JP2992539B2 - Processing equipment for high dissociation pressure compounds - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for a compound having a high dissociation pressure such as GsAs used as a laser device or an IC substrate, and more particularly, to a vapor pressure of a gas having a high dissociation pressure in a closed vessel for processing. It relates to an improvement for ensuring control.

[0002]

2. Description of the Related Art FIG. 6 shows a single crystal pulling apparatus proposed in Japanese Patent No. 1490669 as an example of this type of processing apparatus. This apparatus is for manufacturing a single crystal of a high dissociation pressure compound semiconductor such as GaAs by the Czochralski method (CZ method).

In FIG. 6, reference numeral 1 denotes a sealed container for internally pulling a single crystal, and the sealed container 1 is configured to be divided into a container upper part 2 and a container lower part 3, and a joint 4 Is provided with a sealing material 5. Container lower part 3
A stress buffering mechanism 7 is attached to the push-up lower shaft 6 to keep the stress applied to the joint 4 at an appropriate value.

[0005] A crucible 9 supported by a susceptor 8 is disposed inside the closed container 1. The crucible 9 is rotated by a lower shaft 10 and heated by the heaters 11 a and 11 b together with the closed container 1. Has become.

[0005] A vapor pressure control unit 12 is provided on the top plate of the container upper part 2.
By controlling the temperature of the inner wall surface of the vapor pressure control unit 12 to the lowest and appropriate constant temperature on the container wall, the amount of the high dissociation pressure component condensed here is adjusted, and the inside of the closed container 1 is adjusted. The composition of the raw material melt 13 in the crucible 9 is controlled by controlling the high dissociation pressure component gas pressure.

A view lot 14 is provided for penetrating the top plate of the sealed container 1 and observing the growth portion of the single crystal 18.
Rotary seals 16 each filled with a liquid sealant such as B ₂ O ₃ are provided. The entire configuration described above is housed in the external container 17.

Next, a method of manufacturing a GaAs single crystal using the above apparatus will be described. In this case, the high dissociation pressure component is As
And the other raw material component is Ga. First, the crucible 9 is filled with Ga, and As is placed on the bottom plate 1a of the closed vessel 1. Then, after evacuating the entire device, the lower shaft 6 is lifted up to seal the sealed container 1.

Next, after the inner wall of the closed container 1 except for the bottom plate 1a is heated by the heater 11a, the bottom plate 1a of the closed container 1 is heated by the heater 11b, and As placed on the bottom plate 1a is heated. In addition, the Ga raw material in the crucible 9 is heated together with the closed container 1 so that As is absorbed by the Ga raw material, and the GaAs raw material is synthesized in the crucible 9.

At this time, the temperature distribution in the closed vessel 1 is controlled so that the bottom plate 1a and the vapor pressure control section 12 are lower than the other parts, and the sublimated As is transferred to the other parts in the closed vessel 1. Prevent condensation. At the same time, during the synthesis operation, the outer container 1
An inert gas is introduced into the inside 7 to balance the pressure inside and outside the closed vessel 1.

When the synthesis of the GaAs raw material is completed, a seed crystal (not shown) at the lower end of the pulling shaft 15 is immersed in a GaAs melt, and the temperature of the heaters 11a and 11b is raised while the pulling shaft 15 is rotated. Is gradually lowered to grow a single crystal 18 as shown.

The amount of As to be placed on the bottom plate portion 1a of the closed vessel 1 is set to be equal to or more than that required for the synthesis of the GaAs raw material. As gas. Further, the vapor pressure control unit 12 has a volume and a structure that can store the As solid until the crystal growth is completed, in consideration of the amount of As lost during the crystal growth.

[0012]

However, in the above apparatus, when synthesizing a GaAs raw material, As
The sublimation rate tends to be difficult to control, and the rate of absorption of As gas due to the reaction with Ga becomes larger than the rate of As gas absorption. If such a pressure rise occurs rapidly and the pressure adjustment operation using an inert gas from the outside cannot be performed in time, the airtightness of the sealed container 1 may be broken and a large amount of As may be scattered.

As a result of the present inventors studying this problem in detail, in the above-described apparatus, the crucible 9 in the closed container 1 is thermally shielded from the bottom plate portion 1a of the closed container 1 where the As material is placed. It was found that the cause was that the temperature of the As raw material rose with the rise in the temperature of the crucible 9.

Therefore, the present inventors have devised a configuration in which a cylindrical vapor pressure control container is provided around the lower shaft below the closed container and the inner volume thereof is sufficiently larger than that of the conventional vapor pressure control unit. did. According to this configuration, by keeping the inner wall surface of the vapor pressure control vessel at a low temperature during GaAs synthesis, the As raw material disposed in the closed vessel is once condensed inside the vapor pressure control vessel, and the As raw material is crucible. It is possible to synthesize GaAs by releasing As gas again from this, and to absorb excess pressure of As in a large-capacity vapor pressure control vessel, and to increase the pressure in the closed vessel. Can also be prevented.

By the way, when the GaAs synthesis is completed, most of the As material becomes GaAs in the crucible, and only a small amount of As remains in the vapor pressure control vessel. In order to perform pressure control, it is desirable that the inner wall surface of the vapor pressure control container has a uniform temperature over the entire surface. However, such control is difficult in practice, and instead, a temperature uniform portion having a relatively large area is formed on a part of the inner wall surface of the vapor pressure control vessel, and the other part of the inner wall surface is formed with the same temperature. It is necessary to control the temperature so that the temperature does not become lower than the temperature uniform portion.

From this point of view, when the above-mentioned annular vapor pressure control container is provided, the temperature of the top plate, the bottom plate, and the inner wall portion through which the lower shaft of the vapor pressure control container is inserted,
Care must be taken to ensure that the temperature is always slightly higher than the temperature of the outer wall of the vapor pressure control vessel. If the temperature of these points is higher than the temperature of the outer wall by a certain degree or more, a temperature gradient occurs inside the vapor pressure control vessel, and the high dissociation pressure component condensed on the inner surface of the outer wall is affected by heat, and accurate vapor pressure control is performed. Is no longer possible. Conversely, when the temperature of any of the top plate, the bottom plate, and the inner wall is lower than the outer wall of the vapor pressure control container, the arsenic vapor pressure in the closed container may increase the temperature of these places where accurate temperature control is difficult. And precise vapor pressure control cannot be performed.

Further, as the volume of the vapor pressure control vessel increases, the area of the end face increases, so that there is a problem in that the vapor pressure control vessel is easily affected by heat from a high temperature region in the upper part of the apparatus. further,
When the vapor pressure control vessel is arranged on the outer periphery of the lower shaft, the lower shaft provides a heat conduction path from the high temperature region in the upper part of the apparatus to the vapor pressure control vessel and from the vapor pressure control vessel to the low temperature area in the lower part of the apparatus. , Its thermal effects must be considered.

Furthermore, since the temperature distribution around the crucible gradually changes as the single crystal grows, the effect is transmitted to the vapor pressure control vessel by radiation or conduction of the lower shaft, etc.
It is inevitable that the temperature distribution of the vapor pressure control vessel changes with time.

As described above, when the vapor pressure control vessel is connected to the closed vessel, special consideration is required to keep the temperature distribution of the vapor pressure control vessel constant during single crystal growth. As the size increases, the structure and operation method become complicated, and it is difficult to realize sufficient reliability. The above problem is not limited to the high-dissociation-pressure compound single crystal manufacturing apparatus shown in FIG. 6 but may be similarly applied to other high-dissociation-pressure compound processing apparatuses such as a high-dissociation-pressure compound synthesis apparatus. That is.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has a structure in which a relatively large-capacity vapor pressure control container is connected to a closed container, in which the temperature distribution in the vapor pressure control container is made uniform and the temperature control is performed. It is an object of the present invention to provide an apparatus for treating a compound having a high dissociation pressure, which can improve the accuracy and reliability of the compound.

[0021]

According to the present invention, there is provided an apparatus for treating a compound having a high dissociation pressure, which is disposed below the closed vessel and has a concentric cylindrical inner wall and an outer wall as a vapor pressure controller. A pressure control container that defines an air-tight internal space, communication means for connecting the vapor pressure control container and the bottom plate of the closed container to allow the internal spaces of the containers to communicate with each other, A heat pipe arranged along at least one of the inner peripheral surface of the inner wall portion and the outer peripheral surface of the outer wall portion in the axial direction of the vapor pressure control container; and a heat pipe disposed inside and outside the inner wall portion of the vapor pressure control container. And a control section heating means arranged on the outside.

[0022] The vapor pressure control container may be arranged above the closed container. Further, in addition to the above configuration, a lower shaft that is provided in an airtight and rotatable manner through the bottom plate portion of the closed container, a crucible provided at an upper end of the lower shaft and disposed in the closed container, An upper shaft for airtightly and rotatably penetrating the top plate of the closed vessel and pulling up the high dissociation pressure compound single crystal from the raw material melt in the crucible may be further provided.

[0023]

In the apparatus for treating a compound having a high dissociation pressure according to the present invention, the control unit heating means is provided inside the inner wall portion and outside the outer wall portion of the vapor pressure control vessel, respectively. In addition, since the heat pipe is disposed along at least one of the inner wall portion and the outer wall portion, the temperature distribution on the inner surface of the corresponding wall portion can be made uniform.

Further, since the vapor pressure control container is cylindrical, if the diameters of the inner wall and the outer wall are set large, the radial thickness of the vapor pressure control container can be increased while ensuring a sufficiently large internal volume. Can be kept relatively small,
The smaller the thickness in the radial direction, the more uniform the temperature distribution in the radial direction of the internal space of the vapor pressure control container. Therefore, the accuracy of temperature control of the inner wall portion and the outer wall portion can be improved, and accurate and reliable vapor pressure control of the high dissociation pressure component gas can be performed.

Further, even when the vapor pressure control container is arranged below the closed container, the control unit heating means is provided between the lower shaft and the inner wall of the vapor pressure control container, so that the temperature of the lower shaft is reduced. Even when the temperature fluctuates, the temperature of the inner wall portion can be corrected by the control unit heating means, and the influence of heat from the lower shaft can be minimized.

Furthermore, according to the apparatus of the third aspect, a high-precision control of the vapor pressure of the high dissociation pressure component gas at the time of raw material synthesis and at the time of pulling up can produce a good single crystal.

[0027]

Next, embodiments of the present invention will be described in detail. FIG. 1 shows a first apparatus for treating a compound having a high dissociation pressure according to the present invention.
FIG. 2 is a cross-sectional view showing an apparatus for producing a high dissociation pressure compound single crystal as an example.

In the figure, reference numeral 20 denotes a hermetically sealed container whose inside can be hermetically sealed, and is composed of a container upper portion 22 and a container lower portion 24, and a seal member 26 is interposed at a joint portion between them. A pull-up shaft 28 is provided through the center of the top plate portion 22A of the container upper part 22, and an annular wall portion 30 is provided on the upper surface of the top plate portion 22A so as to surround the pull-up shaft 28, and liquid is contained therein. Seal 32 is filled. A view rod 34 is provided to penetrate the top plate 22A.

An upper heater 3 is provided on the outer periphery of the container upper portion 22.
6 are arranged, and a middle heater 38 and a lower heater 40 are arranged on the outer periphery of the container lower portion 24, and can be energized independently of each other.

The lower end of the container lower portion 24 is closed by a bottom plate portion 42, and a cylindrical container support 44 is coaxially fixed to the lower surface of the bottom plate portion 42, and the lower end thereof is connected via a stress buffering mechanism 46. It is fixed to the push-up lower shaft 48. A lower shaft 50 is disposed along the axis inside the push-up lower shaft 48, and the upper portion of the lower shaft 50 penetrates through the bottom plate portion 42 to form the closed container 2.
Inserted in 0. Further, a crucible 54 is coaxially fixed to the upper end of the lower shaft 50 via a susceptor 52.

A cylindrical seal support portion 56 is formed on the lower surface of the bottom plate portion where the lower shaft penetrates, and the inside thereof is filled with a liquid seal 58 between itself and the lower shaft 50. Also,
Three through-holes 60 are formed on the upper surface of the bottom plate portion 42 at the same distance from the lower shaft 50 and at a distance of 120 ° from each other around the lower shaft, and the lower surface of the bottom plate portion 42 corresponds to each through-hole 60. A communication pipe (communication means) 62 is fixed to each.

At the lower end of the communication pipe 62, a cylindrical vapor pressure control container 72 is fixed coaxially with the lower shaft 50. The vapor pressure control container 72 has upper and lower ends of a cylindrical outer wall 66 and an inner wall 68 closed by an annular top plate 64 and a bottom plate 70, respectively. , And the internal space of the vapor pressure control container 72 is connected to the internal space of the closed container 20 via the communication pipe 62.

As shown in FIG. 2, a cylindrical heat pipe 74 is coaxially disposed inside (lower shaft side) of the inner wall portion 68 of the vapor pressure control container 72, and further has a cylindrical heater (inside). (Control section heating means) 78 is coaxially arranged. A cylindrical heat pipe 76 is coaxially arranged outside the outer wall 66, and a cylindrical heater (control unit heating means) 80 is coaxially arranged around the outside.
The vapor pressure control container 72 and the heat pipes 74 and 76 are in surface contact with each other or have a slight gap.

Heat pipes 74 and 76 and heater 7
8, 80 have substantially the same axial length and are longer than the vapor pressure control container 72, and the lower end is fixed to the bottom plate portion 44A of the container support base 44. Further, these upper ends are set at positions higher than the upper end of the vapor pressure control container 72 by a certain length, and the lower ends are set at positions lower than the lower end of the vapor pressure control container 72 by a certain length, so that the heating amount of the vapor pressure control container 72 is uniform. Has been

On the other hand, in the closed container 20, the bottom plate 4
A raw material container 82 is placed on the top 2. The raw material container 82 has an annular shape, the outer diameter is set slightly smaller than the inner diameter of the closed container 20, and the inner diameter is set to be considerably larger than the lower shaft 50. At the bottom of the raw material container 82, the bottom plate portion 82 is raised toward the center.
A is formed so that the through hole 60 of the bottom plate portion 42 is not closed.

Further, all the components described above are housed in an airtight outer container 84, and the outer container 84 and the closed container 20 are connected to a vacuum pump and an inert gas supply (not shown), respectively.

Next, a method of using the single crystal manufacturing apparatus having the above configuration will be described. First, as shown in FIG.
After Ga is placed in 4 and As is placed in the raw material container 82, while the entire apparatus is evacuated, the lower shaft 48 is raised to press the sealing material 26.

Next, the heaters 78 and 80 are energized to heat the vapor pressure control container 72 and the heaters 36 and 3 are heated.
8 and 40 are energized to heat the closed container 20 and sublimate As in the raw material container 82. In addition, crucible 54
The temperature of the Ga inside is raised to absorb As vapor, and the crucible 54 is heated.
GaAs is synthesized therein, and excess As is condensed in the vapor pressure control container 72 as shown in FIG. During this time, an inert gas is introduced into the outer container 84 and the closed container 20 is introduced.
Balance the pressure inside and outside.

When the temperature of the GaAs melt in the crucible 54 has risen sufficiently, the temperature of the vapor pressure control container 72 is increased, and the synthesis operation is continued while discharging As from the vapor pressure control container 72.

When the GaAs synthesis is completed, the heater 38
While gradually lowering the output of the pulling shaft 2 as shown in FIG.
8, the GaAs seed crystal A fixed at the lower end is immersed in the GaAs melt, and the GaAs single crystal is pulled up while rotating. The process is the same as the conventional method.

According to the single crystal manufacturing apparatus having the above-described structure, the heat pipes 74 and 76 and the heaters 78 and 80 are provided inside the inner wall 68 and outside the outer wall 66 of the vapor pressure control vessel 20, respectively. Therefore, the temperature can be controlled from both inside and outside of the vapor pressure control container, and the temperature distribution of the inner wall 68 and the outer wall 66 can be made uniform by the heat pipes 74 and 76.

In particular, in this embodiment, the vapor pressure control vessel 7
2 is disposed below the closed container 20, but a heat pipe 74 and a heater 7 are provided between the lower shaft 50 and the inner wall 68.
Because of the provision of 8, even when the temperature of the lower shaft 50 fluctuates, the temperature of the inner wall portion 68 can be easily corrected, and the thermal influence from the lower shaft 50 can be minimized.

Further, since the vapor pressure control container 72 is cylindrical, if the diameters of the inner wall portion 68 and the outer wall portion 66 are set large, the thickness in the radial direction can be relatively increased while securing a sufficiently large internal volume. Since the thickness can be kept small and the radial thickness is small, the radial temperature distribution of the internal space S of the vapor pressure control container 72 can be made uniform.

Therefore, the inner wall portion 68 and the outer wall portion 66
The temperature of each gas is made uniform over the entire surface, and the accuracy of their temperature control is improved, and accurate and reliable vapor pressure control of high dissociation pressure component gas is possible. The control of the vapor pressure of the high dissociation pressure component gas at the time of precision is improved to prevent the possibility of leakage of As gas, and a high-quality GaAs single crystal can be manufactured with high reliability. Further, since the control of the temperature and the vapor pressure of As is facilitated, the lifting operation can be simplified.

In the above embodiment, the vapor pressure control vessel 7
2 is arranged below the closed vessel 20, but the present invention is not limited to this. For example, the vapor pressure control vessel 72 can be arranged above the closed vessel 20 as shown in FIG. It is. Reference numerals in the figure are common to those in the embodiment of FIG.

The present invention is not limited to an apparatus for producing a single crystal of a high dissociation pressure compound single crystal, but includes, for example, a vertical Bridgman growth apparatus, an apparatus for synthesizing a high dissociation pressure compound, and an annealing apparatus for a high dissociation pressure compound single crystal. The present invention can be applied to other high-dissociation pressure compound processing apparatuses.
The number of 2, etc., may be changed as needed. further,
The high dissociation pressure compound targeted by the present invention is not limited to GaAs.

[0047]

EXPERIMENTAL EXAMPLES Next, the effects of the present invention will be described with reference to experimental examples. The single crystal manufacturing apparatus shown in FIG. 1 was prepared. Closed container 2
As 0, what was molded with niobium integrally with the bottom plate portion 42 was used. The thickness in the radial direction of the vapor pressure control container 72 was 1.5 cm, and its internal volume was about 1100 cm ³ . If As is densely added to this, it is possible to fill up to 5.8 kg. As the sealing material 26, a carbon gasket was used.

When the temperature distribution of the vapor pressure control vessel 72 during heating was measured by this apparatus, at a set temperature of 600 to 650 ° C., the vapor pressure control vessel 72 was kept within 0.5 ° C. over its entire length and outside. It was confirmed that the film had temperature uniformity.

After 5 kg of Ga was placed in the crucible 54 and 5.6 kg of As was placed in the raw material container 82, the entire apparatus was evacuated, and the lower shaft 48 was pushed up to press the sealing material 26. Next, the steam pressure control container 72 is connected to the heaters 78 and 80.
To 570 ° C. and heaters 36 and 38
The temperature of the upper portion of the closed container 20 was raised to about 700 to 1000 ° C. to heat As in the raw material container 82. At the same time, when Ga in the crucible 54 was gradually heated, a synthesis reaction of GaAs occurred as the Ga temperature increased.

During this time, an inert gas was introduced into the external container 84 to balance the pressure inside and outside the closed container 72. When the temperature of the melt in the crucible rises sufficiently to about 1250 ° C., the temperature of the vapor pressure control vessel 72 is gradually raised to 630 ° C.
When set to ° C., As in the vapor pressure control container 72 was released, and it was confirmed that the GaAs synthesis reaction continued. When the reaction had subsided, the temperature of the vapor pressure control vessel 72 was set at 615 ° C. and left for about 5 hours.

Thereafter, the temperature of the vapor pressure control vessel 72 is reduced to 61
With the temperature set at 5 ° C., the output of the heater 38 was gradually lowered, and the pulling shaft 28 was lowered to immerse the seed crystal A in the GaAs melt.
A single crystal having a length of 0 mm and a length of 160 mm was grown. The As loss during the entire process of the crystal growth was 50 g, and the synthesis was performed with high control accuracy without greatly disturbing the pressure balance between the inside and outside of the closed vessel during the synthesis of the raw materials.

When the characteristics of the obtained single crystal were measured,
At the seed end and the tail, the values of resistivity and mobility by hole measurement were 1-2E7Ωcm and 6
The value was about 500 to 7000 cm ² / V · S. This characteristic indicates that composition control during synthesis and growth was performed correctly.

[0053]

As described above, according to the apparatus for treating a compound having a high dissociation pressure according to the present invention, the control unit heating means is provided inside the inner wall portion and outside the outer wall portion of the vapor pressure control vessel, respectively. In addition to being able to control the temperature from both the inner and outer surfaces of the vapor pressure control container, since the heat pipe is arranged along at least one of the inner wall and the outer wall, the temperature distribution on the inner surface of the corresponding wall can be made uniform. .

Further, since the vapor pressure control container is cylindrical, if the diameters of the inner wall and the outer wall are set large, the radial thickness of the vapor pressure control container can be increased while securing a sufficiently large internal volume. Can be kept relatively small,
The smaller the thickness in the radial direction, the more uniform the temperature distribution in the radial direction of the internal space of the vapor pressure control container. Therefore, the temperatures of the inner wall portion and the outer wall portion are made uniform, and the accuracy of the temperature control is improved, so that accurate and reliable vapor pressure control of the high dissociation pressure component gas becomes possible.

When the vapor pressure control container is disposed below the closed container, the control unit heating means is provided between the lower shaft and the inner wall portion of the vapor pressure control container. Even when the temperature fluctuates, the temperature of the inner wall portion can be corrected by the control unit heating means, and the influence of heat from the lower shaft can be minimized.

Further, when the present invention is embodied as a single crystal manufacturing apparatus, by controlling the vapor pressure of the high dissociation pressure component gas at the time of raw material synthesis and pulling up with high precision, high reliability and high quality can be achieved. Can be produced.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a single crystal manufacturing apparatus as an embodiment of a processing apparatus for a high dissociation pressure compound according to the present invention.

FIG. 2 is a sectional view taken along line II-II of the apparatus.

FIG. 3 is a longitudinal sectional view showing a method of using the same device.

FIG. 4 is a longitudinal sectional view showing a method of using the same device.

FIG. 5 is a longitudinal sectional view of a main part showing a single crystal manufacturing apparatus according to another embodiment of the present invention.

FIG. 6 is a longitudinal sectional view showing an example of a conventional apparatus for treating a high dissociation pressure compound.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 20 Closed container 22 Container upper part 24 Container lower part 22A Top plate part 26 Sealing material 36, 38, 40 Heater (container heating means) 42 Bottom plate part of closed container 44 Container support base 46 Stress buffering mechanism 48 Push-up lower shaft 50 Lower shaft 54 Crucible Reference Signs List 60 communication hole 62 communication pipe (communication means) 66 outer wall of vapor pressure control vessel 68 inner wall of vapor pressure control vessel 72 vapor pressure control vessel 74, 76 heat pipe 78, 80 heater (control section heating means) 82 raw material vessel 84 Outer container

Continued on the front page (72) Inventor Takashi Atami 1-297 Kitabukuro-cho, Omiya-shi, Saitama Prefecture Mitsui Materials Corporation Compound Semiconductor Center (72) Inventor Keiji Shirata 1-297 Kitabukuro-cho, Omiya-shi, Saitama Material Co., Ltd. Compound Semiconductor Center (56) References JP-A-3-285886 (JP, A) JP-A-61-201691 (JP, A) JP-A-62-176982 (JP, A) JP-A-50 -46578 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) C30B 1/00-35/00

Claims (3)

(57) [Claims] 1. An openable and closable container having a cylindrical shape having a top plate portion and a bottom plate portion, the internal space of which is hermetically sealed, container heating means for heating the closed container, and an internal space. A vapor pressure control unit communicating with the internal space of the closed vessel, and condensing a part of the high dissociation pressure component in the vapor pressure control unit, whereby the high dissociation pressure filled in the internal space of the closed vessel is provided. In a processing apparatus for a high dissociation pressure compound that controls the pressure of a component gas, the vapor pressure control unit is disposed below the closed container,
A vapor pressure control container defining an airtight internal space between a concentric cylindrical inner wall portion and an outer wall portion, and connecting the vapor pressure control container and the bottom plate portion of the closed container to each other, A communicating means for communicating the internal space with each other, and a heat pipe arranged along at least one of the inner peripheral surface of the inner wall portion and the outer peripheral surface of the outer wall portion of the vapor pressure control container in the axial direction of the vapor pressure control container. And a control unit heating means disposed inside the inner wall portion and outside the outer wall portion of the vapor pressure control vessel, respectively. 2. An openable and closable container having a cylindrical shape having a top plate portion and a bottom plate portion, the internal space of which is hermetically sealed, a container heating means for heating the closed container, and an internal space. A vapor pressure control unit communicating with the internal space of the closed vessel, and condensing a part of the high dissociation pressure component in the vapor pressure control unit, whereby the high dissociation pressure filled in the internal space of the closed vessel is provided. In a processing apparatus for a high dissociation pressure compound that controls the pressure of a component gas, the vapor pressure control unit is disposed above the closed container,
A vapor pressure control container defining an airtight internal space between a concentric cylindrical inner wall portion and an outer wall portion, and connecting the vapor pressure control container and a top plate of the closed container to each other. Communicating means for communicating the internal spaces of the steam pressure control container with each other, and heat disposed along the axial direction of the steam pressure control container along at least one of the inner peripheral surface of the inner wall portion and the outer peripheral surface of the outer wall portion of the vapor pressure control container. An apparatus for treating a compound having a high dissociation pressure, comprising: a pipe; and control unit heating means disposed inside the inner wall portion and outside the outer wall portion of the vapor pressure control container. 3. A lower shaft, which is provided in an airtight and rotatable manner through a bottom plate portion of the closed container, a crucible provided at an upper end of the lower shaft and disposed in the closed container, and the closed container. 3. An upper shaft for airtightly and rotatably penetrating the top plate portion of the above, and for pulling up a high dissociation pressure compound single crystal from the raw material melt in the crucible, further comprising an upper shaft. High-dissociation pressure compound processing equipment.