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JP3003179B2 - Joining method of glass ceramic substrate and metal - Google Patents
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JP3003179B2 - Joining method of glass ceramic substrate and metal - Google Patents

Joining method of glass ceramic substrate and metal

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Publication number
JP3003179B2
JP3003179B2 JP2212164A JP21216490A JP3003179B2 JP 3003179 B2 JP3003179 B2 JP 3003179B2 JP 2212164 A JP2212164 A JP 2212164A JP 21216490 A JP21216490 A JP 21216490A JP 3003179 B2 JP3003179 B2 JP 3003179B2
Authority
JP
Japan
Prior art keywords
ceramic substrate
glass ceramic
brazing material
metal
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2212164A
Other languages
Japanese (ja)
Other versions
JPH0497965A (en
Inventor
博三 横山
峰春 塚田
孝司 表
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
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Priority to JP2212164A priority Critical patent/JP3003179B2/en
Publication of JPH0497965A publication Critical patent/JPH0497965A/en
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Description

【発明の詳細な説明】 〔概要〕 ガラスセラミック基板と金属との接合方法に関し、 ガラスセラミック基板と金属との密着性を向上するこ
とを目的とし、 メタライズを施したガラスセラミック基板と金属板と
の接合に際し、融点の異なる二層のろう材を用い、融点
な高いろう材をガラスセラミック基板側に、また融点の
低いろう材を金属側に位置決めし、荷重焼成して一体化
することを特徴としてガラスセラミック基板と金属との
接合方法を構成する。
DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method for joining a glass ceramic substrate and a metal, and aims at improving the adhesion between the glass ceramic substrate and the metal. At the time of joining, two layers of brazing material with different melting points are used, and the high melting point brazing material is positioned on the glass ceramic substrate side, and the low melting point brazing material is positioned on the metal side, and then fired under load and integrated. A method for joining a glass ceramic substrate and a metal is configured.

〔産業上の利用分野〕[Industrial applications]

本発明はガラスセラミックスよりなる多層回路基板と
金属板との接合方法に関する。
The present invention relates to a method for joining a multilayer circuit board made of glass ceramic and a metal plate.

大量の情報を迅速に処理する必要から光通信が広く行
われるようになった。
Optical communication has been widely used due to the need to process a large amount of information quickly.

こゝで光通信の特徴は信号の多重化と共に高速伝送が
可能なことである。
The feature of the optical communication is that high-speed transmission is possible together with signal multiplexing.

そこで、LSIやVLSIなどの半導体素子は信号の高速化
に適するように素子構成がなされている。
Therefore, semiconductor elements such as LSI and VLSI are configured to be suitable for high-speed signals.

また、これを搭載する回路基板は低損失で熱伝導性が
良く、また電子回路は電気抵抗の少ない金属材料を用い
てパターン形成することが必要である。
In addition, a circuit board on which this is mounted has low loss and good thermal conductivity, and an electronic circuit needs to be patterned using a metal material having low electric resistance.

〔従来の技術〕[Conventional technology]

発明者等はこの問題を解決するために基板材料として
ガラスセラミックスを用い、電子回路を銅(Cu)を用い
て形成した新しい構造のガラスセラミック基板を提案し
ている。
The present inventors have proposed a glass ceramic substrate having a new structure in which glass ceramic is used as a substrate material and an electronic circuit is formed using copper (Cu) in order to solve this problem.

(特願平1−553138,特願平1−559118など) 発明者等は伝送損失が少なく、高周波特性の優れた多
層セラミック回路基板を実用化するためには、 導体パターンの構成材料として抵抗率の少ないCuを
使用できること、 基板材料は誘電率が小さく、高周波特性が優れてい
ること、 基板の放熱性が優れていること、 などの条件を満たす材料として硼珪酸ガラスとアルミナ
とからなる複合誘電体を選んだ。
In order to put into practical use a multilayer ceramic circuit board having low transmission loss and excellent high-frequency characteristics, the inventors of the present invention have to use resistivity as a constituent material of a conductor pattern. A composite dielectric consisting of borosilicate glass and alumina as a material that satisfies such conditions as being able to use Cu with a low content, having a low dielectric constant, excellent high-frequency characteristics, and excellent heat dissipation of the substrate. I chose the body.

また、 半導体素子と多層セラミック回路基板とのワイヤボ
ンディングの配線距離を短くすると、 半導体素子の放熱性を良くすること、 などの条件を満たす構造として第2図(A)および
(B)に示す構造を提案している。
In addition, the structure shown in FIGS. 2A and 2B satisfies such conditions as shortening the wiring distance of wire bonding between the semiconductor element and the multilayer ceramic circuit board to improve the heat dissipation of the semiconductor element. Has been proposed.

すなわち、半導体素子1を搭載する領域2を窓開けし
てガラスセラミック基板3を作り、この窓開けした領域
2の底に熱伝導性の優れた窒化アルミニウム(AlN)基
板4を設置し、この上に半導体素子1を接着した後に半
導体素子1の周辺に設けられているパッドとガラスセラ
ミック基板3に設けられているパッドとワイヤボンディ
ングする構造である。
That is, an area 2 on which the semiconductor element 1 is mounted is opened to form a glass-ceramic substrate 3, and an aluminum nitride (AlN) substrate 4 having excellent thermal conductivity is placed at the bottom of the opened area 2. After bonding the semiconductor element 1 to the pad, the pad provided on the periphery of the semiconductor element 1 and the pad provided on the glass ceramic substrate 3 are wire-bonded.

このような構造をとるガラスセラミック基板3はアー
ス電位を基板の全域に亙って得るために金属パッケージ
に接合する必要がある。
The glass ceramic substrate 3 having such a structure needs to be bonded to a metal package in order to obtain a ground potential over the entire area of the substrate.

従来は、この方法として第3図に示すようにガラスセ
ラミック基板3の裏面にCuペーストなどの導体ペースト
を塗布して後、焼成するなどの方法でメタライズ層6を
形成し、低融点のろう材7を用いて金属パッケージ5に
接合する方法が採られていた。
Conventionally, as shown in FIG. 3, a metallized layer 6 is formed by applying a conductive paste such as a Cu paste to the back surface of the glass ceramic substrate 3 and then sintering it as shown in FIG. 7, a method of bonding to the metal package 5 has been adopted.

然し、ろう材7が溶けた場合、メタライズ層6にろう
材7が挿入することから体積膨張が生じ、またメタライ
ズ層6を構成するガラスの基板との接触面積が減少する
結果として接着強度が低下し、セラミック基板3が剥離
し易くなることが問題であった。
However, when the brazing material 7 is melted, the volume expansion occurs due to the insertion of the brazing material 7 into the metallized layer 6, and the contact area of the glass constituting the metallized layer 6 with the substrate is reduced, resulting in a decrease in the adhesive strength. However, there is a problem that the ceramic substrate 3 is easily peeled.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

半導体素子を搭載したガラスセラミック基板はアース
電位を基板の全域に亙って得るために金属パッケージに
接合する必要がある。
The glass-ceramic substrate on which the semiconductor element is mounted must be bonded to a metal package in order to obtain a ground potential over the entire area of the substrate.

この方法として金属パッケージとしてはガラスセラミ
ックスと熱膨張係数が近い金属からなるものを用い、融
点が約600℃の低融点ろう材を用いて接合を行ってい
た。
In this method, a metal package made of a metal having a thermal expansion coefficient close to that of glass ceramics was used, and bonding was performed using a low melting point brazing material having a melting point of about 600 ° C.

然し、接合に当たってろう材が溶ける際に、このろう
材がメタライズ層とガラスセラミック基板との接合部に
まで侵入して体積膨張を生じ、またバインダとして働い
ているガラスの接触面積を減少させる結果、密着強度が
低下して剥離を起こすと云う問題がある。
However, when the brazing material is melted during joining, the brazing material penetrates to the joint between the metallized layer and the glass ceramic substrate, causing volume expansion, and as a result, reducing the contact area of the glass serving as a binder, There is a problem that the adhesion strength is reduced to cause peeling.

そこで、この問題を解決することが課題である。 Therefore, it is an issue to solve this problem.

〔課題を解決するための手段〕[Means for solving the problem]

上記の課題は、メタライズを施したガラスセラミック
基板と金属板とを、融点の異なる二層のろう材用いて接
合する接合方法において、該二層のろう材の融点の差が
10〜50℃であって、融点の高い鑞材をガラスセラミック
基板側に、また融点の低いろう材を金属側に位置決め
し、融点の低いよう材は溶融し、一方、融点の高いろう
材は溶融しないろう付け温度において荷重焼成して一体
化するガラスセラミック基板と金属の接合方法により解
決することが可能になる。
The above problem is caused by a joining method of joining a metallized glass-ceramic substrate and a metal plate using two layers of brazing materials having different melting points.
A brazing material with a high melting point at 10-50 ° C is positioned on the glass ceramic substrate side, and a brazing material with a low melting point is positioned on the metal side. The problem can be solved by a method of joining a metal and a glass ceramic substrate which is integrated by firing under load at a brazing temperature at which the metal does not melt.

〔作用〕[Action]

従来の構成におて剥離が起き易いのは溶融したろう材
がメタライズ層に侵入するためであることから、発明者
等は侵入を阻止し、ろう材の成分をメタライズ層に拡散
させて密着させることで解決できると考えた。
In the conventional configuration, peeling is likely to occur because the molten brazing material invades the metallized layer, so the inventors prevent the intrusion and diffuse the components of the brazing material into the metallized layer to make them adhere to each other. I thought it could be solved.

第1図は本発明の原理図であって、融点は異なるが成
分が近似している二つのろう材を一体化して用い、ガラ
スセラミック基板3のメタライズ層6の側にはろう付け
温度においては溶融しない融点の高いろう材9を用い、
また金属パッケージ5の側にはろう付け温度において溶
融する融点の低いろう材10を使用するものである。
FIG. 1 is a principle view of the present invention, in which two brazing materials having different melting points but similar components are used integrally, and the brazing temperature is set on the side of the metallized layer 6 of the glass ceramic substrate 3 at the brazing temperature. Using a high melting point brazing material 9 that does not melt,
On the side of the metal package 5, a brazing material 10 having a low melting point that is melted at a brazing temperature is used.

そして、ろう付け温度において融点の低いろう材10は
溶融し、一方、融点の高いろう材9は溶融しないことが
必要で、実験の結果、融点の異なる二層のろう材の融点
の差は10〜50℃が適当であることが判った。
At the brazing temperature, the brazing material 10 having a low melting point must be melted, while the brazing material 9 having a high melting point must not be melted. 5050 ° C. has been found to be suitable.

そして、金属パッケージ5の上に重し11を置き、不活
性雰囲気中で予め設定したろう付け温度で加熱すればよ
い。
Then, the weight 11 is placed on the metal package 5 and heated at a preset brazing temperature in an inert atmosphere.

このようにすれば、融点の高いろう材9はメタライズ
層に拡散して密着し、また金属パッケージ5は融点の低
いろう材10を介して融点の高いろう材9と融点密着する
ので、強固な接合が可能となる。
In this way, the brazing material 9 having a high melting point diffuses and adheres to the metallized layer, and the metal package 5 adheres to the brazing material 9 having a high melting point via the brazing material 10 having a low melting point. Joining becomes possible.

〔実施例〕〔Example〕

融点の異なる二層のろう材を構成するためにデグサ社
製の次の4種類のろう材を使用した。
The following four types of brazing materials manufactured by Degussa were used to form two layers of brazing materials having different melting points.

実施例1:(融点差30℃の場合) 組成比が硼珪酸ガラス50重量%,アルミナ50重量%の
ガラスセラミック基板上にCuペースト(品番6001,デュ
ポン社)をスクリーン印刷し、乾燥した後、N2雰囲気中
で600℃で10分焼成してメタライズ層を作った。
Example 1: (When the melting point difference is 30 ° C.) A Cu paste (product number 6001, DuPont) is screen-printed on a glass ceramic substrate having a composition ratio of 50% by weight of borosilicate glass and 50% by weight of alumina, and dried. The metallized layer was formed by firing at 600 ° C. for 10 minutes in an N 2 atmosphere.

このメタライズ層の上に厚さが0.1mmのよう材Aとろ
う材Bとを載せ、この上に金(Au)メッキを施した鉄・
ニッケル合金(Ni:Fe=4:58)よりなるパッケージを置
き、この上に100gの重しを載せてN2雰囲気中で680℃で
5分間亙って熱処理し、ガラスセラミック基板とパッケ
ージとを接合した。
A material A and a brazing material B having a thickness of 0.1 mm are placed on this metallized layer, and gold (Au) plated iron /
A package made of a nickel alloy (Ni: Fe = 4: 58) is placed, and a 100 g weight is placed thereon and heat-treated at 680 ° C. for 5 minutes in an N 2 atmosphere to separate the glass ceramic substrate and the package. Joined.

こゝで、焼成温度として640℃より高い680℃をとる理
由はガラスセラミック基板の熱容量によるもので、5分
間の焼成では基板温度は640℃には達しないことによ
る。
The reason why the firing temperature is set to 680 ° C. higher than 640 ° C. is due to the heat capacity of the glass ceramic substrate, and the substrate temperature does not reach 640 ° C. after firing for 5 minutes.

この密着強度は測定の結果20MPaであり、従来の一層
ろう材を用いたものゝ密着密度が6MPaであるのに較べ充
分な値を得ることができた。
As a result of the measurement, the adhesion strength was 20 MPa, which was a sufficient value as compared with the case where a conventional brazing material was used / the adhesion density was 6 MPa.

実施例2:(融点差50℃の場合) 実施例1と全く同様にしてガラスセラミック基板の上
にCuのメタライズ層を形成した。
Example 2: (Case where melting point difference is 50 ° C) A metallized layer of Cu was formed on a glass ceramic substrate in exactly the same manner as in Example 1.

このメタライズ層の上に厚さが0.1mmのろう材Dとろ
う材Cとを載せ、この上に金(Au)メッキを施した鉄・
ニッケル合金(Ni:Fe=42:58)よりなるパッケージを置
き、この上に100gの重しを載せてN2雰囲気中で790℃で
5分間に亙って熱処理し、ガラスセラミック基板とパッ
ケージとを接合した。
A 0.1 mm thick brazing material D and a brazing material C are placed on this metallized layer, and gold (Au) plated iron
A package made of a nickel alloy (Ni: Fe = 42: 58) was placed, and a 100 g weight was placed thereon and heat-treated at 790 ° C. for 5 minutes in an N 2 atmosphere to form a glass ceramic substrate and a package. Was joined.

この密着強度は測定の結果20MPaであり、従来の一層
ろう材を用いたものゝ密着密度が6MPaであるのに較べ優
れた結果を得ることができた。
This adhesion strength was 20 MPa as a result of the measurement, and excellent results were obtained as compared with the case where a conventional brazing material was used and the adhesion density was 6 MPa.

実施例3:(融点差70℃の場合) 実施例1と全く同様にしてガラスセラミック基板の上
にCuのメタライズ層を形成した。
Example 3 (in the case of a melting point difference of 70 ° C.) A metallized layer of Cu was formed on a glass ceramic substrate in exactly the same manner as in Example 1.

このメタライズ層の上に厚さが0.1mmのろう材Cとろ
う材Aとを載せ、この上に金(Au)メッキを施した鉄・
ニッケル合金(Ni:Fe=42:58)よりなるパッケージを置
き、この上に100gの重しを載せてN2雰囲気中で710℃で
5分間に亙って熱処理し、ガラスセラミック基板とパッ
ケージとを接合した。
A 0.1 mm thick brazing material C and a brazing material A are placed on this metallized layer, and gold (Au) plated iron
A package made of a nickel alloy (Ni: Fe = 42: 58) was placed, and a 100 g weight was placed thereon and heat-treated at 710 ° C. for 5 minutes in an N 2 atmosphere to form a glass ceramic substrate and a package. Was joined.

この密度強度は測定の結果15MPaであり、従来の一層
ろう材を用いたものゝ密着密度が6MPaであるのに較べ優
れた結果を得ることができた。
As a result of the measurement, the density strength was 15 MPa, and an excellent result could be obtained as compared with the case where the conventional brazing material was used and the adhesion density was 6 MPa.

比較例1:(融点差30℃,但し配置が逆) 実施例1と全く同様にしてガラスセラミック基板の上
にCuのメタライズ層を形成した。
Comparative Example 1: (Melting point difference: 30 ° C., but arrangement is reversed) A metallized layer of Cu was formed on a glass ceramic substrate in exactly the same manner as in Example 1.

このメタライズ層の上に厚さが0.1mmのろう材Bとろ
う材Aとを載せ、この上に金(Au)メッキを施した鉄・
ニッケル合金(Ni:Fe=42:58)よりなるパッケージを置
き、この上に100gの重しを載せてN2雰囲気中で680℃で
5分間に亙って熱処理し、ガラスセラミック基板とパッ
ケージとを接合した。
A 0.1 mm thick brazing material B and a brazing material A are placed on this metallized layer, and gold (Au) plated iron
A package made of a nickel alloy (Ni: Fe = 42: 58) was placed, and a 100 g weight was placed thereon and heat-treated at 680 ° C. for 5 minutes in an N 2 atmosphere to form a glass ceramic substrate and a package. Was joined.

この密着強度は測定の結果6MPaであり、従来の一層ろ
う材を用いたものと同じ値で不良であった。
As a result of the measurement, the adhesion strength was 6 MPa, which was the same value as that obtained by using the conventional brazing filler metal and was poor.

比較例2:(融点差150℃,但し配置が逆) 実施例1と全く同様にしてガラスセラミック基板の上
にCuのメタライズ層を形成した。
Comparative Example 2: (Melting point difference 150 ° C., but arrangement is reversed) A metallized layer of Cu was formed on a glass ceramic substrate in exactly the same manner as in Example 1.

このメタライズ層の上に厚さが0.1mmのろう材Bとろ
う材Dとを載せ、この上に金(Au)メッキを施した鉄・
ニッケル合金(Ni:Fe=42:58)よりなるパッケージを置
き、この上に100gの重しを載せてN2雰囲気中で830℃で
5分間に亙って熱処理し、ガラスセラミック基板とパッ
ケージとを接合した。
A 0.1 mm thick brazing material B and a brazing material D are placed on this metallized layer, and gold (Au) plated iron
A package made of a nickel alloy (Ni: Fe = 42: 58) is placed, and a 100 g weight is placed thereon and heat-treated at 830 ° C. for 5 minutes in an N 2 atmosphere to form a glass ceramic substrate and a package. Was joined.

この密着強度は測定の結果1MPaであり、従来の一層ろ
う材を用いたものより劣っていた。
The adhesion strength was 1 MPa as a result of the measurement, which was inferior to that using a conventional brazing filler metal.

〔発明の効果〕〔The invention's effect〕

以上記したように本発明の実施により、ガラスセラミ
ック基板を金属パッケージに接着する場合に剥離を生じ
ないのは勿論、従来に較べて強固な接合を得ることがで
きる。
As described above, according to the embodiment of the present invention, when the glass ceramic substrate is bonded to the metal package, not only does not occur separation, but also a stronger bond can be obtained as compared with the related art.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の実施法を示す原理図、 第2図は発明者等が提案している基板構造(A)と半導
体素子の装着方法を示す断面図(B) 第3図は金属パッケージとの接合を示す断面図、 である。 図において、 1は半導体素子、2は領域、 3はガラスセラミック基板、 5は金属パッケージ、6はメタライズ層、 9は融点の高いろう材、10は融点の低いろう材、 である。
FIG. 1 is a principle view showing an embodiment of the present invention, FIG. 2 is a cross-sectional view showing a substrate structure (A) proposed by the inventors and a mounting method of a semiconductor element (B), and FIG. 3 is a metal package. FIG. In the figure, 1 is a semiconductor element, 2 is a region, 3 is a glass ceramic substrate, 5 is a metal package, 6 is a metallized layer, 9 is a brazing material having a high melting point, and 10 is a brazing material having a low melting point.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−194879(JP,A) (58)調査した分野(Int.Cl.7,DB名) C04B 37/00 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-194879 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C04B 37/00

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】メタライズを施したガラスセラミック基板
と金属板とを、融点の異なる二層のろう材用いて接合す
る接合方法において、該二層のろう材の融点の差が10〜
50℃であって、融点の高い鑞材をガラスセラミック基板
側に、また融点の低いろう材を金属側に位置決めし、融
点の低いろう材は溶融し、一方、融点の高いろう材は溶
融しないよう付け温度において荷重焼成して一体化する
ことを特徴とするガラスセラミック基板と金属との接合
方法。
1. A joining method for joining a metallized glass ceramic substrate and a metal plate using two layers of brazing materials having different melting points, wherein the difference in melting points between the two layers of brazing materials is 10 to 10 mm.
At 50 ° C, the high melting point brazing material is positioned on the glass ceramic substrate side and the low melting point brazing material is positioned on the metal side, the low melting point brazing material melts, while the high melting point brazing material does not melt A method for bonding a glass ceramic substrate and a metal, wherein the glass ceramic substrate and the metal are integrated by firing under load at a welding temperature.
JP2212164A 1990-08-11 1990-08-11 Joining method of glass ceramic substrate and metal Expired - Lifetime JP3003179B2 (en)

Priority Applications (1)

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JP2212164A JP3003179B2 (en) 1990-08-11 1990-08-11 Joining method of glass ceramic substrate and metal

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Application Number Priority Date Filing Date Title
JP2212164A JP3003179B2 (en) 1990-08-11 1990-08-11 Joining method of glass ceramic substrate and metal

Publications (2)

Publication Number Publication Date
JPH0497965A JPH0497965A (en) 1992-03-30
JP3003179B2 true JP3003179B2 (en) 2000-01-24

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Country Link
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0907215B1 (en) * 1997-10-02 2002-01-02 Siemens Aktiengesellschaft Sealing a high temperature fuel cell of a high temperature fuel cell stack

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