JP3032067B2 - Epoxy resin composition - Google Patents
Epoxy resin compositionInfo
- Publication number
- JP3032067B2 JP3032067B2 JP4006958A JP695892A JP3032067B2 JP 3032067 B2 JP3032067 B2 JP 3032067B2 JP 4006958 A JP4006958 A JP 4006958A JP 695892 A JP695892 A JP 695892A JP 3032067 B2 JP3032067 B2 JP 3032067B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- curing agent
- resin composition
- formula
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003822 epoxy resin Substances 0.000 title claims description 39
- 229920000647 polyepoxide Polymers 0.000 title claims description 39
- 239000000203 mixture Substances 0.000 title claims description 19
- 239000005011 phenolic resin Substances 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000011256 inorganic filler Substances 0.000 claims description 5
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 5
- -1 2,3-epoxypropoxy Chemical group 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 2
- 230000035882 stress Effects 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 13
- 238000005476 soldering Methods 0.000 description 12
- 239000000843 powder Substances 0.000 description 10
- 229920003986 novolac Polymers 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 7
- MEVBAGCIOOTPLF-UHFFFAOYSA-N 2-[[5-(oxiran-2-ylmethoxy)naphthalen-2-yl]oxymethyl]oxirane Chemical compound C1OC1COC(C=C1C=CC=2)=CC=C1C=2OCC1CO1 MEVBAGCIOOTPLF-UHFFFAOYSA-N 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000011342 resin composition Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000012778 molding material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- XYXBMCIMPXOBLB-UHFFFAOYSA-N 3,4,5-tris(dimethylamino)-2-methylphenol Chemical compound CN(C)C1=CC(O)=C(C)C(N(C)C)=C1N(C)C XYXBMCIMPXOBLB-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体デバイスの表面
実装時における耐半田ストレス性及び耐湿性に優れた半
導体封止用エポキシ樹脂組成物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation which has excellent resistance to soldering stress and moisture during surface mounting of a semiconductor device.
【0002】[0002]
【従来の技術】従来、集積回路、トランジスタ、ダイオ
ード等の半導体デバイスを熱硬化性樹脂で封止している
が、特に集積回路では耐熱性、耐湿性に優れたオルソク
レゾールノボラックエポキシ樹脂をノボラック型フェノ
ール樹脂で硬化させるエポキシ樹脂組成物が用いられて
いる。しかし、近年の半導体デバイスの高集積化、多機
能化、合理化に伴うチップの大型化、パッケージの小型
化・薄型化の傾向は著しく、また実装合理化が進み、従
来のDIPタイプから表面実装型のパッケージであるS
OJ、SOP、QFP等の比率が高まっている。2. Description of the Related Art Conventionally, semiconductor devices such as integrated circuits, transistors and diodes are sealed with a thermosetting resin. In particular, in the case of integrated circuits, ortho-cresol novolak epoxy resin having excellent heat resistance and moisture resistance is made of a novolak type. An epoxy resin composition cured with a phenol resin is used. However, in recent years, there has been a remarkable tendency to increase the size of chips and reduce the size and thickness of packages due to the high integration, multifunctionality, and rationalization of semiconductor devices. Package S
The ratio of OJ, SOP, QFP, etc. is increasing.
【0003】大型チップを小型で薄いパッケージへ封入
した表面実装型パッケージは、半田付けの工程において
急激に200℃以上の高温にさらされ、大きな応力を受
け、パッケージが割れたり、チップと封止樹脂の界面が
剥離するといった現象が発生し、半導体デバイスの信頼
性に致命的な問題となっている。そのため、これらの表
面実装型パッケージを封止するのに適した信頼性の高い
封止用樹脂組成物の開発が急がれている。A surface mount type package in which a large chip is enclosed in a small and thin package is rapidly exposed to a high temperature of 200 ° C. or more in a soldering process, receives a large stress, breaks the package, and causes the chip to be sealed with a sealing resin. A phenomenon such as separation of the interface of the semiconductor device occurs, which is a fatal problem in the reliability of the semiconductor device. Therefore, development of a highly reliable encapsulating resin composition suitable for encapsulating these surface mount packages is urgent.
【0004】これらの問題を解決するために半田付け時
の熱衝撃を緩和する目的で、熱可塑性オリゴマーの添加
(特開昭62−115849号公報)や各種シリコーン
化合物の添加(特開昭62−115850号公報、62
−116654号公報62−128162号公報)、さ
らにはシリコーン変性(特開昭62−136860号公
報)などの手法で対応しているがいずれも半田付け時に
パッケージにクラックが発生し信頼性の優れた半導体封
止用エポキシ樹脂組成物を得るまでには至らなかった。In order to solve these problems, addition of thermoplastic oligomers (Japanese Patent Application Laid-Open No. 62-15849) and addition of various silicone compounds (Japanese Patent Application Laid-Open No. No. 115850, 62
JP-A-116654 / 62-128162) and silicone modification (Japanese Patent Laid-Open No. 62-136860), all of which have cracks in the package at the time of soldering and have excellent reliability. It has not been possible to obtain an epoxy resin composition for semiconductor encapsulation.
【0005】一方、半田付け時の耐熱ストレス性つまり
耐半田ストレス性に優れた半導体封止用エポキシ樹脂組
成物を得るために、樹脂系としてビフェニル型エポキシ
樹脂の使用(特開昭64−65116号公報)等が、検
討されてきたがビフェニル型エポキシの使用によりリー
ドフレームとの密着性及び低吸水性が向上し、クラック
発生が低減するが、耐熱性が劣るため特に250℃以上
の高温では、まだ耐半田ストレス性が不十分である。On the other hand, in order to obtain an epoxy resin composition for semiconductor encapsulation having excellent heat stress resistance during soldering, that is, excellent solder stress resistance, a biphenyl type epoxy resin is used as a resin system (Japanese Patent Application Laid-Open No. 64-65116). Publication) has been studied, but the use of a biphenyl type epoxy improves the adhesion to the lead frame and low water absorption, reduces the occurrence of cracks, but is inferior in heat resistance, especially at a high temperature of 250 ° C. or higher. The solder stress resistance is still insufficient.
【0006】[0006]
【発明が解決しようとする課題】本発明は、このような
問題に対して信頼性を劣化させることなく耐半田ストレ
ス性及び耐湿性に優れた半導体封止用樹脂組成物を提供
するものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a resin composition for semiconductor encapsulation which is excellent in solder stress resistance and moisture resistance without deteriorating the reliability against such a problem. .
【0007】[0007]
【課題を解決するための手段】本発明のエポキシ樹脂組
成物は、(A)エポキシ樹脂として、式(1)で示され
る1、6−ビス(2、3−エポキシプロポキシ)ナフタ
レンを総エポキシ樹脂量に対して30〜100重量%含
むエポキシ樹脂、The epoxy resin composition of the present invention comprises, as an epoxy resin (A), 1,6-bis (2,3-epoxypropoxy) naphthalene represented by the formula (1) as a total epoxy resin: An epoxy resin containing 30 to 100% by weight based on the amount;
【0008】[0008]
【化3】 Embedded image
【0009】(B)フェノール樹脂硬化剤として、式
(2)の化学構造式で示される3官能フェノール樹脂硬
化剤(B) a trifunctional phenol resin curing agent represented by the chemical structural formula of the formula (2):
【0010】[0010]
【化4】 Embedded image
【0011】(式中、R1 〜R11は水素、ハロゲン、ア
ルキル基の中から選択される同一もしくは異なる原子ま
たは基)を総フェノール樹脂硬化剤量に対して50〜1
00重量%含むフェノール樹脂硬化剤、(C)無機充填
材および(D)硬化促進剤を必須成分とする半導体封止
用樹脂組成物で、従来のエポキシ樹脂に比べ、非常に優
れた耐半田ストレス性を有するものである。(Wherein R 1 to R 11 are the same or different atoms or groups selected from hydrogen, halogen, and alkyl group) in an amount of 50 to 1 with respect to the total amount of the phenol resin curing agent.
A resin composition for semiconductor encapsulation containing, as essential components, a phenolic resin curing agent containing 00% by weight, (C) an inorganic filler, and (D) a curing accelerator, and has a much better soldering resistance than conventional epoxy resins. It has the property.
【0012】本発明に用いる式(1)で示されるエポキ
シ樹脂は、1、6−ビス(2、3−エポキシプロポキ
シ)ナフタレンであり、常温で半固形の性状を示し、成
形温度(175℃)において非常に低粘度であることか
ら、充填材の添加量を大幅に増加させることが可能とな
る。このことより、低吸水性に優れ、樹脂の線膨張係数
が小さく、成形時の離型性に優れるという樹脂本体の特
長に加え、充填材の高充填された樹脂組成物は、吸水率
及び線膨張係数がさらに小さく、かつ衝撃強度に優れる
という特長を有し、半田付け時の耐半田ストレス性に良
好の結果を示す。この1、6−ビス(2、3−エポキシ
プロポキシ)ナフタレンの使用量は、これを調節するこ
とにより耐半田ストレス性を最大限に引き出すことがで
きる。The epoxy resin represented by the formula (1) used in the present invention is 1,6-bis (2,3-epoxypropoxy) naphthalene, which shows a semi-solid property at room temperature and a molding temperature (175 ° C.) In this case, the viscosity is very low, so that the amount of the filler added can be greatly increased. From this, in addition to the characteristics of the resin body that is excellent in low water absorption, the coefficient of linear expansion of the resin is small, and the mold releasability at the time of molding is excellent, the resin composition highly filled with a filler has a high water absorption and linearity. It has the characteristics of having a smaller expansion coefficient and excellent impact strength, and shows good results in resistance to soldering stress during soldering. By adjusting the amount of 1,6-bis (2,3-epoxypropoxy) naphthalene used, the solder stress resistance can be maximized by adjusting the amount.
【0013】耐半田ストレス性の効果を出すためには
1、6−ビス(2、3−エポキシプロポキシ)ナフタレ
ンを総エポキシ樹脂の30重量%以上、好ましくは60
重量%以上の使用が望ましい。30重量%未満では、低
吸水性、低線熱膨張係数が十分に得られず、耐半田スト
レス性が不十分である。1、6−ビス(2、3−エポキ
シプロポキシ)ナフタレン以外のエポキシ樹脂を併用す
る場合、用いるエポキシ樹脂とは、エポキシ基を有する
ポリマー全般をいう。たとえばビスフェノール型エポキ
シ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェ
ニル型エポキシ樹脂、フェノールノボラック型エポキシ
樹脂及びトリフェノールメタン型エポキシ樹脂、アルキ
ル変性トリフェノールメタン型エポキシ樹脂等の3官能
エポキシ樹脂、トリアジン核含有エポキシ樹脂等のこと
をいう。In order to obtain the effect of resistance to soldering stress, 1,6-bis (2,3-epoxypropoxy) naphthalene is used in an amount of 30% by weight or more, preferably 60% by weight of the total epoxy resin.
It is desirable to use not less than weight%. If the content is less than 30% by weight, low water absorption and low coefficient of linear thermal expansion cannot be sufficiently obtained, and solder stress resistance is insufficient. When an epoxy resin other than 1,6-bis (2,3-epoxypropoxy) naphthalene is used in combination, the epoxy resin used generally refers to any polymer having an epoxy group. For example, trifunctional epoxy resins such as bisphenol type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, phenol novolak type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, and epoxy resin containing triazine nucleus And so on.
【0014】式(2)で示される構造の3官能フェノー
ル樹脂硬化剤は一分子中に3個の水酸基を有するフェノ
ール樹脂硬化剤である。その特徴はエポキシ樹脂との反
応硬化物の架橋密度が向上し、ガラス転移温度が向上す
る。したがって、最近の表面実装化に対する半田付け時
での耐半田ストレス性に好適である。この3官能フェノ
ール樹脂硬化剤の使用量は、これを調節することにより
耐半田ストレス性を最大限に引き出すことができる。耐
半田ストレス性の効果を出すためには式(2)で示され
る3官能フェノール樹脂硬化剤を総フェノール樹脂硬化
剤量の50重量%以上好ましくは70重量%以上の使用
が望ましい。50重量%未満だと、架橋密度が上がら
ず、耐半田ストレスが不十分である。The trifunctional phenol resin curing agent having the structure represented by the formula (2) is a phenol resin curing agent having three hydroxyl groups in one molecule. The feature is that the crosslink density of the reaction cured product with the epoxy resin is improved, and the glass transition temperature is improved. Therefore, it is suitable for resistance to soldering stress during soldering for recent surface mounting. By adjusting the amount of the trifunctional phenol resin curing agent used, the solder stress resistance can be maximized. In order to obtain the effect of resistance to soldering stress, it is desirable to use the trifunctional phenolic resin curing agent represented by the formula (2) in an amount of 50% by weight or more, preferably 70% by weight or more of the total amount of the phenolic resin curing agent. If it is less than 50% by weight, the crosslink density does not increase and the soldering stress resistance is insufficient.
【0015】更に式中のR1 、R2 、R4 〜R7 、
R10、R11は水素原子、R3 、R8 、R9 はメチル基が
好ましい。また、2官能以下のフェノール樹脂硬化剤で
は架橋密度が上がらず、耐半田ストレス性が低下する傾
向がある。式(2)で示される3官能フェノール樹脂硬
化剤以外に他のフェノール樹脂硬化剤を併用する場合、
用いるフェノール樹脂硬化剤とはフェノール性水酸基を
有するポリマー全般をいう。たとえば、フェノールノボ
ラック樹脂、クレゾールノボラック樹脂、ジシクロペン
タジエン変性フェノール樹脂、ジシクロペンタジエン変
性フェノール樹脂とフェノールノボラック及びクレゾー
ルノボラック樹脂との共縮合物、パラキシレン変性フェ
ノール樹脂等を用いることができる。In the formula, R 1 , R 2 , R 4 to R 7 ,
R 10 and R 11 are preferably hydrogen atoms, and R 3 , R 8 and R 9 are preferably methyl groups. Further, with a phenol resin curing agent having two or less functions, the crosslink density does not increase, and the solder stress resistance tends to decrease. When other phenol resin curing agents are used in addition to the trifunctional phenol resin curing agent represented by the formula (2),
The phenol resin curing agent used refers to all polymers having a phenolic hydroxyl group. For example, phenol novolak resins, cresol novolak resins, dicyclopentadiene-modified phenol resins, co-condensates of dicyclopentadiene-modified phenol resins with phenol novolak and cresol novolak resins, para-xylene-modified phenol resins, and the like can be used.
【0016】本発明に用いる無機充填材としては、溶融
シリカ粉末、球状シリカ粉末、結晶シリカ粉末、2次凝
集シリカ粉末、多孔質シリカ粉末、2次凝集シリカ粉末
または多孔質シリカ粉末を粉砕したシリカ粉末、アルミ
ナ等が挙げられ、特に溶融シリカ粉末が好ましい。また
無機充填材の配合量としては、耐半田ストレス性と成形
性のバランスから、総樹脂組成物中に70〜90重量%
含むものが好ましい。The inorganic filler used in the present invention includes fused silica powder, spherical silica powder, crystalline silica powder, secondary aggregated silica powder, porous silica powder, secondary aggregated silica powder or silica obtained by pulverizing porous silica powder. Powder, alumina and the like, and a fused silica powder is particularly preferable. The amount of the inorganic filler is 70 to 90% by weight in the total resin composition in consideration of the balance between solder stress resistance and moldability.
Is preferred.
【0017】本発明に使用される硬化促進剤はエポキシ
樹脂とフェノール性水酸基との反応を促進させるもので
あれば良く、一般に封止用材料に使用されているものを
広く使用することができ、例えばトリフェニルホスフィ
ン(TPP)、トリブチルホスフィン、トリ(4−メチ
ルフェニル)ホスフィン等の有機ホスフィン化合物、ト
リブチルアミン、トリエチルアミン、ジメチルベンジル
アミン(BDMA)、トリスジメチルアミノメチルフェ
ノール、ジアザビシクロウンデセン(DBU)等の3級
アミン、2−メチルイミダゾール、2−フェニルイミダ
ゾール、2−エチル−4−メチルイミダゾール等のイミ
ダゾール化合物が挙げられる。これらは単独もしくは2
種類以上混合して用いられる。The curing accelerator used in the present invention may be any one which promotes the reaction between the epoxy resin and the phenolic hydroxyl group, and those generally used for sealing materials can be widely used. For example, organic phosphine compounds such as triphenylphosphine (TPP), tributylphosphine and tri (4-methylphenyl) phosphine, tributylamine, triethylamine, dimethylbenzylamine (BDMA), trisdimethylaminomethylphenol, and diazabicycloundecene (DBU) ) And imidazole compounds such as 2-methylimidazole, 2-phenylimidazole and 2-ethyl-4-methylimidazole. These can be used alone or 2
It is used by mixing more than one kind.
【0018】本発明の封止用エポキシ樹脂組成物はエポ
キシ樹脂、硬化剤、無機充填材および硬化促進剤を必須
成分とするが、これ以外に必要に応じてシランカップリ
ング剤、ブロム化エポキシ樹脂、三酸化アンチモン、ヘ
キサブロムベンゼン等の難燃剤、カーボンブラック、ベ
ンガラ等の着色剤、天然ワックス、合成ワックス等の離
型剤およびシリコーンオイル、ゴム等の低応力添加剤等
の種々の添加剤を適宜配合しても差し支えない。又、本
発明の封止用エポキシ樹脂組成物を成形材料として製造
するには、エポキシ樹脂、硬化剤、硬化促進剤、充填
剤、その他の添加剤をミキサー等により十分に均一混合
した後さらに熱ロールまたはニーダー等で溶融混合し、
冷却後粉砕して成形材料とすることができる。これらの
成形材料は電子部品あるいは電気部品の封止、被覆、絶
縁等に適用することができる。The epoxy resin composition for encapsulation of the present invention comprises an epoxy resin, a curing agent, an inorganic filler and a curing accelerator as essential components. In addition to this, a silane coupling agent and a brominated epoxy resin may be used if necessary. Various additives such as flame retardants such as antimony trioxide and hexabromobenzene, coloring agents such as carbon black and red iron oxide, release agents such as natural wax and synthetic wax, and low stress additives such as silicone oil and rubber. It may be properly compounded. In addition, in order to produce the encapsulating epoxy resin composition of the present invention as a molding material, the epoxy resin, curing agent, curing accelerator, filler, and other additives are sufficiently uniformly mixed by a mixer or the like, and then further heated. Melt and mix with a roll or kneader, etc.
After cooling, it can be pulverized into a molding material. These molding materials can be applied to sealing, coating, insulating and the like of electronic parts or electric parts.
【0019】[0019]
【実施例】以下に本発明を実施例で示す。配合割合は重
量部とする。 実施例1 下記組成物 1、6−ビス(2、3−エポキシプロポキシ)ナフタレン (エポキシ当量150) 12.4重量部 式(3)で示される3官能フェノール樹脂硬化剤 (水素基当量141) 11.6重量部The present invention will be described below by way of examples. The mixing ratio is by weight. Example 1 The following composition 1,6-bis (2,3-epoxypropoxy) naphthalene (epoxy equivalent 150) 12.4 parts by weight Trifunctional phenol resin curing agent represented by the formula (3) (hydrogen group equivalent 141) 11 .6 parts by weight
【0020】[0020]
【化5】 Embedded image
【0021】 溶融シリカ粉末 75.0重量部 トリフェニルホスフィン 0.2重量部 カーボンブラック 0.3重量部 カルナバワックス 0.5重量部 をミキサーで常温で混合し、70〜100℃で2軸ロー
ルにより混練し、冷却後粉砕し成形材料とし、これをタ
ブレット化して半導体封止用エポキシ樹脂組成物を得
た。この組成物を低圧トランスファー成形機(成形条
件:175℃、70kg/cm2、120秒)を用いて成形
し、得られた成形品を175℃、8時間で後硬化し評価
した。試験結果を表1に示す。75.0 parts by weight of fused silica powder 0.2 parts by weight of triphenylphosphine 0.3 parts by weight of carbon black 0.5 parts by weight of carnauba wax are mixed at room temperature with a mixer, and are mixed at 70 to 100 ° C. with a biaxial roll. The mixture was kneaded, cooled and pulverized to obtain a molding material, which was tabletted to obtain an epoxy resin composition for semiconductor encapsulation. This composition was molded using a low-pressure transfer molding machine (molding conditions: 175 ° C., 70 kg / cm 2 , 120 seconds), and the obtained molded article was post-cured at 175 ° C. for 8 hours and evaluated. Table 1 shows the test results.
【0022】評価方法 *1 スパイラルフロー EMMI−I−66に準じたスパイラルフロー測定用金
型を用い、試料を15g、成形温度を175℃、成形圧
力70kg/cm2 、成形時間2分で成形したときの成形品
の長さ *2 半田ストレス性試験 成形品(チップサイズ36mm2 、パッケージ厚2.0
5mm)20個について85℃85%RHの雰囲気中で
72時間処理後、260℃の半田槽に10秒間浸漬し、
クラックの発生した成形品の個数を示す。 *3 半田耐湿性試験 封止したテスト用素子を85℃で、85%RHの雰囲気
中で72時間処理し、その後240℃の半田槽に10秒
間浸漬後、プレッシャークッカー試験(125℃、10
0%RH)を行い、回路のオープン不良数を測定した。Evaluation method * 1 Spiral flow Using a mold for measuring spiral flow in accordance with EMMI-I-66, 15 g of a sample was molded at a molding temperature of 175 ° C, a molding pressure of 70 kg / cm 2 , and a molding time of 2 minutes. * 2 Solder stress test Molded product (chip size 36 mm 2 , package thickness 2.0
5 mm) 20 pieces were treated in an atmosphere of 85 ° C. and 85% RH for 72 hours, then immersed in a solder bath at 260 ° C. for 10 seconds,
Shows the number of cracked molded products. * 3 Solder Moisture Resistance Test The sealed test element was treated at 85 ° C. in an atmosphere of 85% RH for 72 hours, then immersed in a 240 ° C. solder bath for 10 seconds, and then subjected to a pressure cooker test (125 ° C., 10%).
0% RH), and the number of open defects of the circuit was measured.
【0023】実施例2〜4 表1に従って配合し、実施例1と同様にしてエポキシ樹
脂組成物を得た。この組成物を用いて、実施例1と同様
の試験を行った。結果を表1に示す。Examples 2 to 4 The components were blended according to Table 1, and an epoxy resin composition was obtained in the same manner as in Example 1. The same test as in Example 1 was performed using this composition. Table 1 shows the results.
【0024】比較例1〜5 表1に従って配合し、実施例1と同様にしてエポキシ樹
脂組成物を得た。この組成物を用いて、実施例1と同様
の試験を行った。結果を表1に示す。Comparative Examples 1 to 5 Compounded according to Table 1, and an epoxy resin composition was obtained in the same manner as in Example 1. The same test as in Example 1 was performed using this composition. Table 1 shows the results.
【0025】[0025]
【表1】 [Table 1]
【0026】[0026]
【発明の効果】本発明による半導体封止用エポキシ樹脂
組成物は、耐半田ストレス性および耐湿性に極めて優れ
ていることにより、表面実装パッケージ封止用樹脂組成
物として好適である。The epoxy resin composition for encapsulating a semiconductor according to the present invention is extremely excellent in solder stress resistance and moisture resistance, and thus is suitable as a resin composition for encapsulating a surface mount package.
フロントページの続き (51)Int.Cl.7 識別記号 FI C08L 63/00 C08L 63/00 H01L 23/31 (58)調査した分野(Int.Cl.7,DB名) H01L 23/29 C08G 59/20 C08G 59/62 C08K 3/36 C08K 5/5313 C08L 63/00 H01L 23/31 Continuation of the front page (51) Int.Cl. 7 identification code FI C08L 63/00 C08L 63/00 H01L 23/31 (58) Field surveyed (Int.Cl. 7 , DB name) H01L 23/29 C08G 59 / 20 C08G 59/62 C08K 3/36 C08K 5/5313 C08L 63/00 H01L 23/31
Claims (1)
示される1、6−ビス(2、3−エポキシプロポキシ)
ナフタレンを総エポキシ樹脂量に対して30〜100重
量%含むエポキシ樹脂、 【化1】 (B)フェノール樹脂硬化剤として、式(2)の化学構
造式で示される3官能フェノール樹脂硬化剤 【化2】 (式中、R1 〜R11は水素、ハロゲン、アルキル基の中
から選択される同一もしくは異なる原子または基)を総
フェノール樹脂硬化剤量に対して50〜100重量%含
むフェノール樹脂硬化剤、 (C)無機充填材および (D)硬化促進剤 を必須成分とする半導体封止用エポキシ樹脂組成物。(1) 1,6-bis (2,3-epoxypropoxy) represented by the formula (1) as an epoxy resin:
An epoxy resin containing naphthalene in an amount of 30 to 100% by weight based on the total amount of the epoxy resin; (B) a trifunctional phenol resin curing agent represented by the chemical structural formula of the formula (2) as a phenol resin curing agent: (Wherein R 1 to R 11 are the same or different atoms or groups selected from hydrogen, halogen and alkyl groups) a phenol resin curing agent containing 50 to 100% by weight based on the total phenol resin curing agent amount; An epoxy resin composition for semiconductor encapsulation comprising (C) an inorganic filler and (D) a curing accelerator as essential components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4006958A JP3032067B2 (en) | 1992-01-18 | 1992-01-18 | Epoxy resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4006958A JP3032067B2 (en) | 1992-01-18 | 1992-01-18 | Epoxy resin composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05190706A JPH05190706A (en) | 1993-07-30 |
| JP3032067B2 true JP3032067B2 (en) | 2000-04-10 |
Family
ID=11652736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4006958A Expired - Fee Related JP3032067B2 (en) | 1992-01-18 | 1992-01-18 | Epoxy resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3032067B2 (en) |
-
1992
- 1992-01-18 JP JP4006958A patent/JP3032067B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05190706A (en) | 1993-07-30 |
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