JP3053005B2 - Sample preparation method for secondary ion mass spectrometry - Google Patents
Sample preparation method for secondary ion mass spectrometryInfo
- Publication number
- JP3053005B2 JP3053005B2 JP9176019A JP17601997A JP3053005B2 JP 3053005 B2 JP3053005 B2 JP 3053005B2 JP 9176019 A JP9176019 A JP 9176019A JP 17601997 A JP17601997 A JP 17601997A JP 3053005 B2 JP3053005 B2 JP 3053005B2
- Authority
- JP
- Japan
- Prior art keywords
- measurement target
- sample
- region
- target region
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001004 secondary ion mass spectrometry Methods 0.000 title claims description 17
- 238000005464 sample preparation method Methods 0.000 title claims description 4
- 238000005259 measurement Methods 0.000 claims description 52
- 150000002500 ions Chemical class 0.000 claims description 28
- 238000010884 ion-beam technique Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000009412 basement excavation Methods 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012362 glacial acetic acid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＩＣ、ＬＳＩ等の
不純物分析に広く用いられている二次イオン質量分析法
（以下ＳＩＭＳ）に用いる試料の作成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for preparing a sample used in secondary ion mass spectrometry (SIMS), which is widely used for analyzing impurities such as IC and LSI.
【０００２】[0002]
【従来の技術】従来、ＳＩＭＳを用いての測定対象領域
が周囲に対して凹型形状である試料の深さ方向深さ方向
不純物濃度分布の測定を行う場合、図５（ａ）及び図５
（ａ）のＣ−Ｄ部分の断面図図５（ｂ）に示すように、
一次イオンを周囲に対して１μｍ凹形状となっている面
積３μｍ□である測定対象領域７１に対して図中矢印の
方向から斜めに照射すると、前記測定対象領域７１の側
壁８１に一次イオンが遮られ、前記測定対象領域７１内
の９１の領域にのみイオンが照射されるため、分析領域
を前記９１の領域以外とする必要が生じるがゆえに、検
出感度の低下という問題が生じてしまう。2. Description of the Related Art Conventionally, when measuring the impurity concentration distribution in the depth direction and depth direction of a sample in which the measurement target region has a concave shape with respect to the periphery using SIMS, FIGS.
As shown in FIG.
When the primary ions are irradiated obliquely from the direction of the arrow in the drawing to the measurement target region 71 having an area of 3 μm square which is 1 μm concave with respect to the surroundings, the primary ions are blocked on the side walls 81 of the measurement target region 71. In addition, since only the region 91 in the measurement target region 71 is irradiated with ions, it is necessary to set the analysis region to a region other than the region 91, which causes a problem of a decrease in detection sensitivity.
【０００３】そこで、上記欠点を解決する手段として、
測定対象領域に対して垂直に一次イオンを照射する方法
が用いられている。垂直一次イオン照射では、側壁の影
響を受けないので、分析領域を縮小する必要はなく、検
出感度が低下することはない。[0003] In order to solve the above-mentioned disadvantages,
A method of irradiating a measurement target region with primary ions vertically is used. In the case of vertical primary ion irradiation, since the influence of the side wall is not exerted, the analysis area does not need to be reduced, and the detection sensitivity does not decrease.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、公知
例、ジョン・ワイリー・アンド・サンズ社、１９８９年
刊、「セカンダリー・イオン・マス・スペクトロメトリ
ー」に記載されているように、酸素一次イオンを垂直も
しくはそれに近い角度を用いて照射した場合の、一次イ
オン照射による試料中の測定対象元素のノックオンの影
響に伴うシリコン中ボロン深さ方向分離能は一次イオン
の入射角度を試料の垂直方向に対して７０度とした場合
に比べて、約４倍（約１６ｎｍ）となる。この結果、極
最表面や界面の不純物分布を一次イオンを測定対象領域
に対して垂直に照射して測定した場合には、得られた測
定結果は著しく深さ方向分離能の低下したものとなる。However, as described in a known example, "Secondary Ion Mass Spectrometry", published by John Wiley & Sons, 1989, oxygen primary ions are vertically or When irradiating at an angle close to that, the depth-separation ability of boron in silicon due to the effect of knock-on of the element to be measured in the sample by the irradiation of the primary ion, the incident angle of the primary ion is set to 70 with respect to the vertical direction of the sample. It is about 4 times (about 16 nm) as compared with the case where the degree is set as the degree. As a result, when the impurity distribution at the extreme outermost surface or interface is measured by irradiating the primary ions perpendicularly to the measurement target region, the obtained measurement result has a significantly reduced depth direction separation ability. .
【０００５】本発明は上記の問題点を解決する手段とし
て、測定対象領域が周辺に対して凹である試料に対して
も深さ方向分離能の良い一次イオン斜入射の条件を用い
てＳＩＭＳ測定を行うことの可能な試料作製方法を提供
することを目的としている。According to the present invention, as a means for solving the above-mentioned problems, SIMS measurement is performed on a sample whose measurement target area is concave with respect to the periphery by using conditions of oblique incidence of primary ions having a good resolution in the depth direction. It is an object of the present invention to provide a sample preparation method capable of performing the following.
【０００６】[0006]
【課題を解決するための手段】前記の目的は以下の手段
によって達成される。The above object is achieved by the following means.
【０００７】すなわち、本発明は、二次イオン質量分析
法において、被測定試料の測定対象領域が周囲に対し凹
形状である場合において、前記測定対象領域全体に斜め
方向から一次イオンビームが照射出来るように前記測定
領域の前記一次イオンの入射方向の側面をエッチングに
よって掘削することを特徴とする二次イオン質量分析用
試料作製方法を提案するものであり、予め前記測定対象
領域がエッチングされないように前記測定対象領域上及
びその周囲に保護膜を堆積してから前記測定対象領域側
面をエッチングすること、前記測定対象領域側面をエッ
チングする方法が集束イオンビーム法とウェットエッチ
ング法の組み合わせであることを含む。本発明によれ
ば、測定対象領域が周囲に対して凹である試料のＳＩＭ
Ｓにおける一次イオン入射方向に対応する側壁を除去す
ることによって、斜入射で一次イオンを照射した場合に
おいても斜入射で一次イオンが遮られることがないの
で、前記測定対象領域全体に一次イオンを照射すること
ができ、一次イオン照射に伴うノックオン効果の影響の
少ない深さ方向不純物濃度分布を得ることができる。That is, according to the present invention, in the secondary ion mass spectrometry, when the measurement target region of the sample to be measured is concave with respect to the surroundings, the entire measurement target region can be irradiated with the primary ion beam from an oblique direction. It is intended to propose a sample preparation method for secondary ion mass spectrometry characterized by excavating the side surface of the primary ion in the incident direction of the measurement region by etching, so that the measurement target region is not etched in advance. Etching the side surface of the measurement region after depositing a protective film on and around the measurement region, that the method of etching the side surface of the measurement region is a combination of a focused ion beam method and a wet etching method. Including. According to the present invention, the SIM of a sample whose measurement target area is concave with respect to the surroundings
By removing the side wall corresponding to the primary ion incident direction in S, even when the primary ions are irradiated at the oblique incidence, the primary ions are not obstructed by the oblique incidence, so that the entire primary target area is irradiated with the primary ions. And an impurity concentration distribution in the depth direction with less influence of the knock-on effect accompanying the primary ion irradiation can be obtained.
【０００８】[0008]
【発明の実施の形態】以下、本発明を実施例により更に
具体的に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described more specifically with reference to examples.
【０００９】[0009]
実施例１ 本発明の第１の実施例について図面を参照して説明す
る。図１（ａ）は被測定試料及び被測定領域を示す平面
図、図１（ｂ）は図１（ａ）のＡ−Ｂ部分の断面図、図
２（ａ）〜（ｅ）は、ＳＩＭＳ測定を行うための前記試
料の加工工程を示した図である。Embodiment 1 A first embodiment of the present invention will be described with reference to the drawings. 1A is a plan view showing a sample to be measured and a region to be measured, FIG. 1B is a cross-sectional view taken along a line AB in FIG. 1A, and FIGS. 2A to 2E are SIMS. FIG. 3 is a diagram showing a processing step of the sample for performing measurement.
【００１０】図１（ａ）に示すように、試料はシリコン
基板１内に周囲に対して１μｍ凹である３μｍ□の測定
対象領域２が存在するものである。前記測定対象領域２
の不純物の深さ方向濃度の分布を図１の（ｂ）中の矢印
の方向から前記試料の垂直方向に対して７０度で一次イ
オンビームを照射することによってＳＩＭＳ測定を行う
ために、図２（ａ）に示すように、成長温度５００℃で
前記試料上にシリコン酸化膜３を０．１μｍ成長させ
る。次に、平面図図２（ｂ）に示すように測定対象領域
２の前記一次イオンビームが入射する側の辺４に対し平
行に辺４から０．５μｍ離して設定した３μｍ□の領域
５を集束イオンビーム装置（ＦＩＢ）を用いて約１．５
μｍ掘削する。この結果、前記試料は図２（ｂ）のＡ′
−Ｂ′領域の断面図である図２（ｃ）に示すように領域
５とシリコン酸化膜３の間に厚さ０．５μｍ以下のＦＩ
Ｂ掘削によって残存した側壁６が残存するので、組成が
４９％フッ化水素酸：７０％硝酸：氷酢酸＝２：１５：
８３の溶液を用いて前記側壁６を除去し図２（ｄ）に示
すような断面構造を得、さらにフッ化水素酸緩衝液を用
いてシリコン酸化膜３を除去することによって図２
（ｅ）に示すような入射角が試料の垂直方向に対して７
０度の一次イオン照射を用いても従来の一次イオン垂直
入射で測定を行う場合と等しい分析領域が確保出来る試
料を作成することが出来た。As shown in FIG. 1A, a sample has a 3 μm square measurement target area 2 which is 1 μm concave with respect to the surroundings in a silicon substrate 1. The measurement target area 2
In order to perform SIMS measurement by irradiating the primary ion beam at 70 degrees from the direction of the arrow in FIG. As shown in (a), a silicon oxide film 3 is grown on the sample at a growth temperature of 500 ° C. by 0.1 μm. Next, as shown in FIG. 2B, a 3 μm square region 5 set at 0.5 μm away from the side 4 in parallel with the side 4 of the measurement target region 2 on which the primary ion beam is incident. About 1.5 using a focused ion beam device (FIB)
Excavate μm. As a result, the sample was A ′ in FIG.
As shown in FIG. 2C, which is a cross-sectional view of the -B 'region, an FI having a thickness of 0.5 .mu.m or less is formed between the region 5 and the silicon oxide film 3.
Since the side wall 6 remaining by excavation B remains, the composition is 49% hydrofluoric acid: 70% nitric acid: glacial acetic acid = 2: 15:
2D is obtained by removing the side wall 6 by using the solution 83, and the silicon oxide film 3 is removed by using a hydrofluoric acid buffer solution as shown in FIG.
The incident angle as shown in FIG.
Even when the primary ion irradiation at 0 degree was used, it was possible to prepare a sample capable of securing the same analysis area as in the case of performing the measurement at the normal primary ion vertical incidence.
【００１１】実施例２ 本発明の第２の実施例について図面を参照して説明す
る。図３（ａ）は被測定試料及び被測定領域を示す平面
図、図３（ｂ）は図３（ａ）のＣ−Ｄ部分の断面図、図
４（ａ）〜（ｅ）は、ＳＩＭＳ測定を行うための前記試
料の加工工程を示した図である。Embodiment 2 A second embodiment of the present invention will be described with reference to the drawings. FIG. 3A is a plan view showing a sample to be measured and a region to be measured, FIG. 3B is a cross-sectional view taken along a line CD of FIG. 3A, and FIGS. 4A to 4E are SIMS. FIG. 3 is a diagram showing a processing step of the sample for performing measurement.
【００１２】図３（ａ）に示すように、試料はシリコン
基板１１内に周囲に対して１μｍ凹である２μｍ□の測
定対象領域２１が存在するものである。前記測定対象領
域２１の不純物の深さ方向濃度の分布を図３の（ｂ）中
の矢印の方向から前記試料の垂直方向に対して７０度で
一次イオンビームを照射することによってＳＩＭＳ測定
を行うために、図４（ａ）に示すように前記試料を成長
温度５００℃で前記試料上にシリコン酸化膜３１を０．
１μｍ成長させる。次に、平面図図４（ｂ）に示すよう
に測定対象領域２１の前記一次イオンビームが入射する
側の辺４１に対し平行に辺４１から０．５μｍ離して設
定した２μｍ□の領域５１を集束イオンビーム装置（Ｆ
ＩＢ）を用いてイオンビーム照射に伴い発生する二次電
子の強度をモニターしながら掘削し、二次電子強度の変
化した時点で掘削を停止することによって図４Ｃ′−
Ｄ′領域の断面図は図４（ｃ）に示すようになる。ＦＩ
Ｂ装置による二次電子のフィールドはシリコン基板とシ
リコン酸化膜で異なるので、前記の二次電子強度の変化
した時点はシリコン酸化膜とシリコン基板の界面に相当
する。As shown in FIG. 3A, the sample has a 2 μm square measurement target area 21 which is 1 μm concave with respect to the surroundings in the silicon substrate 11. SIMS measurement is performed by irradiating the primary ion beam at 70 degrees from the direction of the arrow in FIG. As shown in FIG. 4 (a), the silicon oxide film 31 was formed on the sample at a growth temperature of 500.degree.
Grow 1 μm. Next, as shown in FIG. 4B, a 2 μm square region 51 set at 0.5 μm away from the side 41 in parallel with the side 41 of the measurement target region 21 on which the primary ion beam is incident. Focused ion beam device (F
IB), the excavation is performed while monitoring the intensity of the secondary electrons generated by the irradiation of the ion beam, and the excavation is stopped when the intensity of the secondary electrons changes.
FIG. 4C is a sectional view of the D 'region. FI
Since the field of the secondary electrons by the B apparatus is different between the silicon substrate and the silicon oxide film, the time when the intensity of the secondary electrons changes corresponds to the interface between the silicon oxide film and the silicon substrate.
【００１３】次に、前記試料を組成が４９％フッ化水素
酸：７０％硝酸：氷酢酸＝２：１４：８３の溶液を用い
て３分エッチングを行うと、図４（ｄ）に示すように深
さ約０．９μｍエッチングされ、かつ、横方向にもエッ
チングされる。しかしながら、上記溶液はシリコン酸化
膜対してはシリコン基板の１／３０程度のエッチング速
度であるがゆえに、横方向のエッチングはシリコン酸化
膜３１中で停止する。次にフッ化水素酸緩衝液を用いて
シリコン酸化膜３１を除去すると、領域５１は図４
（ｅ）に示すように測定対象領域２１に対し０．１μｍ
凸になるが、一次イオンの入射角を試料の垂直方向に対
して７０度で測定対象領域２１に照射した場合の領域５
１によって一次イオンビームが遮られる面積は、測定対
象領域２１の面積の約７％にすぎず、感度低下の影響は
測定のバラツキの範囲内であり実際の測定を行う上での
障害にはならない。従って、実施例１とほぼ同等の効果
を持つ斜め入射一次イオン照射を用いても側壁の影響を
受けないＳＩＭＳ測定用試料作成することが出来た。Next, when the sample is etched for 3 minutes using a solution having a composition of 49% hydrofluoric acid: 70% nitric acid: glacial acetic acid = 2: 14: 83, as shown in FIG. Is etched to a depth of about 0.9 μm and also in the lateral direction. However, since the above solution has an etching rate of about 1/30 of that of the silicon substrate with respect to the silicon oxide film, the lateral etching stops in the silicon oxide film 31. Next, when the silicon oxide film 31 is removed using a hydrofluoric acid buffer solution,
(E) As shown in FIG.
Although it becomes convex, the region 5 when the incident angle of the primary ions is irradiated to the measurement target region 21 at 70 degrees with respect to the vertical direction of the sample.
The area where the primary ion beam is blocked by 1 is only about 7% of the area of the measurement target area 21, and the effect of the sensitivity drop is within the range of measurement variation, and does not hinder actual measurement. . Therefore, it was possible to prepare a sample for SIMS measurement which is not affected by the side wall even when obliquely incident primary ion irradiation having substantially the same effect as in Example 1 is used.
【００１４】[0014]
【発明の効果】以上の説明のように、測定対象領域上シ
リコン酸化膜を成長させ、さらに、ＳＩＭＳ測定におけ
る一次イオンビームの入射方向に対応する前記測定対象
領域上の一辺の平行に設定した領域を掘削及びエッチン
グし、最後にシリコン酸化膜を除去することによって、
測定対象領域が周囲に対して凹である試料においても、
垂直入射に比べ深さ方向分解能の優れた斜入射一次イオ
ン照射によるＳＩＭＳ測定結果を得ることが出来る。As described above, the silicon oxide film is grown on the measurement target region, and the region set in parallel with one side on the measurement target region corresponding to the incident direction of the primary ion beam in the SIMS measurement. Drilling and etching, and finally removing the silicon oxide film,
Even in a sample whose measurement target area is concave with respect to the surroundings,
SIMS measurement results by oblique incidence primary ion irradiation with better depth direction resolution than normal incidence can be obtained.
【図１】本発明の第１の実施例を実施前の試料の被測定
領域を示す平面図及び断面図である。FIGS. 1A and 1B are a plan view and a cross-sectional view illustrating a measurement region of a sample before a first embodiment of the present invention is performed.
【図２】本発明の第１の実施例における試料の加工工程
を示した説明図である。FIG. 2 is an explanatory view showing a sample processing step in the first embodiment of the present invention.
【図３】本発明の第２の実施例を実施前の試料の被測定
領域を示す平面図及び断面図である。FIGS. 3A and 3B are a plan view and a cross-sectional view illustrating a measurement region of a sample before a second embodiment of the present invention is performed.
【図４】本発明の第２の実施例における試料の加工工程
を示した説明図である。FIG. 4 is an explanatory view showing a sample processing step in a second embodiment of the present invention.
【図５】本発明未実施の場合に測定対象領域に対し斜入
射でイオンを照射した場合の前記測定対象領域中の一次
イオン照射領域を示した平面図及び断面図である。5A and 5B are a plan view and a cross-sectional view illustrating a primary ion irradiation region in the measurement target region when the measurement target region is irradiated with ions at oblique incidence in a case where the present invention is not implemented.
１、１１ シリコン基板 ２、２１ 測定対象領域 ３、３１ シリコン酸化膜 ４、４１ 測定対象領域を構成する一次イオン入射方
向の一辺 ５、５１ 掘削領域 ６ ＦＩＢ掘削によって残存した側壁 ７１ 測定対象領域 ８１ 側壁 ９１ 本発明未実施の場合において測定対象領域に対
し斜入射で一次イオンを照射した場合の一次イオン照射
領域DESCRIPTION OF SYMBOLS 1, 11 Silicon substrate 2, 21 Measurement target area 3, 31 Silicon oxide film 4, 41 One side of primary ion incidence direction constituting measurement target area 5, 51 Excavation area 6 Side wall remaining by FIB excavation 71 Measurement target area 81 Side wall 91 Primary ion irradiation area when the measurement target area is irradiated with primary ions at oblique incidence in the case where the present invention is not implemented
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G01N 23/225 G01N 1/32 H01L 21/66 ＪＩＣＳＴファイル（ＪＯＩＳ)──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int.Cl. 7 , DB name) G01N 23/225 G01N 1/32 H01L 21/66 JICST file (JOIS)
Claims (3)
試料の測定対象領域が周囲に対し凹形状である場合にお
いて、前記測定対象領域全体に斜め方向から一次イオン
ビームが照射出来るように前記測定領域の前記一次イオ
ンの入射方向の側面をエッチングによって掘削すること
を特徴とする二次イオン質量分析用試料作製方法。In a secondary ion mass spectrometry, when a measurement target region of a sample to be measured has a concave shape with respect to the periphery, the measurement is performed so that a primary ion beam can be irradiated from an oblique direction to the entire measurement target region. A method for preparing a sample for secondary ion mass spectrometry, wherein a side surface of a region in the incident direction of the primary ions is excavated by etching.
ないように前記測定対象領域上及びその周囲に保護膜を
堆積してから前記測定対象領域側面をエッチングする請
求項１記載の二次イオン質量分析用試料作製方法。2. The secondary ion mass spectrometer according to claim 1, wherein a protective film is deposited on and around the measurement target region in advance so that the measurement target region is not etched, and then a side surface of the measurement target region is etched. Sample preparation method.
方法が集束イオンビーム法とウェットエッチング法の組
み合わせである請求項１記載の二次イオン質量分析用試
料作製方法。3. The method for preparing a sample for secondary ion mass spectrometry according to claim 1, wherein the method of etching the side surface of the measurement target region is a combination of a focused ion beam method and a wet etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9176019A JP3053005B2 (en) | 1997-07-01 | 1997-07-01 | Sample preparation method for secondary ion mass spectrometry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9176019A JP3053005B2 (en) | 1997-07-01 | 1997-07-01 | Sample preparation method for secondary ion mass spectrometry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1123497A JPH1123497A (en) | 1999-01-29 |
| JP3053005B2 true JP3053005B2 (en) | 2000-06-19 |
Family
ID=16006309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9176019A Expired - Lifetime JP3053005B2 (en) | 1997-07-01 | 1997-07-01 | Sample preparation method for secondary ion mass spectrometry |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3053005B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845591B (en) * | 2015-01-16 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | A kind of method of monitoring ion implantation angle |
-
1997
- 1997-07-01 JP JP9176019A patent/JP3053005B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1123497A (en) | 1999-01-29 |
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