JP3066232B2 - Semiconductor wafer heat treatment equipment - Google Patents
Semiconductor wafer heat treatment equipmentInfo
- Publication number
- JP3066232B2 JP3066232B2 JP5225089A JP22508993A JP3066232B2 JP 3066232 B2 JP3066232 B2 JP 3066232B2 JP 5225089 A JP5225089 A JP 5225089A JP 22508993 A JP22508993 A JP 22508993A JP 3066232 B2 JP3066232 B2 JP 3066232B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- tube
- semiconductor wafer
- furnace core
- treatment chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 title claims description 53
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000002210 silicon-based material Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 239000012535 impurity Substances 0.000 description 12
- 239000010453 quartz Substances 0.000 description 9
- 238000002791 soaking Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウェーハの製造
または処理工程等に使用される縦型熱処理炉、ＣＶＤ
炉、エピタキシャル成長炉等の半導体ウェーハ熱処理装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical heat treatment furnace,
The present invention relates to a semiconductor wafer heat treatment apparatus such as a furnace and an epitaxial growth furnace.
【０００２】[0002]
【従来の技術】半導体ウェーハの製造または処理工程に
おいては、半導体ウェーハに各種の性質を付与するため
熱処理作業が行われている。かかる熱処理作業に使用さ
れる熱処理装置は、石英材料からなる炉芯管やベルジャ
ーの内部に熱処理室が形成されている。そして、この熱
処理室内に半導体ウェーハを配置するとともに、所定の
処理ガスを熱処理室内に供給し、かつ炉芯管やベルジャ
ーの外周に配置したヒータによって熱処理室内の半導体
ウェーハを加熱する構成となっている。2. Description of the Related Art In a process of manufacturing or processing a semiconductor wafer, a heat treatment is performed to impart various properties to the semiconductor wafer. In a heat treatment apparatus used for such a heat treatment operation, a heat treatment chamber is formed inside a furnace core tube or a bell jar made of a quartz material. The semiconductor wafer is disposed in the heat treatment chamber, a predetermined processing gas is supplied into the heat treatment chamber, and the semiconductor wafer in the heat treatment chamber is heated by a heater disposed on the outer periphery of the furnace core tube or the bell jar. .
【０００３】[0003]
【発明が解決しようとする課題】熱処理室の内部に金属
不純物が混入すると、その内部に配置された半導体ウェ
ーハが金属成分によって汚染され、結晶欠陥の発生が加
速する等、製品歩留の低下や、品質劣化の原因となるこ
とが知られている。しかしながら、石英材料からなる炉
芯管やベルジャーは、例えば１１００℃という高温状態
のもとでは、外部に存在するＣｕ、Ｆｅ等の金属不純物
を微量ながらも透過させてしまう性質があった。特に、
熱処理室内が還元性または不活性雰囲気を形成していた
場合に、金属不純物の透過が顕著に生じていた。本発明
は、このような事情に鑑みなされたもので、熱処理室内
への金属不純物の混入をなくし、半導体ウェーハの製品
歩留を高めるとともに、品質の向上を図ることのできる
半導体ウェーハ熱処理装置の提供を目的とする。When metal impurities enter the interior of the heat treatment chamber, the semiconductor wafer disposed therein is contaminated by the metal component, and the generation of crystal defects is accelerated. Is known to cause quality deterioration. However, a furnace core tube and a bell jar made of quartz material have a property of transmitting a small amount of metal impurities such as Cu and Fe existing outside under a high temperature state of 1100 ° C., for example. In particular,
When a reducing or inert atmosphere was formed in the heat treatment chamber, permeation of metal impurities occurred remarkably. The present invention has been made in view of such circumstances, and provides a semiconductor wafer heat treatment apparatus capable of eliminating metal impurities from entering a heat treatment chamber, increasing the product yield of semiconductor wafers, and improving the quality. With the goal.
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するため
に本発明は、熱処理室内に配置した半導体ウェーハに対
し所定の熱処理を行う熱処理装置において、前記熱処理
室を形成する炉芯管の外周を粒状または粉状のポリシリ
コン材料により被覆して構成してある。ここで、前記炉
芯管は、石英ガラス製の内管と外管の二重管構造を有
し、前記内管と外管の間に形成された中空部内に粒状ま
たは粉状のポリシリコン材料が充填されているのが望ま
しい。According to the present invention, there is provided a heat treatment apparatus for performing a predetermined heat treatment on a semiconductor wafer disposed in a heat treatment chamber, wherein an outer periphery of a furnace core tube forming the heat treatment chamber is provided. It is configured by being coated with a granular or powdery polysilicon material. Here, the furnace core tube has a double tube structure of an inner tube and an outer tube made of quartz glass, and a granular or powdery polysilicon material is formed in a hollow portion formed between the inner tube and the outer tube. Is desirably filled.
【０００５】[0005]
【作用】熱処理室の外周を被覆するポリシリコン材料に
は、金属物質を吸着する性質がある。そのため、外部か
ら侵入しようとする金属不純物は、ポリシリコン材料に
吸着され、熱処理室内へ至ることがない。ここで、粒状
または粉状のポリシリコン材料を用いて熱処理室の外周
を被覆すれば、金属不純物を吸着する表面積が増大する
ため、一層効果的に金属不純物の熱処理室内への侵入を
阻止することができる。The polysilicon material covering the outer periphery of the heat treatment chamber has a property of adsorbing a metal substance. Therefore, the metal impurities that are to enter from the outside are adsorbed by the polysilicon material and do not reach the heat treatment chamber. Here, if the outer periphery of the heat treatment chamber is covered with a granular or powdered polysilicon material, the surface area for adsorbing metal impurities increases, so that the metal impurities can be more effectively prevented from entering the heat treatment chamber. Can be.
【０００６】[0006]
【実施例】以下、本発明にかかる半導体ウェーハの熱処
理装置について、その好ましい実施例を挙げ、具体的に
説明する。図１は本発明にかかる半導体ウェーハ熱処理
装置の実施例を示す正面断面図であり、特に、半導体製
造工程で用いられる縦型熱処理炉を示している。まず、
同図に示した縦型熱処理炉の概略構成を説明する。縦型
熱処理炉は、全体的に円筒形状の炉芯管１０を備えてい
る。炉芯管１０は下方に開口しており、その開口から半
導体ウェーハを出し入れする構成になっている。炉芯管
１０の内部には熱処理室１１が形成されている。半導体
ウェーハＷは、ウェーハ保持部材１２によって熱処理室
１１に配置される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the apparatus for heat treating a semiconductor wafer according to the present invention will now be described in detail. FIG. 1 is a front sectional view showing an embodiment of a semiconductor wafer heat treatment apparatus according to the present invention, and particularly shows a vertical heat treatment furnace used in a semiconductor manufacturing process. First,
A schematic configuration of the vertical heat treatment furnace shown in FIG. The vertical heat treatment furnace includes a furnace tube 10 having a cylindrical shape as a whole. The furnace core tube 10 is open downward, and has a configuration in which a semiconductor wafer is taken in and out through the opening. A heat treatment chamber 11 is formed inside the furnace core tube 10. The semiconductor wafer W is arranged in the heat treatment chamber 11 by the wafer holding member 12.
【０００７】熱処理室１１内には処理ガス導入管１３が
設けてあり、所定の処理ガスを導入できる構成になって
いる。同様に、熱処理室１１内には処理ガス排出管１４
が設けてあり、処理用のガスを排出する構成になってい
る。ウェーハ保持部材１２は、複数の遮熱板１２ａを有
し、かつ保持した半導体ウェーハＷを鉛直軸を中心に回
転させる構成になっている。ウェーハ保持部材１２は、
炉蓋１５に設置してあり、炉蓋１５はベース１６に固定
してある。ベース１６は図示しない上下駆動機構によっ
て駆動され、ウェーハ保持部材１２を炉芯管１０に対し
て挿脱する。A processing gas introduction pipe 13 is provided in the heat treatment chamber 11 so that a predetermined processing gas can be introduced. Similarly, the processing gas discharge pipe 14 is provided in the heat treatment chamber 11.
Is provided, and the processing gas is discharged. The wafer holding member 12 has a plurality of heat shield plates 12a, and is configured to rotate the held semiconductor wafer W about a vertical axis. The wafer holding member 12
It is installed on the furnace lid 15, and the furnace lid 15 is fixed to the base 16. The base 16 is driven by a vertical drive mechanism (not shown), and inserts and removes the wafer holding member 12 with respect to the furnace core tube 10.
【０００８】炉芯管１０の外側には、均熱管１７が設け
てある。均熱管１７は全体的に円筒形状をしていて、下
方に開口している。均熱管は、ＳｉＣまたはＳｉ含浸の
ＳｉＣで構成してある。均熱管１７の上部には排気管１
８が設けてある。一方、均熱管１７の下端外周部にはス
テンレス製の架台１９が設けてある。架台１９の下には
均熱管支持部材２０がねじ止めして設けてある。この均
熱管支持部材２０の上に均熱管１７が設置してある。均
熱管支持部材２０には、ガス導入管２１が設置してあ
り、炉芯管１０と均熱管１７の間に形成された空間にガ
スを導入する構成になっている。ガス導入管２１によっ
て導入されたガス、例えば塩酸ガスを含んだ窒素ガス
は、均熱管上部に設けた排気管２２から排出される。A heat equalizing tube 17 is provided outside the furnace core tube 10. The heat equalizing tube 17 has a cylindrical shape as a whole and opens downward. The soaking tube is made of SiC or Si-impregnated SiC. The exhaust pipe 1 is located above the soaking pipe 17.
8 are provided. On the other hand, a stainless steel base 19 is provided on the outer periphery of the lower end of the heat equalizing tube 17. Below the gantry 19, a soaking tube support member 20 is provided by screwing. The heat equalizing tube 17 is provided on the heat equalizing tube support member 20. A gas introduction pipe 21 is provided on the soaking tube support member 20, and is configured to introduce gas into a space formed between the furnace core tube 10 and the soaking tube 17. The gas introduced by the gas introduction pipe 21, for example, a nitrogen gas containing hydrochloric acid gas, is exhausted from an exhaust pipe 22 provided above the heat equalizing pipe.
【０００９】均熱管支持部材２０と炉蓋１５の間には、
炉芯管支持部材２３が配置してあり、均熱管支持部材２
０にねじ止めされている。炉芯管支持部材２３の上には
炉芯管１０が設置され、炉芯管１０と炉芯管支持部材２
３の接触部分には図示しないがテフロン製のＯリングが
設けてあり、炉内の気密性を高めている。均熱管１７の
外側にはヒータ２４が配置してあり、さらにヒータ２４
の外側には、例えば断熱ファイバからなる断熱体２５が
設けてある。Between the soaking tube support member 20 and the furnace lid 15,
A furnace core tube supporting member 23 is disposed, and the heat equalizing tube supporting member 2 is provided.
Screwed to zero. The furnace core tube 10 is installed on the furnace core tube supporting member 23, and the furnace core tube 10 and the furnace core tube supporting member 2 are provided.
Although not shown, an O-ring made of Teflon is provided at the contact portion of No. 3 to improve the airtightness in the furnace. A heater 24 is disposed outside the soaking tube 17.
A heat insulator 25 made of, for example, a heat insulating fiber is provided on the outer side.
【００１０】上述した構成の半導体ウェーハ熱処理装置
において、炉芯管１０は石英ガラス製の内管１０ａと外
管１０ｂの二重管構造となっている。そして、これら内
管１０ａと外管１０ｂの間に形成された中空部内には、
粒状のポリシリコン材料３０が充填されている。ポリシ
リコン材料３０は、Ｆｅ、Ｃｒ、Ｎｉ、Ｃｕなどの金属
物質を吸着する性質を有する。したがって、炉芯管１０
の外部から熱処理室１１内に侵入しようとする金属不純
物は、中空部内に充填されたポリシリコン材料３０の表
面に吸着され、熱処理室１１内への侵入を阻止される。
中空部（すなわち、ポリシリコン材料層）の厚さは任意
でよいが、あまり厚過ぎると熱伝導性が悪化し、一方薄
過ぎた場合は金属不純物の吸着性能が劣化するため、こ
れら熱伝導性と吸着性能の各々を考慮して適当な厚さを
設定する。個々の粒状ポリシリコン材料３０の直径は、
可能な限り小さくした方が表面積も増加し、かつ中空部
内に密に充填されるため好ましい。また、上記中空部内
に粉状のポリシリコン材料を充填してもよい。In the semiconductor wafer heat treatment apparatus having the above-described configuration, the furnace core tube 10 has a double tube structure of an inner tube 10a and an outer tube 10b made of quartz glass. And, in the hollow portion formed between the inner tube 10a and the outer tube 10b,
A granular polysilicon material 30 is filled. The polysilicon material 30 has a property of adsorbing a metal substance such as Fe, Cr, Ni, and Cu. Therefore, the furnace core tube 10
The metal impurities that are going to enter the heat treatment chamber 11 from outside are adsorbed on the surface of the polysilicon material 30 filled in the hollow portion, and are prevented from entering the heat treatment chamber 11.
The thickness of the hollow portion (that is, the polysilicon material layer) may be arbitrary, but if it is too thick, the thermal conductivity deteriorates. An appropriate thickness is set in consideration of the pressure and the adsorption performance. The diameter of each granular polysilicon material 30 is
It is preferable to make it as small as possible because the surface area increases and the hollow portion is densely filled. Further, the hollow portion may be filled with a powdery polysilicon material.
【００１１】図２は本発明の他の実施例を示す正面断面
図である。すなわち、一枚の石英ガラスからなる炉芯管
４０と均熱管１７の間に、内部が中空の石英管４１を設
置し、この石英管４１の中空部内に粒状ポリシリコン材
料４２を充填した構成とすることもできる。このように
構成した場合でも、石英管４１内のポリシリコン材料が
金属不純物を吸着するので、熱処理室１１内への金属不
純物の侵入を阻止することができる。この石英管４１
は、均熱管支持部材２０上に設置されている。なお、ガ
ス導入管２１は、石英管４１の外部および内部の双方に
開口している。石英管４１の上壁中央部には、ガス導入
管２１から導入されたガスを排出するための排出口４２
が形成してある。FIG. 2 is a front sectional view showing another embodiment of the present invention. That is, between the furnace core tube 40 made of one piece of quartz glass and the soaking tube 17, a hollow quartz tube 41 is installed, and a granular polysilicon material 42 is filled in the hollow portion of the quartz tube 41. You can also. Even in such a configuration, since the polysilicon material in the quartz tube 41 adsorbs metal impurities, it is possible to prevent metal impurities from entering the heat treatment chamber 11. This quartz tube 41
Is installed on the soaking tube support member 20. Note that the gas introduction pipe 21 is open both outside and inside the quartz tube 41. At the center of the upper wall of the quartz tube 41, an outlet 42 for discharging gas introduced from the gas introduction tube 21 is provided.
Is formed.
【００１２】実施例よび比較例 図１に示した構成の熱処理装置（実施例）と、炉芯管が
一枚の石英ガラスからなり、炉芯管外部にポリシリコン
材料が配置されていない従来の熱処理装置（比較例）と
を使用し、酸化雰囲気下において１１００℃で５時間の
熱処理をシリコンウェーハに対して実施した。上記構成
の本実施例装置と比較例装置とで熱処理を施したシリコ
ンウェーハの表面を原子吸光法分析によって測定し、同
表面に吸着している重金属不純物の量を検出した。その
結果を表１に示す。なお、表１において「＜１」は、検
出限界以下の値であったことを示す。表１から明らかな
ように、本実施例の熱処理装置は、金属部コーティング
層のない比較例と比べ、被処理ウェーハの金属汚染量が
著しく低減した。Example and Comparative Example A conventional heat treatment apparatus (embodiment) having the structure shown in FIG. 1 and a furnace core tube made of one piece of quartz glass and no polysilicon material arranged outside the furnace core tube. Using a heat treatment apparatus (comparative example), heat treatment was performed on the silicon wafer at 1100 ° C. for 5 hours in an oxidizing atmosphere. The surfaces of the silicon wafers subjected to the heat treatment in the apparatus of this embodiment and the apparatus of the comparative example having the above-described configurations were measured by atomic absorption spectrometry, and the amount of heavy metal impurities adsorbed on the surfaces was detected. Table 1 shows the results. In Table 1, "<1" indicates that the value was below the detection limit. As is evident from Table 1, the heat treatment apparatus of this example significantly reduced the amount of metal contamination on the wafer to be processed, as compared with the comparative example having no metal coating layer.
【００１３】[0013]
【表１】( ×1010atms/cm2) [Table 1] (× 10 10 atms / cm 2 )
【００１４】[0014]
【発明の効果】以上説明したように、本発明の半導体ウ
ェーハ熱処理装置によれば、前記熱処理室を形成する炉
芯管の外周を粒状または粉状のポリシリコン材料によっ
て被覆したので、外部に発生した金属不純物をこのポリ
シリコン材料が吸着し、熱処理室内への侵入を阻止する
ことができる。その結果、熱処理室内に配置した半導体
ウェーハに対して結晶欠陥の発生を抑止し、製品歩留の
向上と、品質の向上を図ることができる。As described above, according to the semiconductor wafer heat treatment apparatus of the present invention, since the outer periphery of the furnace core tube forming the heat treatment chamber is covered with the granular or powdery polysilicon material, it is generated outside. The polysilicon material adsorbs the metal impurities thus generated, and can be prevented from entering the heat treatment chamber. As a result, generation of crystal defects in the semiconductor wafer placed in the heat treatment chamber can be suppressed, and the product yield and the quality can be improved.
【図１】本発明にかかる半導体ウェーハ熱処理装置の実
施例を示す正面断面図。FIG. 1 is a front sectional view showing an embodiment of a semiconductor wafer heat treatment apparatus according to the present invention.
【図２】本発明にかかる半導体ウェーハ熱処理装置の他
の実施例を示す正面断面図。FIG. 2 is a front sectional view showing another embodiment of the semiconductor wafer heat treatment apparatus according to the present invention.
１０、４０ 炉芯管 １０ａ 内管 １０ｂ 外管 １１ 熱処理室 １３ 処理ガス導入管 １４ 処理ガス排出管 １５ 炉蓋 １６ ベース １７ 均熱管 １９ 架台 ２０ 均熱管支持部材 ２１ ガス導入管 ２２ 排気管 ２３ 炉芯管支持部材 ２４ ヒータ ３０，４２ ポリシリコン材料 ４１ 石英管 DESCRIPTION OF SYMBOLS 10, 40 Furnace core tube 10a Inner tube 10b Outer tube 11 Heat treatment room 13 Processing gas introduction tube 14 Processing gas discharge tube 15 Furnace lid 16 Base 17 Heat equalization tube 19 Mounting stand 20 Heat equalization tube support member 21 Gas introduction tube 22 Exhaust tube 23 Core Tube support member 24 Heater 30, 42 Polysilicon material 41 Quartz tube
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 H01L 21/22 511 H01L 21/324 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/205 H01L 21/22 511 H01L 21/324
Claims (2)
対し所定の熱処理を行う熱処理装置において、 前記熱処理室を形成する炉芯管の外周を粒状または粉状
のポリシリコン材料によって被覆したことを特徴とする
半導体ウェーハの熱処理装置。1. A heat treatment apparatus for performing a predetermined heat treatment on a semiconductor wafer disposed in a heat treatment chamber, wherein an outer periphery of a furnace core tube forming the heat treatment chamber is coated with a granular or powdery polysilicon material. Semiconductor wafer heat treatment equipment.
管の二重管構造を有し、前記内管と外管の間に形成され
た中空部内に粒状または粉状のポリシリコン材料が充填
されていることを特徴とする請求項１に記載された半導
体ウェーハの熱処理装置。2. The furnace core tube has a double tube structure of an inner tube and an outer tube made of quartz glass, and a granular or powdery poly is formed in a hollow portion formed between the inner tube and the outer tube. The heat treatment apparatus for a semiconductor wafer according to claim 1, wherein the heat treatment apparatus is filled with a silicon material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5225089A JP3066232B2 (en) | 1993-08-18 | 1993-08-18 | Semiconductor wafer heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5225089A JP3066232B2 (en) | 1993-08-18 | 1993-08-18 | Semiconductor wafer heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0758037A JPH0758037A (en) | 1995-03-03 |
| JP3066232B2 true JP3066232B2 (en) | 2000-07-17 |
Family
ID=16823835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5225089A Expired - Fee Related JP3066232B2 (en) | 1993-08-18 | 1993-08-18 | Semiconductor wafer heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3066232B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4493823B2 (en) * | 2000-09-20 | 2010-06-30 | 東京エレクトロン株式会社 | Vertical heat treatment equipment |
| WO2008016143A1 (en) * | 2006-08-04 | 2008-02-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
-
1993
- 1993-08-18 JP JP5225089A patent/JP3066232B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0758037A (en) | 1995-03-03 |
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