for electrically extracting a terminal 29 of a semiconductor integrated circuit 30 (hereinafter referred to as a device). 3 and the contact 26 on
Furthermore, the measuring pin 2 of the tester 2 is
7 is connected. If the state of the terminal 29 of the device 30 is the input state, the relay 24 is turned on on the tester 2 side,
The driver 4 is connected, a signal is input, and if it is in the output state, the relay 25 is turned on, the comparator 5 is connected, the output signal is measured, and an electrical characteristic test according to the operation state of the device is performed.

【0003】[0003]

【発明が解決しようとする課題】テスタによる評価・測
定においてデバイスの特性を保証する場合、スペック上
の容量負荷を付加して測定する必要がある。前述した従
来のテスタではライン上の寄生容量7,32,33に対
し、不足分の容量8を測定基板1上に部品付加してい
た。しかしながら、寄生容量値は正確には算出しづら
く、また配線長等にも大きなばらつきがあり、補正容量
値もまかな値でしか付けられない為、各端子で負荷が大
きくばらつき、いかに高速・高精度のテスタを開発して
も正確な測定ができていないというのが現状であった。
しかも、品種・測定基板・測定端子毎に容量を付加する
ので、測定基板のコストは高くなるし、品種・基板枚数
延べの部品点数も増大していく。
When assuring the characteristics of the device in the evaluation and measurement by the tester, it is necessary to add a capacitance load in the specification and perform the measurement. In the above-described conventional tester, the insufficient capacitance 8 is added to the measurement substrate 1 in addition to the parasitic capacitances 7, 32, and 33 on the line. However, it is difficult to accurately calculate the parasitic capacitance value, and there is also a large variation in the wiring length and the like. Since the correction capacitance value can only be given as a rough value, the load varies greatly at each terminal. At present, accurate measurement has not been possible even with the development of an accurate tester.
In addition, since a capacitance is added for each product type, measurement board, and measurement terminal, the cost of the measurement board increases, and the number of components including the product type and the number of boards increases.

【0004】本発明の目的は、前記問題点が解決され、
高精度に測定できるようにした半導体集積回路試験装置
を提供することにある。
An object of the present invention is to solve the above problems,
An object of the present invention is to provide a semiconductor integrated circuit test device capable of measuring with high accuracy.

【0005】[0005]

【課題を解決するための手段】本発明の半導体集積回路
試験装置は、半導体集積回路がセットされる測定基板の
外部接続端子が、半導体集積回路試験装置本体の測定ピ
ンと接続され、前記半導体集積回路を前記本体側で試験
する半導体集積回路試験装置において、可変容量と、測
定系に付随する負荷容量を充電する手段と、この充電さ
れた電荷を前記負荷容量と前記可変容量に電荷配分する
手段と、この電荷配分された結果により前記負荷容量を
求める手段と、を有する事を特徴とするまた、測定系
に付加される寄生容量と、前記測定系に属するコンパレ
ータにつく容量とを負荷容量として、前記測定系の配線
上の電位を第一の電位まで引き上げ、前記負荷容量を充
電させる、次に前もって任意の容量値に設定し、また接
地電位に放電しておいた補正容量を前記配線に接続し
て、前記負荷容量に充電した電荷の配分を行い、電荷分
配され前記コンパレータ部分の容量の電位を第二の電位
へと変化させる、この第二の電位の電位を前記コンパレ
ータにより測定し、前記第一の電位から前記第二の電位
への変化量により前記負荷容量を求める。さらに、測定
系に付加される寄生容量と、前記測定系に属するコンパ
レータにつく容量とを負荷容量として、前記測定系の配
線上の電位を第一の電位まで引き上げ、前記負荷容量を
充電させ、この時のレートを前記コンパレータで測定す
る、次にこの電位を所定値まで放電し、次に前もって任
意の容量値に設定し、また接地電位に放電しておいた補
正容量を前記配線に接続して、再度充電する、この時の
電位上昇のレートを前記コンパレータで測定し、前記レ
ートとこのレートの差から前記負荷容量を求める。
According to a semiconductor integrated circuit test apparatus of the present invention, an external connection terminal of a measurement substrate on which a semiconductor integrated circuit is set is connected to a measurement pin of a semiconductor integrated circuit test apparatus main body. in the semiconductor integrated circuit testing apparatus for testing at the body side, and a variable capacitance, measuring
Means for charging the load capacity associated with the
Distributed charge to the load capacitance and the variable capacitance
Means, and the load capacitance is determined by the result of the charge distribution.
And means for seeking . Also, the measurement system
The parasitic capacitance added to the
The measurement system wiring
The upper potential is raised to the first potential and the load capacity is charged.
Power, then set the desired capacitance value in advance,
Connect the correction capacitor discharged to ground potential to the wiring
Distribution of the electric charge charged to the load capacitance,
The potential of the capacitor of the comparator portion
The potential of this second potential is changed to
Data from the first potential to the second potential
The load capacity is obtained from the amount of change to. In addition, measurement
The parasitic capacitance added to the system and the
The load on the measuring system is taken as the load capacity of the
The potential on the line is raised to the first potential, and the load capacitance is increased.
Charge the battery and measure the rate at this time with the comparator.
Next, discharge this potential to a predetermined value, and then
Set to the desired capacitance value, and the supplement that has been discharged to ground potential
Connect a positive capacity to the wiring and charge again.
The rate of potential rise is measured by the comparator, and the
The load capacity is determined from the difference between the rate and the rate.

【0006】[0006]

【実施例】本発明について図面を参照して説明する。図
1は本発明の第1の実施例の半導体集積回路試験装置を
示す回路図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to the drawings. FIG. 1 is a circuit diagram showing a semiconductor integrated circuit test apparatus according to a first embodiment of the present invention.

【0007】図1に示すように、本実施例では、デバイ
ス30の端子29より、測定ソケット3上の接触子26
によって信号を取り出し、更に測定基板1上の端子31
よりテスタ2の測定ピン27に接続され、リレー34〜
37を介して、それぞれドライバ4,コンパレータ5,
可変付加容量38,DC電源39に接続されている。
As shown in FIG. 1, in this embodiment, a contact 26 on a measuring socket 3 is connected to a terminal 29 of a device 30.
The signal is taken out by the
Is connected to the measuring pin 27 of the tester 2 and relays 34 to
37, a driver 4, a comparator 5,
The variable additional capacitance 38 and the DC power supply 39 are connected.

【0008】本実施例では、半導体集積回路の試験装置
において、各測定端子に任意の容量を付加し測定を行
う。
In this embodiment, in a test apparatus for a semiconductor integrated circuit, an arbitrary capacitance is added to each measurement terminal to perform measurement.

【0009】次に本実施例による補正容量38の設定に
ついて、図2のタイミングを参照しながら説明する。図
2において、まずDC電源39を一定レベルV1に設定
しておき、次にリレー35をオンさせ、コンパレータ5
を接続する。この時、測定ライン上に付いている負荷容
量は測定基板3上及びテスタ側配線につく寄生容量7
と、リレー35がオンしてついたところのコンパレータ
につく容量33とである。そこで、リレー37をオンさ
せ、配線上の電位をV1まで引き上げ、負荷容量をチャ
ージアップさせる。次に、リレー37をオフさせ、更に
リレー36をオンさせると、前もって任意の容量値に設
定し、またGND電位にディスチャージしておいた補正
容量38の値C38と、もともとの寄生容量7,33と
の間で電荷分配されコンパレータ5部分の容量33の電
位はV2へと変化する。このV2のレベルをコンパレー
タにより測定しておくことにより、次の関係式が成り立
つ。トータルの寄生容量をCXとすると、CX・V1=
(CX+C38)・V2。
Next, the setting of the correction capacitance 38 according to this embodiment will be described with reference to the timing chart of FIG. In FIG. 2, first, the DC power supply 39 is set to a constant level V1, then the relay 35 is turned on, and the comparator 5 is turned on.
Connect. At this time, the load capacitance on the measurement line is the parasitic capacitance 7 on the measurement substrate 3 and the wiring on the tester side.
And a capacitor 33 attached to the comparator where the relay 35 is turned on. Therefore, the relay 37 is turned on, the potential on the wiring is raised to V1, and the load capacitance is charged up. Next, when the relay 37 is turned off and the relay 36 is turned on, the value of the correction capacitor 38 set to an arbitrary capacitance value in advance and discharged to the GND potential and the original parasitic capacitance 7, 33 And the potential of the capacitor 33 in the comparator 5 changes to V2. By measuring the level of V2 by the comparator, the following relational expression is established. If the total parasitic capacitance is CX, CX · V1 =
(CX + C38) · V2.

【0010】この関係式よりCXが求められ、本来のス
ペックとして保証すべき負荷容量を補正設定すること
が、個々の端子に対し可能となる。
CX is obtained from this relational expression, and it becomes possible to correct and set the load capacity to be guaranteed as the original specification for each terminal.

【0011】図3は本発明の第2の実施例の半導体集積
回路試験装置を示す回路図である。本発明の第2の実施
例は、図3に示すように、デバイス30の端子29よ
り、測定ソケット3上の接触子26によって信号を取り
出し、更に測定基板1上の端子31より、テスタ2の測
定ピン27に接続され、リレー10〜13を介して、そ
れぞれ抵抗9,ドライバ4,コンパレータ5,可変付加
容量6に接続されている。また、抵抗9の反対側にはド
ライバ41が接続されている。
FIG. 3 is a circuit diagram showing a semiconductor integrated circuit test apparatus according to a second embodiment of the present invention. In the second embodiment of the present invention, as shown in FIG. 3, a signal is taken out from a terminal 29 of a device 30 by a contact 26 on a measuring socket 3, and a signal of a tester 2 is taken out from a terminal 31 on a measuring board 1. It is connected to a measurement pin 27 and is connected to a resistor 9, a driver 4, a comparator 5, and a variable additional capacitor 6 via relays 10 to 13, respectively. A driver 41 is connected to the opposite side of the resistor 9.

【0012】次に本実施例による補正容量6の設定につ
いて、図4のタイミングを参照しながら説明する。図4
において、まずリレー10,12をオンさせ、抵抗9及
びコンパレータ5を接続する。この時、測定ライン上に
付いている負荷容量は、測定基板3上及びテスタ側配線
につく寄生容量7と、リレー12がオンしてついたとこ
ろのコンパレータ5につく容量33である。そこで、ド
ライバ41の電位40を、0レベルからV3レベルまで
立ち上げると、測定ライン上のレベルは抵抗9を介して
容量をチャージアップさせることにより、過渡的に追従
変化する。この測定ラインの電位変化をコンパレータ5
で観測しておき、ある一定レベルV4までの時間t1を
求めておく。
Next, the setting of the correction capacitor 6 according to this embodiment will be described with reference to the timing chart of FIG. FIG.
First, the relays 10 and 12 are turned on, and the resistor 9 and the comparator 5 are connected. At this time, the load capacitance on the measurement line is the parasitic capacitance 7 on the measurement substrate 3 and the wiring on the tester side, and the capacitance 33 on the comparator 5 where the relay 12 is turned on. Therefore, when the potential 40 of the driver 41 rises from the 0 level to the V3 level, the level on the measurement line changes transiently by charging up the capacitance via the resistor 9. The change in the potential of this measurement line is determined by the comparator 5
And a time t1 until a certain level V4 is obtained.

【0013】次に、リレー13をオンさせ、ある値に設
定しておいた補正容量6を測定ライン上に付加し、先ほ
どと同様にドライバ41の電位40を0レベルからV3
レベルまで立ち上げると、測定ライン上のレベルは抵抗
9を介して容量をチャージアップさせることにより過渡
的に追従変化する。この測定ラインの電位変化をコンパ
レータ5で観測しておき、ある一定レベルV4までの時
間t2を求める。
Next, the relay 13 is turned on, the correction capacitance 6 set to a certain value is added to the measurement line, and the potential 40 of the driver 41 is changed from the 0 level to V3 as described above.
When the level rises to the level, the level on the measurement line changes transiently by charging up the capacitance via the resistor 9. The potential change of this measurement line is observed by the comparator 5, and a time t2 until a certain level V4 is obtained.

【0014】ここで、抵抗9の値を大きめに設定してお
けば、次の関係が成り立つ。
Here, if the value of the resistor 9 is set relatively large, the following relationship is established.

【0015】 [0015]

【0016】この関係式よりトータルの寄生容量CX=
C6・t2/(t1−t2)が求められ、本来のスペッ
クとして保証すべき負荷容量を補正設定することが、個
々の端子に対し可能となる。
From this relational expression, the total parasitic capacitance CX =
C6 · t2 / (t1−t2) is obtained, and it is possible to correct and set the load capacity to be guaranteed as the original specification for each terminal.

【0017】[0017]

【発明の効果】以上説明したように、本発明は、半導体
集積回路の個々の端子に正確な容量を付加することを可
能とし、精度の高い正確な測定を実現することができ、
また測定基板上に個々の製品・個々の端子に対して容量
部品を付ける必要も無くなるので基板作製のコストが低
減できるという効果がある。
As described above, according to the present invention, it is possible to add an accurate capacitance to each terminal of a semiconductor integrated circuit, and to realize a highly accurate and accurate measurement.
In addition, since there is no need to attach a capacitive component to each product and each terminal on the measurement substrate, there is an effect that the cost of manufacturing the substrate can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例の半導体集積回路試験装
置を示す回路図である。
FIG. 1 is a circuit diagram showing a semiconductor integrated circuit test apparatus according to a first embodiment of the present invention.

【図2】図1の第1の実施例の動作を示すタイミング図
である。
FIG. 2 is a timing chart showing the operation of the first embodiment of FIG.

【図3】本発明の第2の実施例の半導体集積回路試験装
置を示す回路図である。
FIG. 3 is a circuit diagram showing a semiconductor integrated circuit test device according to a second embodiment of the present invention.

【図4】図3の第2の実施例の動作を示すタイミング図
である。
FIG. 4 is a timing chart showing an operation of the second embodiment of FIG. 3;

【図5】従来の半導体集積回路試験装置の回路図であ
る。
FIG. 5 is a circuit diagram of a conventional semiconductor integrated circuit test device.

【符号の説明】[Explanation of symbols]

1 測定基板 2 半導体集積回路試験装置本体 3 測定ソケット 4,41 ドライバ 5 コンパレータ 6,38 可変容量 7 寄生容量 8 外付け補正容量 9 抵抗 10〜13,24,25,34,〜,37 リレー 26 接触子 27 半導体集積回路測定ピン 29 半導体集積回路端子 30 半導体集積回路 31 測定基板端子 32 ドライバ寄生容量 33 コンパレータ寄生容量 39 DC電源 40 接点 V1〜V4 電位 t1,t2 時間 REFERENCE SIGNS LIST 1 measurement board 2 semiconductor integrated circuit test apparatus main body 3 measurement socket 4, 41 driver 5 comparator 6, 38 variable capacitance 7 parasitic capacitance 8 external correction capacitance 9 resistance 10 to 13, 24, 25, 34, to 37 relay 26 contact Terminal 27 Semiconductor integrated circuit measurement pin 29 Semiconductor integrated circuit terminal 30 Semiconductor integrated circuit 31 Measurement board terminal 32 Driver parasitic capacitance 33 Comparator parasitic capacitance 39 DC power supply 40 Contact V1 to V4 Potential t1, t2 Time

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 半導体集積回路がセットされる測定基板
の外部接続端子が、半導体集積回路試験装置本体の測定
ピンと接続され、前記半導体集積回路を前記本体側で試
験する半導体集積回路試験装置において、可変容量と、
測定系に付随する負荷容量を充電する手段と、この充電
された電荷を前記負荷容量と前記可変容量に電荷配分す
る手段と、この電荷配分された結果により前記負荷容量
を求める手段と、を有する事を特徴とする半導体集積回
路試験装置
An external connection terminal of a measurement substrate on which a semiconductor integrated circuit is set is connected to a measurement pin of a semiconductor integrated circuit test device main body, and the semiconductor integrated circuit is tested on the main body side. Variable capacity,
Means for charging the load capacity associated with the measurement system, and
Charge distributed to the load capacitance and the variable capacitance.
Means and the load capacity
Means for obtaining a semiconductor integrated circuit.
Road test equipment .
【請求項2】 測定系に付加される寄生容量と、前記測
定系に属するコンパレータにつく容量とを負荷容量とし
て、前記測定系の配線上の電位を第一の電位まで引き上
げ、前記負荷容量を充電させる、次に前もって任意の容
量値に設定し、また接地電位に放電しておいた補正容量
を前記配線に接続して、前記負荷容量に充電した電荷の
配分を行い、電荷分配され前記コンパレータ部分の容量
の電位を第二の電位へと変化させる、この第二の電位の
電位を前記コンパレータにより測定し、前記第一の電位
から前記第二の電位への変化量により前記負荷容量を求
める試験方法。
2. A potential on a wiring of the measurement system is raised to a first potential using a parasitic capacitance added to the measurement system and a capacitance attached to a comparator belonging to the measurement system as a load capacitance. Charge, then set the capacitance value to an arbitrary value in advance, and connect the correction capacitance that has been discharged to the ground potential to the wiring, distribute the charge charged to the load capacitance, and distribute the charge to the comparator. The potential of the capacitance of the portion is changed to a second potential. The potential of the second potential is measured by the comparator, and the load capacitance is obtained from the amount of change from the first potential to the second potential. Test method.
【請求項3】 測定系に付加される寄生容量と、前記測
定系に属するコンパレータにつく容量とを負荷容量とし
て、前記測定系の配線上の電位を第一の電位まで引き上
げ、前記負荷容量を充電させ、この時のレートを前記コ
ンパレータで測定する、次にこの電位を所定値まで放電
し、次に前もって任意の容量値に設定し、また接地電位
に放電しておいた補正容量を前記配線に接続して、再度
充電する、この時の電位上昇のレートを前記コンパレー
タで測定し、前記レートとこのレートの差から前記負荷
容量を求める試験方法。
3. A potential on a wiring of the measurement system is raised to a first potential by using a parasitic capacitance added to the measurement system and a capacitance attached to a comparator belonging to the measurement system as a load capacitance, and the load capacitance is reduced. Charge, the rate at this time is measured by the comparator, then this potential is discharged to a predetermined value, and then a predetermined capacitance value is set in advance, and the correction capacitance that has been discharged to the ground potential is connected to the wiring. And charging the battery again. The comparator measures the rate of potential rise at this time, and determines the load capacity from the difference between the rate and the rate.
JP4297530A 1992-11-09 1992-11-09 Semiconductor integrated circuit test apparatus and test method thereof Expired - Fee Related JP2978656B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4297530A JP2978656B2 (en) 1992-11-09 1992-11-09 Semiconductor integrated circuit test apparatus and test method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4297530A JP2978656B2 (en) 1992-11-09 1992-11-09 Semiconductor integrated circuit test apparatus and test method thereof

Publications (2)

Publication Number Publication Date
JPH06148272A JPH06148272A (en) 1994-05-27
JP2978656B2 true JP2978656B2 (en) 1999-11-15

Family

ID=17847729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4297530A Expired - Fee Related JP2978656B2 (en) 1992-11-09 1992-11-09 Semiconductor integrated circuit test apparatus and test method thereof

Country Status (1)

Country Link
JP (1) JP2978656B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994014363A1 (en) * 1992-12-21 1994-07-07 Kiribai Chemical Co., Ltd. Heater
US6327545B1 (en) * 1998-10-09 2001-12-04 Agilent Technologies, Inc. Method and apparatus for board model correction

Also Published As

Publication number Publication date
JPH06148272A (en) 1994-05-27

Similar Documents

Publication Publication Date Title
CN101140317B (en) Battery pack total voltage detection and leakage detection device
WO2011010349A1 (en) Testing device
CN111856146A (en) Capacitance value measuring device and method
JP2978656B2 (en) Semiconductor integrated circuit test apparatus and test method thereof
JP2006084380A (en) Non-contact voltage measuring device
TWI383158B (en) Capacitance measurement circuit and method
JPH056544Y2 (en)
JP2009092640A (en) System, circuit and method for accurately measuring parasitic capacitance inside automatic inspection equipment
KR102553091B1 (en) Cmos temperature sensor and operating method there of
CN212780999U (en) Capacitance value measuring device
US5990698A (en) Test method and apparatus for semiconductor element
WO2005031375A1 (en) Method and measuring device for determining the capacitanceof a capacitive electrical component connected to an integrated circuit
Li et al. Low-cost CMOS interface for capacitive sensors and its application in a capacitive angular encoder
CN110132320B (en) Method for monitoring capacitance change of capacitive sensor
JP4573428B2 (en) Modeling method for electronic devices
JP2982236B2 (en) Test circuit for semiconductor integrated circuits
WO2023026839A1 (en) Impedance measuring device
CN212083624U (en) Voltage detection circuit, circuit board, device and vehicle-mounted air conditioner
JP3494942B2 (en) Integrated semiconductor circuit
JPH10293154A (en) Bias power source circuit for semiconductor testing device
JP2866965B2 (en) Method of generating best measurement condition data in circuit board inspection device
US6504384B1 (en) Apparatus of measuring capacitance and method thereof
US11906559B2 (en) Enhanced impedance measurement using CTMU
CN100552461C (en) A method for measuring capacitance mismatch and its circuit structure
CN116358729B (en) Semiconductor power module detection circuit

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 19990817

LAPS Cancellation because of no payment of annual fees