JP2996169B2 - High frequency semiconductor device and high frequency communication equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency semiconductor device for communication and a high-frequency communication device using the same.

[0002]

2. Description of the Related Art High-frequency semiconductor devices include, for example, transmission amplifiers, reception amplifiers, mixers, switches, oscillators, and attenuators. These devices require high performance in a high-frequency range, low noise, and power conversion. And high efficiency.

In order to satisfy these requirements, a compound semiconductor having high mobility and good high-frequency characteristics as compared with silicon (Si), particularly a semiconductor device made of gallium arsenide (GaAs) is often used. However, GaAs has a disadvantage that the price per unit area is higher than that of Si.
BACKGROUND ART In recent years, high-frequency communication devices have become remarkably popularized by mobile phones, as represented by mobile phones. Along with that, higher performance (higher gain,
Higher output, higher efficiency, lower noise, and smaller size) and higher functionality (multifunctional integration) are also required, as well as lower cost. In other words, how to achieve the contradictory properties of high performance, high functionality and low cost, more specifically, at present, Si and GaAs
How to properly use s and s is the key to realizing a high-frequency communication device.

[0004] Here, the high-frequency section of the current portable telephone (FIG. 1)
4) will be described as an example. FIG. 14 shows nine blocks (oscillator 50, switch 23, two local oscillator amplifiers 46,
Two mixers 48, a receiving amplifier 49, a transmitting amplifier 22,
Antenna switch 23). Generally, Si is used for each semiconductor of the oscillator 50, the local oscillator amplifier (local amplifier) 46, and the mixer 48, and the transmission amplifier 22,
GaAs is used for each semiconductor of the receiving amplifier 49 and the antenna switch 23. Oscillator, local amplifier, and mixer have high-frequency characteristics equivalent to that of GaAs, but can be realized by Si. Therefore, inexpensive Si is used. Since GaAs cannot be obtained, GaAs is used. These nine blocks are realized on a printed circuit board to complete the high-frequency part. In practice, each block is contained in its own package.
Since a chip capacitor, a chip inductor, and a chip resistor are required for high-frequency matching between the blocks, the high-frequency portion requires a large area on a printed circuit board, and the size of the telephone becomes large. For this reason, as one method of miniaturization, it is necessary to improve the function of the semiconductor, that is, to reduce the size by integrating the semiconductor.

For example, a mixer 48 and a local amplifier 46 are integrated on one chip (see O. Ishikawa et al. "Advanced Tech.
nologies of Low-power GaAs ICs and Power Modules f
orCellular Telephones ", IEEE GaAsIC Sympo.Tech.Dig
est, 131, 1992), transmission amplifier 22 and antenna switch 2
In the case of miniaturizing the high frequency part by integrating 3 on one chip
(K. Fujimoto et al. "A High Performance GaAs MMIC T
ransceiver for Personal Handy Phone System (PHS) ",
Proc. Of the 25th European Microwave Conf., 926,19
95) have been reported.

In order to further reduce the size, it is necessary to integrate a semiconductor device made of Si and a semiconductor device made of GaAs on one chip.

On the other hand, as shown in Table 1, a high-frequency semiconductor device using GaAs has a lower thermal conductivity than Si, so that a semiconductor device that consumes a large current, such as a transmission amplifier, has good heat dissipation. There is a restriction that must be adopted. Further, as seen in the enforcement of the PL law, recently, the safety of products has become more important than ever. When commercializing a high-frequency semiconductor device, it is necessary to minimize hazardous substances in used parts from the viewpoint of safety. Since GaAs includes arsenic (As), which is a harmful substance, it is inferior in terms of safety, even though it has excellent high-frequency characteristics as compared with Si. This is why high-frequency semiconductor devices and high-frequency communication devices that do not contain harmful substances are desired.

[0008]

In order to further improve the performance, function and size of a high-frequency semiconductor device in the future,
As described above, integration of heterogeneous semiconductors, for example, Si and G
Integration of aAs has become necessary. However, at present, the realistic technology for heterogeneous semiconductor integration is Si /
Only the integration technology of GaAs, this Si / GaAs
Regarding the integration technology, reports are merely a basic study, such as reports on GaAs substrates epitaxially grown on Si and GaAs devices on GaAs on Si (T. Ishida et al.
al. "GaAsMESFET Ring Oscillator on Si Substrate",
IEEE Trans. Electron. Dev., ED-32 [6], 1037, 1985), and no specific example of integrating both devices on one chip has yet been reported.

This is because GaAs grown on a Si substrate still has a high defect density and insufficient high frequency characteristics. In the prior art, it is difficult to integrate heterogeneous semiconductors, and as a result, it is not possible to sufficiently realize high-frequency semiconductor devices with high performance, as well as miniaturization and cost reduction.

In addition, if GaAs is used to ensure high-frequency characteristics, for example, a semiconductor device that consumes a large amount of current, such as a transmission amplifier, must adopt a mounting method with good heat dissipation because thermal conductivity is poor. There are disadvantages that the package becomes large and the mounting cost becomes expensive. In addition, GaAs contains harmful substance As,
When commercializing a high-frequency semiconductor device / high-frequency communication device, there was a problem in terms of safety.

An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a method for realizing high-performance and high-frequency semiconductor devices and high-frequency communication devices by using a safe substance.

[0012]

In order to solve the above-mentioned problems, in the high-frequency semiconductor device according to the first aspect of the present invention, SiC as a second semiconductor is formed in a predetermined region on Si as a first semiconductor. Further, a GaN, which is a third semiconductor, is selectively grown in a predetermined region on the SiC to realize a high-frequency semiconductor device on the GaN, on the SiC, or on the Si, thereby forming a Si / SiC / GaN hybrid integrated circuit. .

[0013] In the high-frequency communication device according to the second aspect of the present invention, the second semiconductor SiC is formed in a predetermined region on the first semiconductor Si, and the third semiconductor is formed in a predetermined region on the SiC. Is selectively grown, and GaN
One of two of a transmission amplifier and a reception amplifier is realized as a high-frequency semiconductor device on Si or on SiC, and one of three of a mixer, a switch and an oscillator is realized on Si. , A high frequency communication device using a Si / SiC / GaN hybrid integrated circuit.

In the high-frequency communication device according to the third aspect of the present invention, the second semiconductor SiC is formed in a predetermined region on the first semiconductor Si, and the third semiconductor is formed in a predetermined region on the SiC. Is selectively grown, and GaN
Any two of a transmission amplifier, a reception amplifier, and an antenna switch are realized as a high-frequency semiconductor device on SiC or on SiC, and any one of three mixers, switches, and oscillators is realized on Si. And Si / SiC
/ GaN hybrid integrated circuit constitutes high-frequency communication equipment.

In the high-frequency communication device according to a fourth aspect of the present invention, the second semiconductor SiC is formed in a predetermined region on the first semiconductor Si, and the third semiconductor is formed in a predetermined region on the SiC. Is selectively grown, and GaN
A transmission amplifier, a reception amplifier, and an antenna switch are realized as high-frequency semiconductor devices on the
A high frequency communication device using a Si / SiC / GaN hybrid integrated circuit is realized by realizing one of the three components of the mixer, the switch, and the oscillator.

In the high-frequency communication device according to the fifth aspect of the present invention, SiC as a second semiconductor is formed in a predetermined region on the Si as the first semiconductor, and a third semiconductor is formed in a predetermined region on the SiC. Is selectively grown, and GaN
One of two transmission amplifiers and two reception amplifiers is realized as a high-frequency semiconductor device on SiC or SiC, and any two of a mixer, a switch, and an oscillator are realized on Si. , A high frequency communication device using a Si / SiC / GaN hybrid integrated circuit.

In the high-frequency communication device according to the sixth aspect of the present invention, the second semiconductor SiC is formed in a predetermined region on the first semiconductor Si, and the third semiconductor is formed in a predetermined region on the SiC. Is selectively grown, and GaN
One of a transmission amplifier and a reception amplifier is realized as a high-frequency semiconductor device on Si or on SiC, and a mixer, a switch, and an oscillator are realized on Si,
A high-frequency communication device using an i / SiC / GaN hybrid integrated circuit is configured.

In the high frequency communication device according to the present invention, SiC as a second semiconductor is formed in a predetermined region on Si as a first semiconductor, and a third semiconductor is formed in a predetermined region on SiC. Is selectively grown, and GaN
Realizes any two of three transmission amplifiers, reception amplifiers, and antenna switches as high-frequency semiconductor devices on SiC or SiC, and realizes two of three mixers, switches, and oscillators on Si And Si / SiC / GaN
A high frequency communication device using the hybrid integrated circuit is configured.

In the high-frequency communication device according to the eighth aspect of the present invention, the second semiconductor SiC is formed in a predetermined region on the first semiconductor Si, and the third semiconductor is formed in a predetermined region on the SiC. Is selectively grown, and GaN
Any two of a transmission amplifier, a reception amplifier, and an antenna switch are realized as high-frequency semiconductor devices on Si or SiC, and a mixer, a switch, and an oscillator are realized on Si, and Si / SiC / GaN is realized. A high frequency communication device using the hybrid integrated circuit is configured.

In the high-frequency communication device according to the ninth aspect of the present invention, the second semiconductor SiC is formed in a predetermined region on the first semiconductor Si, and the third semiconductor is formed in a predetermined region on the SiC. Is selectively grown, and GaN
A transmission amplifier, a reception amplifier, and an antenna switch are realized as high-frequency semiconductor devices on the
On the upper side, two out of three of a mixer, a switch, and an oscillator are realized to constitute a high-frequency communication device using a Si / SiC / GaN hybrid integrated circuit.

In the high-frequency communication device according to the tenth aspect of the present invention, the second semiconductor SiC is formed in a predetermined region on the first semiconductor Si, and the third semiconductor is formed in a predetermined region on the SiC. Is selectively grown, and Ga
A transmission amplifier, a reception amplifier, and an antenna switch are realized as a high-frequency semiconductor device on N or SiC.
A mixer, switch, and oscillator are realized on i, and Si / S
A high-frequency communication device using an iC / GaN hybrid integrated circuit is configured.

[0022]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a cross-sectional view for explaining a first embodiment of the present invention, and the manufacturing procedure is shown by the cross-sectional views of FIG. 1, FIG. 16 to FIG. Here, as a high-frequency semiconductor device, an amplifier having two stages of FETs of the circuit shown in FIG. 2 is mounted on GaN, and the SPDT switch of the circuit shown in FIG.
(Single Pole Double Through) is fabricated on SiC, and the local amplifier of the circuit shown in FIG. 4 is fabricated on Si.

As shown in FIG. 1A, an oxide film (SiO ₂ film) deposited by a p-CVD method on a high-resistance p-type Si substrate 1
The collector buried layer 2 is formed by the arsenic (As) diffusion method using the mask as a mask, and the oxide film is removed. Then, an n-type Si (epitaxial growth layer) 3 is formed on the collector buried layer 2.
To form

Thereafter, insulating 6H-S is applied to the entire surface by CVD.
5000 A of iC4 and 1000 n-type SiC5 on top
A grown and CF ₄ /
SiC is removed by RIE using CHF ₃ gas. Thus, the SiC region 6 is partially formed on the Si substrate.

Next, as shown in FIG. 1B, after depositing 3000 A of the SiO ₂ film 7 and 4000 A of the SiN film 8,
The SiO ₂ film 7 and the SiN film 8 are etched only in a predetermined region, and further, the etching is performed up to the middle of the n-type epitaxial layer 3.

Thereafter, as shown in FIG. 16C, in order to ensure isolation, boron (B) ions for channel prevention are implanted to form ap ⁺ layer 9, and after heat treatment, Selective oxidation (LOCOS10) is performed.

Next, after removing the SiN film 8, the resist 4
Using B as a mask, B is ion-implanted and heat-treated to form a p-type base layer 11. Arsenic (A)
s) Ion implantation is performed to form a collector contact layer 12, and further, as shown in FIG.
An opening is provided in a predetermined region of the G film 13 by RIE.

Next, polysilicon 14 doped with arsenic (As) is grown by CVD, leaving only a predetermined region with a resist as a mask, and performing heat treatment to form an emitter contact layer 1.
5 is formed. Further, a base contact layer 16 is formed by low-acceleration ion implantation of B using a resist as a mask, and a predetermined pattern is formed with the resist. Then, Ti / Pt / Au is formed.
Is deposited on the entire surface to form a base electrode 17, a collector electrode 18,
An emitter electrode 19 is formed, and an npn bipolar transistor 20 is completed.

Further, the resistance 2 is formed using the p-type base layer 11.
Prepare No. 1. The resistor 21 is a bipolar transistor 20
Since the emitter electrode 19 on the p-type base layer inside is eliminated and only the two base electrodes 17 are provided, it can be formed simultaneously with the bipolar transistor.

Next, after GaN is selectively grown on the n-type SiC 5, a two-stage amplifier 22 is formed on the SiC and GaN.
A method of manufacturing the SPDT switch 23 will be described below.

As shown in FIG. 17 (e), after removing the SiO ₂ / PSG film on the SiC using the resist 47 as a mask, oxygen (O) is ion-implanted only in a predetermined region, and the n-type S
A conductive region (active element region) 24 and a high-resistance region (passive element region) 25 are formed on iC5.

Next, as shown in FIG. 17 (f), after depositing an SiO ₂ film 26 as an insulating film on the entire surface of 2000A, an opening is formed only in a predetermined region using a resist, and metalorganic vapor phase epitaxy is formed in the opening. As shown in FIG. 3, an insulating type GaN 27 is grown 5000 A and then an n-type GaN 28 is selectively (partially) grown as shown in FIG.

Only in a predetermined region on the n-type GaN 28, a resist is used as a mask to increase the resistance by implanting B ions.
Conductive area (active element area) on N as well as on SiC
24 and a high-resistance region (passive element region) 25 are formed. After removing the SiO ₂ film 26, the SiO ₂ film is
As shown in (1), deposition is performed on the entire surface of 2000A, and an opening is provided in a predetermined region on n-type GaN using a resist as a mask.

Next, 500 A of aluminum (Al) and 1500 A of titanium (Ti) are vapor-deposited on the entire surface, and an ohmic electrode 29 is formed in the opening by a lift-off method using the resist. The ohmic electrode 29 is heat-treated at 900 ° C. in order to improve the ohmic contact with the underlying n-type GaN 27.

Next, an ohmic electrode 30 is formed in the active element region 24 on SiC in the same manner as described above. However, SiC
The upper ohmic electrode is different from the ohmic electrode 29 on GaN in that Ti is formed by vapor-depositing 2000 A and that heat treatment is not required after the vapor deposition.

Next, openings are provided in predetermined regions on SiC and GaN in exactly the same manner as in the ohmic electrode forming method.
Platinum (Pt) was vapor-deposited on the entire surface of 2000A and lifted off to produce gate electrodes 31 and 32.
3. The latter-stage FET 34, the through FET 35 in FIG. 4, and the shunt FET 36 are completed.

On the other hand, the inductor 37 in the circuit diagram of FIG.
The capacitor 38 is realized on the passive element region 25 of SiC, and the inductor is generally realized by a spiral inductor as shown in FIG. In order to reduce this wiring loss, the inductor is
A capacitor is formed using a layer wiring, with an insulating film interposed between the first and second layer wiring. First, a 5000A SiN film 39 is deposited as an interlayer insulating film, and contact holes for connecting to respective electrodes of the FET and the bipolar transistor are formed. Then, titanium / gold (Ti / Au) is deposited at 500A each.
/ 5000A is vapor-deposited on the entire surface, and a wiring portion and a capacitor lower metal are formed by a single-layer wiring 40 in a predetermined region using a resist as a mask by an ion milling method.
00A is deposited.

Next, a two-layer wiring 42 is formed by thick film plating. Ti / Au is vapor-deposited on the entire surface of 500A / 2000A to form a base metal for plating, and then a predetermined area, that is, a wiring portion, an inductor portion, a capacitor portion, and a pad portion is formed with a resist, and then a 3 μm-thick Au is plated on the entire surface. And lift off. Further, the base metal is removed with a potassium iodide (KI) solution, and the inductor 37, the capacitor 38, and the pad 43 are formed by the two-layer wiring. Finally, a SiN film 44 as a surface protection film is deposited on the entire surface at 7000 A,
Only three parts are opened by the RIE method. By connecting each of the FETs and bipolar transistors as active elements and inductors, capacitors and resistors as passive elements with one-layer wiring or two-layer wiring, a local oscillator 46 / SPD is provided.
A circuit in which the T switch 23 / 2-stage amplifier 22 is integrated on one chip is completed.

In the above example, the case where a bipolar transistor is formed on Si has been described.
The same applies to the case where the MOSFET 45 shown in FIG. Further, the case where the inductor and the capacitor are realized on the SiC has been described as an example, but this may be manufactured in the passive element region 25 on the GaN.

The local oscillation amplifier / SP configured as described above
The effect of the DT switch / two-stage amplifier integrated circuit will be described below.

FIG. 15 shows GaN, 6H-SiC, and GaAs.
The band gap (Eg) value, the saturated electron velocity, and the thermal conductivity of s and Si are shown. GaN, 6H-SiC is GaAs
Since it has a larger band gap than s or Si, it is generally called a wide gap semiconductor. Since the band gap is large, the semiconductor device using these materials is excellent in environmental resistance, such as being operable at a high temperature and being excellent in radiation resistance.

As can be seen from FIG. 15, GaN, 6
The saturation electron velocity of H-SiC is excellent in high frequency characteristics.
GaN, since it is equal to or more than aAs
It can be said that SiC has physical properties suitable for high-frequency devices. Further, GaN can be selectively grown only in a desired region using, for example, a SiO ₂ film as a mask (1995).
Spring, 42nd Lecture Meeting on Applied Physics, 28p-
Since ZH-11) and SiC can be grown on Si by a CVD method, three types of semiconductors of Si / SiC / GaN can be integrated.

In a conventional GaAs high-frequency semiconductor device, part or all of a passive element portion is realized on a printed circuit board from the viewpoint of cost reduction, and an active element portion requiring excellent high-frequency characteristics is realized on GaAs. I was doing
Although it has been difficult to reduce the size of the high-frequency semiconductor device portion on the printed circuit board, the above-described configuration makes it possible to realize passive elements on SiC and at the same time integrate active elements for high-frequency on the same chip. As described above, the passive element realized on the printed circuit board can be integrated in the chip.

Further, integration of semiconductor devices using Si and compound semiconductors, which has been difficult until now,
It can be realized on a single chip in the form of a Si / SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above-described configuration, for these reasons, the high-frequency communication device can be downsized and highly functional. In addition, since a semiconductor containing a harmful substance such as GaAs is not used, the safety of the high-frequency semiconductor device can be improved. Can be improved than before.

(Embodiment 2) FIG. 5 illustrates a second embodiment of the present invention. As a high-frequency semiconductor device, a transmission amplifier 22 is provided on an n-type GaN 28 and a mixer 48 is provided as an S-type semiconductor device.
This is a case where the inductor 37 and the capacitor 38, which are realized on i1, and are passive elements, are realized on SiC.

The inductor and the capacitor form a part of the circuit of the transmission amplifier 22 or the mixer 48, and are connected to the FET, the bipolar transistor, or the MOSFET in each semiconductor device by one-layer or two-layer wiring. Has become. The specific implementation method is exactly the same as in the first embodiment.

In the example of FIG. 5, the transmission amplifier is GaN.
In the case where the transmission amplifier is implemented on GaN and the switch is implemented on Si, the transmission amplifier is implemented on GaN and the oscillator is implemented on Si.
If the receiver amplifier is implemented on GaN, or if the receiver amplifier is implemented on GaN and the mixer is implemented on Si,
The same applies to the case where the switch is realized on aN, the switch is realized on Si, the receiving amplifier is realized on GaN, and the oscillator is realized on Si.

In the above example, the case where the inductor and the capacitor are realized on the SiC is illustrated.
It may be formed in the passive element region 25 on N.

According to the above configuration, similarly to the first embodiment, the integration of a semiconductor device made of Si and a semiconductor device made of a compound semiconductor, which has been difficult until now, can be performed by using Si /
This can be realized on a single chip in the form of a SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above configuration,
The transmission amplifier and mixer are realized on one chip.
This means that two of the nine blocks of the high-frequency section shown in FIG. As a result, the size of the high-frequency communication device can be reduced, and the safety of the high-frequency communication device can be improved more than before because a semiconductor containing a harmful substance such as GaAs is not used.

(Embodiment 3) FIG. 6 illustrates a third embodiment of the present invention. As a high-frequency semiconductor device, a transmission amplifier 22 and a reception amplifier 49 are provided on an n-type GaN 4 and a mixer 48 is provided. This is a case where the inductor 37 and the capacitor 38, which are realized on Si1, and are passive elements, are realized on SiC. These inductors and capacitors constitute a part of the circuit of the transmission amplifier 22, the reception amplifier 49, or the mixer 48, and are connected to the FET, the bipolar transistor, or the MOSFET in each semiconductor device by one-layer or two-layer wiring. It has a configuration. The specific implementation method is exactly the same as in the first embodiment.

In the example shown in FIG. 6, two out of three transmission amplifiers, reception amplifiers and antenna switches are realized on GaN, and the mixer is realized on Si. Select two out of three amplifiers, receiver amplifiers, and antenna switches, and place one of them on GaN,
In the case where the other is realized on SiC, for each of the above combinations, when the switch is realized on Si, or when the oscillator is realized on Si, there is a possibility that it is the same as above.

In the above example, the case where the inductor and the capacitor are realized on the SiC is illustrated.
It may be formed in the passive element region 25 on N.

According to the above configuration, similarly to the first embodiment, the integration of a semiconductor device made of Si and a semiconductor device made of a compound semiconductor, which has been difficult so far, can be achieved by using Si /
This can be realized on a single chip in the form of a SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above configuration,
The transmitting amplifier, the receiving amplifier, and the mixer are realized on one chip, and three of the nine high-frequency blocks shown in FIG. 14 are integrated. As a result, the size of the high-frequency communication device can be reduced, and the safety of the high-frequency communication device can be improved more than before because a semiconductor containing a harmful substance such as GaAs is not used.

(Embodiment 4) FIG. 7 illustrates a tenth embodiment of the present invention, wherein a transmitting amplifier 22, a receiving amplifier 49, and an antenna switch (SPDT switch) 23 are arranged as n high-frequency semiconductor devices. In this case, the mixer 48 is realized on Si1 and the inductor 37 and the capacitor 38, which are passive elements, are realized on SiC. These inductors and capacitors form a part of the circuit of the transmission amplifier, the reception amplifier, the antenna switch or the mixer, and are connected to the FET, the bipolar transistor or the MOSFET in each semiconductor device by one or two layers wiring. It has a configuration. The specific implementation method is exactly the same as in the first embodiment.

In the example shown in FIG. 7, the transmission amplifier, the reception amplifier, and the antenna switch are all realized on GaN, and the mixer is realized on Si. When two out of three amplifiers and antenna switches are realized on GaN and the remaining one is realized on SiC, one of the three amplifiers for transmission, reception and antenna is realized on GaN. Then, when the remaining two are realized on SiC, furthermore, for each of the above combinations, when the switch is realized on Si, the oscillator may be realized on Si, the same as above in any case It is.

In the above example, the case where the inductor and the capacitor are realized on the SiC is illustrated.
It may be formed in the passive element region 25 on N.

According to the above configuration, similarly to the first embodiment, the integration of a semiconductor device made of Si and a semiconductor device made of a compound semiconductor, which has been difficult so far, can be achieved by using Si /
This can be realized on a single chip in the form of a SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above configuration,
The transmitting amplifier, the receiving amplifier, the antenna switch, and the mixer are realized on one chip, and four out of the nine blocks of the high frequency section shown in FIG. 14 are integrated. This allows high-frequency communication equipment to be downsized,
Since a semiconductor containing a harmful substance such as GaAs is not used, the safety of the high-frequency communication device can be improved as compared with the related art.

(Embodiment 5) FIG. 8 illustrates a fifth embodiment of the present invention. As a high-frequency semiconductor device, a transmission amplifier 22 is provided on n-type GaN 28, and a mixer 48 and a switch 23 are provided on Si1. In this case, the inductor 37 and the capacitor 38, which are passive elements, are realized on SiC. The inductor and the capacitor form a part of the circuit of the transmission amplifier, the switch or the mixer, and are configured to be connected to the FET, the bipolar transistor or the MOSFET in each semiconductor device by one or two-layer wiring. . The specific implementation method is exactly the same as in the first embodiment.

In the example of FIG. 16, the transmission amplifier is Ga
In the case where the transmission amplifier is realized on GaN and the mixer and the oscillator are realized on Si, the transmission amplifier is realized on G and the mixer and the switch are realized on Si.
When the switch and the oscillator are realized on Si, the receiving amplifier is realized on GaN, and when the mixer and the switch are realized on Si, the receiving amplifier is realized on GaN. When the oscillator is realized on Si, the receiving amplifier is realized on GaN, and the switch and the oscillator are S
In the case of realizing on i, the above is the same in any case.

In the above example, the case where the inductor and the capacitor are realized on the SiC is illustrated.
It may be formed in the passive element region 25 on N.

According to the above configuration, similarly to the first embodiment, integration of a semiconductor device made of Si and a semiconductor device made of a compound semiconductor, which has been difficult so far, can be achieved by using Si /
This can be realized on a single chip in the form of a SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above configuration,
The transmission amplifier, switch, and mixer are realized on one chip, and three out of the nine blocks of the high-frequency section shown in FIG. 14 are integrated. As a result, the size of the high-frequency communication device can be reduced, and the safety of the high-frequency communication device can be improved more than before because a semiconductor containing a harmful substance such as GaAs is not used.

(Embodiment 6) FIG. 9 illustrates a sixth embodiment of the present invention. As a high-frequency semiconductor device, a transmission amplifier 22 is provided on an n-type GaN 28, a mixer 48, a switch 23, and an oscillator 50. Is realized on Si1, and the inductors 37 and capacitors 38, which are passive elements, are realized on SiC. The inductor and the capacitor form part of the circuit of the transmission amplifier, the switch or the oscillator, and the FET or the bipolar transistor or the M in each semiconductor device is formed by one or two layers of wiring.
It is configured to be connected to the OSFET. The specific implementation method is exactly the same as in the first embodiment.

In the example of FIG. 9, the transmission amplifier is GaN.
Although the above-described case has been described, the same applies to the case where the receiving amplifier is realized on GaN.

In the above example, the case where the inductor and the capacitor are realized on the SiC is illustrated.
It may be formed in the passive element region 25 on N.

According to the above configuration, similarly to the first embodiment, integration of a semiconductor device made of Si and a semiconductor device made of a compound semiconductor, which has been difficult until now, can be achieved by using Si /
This can be realized on a single chip in the form of a SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above configuration,
The transmission amplifier, the switch, the mixer, and the oscillator are realized on one chip, which means that four out of the nine blocks of the high frequency section shown in FIG. 14 are integrated. As a result, the size of the high-frequency communication device can be reduced, and the safety of the high-frequency communication device can be improved more than before because a semiconductor containing a harmful substance such as GaAs is not used.

(Embodiment 7) FIG. 10 illustrates a seventh embodiment of the present invention, in which a transmission amplifier 22 and a reception amplifier 49 are provided as n-type GaN 28 as a high-frequency semiconductor device.
Above, the mixer 48 and the switch 23 are realized on Si1,
Inductors 37 and capacitors 38, which are passive elements, are Si
This is the case where the function is realized on C. The inductor and the capacitor form part of the circuit of the transmission amplifier, the reception amplifier, or the switch, and are configured to be connected to the FET, the bipolar transistor, or the MOSFET in each semiconductor device by one-layer or two-layer wiring. ing. The specific implementation method is exactly the same as in the first embodiment.

In the example shown in FIG. 10, two out of three of the transmitting amplifier, the receiving amplifier, and the antenna switch are all connected to Ga.
N, and the mixer and switch are realized on Si. Two out of three transmission amplifiers, reception amplifiers, and antenna switches were selected, and one of them was selected on GaN. When one is realized on SiC and a mixer and a switch are realized on Si, and for each of the above combinations, a switch and an oscillator are realized on Si,
It is possible that the mixer and the oscillator are realized on Si, but the same is true in any case.

In the above example, the case where the inductor and the capacitor are realized on the SiC is illustrated.
It may be formed in the passive element region 25 on N.

According to the above configuration, similarly to the first embodiment, the integration of a semiconductor device made of Si and a semiconductor device made of a compound semiconductor, which has been difficult until now, can be achieved by using Si /
This can be realized on a single chip in the form of a SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above configuration,
The transmitting amplifier, the receiving amplifier, the antenna switch, the switch, and the mixer are realized on one chip, and four out of the nine blocks of the high frequency unit shown in FIG. 14 are integrated. As a result, the size of the high-frequency communication device can be reduced, and the safety of the high-frequency communication device can be improved more than before because a semiconductor containing a harmful substance such as GaAs is not used.

(Embodiment 8) FIG. 11 illustrates an eighth embodiment of the present invention. As a high-frequency semiconductor device, a transmission amplifier 22 and a reception amplifier 49 are formed of n-type GaN 28
The mixer 48, the switch 23, and the oscillator 50 are
This is a case where the inductor 37 and the capacitor 38 as the passive elements are realized on SiC. These inductors and capacitors form part of any or all circuits of a transmission amplifier, a reception amplifier, a switch, a mixer, and an oscillator. The FET or the bipolar transistor in each semiconductor device is formed by one or two layers of wiring. Or M
It is configured to be connected to the OSFET. The specific implementation method is exactly the same as in the first embodiment.

In the example shown in FIG. 11, two of the three components of the transmitting amplifier, the receiving amplifier, and the antenna switch are connected to Ga.
Although the case of realizing on N is shown, a case where two of three of a transmitting amplifier, a receiving amplifier, and an antenna switch are selected, one of which is realized on GaN, and the other is realized on SiC. Is the same as above.

In the above example, the case where the inductor and the capacitor are realized on the SiC is illustrated.
It may be formed in the passive element region 25 on N.

According to the above configuration, similarly to the first embodiment, the integration of a semiconductor device made of Si and a semiconductor device made of a compound semiconductor, which has been difficult until now, can be achieved by using Si /
This can be realized on a single chip in the form of a SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above configuration,
The transmitting amplifier, the receiving amplifier, the switch, the mixer, and the oscillator are realized on one chip, and five of the nine blocks of the high frequency unit shown in FIG. 14 are integrated. This allows high-frequency communication equipment to be downsized,
Since a semiconductor containing a harmful substance such as GaAs is not used, the safety of the high-frequency communication device can be improved as compared with the related art.

(Embodiment 9) FIG. 12 illustrates a ninth embodiment of the present invention. As a high-frequency semiconductor device, a transmitting amplifier 22, a receiving amplifier 49 and an antenna switch 23 are mounted on an n-type GaN 28. , Mixer 48, switch 2
3 is realized on Si1 and inductor 3 is a passive element.
7. The case where the capacitor 38 is realized on SiC.
These inductors and capacitors form part of any or all circuits of a transmission amplifier, a reception amplifier, an antenna switch, a switch, and a mixer. The FET or bipolar in each semiconductor device is formed by one or two layers of wiring. It is configured to be connected to a transistor or a MOSFET. The specific implementation method is exactly the same as in the first embodiment.

In the example of FIG. 12, a case is shown in which the transmission amplifier, the reception amplifier, and the antenna switch are all realized on GaN, and the mixer and the switch are realized on Si. Two of the three amplifiers and antenna switches are realized on GaN, and the other one is SiC
When the mixer and the switch are realized on Si, the transmission amplifier, the reception amplifier, and the antenna switch
If one of them is realized on GaN, the other two are realized on SiC, and the mixer and switch are realized on Si,
Further, for each of the above combinations, when the switch and the oscillator are realized on Si, there may be a case where the mixer and the oscillator are realized on Si, but the same is true in any case.

Further, in the above example, the case where the inductor and the capacitor are realized on the SiC is illustrated.
It may be formed in the passive element region 25 on N.

According to the above configuration, similarly to the first embodiment, the integration of a semiconductor device made of Si and a semiconductor device made of a compound semiconductor, which has been difficult until now, can be achieved by using Si /
This can be realized on a single chip in the form of a SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above configuration,
The transmission amplifier, the reception amplifier, the antenna switch, the switch, and the mixer are realized on one chip, and five of the nine blocks of the high frequency unit shown in FIG. 14 are integrated. As a result, the size of the high-frequency communication device can be reduced, and the safety of the high-frequency communication device can be improved more than before because a semiconductor containing a harmful substance such as GaAs is not used.

(Embodiment 10) FIG. 13 shows a first embodiment of the present invention.
The transmission amplifier 22, the reception amplifier 49, and the antenna switch 23 are realized on the n-type GaN 28 as a high-frequency semiconductor device, and the mixer 49, the switch 23, and the oscillator 50 are realized on Si1. This is a case where an inductor 37 and a capacitor 38, which are passive elements, are realized on SiC. These inductors and capacitors form part of any or all of the circuits of the transmission amplifier, the reception amplifier, the antenna switch, the switch, the mixer, and the oscillator.
ET or bipolar transistor or MOSF
It is configured to be connected to ET. The specific implementation method is exactly the same as in the first embodiment.

In the example of FIG. 13, the case where all of the transmission amplifier, the reception amplifier, and the antenna switch are realized on GaN is shown. However, two of the three transmission amplifiers, the reception amplifier, and the antenna switch are realized. Is realized on GaN, the transmission amplifier, the reception amplifier, and the antenna switch
The same applies to the case where one of them is realized on GaN.

In the above example, the case where the inductor and the capacitor are realized on the SiC is illustrated.
It may be formed in the passive element region 25 on N.

According to the above configuration, similarly to the first embodiment, the integration of a semiconductor device made of Si and a semiconductor device made of a compound semiconductor, which has been difficult until now, can be achieved by using Si /
This can be realized on a single chip in the form of a SiC / GaN hybrid integrated circuit. In the high-frequency semiconductor device having the above configuration,
A transmission amplifier, a reception amplifier, an antenna switch, a switch, a mixer, and an oscillator are realized on one chip.
This means that six out of the nine blocks of the high frequency section shown in FIG. As a result, the size of the high-frequency communication device can be reduced, and the safety of the high-frequency communication device can be improved more than before because a semiconductor containing a harmful substance such as GaAs is not used.

[0083]

As is apparent from the above description, according to the high-frequency semiconductor device and the high-frequency communication device of the present invention, the passive elements can be realized on SiC and the high-frequency active elements can be integrated on the same chip. As a result, passive elements that are conventionally realized on a printed circuit board can be integrated in a chip.

Further, a high-frequency communication device, which has conventionally been constituted by a semiconductor device made of Si and a semiconductor device made of GaAs, is replaced with a hybrid integrated circuit of SiC / GaN or Si.
Since it can be realized on a single chip in the form of a / SiC / GaN hybrid integrated circuit, a high-frequency semiconductor device can be reduced in size and function, and a high-frequency communication device can be reduced in size.

Further, since a semiconductor containing a harmful substance such as GaAs is not used, the safety of the high-frequency semiconductor device / high-frequency communication device can be improved more than before.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a method for manufacturing a high-frequency semiconductor device in Embodiment 1 of the present invention.

FIG. 2 is a circuit diagram of a transmission amplifier (two-stage amplifier).

FIG. 3 is a circuit diagram of an SPDT switch.

FIG. 4 is a circuit diagram of an amplifier for a local oscillator (local oscillation amplifier).

FIG. 5 is a cross-sectional view illustrating a high-frequency communication device according to Embodiment 2 of the present invention.

FIG. 6 is a sectional view illustrating a high-frequency communication device according to a third embodiment of the present invention.

FIG. 7 is a sectional view illustrating a high-frequency communication device according to a fourth embodiment of the present invention.

FIG. 8 is a sectional view illustrating a high-frequency communication device according to a fifth embodiment of the present invention.

FIG. 9 is a cross-sectional view illustrating a high-frequency communication device according to a sixth embodiment of the present invention.

FIG. 10 is a sectional view illustrating a high-frequency communication device according to a seventh embodiment of the present invention.

FIG. 11 is a sectional view illustrating a high-frequency communication device according to an eighth embodiment of the present invention.

FIG. 12 is a sectional view illustrating a high-frequency communication device according to a ninth embodiment of the present invention.

FIG. 13 is a sectional view illustrating a high-frequency communication device according to a tenth embodiment of the present invention.

FIG. 14 is a block diagram of a high-frequency unit in a mobile phone for explaining a conventional high-frequency semiconductor device and high-frequency communication device;

FIG. 15 is a view showing physical properties of various semiconductors.

FIG. 16 is a cross-sectional view illustrating a method for manufacturing the high-frequency semiconductor device in Embodiment 1 of the present invention.

FIG. 17 is a cross-sectional view illustrating a method for manufacturing the high-frequency semiconductor device in Embodiment 1 of the present invention.

FIG. 18 is a cross-sectional view illustrating a method for manufacturing the high-frequency semiconductor device in Embodiment 1 of the present invention.

FIG. 19 is a cross-sectional view illustrating a method for manufacturing the high-frequency semiconductor device in Embodiment 1 of the present invention.

FIG. 20 is a cross-sectional view illustrating a method for manufacturing the high-frequency semiconductor device in Embodiment 1 of the present invention.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 p-type Si 2 collector buried layer 3 n-type Si 4 insulating type 6H-SiC 5 n-type SiC 6 SiC region 7 SiO ₂ film 8 SiN film 9 p ⁺ layer 10 LOCOS 11 p-type base layer 12 collector contact layer 13 PSG film Reference Signs List 14 polysilicon 15 emitter contact layer 16 base contact layer 17 base electrode 18 collector electrode 19 emitter electrode 20 bipolar transistor 21 resistor 22 transmission amplifier 23 SPDT switch 24 active element region (conductive region) 25 passive element region (high resistance region) Reference Signs List 26 SiO ₂ film 27 Insulated GaN 28 n-type GaN 29 Ohmic electrode (on GaN) 30 Ohmic electrode (on SiC) 31 Gate electrode (on GaN) 32 Gate electrode (on SiC) 33 Pre-stage FET 34 Post-stage FET 35 Through-FET 36 Shunt FET 37 Inductor 38 Capacitor 39 Interlayer insulating film 40 Single layer wiring 41 SiN film 42 Double layer wiring 43 Pad 44 Surface protection film 45 MOSFET 46 Local amplifier 47 Resist 48 Mixer 49 Receiving amplifier 50 Oscillator

Claims (10)

(57) [Claims] In a high frequency semiconductor device, a second semiconductor, SiC, is provided on silicon (Si), a first semiconductor forming a substrate, and GaN, a third semiconductor, is further provided on the SiC. Wherein the GaN is partially grown on the SiC, the SiC is partially formed on the Si, and the high-frequency active element is on the Si or SiC or GaN. A high-frequency semiconductor device characterized by having a configuration realized in (1). 2. A high-frequency communication device, comprising: a transmission amplifier as a high-frequency semiconductor device on the GaN;
2. The high-frequency wave according to claim 1, wherein one of two of the receiving amplifiers is realized, and one of three of a mixer, a switch, and an oscillator is realized on the Si. High-frequency communication equipment using semiconductor devices. 3. In a high-frequency communication device, any two of a transmission amplifier, a reception amplifier, and an antenna switch are realized as a high-frequency semiconductor device on the SiC or GaN, and a mixer is further provided on the Si. 2. The high-frequency communication device using the high-frequency semiconductor device according to claim 1, wherein one of three switches and an oscillator is realized. 4. In a high-frequency communication device, a transmission amplifier, a reception amplifier, and an antenna switch are realized as a high-frequency semiconductor device on the SiC or GaN, and a mixer, a switch, and an oscillator on the Si. 2. A high-frequency communication device using the high-frequency semiconductor device according to claim 1, wherein one of the devices is realized. 5. A high-frequency communication device, comprising: a transmission amplifier on the GaN as a high-frequency semiconductor device;
2. The high-frequency device according to claim 1, wherein any one of two receiving amplifiers is realized, and two of a mixer, a switch, and an oscillator are realized on the Si. 3. High-frequency communication equipment using semiconductor devices. 6. A high-frequency communication device, comprising: a transmission amplifier as a high-frequency semiconductor device on the GaN;
2. The high-frequency device using the high-frequency semiconductor device according to claim 1, wherein one of the two receiving amplifiers is realized, and further, a mixer, a switch, and an oscillator are realized on the Si. Communication equipment. 7. In a high-frequency communication device, any two of a transmission amplifier, a reception amplifier, and an antenna switch are realized as a high-frequency semiconductor device on the SiC or GaN, and a mixer, 2. A high-frequency communication device using the high-frequency semiconductor device according to claim 1, wherein two out of three switches and oscillators are realized. 8. In a high-frequency communication device, any two of a transmission amplifier, a reception amplifier, and an antenna switch are realized as a high-frequency semiconductor device on the SiC or GaN, and a mixer is further provided on the Si. A high-frequency communication device using the high-frequency semiconductor device according to claim 1, wherein a switch and an oscillator are realized. 9. A high-frequency communication device, wherein a transmission amplifier, a reception amplifier, and an antenna switch are realized as a high-frequency semiconductor device on the SiC or GaN, and a mixer, a switch, and an oscillator on the Si. 2. A high-frequency communication device using the high-frequency semiconductor device according to claim 1, wherein two of the above are realized. 10. In a high-frequency communication device, a transmission amplifier, a reception amplifier, and an antenna switch are realized as a high-frequency semiconductor device on the SiC or GaN, and a mixer, a switch, and an oscillator are realized on the Si. A high-frequency communication device using the high-frequency semiconductor device according to claim 1.