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JP3063618B2 - Electrode substrate for display device - Google Patents
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JP3063618B2 - Electrode substrate for display device - Google Patents

Electrode substrate for display device

Info

Publication number
JP3063618B2
JP3063618B2 JP11906596A JP11906596A JP3063618B2 JP 3063618 B2 JP3063618 B2 JP 3063618B2 JP 11906596 A JP11906596 A JP 11906596A JP 11906596 A JP11906596 A JP 11906596A JP 3063618 B2 JP3063618 B2 JP 3063618B2
Authority
JP
Japan
Prior art keywords
thin film
oxide
silver
conductive thin
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11906596A
Other languages
Japanese (ja)
Other versions
JPH09305126A (en
Inventor
健蔵 福吉
幸弘 木村
修 古賀
孝二 今吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Inc filed Critical Toppan Inc
Priority to JP11906596A priority Critical patent/JP3063618B2/en
Publication of JPH09305126A publication Critical patent/JPH09305126A/en
Application granted granted Critical
Publication of JP3063618B2 publication Critical patent/JP3063618B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Parts Printed On Printed Circuit Boards (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶ディスプレイ
装置やプラズマディスプレイ装置などの出力表示装置あ
るいは表示画面から直接入力する入出力用表示装置ある
いは太陽電池などに使用される透過型電極(透明電極)
や反射型電極の電極基板に関し、特に薄膜で導電性と光
線透過率が高く、しかも保存安定性に優れた電極基板に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transmission type electrode (transparent electrode) used for an output display device such as a liquid crystal display device or a plasma display device, an input / output display device for directly inputting from a display screen, a solar cell or the like.
In particular, the present invention relates to an electrode substrate which is thin and has high conductivity and high light transmittance and excellent storage stability.

【0002】[0002]

【従来の技術】ガラス、プラスチックフィルムなどの基
板上に、可視光線を透過する電極形状の透明導電膜が設
けられた電極板は、液晶ディスプレイ装置などの各種表
示装置(表示画面)の表示用電極や、この表示装置の表
示画面から直接入力できる入出力電極などに広く使用さ
れている。
2. Description of the Related Art An electrode plate in which a transparent conductive film in the form of an electrode that transmits visible light is provided on a substrate such as a glass or plastic film is used as a display electrode of various display devices (display screens) such as a liquid crystal display device. Also, it is widely used for input / output electrodes that can be directly input from the display screen of this display device.

【0003】例えば、液晶が用いられたディスプレイ装
置の透明電極板は、図12に示すように、ガラス基板3
0と、このガラス基板30上の画素部位に設けられ、画
素毎にその透過光を赤、緑、青にそれぞれ着色するカラ
ーフィルタ層31と、上記ガラス基板30上の画素と画
素との間(画素間)の部位に設けられ、この部位からの
光透過を防止する遮光膜32と、上記カラーフィルタ層
31上の全面に設けられた透明保護層33と、この保護
層33上にスパッタリングにより成膜され、所定の電極
パターンにエッチングされたパターン状若しくはベタ状
の透明電極34と、この透明電極34上に成膜された配
向膜35とでその主要部が構成されている。
For example, as shown in FIG. 12, a transparent electrode plate of a display device using liquid crystal has a glass substrate 3
0, a color filter layer 31 provided at a pixel portion on the glass substrate 30 and coloring transmitted light into red, green, and blue for each pixel, and a color filter layer 31 between the pixels on the glass substrate 30 ( (Between pixels), a light-shielding film 32 for preventing light transmission from this part, a transparent protective layer 33 provided on the entire surface of the color filter layer 31, and a sputtering layer formed on the protective layer 33. The main part is composed of a patterned or solid transparent electrode 34 which is formed and etched into a predetermined electrode pattern, and an alignment film 35 formed on the transparent electrode 34.

【0004】この透明電極34としては、その高い導電
性に着目して、酸化インジウム中に酸化錫を添加したI
TO薄膜が広く利用されており、その比抵抗はおよそ
2.4×10-4Ω・cmで、透明電極として通常適用さ
れる240nmの膜厚の場合、その面積抵抗値は、およ
そ10Ω(又は10Ω/□、□;スクエアと称する)で
ある。また、この他にも酸化錫薄膜や、酸化錫に酸化ア
ンチモンを添加して構成される薄膜(ネサ膜)、あるい
は酸化亜鉛に酸化アルミニウムを添加して構成される薄
膜などが知られているが、これらはいずれも上記ITO
薄膜よりも導電性が劣り、また酸やアルカリに対する耐
薬品性あるいは耐水性などが不十分なために一般には普
及していない。
[0004] Focusing on the high conductivity, the transparent electrode 34 is made of Idium obtained by adding tin oxide to indium oxide.
A TO thin film is widely used, and its specific resistance is about 2.4 × 10 −4 Ω · cm. In the case of a film thickness of 240 nm which is usually applied as a transparent electrode, its area resistance value is about 10 Ω (or 10Ω / □, □; square). In addition, a tin oxide thin film, a thin film formed by adding antimony oxide to tin oxide (a Nesa film), and a thin film formed by adding aluminum oxide to zinc oxide are known. , These are all the above ITO
It is not widely used because it has poorer conductivity than thin films and has insufficient chemical resistance or water resistance against acids and alkalis.

【0005】一方、1982年、日本で開催された第7
回ICVMにおいて、熱線反射膜として銀薄膜の表裏面
にITO薄膜又は酸化インジウム薄膜(IO薄膜)を積
層させて構成される3層構造の透明導電膜が提案されて
いる。この3層構造の透明導電膜はおよそ5Ω程度の低
い面積抵抗値を有しており、その高い導電性を生かして
上記透明電極への応用が期待された。
On the other hand, in 1982, the 7th
In the ICVM, a transparent conductive film having a three-layer structure has been proposed in which an ITO thin film or an indium oxide thin film (IO thin film) is laminated on the front and back surfaces of a silver thin film as a heat ray reflective film. The transparent conductive film having the three-layer structure has a low sheet resistance value of about 5Ω, and is expected to be applied to the transparent electrode by utilizing its high conductivity.

【0006】[0006]

【発明が解決しようとする課題】ところで、上記ディス
プレイ装置や入出力装置においては、近年、画素密度を
増大させて緻密な画面を表示することが求められ、これ
に伴って上記透明電極パターンの緻密化が要求されてお
り、例えば100μm程度のピッチで上記透明電極の端
子部を構成することが要求されている。また、液晶ディ
スプレイ装置において基板に液晶駆動用ICが直接接続
される方式(COG)においては、配線の引き回しが、
幅20〜50μmという細線となる部分があり、従来に
ない高度のエッチング加工適性と高い導電性(低い抵抗
値)が要求されている。
In the above-mentioned display devices and input / output devices, it has recently been required to increase the pixel density and display a fine screen. For example, it is required that the terminal portions of the transparent electrode be formed at a pitch of about 100 μm. Further, in a system (COG) in which a liquid crystal driving IC is directly connected to a substrate in a liquid crystal display device, wiring routing is difficult.
There is a part of a thin line having a width of 20 to 50 μm, and a high degree of suitability for etching and a high conductivity (low resistance) are required.

【0007】また、その一方で表示画面の大型化も求め
られており、このような大型画面化について、上述した
ような緻密パターンの透明電極を形成し、しかも液晶に
十分な駆動電圧を印加できるようにするためには、上記
透明電極として面積抵抗値5Ω以下という高い導電性を
備えた透明電極を適用する必要があった。また、これに
加えて、STN液晶等を利用した単純マトリクス駆動方
式の液晶表示装置において、16階調以上の多階調表示
を行う場合には、3Ω以下というさらに低い面積抵抗値
が要求されている。
On the other hand, on the other hand, a large display screen is also required. For such a large screen, a transparent electrode having a dense pattern as described above is formed, and a sufficient driving voltage can be applied to the liquid crystal. In order to achieve this, it is necessary to apply a transparent electrode having a high conductivity of a sheet resistance of 5Ω or less as the transparent electrode. In addition, in a simple matrix driving type liquid crystal display device using an STN liquid crystal or the like, when a multi-gradation display of 16 gradations or more is performed, a lower sheet resistance value of 3Ω or less is required. I have.

【0008】しかしながら、第7回ICVMにおいて提
案された上記3層構造の透明電極においても、高々5Ω
程度の面積抵抗値が得られるに過ぎず、十分な導電性が
確保できないという問題点があり、例えば、銀薄膜の厚
さを16〜18nm程度に厚くすることにより、その面
積抵抗値を約3Ωに低下させることは可能であっても、
可視光線透過率(特に波長610nm程度の長波長側の
可視光線透過率)が75%程度まで低下し、透明電極と
しての機能が損なわれてしまう。
However, the transparent electrode having the three-layer structure proposed in the 7th ICVM also has a maximum resistance of 5Ω.
However, there is a problem that sufficient conductivity cannot be ensured, and for example, by increasing the thickness of the silver thin film to about 16 to 18 nm, the area resistance becomes about 3Ω. Although it is possible to lower
The visible light transmittance (especially the visible light transmittance on the long wavelength side of about 610 nm) is reduced to about 75%, and the function as a transparent electrode is impaired.

【0009】さらに、上記3層構造の透明電極において
は、銀の薄膜が積層海面などから進入した空気中の水分
と反応し易く、その表面に反応物を生成してシミ状の欠
陥を生じ、例えば液晶表示装置の透明電極に適用した場
合には、その表面に表示欠陥などを生じ易いという問題
点があった。
Further, in the transparent electrode having the three-layer structure, the silver thin film easily reacts with moisture in the air that has entered from the surface of the laminated sea or the like, and generates a reaction product on the surface to cause spot-like defects. For example, when applied to a transparent electrode of a liquid crystal display device, there is a problem that a display defect or the like is easily generated on the surface.

【0010】また、近年、偏光板を用いない、あるいは
1枚の偏光板(通常TN型、STN型、ECB型、OC
B型などの液晶表示装置では2枚の偏光板を用いる)の
みによる反射型液晶表示装置が注目されている。
In recent years, a polarizing plate is not used, or a single polarizing plate (usually TN type, STN type, ECB type, OCB type) is used.
Attention has been focused on a reflection type liquid crystal display device using only a B-type liquid crystal display device using two polarizing plates).

【0011】加えて、液晶セル内に、光の反射板と表示
電極の機能を併せ持たせてコストダウンを図るようにし
た反射型電極を配設した反射型液晶表示装置の開発が進
められている。
In addition, the development of a reflection type liquid crystal display device in which a reflection type electrode having a function of a light reflection plate and a display electrode in the liquid crystal cell to reduce the cost is arranged has been promoted. I have.

【0012】本発明者らは、可視領域のほぼ全域に亘っ
てアルミニウム薄膜よりも光の反射率の高い銀系薄膜
を、反射電極として用いることを提案している。この銀
系薄膜は、空気中のイオウ化合物と化合してその表面に
硫化物が生成され、反射率が低下し易い問題があり、こ
の銀系薄膜の硫化を防ぐため、銀系薄膜上に透明酸化物
の薄膜を積層する方法はきわめて有効である。
The present inventors have proposed to use a silver-based thin film having a higher light reflectance than an aluminum thin film over almost the entire visible region as a reflective electrode. This silver-based thin film has a problem that sulfides are formed on the surface of the silver-based thin film by being combined with a sulfur compound in the air, and the reflectivity is easily lowered. The method of laminating oxide thin films is extremely effective.

【0013】しかし、銀系薄膜上に透明酸化物の薄膜を
光学条件を考慮せずに積層すると、反射光が黄色やピン
ク色に着色して、反射型液晶表示装置の表示品位を大き
く落としてしまう問題があった。また、反射電極におい
ても、上述した3層構造の透明電極と同様に、耐湿性が
低く、放置しておくだけでも湿気によってシミが発生す
るという欠点があった。
However, when a transparent oxide thin film is laminated on a silver-based thin film without considering optical conditions, the reflected light is colored yellow or pink, greatly deteriorating the display quality of the reflective liquid crystal display device. There was a problem. Further, the reflective electrode also has a drawback that, similarly to the above-mentioned transparent electrode having a three-layer structure, it has low moisture resistance, and stains are generated by moisture even when left alone.

【0014】本発明は、このような問題点に着目してな
されたものであって、その課題とするところは、薄膜で
導電性と可視光線透過率又は反射率が高く、しかも経時
劣化がなく保存安定性に優れた透過型又は反射型の表示
装置用電極基板を提供することにある。
The present invention has been made in view of such a problem, and it is an object of the present invention to provide a thin film having high conductivity and high visible light transmittance or reflectance, and without deterioration with time. An object of the present invention is to provide a transmission-type or reflection-type display device electrode substrate having excellent storage stability.

【0015】[0015]

【課題を解決するための手段】本発明は、上記課題を解
決するための手段として、2つの手法を併用することで
あり、その1つは、銀系薄膜の銀に少量の金と銅を添加
し、銀の性状を抑えることであり、もう1つは、透明酸
化物の薄膜を非晶質化し、銀の粒界拡散(銀は酸化物の
結晶間での粒界拡散を起こし易い)を無くすことであ
る。
According to the present invention, as a means for solving the above-mentioned problems, two techniques are used in combination, and one of them is to add a small amount of gold and copper to silver of a silver-based thin film. The addition is to suppress the properties of silver, and the other is to make the thin film of the transparent oxide amorphous, and to diffuse the grain boundaries of silver (silver tends to cause grain boundary diffusion between oxide crystals). Is to eliminate.

【0016】即ち本発明の請求項1に係る発明は、基板
上に導電性接着層と銀系導電薄膜層と酸化物系透明導電
薄膜層とをこの順に積層せしめた電極基板において、銀
系導電薄膜層が0.1〜2.5at%の金及び0.3〜
3.0at%の銅を添加した銀合金により形成され、酸
化物系透明導電薄膜層が非晶質物質により形成されてい
ることを特徴とする表示装置用電極基板である。
That is, according to the first aspect of the present invention, there is provided an electrode substrate in which a conductive adhesive layer, a silver-based conductive thin film layer, and an oxide-based transparent conductive thin film layer are laminated on a substrate in this order. The thin film layer is 0.1 to 2.5 at% gold and 0.3 to
An electrode substrate for a display device, comprising: a silver alloy to which 3.0 at% of copper is added; and an oxide-based transparent conductive thin film layer formed of an amorphous substance.

【0017】また請求項2に係る発明は、上記発明の表
示装置用電極基板において、前記銀系導電薄膜層の層厚
が50〜200nmの範囲内にあり、且つ酸化物系透明
導電薄膜層の層厚が40〜100nmの範囲内にある表
示装置用電極基板である。
According to a second aspect of the present invention, in the electrode substrate for a display device according to the above invention, the thickness of the silver-based conductive thin film layer is in the range of 50 to 200 nm, and the thickness of the oxide-based transparent conductive thin film layer is It is a display device electrode substrate having a layer thickness in the range of 40 to 100 nm.

【0018】また請求項3に係る発明は、上記発明の表
示装置用電極基板において、前記銀系導電薄膜層の層厚
が5〜25nmの範囲内にあって、前記導電性接着層が
前記酸化物系透明導電薄膜層と同種の酸化物を含有する
表示装置用電極基板である。
According to a third aspect of the present invention, in the electrode substrate for a display device according to the first aspect of the present invention, the silver-based conductive thin film layer has a thickness in a range of 5 to 25 nm, and the conductive adhesive layer is It is an electrode substrate for a display device containing the same type of oxide as the material-based transparent conductive thin film layer.

【0019】また請求項4に係る発明は、上記発明の表
示装置用電極基板において、前記導電性接着層及び酸化
物系透明導電薄膜層の全体若しくは一部が、屈折率2.
1より大きい酸化物を含有する表示装置用電極基板であ
る。
According to a fourth aspect of the present invention, in the electrode substrate for a display device of the present invention, the whole or a part of the conductive adhesive layer and the oxide-based transparent conductive thin film layer has a refractive index of 2.
1 is an electrode substrate for a display device containing an oxide larger than 1.

【0020】また請求項5に係る発明は、上記発明の表
示装置用電極基板において、前記導電性接着層及び酸化
物系透明導電薄膜層が、酸化セリウムと酸化チタンのう
ちいずれか一方若しくは両方より選ばれた酸化物を含有
する表示装置用電極基板である。
According to a fifth aspect of the present invention, in the electrode substrate for a display device of the above invention, the conductive adhesive layer and the oxide-based transparent conductive thin film layer are made of one or both of cerium oxide and titanium oxide. It is an electrode substrate for a display device containing a selected oxide.

【0021】また請求項6に係る発明は、上記発明の表
示装置用電極基板において、前記導電性接着層及び酸化
物系透明導電薄膜層が、酸化インジウムを含有する表示
装置用電極基板である。
According to a sixth aspect of the present invention, in the electrode substrate for a display device according to the invention, the conductive adhesive layer and the oxide-based transparent conductive thin film layer contain indium oxide.

【0022】[0022]

【発明の実施の形態】本発明の請求項1に係る発明を、
実施の形態にしたがって以下に詳細に説明する。
BEST MODE FOR CARRYING OUT THE INVENTION
This will be described in detail below according to the embodiment.

【0023】本発明の請求項1に係る発明は、基板上に
導電性接着層と銀系導電薄膜層と酸化物系透明導電薄膜
層とをこの順に積層せしめた電極基板において、銀系導
電薄膜層が0.1〜2.5at%(以下atomic
weight%、原子量パーセントをat%と称する)
の金及び0.3〜3.0at%の銅を添加した銀合金に
より形成され、酸化物系透明導電薄膜層が非晶質物質に
より形成されている表示装置用電極基板である。
According to a first aspect of the present invention, there is provided an electrode substrate in which a conductive adhesive layer, a silver-based conductive thin film layer, and an oxide-based transparent conductive thin film layer are laminated on a substrate in this order. The layer is 0.1 to 2.5 at% (hereinafter atomic
weight%, atomic weight percent is referred to as at%)
This is a display device electrode substrate formed of a silver alloy to which gold and 0.3 to 3.0 at% of copper are added, and an oxide-based transparent conductive thin film layer formed of an amorphous substance.

【0024】上記基板上における上記銀系導電薄膜層へ
の金の添加量は、3層構造の導電膜である導電性接着
層、銀系導電薄膜層、酸化物系透明導電薄膜層のそれぞ
れ耐湿性の向上に関しては、0.1at%の少量添加か
ら効力があり、この添加量を多くするに従って耐湿性が
向上する傾向がある。
The amount of gold to be added to the silver-based conductive thin-film layer on the substrate is such that the conductive adhesive layer, the silver-based conductive thin-film layer, and the oxide-based transparent conductive thin-film layer, each of which has a three-layer structure, have moisture resistance. Regarding the improvement of the properties, the effect is effective from the addition of a small amount of 0.1 at%, and the moisture resistance tends to improve as the addition amount increases.

【0025】但し、金の添加量が多くなると導電膜とし
ての抵抗値が上昇し、且つ2.5at%以上とすると導
電膜のエッチング加工時に残滓が残り易くなるため、適
宜な添加量の調整が必要である。
However, if the amount of gold added is large, the resistance value of the conductive film increases, and if it is 2.5 at% or more, residues are likely to remain during the etching of the conductive film. is necessary.

【0026】銀系導電薄膜層への銅の添加は、上記した
ように耐湿性向上に寄与するとともに、銀(Ag)の
み、又はAg−Au(金)の2元素では、スパッタリン
グ成膜時のガス雰囲気中の酸素の影響を受けて成膜厚さ
や成膜後の透過率などに変動が生じ易いが、銅(Cu)
を添加すると凹みが無くなり、従って雰囲気の影響を受
け難くなり、特に銀系導電薄膜層の成膜時のマージン
(成膜条件などの許容量)を拡げる効力がある。
The addition of copper to the silver-based conductive thin film layer contributes to the improvement of the moisture resistance as described above, and the addition of silver (Ag) alone or two elements of Ag-Au (gold) during sputtering film formation. The thickness of the film and the transmittance after the film are easily changed by the influence of oxygen in the gas atmosphere.
Addition eliminates dents and is therefore less susceptible to the effects of the atmosphere, and is particularly effective in increasing the margin (allowable amount of film formation conditions, etc.) when forming the silver-based conductive thin film layer.

【0027】具体的には、銀系導電薄膜層の成膜時の導
入ガスあるいはバックグランドに酸素が多く存在する
と、波長470nm付近に光吸収が生じて、透明電極と
しての光透過率(反射型電極では反射率)の低下が生じ
る。
More specifically, when a large amount of oxygen is present in a gas introduced into the silver-based conductive thin film layer or in the background, light absorption occurs at a wavelength of about 470 nm, and the light transmittance (reflection type) as a transparent electrode is generated. The electrode has a lower reflectance).

【0028】図5は、銀系導電薄膜層が0.1〜2.5
at%の金及び0at%〜3.0at%の銅を添加した
銀合金により形成された透明な銀系導電薄膜層と、非晶
質物質による酸化物系透明導電薄膜層により形成された
3層構造の透明な表示装置用電極基板(3層構造の導電
膜の総膜厚;約85nmの場合)の分光透過率を示すグ
ラフであり、グラフは銅0at%添加の場合、グラフ
は銅0.3at%添加の場合、グラフは銅1.0a
t%添加の場合、グラフは銅3.0at%添加の場合
であって、上記銀系導電薄膜層への銅の添加量は、上記
図5に示すように、0.3%程度から徐々に短波長側で
の凹みが減少し、短波長側の透過率の落ち込みを上昇さ
せる効果がある。
FIG. 5 shows that the silver-based conductive thin film layer has a thickness of 0.1 to 2.5.
a transparent silver-based conductive thin film layer formed of a silver alloy to which at% of gold and 0 at% to 3.0 at% of copper are added, and a three-layer formed of an oxide-based transparent conductive thin film layer made of an amorphous substance 5 is a graph showing the spectral transmittance of a transparent electrode substrate for a display device having a structure (total thickness of a conductive film having a three-layer structure; about 85 nm). In the case of adding 3 at%, the graph shows copper 1.0a.
In the case of adding t%, the graph shows the case of adding 3.0 at% of copper. As shown in FIG. 5, the amount of copper added to the silver-based conductive thin film layer gradually increases from about 0.3%. This has the effect of reducing dents on the short wavelength side and increasing the drop in transmittance on the short wavelength side.

【0029】銅は、銀に対して共晶の(完全固溶でな
い)形をとるため、銅の添加量が多くなると、光透過率
若しくは反射率に悪い影響を与えるようになり、また、
添加量が多くなると、導電膜の抵抗値が上昇する傾向が
ある。
Since copper takes a eutectic (not completely solid solution) form with silver, an increase in the amount of added copper adversely affects light transmittance or reflectance.
When the amount of addition increases, the resistance value of the conductive film tends to increase.

【0030】例えば、上記銀系導電薄膜層の膜厚を10
〜11nmとし、且つ銅の添加量を3at%以上とした
場合には、面積抵抗値は5Ωを超えるようになる。
For example, if the thickness of the silver-based conductive thin film layer is 10
When the thickness is set to about 11 nm and the addition amount of copper is set to 3 at% or more, the sheet resistance value exceeds 5Ω.

【0031】上記酸化物系透明導電薄膜層を非晶質化す
るには、ある種の金属酸化物に異種金属を相当量(酸化
物の相溶性によって変わるが一般的に20%以上)混合
せしめた酸化物ターゲットを用いて、スパッタリングな
どの成膜法により基板温度を低く設定して(例えば20
℃以下、若しくは室温など)非晶質化することが簡便で
ある。
In order to make the above-mentioned oxide-based transparent conductive thin film layer amorphous, a certain kind of metal oxide is mixed with a considerable amount of a different metal (depending on the compatibility of the oxide, but generally 20% or more). The substrate temperature is set low (for example, 20
It is convenient to make the film amorphous (eg, at or below room temperature or at room temperature).

【0032】また、上記金属酸化物としては、耐酸性や
耐アルカリ性、耐熱性に富む材料から選定すればよい。
The metal oxide may be selected from materials having excellent acid resistance, alkali resistance and heat resistance.

【0033】次に、反射電極の用途を前提として、ガラ
ス基板上に、酸化物系の導電薄膜による導電性の接着層
(例えば膜厚10nm、屈折率2.3、但し光波長によ
る屈折率や吸収係数の変化など波長分散を無視した)
と、銀系導電薄膜層50nm〜200nmと、酸化物系
透明導電薄膜層(例えば膜厚40nm)とを順次積層し
た反射型の表示電極基板のシミュレーションを行った。
Next, assuming that the reflective electrode is used, a conductive adhesive layer (for example, a film having a thickness of 10 nm, a refractive index of 2.3, but a refractive index depending on the light wavelength) is formed on a glass substrate. Ignored chromatic dispersion such as changes in absorption coefficient)
A simulation was performed on a reflective display electrode substrate in which a silver-based conductive thin film layer having a thickness of 50 nm to 200 nm and an oxide-based transparent conductive thin film layer (eg, a film thickness of 40 nm) were sequentially stacked.

【0034】そして、上記反射型の表示電極基板の導電
薄膜層の反射率のシミュレーション結果を図11に示
す。グラフは銀系導電薄膜の膜厚50nm、グラフ
は銀系導電薄膜の膜厚75nm、グラフは銀系導電薄
膜の膜厚100nm、グラフは銀系導電薄膜の膜厚2
00nmの場合を示す。なお、使用する測定媒質(測定
光の経路内に介在する媒質)の屈折率を1.5とした。
FIG. 11 shows a simulation result of the reflectance of the conductive thin film layer of the reflective display electrode substrate. The graph shows the thickness of the silver-based conductive thin film of 50 nm, the graph shows the thickness of the silver-based conductive thin film of 75 nm, the graph shows the thickness of the silver-based conductive thin film of 100 nm, and the graph shows the thickness of the silver-based conductive thin film of 2.
The case of 00 nm is shown. The refractive index of the measurement medium (medium interposed in the path of the measurement light) used was 1.5.

【0035】次に、本発明の請求項2に係る発明を、実
施の形態にしたがって以下に詳細に説明する。
Next, the invention according to claim 2 of the present invention will be described in detail below according to embodiments.

【0036】請求項2に係る発明は、上記請求項1の発
明の表示装置用電極基板において、前記銀系導電薄膜層
の層厚が50〜200nmの範囲内にあり、且つ酸化物
系透明導電薄膜層の層厚が40〜100nmの範囲内に
ある表示装置用電極基板である。
According to a second aspect of the present invention, in the electrode substrate for a display device according to the first aspect of the present invention, the thickness of the silver-based conductive thin film layer is in the range of 50 to 200 nm, and the oxide-based transparent conductive layer is formed. This is a display device electrode substrate in which the thickness of the thin film layer is in the range of 40 to 100 nm.

【0037】即ち、請求項2に係る発明は、反射型表示
電極基板の用途を前提として、反射層としての銀系導電
薄膜層の膜厚が50nm〜200nmの範囲にあり、且
つ酸化物系透明導電薄膜層の膜厚が40nm〜100n
mの範囲にあるものである。
That is, the invention according to claim 2 is based on the premise that the reflective display electrode substrate is used, wherein the thickness of the silver-based conductive thin film layer as the reflective layer is in the range of 50 nm to 200 nm, and the oxide-based transparent electrode layer is transparent. The thickness of the conductive thin film layer is 40 nm to 100 n
m.

【0038】図11は、銀系導電薄膜層の膜厚の反射率
に対する影響を示すものであるが、銀系導電薄膜層の膜
厚が50nmを超えると、反射率80%前後の反射型電
極となり、200nmでは反射率が飽和して、光透過率
はほぼ0%となることが示されている。
FIG. 11 shows the effect of the thickness of the silver-based conductive thin film layer on the reflectance. When the thickness of the silver-based conductive thin film layer exceeds 50 nm, the reflective electrode having a reflectance of about 80% is used. It is shown that at 200 nm, the reflectance is saturated and the light transmittance becomes almost 0%.

【0039】図8及び図9に、反射型電極における各々
銀系導電薄膜層の膜厚と反射率との関係について、その
波長分散を考慮したシミュレーション結果を示し、表1
に、各々銀系導電薄膜層(AgAuCu)と酸化物系導
電薄膜層(ICTTO)について、その光学定数(屈折
率、光の消衰係数)を示した。
FIG. 8 and FIG. 9 show the simulation results in consideration of the wavelength dispersion of the relationship between the thickness of each silver-based conductive thin film layer and the reflectance in the reflective electrode.
Table 1 shows the optical constants (refractive index, light extinction coefficient) of the silver-based conductive thin film layer (AgAuCu) and the oxide-based conductive thin film layer (ICTTO).

【0040】[0040]

【表1】 [Table 1]

【0041】上記酸化物系透明導電薄膜層の膜厚が30
nm以下及び110nm以上で、435nm(青色の主
波長)の反射率が約70%と低くなることが示されてい
る。
The oxide-based transparent conductive thin film layer has a thickness of 30
It is shown that the reflectance at 435 nm (the main wavelength of blue) is as low as about 70% below nm and above 110 nm.

【0042】また、酸化物系透明導電薄膜層の膜厚が、
40nm〜100nmの範囲では良好な反射率をもつこ
とが示されている。
The thickness of the oxide-based transparent conductive thin film layer is
In the range of 40 nm to 100 nm, it has been shown to have a good reflectance.

【0043】次に、本発明の請求項3に係る発明を、実
施の形態にしたがって以下に詳細に説明する。
Next, the invention according to claim 3 of the present invention will be described in detail below according to embodiments.

【0044】請求項3に係る発明は、上記請求項1に係
る発明の表示装置用電極基板において、前記銀系導電薄
膜層の層厚が5〜25nmの範囲内にあって、前記導電
性接着層が前記酸化物系透明導電薄膜層と同種の酸化物
を含有する表示装置用電極基板である。
According to a third aspect of the present invention, in the electrode substrate for a display device according to the first aspect of the present invention, the silver-based conductive thin film layer has a thickness in a range of 5 to 25 nm, and An electrode substrate for a display device, wherein the layer contains the same kind of oxide as the oxide-based transparent conductive thin film layer.

【0045】図10に、透過型電極の用途を前提とし
て、ガラス基板上に、酸化物系の透明導電薄膜による導
電性の接着層(例えば膜厚35nm、屈折率2.2)
と、銀系導電薄膜層15nm〜25nmと、酸化物系透
明導電薄膜層(例えば膜厚40nm)とを順次積層した
透過型の表示電極基板による分光透過率のシミュレーシ
ョンを示した。グラフは銀系導電薄膜層の膜厚15n
m、グラフは銀系導電薄膜層の膜厚17.5nm、グ
ラフは銀系導電薄膜層の膜厚20.0nm、グラフ
は銀系導電薄膜層の膜厚22.5nm、は銀系導電薄
膜層の膜厚25.0nmの場合であり、測定媒質はエア
ー(空気)として屈折率1とした。
FIG. 10 shows that a conductive adhesive layer (for example, a film thickness of 35 nm and a refractive index of 2.2) made of an oxide-based transparent conductive thin film is formed on a glass substrate on the assumption that the transmission electrode is used.
A simulation of a spectral transmittance of a transmission type display electrode substrate in which a silver-based conductive thin film layer of 15 nm to 25 nm and an oxide-based transparent conductive thin film layer (for example, a film thickness of 40 nm) are sequentially stacked is shown. The graph shows the thickness of the silver-based conductive thin film layer of 15n.
m, the graph is the thickness of the silver-based conductive thin film layer 17.5 nm, the graph is the thickness of the silver-based conductive thin film layer 20.0 nm, the graph is the thickness of the silver-based conductive thin film layer 22.5 nm, and the graph is the silver-based conductive thin film layer And a refractive index of 1 was used as the measurement medium as air.

【0046】銀系導電薄膜層の膜厚が25nmの比較的
厚い領域でも、ピークの透過率は、比較的良好な80%
が得られる。また、銀系導電薄膜層の膜厚は20nm強
で、3層構造の導電膜の面積抵抗値は、約2Ωとなる。
Even in the region where the thickness of the silver-based conductive thin film layer is relatively thick, 25 nm, the peak transmittance is 80%, which is relatively good.
Is obtained. The thickness of the silver-based conductive thin film layer is slightly over 20 nm, and the three-layer conductive film has a sheet resistance of about 2Ω.

【0047】また、銀系導電薄膜層は、膜厚5nm未満
ではアイランド状(ランド状)になり、均質な膜とはな
らず、計算上での適正な光学特性や抵抗値を算出するこ
とが困難となり、また、膜厚5nm以下の極薄膜の領域
では、良好な3層の導電膜とはならない。
If the thickness of the silver-based conductive thin film layer is less than 5 nm, it becomes island-like (land-like) and does not become a uniform film, so that it is possible to calculate appropriate optical characteristics and resistance values in calculation. It becomes difficult, and in a region of an extremely thin film having a thickness of 5 nm or less, a good three-layer conductive film is not obtained.

【0048】加えて、透過型の表示電極基板を前提とし
た3層構造の導電膜は、銀系導電薄膜層の表裏両面側に
積層されているそれぞれ酸化物系透明導電薄膜層の成膜
状態(例えば、成膜時の条件、酸素分圧など)が互いに
より近似している方が、透過率と抵抗値に良い影響を与
える。
In addition, the conductive film having a three-layer structure on the premise of a transmission type display electrode substrate is formed by depositing an oxide-based transparent conductive thin film layer on both the front and back sides of the silver-based conductive thin film layer. (For example, conditions at the time of film formation, oxygen partial pressure, and the like) are more similar to each other, which has a better influence on the transmittance and the resistance value.

【0049】また、銀系導電薄膜層の表裏両面側のそれ
ぞれ前記酸化物系透明導電薄膜層の成膜材料が同じであ
れば、スパッタリング成膜用のターゲットなど材料管理
も容易である。
Further, if the film-forming material of the oxide-based transparent conductive thin film layer on each of the front and back surfaces of the silver-based conductive thin film layer is the same, material management such as a sputtering film-forming target is easy.

【0050】ところで近年、STNやECBなど単純マ
トリクス方式の液晶ディスプレイ表示装置の技術進歩は
著しく、CRT代替のモニターとしてカラーSTN方式
を使おうという動きがあり、据え置きのモニターの場
合、100V、110Vといった外部電源との接続が可
能であり、こうしたことから高輝度のバックライトの常
用が可能となる。
In recent years, the technical progress of simple matrix type liquid crystal display devices such as STN and ECB has been remarkable, and there has been a movement to use a color STN type as a monitor instead of a CRT. Connection to an external power supply is possible, and this makes it possible to use a high-brightness backlight.

【0051】この観点からモニター用途の単純マトリク
ス方式の液晶ディスプレイ表示装置では、これに用いる
透明電極は低抵抗値であることを優先して、透過率をあ
る程度犠牲にして良いことになるが、このような単純マ
トリクス方式では、画質向上にとっては透明電極の抵抗
値の影響がきわめて大きいし、前述した透明電極の面積
抵抗値が2Ω付近になると、シャドウイングと称される
画質の低下がほとんど無くなるため、ディスプレイとし
て実用レベルでTFT方式と競合できる。
From this point of view, in a simple matrix type liquid crystal display device for monitor use, the transmittance of the transparent electrode used for this purpose may be sacrificed to some extent, giving priority to a low resistance value. In such a simple matrix system, the effect of the resistance value of the transparent electrode is extremely large in improving the image quality, and when the area resistance value of the transparent electrode is close to 2Ω, the image quality called shadowing is hardly reduced. As a display, it can compete with the TFT method at a practical level.

【0052】次に、本発明の請求項4に係る発明を、実
施の形態にしたがって以下に詳細に説明する。
Next, the invention according to claim 4 of the present invention will be described in detail below according to embodiments.

【0053】請求項4に係る発明は、上記請求項3に係
る発明の表示装置用電極基板において、前記導電性接着
層及び酸化物系透明導電薄膜層の全体若しくは一部が、
屈折率2.1より大きい酸化物を含有する表示装置用電
極基板である。
According to a fourth aspect of the present invention, in the electrode substrate for a display device according to the third aspect of the present invention, the whole or a part of the conductive adhesive layer and the oxide-based transparent conductive thin film layer is
It is a display device electrode substrate containing an oxide having a refractive index greater than 2.1.

【0054】本発明者らは、さらに検討を重ねたとこ
ろ、上記のように、酸化物系透明導電薄膜層に屈折率が
2.1より大きい酸化物を用いた3層構造の導電膜の構
成が、さらに良好な結果を得ることを見い出した。
The present inventors have further studied and found that, as described above, the structure of a three-layered conductive film using an oxide having a refractive index greater than 2.1 for the oxide-based transparent conductive thin film layer However, it has been found that even better results can be obtained.

【0055】そして、屈折率の高い酸化物(可視光領域
で透明であれば酸化物に限定するものではないが製造コ
スト等の点で酸化物が実用的である)を、接着層あるい
は酸化物系透明導電薄膜層の全体、若しくはこれらの一
部に挿入することにより、光透過率の向上に効果がある
ことを見い出した。
Then, an oxide having a high refractive index (the oxide is not limited as long as it is transparent in the visible light region, but an oxide is practical in terms of production cost, etc.) is replaced with an adhesive layer or an oxide. It has been found that the insertion into the whole or a part of the system transparent conductive thin film layer is effective in improving the light transmittance.

【0056】高屈折率材料を用いての光透過率のアップ
は、エアー(空気)よりも屈折率の高い液晶材料(通常
の液晶の屈折率は1.5〜1.6程度)や、カラーフィ
ルタ(カラーフィルタの材料の屈折率は1.5を若干超
える程度)と接する形態の液晶表示装置を対象とした3
層構造の導電膜の場合に顕著である。
The light transmittance can be increased by using a high refractive index material by using a liquid crystal material having a refractive index higher than that of air (normal liquid crystal has a refractive index of about 1.5 to 1.6) or a color. 3 intended for a liquid crystal display device in contact with a filter (the refractive index of the material of the color filter is slightly more than 1.5)
This is remarkable in the case of a conductive film having a layer structure.

【0057】例えばガラス等の基板上に形成された3層
構造の透過型の表示電極の片側がエアー(空気)である
場合のシミュレーション結果を図6のB線で示すが、透
過率Tはピークで96%程度、反射率Rは1%に近いと
ころまで下がり、透過型の表示電極基板(透明電極)と
しての良好な結果が得られる。
A simulation result when one side of a three-layered transmission type display electrode formed on a substrate such as glass is air is shown by the line B in FIG. , The reflectance R drops to a position close to 1%, and a good result as a transmissive display electrode substrate (transparent electrode) can be obtained.

【0058】ここでは基板側の透明酸化物薄膜による接
着層の膜厚を40nm、透明な銀系導電薄膜層(Ag薄
膜)の膜厚を14nm、空気と接する側の酸化物系透明
導電薄膜層(透明酸化物薄膜)の膜厚を44nmとし
た。そして、それら透明酸化物薄膜の屈折率をITOと
ほぼ同じ2.0として算出した。
Here, the thickness of the adhesive layer of the transparent oxide thin film on the substrate side is 40 nm, the thickness of the transparent silver-based conductive thin film layer (Ag thin film) is 14 nm, and the oxide-based transparent conductive thin film layer on the side in contact with air. The thickness of the (transparent oxide thin film) was 44 nm. And the refractive index of these transparent oxide thin films was calculated as 2.0 which is almost the same as that of ITO.

【0059】しかし、3層構造の上記透明電極上にポリ
イミドの配向膜を40nm積層し、これに接する液晶の
屈折率を1.5として算出すると、図6のA線で示すよ
うに透過率Tはピークが90%以下に低下し、反射率R
は光波長550nm付近でおよそ10%まで上昇して、
透過型の表示電極基板(透明電極)としての性能が低下
してしまう。
However, when a polyimide alignment film is laminated on the transparent electrode having a three-layer structure to a thickness of 40 nm and the refractive index of the liquid crystal in contact therewith is calculated as 1.5, the transmittance T as shown by line A in FIG. Indicates that the peak falls to 90% or less and the reflectance R
Rises to about 10% around the light wavelength of 550 nm,
The performance as a transmission type display electrode substrate (transparent electrode) will be reduced.

【0060】本発明者らは、このことから3層構造の透
過型の表示電極基板に液晶の配向膜としてのポリイミド
膜と液晶が接する形での計算を、銀系導電薄膜層をその
表裏で挟むそれぞれ透明な酸化物薄膜の各々屈折率を変
えて(屈折率を変えると同時に膜厚も調整して)最適化
して行った。
Based on this, the present inventors have calculated on the assumption that a liquid crystal is in contact with a polyimide film as an alignment film of a liquid crystal on a transmission type display electrode substrate having a three-layer structure. The optimization was performed by changing the refractive index of each of the transparent oxide thin films sandwiched between them (by changing the refractive index and simultaneously adjusting the film thickness).

【0061】その結果を図6に示す。この図から、透明
酸化物薄膜の屈折率が特に2.1を超える程度に高い方
が透過率が向上し、また反射率も低下することがわか
る。
FIG. 6 shows the result. From this figure, it can be seen that the higher the refractive index of the transparent oxide thin film particularly exceeds 2.1, the higher the transmittance and the lower the reflectance.

【0062】次に、本発明の請求項5に係る発明を、実
施の形態にしたがって以下に詳細に説明する。
Next, the invention according to claim 5 of the present invention will be described in detail below according to embodiments.

【0063】請求項5に係る発明は、上記請求項3又は
請求項4に係る発明の表示装置用電極基板において、前
記導電性接着層及び酸化物系透明導電薄膜層が、酸化セ
リウムと酸化チタンのうちいずれか一方若しくは両方よ
り選ばれた酸化物を含有する表示装置用電極基板であ
る。
According to a fifth aspect of the present invention, in the electrode substrate for a display device according to the third or fourth aspect, the conductive adhesive layer and the oxide-based transparent conductive thin film layer are made of cerium oxide and titanium oxide. A display device electrode substrate containing an oxide selected from one or both of the above.

【0064】透過型の表示電極基板(透明電極)を前提
とした場合、本発明に用いる透明酸化物薄膜に用いて材
料としては、高屈折率材料を用いることにより透過率を
向上せしめるものである。
Assuming that a transmission type display electrode substrate (transparent electrode) is used, the transmittance is improved by using a high refractive index material as the material used for the transparent oxide thin film used in the present invention. .

【0065】この高屈折率材料の代表的な酸化物は、酸
化セリウムと酸化チタンであり、これらを、およそ20
〜80%の割合で異種酸化物と混合して、透明な導電性
の接着層及び酸化物系透明導電薄膜層を形成することに
より、透明電極としての3層構造の導電膜の光透過率を
向上させるものである。
Typical oxides of this high refractive index material are cerium oxide and titanium oxide,
The light transmittance of a three-layer conductive film as a transparent electrode is reduced by forming a transparent conductive adhesive layer and an oxide-based transparent conductive thin film layer by mixing with a heterogeneous oxide at a ratio of about 80%. It is to improve.

【0066】次に、本発明の請求項6に係る発明を、実
施の形態にしたがって以下に詳細に説明する。
Next, the invention according to claim 6 of the present invention will be described in detail below according to embodiments.

【0067】請求項6に係る発明は、上記請求項3又は
請求項4又は請求項5に係る発明の表示装置用電極基板
において、前記導電性接着層及び酸化物系透明導電薄膜
層が酸化インジウムを含有する表示装置用電極基板であ
る。
According to a sixth aspect of the present invention, in the electrode substrate for a display device according to the third or fourth or fifth aspect, the conductive adhesive layer and the oxide-based transparent conductive thin film layer are formed of indium oxide. Is an electrode substrate for a display device.

【0068】本発明の表示装置用電極基板においては、
表示素子の駆動のために、電気的導通を透明酸化物薄膜
の表面からとる必要がある。
In the electrode substrate for a display device of the present invention,
In order to drive the display element, it is necessary to establish electrical conduction from the surface of the transparent oxide thin film.

【0069】また透明酸化物薄膜を、熱的にも比較的安
定した形(例えば250℃付近のアニールでも結晶化が
進まないような形)で非晶質化させるためには、前記し
たようにおよそ20〜80%の範囲で異種酸化物添加の
混合酸化物薄膜にする必要がある。
In order to make the transparent oxide thin film amorphous in a form that is relatively thermally stable (for example, crystallization does not proceed even by annealing at about 250 ° C.), as described above, It is necessary to form a mixed oxide thin film to which different oxides are added in the range of about 20 to 80%.

【0070】こうした非晶質の混合酸化物の状態で電気
的な導通がとれる酸化物は少なく、本発明者らの検討し
た範囲では、透明酸化物薄膜の材料を酸化インジウムと
することが有利であることを見い出した。
Few oxides can be electrically connected in such an amorphous mixed oxide state, and it is advantageous to use indium oxide as the material of the transparent oxide thin film within the range studied by the present inventors. I found something.

【0071】さらに具体的には、酸化インジウムと、酸
化セリウム(あるいは酸化チタン)を、およそ20〜8
0%の範囲で混合せしめた酸化物ターゲットを用いてス
パッタリングなどの成膜方法で成膜すればよい。なお、
混合割合は、上記した範囲に入らなくても透明酸化物薄
膜として非晶質であればよい。
More specifically, indium oxide and cerium oxide (or titanium oxide) were added at about 20 to 8
A film may be formed by a film formation method such as sputtering using an oxide target mixed in a range of 0%. In addition,
The mixing ratio does not need to be in the above range as long as the transparent oxide thin film is amorphous.

【0072】本発明の表示装置用電極基板は、透過型又
は反射型の表示装置用電極基板のいずれをも包含するも
のであるが、例えば、反射型の表示装置用電極基板であ
る場合は、用いる基板は、ガラス、プラスチックなどの
透明な基板、又は白、黒、その他の色に着色された透明
又は不透明な基板であってもよい。そして、基板の材料
も、ガラス、プラスチックフィルム、プラスチックシー
ト、セラミック、金属板、あるいはアモルファスシリコ
ン、ポリシリコン、MIMなどの半導体素子が形成され
た基板など種々のものが使用できる。また、用いる前記
基板には、予めカラーフィルタ層(例えばレッド、グリ
ーン、ブルーの各着色層)をパターン形成してあっても
よい。
The display device electrode substrate of the present invention includes both a transmission type and a reflection type display device electrode substrate. For example, in the case of a reflection type display device electrode substrate, The substrate used may be a transparent substrate such as glass or plastic, or a transparent or opaque substrate colored white, black or other colors. Various materials can be used for the substrate, such as glass, plastic films, plastic sheets, ceramics, metal plates, or substrates on which semiconductor elements such as amorphous silicon, polysilicon, and MIM are formed. In addition, a color filter layer (for example, red, green, and blue colored layers) may be formed in a pattern on the substrate to be used in advance.

【0073】また、本発明の3層構造の導電膜は低抵抗
値であるため、TFTやMIMなどの素子の信号線やバ
スラインなどに使用でき、これらの画素電極と兼用する
ことも可能である。
Since the three-layered conductive film of the present invention has a low resistance value, it can be used for signal lines and bus lines of elements such as TFTs and MIMs, and can also be used as these pixel electrodes. is there.

【0074】[0074]

【実施例】以下に本発明の具体的実施例を示す。EXAMPLES Specific examples of the present invention will be described below.

【0075】<実施例1>図1に示すように、この実施
例に係る透過型の表示装置用電極基板15は、厚さ0.
7mmのガラス基板10上に順次積層された厚さ35n
mの導電性の接着層である透明酸化物薄膜11(酸化物
系透明導電薄膜層)と、厚さ14nmの透明な銀系導電
薄膜12(銀系導電薄膜層)、及び厚さ38nmの透明
酸化物薄膜13(酸化物系透明導電薄膜層)とで、その
主要部が構成されている。なお、上記透明酸化物薄膜1
1、13は、そのいずれもが酸化セリウム(酸素を除く
金属元素換算で32at%)を、酸化インジウムの薄膜
に加えた混合酸化物とした。また、上記透明酸化物薄膜
11、13間の銀系薄膜12は、銀に、金1.0at%
と銅1.5at%とを添加した銀合金である。
<Embodiment 1> As shown in FIG. 1, a transmission type display device electrode substrate 15 according to this embodiment has a thickness of 0.1 mm.
35 n in thickness sequentially laminated on a 7 mm glass substrate 10
m, a transparent oxide thin film 11 (oxide-based transparent conductive thin-film layer), a transparent silver-based conductive thin film 12 (silver-based conductive thin-film layer) having a thickness of 14 nm, and a transparent thin film having a thickness of 38 nm. The oxide thin film 13 (oxide-based transparent conductive thin film layer) forms a main part thereof. The transparent oxide thin film 1
Each of 1 and 13 was a mixed oxide in which cerium oxide (32 at% in terms of a metal element excluding oxygen) was added to a thin film of indium oxide. The silver-based thin film 12 between the transparent oxide thin films 11 and 13 is formed by adding 1.0 at% of gold to silver.
And 1.5 at% of copper.

【0076】そして、上記3層構造の透明導電膜14
は、以下のような方法で成膜した。まず、ガラス基板1
0の表面を有機アルカリ系の界面活性剤と水とで洗浄し
た後、真空槽内に収容し、逆スパッタリングと称される
プラズマ処理を施し、さらに表面を洗浄処理した。
Then, the transparent conductive film 14 having the three-layer structure is formed.
Was formed by the following method. First, the glass substrate 1
After the surface of No. 0 was washed with an organic alkali-based surfactant and water, it was housed in a vacuum chamber, subjected to a plasma treatment called reverse sputtering, and further washed.

【0077】次に、ガラス基板10を真空槽中から取り
出すことなく、このガラス基板10を室温に維持した状
態で、スパッタリング法により透明酸化物薄膜11、銀
薄膜12及び透明酸化物薄膜13を順次積層成膜した。
Next, the transparent oxide thin film 11, the silver thin film 12, and the transparent oxide thin film 13 are successively formed by the sputtering method without removing the glass substrate 10 from the vacuum chamber and keeping the glass substrate 10 at room temperature. Laminated films were formed.

【0078】次に、透明酸化物薄膜13上に電極形状の
レジスト膜をフォトリソグラフィ法にてパターン形成
し、このレジスト膜から露出した部位を硝酸系エッチン
グ液によりエッチングして、上記3層構造の薄膜を互い
に位置整合させた状態で電極形状にパターニングし、続
いて、220℃、1時間のアニール処理を施して、電極
形状の上記透明電極14を形成して、透過型の表示装置
用電極基板15を作製した。こうして得られた透明電極
14の面積抵抗値は、約3.3Ωであった。
Next, a resist film in the form of an electrode is patterned on the transparent oxide thin film 13 by photolithography, and the portion exposed from the resist film is etched with a nitric acid-based etchant to form the above three-layer structure. The thin film is patterned into an electrode shape in a state where the thin films are aligned with each other, and then subjected to an annealing process at 220 ° C. for 1 hour to form the transparent electrode 14 having the electrode shape. No. 15 was produced. The sheet resistance of the transparent electrode 14 thus obtained was about 3.3Ω.

【0079】図4に、上記膜厚14nmの銀系導電薄膜
層を施した実施例1の透明電極14の可視光線透過率
(グラフ)を実線にて示す。なお、グラフは膜厚1
2nm以下の銀系導電薄膜層を施した透明電極14(面
積抵抗値;約4.6Ω)の透過率、グラフは膜厚19
nmの銀系導電薄膜層を施した透明電極14(膜厚;約
90nm、面積抵抗値;約2.2Ω)の透過率を示す。
FIG. 4 shows the visible light transmittance (graph) of the transparent electrode 14 of Example 1 provided with the silver-based conductive thin film layer having a thickness of 14 nm by a solid line. The graph shows a film thickness of 1
The transmittance of the transparent electrode 14 (area resistance: about 4.6Ω) provided with a silver-based conductive thin film layer of 2 nm or less,
The transmittance of the transparent electrode 14 (thickness: about 90 nm, sheet resistance: about 2.2Ω) provided with a silver-based conductive thin film layer of 10 nm is shown.

【0080】このパターン形成した透明電極14を60
℃、湿度95%の雰囲気内に、500時間保持した後、
その表面を観察した。その結果、その表面は何ら外観変
化を生じなかった。なお、この混合酸化物による透明電
極14の屈折率を測定したところ、2.24であった。
This patterned transparent electrode 14 is
After keeping for 500 hours in an atmosphere of 95 ° C. and 95% humidity,
The surface was observed. As a result, the surface did not change appearance at all. The refractive index of the transparent electrode 14 due to this mixed oxide was measured and found to be 2.24.

【0081】この透明電極14を、薄膜X線回折でその
結晶性を調べたところ、銀薄膜12による微小の銀のピ
ークは観察されたものの、透明酸化物薄膜11、13に
よる結晶のピークは観察されなかった。
When the crystallinity of the transparent electrode 14 was examined by thin film X-ray diffraction, a fine silver peak due to the silver thin film 12 was observed, but a crystal peak due to the transparent oxide thin films 11 and 13 was observed. Was not done.

【0082】そして、上記透明電極14は、熱的にも安
定で、300℃まで熱処理しても、透明酸化物薄膜に結
晶のピークは観察されず、その面積抵抗値の上昇もほと
んど見られなかった。
The transparent electrode 14 is also thermally stable, and no crystal peak is observed in the transparent oxide thin film even when the heat treatment is performed up to 300 ° C., and almost no increase in the sheet resistance is observed. Was.

【0083】<実施例2>図2に示すように、この実施
例に係る反射型の表示装置用電極基板25は、厚さ0.
5mmのガラス基板20上に、順次積層された導電性の
接着層である厚さ10nmの酸化物薄膜21(透明乃至
不透明酸化物薄膜)と、厚さ150nmの銀系薄膜22
(銀系導電薄膜層)と、厚さ75nmの透明酸化物薄膜
23(酸化物系透明導電薄膜層)とで、その主要部が構
成されている。
<Embodiment 2> As shown in FIG. 2, the reflective display device electrode substrate 25 according to this embodiment has a thickness of 0.1 mm.
An oxide thin film 21 (transparent to opaque oxide thin film) having a thickness of 10 nm, which is a conductive adhesive layer, and a silver-based thin film 22 having a thickness of 150 nm, which are sequentially laminated on a 5 mm glass substrate 20.
(Silver-based conductive thin film layer) and the transparent oxide thin film 23 (oxide-based transparent conductive thin film layer) having a thickness of 75 nm constitute main parts thereof.

【0084】上記透明酸化物薄膜21、23は、酸化イ
ンジウム、酸化セリウム、酸化錫、酸化チタンを、各々
酸素原子を数に含めない金属原子のみのアトミックパー
セントにて、インジウム66at%、セリウム32.5
at%、錫1.0at%、チタン0.5at%の組成と
した。これら3層構造の反射導電膜24の面積抵抗値は
約0.2Ωであった。
The transparent oxide thin films 21 and 23 are made of indium oxide, cerium oxide, tin oxide and titanium oxide in an atomic percentage of only metal atoms not including oxygen atoms of 66 in% indium and 32 at cerium. 5
at%, tin 1.0 at%, and titanium 0.5 at%. The sheet resistance of these three-layered reflective conductive films 24 was about 0.2Ω.

【0085】この反射型の表示装置用電極基板25の分
光特性を図3に示すが、400nmで80%、450n
m〜700nmでは、ほぼ90%以上の高い反射率が得
られた。
FIG. 3 shows the spectral characteristics of this reflective display device electrode substrate 25.
At m to 700 nm, a high reflectance of about 90% or more was obtained.

【0086】そして、上記3層構造の反射導電膜24
は、以下のような方法で成膜した。まず、ガラス基板2
0の表面を有機アルカリ系の界面活性剤と水とで洗浄し
た後、真空槽内に収容し、逆スパッタリングと称される
プラズマ処理を施し、さらに表面を洗浄処理した。
Then, the reflective conductive film 24 having the above three-layer structure is formed.
Was formed by the following method. First, the glass substrate 2
After the surface of No. 0 was washed with an organic alkali-based surfactant and water, it was housed in a vacuum chamber, subjected to a plasma treatment called reverse sputtering, and further washed.

【0087】次に、ガラス基板20を真空槽中から取り
出すことなく、このガラス基板20を室温に維持した状
態で、スパッタリング法により透明酸化物薄膜21、銀
薄膜22及び透明酸化物薄膜23を順次積層成膜した。
Next, the transparent oxide thin film 21, the silver thin film 22, and the transparent oxide thin film 23 are sequentially formed by a sputtering method without removing the glass substrate 20 from the vacuum chamber and keeping the glass substrate 20 at room temperature. Laminated films were formed.

【0088】次に、透明酸化物薄膜23上に電極形状の
レジスト膜をフォトリソグラフィ法にてパターン形成
し、このレジスト膜から露出した部位を硝酸系エッチン
グ液によりエッチングして、上記3層構造の薄膜を互い
に位置整合させた状態で電極形状にパターニングし、続
いて、220℃、1時間のアニール処理を施して、電極
形状の上記反射導電膜24を形成して、反射型の表示装
置用電極基板25を作製した。こうして得られた反射導
電膜24の面積抵抗値は、約0.2Ωであった。
Next, a resist film in the form of an electrode is patterned on the transparent oxide thin film 23 by photolithography, and the portion exposed from the resist film is etched with a nitric acid-based etchant to form the above-mentioned three-layer structure. The thin film is patterned into an electrode shape in a state where the thin films are aligned with each other, followed by annealing at 220 ° C. for 1 hour to form the reflective conductive film 24 in the electrode shape. The substrate 25 was manufactured. The sheet resistance of the reflective conductive film 24 thus obtained was about 0.2Ω.

【0089】反射導電膜24を薄膜X線回折で結晶性を
調べたところ、銀薄膜22による銀の結晶ピークは観察
されたものの、透明酸化物薄膜21、23による結晶の
ピークは観察されなかった。
When the crystallinity of the reflective conductive film 24 was examined by thin film X-ray diffraction, a silver crystal peak due to the silver thin film 22 was observed, but a crystal peak due to the transparent oxide thin films 21 and 23 was not observed. .

【0090】反射導電膜24は、熱的にも安定で、30
0℃まで熱処理しても透明酸化物薄膜21、23による
結晶のピークは観察されなかった。また、60℃、湿度
95%の雰囲気内に500時間保持して、その表面を観
察した結果、外観変化もなく耐湿性の高いものであっ
た。
The reflective conductive film 24 is thermally stable,
No crystal peak due to the transparent oxide thin films 21 and 23 was observed even when the heat treatment was performed to 0 ° C. The surface was observed for 500 hours in an atmosphere at a temperature of 60 ° C. and a humidity of 95%, and the surface was observed.

【0091】[0091]

【発明の効果】本発明の表示装置用電極基板は、銀に少
量の金と銅を添加した銀合金を銀系薄膜に用いることに
より、また同時に透明酸化物薄膜を非晶質とすることに
より、表示装置用電極基板に耐湿性を付与でき、信頼性
を高くする効果があり、また、屈折率2.1以上の高屈
折率の透明酸化物薄膜を用いることにより、透過率の高
い透過型の表示装置用電極基板が得られ、可視光の波長
全域に亘って反射率の高い反射型の表示装置用電極基板
が得られる効果があり、薄膜で低抵抗値であって良好な
導電性を示すとともに、可視光線透過率又は反射率が高
く、しかも経時劣化がなく保存安定性に優れた透過型又
は反射型の表示装置用電極基板として実用的効果があ
る。
According to the present invention, the electrode substrate for a display device can be obtained by using a silver alloy obtained by adding a small amount of gold and copper to silver for a silver-based thin film and, at the same time, making the transparent oxide thin film amorphous. It is possible to impart moisture resistance to an electrode substrate for a display device, and has an effect of increasing reliability. In addition, by using a transparent oxide thin film having a high refractive index of 2.1 or more, a transmission type having a high transmittance can be obtained. This has the effect of obtaining a reflective electrode substrate for display devices having a high reflectivity over the entire wavelength range of visible light, and has a thin film, low resistance, and good conductivity. In addition to the above, the present invention has a practical effect as a transmission or reflection type electrode substrate for a display device which has a high visible light transmittance or a reflectance and is excellent in storage stability without deterioration over time.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の透過型の表示装置用電極基板の側断面
図。
FIG. 1 is a side sectional view of a transmission type electrode substrate for a display device of the present invention.

【図2】本発明の反射型の表示装置用電極基板の側断面
図。
FIG. 2 is a side sectional view of an electrode substrate for a reflective display device of the present invention.

【図3】本発明の反射型の表示装置用電極基板の分光反
射率を示すグラフ。
FIG. 3 is a graph showing the spectral reflectance of a reflective display device electrode substrate of the present invention.

【図4】本発明の透過型の表示装置用電極基板の分光透
過率を示すグラフ。
FIG. 4 is a graph showing the spectral transmittance of a transmission type electrode substrate for a display device of the present invention.

【図5】本発明の透過型の表示装置用電極基板における
銀系導電薄膜への銅の添加量率とその時の分光透過率と
の関係を示すグラフ。
FIG. 5 is a graph showing the relationship between the amount of copper added to a silver-based conductive thin film and the spectral transmittance at that time in the transmission-type display device electrode substrate of the present invention.

【図6】屈折率2の透明な酸化物系導電薄膜を用いた透
過型の表示装置用電極基板において、測定媒質の屈折率
が1.0の場合のシミュレーションによる分光透過率T
と分光反射率Rを示すグラフBと、測定媒質の屈折率が
1.5の場合のシミュレーションによる分光透過率Tと
分光反射率Rを示すグラフA。
FIG. 6 shows a spectral transmittance T obtained by simulation when a refractive index of a measurement medium is 1.0 in a transmission-type electrode substrate for a display device using a transparent oxide-based conductive thin film having a refractive index of 2;
And a graph B showing the spectral reflectance R and a graph A showing the spectral transmittance T and the spectral reflectance R by simulation when the refractive index of the measurement medium is 1.5.

【図7】本発明の透過型の表示装置用電極基板におい
て、透明な酸化物系導電薄膜の各種の屈折率(2.0〜
2.4)と透過率との関係を示すグラフ。
FIG. 7 is a cross-sectional view of a transmission type electrode substrate for a display device according to the present invention.
The graph which shows the relationship between 2.4) and transmittance | permeability.

【図8】本発明の反射型の表示電極基板における各々銀
系導電薄膜層上の酸化物系透明導電薄膜層の膜厚(30
nm〜60nm)と、その分光反射率のシミュレーショ
ン結果を示すグラフ。
FIG. 8 shows the thickness (30) of the oxide-based transparent conductive thin film layer on each of the silver-based conductive thin film layers in the reflective display electrode substrate of the present invention.
and a graph showing simulation results of the spectral reflectance.

【図9】本発明の反射型の表示電極基板における各々銀
系導電薄膜層上の酸化物系透明導電薄膜層の膜厚(70
nm〜110nm)と、その分光反射率のシミュレーシ
ョン結果を示すグラフ。
FIG. 9 shows the thickness (70) of the oxide-based transparent conductive thin film layer on each of the silver-based conductive thin film layers in the reflective display electrode substrate of the present invention.
and a graph showing simulation results of the spectral reflectance.

【図10】本発明の透過型の表示電極基板の銀系導電薄
膜の膜厚と透過率(反射率)とのシミュレーション結果
による関係を示すグラフ。
FIG. 10 is a graph showing the relationship between the thickness of a silver-based conductive thin film and the transmittance (reflectance) of a transmission-type display electrode substrate according to the present invention based on simulation results.

【図11】本発明の反射型の表示電極基板の銀系導電薄
膜の膜厚と反射率とのシミュレーション結果による関係
を示すグラフ。
FIG. 11 is a graph showing a relationship between a film thickness of a silver-based conductive thin film of a reflective display electrode substrate of the present invention and a reflectance based on a simulation result.

【図12】従来の液晶ディスプレイ装置の透過型の表示
電極基板の側断面図。
FIG. 12 is a side sectional view of a transmission type display electrode substrate of a conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

10…基板 11…透明な導電性の接着層 12…銀系
透明導電薄膜層 13…酸化物系透明導電薄膜層 14…透明導電膜 1
5…透過型表示電極基板 20…基板 21…導電性の接着層 22…銀系導電薄
膜層 23…酸化物系透明導電薄膜層 24…反射導電膜 2
5…反射型表示電極基板 30…基板 31…カラーフィルタ層 32…遮光膜層 33…透明保護層 34…透明導電層 35…配向膜層
DESCRIPTION OF SYMBOLS 10 ... Substrate 11 ... Transparent conductive adhesive layer 12 ... Silver-based transparent conductive thin film layer 13 ... Oxide-based transparent conductive thin film layer 14 ... Transparent conductive film 1
5: Transparent display electrode substrate 20: Substrate 21: Conductive adhesive layer 22: Silver-based conductive thin film layer 23: Oxide-based transparent conductive thin film layer 24: Reflective conductive film 2
5: reflective display electrode substrate 30: substrate 31: color filter layer 32: light-shielding film layer 33: transparent protective layer 34: transparent conductive layer 35: alignment film layer

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭49−115351(JP,A) 特開 平6−214252(JP,A) 特開 平6−18927(JP,A) 特開 平8−262203(JP,A) (58)調査した分野(Int.Cl.7,DB名) G09F 9/30 G02F 1/1343 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-49-115351 (JP, A) JP-A-6-214252 (JP, A) JP-A-6-18927 (JP, A) JP-A 8-108 262203 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) G09F 9/30 G02F 1/1343

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】基板上に導電性接着層と銀系導電薄膜層と
酸化物系透明導電薄膜層とをこの順に積層せしめた電極
基板において、銀系導電薄膜層が0.1〜2.5at%
の金及び0.3〜3.0at%の銅を添加した銀合金に
より形成され、酸化物系透明導電薄膜層が非晶質物質に
より形成されていることを特徴とする表示装置用電極基
板。
1. An electrode substrate having a conductive adhesive layer, a silver-based conductive thin film layer, and an oxide-based transparent conductive thin film layer laminated in this order on a substrate, wherein the silver-based conductive thin film layer has a thickness of 0.1 to 2.5 at. %
An electrode substrate for a display device, comprising an oxide-based transparent conductive thin film layer formed of an amorphous material, formed of a silver alloy to which gold and 0.3 to 3.0 at% of copper are added.
【請求項2】前記銀系導電薄膜層の層厚が50〜200
nmの範囲内にあり、且つ酸化物系透明導電薄膜層の層
厚が40〜100nmの範囲内にある請求項1記載の表
示装置用電極基板。
2. The silver-based conductive thin film layer has a thickness of 50 to 200.
2. The electrode substrate for a display device according to claim 1, wherein the thickness of the oxide-based transparent conductive thin film layer is in the range of 40 to 100 nm.
【請求項3】前記銀系導電薄膜層の層厚が5〜25nm
の範囲内にあって、前記導電性接着層が、前記酸化物系
透明導電薄膜層と同種の酸化物を含有する請求項1記載
の表示装置用電極基板。
3. The silver-based conductive thin film layer has a thickness of 5 to 25 nm.
The electrode substrate for a display device according to claim 1, wherein the conductive adhesive layer contains an oxide of the same type as the oxide-based transparent conductive thin film layer.
【請求項4】前記導電性接着層及び酸化物系透明導電薄
膜層の全体若しくは一部が、屈折率2.1より大きい酸
化物を含有する請求項3記載の表示装置用電極基板。
4. The electrode substrate for a display device according to claim 3, wherein the whole or a part of the conductive adhesive layer and the oxide-based transparent conductive thin film layer contains an oxide having a refractive index greater than 2.1.
【請求項5】前記導電性接着層及び酸化物系透明導電薄
膜層が、酸化セリウムと酸化チタンのうちいずれか一方
若しくは両方より選ばれた酸化物を含有する請求項3又
は請求項4記載の表示装置用電極基板。
5. The method according to claim 3, wherein the conductive adhesive layer and the oxide-based transparent conductive thin film layer contain an oxide selected from one or both of cerium oxide and titanium oxide. An electrode substrate for a display device.
【請求項6】前記導電性接着層及び酸化物系透明導電薄
膜層が、酸化インジウムを含有する請求項3乃至請求項
5記載の表示装置用電極基板。
6. The electrode substrate for a display device according to claim 3, wherein said conductive adhesive layer and said oxide-based transparent conductive thin film layer contain indium oxide.
JP11906596A 1996-05-14 1996-05-14 Electrode substrate for display device Expired - Fee Related JP3063618B2 (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11906596A JP3063618B2 (en) 1996-05-14 1996-05-14 Electrode substrate for display device

Publications (2)

Publication Number Publication Date
JPH09305126A JPH09305126A (en) 1997-11-28
JP3063618B2 true JP3063618B2 (en) 2000-07-12

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000147540A (en) * 1998-11-17 2000-05-26 Toppan Printing Co Ltd Electrode substrate and method of manufacturing the same
KR100667637B1 (en) 1998-12-28 2007-01-12 아사히 가라스 가부시키가이샤 Laminate and its manufacturing method
JP3841040B2 (en) 2002-10-25 2006-11-01 セイコーエプソン株式会社 ELECTRO-OPTICAL DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
JP4089544B2 (en) * 2002-12-11 2008-05-28 ソニー株式会社 Display device and manufacturing method of display device
JP4517304B2 (en) * 2002-12-11 2010-08-04 ソニー株式会社 Display device and manufacturing method of display device
JP4362696B2 (en) 2003-03-26 2009-11-11 ソニー株式会社 LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
DE102004002587B4 (en) * 2004-01-16 2006-06-01 Novaled Gmbh Image element for an active matrix display
WO2008007770A1 (en) * 2006-07-14 2008-01-17 Dai Nippon Printing Co., Ltd. Transparent conducting layer coated film and its use
JP5114961B2 (en) * 2006-07-14 2013-01-09 大日本印刷株式会社 Film with transparent conductive film and display substrate, display, liquid crystal display device and organic EL element comprising the film with transparent conductive film
US20090316060A1 (en) * 2008-06-18 2009-12-24 3M Innovative Properties Company Conducting film or electrode with improved optical and electrical performance
JP5425423B2 (en) * 2008-07-16 2014-02-26 日東電工株式会社 Transparent conductive film and touch panel, and method for producing transparent conductive film
CN105845752B (en) * 2016-04-04 2017-07-11 广州新视界光电科技有限公司 It is a kind of applied to transparent conductive film of flexible photoelectric device and preparation method thereof

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