JP2997738B2 - Liquid crystal electro-optical device manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a liquid crystal electro-optical device which has conventionally been constituted by two substrates, but is constituted by only one substrate to produce a new liquid crystal electro-optical device which is thin and lightweight. It relates to a manufacturing method.

[0002]

2. Description of the Related Art As a conventional liquid crystal electro-optical device, a TN type or STN type using a nematic liquid crystal has been widely put into practical use. Recently, a device using a ferroelectric liquid crystal has been known. In these liquid crystal electro-optical devices, a liquid crystal composition is sandwiched between a first substrate having electrodes and leads on a substrate, and a second substrate having electrodes and leads on the substrate. This is an apparatus in which an electric field is applied to a liquid crystal composition and liquid crystal molecules are operated based on the anisotropy of the dielectric constant of the liquid crystal, thereby utilizing the optical anisotropy of the liquid crystal molecules.

[0003] Specifically, TN (twisted nematic)
In the case of the liquid crystal electro-optical device, as shown in FIG. 2, ITO (indium tin oxide) (20) of the first substrate (201) is used.
2) An alignment film (203) mainly composed of polyimide is provided thereon, and a means for uniformly aligning liquid crystal molecules (204) by a rubbing method is provided. Similarly, a second substrate is provided, and the rubbing direction of the first substrate and the second substrate is 90 °.
Nematic liquid crystal composition (205)
Is sandwiched.

The liquid crystal molecules are aligned in the rubbing direction on the contact surfaces of the liquid crystal layer with both substrates due to the rubbing control force. In the vicinity of the middle of the liquid crystal layer, a spiral is drawn between the upper and lower molecules located at 90 ° so that the energy is minimized.

Each of these devices requires a polarizing plate, and it is necessary to regularly orient the liquid crystal in a certain direction in the device. Therefore, in the structure of the apparatus, a container for holding a liquid crystal material is constituted by a pair of substrates, the liquid crystal is injected into the container, the liquid crystal is aligned, and the optical effect is used.

On the other hand, there is known a dispersion type liquid crystal which does not require such a polarizing plate or alignment and has a bright screen and good contrast. This dispersion type liquid crystal is a liquid crystal in which a light-transmitting solid-state polymer holds nematic, cholesteric, or smectic liquid crystals in a granular or spongy state. As a method of manufacturing this liquid crystal device, a method is known in which liquid crystal is dispersed in a polymer by encapsulating the liquid crystal, and the polymer is formed as a thin film on a film or a substrate. Here, gelatin, gum arabic, polyvinyl alcohol and the like have been proposed as encapsulating substances.

In these techniques, the liquid crystal molecules encapsulated in polyvinyl alcohol are arranged in the direction of the electric field in the presence of an electric field if they have a positive dielectric anisotropy in the thin film. However, when the refractive index of the liquid crystal is equal to the refractive index of the polymer, transparency is exhibited. On the other hand, when there is no electric field, the liquid crystal is oriented in various directions without being arranged in a specific direction, so the refractive index of the liquid crystal is shifted from the refractive index of the polymer, the light is scattered and the transmission of light is hindered, It becomes cloudy. In addition to the above-described examples, there are some known polymers and thin films in which the encapsulated liquid crystal is dispersed to have a polymer therein. For example, those in which a liquid crystal material is dispersed in an epoxy resin, those using phase separation between a liquid crystal and a photocurable substance, those in which a liquid crystal is impregnated in a three-dimensionally connected polymer, and the like are known. . In the present invention, these liquid crystal electro-optical devices are collectively called dispersion type liquid crystal.

[0008]

In the practical use of the large-sized liquid crystal electro-optical device as described above, especially in the method of manufacturing the liquid crystal electro-optical device, a technique for manufacturing a large-sized device at low cost is required. ing.

[0009] The problem with increasing the size is that the TN type,
Since the STN type, FLC type, and the like need to orient liquid crystal molecules in a certain direction, a liquid crystal material must be injected into a container surrounded by a pair of substrates.

In order to inject these liquid crystals, as shown in FIG. 3, a liquid crystal cell (301) composed of a pair of substrates prepared in advance is placed in a container of a liquid crystal injection device, and the container is evacuated. Then, after removing the air inside the liquid crystal cell, the liquid crystal (303) is brought into contact with the injection port (302) of the cell, and then the pressure in the container of the injection device is increased with nitrogen (304) or the like. The injection must be performed using the pressure difference between the pressure in the liquid crystal cell and the pressure in the container.

When the size of the liquid crystal device is increased, for example, in the case of an A4 size liquid crystal cell, the distance from the injection port (302) to the edge of the liquid crystal cell is 200 mm or more. The distance between the pair of substrates is about 20 μm at the maximum, and
The liquid crystal material had to move by more than mm, and the injection time required a very long time.

Further, since a vacuum atmosphere or a reduced-pressure atmosphere is required for the injection step, an expensive manufacturing apparatus is required, and the manufacturing cost of the liquid crystal cell is high.

Further, the liquid crystal composition is an aggregate of several kinds of single liquid crystal molecules, and the transition temperature and the vapor pressure point are different for each liquid crystal substance. And the composition ratio of the liquid crystal composition changes,
There has been a problem that the electro-optical properties of the liquid crystal composition of the charged material and the electro-optical properties of the liquid crystal composition after injection significantly change.

Further, in order to keep the distance between the substrates even in a large-sized substrate, it is necessary to increase the thickness of the substrate. In some cases, two substrates are required, and the weight becomes heavy. Contradictions have arisen with light, thin and short large LCD panels.

[0015]

Therefore, in the present invention, a light control layer in which a liquid crystal material is dispersed is printed on a first electrode provided on one substrate by a printing method such as a screen method or an offset method, or by a spin method. A method for manufacturing a liquid crystal electro-optical device including a single substrate that does not require an opposing substrate by solidifying by heat or ultraviolet energy after coating by a method, and further providing a second electrode thereon. It is.

Specifically, 20 μm of a mixture of an organic resin, which is a transparent solid substance, and a liquid crystal is formed on one substrate having a first electrode on which predetermined patterning has been performed.
In order to produce a light control layer thin film of m or less, transfer printing by an offset method, printing by a screen method, applying by rotating at a high speed with a spinner, and then curing by organic resin curing means (heat or ultraviolet) A second electrode and a lead comprising one or more wires,
By providing a protective film and a protective film in order, a liquid crystal electro-optical device can be realized with only one substrate.

Here, the dimming layer includes a transparent solid substance (a transparent solid polymer or a polymer-forming monomer) and a nematic, cholesteric or smectic liquid crystal. Is what is being held. This translucent solid polymer is used alone or as a mixture of polyethylene, polymethacrylate, polystyrene, polyvinyl chloride, polyacrylonitrile, polyvinyl alcohol, polyester, polyamide resin, polyethylene terephthalate resin, fluororesin, silicone resin and the like. Can be

The light modulating layer constituting material is prepared by dissolving a polymer-forming monomer and a liquid crystal material or the solid phase polymer and a liquid crystal material in a common solvent. In the former case, the mixture is applied onto a substrate by a coating method and then irradiated with heat or light to form a light control layer. On the other hand, the latter applies a dissolved liquid material to form a liquid medium layer, and then removes the solvent to form a light control layer.

As the solvent, ketones, alcohols,
Unsaturated hydrocarbons such as benzene and toluene and water can be used. These are appropriately selected depending on the method of application, and used alone or in combination.

Depending on the shape and characteristics of the liquid crystal material, a coating method such as doctor knife, roll coater, curtain coater, knife coater, spray coating, spin coating, screen printing, offset printing and the like can be adopted.

When a large number of electrodes are used in a matrix configuration, a signal line having a matrix configuration on a substrate and a P-channel thin-film transistor and an N-channel thin-film transistor in each pixel electrode in a complementary configuration are used. A thin film transistor is provided, one of the input / output sides of the complementary thin film transistor is connected to the pixel electrode, the other is connected to a first signal line of a pair of signal lines having the matrix configuration, and the gate of the complementary thin film transistor is connected. Provided with an electric circuit connected to the second signal line of the signal lines having the matrix configuration may be used as a substrate.

Also, an N-channel thin film transistor is provided on a signal line having a matrix structure and each pixel electrode on a substrate, and one of the input / output sides of the thin film transistor is provided with the pixel electrode, and the other is provided with the matrix structure. A substrate provided with an electric circuit connected to the first signal line of the pair of signal lines and the gate of the thin film transistor connected to the second signal line of the signal line having the matrix structure may be used as the substrate.

Further, in a liquid crystal device having a matrix configuration on a substrate, an arrangement is provided in which an electric non-linear element is provided in a wiring connected to each pixel, and an output of the electric non-linear element is connected to the pixel. A substrate may be used.

[0024]

[Embodiment 1] FIG. 1 shows a process chart of a method for manufacturing a liquid crystal electro-optical device of this embodiment. FIG. 1 is a schematic diagram for explanation, and is therefore drawn differently from actual dimensions. The substrate to be used is ordinary blue plate glass 100
A transparent pixel electrode 101 having a thickness of 2000
The TO formed in a predetermined pattern was used. The electrode 101 is formed by etching in a predetermined pattern, and the terminal portion 102 of the second electrode is formed simultaneously with the pixel electrode 101.
To form (Fig. 1 (A))

However, this terminal portion is effective especially when it is made of metal, and plays a role of reducing the resistance of the extraction portion of the second electrode.

Next, a mixed homogeneous solution of the prepolymer and the nematic liquid crystal was formed to a thickness of about 15 μm by a screen printing method. As this prepolymer, a uniform solution was used in which trimethylolpropane triacrylate was mixed with a polymerization initiator at a ratio of about 25% to a normal nematic liquid crystal material. Thereafter, the printed mixed solution is left for a while, and after sufficiently leveling, the entire surface of the substrate is irradiated with ultraviolet light to cure (polymerize) the monomer formed between the substrates, and the light control layer 103 is formed to have a thickness of 25 μm. It was formed in thickness. (FIG. 1 (B))

In the case of this embodiment, there is no need to remove the solvent after the light control layer is applied, and the surface of the light control layer is not disturbed by evaporation of the solvent during leveling, so that the surface of the light control layer is flat. And it was convenient to realize uniform liquid crystal electro-optical characteristics.

Further, ITO is formed on the dimming layer 103 as the second electrode 104 by 2000 .ANG., And is etched and removed in a predetermined pattern. At this time, there is a high possibility of damaging the light control layer. Therefore, when forming the ITO film by the sputtering method, the heating temperature is lower than usual, and the ITO film in the state of a lower oxide is further reduced with the oxygen atmosphere concentration further reduced. To form Then, using a predetermined mask pattern, a mask is formed with a photoresist, dry-etched with an etching gas containing carbon tetrachloride to pattern the ITO film, and then oxidized in an oxidizing atmosphere at a temperature of about 250 ° C. Process to oxidize the ITO film to improve transmittance,
The second electrode can be formed by lowering the electric resistance.

Of course, ITO can be patterned by wet etching using a normal acid solution, but in that case, a light control layer having resistance to the acid solution to be used must be selected.

Next, a light-transmitting protective film and a silicone resin are formed on the second electrode by a coating method.
Was completed, and the liquid crystal electro-optical device could be completed with only one substrate. (Fig. 1 (C))

Embodiment 2 In this embodiment, a liquid crystal display device will be described using a liquid crystal display device having a circuit configuration as shown in FIG. 4, that is, an inverter type circuit configuration. FIG. 5 shows an actual arrangement of electrodes and the like corresponding to this circuit configuration. For simplification of description, only portions corresponding to 2 × 2 are described . 4 and 5,
1 and 2 are drive circuits and 3 to 8 are drive circuits and switching elements.
15 is a liquid crystal, and 16 is a counter electrode.
The area indicated by 23 indicates one pixel, and the other symbols are the same as those in FIG.
Is the same. FIG. 6 shows an actual drive signal waveform.
For the sake of simplicity, the description will be made using signal waveforms in the case of a 4 × 4 matrix configuration.

First, a method for manufacturing a switching element used in this embodiment will be described with reference to FIG. In FIG. 7A, a silicon oxide film as a blocking layer 51 is formed on a glass 50 which can withstand a heat treatment at an inexpensive temperature of 700 ° C. or less, for example, about 600 ° C. by using a magnetron RF (high frequency) sputtering method. It is made to a thickness of 3000 mm. The process conditions are an atmosphere of 100% oxygen, a film formation temperature of 15 ° C., an output of 400 to 800 W, and a pressure of 0.5 Pa.
And The deposition rate using quartz or single crystal silicon as the target was 30 to 100 ° / min.

On this, a silicon film was formed by LPCVD (low pressure gas phase), sputtering or plasma CVD. When formed by the reduced pressure gas phase method, the temperature is 1
450-550 ° C lower by 00-200 ° C, for example 530 ° C
With disilane (Si ₂ H ₆ ) or trisilane (Si ₃ H
₈ ) was supplied to a CVD apparatus to form a film. The pressure in the reactor was 30 to 300 Pa. The deposition rate is 50-250 ° /
Minutes. In order to control the threshold voltage (Vth) of the NTFT and PTFT to be substantially the same, boron is used to diborane to 1 × 10 ¹⁵ to 1 × 10 ¹⁸ cm ^−3.
May be added during the film formation.

In the case of performing the sputtering method, the back pressure before the sputtering was set to 1 × 10 ⁻⁵ Pa or less, and a single crystal silicon was used as a target in an atmosphere in which hydrogen was mixed with 20 to 80% of argon. For example, argon was 20% and hydrogen was 80%. The deposition temperature is 150 ° C., the frequency is 13.56 MHz,
The sputter output was 400-800 W and the pressure was 0.5 Pa.

When a silicon film is formed by a plasma CVD method, the temperature is set to, for example, 300 ° C. and monosilane (SiH
₄ ) or disilane (Si ₂ H ₆ ) was used. These were introduced into a PCVD apparatus, and a high-frequency power of 13.56 MHz was applied to form a film.

The coatings formed by these methods are:
It is preferable that oxygen is 5 × 10 ²¹ cm ⁻³ or less. If the oxygen concentration is high, crystallization is difficult, and the thermal annealing temperature must be increased or the thermal annealing time must be increased. If the amount is too small, the leakage current in the off state increases due to the backlight. Therefore 4 × 10
The range was ¹⁹ to 4 × 10 ²¹ cm ⁻³ . Hydrogen is 4x
It was 10 ²⁰ cm ⁻³ , which was 1 atomic% as compared with silicon 4 × 10 ²² cm ⁻³ . In order to further promote crystallization of the source and the drain, the oxygen concentration is set to 7 × 10 ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ c.
m ⁻³ or less, and oxygen is ion-implanted only into a channel formation region of a TFT constituting a pixel to form 5 × 10 ²⁰ to
You may add so that it may become 5 * 10 < ²¹ > cm <^-3> . At this time, since light is not irradiated to the TFTs constituting the peripheral circuit, it is effective to reduce the mixing of oxygen and to have a higher carrier mobility for high-frequency operation.

Next, a silicon film in an amorphous state is
After fabrication to a thickness of ~ 5000mm, for example 1500mm, 4
Medium-temperature heat treatment in a non-oxide atmosphere at a temperature of 50 to 700 ° C. for 12 to 70 hours, for example, 600 hours in a hydrogen atmosphere
It was kept at a temperature of ° C. Since a silicon oxide film having an amorphous structure is formed on the substrate surface below the silicon film, no specific nucleus is present in this heat treatment, and the whole is uniformly heat-annealed. That is, it has an amorphous structure at the time of film formation, and hydrogen is simply mixed therein.

By the annealing, the silicon film shifts from an amorphous structure to a highly ordered state, and a part of the silicon film exhibits a crystalline state. In particular, a region having a relatively high order in a state after the formation of silicon is particularly likely to be crystallized to be in a crystalline state. However, since the silicon existing between these regions is bonded to each other, silicon mutually pulls each other. Single crystal silicon peak 522 measured by laser Raman spectroscopy
A peak shifted to a lower frequency side than cm ⁻¹ is observed. Its apparent particle size, calculated from the half width, is 5
Although it is like a microcrystal having a size of 0 to 500 °, there are actually a large number of regions having high crystallinity and a cluster structure, and a semi-amorphous structure in which each cluster is bonded to each other by silicon (anchoring). Could be formed.

As a result, the coating exhibits a state substantially free of grain boundaries (hereinafter referred to as GB). Carriers can easily move from one cluster to another through the anchored locations between the clusters, so-called GB
Carrier mobility higher than that of polycrystalline silicon that clearly exists. That is, hole mobility (μh) = 10 to 200 cm
² / VSec, electron mobility (μe) = 15-300 cm
² / VSec is obtained.

On the other hand, when the film is polycrystallized by high-temperature annealing at 900 to 1200 ° C. instead of annealing at the above-mentioned medium temperature, segregation of impurities in the film occurs due to solid phase growth from nuclei. Impurities such as oxygen, carbon, and nitrogen increase, and the mobility in the crystal is large. However, a barrier (barrier) is formed in GB to hinder the movement of carriers there. As a result, a mobility of 10 cm ² / Vsec or more cannot be easily obtained. That is, in this embodiment, a silicon semiconductor having a semi-amorphous or semi-crystalline structure is used for such a reason. Thereafter, patterning is performed using a first photomask.
Thus, a silicon film 52 was obtained.

On this, a silicon oxide film was formed as a gate insulating film to a thickness of 500 to 2000 {for example, 1000}. This was made under the same conditions as those for forming the silicon oxide film as the blocking layer. During the film formation, a small amount of fluorine may be added to fix the sodium ions.

Thereafter, 1 to 5 × 10
A silicon film having a concentration of ²¹ cm ⁻³ or a multilayer film of the silicon film and molybdenum (Mo), tungsten (W), MoSi ₂ or WSi ₂ was formed thereon. This was patterned using a second photomask to obtain FIG. Gate electrode 9 for PTFT, NTF
A gate electrode 19 for T was formed. For example, channel length 1
0 μm, phosphorus-doped silicon as gate electrode 0.2 μm
m, and molybdenum was formed thereon to a thickness of 0.3 μm. In FIG. 7C, a photoresist 57 is formed using a photomask, and a source 10 for PTFT,
1-5 × 10 ¹⁵ cm of boron is applied to the drain 12.
A dose of ^-2 was added by ion implantation. Next, as shown in FIG. 7D, NTFT was formed using a photomask. Phosphorus was added as a source 20 and a drain 18 for NTFT by an ion implantation method at a dose of 1 to 5 × 10 ¹⁵ cm ⁻² .

These steps were performed through the gate insulating film 54. However, in FIG. 7B, the silicon oxide on the silicon film may be removed using the gate electrodes 9 and 19 as a mask, and then boron and phosphorus may be directly ion-implanted into the silicon film.

Next, heat annealing was performed again at 600 ° C. for 10 to 50 hours. The source 10 and the drain 12 of the PTFT and the source 20 and the drain 18 of the NTFT were activated to produce P ⁺ and N ⁺ by activating impurities. Channel formation regions 21 and 11 are formed below the gate electrodes 9 and 19 as semi-amorphous semiconductors.

In this way, a C / TFT can be manufactured without applying a temperature to 700 ° C. or more in all steps, even though it is a self-aligned system. Therefore, it is not necessary to use an expensive substrate such as quartz as a substrate material, and this is a process very suitable for the large pixel liquid crystal display device of the present invention.

In this embodiment, the thermal annealing is performed as shown in FIG.
(D) was performed twice. However, the annealing in FIG. 7A may be omitted depending on the desired characteristics, and both may be omitted by the annealing in FIG. 7D to shorten the manufacturing time. In FIG. 7E, a silicon oxide film was formed on the interlayer insulator 65 by the above-described sputtering method. This silicon oxide film may be formed by an LPCVD method, a photo CVD method, or a normal pressure CVD method. For example, it was formed to a thickness of 0.2 to 0.6 μm, and then a window 66 for an electrode was formed using a photomask. Further, aluminum is formed on the entirety by sputtering, and leads 71 and 72 and contacts 67,
After fabricating No. 68 using a photomask, the surface was coated with an organic resin 69 for planarization, for example, a translucent polyimide resin, and the electrode hole was formed again using the photomask.

As shown in FIG. 7 (F), in order to connect the two TFTs to a complementary structure and connect the output terminals thereof to the electrodes of one pixel of the liquid crystal device as a transparent electrode, ITO (indium oxide) was formed by sputtering. (A tin oxide film). This was etched using a photomask to form the pixel electrode 17. This ITO film was formed at room temperature to 150 ° C. and achieved by annealing at 200 to 400 ° C. in oxygen or atmosphere.

Thus, PTFT 22 and NTFT
13 and a transparent conductive film electrode 70 as a pixel electrode were formed on the same glass substrate 50. The characteristics of the obtained TFT are P
In a TFT, the mobility is 20 (cm ² / Vs) and Vth is −
At 5.9 (V), the mobility is 40 (cm ² / V) for NTFT.
s) and Vth was 5.0 (V).

The above manufacturing method is an inverter type.
It goes without saying that the buffer type is exactly the same. Thus, a substrate was obtained.

Using the above substrate, a liquid crystal electro-optical device is manufactured in the order of the manufacturing steps shown in FIG. FIG. 8 is a schematic cross-sectional view of the liquid crystal device according to the present embodiment, and shows a cross-sectional view excluding the above-described active element. In this embodiment, since the active element is used, the second electrode on the dimming layer is not patterned but formed on almost the entire surface.
As shown in FIG. 8, a resin in which 50% by weight of a nematic liquid crystal was dispersed in an epoxy-modified acrylic resin having an ultraviolet curing property was formed on the substrate (230) by using a screen method.

The screen used had a mesh density of 125 meshes per inch and an emulsion thickness of 15 μm.
And The squeegee pressure was 1.5 kg / cm ² .

Next, after 10 minutes of leveling, 236 nm
With a high-pressure mercury lamp having an emission wavelength centered on
2,000 mJ of energy to cure the resin, 12
A light control layer (231) having a thickness of μm was formed.

Thereafter, the Mo sputtering is performed using a DC sputtering method.
(Molybdenum) is deposited at 2500 ° and the second electrode (23
2).

Thereafter, a black epoxy resin is printed by a screen method, and after pre-baking at 50 ° C. for 30 minutes,
Main firing is performed at 180 ° C. for 30 minutes, and a 50 μm protective film (2
33) was formed.

A drive IC having a TAB shape was connected to the leads on the substrate, and a reflection type liquid crystal display device composed of only one substrate was completed. In the present embodiment, one set of complementary TFTs is provided for each pixel as an active element. However, the present invention is not particularly limited to this configuration, and a plurality of sets of complementary TFTs may be provided. A set of complementary TFTs may be provided on a plurality of divided pixel electrodes.

Needless to say, a substrate provided with a normal TFT element instead of the complementary structure may be used.
In the present embodiment, since the TFT was used as the mactive element, the second electrode on the light control layer was not formed by patterning, but only had to be formed on the entire surface, so that the manufacturing method was very simple.

[Embodiment 3] In this embodiment, an example will be described in which a MIM element having electrically non-linear characteristics is used as an active element. First, as shown in FIG.
After a silicon oxide film (241) is provided on the polycarbonate (240) of
An ITO film is formed at a thickness of 1000 by DC sputtering, and then patterned by photolithography into a stripe having a width substantially equal to one side of the display pixel electrode. (242).

Thereafter, glow discharge is performed under the following conditions, and the Si _X C _Y (X + Y = 1) film (243) is
Å A film was formed. The film formation conditions are such that the gas mixture ratio C ₂ H ₄ is ₂ SC
CM, SiH ₄ is 1 SCCM, PH ₃ (5% by weight) / S
iH ₄ is 1 SCCM, H ₂ is 10 SCCM, the reaction pressure is 50 Pa, and the RF power is 100 W.

In this embodiment, PH ₃ is added
This is for changing the conductivity of the film (243) to control the non-linear characteristics, and is effective when added at a ratio of 30% by volume or less. As a method of controlling the non-linearity, there is a method of adding thermal annealing. This is because of the MIM type device
(243) a thin film corresponding to the (insulator) part
The hydrogen content in the film is controlled by measuring the dehydrogenation of the MIM, thereby controlling the nonlinearity of the MIM element. In the present embodiment, the processing conditions of this thermal annealing are as follows: temperature is 380 ° C., pressure is 100 Pa, processing atmosphere is Ar,
The processing time was 1 hour.

In the present invention, the Si _X C
_Y (X + Y = 1)
By setting the thickness of 3) to 2000 ° or less, preferably 1000 ° or less, the light transmittance was able to be increased. FIG. 10 shows the Si _X C _Y (X +
The spectral transmittance at 1000 ° of a thin film containing the composition represented by Y = 1) is shown.

Conventionally, an insulator of the MIM type element is used.
An insulating material such as TaO5 (tantalum pentoxide)
When a film is to be used, its light transmittance becomes a problem. Therefore, there were process restrictions such as reducing the area as much as possible. However, when a thin film having such a high light transmittance is used, FIG. As shown, the aperture ratio can be increased without having to pattern the element. After that, ITO is again applied on the film (243) by 1000 Å by DC sputtering.
Forming a second electrode (244) by photolithography;
I got In this case, a magnetron type RF sputtering method may be used.

The size of one of the pixel electrodes is a square having a side of 250 μm, and the gap between the pixels is 25 μm.
μm. The electrode (244) of this pixel has a size to be a unit pixel at the time of display, and has a thin film (24).
The electric field applied to 3) acts so as to be uniform in each pixel. Thus, a substrate (245) was obtained.

Having ultraviolet curing properties on the substrate;
A resin in which 60% by weight of cholesteric liquid crystal was dispersed in an epoxy-modified acrylic resin was applied using a spin method. The conditions at that time were 3500 rpm for 60 seconds. After leveling, an energy of 1000 mJ was applied by a high-pressure mercury lamp having an emission wavelength centered at 236 nm to cure the resin and form a liquid crystal dispersed resin layer (246) having a thickness of 12 μm.

Thereafter, the direct current sputtering method is used to
Was formed into a film having a thickness of 1200 °, and then patterned by a photolithography method to form a second electrode (247).

Thereafter, a light-transmitting silicone resin is printed by a screen method, and after preliminarily firing at 50 ° C. for 30 minutes, main firing is performed at 120 ° C. for 30 minutes to form a 50 μm protective film (248). Then, a TAB-shaped drive IC was connected to the leads on the substrate to obtain a reflective liquid crystal electro-optical device.

In the above embodiments, other coating methods can be employed as needed for coating the light control layer. In that case, it can be appropriately selected according to the components, viscosity and characteristics of the solution to be used. In the present invention, what can be used as the substrate is not limited to glass and engineering plastics, but can be widely applied as long as it can support a thin-film electrode and a light control layer such as an organic film and paper.

[0067]

As compared with the conventional manufacturing method, since the printing method or the spin method is used, a vacuum device is not required, and the process cost can be reduced.

Further, since no vacuum apparatus was used, variation between steps and in-plane variation could be eliminated without changing the composition ratio of the liquid crystal composition.

Further, since only one substrate is required, a light and thin liquid crystal electro-optical device can be realized at low cost.

[0070] without using a polarizing plate, an alignment film without the need,
Since the liquid crystal electro-optic effect can be realized with only one substrate,
A very bright liquid crystal electro-optical device was realized.

[Brief description of the drawings]

FIG. 1 is a schematic view of a manufacturing process of a liquid crystal electro-optical device of the present invention.

FIG. 2 is a structural diagram of a TN liquid crystal display device.

FIG. 3 shows a method of injecting a liquid crystal composition according to a conventional example.

FIG. 4 is a matrix circuit diagram of an inverter type complementary thin film transistor according to the present embodiment.

FIG. 5 is a device layout diagram according to the present embodiment.

FIG. 6 shows a drive signal according to the embodiment.

FIG. 7 is a method for manufacturing a liquid crystal display device according to the present embodiment.

FIG. 8 is a sectional view of the liquid crystal display device according to the present embodiment.

FIG. 9 is a sectional view of the liquid crystal display device according to the present embodiment.

FIG. 10 shows the spectral transmittance of the SiC film according to the present embodiment.

[Explanation of symbols]

 100: substrate 101: first electrode 103: dimming layer 104: second electrode

 ──────────────────────────────────────────────────続 き Continuation of the front page Judge of the Joint Panel Judge Yoshimi Takahashi Judge Shujiro Yokobayashi Judge Hideo Kawahara (56) References JP-A-62-39821 (JP, A) JP-A-1-259320 (JP, A) JP-A-2-96714 (JP, A) JP-T-58-501631 (JP, A)

Claims (2)

(57) [Claims] To 1. A substrate, forming an active element and a first electrode, the active element and the first electrode, forming a light modulating layer and a liquid crystal and an organic transparent material, and the dimming features on the layer, the indium tin oxide film of the low-grade oxide formed by sputtering, patterning the indium tin oxide film on the second electrode, after the patterning, to carry out thermal oxidation treatment Liquid crystal electro-optical device manufacturing method. 2. The method according to claim 1, wherein the insulating material has a thickness of 2000 .ANG.
ix Cy (x + y = 1) , forming a MIM element and electrodes in a matrix, providing a dimming layer having a liquid crystal and an organic transparent material on the substrate, Forming an electrode layer; and patterning the electrode layer.