JP3008576B2 - Film carrier - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film carrier, and more particularly, to a structure of a film carrier for mounting a semiconductor device formed by a TAB method on a substrate in an upright posture.

[0002]

2. Description of the Related Art The TAB method, which is known as a method for manufacturing semiconductor devices, involves bonding a semiconductor chip (hereinafter simply referred to as a chip) to a film carrier made of a synthetic resin film and then punching a lead with a punching device. It has become.

FIG. 6 is a top view of a film carrier used in the conventional TAB method. This film carrier 1
Numeral 01 is formed of a synthetic resin film, and a square opening 102 is formed at its center NA. Thin leads 103 are formed on both sides of the opening 102 by copper etching means. 104
Is a support ring for supporting the lead 103, and 105 is a pin hole for transporting the film carrier 101 by a sprocket.

[0004] The film carrier 101 includes a chip 1
After bonding 00 to the lead 103, the lead 103 is punched out along a broken line a by a punching device.

FIG. 7 shows a state in which a semiconductor device P ′ obtained by punching a lead 103 is bonded to a substrate 110. The device P ′ is adsorbed to the nozzle 112 of the pickup head 111, and is bonded by pressing the tip of the lead 103 on the electrode 113 formed on the upper surface of the substrate 110 and pressing the electrode 113 with the pressing element 114. . Instead of this pressing element 114,
A method of bonding the lead 103 to the electrode 113 by irradiating the tip of the lead 103 with laser light is also known.

[0006]

However, since the device P 'has a very large width L', it requires a large bonding area and cannot be mounted on the substrate 110 at high density.

Accordingly, an object of the present invention is to provide a means capable of reducing the bonding area and mounting it on a substrate at a high density.

[0008]

For this purpose, the present invention forms a first opening for bonding a chip to a synthetic resin film, and leads outwardly from both sides of the first opening. To extend straight and straight ,
A second opening for making one lead longer than the lateral width of the chip and partially exposing the lead;
And a third opening formed on both sides of the first opening.
And the second opening and the third opening are connected to the
Bend line when mounting the
It is those that.

[0009]

According to the above construction, the film carrier is folded in each direction.
By bending the semiconductor device along the bending line, the semiconductor device is bonded to the substrate in an upright posture. Therefore, the area required for bonding is extremely small , and the semiconductor device can be mounted on the substrate at a high density.

In this case, since the device is bonded to the substrate in an upright posture, the area required for bonding is extremely small, and the device can be mounted on the substrate at a high density.

[0011]

(Embodiment 1) Next, an embodiment of the present invention will be described with reference to the drawings.

FIG. 1A is a top view of a film carrier.
FIG. 1B is a bottom view. This film carrier 1
Is formed of a synthetic resin film, and pin holes 2 for pitch feeding with a sprocket are formed at both end portions thereof.

NA is the bisector of the film carrier 1. The offset position on one side end portion of the film carrier 1 than this bisector NA, the first opening 3 of the quadrangle for bonding chip 10 is formed. Also between the side edge of the bisector NA and the other, Li
An elongated second opening 4 and a third opening 5 for partially exposing a card 9 (described later) are formed.
As will be described in detail later, the film carrier 1, dashed line
Bending lines and lines on both sides in the first opening 3 shown by a and c.
And the second opening 4 and the third opening indicated by broken lines d and b, respectively.
The opening 5 is bent along the center bending line .
In the figure, reference numerals 1a, 1b, 1c, 1d, 1e, and 1f denote parts of the film carrier 1.

A large number of leads 8 are formed from one side end of the opening 3 to one side end of the film carrier 1. The lead 9 extends from the other side end of the opening 3 toward the other side end of the film carrier 1.
However, many of them extend straight and straight . The leads 8, 9 are formed by copper etching means. The length D1 of one of the leads 9 is considerably longer than the width D2 of the chip 10. The chip 10 is bonded to leads 8 and 9 projecting into the opening 3.

FIG. 2 shows the punching of the film carrier 1.
2 shows a process of bonding to a substrate 11. The film carrier 1 is pitch-fed by a sprocket 12 while the first punching device 21 and the second punching device 3
First, punching is performed by a third punching device 41. The semiconductor device P obtained by punching the film carrier 1
Is picked up by being attracted to the nozzle 14 of the pickup head 13 and bonded to the substrate 11. Next, a more detailed description will be given with reference to FIG.

First, a punching device 21 shown in FIG.
As a result, the film carrier 1 is punched along the lines A and B shown in FIG. 3 (a-1), and is bent along the broken lines a and b. 22 is a holding block, 23 is an upper blade, and 24 is a lower blade. 1a and 1f are both ends of the punched film carrier 1.

Next, the film carrier 1 is punched along the lines C and D shown in FIG. 3 (b-1) by the punching device 31 shown in FIG. 3 (b-2). 32 is an upper blade and 33 is a lower blade.

Next, a punching device 41 shown in FIG.
As a result, punching is performed along lines E and F shown in FIG. 3 (c-1), and bending is performed along broken lines c and d sandwiching the center NA. 42 is an upper mold and 43 is a lower mold. In this case, the film carrier 1 is bent in an inverted U-shape while the central portion 1c is pushed up by the projections 44 provided on the lower mold 43, and the chip 10 stands up.

Since the film carrier 1 is formed of a synthetic resin, it is difficult to bend. Therefore, in this means, in addition to the opening 3, the openings 4, 5 are specially formed, and the leads 8, 9 exposed in these openings 3, 4, 5 are bent along broken lines a to d. I have to.

When the device P is formed in this manner, the upper die 42 is retracted upward, the device P is sucked and picked up by the nozzle 14 of the pickup head 13, and bonded to the substrate 11. FIG. 4 shows a state of bonding. As shown, the chip 10 is upright, and the leads 8, 9 are bent in an inverted U-shape. The nozzle 14 sucks the central portion 1c of the film carrier 1. That is, since the width of the lead 9 is extremely small, it cannot be sucked by the nozzle 14.
Therefore, the central portion 1c is left particularly, and the central portion 1c is attracted to the nozzle 14 to pick up the device P. Then, the pressing element 15 is pressed against the leads 8 and 9 to bond the leads 8 and 9 to the electrodes 12 on the substrate 11.

As shown in FIG. 4, the device P is bonded to the substrate 11 in an upright posture. Therefore, the width L of the device P is extremely small, and the device P can be mounted on the substrate 11 at a high density.

(Embodiment 2) In FIG. 5, the opening 3 is formed on the bisector NA of the film carrier 1.
Leads 8 and 9 are formed on both sides of the opening 3, and the length D1 of one of the leads 9 is considerably longer than the width D2 of the chip 10. Therefore, this can also be bonded to the substrate 11 in an upright posture as in the above embodiment.

[0023]

According to the present invention as described above, according to the present invention, the
Along both sides in the first opening and the second and third openings
By bending Te, since it bonded to the substrate in a posture standing upright semiconductor devices made by a TAB method, the narrow-pitch close to each other a plurality of semiconductor devices
And can be mounted on the board at high density.

[Brief description of the drawings]

FIG. 1A is a top view of a film carrier according to the present invention. FIG. 1B is a bottom view of a film carrier according to the present invention.

FIG. 2 is an explanatory view of a punching process according to the present invention.

FIG. 3 is an explanatory view of a punching process according to the present invention.

FIG. 4 is a front view during bonding according to the present invention.

FIG. 5 is a top view of a film carrier according to another embodiment of the present invention.

FIG. 6 is a top view of a conventional film carrier.

FIG. 7 is a front view of the conventional means during bonding.

[Explanation of symbols]

Reference Signs List 1 film carrier 2 chip 3 first opening 4 second opening 5 third opening 8 lead 9 lead a, b, c, d bending line NA center

Claims (1)

(57) [Claims] A first opening for bonding a chip to a synthetic resin film is formed, and leads are straightened outward from both sides of the first opening outward.
And the length of one of the leads is longer than the lateral width of the chip , and the leads are partially exposed.
A second opening and a third opening are formed, and the first opening is formed.
Both sides of the portion, the second opening and the third opening
When mounting the chip on a board in the upright position.
A film carrier characterized by a bent line .