JP3069832B2 - Teflon processing equipment - Google Patents
Teflon processing equipmentInfo
- Publication number
- JP3069832B2 JP3069832B2 JP7091008A JP9100895A JP3069832B2 JP 3069832 B2 JP3069832 B2 JP 3069832B2 JP 7091008 A JP7091008 A JP 7091008A JP 9100895 A JP9100895 A JP 9100895A JP 3069832 B2 JP3069832 B2 JP 3069832B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- mirror
- light
- teflon
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004809 Teflon Substances 0.000 title claims description 36
- 229920006362 Teflon® Polymers 0.000 title claims description 36
- 230000003287 optical effect Effects 0.000 claims description 11
- 230000005855 radiation Effects 0.000 description 6
- 230000005469 synchrotron radiation Effects 0.000 description 5
- 238000002679 ablation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
Landscapes
- Particle Accelerators (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、テフロン加工装置に関
し、特に大面積加工が可能なテフロン加工装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Teflon processing apparatus, and more particularly to a Teflon processing apparatus capable of processing a large area.
【０００２】[0002]
【従来の技術】テフロン（ポリテトラフルオロエチレ
ン）に、シンクロトロン放射光（ＳＲ光）を照射する
と、アブレーションが生じる。このことを利用して、テ
フロンに様々なパターンを形成する方法が、発明者らに
よって提案されている（特願平６−３２７５４５号）。
その方法は、テフロン前面に金属製のマスクを配置し、
マスクを透過したＳＲ光をテフロンに照射して、テフロ
ンに部分的なアブレーションを引き起こして、パターン
を形成するというものである。なお、テフロンのアブレ
ーションに必要なエネルギーは、光子エネルギーで約１
ｋｅＶ以下である。2. Description of the Related Art When Teflon (polytetrafluoroethylene) is irradiated with synchrotron radiation (SR light), ablation occurs. Utilizing this, a method of forming various patterns on Teflon has been proposed by the inventors (Japanese Patent Application No. 6-327545).
The method is to place a metal mask on the front of Teflon,
By irradiating the Teflon with SR light transmitted through the mask, the Teflon is partially ablated to form a pattern. The energy required for Teflon ablation is about 1 photon energy.
keV or less.
【０００３】[0003]
【発明が解決しようとする課題】シンクロトロンから放
射されるＳＲ光は、水平方向（シンクロトロンのリング
軌道を含む平面内）に広がりを有し、垂直方向（シンク
ロトロンのリング軌道を含む平面に垂直な平面内）にほ
とんど広がりを持たない。例えば、ＳＲ光の水平方向の
幅が約３０mmとなる位置での、垂直方向の幅は約２〜５
mmである。このように、ＳＲ光は、垂直方向の幅が極め
て狭いため、従来のテフロン加工装置では、大面積にわ
たってテフロンを加工することができない、という問題
点がある。The SR light emitted from the synchrotron has a spread in the horizontal direction (in a plane including the ring orbit of the synchrotron) and spreads in the vertical direction (in a plane including the ring orbit of the synchrotron). In a vertical plane). For example, at a position where the horizontal width of the SR light is about 30 mm, the vertical width is about 2 to 5 mm.
mm. As described above, since the SR light has a very narrow width in the vertical direction, there is a problem that a conventional Teflon processing apparatus cannot process Teflon over a large area.
【０００４】本発明は、大面積のテフロン加工が可能な
テフロン加工装置を提供することを目的とする。An object of the present invention is to provide a Teflon processing apparatus capable of processing a large area of Teflon.
【０００５】[0005]
【課題を解決するための手段】本発明によれば、放射光
を発生する放射光発生手段と、前記放射光を反射する反
射鏡と、該反射鏡を真空雰囲気下に置く反射鏡用真空槽
と、該反射鏡用真空槽を真空排気する第１の排気手段
と、前記反射鏡用真空槽に真空ダクトで連結され、被加
工材及びマスクを保持する加工用真空槽と、該加工用真
空槽を真空排気する第２の真空排気手段と、前記真空ダ
クト内に設けられ、前記反射鏡用真空槽と前記加工用真
空槽の間の通気を抑制するとともに、前記放射光を通過
させるオリフィスとを備え、該オリフィスが前記放射光
の光路形状に合わせて形成された開口部形状を有するこ
とを特徴とするテフロン加工装置。According to the present invention, there is provided a radiation generating means for generating radiation, a reflector for reflecting the radiation, and a vacuum chamber for the reflector for placing the reflector in a vacuum atmosphere. First evacuation means for evacuating the reflecting mirror vacuum chamber, a processing vacuum tank connected to the reflecting mirror vacuum chamber by a vacuum duct, and holding a workpiece and a mask; Second evacuation means for evacuating the tank, and provided in the vacuum duct, which suppresses ventilation between the reflecting mirror vacuum tank and the processing vacuum tank and allows the radiation light to pass therethrough.
An orifice for causing the emitted light to
A Teflon processing apparatus having an opening shape formed in accordance with the shape of the optical path .
【０００６】[0006]
【実施例】以下、図面を参照して本発明の実施例につい
て説明する。図１に本発明の第１の実施例を示す。図１
に示すように、本実施例のテフロン加工装置は、シンク
ロトロン放射光（ＳＲ光）を放射する放射光発生装置１
１、ミラー真空槽１２、平面ミラー１３、ミラー駆動機
構１４、真空排気ポンプ１５、真空ダクト１６、オリフ
ィス１７、加工用真空槽１８、及び真空排気ポンプ１９
を備えている。また、加工用真空槽１８の内部には、被
加工材であるテフロン２０とマスク２１とを保持する保
持具（図示せず）を有している。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a first embodiment of the present invention. FIG.
As shown in FIG. 1, the Teflon processing apparatus of the present embodiment is a synchrotron radiation device (SR light) emitting synchrotron radiation device 1
1. Mirror vacuum chamber 12, flat mirror 13, mirror driving mechanism 14, vacuum exhaust pump 15, vacuum duct 16, orifice 17, processing vacuum chamber 18, and vacuum exhaust pump 19.
It has. Further, inside the processing vacuum chamber 18, there is provided a holder (not shown) for holding the Teflon 20 and the mask 21 which are the workpieces.
【０００７】放射光発生装置１１のリング軌道は、図１
とは異なり、図の左右方向に平行で紙面に対して垂直な
平面内にあるものとする。したがって、図１の上下方向
が、ＳＲ光の垂直成分を表し、その成分は実質的に平行
光である。The ring orbit of the synchrotron radiation generator 11 is shown in FIG.
In contrast to this, it is assumed that they lie in a plane parallel to the left-right direction of the drawing and perpendicular to the paper surface. Therefore, the vertical direction in FIG. 1 represents the vertical component of the SR light, and the component is substantially parallel light.
【０００８】平面ミラー１３は、例えばＰｔミラーであ
って、入射ＳＲ光が斜入射角αで入射するように傾けら
れている。また、平面ミラー１３は、ミラー駆動機構１
４により、入射ＳＲ光の光路に沿って平行移動し、反射
ＳＲ光の光路を移動させる。ここで、平面ミラーの移動
距離をｌとすると、反射ＳＲ光の光路は、距離ｂ＝ｌsi
n ２α、だけ移動する。The plane mirror 13 is, for example, a Pt mirror, and is inclined so that incident SR light is incident at an oblique incident angle α. The plane mirror 13 is a mirror driving mechanism 1
By means of 4, the light is translated along the optical path of the incident SR light and moves the optical path of the reflected SR light. Here, assuming that the moving distance of the plane mirror is 1, the optical path of the reflected SR light is distance b = lsi
Move by n 2α.
【０００９】加工用真空槽１８では、テフロン２０及び
マスク２１に平面ミラー１３からの反射光が垂直に入射
するように、テフロン２０及びマスク２１は、２αの角
度をもって保持されている。したがって、平面ミラー１
３の移動によって、テフロン２０の表面上に照射される
ＳＲ光は距離ｂだけ移動する。In the processing vacuum chamber 18, the Teflon 20 and the mask 21 are held at an angle of 2α so that the reflected light from the plane mirror 13 is vertically incident on the Teflon 20 and the mask 21. Therefore, the plane mirror 1
By the movement of 3, the SR light irradiated on the surface of the Teflon 20 moves by the distance b.
【００１０】例えば、ＳＲ光の平面ミラー１３への入射
角αを１度（８０％程度の高反射率が得られる角度）、
平面ミラー１３の移動距離ｌを３００mmとすると、反射
ＳＲ光の光路は１０mm移動する。このとき、ＳＲ光の垂
直方向の幅ａを５mmとして、平面ミラー１３がすべての
ＳＲ光を反射するものとすると（長さｍが２８６mm以上
とすると）、ＳＲ光は、テフロン２０の表面上を幅１５
mmの範囲にわたって照射する。つまり、単に放射光発生
装置１１からのＳＲ光をテフロン２０に照射する場合に
比べ、３倍の範囲を照射することができる。For example, when the incident angle α of the SR light to the plane mirror 13 is 1 degree (an angle at which a high reflectance of about 80% is obtained),
Assuming that the moving distance 1 of the plane mirror 13 is 300 mm, the optical path of the reflected SR light moves by 10 mm. At this time, assuming that the vertical width a of the SR light is 5 mm and the plane mirror 13 reflects all the SR light (the length m is 286 mm or more), the SR light travels on the surface of the Teflon 20. Width 15
Irradiate over the range of mm. That is, it is possible to irradiate three times the range as compared with the case where the Teflon 20 is simply irradiated with the SR light from the radiation light generator 11.
【００１１】本実施例のテフロン加工装置を用いてテフ
ロン加工を行う場合、ミラー真空槽１２と加工用真空槽
１８は、それぞれ真空排気ポンプ１５及び真空排気ポン
プ１９によって、所定の真空度まで真空排気される。と
ころが、加工を開始してアブレーションが生じると、加
工用真空槽１８の真空度は、２〜３桁悪化する。ミラー
真空槽１２と加工用真空槽１８とは、真空ダクト１６で
連結されているため、この真空度の悪化は、平面ミラー
１３の表面の汚染につながる。そこで、本実施例では、
このような汚染を最小限に抑えるために、平面ミラー１
３からの反射ＳＲ光を通過させるための必要最小限の開
口部を有するオリフィス１７を真空ダクト内に設け、ミ
ラー真空槽１２と加工用真空槽１８との間の通気を抑制
している。When performing Teflon processing using the Teflon processing apparatus of the present embodiment, the mirror vacuum chamber 12 and the processing vacuum chamber 18 are evacuated to a predetermined degree of vacuum by the vacuum pumps 15 and 19, respectively. Is done. However, when ablation occurs after processing is started, the degree of vacuum in the processing vacuum chamber 18 is deteriorated by two to three orders of magnitude. Since the mirror vacuum chamber 12 and the processing vacuum chamber 18 are connected by the vacuum duct 16, the deterioration of the degree of vacuum leads to contamination of the surface of the flat mirror 13. Therefore, in this embodiment,
In order to minimize such contamination, the flat mirror 1
An orifice 17 having a minimum required opening for allowing the reflected SR light from 3 to pass therethrough is provided in the vacuum duct to suppress ventilation between the mirror vacuum chamber 12 and the processing vacuum chamber 18.
【００１２】なお、上記実施例では、入射ＳＲ光の光路
に平行に平面ミラーを移動させる場合について説明した
が、平面ミラーを光路に垂直（図の上下方向）に移動さ
せる用にしてもよい。ただし、この場合は、すべてのＳ
Ｒ光を反射するためには平面ミラーの長さｍを上記実施
例の２倍以上にする必要がある。In the above embodiment, the case where the plane mirror is moved in parallel with the optical path of the incident SR light has been described. However, the plane mirror may be moved vertically (in the vertical direction in the figure). However, in this case, all S
In order to reflect the R light, the length m of the plane mirror needs to be twice or more that of the above embodiment.
【００１３】また、上記実施例では、平面ミラーを用い
て、大面積加工を行う場合について説明したが、集光ミ
ラーを用いて、高速加工を行うようにすることもでき
る。Further, in the above embodiment, the case where large area processing is performed using a plane mirror has been described. However, high speed processing can be performed using a condensing mirror.
【００１４】次に本発明の第２の実施例について図２を
参照して説明する。ここで、第１の実施例と同一のもの
には同一番号を付し、その説明を省略する。Next, a second embodiment of the present invention will be described with reference to FIG. Here, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
【００１５】本実施例のテフロン加工装置は、凸面鏡２
２を有している。この凸面鏡２２は、入射したＳＲ光を
発散させて、テフロン２０に照射させる。凸面鏡２２へ
の入射ＳＲ光の入射角αは、ＳＲ光の垂直方向にｘ軸を
想定し、下端を０とすれば、ｘの関数として、α（ｘ）
＝cos -1｛（ｒ−ｘ）／ｒ｝、で表わされる。ここで、
ｒは凸面鏡の曲率半径である。The Teflon processing apparatus of the present embodiment has a convex mirror 2
Two. The convex mirror 22 diverges the incident SR light and irradiates the Teflon 20. The incident angle α of the incident SR light to the convex mirror 22 is assumed to be x-axis in the vertical direction of the SR light, and if the lower end is set to 0, α (x)
= Cos -1 {(rx) / r}. here,
r is the radius of curvature of the convex mirror.
【００１６】凸面鏡２２から距離Ｌにあるテフロン２０
の表面上での発散ＳＲ光の幅は、ｃ−ａ、で与えられ、
距離ｃは、ｃ＝Ｌtan ２α、で与えられる。Teflon 20 at a distance L from convex mirror 22
The width of the divergent SR light on the surface of is given by ca,
The distance c is given by c = Ltan 2α.
【００１７】ここで、入射ＳＲ光の垂直方向の幅ａを２
mmとし、凸面鏡２２へのＳＲ光の入射角α（２mm）を１
度（８０％程度の高反射率が得られる角度）とすると、
凸面鏡の曲率半径ｒは、１３．１ｍとなる。このとき、
凸面鏡２２の円弧（ＡＢ）の長さは２２８mmとなる。ま
た、距離Ｌを１ｍとすれば、発散ＳＲ光の幅（ｃ−ａ）
は、約３３mmとなる。したがって、本実施例のテフロン
加工装置を用いると、従来の加工装置（ＳＲ光の垂直方
向の幅が５mmの場合）に比べ、６倍以上の範囲にＳＲ光
を照射することができる。Here, the width a of the incident SR light in the vertical direction is 2
mm, and the incident angle α (2 mm) of the SR light to the convex mirror 22 is 1
Degrees (an angle at which a high reflectance of about 80% is obtained)
The radius of curvature r of the convex mirror is 13.1 m. At this time,
The length of the arc (AB) of the convex mirror 22 is 228 mm. If the distance L is 1 m, the width (ca) of the divergent SR light
Is about 33 mm. Therefore, when the Teflon processing apparatus of this embodiment is used, the SR light can be irradiated to a range that is 6 times or more as compared with the conventional processing apparatus (when the vertical width of the SR light is 5 mm).
【００１８】なお、高速加工を必要とする場合には、凸
面鏡２２の曲率半径を大きくしてＳＲ光の発散度を抑え
てやれば良い。また、より広い範囲にＳＲ光を照射した
い場合には凸面鏡２２の曲率半径を小さくしてやれば良
い。If high-speed processing is required, the radius of curvature of the convex mirror 22 may be increased to suppress the divergence of SR light. When it is desired to irradiate the SR light over a wider range, the radius of curvature of the convex mirror 22 may be reduced.
【００１９】最後に、本実施例のテフロン加工装置に使
用されるオリフィス１７を図３に示しておく。オリフィ
ス１７は、その厚みが真空ダクト１６の長さｄと等しい
場合、オリフィスの開口部の径を、真空ダクト１６の内
径（ここでは１００mm）の１／１０程度としてやれば、
ミラー真空槽１２と加工用真空槽１８との間に生じた２
桁程度の差圧を維持することができる。また、図３のよ
うに、オリフィスの開口部の形状をＳＲ光の光路形状に
合わせることにより、そのコンダクタンスをより向上さ
せることができる。Finally, FIG. 3 shows an orifice 17 used in the Teflon processing apparatus of this embodiment. When the thickness of the orifice 17 is equal to the length d of the vacuum duct 16, the diameter of the opening of the orifice is set to about 1/10 of the inner diameter of the vacuum duct 16 (here, 100 mm).
2 generated between the mirror vacuum chamber 12 and the processing vacuum chamber 18
A pressure difference of the order of magnitude can be maintained. Further, as shown in FIG. 3, the conductance can be further improved by adjusting the shape of the opening of the orifice to the shape of the optical path of the SR light.
【００２０】[0020]
【発明の効果】本発明によれば、ミラーを用いてＳＲ光
の光路を変更したり、発散させたりするようにしたこと
で、単純な構成でありながら、テフロン表面の広い範囲
に放射光を照射することができ、テフロンの大面積加工
を実現できる。According to the present invention, the optical path of the SR light is changed or diverged by using the mirror, so that the radiation light can be spread over a wide area of the Teflon surface with a simple structure. Irradiation enables large area processing of Teflon.
【図１】本発明の第１の実施例の模式図である。FIG. 1 is a schematic diagram of a first embodiment of the present invention.
【図２】本発明の第２の実施例の模式図である。FIG. 2 is a schematic diagram of a second embodiment of the present invention.
【図３】図２のテフロン加工装置に使用されるオリフィ
スの（ａ）正面図及び（ｂ）縦断面図である。3A is a front view of an orifice used in the Teflon processing apparatus of FIG. 2 and FIG.
１１ 放射光発生装置 １２ ミラー真空槽 １３ 平面ミラー １４ ミラー駆動機構 １５ 真空排気ポンプ １６ 真空ダクト １７ オリフィス １８ 加工用真空槽 １９ 真空排気ポンプ ２０ テフロン ２１ マスク ２２ 凸面鏡 REFERENCE SIGNS LIST 11 synchrotron radiation generator 12 mirror vacuum chamber 13 plane mirror 14 mirror driving mechanism 15 vacuum exhaust pump 16 vacuum duct 17 orifice 18 processing vacuum chamber 19 vacuum exhaust pump 20 teflon 21 mask 22 convex mirror
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H05H 13/04 G21K 5/02 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H05H 13/04 G21K 5/02
Claims (3)
記放射光を反射する反射鏡と、該反射鏡を真空雰囲気下
に置く反射鏡用真空槽と、該反射鏡用真空槽を真空排気
する第１の排気手段と、前記反射鏡用真空槽に真空ダク
トで連結され、被加工材及びマスクを保持する加工用真
空槽と、該加工用真空槽を真空排気する第２の真空排気
手段と、前記真空ダクト内に設けられ、前記反射鏡用真
空槽と前記加工用真空槽の間の通気を抑制するととも
に、前記放射光を通過させるオリフィスとを備え、該オ
リフィスが前記放射光の光路形状に合わせて形成された
開口部形状を有することを特徴とするテフロン加工装
置。1. A radiated light generating means for generating radiated light, a reflecting mirror for reflecting the radiated light, a reflecting mirror vacuum chamber for placing the reflecting mirror under a vacuum atmosphere, and a vacuum chamber for the reflecting mirror. A first evacuation means for evacuating, a processing vacuum tank connected to the reflecting mirror vacuum chamber by a vacuum duct to hold a workpiece and a mask, and a second vacuum evacuation for evacuating the processing vacuum chamber and means, provided in the vacuum duct, suppresses airflow between the processing vacuum chamber and the vacuum chamber for the reflector, and a orifice for passing said emitted light,該O
A orifice is formed according to the optical path shape of the emitted light
A Teflon processing apparatus having an opening shape .
射光の光路に沿って移動する移動手段に固定されている
ことを特徴とする請求項１のテフロン加工装置。2. The Teflon processing apparatus according to claim 1, wherein the reflecting mirror is a plane mirror, and is fixed to a moving unit that moves along an optical path of the radiated light.
が当該凸面鏡によって反射された前記放射光の光路形状
に合わせて、前記加工用真空槽側の開口が前記反射鏡用
真空槽側の開口よりも広くなるように形成されてること
を特徴とする請求項１のテフロン加工装置。3. The reflecting mirror is a convex mirror, and the orifice has an opening on the processing vacuum tank side more than the opening on the reflecting mirror vacuum tank side in accordance with the optical path shape of the radiated light reflected by the convex mirror. The Teflon processing apparatus according to claim 1, wherein the Teflon processing apparatus is formed so as to be wider.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7091008A JP3069832B2 (en) | 1995-04-17 | 1995-04-17 | Teflon processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7091008A JP3069832B2 (en) | 1995-04-17 | 1995-04-17 | Teflon processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08288099A JPH08288099A (en) | 1996-11-01 |
| JP3069832B2 true JP3069832B2 (en) | 2000-07-24 |
Family
ID=14014500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7091008A Expired - Fee Related JP3069832B2 (en) | 1995-04-17 | 1995-04-17 | Teflon processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3069832B2 (en) |
-
1995
- 1995-04-17 JP JP7091008A patent/JP3069832B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08288099A (en) | 1996-11-01 |
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