JP2990352B2 - Thermoelectric element manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric element having an element made of P-type and N-type thermoelectric materials, and capable of performing temperature difference power generation (thermoelectric power generation) by the Seebeck effect and electronic cooling / heating by the Peltier effect. And its manufacturing method.

[0002]

2. Description of the Related Art A thermoelectric element is manufactured by joining a P-type thermoelectric material and an N-type thermoelectric material via a metal electrode to form a PN junction pair. This thermoelectric element generates electric power based on the Seebeck effect by giving a temperature difference between the junction pair, and as a power generation device, and when current flows through the element, cooling occurs on one side of the junction and heat is generated on the other side It is used as a cooling device using the so-called Peltier effect or as a precision temperature control device.

[0003] Generally, a thermoelectric element is composed of a plurality of columnar (rectangular) P-type and N-type thermoelectric material pieces (hereinafter, referred to as elements) and two substrates provided with metal electrodes for joining them. It is configured. In a state where the P-type and N-type elements are sandwiched between two substrates, one end surface is fixed to a metal electrode of one substrate, and the other end surface is fixed to a metal electrode of the other substrate. PN junction pairs are formed via the PN junction pairs, and the PN junction pairs are connected in series.

[0004]

However, since the above-mentioned element is fragile and easily cleaved, for example, formed of a Bi-Te-based material or the like, particularly, in the process of manufacturing the thermoelectric element, the element is subject to stress due to stress. It was easy to be destroyed. Since the elements are connected in series, an open failure (disconnection) or a short failure may be caused by some of the destroyed elements. As a result, the yield has been reduced.

In addition to the above columnar elements, for example, as disclosed in JP-A-8-97472,
In some cases, the cross-sectional area in the height direction changes intermittently, but also in this case, similarly, the portion that changes intermittently may be broken by stress. The present invention has been made in order to solve the above problems, and has an object to provide a thermoelectric element including an element having high mechanical strength and capable of improving the yield, and a method for manufacturing the same. And

[0006]

In order to solve the above problems, a P-type element made of a P-type thermoelectric material, an N-type element made of an N-type thermoelectric material, and a pair of these P-type and N-type heterogeneous elements are provided. A first substrate having a metal electrode capable of being joined to form a PN junction pair, and a second substrate having the metal electrode disposed together with the first substrate so as to sandwich the P-type and N-type elements. Wherein the P-type element and the N-type element each have a bottom surface of a predetermined shape and an upper surface parallel to the bottom surface, and the area of a cross section parallel to the bottom surface and the upper surface is The P-type element and the N
The mold element has a configuration in which the bottom surface is fixed to the metal electrode of the first substrate and the upper surface is fixed to the metal electrode of the second substrate.

According to the present invention, a P-type element and an N-type element
Since the mold element is formed in a shape in which the area of the cross section parallel to the bottom surface and the top surface continuously decreases from the bottom surface to the top surface, compared to a conventional columnar (rectangular) element having the same characteristics, The area of the bottom surface of each of the P-type and N-type elements and the area of the fixing surface with the first substrate are enlarged, and the P-type and N-type elements are protected against external impact and the like.
The bonding strength with the first substrate is improved.

[0008] In addition, since the P-type and N-type elements have the above-mentioned shapes, the mechanical strength of the P-type and N-type elements themselves against shear stress and the like can be improved, and the yield can be improved. Specifically, P-type and N
As the type thermoelectric material, for example, a Bi-Te-based material, Fe
-Si-based materials, Si-Ge-based materials, Co-Sb-based materials, and the like.

Further, the shape of the bottom surface and the top surface may be any shape such as a square such as a square or a rectangle, another polygon, or a circle. The present invention is a thermoelectric element, wherein the cross-sectional shape of the P-type element and the N-type element is square. According to the present invention, since the cross-sectional shapes of the P-type element and the N-type element are square, the P-type element and the N-type element can be easily formed. In addition, the number of steps for forming the P-type and N-type elements can be minimized.

The present invention provides a P-type element made of a P-type thermoelectric material, an N-type element made of an N-type thermoelectric material,
A first substrate having a metal electrode capable of forming a PN junction pair by joining these P-type and N-type heterogeneous elements one by one, and a state in which the P-type and N-type elements are sandwiched together with the first substrate. A second substrate having the metal electrode disposed thereon, wherein the P-type element and the N-type element each have a bottom surface having a predetermined shape and an upper surface parallel to the bottom surface. The area of the parallel cross section is formed in a shape that continuously decreases from the bottom surface toward the top surface, and the P-type element and the N-type element have the bottom surfaces formed on the metal electrodes of the first substrate,
In a thermoelectric element having an upper surface fixed to a metal electrode of the second substrate, the P-type element and the N-type
An insulating layer was formed in the gap between the mold elements.

According to the present invention, since the P-type element and the N-type element have a plate shape including the insulating layer formed in the gap, the P-type element and the N-type element can be compared with the case where the P-type element and the N-type element are independent columns. P type and N for shear stress etc.
The mechanical strength of the mold element itself is improved, and the yield can be improved. The present invention provides a P-type element made of a P-type thermoelectric material, an N-type element made of an N-type thermoelectric material, and a metal electrode capable of forming a PN junction pair by joining these P-type and N-type heterogeneous elements in pairs. A method for manufacturing a thermoelectric device, comprising: a first substrate having: a first substrate; and a second substrate having the metal electrode, the second substrate having the first substrate and the P-type and N-type elements sandwiched therebetween. The P-type element and the N-type element each have a bottom surface of a predetermined shape and an upper surface parallel to the bottom surface, and the area of a cross section parallel to the bottom surface and the upper surface is continuous from the bottom surface to the upper surface. The P-type element and the N-type element are bonded to each other with an insulating adhesive, and the bottom surface is fixed to the metal electrode of the first substrate, and cut if necessary. After deleting method of the thermoelectric elements, wherein the PN junction pair is formed by securing the second substrate on the upper surface.

According to the present invention, each of the P-type element and the N-type element has a bottom surface having a predetermined shape and an upper surface parallel to the bottom surface, and the area of the cross section parallel to the bottom surface and the upper surface is equal to the above-mentioned area. The P-type element and the N-type element are formed into a shape that continuously decreases from the bottom surface toward the top surface, and the P-type element and the N-type element are bonded together with an insulating adhesive, and then the bottom surface is fixed to the metal electrode of the first substrate. After cutting and removing as necessary, the second substrate is fixed to the upper surface, so that the P-type and N-type elements are firmly fixed to the first substrate together with the insulating adhesive. , P-type and N-type elements are separated from the substrate and fall down.

The present invention provides a P-type element made of a P-type thermoelectric material, an N-type element made of an N-type thermoelectric material,
A first substrate having a metal electrode capable of forming a PN junction pair by joining these P-type and N-type heterogeneous elements one by one, and a state in which the P-type and N-type elements are sandwiched together with the first substrate. A second substrate having the metal electrode disposed thereon, wherein the P-type thermoelectric material and the N-type thermoelectric material are formed in a plate shape having fins, and the P-type thermoelectric material is formed. After the material and the N-type thermoelectric material are bonded together with an insulating adhesive, unnecessary portions are removed by cutting and polishing, and the bottom surface is fixed to the metal electrode of the first substrate, and cut as necessary. A method for manufacturing a thermoelectric element, wherein a PN junction pair is formed by fixing the second substrate on the upper surface after the deletion.

According to the present invention, the P-type thermoelectric material and N
The thermoelectric material is formed in a plate shape having fins, the P-type thermoelectric material and the N-type thermoelectric material are bonded together with an insulating adhesive, and unnecessary portions are removed by cutting and polishing. Is fixed to the metal electrode of the first substrate, cut and removed as necessary, and then the second substrate is fixed to the upper surface thereof. It becomes a state firmly fixed to one substrate,
It is reduced that the P-type and N-type elements separate from the substrate or fall down. Further, a fine element can be formed.

A P-type element made of a P-type thermoelectric material;
A first substrate having an N-type element made of an N-type thermoelectric material, a metal electrode capable of forming a PN junction pair by joining these P-type and N-type heterogeneous elements one by one, and the first substrate; A second substrate having the metal electrode, the second substrate having the metal electrode, wherein the P-type thermoelectric material and the N-type thermoelectric material are finned. Each of the fins has a bottom surface of a predetermined shape and an upper surface parallel to the bottom surface, and each of the fins has a cross-sectional area parallel to the bottom surface and the top surface, and one of the fins extends from the bottom surface to the top surface. The P-type thermoelectric material and the N-type thermoelectric material are bonded together with an insulating adhesive, and the other is formed into a shape that continuously decreases from the bottom surface toward the top surface. From the state A PN junction pair is formed by fixing the bottom portion to the metal electrode of the first substrate and fixing the second substrate on the top surface thereof. Device manufacturing method.

According to the present invention, the fins of the P-type thermoelectric material and the N-type thermoelectric material formed into a plate shape having fins each have a bottom surface having a predetermined shape and an upper surface parallel to the bottom surface. The bottom surface and the area of the cross section parallel to the upper surface, one is formed in a shape that continuously decreases from the bottom surface toward the upper surface, and the other continuously increases from the bottom surface toward the upper surface. After forming the P-type thermoelectric material and the N-type thermoelectric material together with an insulating adhesive, unnecessary portions are removed by cutting and polishing, and the P-type thermoelectric material and the N-type thermoelectric material are cut. In order to fix the surface having a larger area to the metal electrode of the first substrate, cut and delete as necessary, and then fix the second substrate thereon,
The P-type and N-type elements are firmly fixed to the first substrate together with the insulating adhesive, so that the P-type and N-type elements are less likely to separate or fall from the substrate. Further, a fine element can be formed.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to FIGS. FIG.
1 is a perspective view showing an outline of the thermoelectric element according to the present invention, and FIG. 2 is a longitudinal sectional view of the thermoelectric element shown in FIG.

As shown in FIGS. 1 and 2, a thermoelectric element 1 of this embodiment includes a P-type element 3 made of a P-type thermoelectric material, an N-type element 4 made of an N-type thermoelectric material, It comprises a substrate 2B (first substrate) and 2A (second substrate) having a metal electrode 5 capable of forming a PN junction pair by joining pairs 3 and 4 one by one. P
The type element 3 and the N-type element 4 are, for example, Bi
-It is composed of a sintered body of a Te-based material.

Here, the main characteristics of the P-type element 3 are, for example, a Seebeck coefficient of 202 μV / K, a specific resistance of 0.93 mΩcm, and a thermal conductivity of 1.46 W / m.
K, on the other hand, the main characteristics of the N-type element 4 are, for example, a Seebeck coefficient of -188 μV / K, a specific resistance of 0.97 mΩcm, and a thermal conductivity of 1.61 W / mK.

The P-type element 3 is, as shown in FIG.
It has a bottom surface 3b (for example, square in shape) and an upper surface 3a (for example, square in shape) parallel to the bottom surface 3b, and the area of a cross section parallel to the bottom surface 3b and the upper surface 3a is
It is formed in a shape that continuously decreases from b to the upper surface 3a. The bottom surface 3b of the P-type element 3 corresponds to the metal electrode 5 of the substrate 2B, and the top surface 3a corresponds to the metal electrode 5 of the substrate 2A (FIG. 2).
i) and are fixed via the bonding layer 7 and the like.

Similarly to the P-type element 3, the N-type element 4 has a bottom surface 4b (for example, a square shape) and an upper surface 4a (for example, a square shape) parallel to the bottom surface 4b. The area of the cross section parallel to the bottom surface 4b and the top surface 4a is formed in a shape that continuously decreases from the bottom surface 4b to the top surface 4a. The N-type element 4 has a bottom surface 4b formed on the metal electrode 5 of the substrate 2B and a top surface 4a formed on the metal electrode 5 of the substrate 2A (FIG. 2).
(For example, Ni) and the bonding layer 7.

Here, the upper surface 3a of each element 3, 4
The area ratio between the bottom surface 4a and the bottom surfaces 3b and 4b is set in a range of, for example, 1: 1 to 1:10 in consideration of the interval between the elements 3 and 4 and the height of the elements 3 and 4. ing. The P-type element 3 and the N-type element 4 are sandwiched between the two substrates 2A and 2B, and one end is fixed to the metal electrode 5 of the substrate 2A and the other end is fixed to the metal electrode 5 of the substrate 2B. A PN junction pair is formed via the metal electrode 5, and the PN junction pairs are connected in series.

The P-type element 3 and the N-type element 4 configured as described above are different from conventional columnar (rectangular) elements having the same characteristics in that the bottom surfaces 3b and 4b of the elements 3 and 4 and the substrate 2B The area of the fixing surface with the substrate 2 is increased, so that the substrate
The bonding strength for B is improved. Each of the elements 3 and 4 is formed so that the area of a cross section parallel to the bottom surfaces 3b and 4b and the top surfaces 3a and 4a decreases continuously from the bottom surfaces 3b and 4b toward the top surfaces 3a and 4a. Therefore, the mechanical strength of each of the elements 3 and 4 against shear stress is improved, and the yield can be improved.

Next, a method of manufacturing the thermoelectric element having the above-described configuration will be described, focusing on the portion according to the present invention. In this manufacturing method, first, the P-type thermoelectric material wafer 8 and the N-type
As shown in FIG. 3A, the mold thermoelectric material wafer 9 has a bottom surface and a top surface parallel to the bottom surface, and the area of the cross section parallel to the bottom surface and the top surface continuously decreases from the bottom surface to the top surface. It is formed in the shape to be. Subsequently, as shown in FIG. 3B, the P-type and N-type thermoelectric material wafers 8 and 9 are bonded together with an insulating adhesive 10 to form a PN thermoelectric material wafer 11.

Subsequently, as shown in FIG. 3C, the bottom surface of each of the P-type and N-type thermoelectric materials constituting the PN thermoelectric material wafer 11 is formed so as to be fixed to the metal electrode 5 of the substrate 2B. . Here, the bottom surfaces of the P-type and N-type thermoelectric material wafers 8 and 9 constituting the PN thermoelectric material wafer 11 are fixed to the substrate 2B by, for example, soldering (not shown) via Ni plating or the like (not shown). Have been. P-type element 3
And the N-type element 4 include the PN thermoelectric material wafer 1
1 can be formed in a state of being fixed to the substrate 2B by cutting and deleting.

In processing the P-type thermoelectric material wafer 8 and the N-type thermoelectric material wafer 9, for example, a dicing blade used for cutting a silicon semiconductor or the like can be used. The shape (thickness, curve at the tip, etc.) of the blade of the dicing blade is selected in consideration of the shapes of the P-type thermoelectric material wafer 8 and the N-type thermoelectric material wafer 9, thereby forming a desired shape. can do.

When cutting or deleting the thermoelectric material wafer 11, a dicing blade or a wire saw is used.
Selection is made in consideration of the spacing between the P-type elements 3 and the (N-type elements) and the shapes of the P-type elements 3 and the (N-type elements), thereby forming the elements 3 and 4 having a desired shape and spacing. Can be. In this manufacturing method,
First, a P-type thermoelectric material wafer 8 and an N-type thermoelectric material wafer 9 are formed in a structure having fins as shown in FIG. Next, as shown in FIG. 4B, an insulating adhesive 10 is applied to one of the P-type and N-type thermoelectric material wafers 8 and 9.
As shown in FIG. 4C, the P-type and N-type thermoelectric material wafers 8 and 9 are combined with the insulating adhesive 10 interposed therebetween, and unnecessary portions are cut and deleted.
A PN thermoelectric material wafer 11 as shown in FIG.

At this time, the insulating adhesive 10 may be filled after the P-type and N-type thermoelectric material wafers 8 and 9 are combined. Subsequently, as shown in FIG. 4 (e), a P-type, which constitutes the PN thermoelectric material wafer 11,
The N-type thermoelectric material wafers 8 and 9 are formed such that the bottom surfaces thereof are fixed to the metal electrodes 5 of the substrate 2B. Here, the bottom surfaces of the P-type and N-type thermoelectric material wafers 8 and 9 constituting the PN thermoelectric material wafer 11 are fixed to the substrate 2B by, for example, soldering (not shown) via Ni plating or the like (not shown). Have been. The P-type element 3 and the N-type element 4
By cutting and removing this PN thermoelectric material wafer 11, each has a bottom surface and an upper surface parallel to the bottom surface,
It can be formed in a state in which the area of the cross section parallel to the bottom surface and the top surface decreases continuously from the bottom surface to the top surface, and is fixed to the substrate 2B.

In processing the P-type thermoelectric material wafer 8 and the N-type thermoelectric material wafer 9, for example, a dicing blade or a wire saw can be used. When cutting or deleting the thermoelectric material wafer 11,
For example, a dicing blade or the like is selected in consideration of the distance between the P-type elements 3 and the (N-type elements) and the shape of the P-type elements 3 and the (N-type elements), whereby an element having a desired shape and distance is selected. 3, 4 can be formed.

In this manufacturing method, first, one of the P-type thermoelectric material wafer 8 and the N-type thermoelectric material wafer 9 is
(A) i, and the other is formed in a structure having fins as shown in FIG. 5 (a) ii. Next, as shown in FIG. 5 (b), one of the P-type and N-type thermoelectric material wafers 8 and 9 is filled with an insulating adhesive 10, and as shown in FIG.
After combining the mold and N-type thermoelectric material wafers 8 and 9 with the insulating adhesive 10 interposed therebetween, unnecessary portions are cut and deleted to obtain a PN thermoelectric material wafer 11 as shown in FIG. 5D.

Here, when filling the insulating adhesive 10, the P-type and N-type thermoelectric material wafers 8 and 9 may be combined and then filled. Subsequently, as shown in FIG. 5 (e), a P-type, which constitutes the PN thermoelectric material wafer 11,
The larger the cross-sectional area of each of the N-type thermoelectric material wafers 8 and 9,
It is formed so as to be fixed to the metal electrode 5 of the substrate 2B. Here, the P-type and N-type thermoelectric material wafers 8 and 9 constituting the PN thermoelectric material wafer 11 are fixed to the substrate 2B by, for example, soldering (not shown) via Ni plating or the like (not shown). I have. P-type element 3 and N-type element 4
Can be formed in a state in which each of the PN thermoelectric material wafers 11 is fixed to the substrate 2B by cutting and deleting.

In processing the P-type thermoelectric material wafer 8 and the N-type thermoelectric material wafer 9, for example, a dicing blade, a wire saw, an end mill, or the like can be used. When cutting or deleting the thermoelectric material wafer 11, for example, a dicing blade or the like is used to move the P-type element 3, the interval between the (N-type elements),
Selection is made in consideration of the shapes of the mold elements 3 and (N-type elements), whereby the elements 3 and 4 having desired shapes and intervals can be formed.

Then, the P-type and N-type layers formed on the substrate 2B are formed.
The upper surfaces 3a, 4a of the mold elements 3, 4 are heated while being pressed while being aligned with the metal electrodes 5 to be bonded of the substrate 2A opposed to the substrate 2B to which the respective elements are bonded. The solder 4a (not shown) is melted, and the elements 3, 4 and the metal electrode 5 are joined to complete the thermoelectric element 1 having a PN junction on the substrates 2B, 2A.

As described above, after the P-type and N-type elements 3 and 4 are bonded to each other with the insulating adhesive and the bottom surfaces 3b and 4b are fixed to the metal electrode 5 of the substrate 2B, Since the substrate 2A is joined, each element is firmly fixed to the substrate 2B, so that the P-type and N-type elements are less likely to separate or fall from the substrate 2B.

The size of the elements 3 and 4 can be reduced by improving the mechanical strength of the elements 3 and 4 bonded together with the insulating adhesive 10 and the bonding strength between the elements 3 and 4 and the substrate 2B. And more PN junction pairs can be formed in the thermoelectric element 1 of the same size. Therefore, even with a small temperature difference, a large amount of electric power can be generated, and the thermoelectric element 1 can be used for power generation of various portable electronic devices such as an electronic wristwatch.

Further, the thermoelectric element 1 exhibits a great effect even when used as a cooling element. That is, the cooling performance is determined by the power input to the thermoelectric element 1,
In the case of the thermoelectric element 1, it is possible to supply a predetermined electric power with a low current. As a result, it is not necessary to make the input / output wiring thicker or to use a large current type power supply. Therefore, the thermoelectric element 1 can be used for cooling various electronic devices such as a semiconductor laser, for example.

The sizes, materials, and characteristics of the elements 3 and 4 shown in this embodiment are not limited to these. For example, the size can be applied to a general size of a few hundred μm to a millimeter order. Also, element 3,
As a material of No. 4, a sintered body of a Bi-Te-based material has been described as an example, but various thermoelectric materials such as a Fe-Si-based material, a Si-Ge-based material, and a Co-Sb-based material are also applicable. is there.

As for the method of forming the elements 3 and 4 shown in the method of manufacturing the thermoelectric element 1, the individual elements 3 and 4 are formed and then each substrate is formed as in the conventional method. You may make it adhere to 2A, 2B.

[0039]

According to the present invention, the P-type element and the N-type element are formed in such a shape that the area of the cross section parallel to the bottom surface and the top surface continuously decreases from the bottom surface to the top surface. As compared with the columnar (rectangular parallelepiped) element having the same characteristics, the area of the bottom surface of each of the P-type and N-type elements and the area of the fixing surface to the first substrate are enlarged, , P-type and N-type elements and the first substrate are improved in bonding strength.

In addition, since the P-type and N-type elements have the above-described shapes, the mechanical strength of the P-type and N-type elements themselves against shear stress and the like can be improved, and the yield can be improved. According to the present invention, P
Since the cross-sectional shapes of the mold element and the N-type element are square, the molding of the P-type and N-type elements is facilitated.

In addition, the steps for forming the P-type and N-type elements can be minimized. According to the present invention, since the P-type element and the N-type element are plate-shaped, including the insulating layer formed in the gap, compared to when the P-type element and the N-type element are independent pillars,
The mechanical strength of the P-type and N-type elements themselves against shear stress and the like is improved, and the yield can be improved.

According to the present invention, each of the P-type element and the N-type element has a bottom surface having a predetermined shape and an upper surface parallel to the bottom surface, and the area of the cross section parallel to the bottom surface and the upper surface is the same as that of the first embodiment. The P-type element and the N-type element are formed into a shape that continuously decreases from the bottom surface toward the top surface, and the P-type element and the N-type element are bonded together with an insulating adhesive, and then the bottom surface is fixed to the metal electrode of the first substrate. After cutting and removing as necessary, the second substrate is fixed to the upper surface, so that the P-type and N-type elements are firmly fixed to the first substrate together with the insulating adhesive. , P-type and N-type elements are separated from the substrate and fall down.

According to the present invention, the P-type thermoelectric material and N
The thermoelectric material is formed in a plate shape having fins, the P-type thermoelectric material and the N-type thermoelectric material are bonded together with an insulating adhesive, and unnecessary portions are removed by cutting and polishing. Is fixed to the metal electrode of the first substrate, cut and removed as necessary, and then the second substrate is fixed to the upper surface thereof. It becomes a state firmly fixed to one substrate,
It is reduced that the P-type and N-type elements separate from the substrate or fall down. Further, a fine element can be formed.

According to the present invention, the fins of the P-type thermoelectric material and the N-type thermoelectric material formed into a plate shape having fins each have a predetermined bottom surface and a top surface parallel to the bottom surface. The bottom surface and the area of the cross section parallel to the upper surface, one is formed in a shape that continuously decreases from the bottom surface toward the upper surface, and the other continuously increases from the bottom surface toward the upper surface. After forming the P-type thermoelectric material and the N-type thermoelectric material together with an insulating adhesive, unnecessary portions are removed by cutting and polishing, and the P-type thermoelectric material and the N-type thermoelectric material are cut. In order to fix the surface having a larger area to the metal electrode of the first substrate, cut and delete as necessary, and then fix the second substrate thereon,
The P-type and N-type elements are firmly fixed to the first substrate together with the insulating adhesive, so that the P-type and N-type elements are less likely to separate or fall from the substrate. Further, a fine element can be formed.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an overview of a thermoelectric element according to the present invention.

FIG. 2 is a longitudinal sectional view of the thermoelectric element of FIG.

FIG. 3 is a diagram showing an outline of a manufacturing process of the present invention.

FIG. 4 is a diagram showing an outline of a manufacturing process of the present invention.

FIG. 5 is a diagram showing an outline of a manufacturing process of the present invention.

[Explanation of symbols]

 Reference Signs List 1 thermoelectric element 2A substrate (second substrate) 2B substrate (first substrate) 3 P-type element 4 N-type element 5 metal electrode 6 metal layer 7 bonding layer 8 P-type thermoelectric material wafer 9 N-type thermoelectric material wafer 10 insulation Adhesive 11 PN thermoelectric material wafer

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-299704 (JP, A) JP-A 1-235387 (JP, A) JP-A-8-18109 (JP, A) JP-A-63-1988 110779 (JP, A) JP-A-8-97472 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 35/32 H01L 35/34

Claims (1)

(57) [Claims] 1. A P-type element made of a P-type thermoelectric material, an N-type element made of an N-type thermoelectric material, and a metal capable of forming a PN junction pair by joining these P-type and N-type dissimilar elements one by one. A method for manufacturing a thermoelectric element, comprising: a first substrate having an electrode; and a second substrate having the metal electrode, the second substrate having the first substrate and the P-type and N-type elements sandwiched therebetween. In the above, the P-type thermoelectric material and the N-type thermoelectric material are formed in a plate shape having fins, and each of the fins has a bottom surface having a predetermined shape and an upper surface parallel to the bottom surface. The area of a cross section parallel to the one is formed in a shape that continuously decreases from the bottom surface toward the top surface, the other is formed in a shape that continuously increases from the bottom surface toward the top surface,
After the P-type thermoelectric material and the N-type thermoelectric material are bonded together with an insulating adhesive, unnecessary portions are removed by cutting and polishing, and the bottom surface is fixed to the metal electrode of the first substrate, and the upper surface thereof is fixed. By fixing the second substrate to P
A method for manufacturing a thermoelectric element, wherein an N-junction pair is formed.