JP3029702B2 - AlN substrate - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an AlN substrate used for a thin film circuit board or the like.

[0002]

2. Description of the Related Art Conventionally, alumina has been mainly used as a substrate of a thin-film wiring mounting module. However, the amount of heat generated during operation of the active element tends to increase with the improvement in performance, and the thermal conductivity of alumina is limited by the number of mounted active elements. For this reason, the mounting density of the module becomes low due to thermal reasons.

For this reason, attempts have been made to use BeO, which has a high thermal conductivity, as a substrate material instead of alumina, but BeO has a limited range of application as a substrate due to toxicity during processing and polishing. You.

AlN has recently been used as an alternative to BeO having such problems. AlN is non-toxic, and has achieved a thermal conductivity higher than that of BeO by reducing the concentration of oxygen contained therein and developing a sintering aid that promotes densification. For this reason, the application of AlN to a thin film circuit board has begun gradually, and wiring of a thin film conductor is being embodied as a high-density mounting board utilizing high thermal conductivity. As such, on an AlN substrate, T
i / Ni / Au, Ti / Pt / Au, Cr / Cu / A
There is a circuit board formed with u or TiN / Ni / Au. However, such a circuit board has a drawback that a wiring layer formed by the thin film conductor is peeled off or disconnected from the surface of the substrate due to insufficient adhesion strength between the thin film conductor and the AlN substrate. Further, since the etching rate of AlN differs depending on the crystal orientation, a step occurs at the grain boundary having a different crystal orientation in the AlN substrate. As a result, if the adhesion strength between the thin film conductor and the base is insufficient, the wiring layer has a problem of disconnection on a step, resulting in insufficient reliability. For this reason, a circuit board capable of stably forming a thin film conductor on an AlN substrate with good adhesion is desired.

[0005]

SUMMARY OF THE INVENTION The present invention has been made to solve such problems of the prior art, and has a high adhesion strength between an AlN substrate and a thin-film conductor and a high reliability. It is an object of the present invention to provide an AlN substrate.

[0006]

The AlN substrate according to the first invention is provided on an AlN substrate and provided on the substrate.
At least one element M1 selected from Ti, Cr, Ta, Zr, and Hf, and Al and N are converted to Al _x M
1 _100-x : M1: M1 _y N _100-y = u: v: w (where x and y indicate atomic%, u, v and w indicate molecular%, and u +
v + w = 100, 25 ≦ x ≦ 90, 40 ≦ y ≦ 70, 40
≤ u ≤ 98, 0.2 ≤ v ≤ 40, and 1 ≤ w ≤ 40) and a metal / nitride layer containing the M1 laminated on the metal / nitride layer. Bonding layer, and W, Nb, Ta, Mo, Ni, P laminated on the bonding layer
a barrier layer mainly composed of at least one selected from t, Pd, and NiCr;
and a thin-film conductor layer mainly composed of at least one of u, Cu, and Al, and a component having a metal surface is bonded to a predetermined position of the thin-film conductor layer.

Further, the AlN substrate according to the second invention is characterized in that
and lN substrate, provided on said substrate, Al and N Al _t
A nitrogen / aluminum layer containing N _100-t (where t represents atomic% and in the range of 50 <t <100), and Ti, C laminated on the nitrogen / aluminum layer.
At least one element M1 and Al selected from r, Ta, Zr, and Hf are represented by Al _{x '} M1 _100-x' (where x 'represents atomic% and in the range of 10 ≦ x ′ ≦ 90) A metal layer containing so as to have a ratio of, and laminated on the metal layer,
A bonding layer containing the M1, a barrier layer laminated on the bonding layer and mainly composed of at least one selected from W, Nb, Ta, Mo, Ni, Pt, Pd, and NiCr; A thin film conductor layer mainly composed of at least one of Au, Cu, and Al laminated on the layer, and a component having a metal surface is bonded to a predetermined position of the thin film conductor layer.

The AlN substrate used in the present invention is a sintered body with an appropriate sintering aid, if necessary, and preferably has an oxygen content of 0.005 to 10 atomic%. This is because if the oxygen content in the substrate is less than 0.005 atomic%, it is difficult to sufficiently increase the adhesion strength of the metal / nitride layer, while if it exceeds 10 atomic%, the thermal conductivity of the AlN substrate is lower than that of alumina. This is because the value may be reduced to a similar value and the advantage of high thermal conductivity may be lost. On the AlN substrate in the first invention, a metal / nitride layer, a bonding layer, a barrier layer, and a thin-film conductor layer, which will be described in detail below, are provided.

The metal / nitride layer covers the AlN substrate and functions as a layer for bonding the bonding layer to the substrate. The metal / nitride layer is a layer composed of the element represented by M1 and Al and M, and has a constant composition of Al-M
One alloy, M1 and a nitride of M1 are contained at a predetermined ratio. In this layer, the metal component and the nitride may have a concentration gradient in the film thickness direction, and the base side may be rich in the metal component and the bonding layer side may be rich in the nitride. Al, N, and M1, which are components of this layer, have an effect of improving the adhesion strength between the AlN substrate and the bonding layer mainly composed of M1.
N further has the effect of matching the lattice constant between the AlN substrate and the bonding layer, and the effect of reducing the coefficient of thermal expansion.

The metal / nitride layers are represented by M1, Al, N and A
l _x M1 _100-x : M1: M1 _y N _100-y = u: v: w
(Where x, y, and v indicate atomic%, u and w indicate molecular%, u + v + w = 100, and 25 ≦ x ≦ 90 and 40 ≦ y, respectively)
≤ 70, 40 ≤ u ≤ 98, 0.2 ≤ v ≤ 40, and 1 ≤ w ≤ 40). The type of M1,
The reason why the ratio of each constituent element and component is limited to this range will be described below.

[0011] The Al in Al _x M1 _100-x 25 atomic%
If the amount is less than 90%, the amount of Al in the metal / nitride layer increases, and if the amount exceeds 90 atomic%, the amount of patterning, such as circuit formation, increases. When etching, the etching becomes insufficient, causing a decrease in resistance between wirings, a short circuit, and the like. Therefore, the amount of Al is 25-90.
Atomic%, preferably 30-85% by weight. Where Al
Exists as an alloy or compound with M1 in the metal / nitride layer.

M1 is an element selected from Ti, Cr, Ta, Zr, and Hf. These elements are nitrogen, Al
It is suitable for the formation of alloys and nitrides, and is suitable for fulfilling the function of this layer.

When M1 in M1 _y N _100-y is less than 40 atomic%, the nitrogen contained in the AlN substrate is gasified, causing swelling of the thin film. On the other hand, when it exceeds 70 atomic%, the amount of M1 nitride formed is small. Therefore, M1 in the bonding layer formed on this layer easily moves into this metal / nitride layer, and its concentration becomes excessive. As a result, the composition ratio of AlM1 deviates from the range of the present invention, and the adhesion strength between the AlN substrate and the thin film conductor layer cannot be sufficiently increased. For this reason, the amount of M1 is in the range of 40 to 70 atomic%, preferably 45 to 70 atomic%.
Atomic% range.

The AlM1, M1, and M constituting this layer
l is suitable for increasing the adhesion strength and stabilizing this layer.
If AlM1 is less than 40% by mole, the adhesion strength at high temperature is reduced, and the thin film and the AlN substrate are separated when brazing. On the other hand, if over 98% by mole, the internal stress at the interface becomes large. It is difficult to obtain a stable adhesion strength.
For this reason, the range of the molecular% (that is, the value of u) of AlM1 is 40 to 98, and more preferably 42 to 95. Also,
If M1N is less than 1 mol%, it is difficult to prevent the reaction between this layer and the bonding layer, and M1 forming the bonding layer destabilizes AlM1 and lowers the adhesive strength at high temperatures. On the other hand, when M1N exceeds 40% by mole, the internal stress of the metal / nitride layer increases, and it is difficult to stably obtain the adhesion strength. For this reason, the molecular% of M1N (that is, the value of w) is in the range of 1 to 40, more preferably 2 to 40.
It is in the range of 37. Further, when M1 is less than 0.2 atomic%, unreacted N gas at the time of forming the metal / nitride layer is gasified, causing blisters in the thin film. On the other hand, if M1 exceeds 40 atomic%, the adhesion strength at high temperatures decreases. For this reason, the atomic% of M1 (that is, the value of v) is in the range of 0.2 to 40, more preferably
It is in the range of 0.5 to 38.

The thickness of such a metal / nitride layer is 3 nm.
It is desirable to make the above. This means that the thickness of this layer is 3
If the thickness is less than nm, it is difficult to stably improve the adhesion strength between the AlN substrate and the thin film conductor layer. If this layer is too thick, it will take a long time to make the circuit board thinner and remove it by etching, and it will be difficult to set conditions such as pattern accuracy. A more preferable range of the thickness of the metal / nitride layer is 10 to 500 nm.

As described above, the bonding layer is made of Ti, Cr,
At least one element M1 selected from Ta, Zr, and Hf is mainly used. This bonding layer is made of metal
It has the effect of increasing the adhesion strength to the nitride layer. Further, even if the constituent elements of the barrier layer formed on the bonding layer are mixed with the elements of the bonding layer by intermixing or heat treatment during film formation, the effect on the adhesion strength is small.

Further, nitrogen or oxygen may be contained in the bonding layer. At this time, nitrogen or oxygen is forming a solid solution or a compound. In particular, when nitrogen is contained, it is also effective as a barrier for preventing mutual diffusion of M1 and the elements constituting the thin film conductor layer. As M1 and the N is M1 _Z N _100-z (although z is for the 1 ≦ z ≦ represent atomic% 40
).
Further, they may be uniformly contained or may have a slope.

The thickness of the bonding layer is preferably from 1 nm to 1 μm. This is because if the thickness is less than 1 nm, the bonding with the metal / nitride layer is insufficient and it is difficult to achieve high adhesion strength. On the other hand, if the thickness exceeds 1 μm, internal stress is caused. This is because the bonding layer, the barrier layer, and the conductor layer are easily peeled off. Preferred thickness is 3 to 900n
m, a more preferable thickness range is 10 to 500 nm.

As described above, the barrier layer is made of W, Nb,
The main component is at least one selected from Ta, Mo, Ni, Pt, Pd, and NiCr. This layer is composed of M1 forming the bonding layer and Au, C forming the conductor layer.
It has an action of preventing at least one of u and Al from mutually diffusing. The thickness of this barrier layer is 5 nm
It is preferably in the range of 5 to 5 μm. This is because if the thickness of the barrier layer is less than 5 nm, it is difficult to sufficiently achieve the above-mentioned barrier effect. On the other hand, if the thickness exceeds 5 μm, the layer and the conductor layer are separated due to internal stress of the layer, This is because the degree of side etching becomes large in the etching at the time of patterning, and it becomes difficult to form a highly reliable thin film conductor. A more preferable thickness range is 10 nm to 2 μm.

The thin film conductor layer is mainly composed of Au, Cu or Al, and its thickness is desirably 50 nm to 20 μm. If it is less than 50 nm, the wiring resistance increases,
The pattern becomes unsuitable for miniaturization of the pattern. On the other hand, if it exceeds 20 μm, peeling will occur due to internal stress. More preferably, the thickness is 70 nm to 15 μm. Thus, an AlN substrate including the AlN substrate, the metal / nitride layer, the bonding layer, the barrier layer, and the thin film conductor layer is formed.

On the AlN substrate of the second invention, a nitrogen / aluminum layer, a metal layer, a bonding layer, a barrier layer and a thin film conductor layer similar to those of the first invention are provided in detail. .

The aluminum / nitrogen layer is effective for improving the adhesion to the metal layer, and the atomic% of Al (that is, the value of t) is reduced.
If it is less than 50, the adhesion strength will not be improved, and if it is 100, the resistivity of the substrate surface will decrease, and it will not be possible to form a wiring pattern on the substrate. Therefore, the aluminum / nitrogen layer has an atomic ratio of 50%.
<T <100, more preferably 51 ≦ t
≦ 90. In addition, this composition range is aluminum
This is the average composition of the nitrogen layer, and the inside of the layer may be uniform or may have a slope. Aluminum / nitrogen layer thickness is 1n
It is preferable that the thickness be in the range of m to 50 μm. The reason for this is that if the film thickness is less than 1 nm, it becomes difficult to stably maintain the adhesion strength between the thin film conductor and the substrate. This is for peeling. Even if oxygen contained in the above-mentioned substrate is contained in the above-mentioned compound layer, the influence on the adhesion strength is small. Even more preferably 1
The range is from nm to 30 μm.

The metal layer is composed of Al and M1. At this time,
Nitrogen or oxygen may form a solid solution or form a compound in the layer, and it may be uniform or have a gradient. For example, the substrate side is rich in the nitride layer,
There is no problem even if the bonding layer side becomes rich in the metal layer. Al and M1, which are constituents of this layer, have an effect of improving the adhesion strength between the AlN substrate and the M1 layer of the bonding layer disposed on the substrate side. The ratio (atomic ratio) of each component of the metal layer,
The reason for limiting the type of M1 is as follows.

The atomic ratio of Al in Al _t M1 _100-t is
If it is less than 10, the adhesion strength between the AlN substrate and the thin-film conductor layer cannot be sufficiently increased, while if this atomic ratio exceeds 90, the amount of Al in the metal layer increases and the pattern for circuit formation and the like increases. Insufficient etching at the time of thinning causes a decrease in resistance between wirings, a short circuit, and the like. The preferred amount represented by the atomic ratio of Al is in the range of 10 to 90, and the more preferred amount is in the range of 15 to 88.

M1 is Ti, Cr, To, Zr, Hf
It is composed of a kind of element selected from the above. These elements have high reactivity with Al and are suitable for alloy formation. In addition, the M1 element contained in such a metal layer may not exist partially as an alloy with Al, and may exist as a simple metal or a metal nitride.

It is desirable that the thickness of the metal layer be in the range of 1 nm to 1 μm. This is because the thickness of the compound layer is 1
If it is less than nm, it is difficult to stably improve the adhesion strength between the AlN substrate and the thin film conductor layer. If the film thickness is 1 μm or more, it takes time to make the circuit board thinner and remove it by etching, and it is difficult to set conditions such as pattern accuracy. A more preferred thickness of the compound layer is in the range of 3 to 1 μm. On such a metal layer, the same bonding layer, barrier layer, and conductor layer as in the first invention are formed. Further, components having a metal surface are joined at desired positions on the AlN substrates of the first and second inventions.

As the component having a metal surface, various components can be adopted according to the use of the AlN substrate.
When used as a circuit board, electrode terminals, joining metal for sealing, parts for substrate support, joining metal with cooling fins, etc.
Any material can be used as long as it can be joined to a brazing material or solder.

The above-described AlN substrate and each layer have the respective compositions falling within the scope of the present invention even if they are mutually diffused, intermixed, or have a gradient structure during film formation or annealing. As long as, the function of the substrate does not deteriorate, and no problem occurs. Next, an example of the method for manufacturing an AlN substrate of the present invention will be described.

First, an AlN substrate having a surface roughness sufficient for forming, for example, a thin film circuit is prepared. The surface roughness can be adjusted by polishing the sintered substrate. However, if a sintered substrate using a submicron particle material is used, a desired surface roughness can be obtained without sintering.

Next, in the first aspect, a metal / nitride layer, a bonding layer, a barrier layer, and a thin film conductor layer, which are thin film layers, are sequentially formed. Further, in the second invention, a nitrogen / aluminum layer as a thin film layer, a metal layer, a bonding layer, a barrier layer,
Thin-film conductor layers are sequentially formed. Methods for forming thin films of these layers include vacuum deposition, sputtering, and cluster ion beam.
A general thin film forming method such as ion implantation, ion plating, or ion implantation can be used, and the substrate temperature, atmosphere, degree of vacuum, and film formation rate are appropriately adjusted. Prior to the formation of the thin film, the substrate surface is sufficiently cleaned by a wet cleaning method, a reverse sputtering method, or the like. However, since AlN is unstable to strong acids and strong alkalis, care must be taken in selecting a cleaning solution. It is preferable to use a neutral cleaning solution. After forming a metal / nitride layer or a nitrogen / aluminum layer and a metal layer by an appropriate method among the above-described thin film formation methods, a bonding layer is continuously formed without breaking vacuum. The substrate temperature may be within a range that does not hinder film formation, and is used from room temperature to about 800 ° C. On the bonding layer thus formed, a barrier layer is continuously formed without breaking vacuum. Next, a thin film conductor layer is formed on the barrier layer. In this case, this layer may be formed continuously without breaking vacuum, or may be formed by wet plating.

The AlN substrate thus formed is:
The adhesive strength of the thin-film conductor layer to the base is high, the peeling of the thin-film conductor layer can be prevented, and a component having a metal surface thereon can be joined with high adhesive strength. Therefore, it is possible to prevent the peeling or disconnection of the brazed parts, and to realize a semiconductor module capable of high-density mounting of active elements and the like.
Thus, it is possible to obtain a highly reliable circuit board that is useful for a device.

When the AlN substrate of the present invention is used as a circuit board, the patterning of the wiring portion is performed after the formation of the thin film conductor layer or after the joining of the components, but the former method is generally more convenient in operation. A desired pattern is formed on the thin film conductor layer by using a positive or negative resist, and etching or ion milling is performed on each of these layers by a wet method or a dry method to form a wiring pattern. In addition, Ag-Cu, Ag, Ag-Au, Pb-Sn,
It is preferable to form a brazing material or a solder layer of one of Au-Sn and Au-Si. In this case, a method such as printing a thick film or forming a thin film on a metal pattern preformed on the thin film conductor layer may be used. The joining condition with the component having the metal surface is not problematic as long as it is within the working range of the brazing material or the solder.
Minutes. In such a circuit board, a thin film resistor and a thin film capacitor may be formed as necessary.

[0033]

Embodiments of the present invention will be described below. Example 1

Under the conditions shown in Table 1, a metal / nitride layer (Al _x M1 _100-x : M1: M1 _y N _100-y =
u: v: w, where x, y, and v are atomic%, and u and w are molecular%), a bonding layer M1, a barrier layer, a conductor layer, and a brazing material layer are formed, and if necessary, a thin film capacitor and a thin film resistor are formed. Were bonded to form No. 1 to No. 10 circuit boards.

First, an AlN substrate having a thermal conductivity and an oxygen content shown in Table 1 is baked, or lapping and polishing is performed as necessary, and the surface is wet-cleaned and reverse sputtered. Then, a metal / nitride layer, a bonding layer, a barrier layer, and a thin film conductor layer were formed under the conditions shown in Table 1. Thereafter, after a wiring pattern is formed with a positive resist, Au is an etchant of KI + I ₂ + deionized water, Ni is an etchant of CuSO ₄ + HCl + ethyl alcohol + deionized water, and W is an etchant of Deionized water according to the type of metal. Hydrogen peroxide +
With a pure water etchant, Ti was etched with a HF + pure water etchant, and Nb, Ta, Mo, and Zr were etched with a nitric acid + HF + pure water etchant. The metal / nitride layer is Ti
And etching was possible with a Ta etchant. Thereafter, a circuit board having a thin film resistor and a thin film capacitor provided on the substrate surface as necessary was prepared.

Further, as Comparative Examples 1 and 2, compositions having the compositions shown in Table 1 were prepared in the same manner as in Example 1. Further, AlN substrates having thermal conductivity and oxygen content shown in Table 3 as Comparative Examples 3 to 6 were fired, lapped and polished.
A bonding layer, a barrier layer, and a thin-film conductor layer were formed under the conditions shown in Table 3, and a circuit board was prepared in the same manner as in Example 1.

After preparing the circuit board, adhesion strength, temperature cycle test of 1000 cycles (TCT: -50 to 150 ° C., holding for 30 minutes), pressure cooker test of 1000 hours (PCT:
After performing a heat resistance test at 500 ° C. for 5 minutes, the insulation resistance between the conductors (interval: 60 μm), the adhesion strength, and the adhesion strength after soldering were evaluated. The results are shown in Tables 2 and 4.

As a result, in Nos. 1 to 10, the adhesion strength of the wiring pattern to the substrate was sufficient at 20 MPa or more, and there was no peeling even after the temperature cycle test and the pressure cooker test, and the adhesion was good. It was confirmed that the insulation resistance after the heat resistance test was 490 GΩ, which was sufficiently practical. In addition, it was confirmed that even at a brazing temperature of 300 to 1000 ° C., the film was good without peeling.

On the other hand, as shown in Tables 2 and 4,
In No. 6, the adhesion strength was lower than that of the example, and peeling was observed in the wiring pattern after the temperature cycle test, the pressure cooker test, and the heat resistance test. Further, it was confirmed that the inter-wiring resistance was low and the etching was insufficient.
Example 2

Under the conditions shown in Table 5, a metal
Nitride layer (Al _x M1 _100-x : M1: M1 _y N _100-y =
u, v, w, where x, y, and v are atomic%, u and w are molecular%, a bonding layer (M1 _z N _100-z , where z is atomic%),
A barrier layer, a thin film conductor layer, and a brazing material layer were formed. Circuit boards Nos. 11 to 24 were prepared in the same manner as in Example 1, and evaluated in the same manner as in Example 1. As a result, it was confirmed that the characteristics were good as shown in Table 6, and that the adhesion was stronger than that of Example 1. On the other hand, Comparative Examples Nos. 7 to 9 having the compositions shown in Table 7 and prepared in the same manner as Comparative Example 1 as shown in Table 8
Sufficient characteristics could not be obtained as in the cases of Nos. 6 to 6. Example 3

Under the conditions shown in Table 9, an aluminum / nitrogen layer (Al _t M _100-t , where t is atomic%) and a metal layer (Al _{x ′} M1 _{100-x ′} , where x ′ %), A bonding layer M1, a barrier layer, a conductor layer, and a brazing material layer were formed, and circuit boards Nos. 25 to 41 were prepared in the same manner as in Example 1, and evaluated in the same manner as in Example 1. As a result, as shown in Table 10, it was confirmed that the characteristics were good and the adhesion was stronger than that of Example 1. On the other hand, Comparative Examples Nos. 10 and 11 having the compositions shown in Table 11 similarly prepared did not have sufficient characteristics as in Comparative Examples 1 to 9 as shown in Table 12.

[0042]

[Table 1]

[0043]

[Table 2]

[0044]

[Table 3]

[0045]

[Table 4]

[0046]

[Table 5]

[0047]

[Table 6]

[0048]

[Table 7]

[0049]

[Table 8]

[0050]

[Table 9]

[0051]

[Table 10]

[0052]

[Table 11]

[0053]

[Table 12]

[0054]

According to the present invention, the thin-film conductor layer and the AlN
An AlN substrate having a high adhesion strength to a substrate can be provided.

Continued on the front page (72) Inventor Kaoru Koiwa 70, Yanagimachi, Yukicho, Kawasaki-shi, Kanagawa Prefecture Inside the Toshiba Yanagimachi Plant Co., Ltd. (56) References JP-A-4-218950 (JP, A) Patent 2664744 (JP, B2) Patent 2685806 (JP, B2) (58) Fields investigated (Int. Cl. ⁷ , DB name) H05K 1/03 H05K 1/09 H05K 3/38

Claims (2)

(57) [Claims] An AlN substrate and a TN provided on the substrate,
At least one kind of element M1 selected from i, Cr, Ta, Zr and Hf, Al and N are represented by Al _x M1 _100-x :
M1: M1 _y N _100-y = u: v: w (where x, y,
v indicates atomic%, u and w indicate molecular%, and u + v + w = 100
25 ≦ x ≦ 90, 40 ≦ y ≦ 70, 40 ≦ u ≦ 98, respectively.
0.2 ≦ v ≦ 40, 1 ≦ w ≦ 40), and a bonding layer laminated on the metal / nitride layer and containing the M1. W, Nb, Ta, Mo, Ni, Pt, Pd, N
a barrier layer mainly composed of at least one selected from iCr, and Au, Cu, A laminated on the barrier layer
An AlN substrate comprising: a thin-film conductor layer mainly composed of at least one of the following: 1. A component having a metal surface is bonded to a predetermined position of the thin-film conductor layer. 2. An AlN substrate and an AlN substrate provided on the substrate.
l and N are represented by Al _t N _100-t (where t represents atomic% and 50
<T <100) and at least one selected from Ti, Cr, Ta, Zr, and Hf laminated on the nitrogen / aluminum layer. The elements M1 and Al are converted to Al _{x '} M1
A metal layer containing _{100-x ′} (where x ′ represents atomic% and in the range of 10 ≦ x ′ ≦ 90), and a junction laminated on the metal layer and containing the M1 And W, Nb, Ta, Mo, Ni, Pt,
A barrier layer mainly composed of at least one selected from Pd and NiCr; and Au, laminated on the barrier layer.
An AlN substrate comprising: a thin-film conductor layer mainly composed of at least one of Cu and Al; and a component having a metal surface bonded to a predetermined position of the thin-film conductor layer.