JP2978802B2 - Sputtering equipment - Google Patents
Sputtering equipmentInfo
- Publication number
- JP2978802B2 JP2978802B2 JP8338486A JP33848696A JP2978802B2 JP 2978802 B2 JP2978802 B2 JP 2978802B2 JP 8338486 A JP8338486 A JP 8338486A JP 33848696 A JP33848696 A JP 33848696A JP 2978802 B2 JP2978802 B2 JP 2978802B2
- Authority
- JP
- Japan
- Prior art keywords
- shutter
- holder
- wafer
- pseudo wafer
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 60
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
- 239000002184 metal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体基板である
ウェハに金属膜と同一金属の窒化膜を交互にスパッタリ
ングするスパッタ装置に関する。The present invention relates to a sputtering apparatus for alternately sputtering a metal film and a nitride film of the same metal on a wafer as a semiconductor substrate.
【0002】[0002]
【従来の技術】従来、例えば、同一金属膜であるTi膜
及びTiN膜を成膜するプロセスにおいては、一つのス
パッタチャンバ内でTi膜の成膜とTiN膜の成膜を交
互に行なうことがある。このことは、異なる二台のスパ
ッタ装置で行なえば、処理時間が短縮されるが、Ti膜
およびTiN膜と異なる金属膜を形成していたスパッタ
装置では成膜すると、スパッタチャンバに堆積する異質
の金属膜が剥れその金属のパーテイクルがTi膜あるい
はTiN膜を汚染するという品質上の問題が起きること
が多々あった。2. Description of the Related Art Conventionally, for example, in a process of forming a Ti film and a TiN film which are the same metal film, it is necessary to alternately form a Ti film and a TiN film in one sputtering chamber. is there. This can be accomplished by using two different sputtering apparatuses, which shortens the processing time. However, when a sputtering apparatus that has formed a metal film different from the Ti film and the TiN film is formed, a different type of foreign material deposited in the sputtering chamber is formed. In many cases, there is a quality problem that the metal film is peeled off and the particles of the metal contaminate the Ti film or TiN film.
【0003】そこで、同一の金属の窒化膜を形成する場
合は、同一のスパッタ装置を使用して、例えば、Ti膜
からTiN膜へあるいはTiN膜からTi膜へ条件を切
換えることにより行なっていた。しかしながら、切換え
直後のスパッタリングは、装置のドリフトなどにより不
安定であるため、スパッタリングを安定させる意味で、
空飛ばしと呼ばれる製品となるウェハ以外の物に仮にス
パッタリングすることが必要であった。Therefore, when a nitride film of the same metal is formed, the same sputtering apparatus is used, for example, by switching conditions from a Ti film to a TiN film or from a TiN film to a Ti film. However, since the sputtering immediately after switching is unstable due to drift of the apparatus, etc., in the sense of stabilizing the sputtering,
It was necessary to tentatively perform sputtering on an object other than a wafer, which is a product called a skipping.
【0004】図2(a)および(b)は従来の一例のス
パッタ装置の模式横断面図および模式縦断面図である。
従来、この種のスパッタ装置は、図2に示すように、チ
ャンバ15内に設けられるとともにシャフト16の回転
によりチャンバ21内に水平に旋回するシャッタ14を
備えていた。また、このシャッタ14は、スパッタ物が
ホルダ17に付着しないように、ホルダ17の全面を覆
うのに十分な大きさをもっている。FIGS. 2A and 2B are a schematic cross-sectional view and a schematic vertical cross-sectional view of a conventional example of a sputtering apparatus.
2. Description of the Related Art Conventionally, as shown in FIG. 2, this type of sputtering apparatus is provided with a shutter 14 provided in a chamber 15 and turned horizontally into a chamber 21 by rotation of a shaft 16. The shutter 14 is large enough to cover the entire surface of the holder 17 so that spatters do not adhere to the holder 17.
【0005】さらに、このシャッタ14は旋回され2つ
の位置に位置決めされるようになっており、試しに行な
う空飛ばしのときは、シャッタ14の位置は閉位置とな
り、それ以外のウェハにスパッタリングするときは開位
置となっている。言い換えれば、シャッタ14の閉位置
にして、高周波および直流電圧が印加されたカソード1
8およびターゲット19からTiあるいはTiNをスパ
ッタリングさせシャッタ14上にTi膜あるいはTiN
膜をデポジットしていた。Further, the shutter 14 is turned to be positioned at two positions, so that the shutter 14 is in the closed position during a test fly-off, and is used for sputtering on other wafers. Is in the open position. In other words, with the shutter 14 in the closed position, the cathode 1 to which the high frequency and the DC voltage are applied is set.
8 and the target 19 are sputtered with Ti or TiN to form a Ti film or TiN on the shutter 14.
The membrane had been deposited.
【0006】[0006]
【発明が解決しようとする課題】上述した従来のスパッ
タ装置では、空飛ばし毎にシャッタ上にTi膜やTiN
膜が堆積し、やがては膜が剥離しパーティクル状異物と
なり、この異物がホルダに載置されたウェハに付着し品
質に重大な欠陥をもたらすことがある。そこで、従来
は、これを避けるため何回か空飛ばしを行なった後、シ
ャッタを交換していた。In the conventional sputtering apparatus described above, a Ti film or TiN
The film accumulates, and eventually the film peels off to form particulate foreign matter, which may adhere to the wafer placed on the holder and cause a serious defect in quality. Therefore, conventionally, in order to avoid this, the shutter has been replaced after performing several flying operations.
【0007】しかしながら、チャンバを大気にしてシャ
ッタの交換し、再びチャンバを真空にして復帰するのに
多大な時間を浪費するという問題がある。[0007] However, there is a problem that a lot of time is wasted in exchanging the shutter with the chamber being in the atmosphere and then returning the chamber to a vacuum again.
【0008】従って、本発明の目的は、チャンバを大気
にすることなく空飛ばし用部材を交換できるとともに空
飛ばし用部材のデポジット膜が剥れ落ちないスパッタ装
置を提供することである。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a sputtering apparatus which can replace a flying member without exposing the chamber to the atmosphere and in which a deposit film of the flying member does not peel off.
【0009】[0009]
【課題を解決するための手段】本発明の特徴は、円形状
の半導体基板であるウェハを載置するホルダと、このホ
ルダを収納し該ホルダと対向して配置されるターゲット
を具備するスパッタ装置において、前記ホルダの全面を
覆う程度の大きさであるとともに円形状の疑似ウェハを
載置するシャッタと、前記ホルダの全面を覆う位置と前
記ホルダの全面を露呈する位置とに前記シャッタを移動
させ位置決めする機構と、前記ホルダを露呈する位置に
おける前記シャッタの前記疑似ウェハの真上に対応する
前記チャンバ壁に形成され前記疑似ウェハが入り得る程
度の円形穴と該円形穴と直径が同程度の内径をもつとと
もにゲートバルブを介して前記チャンバに気密に取り付
けられる開閉蓋付き円筒部材と、この円筒部材に挿入さ
れる前記疑似ウェハを該円筒部材内に停留させる載置部
材と、この載置部材の該疑似ウェハの停留を解除する手
段と、前記ホルダから退避した前記シャッタの前記疑似
ウェハの載置面を貫通して前記円筒部材内に挿入し停留
が解除される前記疑似ウェハを乗せるとともに下降し前
記シャッタの前記載置面に前記疑似ウェハを移載する手
段とを備えるスパッタ装置である。SUMMARY OF THE INVENTION A feature of the present invention is that a sputtering apparatus includes a holder on which a wafer, which is a circular semiconductor substrate, is placed, and a target which accommodates the holder and is arranged to face the holder. A shutter for mounting a circular pseudo wafer having a size large enough to cover the entire surface of the holder, and moving the shutter to a position covering the entire surface of the holder and a position exposing the entire surface of the holder. A positioning mechanism, a circular hole formed in the chamber wall corresponding to a position directly above the pseudo wafer of the shutter at a position where the holder is exposed, and a circular hole having a diameter substantially equal to the diameter of the circular hole. A cylindrical member with an open / close lid having an inner diameter and airtightly attached to the chamber via a gate valve; A mounting member for retaining the pseudo wafer in the cylindrical member, means for releasing the pseudo wafer from the mounting member, and the cylindrical member penetrating the pseudo wafer mounting surface of the shutter retracted from the holder. Means for placing the pseudo wafer, which is inserted into the member and released from the stop, and lowering the pseudo wafer and transferring the pseudo wafer to the mounting surface of the shutter.
【0010】また、前記円筒部材内を真空排気する真空
ポンプを備えることが望ましい。さらに、前記シャッタ
の前記疑似ウェハの載置面に該疑似ウェハを周囲を囲み
取付け取外し可能な皿状部材を備えることが望ましい。It is preferable that a vacuum pump for evacuating the inside of the cylindrical member be provided. Further, it is preferable that a dish-shaped member which surrounds the pseudo wafer and is detachably attached to the mounting surface of the shutter on which the pseudo wafer is mounted.
【0011】[0011]
【発明の実施の形態】次に本発明について図面を参照し
て説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
【0012】図1(a)および(b)は本発明の一実施
の形態におけるスパッタ装置を示す上面図および断面図
である。このスパッタ装置は、図1に示すように、チャ
ンバ12の真空を破らずに空飛ばし用の円形状のダミー
ウェハ20をチャンバ12内のAの位置にあるシャッタ
9に乗せたりあるいはシャッタ9に乗せられたダミーウ
ェハ20をチャンバ12から取り出したりすることがで
きるダミーウェハの取入れ取出し機構1を設けたことで
ある。FIGS. 1A and 1B are a top view and a sectional view showing a sputtering apparatus according to an embodiment of the present invention. As shown in FIG. 1, this sputtering apparatus mounts a dummy wafer 20 having a circular shape for flying without breaking the vacuum of the chamber 12 on a shutter 9 at a position A in the chamber 12 or on the shutter 9. That is, a dummy wafer loading / unloading mechanism 1 capable of removing the dummy wafer 20 from the chamber 12 is provided.
【0013】また、この取入れ取出し機構1は、ホルダ
17の全面を露呈する位置Aにおけるシャッタ9のダミ
ーウェハ20の真上に対応するチャンバ12の壁に形成
されダミーウェハ20が入り得る程度の円形状の穴12
aとこの穴12aと直径が同程度の内径をもつとともに
ゲートバルブ3を介してチャンバ12に気密に取り付け
られる開閉し得る蓋2付き円筒状の小室1aと、この小
室1aに挿入されるダミーウェハ20を小室1a内に停
留させるシュー5と、このシュー5を引込ませダミーウ
ェハの停留を解除するソレノイド4と、ホルダ17から
退避したシャッタ9のダミーウェハ20の載置面9bを
貫通して小室1a内に挿入し停留が解除されたダミーウ
ェハ20を乗せるとともに下降してシャッタ9の載置面
9bにダミーウェハ20を移載する突き上げロッド6と
で構成されている。The take-in / take-out mechanism 1 has a circular shape formed on the wall of the chamber 12 corresponding to the position directly above the dummy wafer 20 of the shutter 9 at the position A where the entire surface of the holder 17 is exposed, and into which the dummy wafer 20 can enter. Hole 12
and a cylindrical small chamber 1a having an opening and closing lid 2 having an inner diameter approximately equal to the diameter of the hole 12a and being airtightly attached to the chamber 12 via a gate valve 3, and a dummy wafer 20 inserted into the small chamber 1a. 5 that stays in the small chamber 1a, the solenoid 4 that retracts the shoes 5 to release the dummy wafer, and the mounting surface 9b of the dummy wafer 20 of the shutter 9 that is retracted from the holder 17 and enters the small chamber 1a. The push-up rod 6 is configured to place the dummy wafer 20 that has been inserted and the stoppage of which is released, and to move down and transfer the dummy wafer 20 to the mounting surface 9 b of the shutter 9.
【0014】なお、シャッタ9の旋回角度はチャンバ1
2の容積が大きくならないように、シャッタ9がダミー
ウェハを移載する位置をホルダ17が露呈する程度にす
ることが望ましい。そして、チャンバ12の内壁もシャ
ッタ9が当らない程度にシャッタ9の外形に倣うように
製作することが望ましい。また、シャッタ9のダミーウ
ェハ20の載置面9b周辺にダミーウェハ20を囲むよ
うに皿状部材9aを設け、ダミーウェハ20およびその
周囲に付着する膜が剥れてもチャンバ12内に落ち込ま
ないようにする。なお、この皿状部材9aは、交換でき
るように、シャッタ9から取付け取外すことができるよ
うにすることが望ましい。Note that the rotation angle of the shutter 9 is
It is desirable that the position at which the shutter 9 transfers the dummy wafer is set to such an extent that the holder 17 is exposed so that the volume of 2 does not increase. It is desirable that the inner wall of the chamber 12 be manufactured so as to follow the outer shape of the shutter 9 so that the shutter 9 does not hit the inner wall. Further, a dish-like member 9a is provided around the mounting surface 9b of the dummy wafer 20 of the shutter 9 so as to surround the dummy wafer 20, so that the dummy wafer 20 and the film adhering therearound are peeled off so as not to fall into the chamber 12. . It is desirable that the dish-shaped member 9a can be attached to and detached from the shutter 9 so that it can be replaced.
【0015】一方、取入れ取出し機構1の小室1aはチ
ャンバ12の容積に比べ小さいものの、チャンバ12の
真空排気時間をより早くするために、小室1aのリーク
弁7の後段の配管13には開閉弁8と機械的真空ポンプ
であるロータリーポンプを接続することが望ましい。On the other hand, although the small chamber 1a of the inlet / outlet mechanism 1 is smaller than the volume of the chamber 12, in order to make the vacuum evacuation time of the chamber 12 faster, the on-off valve 13 It is desirable to connect the rotary pump 8 which is a mechanical vacuum pump with the rotary pump 8.
【0016】次に、Ti膜形成からTiN膜形成に切替
えることを想定しこのスパッタ装置の動作を説明する。
まず、図示していない図面の左側のロードロック室に未
処理のウェハの複数枚を収納したウェハカセットをエレ
ベータ台に乗せる。この操作と平行して小室1aの蓋2
を開けダミーウェハ20を突出したシュー5の上に乗せ
る。次に、ロードロック室とチャンバ12および小室1
aを真空排気する。このとき小室1aのリーク弁7を閉
じ開閉弁8を開きロータリーポンプで真空排気する。Next, the operation of this sputtering apparatus will be described on the assumption that the formation of a Ti film is switched to the formation of a TiN film.
First, a wafer cassette containing a plurality of unprocessed wafers is loaded on an elevator table in a load lock chamber on the left side of the drawing (not shown). In parallel with this operation, the lid 2 of the small chamber 1a
And put the dummy wafer 20 on the protruding shoe 5. Next, the load lock chamber and the chamber 12 and the small chamber 1
a is evacuated. At this time, the leak valve 7 of the small chamber 1a is closed and the on-off valve 8 is opened to evacuate by a rotary pump.
【0017】次に、チャンバ12と小室1aの真空度が
同程度になったら、ゲートバルブ3で穴12aを開け、
突き上げロッド6を上昇させダミーウェハ20に当接さ
せダミーウェハ20をシュー5より浮かせ、ソレノイド
4を動作させシュー5を引込める。そして、突き上げロ
ッド6を下降させダミーウェハ20をシャッタ9の載置
面9bに移載する。そして、ゲートバルブ3により穴1
2aを閉じ、不要なガスが小室1aに入らないようにす
る。また、開閉弁8を閉じリーク弁7を開き小室1aを
大気にしても良い。次に、ダミーウェハが移載されたシ
ャッタ9はロータリーソレノイド11による旋回軸10
の回転とともに旋回され、Aの位置からBの位置に移動
する。Next, when the degree of vacuum in the chamber 12 and the small chamber 1a becomes substantially the same, a hole 12a is opened by the gate valve 3, and
The push-up rod 6 is raised to abut on the dummy wafer 20, the dummy wafer 20 is lifted from the shoe 5, the solenoid 4 is operated, and the shoe 5 is retracted. Then, the push-up rod 6 is lowered to transfer the dummy wafer 20 to the mounting surface 9 b of the shutter 9. Then, the gate valve 3 opens the hole 1
2a is closed to prevent unnecessary gas from entering the small chamber 1a. Alternatively, the on-off valve 8 may be closed, the leak valve 7 may be opened, and the small chamber 1a may be set to the atmosphere. Next, the shutter 9 on which the dummy wafer has been transferred is rotated by a rotary shaft 11 by a rotary solenoid 11.
Is rotated together with the rotation of, and moves from the position A to the position B.
【0018】次に、チャンバ12が所定の真空度に達し
たら、シャッタ9をBの位置にし、窒素ガスを含むエッ
チングガスをチャンバ12に導入し空飛ばしのスパッタ
を行ないターゲットの真下にあるダミーウェハ20をデ
ポジットする。そして、シャッタ9を旋回させBからA
の位置に退避させる。次に、ウェハカセットからエレベ
ータの上下動とロボットアームの移動動作により順次ウ
ェハをホルダ17に移載しスパッタリングを行なう。Next, when the chamber 12 reaches a predetermined degree of vacuum, the shutter 9 is moved to the position B, and an etching gas containing nitrogen gas is introduced into the chamber 12 to perform a sputtering process, and a dummy wafer 20 just below the target is formed. Will be deposited. Then, the shutter 9 is turned to move from B to A.
Evacuate to the position. Next, wafers are sequentially transferred from the wafer cassette to the holder 17 by vertically moving the elevator and moving the robot arm to perform sputtering.
【0019】また、逆に、TiN膜形成からTi膜形成
に切替えるときも、前述と同じように、退避していたシ
ャッタ9を旋回させBの位置にし初期の空飛ばしを行な
ってから、シャッタ9をAの位置に退避させ未処理のウ
ェハをスパッタリングする。Conversely, when switching from the TiN film formation to the Ti film formation, the retracted shutter 9 is turned to the position B to perform the initial flying, and then the shutter 9 is moved. Is retracted to the position A, and an unprocessed wafer is sputtered.
【0020】次に、ダミーウェハ20のデポジット膜が
厚く堆積し剥離しそうになりダミーウェハを交換しなけ
ればならない場合の動作を説明する。Next, an operation in the case where the deposit film on the dummy wafer 20 is thickly deposited and is likely to be peeled off and the dummy wafer must be replaced will be described.
【0021】チャンバ12が真空中であるときに交換す
る場合は、まず、シャッタ9をAの位置にし、ゲートバ
ルブ3を開け、突き上げロッド6を上昇させダミーウェ
ハ20を先端に乗せ小室1aに入れ、ソレノイド4によ
りシュー5を突出させてから、突き上げロッド6を下降
させシュー5にダミーウェハ20を移載する。そして、
突き上げロッドを下降させ小室1aから脱出してから、
ゲートバルブ3を閉じ、リーク弁7を開き小室1aを大
気にし、蓋2を開けダミーウェハ20を取り出し、新な
ダミーウェハと交換する。When replacing the chamber 12 while the chamber 12 is in a vacuum, first, the shutter 9 is set to the position A, the gate valve 3 is opened, the push-up rod 6 is raised, the dummy wafer 20 is put on the tip, and the small wafer 1a is put into the small chamber 1a. After the shoe 5 is projected by the solenoid 4, the push-up rod 6 is lowered to transfer the dummy wafer 20 to the shoe 5. And
After lowering the push-up rod to escape from the small chamber 1a,
The gate valve 3 is closed, the leak valve 7 is opened, the small chamber 1a is opened to the atmosphere, the lid 2 is opened, the dummy wafer 20 is taken out, and replaced with a new dummy wafer.
【0022】また、チャンバ12が大気の場合は、開閉
弁8を閉じリーク弁7を開き小室1aを大気にしてか
ら、ゲートバルブ3を開き、ダミーウェハ20を小室1
aを入れるように突き上げロッド6を上昇させ、蓋2を
開けて小室1aよりダミーウェハ20を取り出し、新し
いダミーウェハを突き上げロッド6の戦端に乗せ、突き
上げロッド6を下降させホルダ17から退避しているシ
ャッタ9の載置面9bにダミーウェハ20を移載する。When the chamber 12 is in the atmosphere, the on-off valve 8 is closed, the leak valve 7 is opened to open the small chamber 1a to the atmosphere, and then the gate valve 3 is opened to place the dummy wafer 20 in the small chamber 1.
a, the lid 2 is opened, the lid 2 is opened, the dummy wafer 20 is taken out from the small chamber 1a, a new dummy wafer is placed on the front end of the push-up rod 6, the push-up rod 6 is lowered, and the shutter retracted from the holder 17. The dummy wafer 20 is mounted on the mounting surface 9b of the substrate 9.
【0023】このように、チャンバ12が真空中でも大
気中でも空飛ばし用部材であるダミーウェハを交換でき
る。なお、ダミーウェハの材質は何でも良く、要は処理
されるウェハと同じ円形状であれば良い。As described above, the dummy wafer, which is a flying member, can be exchanged even when the chamber 12 is in a vacuum or in the air. The material of the dummy wafer may be any material, and it is essential that the dummy wafer has the same circular shape as the wafer to be processed.
【0024】[0024]
【発明の効果】以上説明したように本発明は、空飛ばし
用のダミーウェハを載置するとともに処理すべきウェハ
を載置するホルダを覆う程度の大きさのシャッタと、こ
のシャッタをホルダの上とホルダを露呈する位置に移動
位置決めする機構と、シャッタがホルダから退避する位
置の真上のチャンバにゲートバルブを介してダミーウェ
ハが出し入れできる小室とを設けることによって、チャ
ンバの真空を開放することやシャッタの交換が無くな
り、その分装置の停止が少なく装置の稼働率が向上する
という効果がある。As described above, according to the present invention, there is provided a shutter having a size enough to cover a holder for mounting a dummy wafer for flying and mounting a wafer to be processed, and to mount the shutter on the holder. By providing a mechanism for moving and positioning the holder to a position where the holder is exposed and a small chamber through which a dummy wafer can be inserted and removed via a gate valve in a chamber directly above a position where the shutter is retracted from the holder, the vacuum in the chamber can be released or the shutter can be released. This eliminates the need for replacement, and reduces the number of stoppages of the apparatus, thereby improving the operation rate of the apparatus.
【0025】また、シャッタに載置されたダミーウェハ
の周囲に皿状部材を設けることによって、デポジット膜
の剥れ物質がチャンバ内に落ち込むことが無くなり、従
来、起きていた品質の欠陥が皆無となった。Further, by providing the dish-shaped member around the dummy wafer placed on the shutter, the substance peeling off the deposit film does not fall into the chamber, and the quality defect that has occurred conventionally has been eliminated. Was.
【図1】本発明の一実施の形態におけるスパッタ装置を
示す上面図および断面図である。FIG. 1 is a top view and a cross-sectional view illustrating a sputtering apparatus according to an embodiment of the present invention.
【図2】従来の一例のスパッタ装置の模式横断面図およ
び模式縦断面図である。FIG. 2 is a schematic cross-sectional view and a schematic vertical cross-sectional view of a conventional example of a sputtering apparatus.
1 取入れ取出し機構 1a 小室 2 蓋 3 ゲートバルブ 4 ソレノイド 5 シュー 6 突き上げロッド 7 リーク弁 8 開閉弁 9,14 シャッタ 9a 皿状部材 9b 載置面 10 旋回軸 11 ロータリーソレノイド 12,15 チャンバ 12a 穴 13 配管 16 シャフト 17 ホルダ 18 カソード 19 ターゲット 20 ダミーウェハ DESCRIPTION OF SYMBOLS 1 Take-in and take-out mechanism 1a Small chamber 2 Lid 3 Gate valve 4 Solenoid 5 Shoe 6 Push-up rod 7 Leak valve 8 On-off valve 9, 14 Shutter 9a Plate member 9b Mounting surface 10 Rotating shaft 11 Rotary solenoid 12, 15 Chamber 12a Hole 13 Piping 16 Shaft 17 Holder 18 Cathode 19 Target 20 Dummy wafer
Claims (3)
するホルダと、このホルダを収納し該ホルダと対向して
配置されるターゲットを具備するスパッタ装置におい
て、前記ホルダの全面を覆う程度の大きさであるととも
に円形状の疑似ウェハを載置するシャッタと、前記ホル
ダの全面を覆う位置と前記ホルダの全面を露呈する位置
とに前記シャッタを移動させ位置決めする機構と、前記
ホルダを露呈する位置における前記シャッタの前記疑似
ウェハの真上に対応する前記チャンバ壁に形成され前記
疑似ウェハが入り得る程度の円形穴と該円形穴と直径が
同程度の内径をもつとともにゲートバルブを介して前記
チャンバに気密に取り付けられる開閉蓋付き円筒部材
と、この円筒部材に挿入される前記疑似ウェハを該円筒
部材内に停留させる載置部材と、この載置部材の該疑似
ウェハの停留を解除する手段と、前記ホルダから退避し
た前記シャッタの前記疑似ウェハの載置面を貫通して前
記円筒部材内に挿入し停留が解除される前記疑似ウェハ
を乗せるとともに下降し前記シャッタの前記載置面に前
記疑似ウェハを移載する手段とを備えることを特徴とす
るスパッタ装置。In a sputtering apparatus having a holder for mounting a wafer, which is a circular semiconductor substrate, and a target for accommodating the holder and disposed opposite to the holder, the sputtering apparatus has a size sufficient to cover the entire surface of the holder. A shutter for mounting a pseudo wafer having a size and a circular shape, a mechanism for moving and positioning the shutter to a position covering the entire surface of the holder and a position exposing the entire surface of the holder, and exposing the holder A circular hole formed in the chamber wall corresponding to a position directly above the pseudo wafer of the shutter at the position, and having an inside diameter approximately the same as the diameter of the circular hole and capable of receiving the pseudo wafer, and via the gate valve. A cylindrical member with an open / close lid that is hermetically attached to a chamber, and a mounting for retaining the pseudo wafer inserted into the cylindrical member in the cylindrical member A member, means for releasing the placement of the pseudo wafer on the mounting member, and insertion of the shutter retracted from the holder through the mounting surface of the pseudo wafer into the cylindrical member to release the retention. Means for placing the pseudo wafer and moving down to transfer the pseudo wafer to the mounting surface of the shutter.
プを備えることを特徴とする請求項1記載のスパッタ装
置。2. The sputtering apparatus according to claim 1, further comprising a vacuum pump for evacuating the inside of the cylindrical member.
に該疑似ウェハを周囲を囲み取付け取外し可能な皿状部
材を備えることを特徴とする請求項1および請求項2記
載のスパッタ装置。3. The sputter apparatus according to claim 1, further comprising a dish-shaped member which surrounds the pseudo wafer and is detachably attached to a surface of the shutter on which the pseudo wafer is mounted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8338486A JP2978802B2 (en) | 1996-12-18 | 1996-12-18 | Sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8338486A JP2978802B2 (en) | 1996-12-18 | 1996-12-18 | Sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10176268A JPH10176268A (en) | 1998-06-30 |
| JP2978802B2 true JP2978802B2 (en) | 1999-11-15 |
Family
ID=18318615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8338486A Expired - Lifetime JP2978802B2 (en) | 1996-12-18 | 1996-12-18 | Sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2978802B2 (en) |
-
1996
- 1996-12-18 JP JP8338486A patent/JP2978802B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10176268A (en) | 1998-06-30 |
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