JP3069366B2 - Manufacturing method of crystal unit - Google Patents
Manufacturing method of crystal unitInfo
- Publication number
- JP3069366B2 JP3069366B2 JP2202929A JP20292990A JP3069366B2 JP 3069366 B2 JP3069366 B2 JP 3069366B2 JP 2202929 A JP2202929 A JP 2202929A JP 20292990 A JP20292990 A JP 20292990A JP 3069366 B2 JP3069366 B2 JP 3069366B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- blank
- cylindrical container
- main surface
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
【発明の詳細な説明】 (発明の技術分野) 本発明は、水晶振動子およびその加工方法に係わり、
特に生産性および歩どまりの向上に関する。Description: TECHNICAL FIELD The present invention relates to a crystal resonator and a processing method thereof,
In particular, it relates to improvement of productivity and yield.
(発明の技術的背景とその問題点) たとえば水晶振動子の製造工程では、人工水晶の結晶
から短冊状の水晶ウェハーを切り出し、この水晶ウェハ
ーから個々の水晶振動子に相当するブランクを得るよう
にしている。(Technical Background of the Invention and Problems Thereof) For example, in the process of manufacturing a quartz oscillator, a strip-shaped quartz wafer is cut out from a crystal of artificial quartz, and blanks corresponding to individual quartz oscillators are obtained from the quartz wafer. ing.
従来、水晶ウェハーからブランクを得る加工方法で
は、まず水晶ウェハーの段階で所望の共振周波数の厚み
に研磨する。この水晶ウェハーは、たとえば長さ30mm、
幅10mm、厚さ0.5mm程度の大きさである。Conventionally, in a processing method for obtaining a blank from a quartz wafer, first, at the stage of the quartz wafer, polishing is performed to a thickness having a desired resonance frequency. This quartz wafer is, for example, 30 mm long,
It is about 10mm wide and 0.5mm thick.
そして、第2図に示すように板面を鋸歯状に成形した
治具1の傾斜面1aにそれぞれ水晶ウェハー2の主面2aを
接着する。Then, as shown in FIG. 2, the main surface 2a of the crystal wafer 2 is bonded to the inclined surface 1a of the jig 1 whose surface is formed in a sawtooth shape.
そして治具1に保持した水晶ウェハー2の主面と側面
の交わる部分、すなわち稜2bを研磨して除去する。なお
同様の作業を4回繰り返して水晶ウェハー2の幅方向の
各稜2bを研磨し角度5゜程度のナイフエッジ状に成形す
る。Then, a portion where the main surface and the side surface of the crystal wafer 2 held by the jig 1 intersect, that is, the ridge 2b is polished and removed. The same operation is repeated four times to grind each ridge 2b in the width direction of the quartz wafer 2 to form a knife edge having an angle of about 5 °.
そしてこの水晶ウェハー2の主面を接着して順次に積
み重ね数十枚を貼り合わせる。そして多数のブレードを
切断幅に対応した間隔で並行に張設したマルチブレード
切断機を用いて、上記積み重ねた水晶ウェハー2を主面
に直角方向に所定の幅、たとえば2mmの幅に同時に切断
する。Then, the main surfaces of the crystal wafers 2 are adhered and stacked in order, and several tens of the wafers are adhered. Then, using a multi-blade cutter in which a number of blades are stretched in parallel at intervals corresponding to the cutting width, the stacked quartz wafers 2 are simultaneously cut into a predetermined width, for example, a width of 2 mm in a direction perpendicular to the main surface. .
次に水晶ウェハー2を個々の水晶片、すなわちブラン
クに分離し、研磨剤とともに円筒容器に収納して、該円
筒容器を回転駆動してその全周を研磨する。Next, the quartz wafer 2 is separated into individual quartz pieces, that is, blanks, stored in a cylindrical container together with an abrasive, and the cylindrical container is rotated to grind the entire periphery.
そして稜角を研磨して除去したブランクの主面に振動
電極を形成するようにしている。Then, a vibrating electrode is formed on the main surface of the blank whose edge angle has been polished and removed.
そしてブランクの端部の厚みを薄く成形することによ
って振動を板面の中央部分に閉じこめて良好に振動特性
を得るようにしている。The vibration is confined in the center of the plate surface by shaping the thickness of the blank end portion to be thin so that good vibration characteristics can be obtained.
しかしながら、このようなものでは特に水晶ウェハー
の幅方向の稜を研磨して除去する作業がめんどうで生産
性を著しく低下させる。すなわち、厚さ0.5mm程度の板
状ウェハーの幅方向の稜を角度5゜程度のナイフエッヂ
状に研磨して成形しなければならない。しかしながら厚
みの薄い水晶ウェハーの端部を斜めに研磨しなければな
らないので割れ、欠け等の損傷を極めて発生し易い。そ
して、この研磨作業では主面を加工するために、ここに
損傷を生じる振動特性を著しく阻害して水晶振動子とし
て実用に供し得ない。またこのような作業はほとんど手
作業に頼るために熟練を必要とし生産上のネックになり
易い問題があった。However, in such a method, the work of polishing and removing the ridge in the width direction of the quartz wafer is troublesome, and the productivity is significantly reduced. That is, the widthwise ridge of a plate-like wafer having a thickness of about 0.5 mm must be polished and formed into a knife-edge shape having an angle of about 5 °. However, since the edge of the thin quartz wafer must be polished diagonally, damages such as cracks, chips, etc., are very likely to occur. In this polishing operation, since the main surface is machined, the vibration characteristics that cause damage here are significantly impaired, and cannot be put to practical use as a quartz oscillator. In addition, such a work has a problem in that it requires skill because it depends on manual work, and is likely to become a bottleneck in production.
(発明の目的) 本発明は、上記の事情に鑑みてなされたもので、水晶
片の加工工程を合理化し、製造時の不良の発生も少な
く、生産性を高めることができる水晶振動子およびその
加工方法を提供することを目的とするものである。(Object of the Invention) The present invention has been made in view of the above circumstances, and a quartz crystal resonator that streamlines the processing steps of a crystal blank, has less occurrence of defects during manufacturing, and can increase productivity, and a crystal resonator therefor. It is an object to provide a processing method.
(発明の概要) 本発明は、長方形の水晶ブランクの長手方向の両端部
を両側から斜めに切除して研磨剤とともに回転する円筒
容器に収納して研磨し主面に励振電極を形成した水晶振
動子、および短冊状の水晶ウェハーの主面を接着して貼
り合わせ、主面に直角に所定幅に切断した後主面の両端
部を両側から斜めに切除して個々に分離して研磨剤とと
もに円筒容器に収納して該円筒容器を回転駆動して研磨
し主面に励振電極を形成する加工方法を特徴とするもの
である。(Summary of the Invention) The present invention relates to a quartz vibrator in which a rectangular crystal blank is obliquely cut off from both sides in the longitudinal direction, stored in a cylindrical container that rotates together with an abrasive, and polished to form an excitation electrode on a main surface. The main surface of the crystal wafer and the strip-shaped crystal wafer are bonded and bonded, cut to a predetermined width at right angles to the main surface, and both ends of the main surface are cut off diagonally from both sides to separate individually and with the abrasive. The present invention is characterized by a processing method in which a cylindrical container is housed in a cylindrical container, and the cylindrical container is rotationally driven and polished to form an excitation electrode on a main surface.
(実施例) 以下、本発明の一実施例の加工方法を第1図(a)な
いし第1図(e)を参照して詳細に説明する。(Example) Hereinafter, a processing method according to an example of the present invention will be described in detail with reference to FIGS. 1 (a) to 1 (e).
まず第1の工程では第1図(a)に示すように所定枚
数の水晶ウェハー11を、その主面11aを貼り合わせて積
み重ねる。この接着作業は、たとえばパラフィン系の熱
可塑性の接着剤を用いて行う。First, in a first step, as shown in FIG. 1 (a), a predetermined number of crystal wafers 11 are stacked with their main surfaces 11a bonded together. This bonding operation is performed using, for example, a paraffin-based thermoplastic adhesive.
ついで第2の工程で上記水晶ウェハー11を主面に直角
に所定幅w、たとえば2mm幅に切断する。Next, in the second step, the quartz wafer 11 is cut into a predetermined width w, for example, a width of 2 mm at right angles to the main surface.
そして第3の工程では第1図(b)に示すように第2
の工程で所定幅に切断した水晶ウェハー11の主面11aの
両端部を両側から斜めに切除する。なおこの作業は、た
とえばダイヤモンドホイールを用いた自動外周刃切断器
によって効率よく行うことができる。Then, in the third step, as shown in FIG.
The two ends of the main surface 11a of the crystal wafer 11 cut to a predetermined width in the step are cut obliquely from both sides. This operation can be efficiently performed by, for example, an automatic outer peripheral blade cutter using a diamond wheel.
次に第4の工程では第1の工程で接着した水晶ウェハ
ーを、たとえば100℃程度に加熱して個々に分離し、た
とえば第1図(c)に示すような形状の、いわゆるブラ
ンク12とする。Next, in a fourth step, the quartz wafers bonded in the first step are heated to, for example, about 100 ° C. and separated into individual pieces, for example, so-called blanks 12 having a shape as shown in FIG. 1 (c). .
そして第5の工程では、たとえば第1図(d)に示す
ような黄銅製の円筒容器13に研磨剤とともに上記ブラン
ク12を収納して密閉し、該容器13を回転駆動する。そし
てブランク12の全周を研磨し、たとえば第1図(e)に
示すように全ての稜角を曲面に成形する。この研磨加工
においてブランク12の両端部は幅狭になっているので幅
方向のみならず厚み方向にも充分に研磨がなされて端部
の厚みを薄くできる。したがって振動エネルギーを板面
の中央部に閉じこめることができる良好な振動特性を得
られる。In the fifth step, the blank 12 is stored together with the abrasive in a cylindrical container 13 made of, for example, brass as shown in FIG. 1 (d) and hermetically closed, and the container 13 is driven to rotate. Then, the entire circumference of the blank 12 is polished, and all the ridge angles are formed into curved surfaces, for example, as shown in FIG. 1 (e). In this polishing, both ends of the blank 12 are narrow, so that they are sufficiently polished not only in the width direction but also in the thickness direction, so that the thickness of the ends can be reduced. Therefore, good vibration characteristics can be obtained in which vibration energy can be confined at the center of the plate surface.
そして上記ブランクの主面に蒸着等により励振電極を
形成し、この電極を介して圧電振動を励振する。Then, an excitation electrode is formed on the main surface of the blank by vapor deposition or the like, and piezoelectric vibration is excited via this electrode.
このようにすれば、従来の加工方法のように水晶ウェ
ハー11から主面11aと側面の交わる稜を研磨する作業は
不要となるので生産性を著しく向上することができる。
そして所定幅wに切断した水晶ウェハー11の主面11aの
両端部の両側から斜めに切除する作業は、たとえばダイ
ヤモンドホイールを用いた自動外周刃切断器によって行
えるので作業効率も良好で不良品の発生も少ない。This eliminates the need for the work of polishing the ridge between the main surface 11a and the side surface from the quartz wafer 11 as in the conventional processing method, so that the productivity can be significantly improved.
The work of diagonally cutting both sides of both ends of the main surface 11a of the crystal wafer 11 cut to a predetermined width w can be performed by, for example, an automatic outer blade cutter using a diamond wheel, so that work efficiency is good and defective products are generated. Also less.
この従来の加工方法では、400個のブランクを得るた
めに1時間程度を要していたが上記実施例では10倍以上
の生産性の向上を図ることができる。In this conventional processing method, it took about one hour to obtain 400 blanks, but in the above embodiment, the productivity can be improved by a factor of 10 or more.
また、この切断加工の加工面は水晶ウェハー11の側面
であり、この加工時に多少のクラック等の損傷を生じて
も後工程で研磨剤とともに研磨することによって除去で
き不良品を著しく少なくできる利点がある。The processing surface of this cutting process is the side surface of the crystal wafer 11, and even if some damage such as cracks occurs during this processing, it can be removed by polishing with a polishing agent in a later process, and the defective product can be significantly reduced. is there.
(発明の効果) 以上詳述したように、本発明によれば加工工程の合理
化を図ることができ、生産性を高め得、不良の発生をも
少なくできる水晶片の加工方法を提供することができ
る。(Effects of the Invention) As described in detail above, according to the present invention, it is possible to provide a method for processing a crystal blank that can streamline processing steps, increase productivity, and reduce occurrence of defects. it can.
第1図(a)ないし第1図(e)は本発明の一実施例の
加工方法を説明する図で、同図(a)は第1、第2の工
程を説明する図、同図(b)は第3の工程を説明する
図、同図(c)は第4の工程のよって得られたブランク
の斜視図、同図(d)はブランクの研磨加工を行う円筒
容器の斜視図、同図(e)は研磨加工を行ったブランク
を示す斜視図である。 第2図は従来の水晶ウェハーの加工方法を示す側面図で
ある。 11……水晶ウェハー 11a……主面 12……ブランク 13……円筒容器1 (a) to 1 (e) are views for explaining a processing method according to one embodiment of the present invention, and FIG. 1 (a) is a view for explaining first and second steps. (b) is a view for explaining the third step, (c) is a perspective view of the blank obtained by the fourth step, (d) is a perspective view of a cylindrical container for polishing the blank, FIG. 3E is a perspective view showing the polished blank. FIG. 2 is a side view showing a conventional method for processing a quartz wafer. 11 ... Crystal wafer 11a ... Main surface 12 ... Blank 13 ... Cylindrical container
Claims (2)
て、前記円筒容器の回転によって前記水晶ブランクを全
体的に研磨するとともに、前記水晶ブランクの長手方向
の両端部に外周に向かって厚みが小さくなる曲面加工を
施す水晶振動数の製造方法において、前記水晶ブランク
の長手方向の両端部を両側から斜めに切除し、前記円筒
容器に投入して研磨したことを特徴とする水晶振動数の
製造方法。1. A quartz crystal blank having a rectangular shape is housed in a cylindrical container, and the quartz crystal blank is entirely polished by rotation of the cylindrical container. A method for manufacturing a crystal frequency, which performs a curved surface processing to reduce the size, wherein both ends in the longitudinal direction of the crystal blank are obliquely cut off from both sides, and the crystal blank is thrown into the cylindrical container and polished. Method.
み重ねる第1の工程と、この水晶ウェハーを上記主面に
直角に所定幅に切断する第2工程と、この水晶ウェハー
の主面の両端部を両側から斜めに切除する第3の工程
と、上記第1の工程で接着したウェハーを個々に分離し
て水晶ブランクを得る第4の工程と、上記水晶ブランク
を研磨剤とともに円筒容器に収納して該円筒容器を回転
駆動して研磨する第5の工程と、この水晶ブランクの主
面に励振電極を形成する第6の工程とを具備する水晶振
動子の製造方法。2. A first step of bonding and stacking a main surface of a rectangular crystal wafer, a second step of cutting the crystal wafer into a predetermined width at right angles to the main surface, and a main surface of the crystal wafer. A step of obliquely cutting both ends of the wafer from both sides, a fourth step of individually separating the wafers bonded in the first step to obtain a quartz blank, and a cylindrical container with the quartz blank together with an abrasive. A method for manufacturing a crystal resonator, comprising: a fifth step of rotating the cylindrical container and polishing the cylindrical container, and a sixth step of forming an excitation electrode on the main surface of the crystal blank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2202929A JP3069366B2 (en) | 1990-07-31 | 1990-07-31 | Manufacturing method of crystal unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2202929A JP3069366B2 (en) | 1990-07-31 | 1990-07-31 | Manufacturing method of crystal unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0487408A JPH0487408A (en) | 1992-03-19 |
| JP3069366B2 true JP3069366B2 (en) | 2000-07-24 |
Family
ID=16465499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2202929A Expired - Lifetime JP3069366B2 (en) | 1990-07-31 | 1990-07-31 | Manufacturing method of crystal unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3069366B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101775495B1 (en) * | 2016-02-25 | 2017-09-06 | 스토닉스 주식회사 | Crystal sensor for monitoring and making method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012127582A1 (en) | 2011-03-18 | 2012-09-27 | 富士通株式会社 | Method for producing electronic component, electronic component, and chip assembly |
-
1990
- 1990-07-31 JP JP2202929A patent/JP3069366B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101775495B1 (en) * | 2016-02-25 | 2017-09-06 | 스토닉스 주식회사 | Crystal sensor for monitoring and making method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0487408A (en) | 1992-03-19 |
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