JP3043875B2 - Au wire for bonding semiconductor devices - Google Patents
Au wire for bonding semiconductor devicesInfo
- Publication number
- JP3043875B2 JP3043875B2 JP3324713A JP32471391A JP3043875B2 JP 3043875 B2 JP3043875 B2 JP 3043875B2 JP 3324713 A JP3324713 A JP 3324713A JP 32471391 A JP32471391 A JP 32471391A JP 3043875 B2 JP3043875 B2 JP 3043875B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- ball
- chip
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体チップ上の電極
と基板上の外部リードとを接続するために用いられるボ
ンディング用Ａｕ線、特にボールボンディング法に好適
なものに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding Au wire used for connecting an electrode on a semiconductor chip to an external lead on a substrate, and more particularly to a wire suitable for a ball bonding method.
【０００２】[0002]
【従来の技術】従来、この種の半導体素子のボンディン
グ用Ａｕ線として、例えばキャピラリーの先端から垂下
したＡｕ線の先端を電気トーチにより溶融させてボール
を形成し、このボールをＳｉチップ上のＡｌ又はＡｌ合
金からなる電極に圧着して接着せしめ、その後、ループ
状に外部リードまで導いて該外部リードに圧着・切断す
ることにより、チップ電極と外部リードを接続させるも
のである。2. Description of the Related Art Conventionally, as an Au wire for bonding a semiconductor element of this kind, for example, a tip of an Au wire hanging down from a tip of a capillary is melted by an electric torch to form a ball, and the ball is formed on an Al chip on a Si chip. Alternatively, the chip electrode and the external lead are connected by pressure bonding and bonding to an electrode made of an Al alloy, then guiding the external lead in a loop shape, and pressing and cutting the external lead.
【０００３】[0003]
【発明が解決しようとする課題】しかし乍ら、このよう
な従来の半導体素子のボンディング用Ａｕ線では、極め
て高純度のＡｕ（９９．９９ｗｔ％以上）からなるため
に、熱圧着時において、ボールボンディングされた電極
の表面を構成するＡｌ層のＡｌが、ボンディングワイヤ
の主成分であるＡｕ中に拡散する速度が速いことによ
り、Ａｌ層のＡｌがボールのＡｕ中へ移行してしまい、
Ａｌ層のＡｌが不足する状態となるために接合強度が低
下しボンディング後の高温放置試験においてＡ点（ボー
ルとチップの接合面）剥がれの発生率が高いという不具
合があった。このような不具合を解消するべく本願発明
者は鋭意研究を重ねた結果、高純度ＡｕにＣｕ，Ｚｎ，
Ｗ，Ｒｅ，Ｐｄ等を添加することが、ＡｌがＡｕ中に拡
散する速度を抑制し得るのに有効であることを見出した
が、その添加量によってはボール形成時にボールが硬く
なりすぎ、ボンディングの際にチップ割れが生じる虞れ
がある等の知見を得た。 However, such a conventional Au wire for bonding a semiconductor element is made of very high-purity Au (99.99 wt% or more). Since the speed of diffusion of Al in the Al layer constituting the surface of the bonded electrode into Au, which is the main component of the bonding wire, is high, Al in the Al layer migrates into Au of the ball,
Since the Al layer is in a state of insufficient Al, the bonding strength is reduced, and there is a problem that the rate of peeling at point A (the bonding surface between the ball and the chip) is high in a high-temperature storage test after bonding. The invention of the present application to solve such a problem
As a result of intensive research, they found that Cu, Zn,
Addition of W, Re, Pd, etc., causes Al to expand into Au.
Found to be effective in controlling the scattering speed
However, depending on the added amount, the ball is hard during ball formation
It is possible that chip breakage may occur during bonding.
There was knowledge that there was.
【０００４】本発明は斯る従来事情に鑑み、ボンディン
グ用Ａｕ線をチップのＡｌ電極表面にボールボンディン
グした際に、ＡｌがＡｕ中に移行してしまう虞れを低減
して、高温放置試験においてボンディング部分における
Ａ点剥がれの発生率を徹底的に低下させることができる
と共に、ボンディング時にチップ割れが生じる虞れが無
く、適正な接合がなされるボンディング用Ａｕ線を提供
することを目的とする。[0004] The present invention has been made in view of the conventional circumstances斯Ru, Bondin
Bonding Au wire on the surface of the Al electrode of the chip
The possibility that Al migrates into Au when
In the high temperature storage test,
The occurrence rate of point A peeling can be reduced thoroughly
At the same time, there is no risk of chip breakage during bonding.
And provide Au wire for bonding that allows proper bonding
The purpose is to do.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に本発明が講ずる技術的手段は、高純度Ａｕに、Ｃｕを
４００〜１００００原子ｐｐｍと、Ｚｎ，Ｗ，Ｒｅ及び
Ｐｄの中から１種又は２種以上を１０００〜１５０００
原子ｐｐｍを添加し、且つこれら添加元素の総量を２０
００〜２００００原子ｐｐｍの範囲として、ボールボン
ディング時におけるチップ電極のＡｌ層のＡｌがＡｕボ
ール中に移行する金属拡散を適度に制御することを特徴
とするものである。そして、高純度Ａｕとは、不可避不
純物を含む９９．９９％以上のものを母材として用い
る。The technical measures taken by the present invention to solve the above-mentioned problems are as follows: Cu is added to high-purity Au.
400 to 10000 atomic ppm, Zn, W, Re and
One or more of Pd from 1000 to 15000
Atomic ppm is added and the total amount of these added elements is 20
In the range of 00 to 20,000 atomic ppm,
Al of the Al layer of the chip electrode during loading is Au
The invention is characterized in that metal diffusion migrating into the metal is appropriately controlled . The high-purity Au contains 99.99% or more containing unavoidable impurities as a base material.
【０００６】[0006]
【作用】本発明によればＣｕと、Ｚｎ，Ｗ，Ｒｅ及びＰ
ｄの中から１種又は２種以上とを組み合わせて添加する
ことにより、熱圧着時のボール（Ａｕ）に対するチップ
電極の下地金属層（Ａｌ）の金属拡散が適度に抑制され
てＡ点における接合強度が改善されると共に、ボンディ
ング時にチップ割れが生じることが無く、適正な接合が
行なわれるようになり、不良品の発生率を低下すること
ができる。According to the present invention, Cu, Zn, W, Re and P
Add one or more of d in combination
It result, the bonding strength in the base metal layer a metal diffusion is moderately suppressed the point A (Al) of the tip electrode relative to the ball (Au) during the thermocompression bonding is improved, Bondi
No cracking during chipping and proper bonding
To reduce the incidence of defective products
Can be .
【０００７】しかし、Ｃｕの添加量が４００原子ｐｐｍ
未満、Ｚｎ，Ｗ，Ｒｅ及びＰｄの添加量が１０００原子
ｐｐｍ未満、添加元素の総量が２０００原子ｐｐｍ未満
では、上記金属拡散の抑制および適正なボール硬度に関
し満足な特性を得ることができない。However, the addition amount of Cu is 400 atomic ppm.
Less than 1000 atoms of Zn, W, Re and Pd
ppm, the total amount of added elements is less than 2000 atomic ppm
Now, regarding the suppression of metal diffusion and proper ball hardness,
However, satisfactory characteristics cannot be obtained .
【０００８】一方、Ｃｕの含有量が１００００原子ｐｐ
ｍ、Ｚｎ，Ｗ，Ｒｅ，Ｐｄの含有量が１５０００原子ｐ
ｐｍ、添加元素の総量が２００００原子ｐｐｍを越える
と、反対にＡ点の接合強度が低下し、Ａ点剥がれの発生
率が増大する虞れがあり、更に、ボール形成時にボール
が硬くなり過ぎて、ボールボンディングの際にチップ割
れの原因となり、不良品の発生率が高くなるという問題
もある。On the other hand, when the Cu content is 10,000 atom pp
m, Zn, W, Re, Pd content is 15000 atom p
pm, the total amount of the additive element exceeds 20000 atoms ppm, reduces the bonding strength of the point A on the opposite, there is a possibility that the incidence of peeling point A is increased, further, the ball during ball formation
Becomes too hard, causing chip breakage during ball bonding.
Problem, which increases the incidence of defective products
There is also .
【０００９】[0009]
【００１０】従って、上記添加元素の含有量と総量を上
述の範囲に設定するものである。Ａｕ線はＣｕと、Ｚｎ
又はＷ又はＲｅ又はＰｄの１種又は２種以上とを含有
し、残りはＡｕであるが、そのＡｕは不可避不純物を含
む９９．９９％以上のものである。Therefore, the content and the total amount of the above-mentioned additional elements are increased.
It is set in the range described above . Au wire is Cu and Zn
Or one or more of W, Re, or Pd, and the remainder is Au, which is at least 99.99% containing unavoidable impurities.
【００１１】[0011]
【実施例】以下、具体的な実施例について説明する。Embodiments Hereinafter, specific embodiments will be described.
【００１２】９９．９９９％以上の高純度Ａｕに、Ｃ
ｕ，Ｚｎ，Ｗ，Ｒｅ，Ｐｄを下記表に示す元素含有率に
基づき添加して溶解鋳造し、次に溝ロール加工を施し、
その途中で焼なまし処理を施した後に線引加工で線径３
０μｍの母線に成形し、更に十分な応力除去を行うこと
により各試料とした。[0012] High purity Au of 99.999% or more, C
u, Zn, W, Re , and Pd are added based on the element contents shown in the following table , and are melt-cast, and then subjected to groove roll processing.
After annealing in the middle, wire diameter 3
Each sample was formed by forming a bus bar of 0 μm and removing the stress sufficiently.
【００１３】試料Ｎｏ．１〜２０は、高純度ＡｕにＣ
ｕ，Ｚｎ，Ｗ，Ｒｅ，Ｐｄを本発明の規定範囲添加した
ものであり、試料Ｎｏ．２１は、高純度Ａｕに何も添加
しない比較品である。 Sample No. 1-20 are high purity Au to C
u, Zn, W, Re, Pd were added in the specified range of the present invention.
Sample No. 21 is a comparative product in which nothing is added to high-purity Au.
【００１４】[0014]
【００１５】このようにして作製した各試料により、引
張り試験を行うと共に、２００℃、３００時間の高温放
置試験後にプルテストを所定回数（ｎ＝３２０）ずつ行
い、夫々の常温における伸びを一定にした引張り強さ
（ｇ）と、プル強度（ｇ）を測定すると共に、ボンディ
ングワイヤがチップとの接合面から剥がれた割合をＡ剥
がれ発生率（％）として計算し、これらの結果も表中に
示す。A tensile test was performed on each of the samples thus prepared, and a pull test was performed a predetermined number of times (n = 320) after a high-temperature standing test at 200 ° C. for 300 hours to make the elongation at room temperature constant. The tensile strength (g) and the pull strength (g) were measured, and the rate at which the bonding wire was peeled off from the bonding surface with the chip was calculated as an A peeling occurrence rate (%). These results are also shown in the table. .
【００１６】更に、表中には、評価としてＡ点剥がれ発
生率が１１％以下のものを〇で示すと共に、ボンディン
グ時のチップ割れの有無を示した。Further, in the table , those having an A point peeling rate of 11% or less are evaluated by Δ, and the bond is evaluated.
The presence or absence of chip cracking at the time of grinding was shown.
【００１７】[0017]
【表１】 [Table 1]
【００１８】[0018]
【００１９】[0019]
【００２０】[0020]
【００２１】これら測定結果により、高純度Ａｕに、Ｃ
ｕと、Ｚｎ，Ｗ，Ｒｅ，Ｐｄの中から１種又は２種以上
とを本発明の規定範囲添加すれば、Ａ点剥がれ発生率が
急激に低下して信頼性が向上することが判り、本発明の
組成は前述した範囲で最適であることが理解され、そし
て、これら添加元素の添加合計量を本発明の規定範囲に
すれば、Ａ点剥がれ発生率が１％以下となって更に信頼
性が向上することが判る。また、ボール形成時にボール
が硬くなり過ぎないので、ボールボンディングの際にチ
ップ割れが発生しないことが判る。 Based on the results of these measurements, high purity Au was added to C
u and one or more of Zn, W, Re, and Pd
It is understood that the addition of the specified range of the present invention sharply lowers the rate of occurrence of point A peeling and improves the reliability, and it is understood that the composition of the present invention is optimal within the above-described range, and When the total amount of these additional elements is within the range specified in the present invention, it can be seen that the rate of occurrence of point A peeling is 1% or less, further improving the reliability. Also, when forming the ball
Does not become too hard.
It can be seen that no top crack occurs.
【００２２】[0022]
【発明の効果】本発明は上記の構成であるから、以下の
利点を有する。As described above, the present invention has the following advantages.
【００２３】１．添加元素が熱圧着時においてチップ電
極を形成する下地金属層の金属拡散を適度に抑制し、ボ
ンディング後の高温放置試験においてＡ点剥がれの発生
率を著しく低下できる。1. The additive element appropriately suppresses metal diffusion of the underlying metal layer forming the chip electrode during thermocompression bonding, and can significantly reduce the rate of occurrence of point A peeling in a high-temperature storage test after bonding.
【００２４】即ち、ボールボンディングされる電極の表
面を構成するＡｌ層のＡｌが、ボンディングワイヤの主
成分であるＡｕ中に拡散する（ＡｌがＡｕに喰われる）
ことにより、Ａｌ層のＡｌが不足する状態となるために
接合強度が低下する従来のものに比べ、本発明品では高
温放置試験を行ってもＡ点剥がれが殆ど発生せず、信頼
性を向上できる。That is, Al of the Al layer constituting the surface of the electrode to be ball-bonded diffuses into Au which is the main component of the bonding wire (Al is eaten by Au).
As a result, compared to the conventional case in which the Al strength of the Al layer becomes insufficient and the bonding strength is reduced, the point A peeling hardly occurs in the product of the present invention even when a high temperature storage test is performed, and the reliability is improved. it can.
【００２５】２．ボール形成時にボールが硬くなり過ぎ
ないので、ボールボンディングの際にチップ割れが発生
せず、不良品の発生率が低下できる。2. Since the ball does not become too hard at the time of ball formation, chip breakage does not occur during ball bonding, and the incidence of defective products can be reduced.
フロントページの続き (56)参考文献 特開 平２−215140（ＪＰ，Ａ) 特開 平２−119148（ＪＰ，Ａ) 特開 昭57−90954（ＪＰ，Ａ) 特開 平２−251156（ＪＰ，Ａ) 特開 昭56−13740（ＪＰ，Ａ) 特開 昭56−49534（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 301 Continuation of front page (56) References JP-A-2-215140 (JP, A) JP-A-2-119148 (JP, A) JP-A-57-90954 (JP, A) JP-A-2-251156 (JP, A) JP-A-56-13740 (JP, A) JP-A-56-49534 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/60 301
Claims (1)
０原子ｐｐｍと、Ｚｎ，Ｗ，Ｒｅ及びＰｄの中から１種
又は２種以上を１０００〜１５０００原子ｐｐｍを添加
し、且つこれら添加元素の総量を２０００〜２００００
原子ｐｐｍの範囲として、ボールボンディング時におけ
るチップ電極のＡｌ層のＡｌがＡｕボール中に移行する
金属拡散を適度に制御することを特徴とする半導体素子
のボンディング用Ａｕ線。1. A high-purity Au containing 400 to 1000 Cu
0 atomic ppm and one of Zn, W, Re and Pd
Or add 2 or more kinds at 1000-15000 atomic ppm
And the total amount of these additional elements is 2,000 to 20,000
At the time of ball bonding as the range of atomic ppm
Of the Al layer of the tip electrode migrates into the Au ball
An Au line for bonding a semiconductor element, wherein metal diffusion is appropriately controlled .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3324713A JP3043875B2 (en) | 1991-12-09 | 1991-12-09 | Au wire for bonding semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3324713A JP3043875B2 (en) | 1991-12-09 | 1991-12-09 | Au wire for bonding semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05160184A JPH05160184A (en) | 1993-06-25 |
| JP3043875B2 true JP3043875B2 (en) | 2000-05-22 |
Family
ID=18168878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3324713A Expired - Fee Related JP3043875B2 (en) | 1991-12-09 | 1991-12-09 | Au wire for bonding semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3043875B2 (en) |
-
1991
- 1991-12-09 JP JP3324713A patent/JP3043875B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05160184A (en) | 1993-06-25 |
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