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JP3070176B2 - Joining method of aluminum nitride substrate and copper plate - Google Patents
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JP3070176B2 - Joining method of aluminum nitride substrate and copper plate - Google Patents

Joining method of aluminum nitride substrate and copper plate

Info

Publication number
JP3070176B2
JP3070176B2 JP3237127A JP23712791A JP3070176B2 JP 3070176 B2 JP3070176 B2 JP 3070176B2 JP 3237127 A JP3237127 A JP 3237127A JP 23712791 A JP23712791 A JP 23712791A JP 3070176 B2 JP3070176 B2 JP 3070176B2
Authority
JP
Japan
Prior art keywords
copper plate
aluminum nitride
plate
joined body
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3237127A
Other languages
Japanese (ja)
Other versions
JPH0551274A (en
Inventor
裕 竹島
政浩 斉藤
康信 米田
行雄 坂部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP3237127A priority Critical patent/JP3070176B2/en
Publication of JPH0551274A publication Critical patent/JPH0551274A/en
Application granted granted Critical
Publication of JP3070176B2 publication Critical patent/JP3070176B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • Ceramic Products (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、窒化アルミニウム基板
と銅板の接合方法に関する。本発明によって製造される
窒化アルミニウム基板と銅板の接合体は、例えばIC
(集積回路)パッケージやパワーダイオード等を実装す
るための基板として用いられるものである。
The present invention relates to a method for joining an aluminum nitride substrate and a copper plate. The joined body of the aluminum nitride substrate and the copper plate manufactured by the present invention is, for example, an IC
(Integrated circuit) This is used as a substrate for mounting a package, a power diode, and the like.

【0002】[0002]

【従来の技術】半導体デバイスの高密度化、高速化及び
高出力化に伴う発熱量の増大に対応するため、実装基板
としては放熱性に優れたものが要求されてきている。こ
のための実装基板としては、従来はアルミナ基板が用い
られていたが、最近では熱伝導率の高い窒化アルミニウ
ム(以下、AlNと記す。)基板が注目されている。し
かし、実装基板としての放熱性を良好にするためには、
AlN基板にヒートシンクとして厚さ数100μmの銅
板(以下、Cu板と記す。)を接合させる必要がある。
2. Description of the Related Art In order to cope with an increase in the amount of heat generated by high density, high speed, and high output of a semiconductor device, a mounting board having an excellent heat radiation property is required. Conventionally, an alumina substrate has been used as a mounting substrate for this purpose, but recently, an aluminum nitride (hereinafter, referred to as AlN) substrate having a high thermal conductivity has attracted attention. However, in order to improve the heat dissipation as a mounting board,
It is necessary to join a copper plate (hereinafter, referred to as a Cu plate) having a thickness of several 100 μm as a heat sink to the AlN substrate.

【0003】このため、従来にあっては、Ti(チタ
ン)等の活性金属を添加したロウ材を用いてAlN基板
とCu板を接合させている。すなわち、表面が平坦なC
u板の表面に活性金属を添加したロウ材のペーストを印
刷した後、このCu板をロウ材層を挟むようにしてAl
N基板に重ね、両面から荷重をかけた状態で真空中にお
いて熱処理を施す。この熱処理時にロウ材のペーストが
溶融し、AlN基板と活性金属が反応することにより、
ロウ材層を介してAlN基板の表面にCu板が強固に接
合する。しかして、このCu板はヒートシンクとして働
き、AlN基板の放熱性を良好にし、また配線パターン
としても使用できる。
For this reason, conventionally, an AlN substrate and a Cu plate are joined by using a brazing material to which an active metal such as Ti (titanium) is added. That is, C with a flat surface
After printing the paste of the brazing filler metal to which the active metal was added on the surface of the u-plate,
A heat treatment is performed in a vacuum with a load applied from both sides to the N substrate. At the time of this heat treatment, the paste of the brazing material melts and the AlN substrate reacts with the active metal,
The Cu plate is firmly joined to the surface of the AlN substrate via the brazing material layer. Thus, the Cu plate functions as a heat sink, improves the heat radiation of the AlN substrate, and can be used as a wiring pattern.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上記の
ような方法により接合されたAlN基板とCu板の接合
体にあっては、AlN基板とCu板の接合界面における
残留熱応力が大きかった。このため、接合強度のバラツ
キが比較的大きく、接合の信頼性に不安があった。
However, in the joined body of the AlN substrate and the Cu plate joined by the above method, the residual thermal stress at the joint interface between the AlN substrate and the Cu plate was large. For this reason, the variation in the joining strength is relatively large, and there has been a concern about the reliability of the joining.

【0005】本発明は、叙上の従来例の欠点に鑑みてな
されたものであり、その目的とするところは、接合界面
における残留応力を緩和させ、信頼性の高い接合体を製
作する方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks of the conventional example, and has as its object to reduce the residual stress at the bonding interface and to provide a method of manufacturing a highly reliable bonded body. To provide.

【0006】[0006]

【課題を解決するための手段】本発明の窒化アルミニウ
ム基板と銅板の接合方法は、窒化アルミニウム基板と銅
板を活性金属を含むロウ材を用いて接合する方法におい
て、真空中で窒化アルミニウム基板と銅板をロウ付けし
た後、この接合体を水素を含む雰囲気中で300〜75
0℃で熱処理することを特徴としている。
According to the present invention, there is provided a method for joining an aluminum nitride substrate and a copper plate using a brazing material containing an active metal. After brazing, the joined body is placed in an atmosphere containing hydrogen for 300 to 75
The heat treatment is performed at 0 ° C.

【0007】[0007]

【作用】本発明にあっては、窒化アルミニウム基板と銅
板のロウ付け後に水素を含む雰囲気中で接合体の熱処理
を行なうようにしたので、銅板あるいはロウ材中に固溶
している酸素が還元除去され、銅板あるいはロウ材の降
伏応力が低下する。このため、銅板あるいはロウ材が塑
性変形し易くなり、接合界面における熱応力の緩和が効
果的に行われる。したがって、本発明の方法によって窒
化アルミニウム基板と銅板の接合体を製作することによ
り、接合強度のバラツキが小さく、接合の信頼性の高い
基板材料(接合体)を得ることができる。
In the present invention, the heat treatment of the joined body is performed in an atmosphere containing hydrogen after brazing the aluminum nitride substrate and the copper plate, so that oxygen dissolved in the copper plate or the brazing material is reduced. As a result, the yield stress of the copper plate or brazing material decreases. For this reason, the copper plate or the brazing material is easily plastically deformed, and the thermal stress at the joining interface is effectively reduced. Therefore, by manufacturing a joined body of an aluminum nitride substrate and a copper plate by the method of the present invention, it is possible to obtain a substrate material (joined body) with small variation in joining strength and high joining reliability.

【0008】[0008]

【実施例】図1は本発明の一実施例の方法によって製造
された接合体を示す正面図である。この接合体4の製造
方法について説明する。まず、Ti:Ag:Cuの重量
比が10:65:25で残部が有機物よりなるロウ材3
のペーストを複数枚のCu板1の表面全体に印刷し、ペ
ースト印刷面がAlN基板2側を向くようにしてAlN
基板2の上下両面にCu板1を積層する。この後、この
状態で積層体の両面に荷重をかけ、10-5〜10-4Torr
の真空中において850℃で10分間熱処理を施した。
このとき、活性金属としてロウ材3のペースト中に添加
されているTiがAlN基板2と反応してTiN(窒化
チタン)層を生成し、AlN基板2とCu板1とが接合
される。なお、この際の冷却速度は1℃/分とする。
FIG. 1 is a front view showing a joined body manufactured by a method according to an embodiment of the present invention. A method for manufacturing the joined body 4 will be described. First, a brazing material 3 having a weight ratio of Ti: Ag: Cu of 10:65:25 and the balance of organic material was used.
Is printed on the entire surface of a plurality of Cu plates 1 and the paste printed surface is directed to the AlN substrate 2 side.
The Cu plate 1 is laminated on both upper and lower surfaces of the substrate 2. Thereafter, a load is applied to both sides of the laminate in this state, and 10 -5 to 10 -4 Torr is applied.
In a vacuum at 850 ° C. for 10 minutes.
At this time, Ti added to the paste of the brazing material 3 as an active metal reacts with the AlN substrate 2 to generate a TiN (titanium nitride) layer, and the AlN substrate 2 and the Cu plate 1 are joined. The cooling rate at this time is 1 ° C./min.

【0009】ついで、この接合体4を窒素80%、水素
20%の雰囲気中において300〜750℃で熱処理す
る。なお、この際の冷却速度もロウ付け時と同様、1℃
/分とする。こうして水素を含む雰囲気中で接合体4に
熱処理を施すと、Cu板1あるいはロウ材3中に固溶し
ている酸素が還元除去され、Cu板1あるいはロウ材3
の降伏応力が低下する。このため、Cu板1あるいはロ
ウ材3が塑性変形し、接合界面における熱応力が緩和さ
れる。また、金属Tiは水素と反応し、脆い水素化Ti
を生成するため、ロウ付けは水素を含む雰囲気中で行な
うことはできないが、一旦ロウ付けを終えた後は、ほと
んどのTiがAlN基板2との界面でTiNとなってい
るため、水素と反応せず、接合面が脆くなる恐れはな
い。
Next, the joined body 4 is heat-treated at 300 to 750 ° C. in an atmosphere of 80% nitrogen and 20% hydrogen. The cooling rate at this time is 1 ° C. as in the case of brazing.
/ Min. When heat treatment is performed on the joined body 4 in an atmosphere containing hydrogen in this manner, oxygen dissolved in the Cu plate 1 or the brazing material 3 is reduced and removed, and the Cu plate 1 or the brazing material 3 is removed.
Yield stress decreases. Therefore, the Cu plate 1 or the brazing material 3 is plastically deformed, and the thermal stress at the joining interface is reduced. In addition, metal Ti reacts with hydrogen, and fragile hydrogenated Ti
Since brazing cannot be performed in an atmosphere containing hydrogen, most of the Ti is TiN at the interface with the AlN substrate 2 after brazing is completed. Without this, there is no possibility that the joining surface becomes brittle.

【0010】つぎに、接合体の剥離強度を測定するた
め、本発明の実施例によるサンプルと比較例のサンプル
を作製した。まず、縦横各2mm、厚み0.3mmのC
u板の表面にTi:Ag:Cuの重量比が10:65:
25で残部が有機物よりなるロウ材のペーストを印刷
し、このペースト印刷面をAlN基板側に向けて縦横各
25.4mm、厚み0.635mmのAlN基板上に2列
10枚のCu板を並べた。そして、この状態でCu板の
上から荷重をかけ、10-5〜10-4Torrの真空中におい
て850℃で10分間熱処理し、AlN基板とCu板の
接合体を得た。
Next, in order to measure the peel strength of the joined body, a sample according to an embodiment of the present invention and a sample according to a comparative example were prepared. First of all, C of 2 mm in length and width and 0.3 mm in thickness
The weight ratio of Ti: Ag: Cu is 10:65:
At 25, a paste of a brazing filler metal made of an organic material is printed, and the paste-printed surface is directed toward the AlN substrate side, and two rows of 10 Cu plates are arranged on an AlN substrate having a length of 25.4 mm in each direction and a thickness of 0.635 mm. Was. Then, a load was applied from above the Cu plate in this state, and heat treatment was performed at 850 ° C. for 10 minutes in a vacuum of 10 −5 to 10 −4 Torr to obtain a joined body of the AlN substrate and the Cu plate.

【0011】次に、この接合体を窒素80%、水素20
%の雰囲気中において300℃で第2回目の熱処理を施
し、実施例1のサンプルを30枚製作した。
Next, this joined body is made up of 80% nitrogen and 20% hydrogen.
% Heat treatment at 300 ° C. in an atmosphere of 30% to produce 30 samples of Example 1.

【0012】同様に、第1回目の熱処理が施された接合
体を窒素80%、水素20%の雰囲気中において各々5
00℃、700℃、750℃で第2回目の熱処理を施
し、実施例2、実施例3、実施例4の各サンプルを30
枚ずつ製作した。
Similarly, the bonded body subjected to the first heat treatment is placed in an atmosphere of 80% nitrogen and 20% hydrogen in an atmosphere of 5% each.
A second heat treatment was performed at 00 ° C., 700 ° C., and 750 ° C., and each of the samples of Example 2, Example 3, and Example 4 was
Made one by one.

【0013】一方、第1回目の熱処理のみで第2回目の
熱処理を施していない接合体を比較例1として30枚製
作した。さらに、第1回目の熱処理が施された接合体を
窒素80%、水素20%の雰囲気中において200℃で
第2回目の熱処理を施し、比較例2のサンプルを30枚
製作した。
On the other hand, 30 bonded bodies were produced as Comparative Example 1 only with the first heat treatment but without the second heat treatment. Further, the joined body subjected to the first heat treatment was subjected to a second heat treatment at 200 ° C. in an atmosphere of 80% nitrogen and 20% hydrogen, and 30 samples of Comparative Example 2 were manufactured.

【0014】この後、実施例1〜4及び比較例1,2の
各接合体の接合強度を測定するため、図2に示すように
Cu板1に直径0.8mmの銅線6を半田7でロウ付け
し、その剥離強度(ピール強度)を測定した。こうして
測定された各サンプルの剥離強度の平均値、最小値及び
標準偏差を熱処理温度条件等とともに表1に示す。
Thereafter, a copper wire 6 having a diameter of 0.8 mm was soldered to the Cu plate 1 as shown in FIG. 2 to measure the bonding strength of each of the bonded bodies of Examples 1 to 4 and Comparative Examples 1 and 2. And the peel strength (peel strength) was measured. Table 1 shows the average value, the minimum value, and the standard deviation of the peel strength of each sample thus measured together with the heat treatment temperature conditions and the like.

【0015】[0015]

【表1】 [Table 1]

【0016】表1から実施例1〜4のサンプルと比較例
1,2のサンプルとを比較すると、実施例の接合体は比
較例の接合体よりも剥離強度の最小値及び平均値が大き
く、しかも剥離強度のばらつき(標準偏差)は小さくな
っている。
Comparing the samples of Examples 1 to 4 with the samples of Comparative Examples 1 and 2 from Table 1, the joined body of the embodiment has a larger minimum and average peel strength than the joined body of the comparative example. Moreover, the variation (standard deviation) in the peel strength is small.

【0017】なお、上記実施例においては真空中のロウ
付け後に水素を含む雰囲気中で熱処理を行なったが、ロ
ウ付け時の冷却中に水素を含む気体を接合体へ吹き込ん
で熱処理を行なってもよい。
In the above embodiment, the heat treatment is performed in an atmosphere containing hydrogen after brazing in a vacuum, but the heat treatment may be performed by blowing a gas containing hydrogen into the joined body during cooling during brazing. Good.

【0018】[0018]

【発明の効果】本発明によれば、銅板あるいはロウ材の
塑性変形によって接合界面における熱応力の緩和を効果
的に行うことができ、接合強度のバラツキが小さく、接
合の信頼性の高い基板材料(接合体)を製作することが
できる。
According to the present invention, it is possible to effectively reduce the thermal stress at the joining interface by plastic deformation of the copper plate or brazing material, to reduce the variation in joining strength, and to obtain a highly reliable joining material. (Joined body) can be manufactured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の方法により製作されたAl
N基板とCu板の接合体を示す正面図である。
FIG. 1 shows an Al manufactured by a method according to an embodiment of the present invention.
It is a front view which shows the joined body of N board and Cu board.

【図2】AlN基板とCu板の接合体の剥離強度の測定
方法を示す図である。
FIG. 2 is a diagram showing a method for measuring the peel strength of a joined body of an AlN substrate and a Cu plate.

【符号の説明】[Explanation of symbols]

1 Cu板 2 AlN基板 3 ロウ材 Reference Signs List 1 Cu plate 2 AlN substrate 3 Brazing material

───────────────────────────────────────────────────── フロントページの続き (72)発明者 坂部 行雄 京都府長岡京市天神二丁目26番10号 株 式会社 村田製作所内 (56)参考文献 特開 平2−46750(JP,A) 特開 平2−174145(JP,A) 特開 平2−149478(JP,A) 特開 平1−155686(JP,A) 特開 昭62−289396(JP,A) 特開 平3−114289(JP,A) (58)調査した分野(Int.Cl.7,DB名) C04B 37/02 H01L 23/15 H05K 3/38 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yukio Sakabe 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Murata Manufacturing Co., Ltd. (56) References JP-A-2-46750 (JP, A) JP-A Heihei JP-A-2-174145 (JP, A) JP-A-2-149478 (JP, A) JP-A-1-155686 (JP, A) JP-A-62-289396 (JP, A) JP-A-3-114289 (JP, A A) (58) Field surveyed (Int. Cl. 7 , DB name) C04B 37/02 H01L 23/15 H05K 3/38

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 窒化アルミニウム基板と銅板を活性金属
を含むロウ材を用いて接合する方法において、 真空中で窒化アルミニウム基板と銅板をロウ付けした
後、この接合体を水素を含む雰囲気中で300〜750
℃で熱処理することを特徴とする窒化アルミニウム基板
と銅板の接合方法。
In a method for joining an aluminum nitride substrate and a copper plate using a brazing material containing an active metal, the aluminum nitride substrate and the copper plate are brazed in a vacuum, and the joined body is placed in an atmosphere containing hydrogen. ~ 750
A method for bonding an aluminum nitride substrate and a copper plate, the method comprising heat-treating at a temperature of about 100 ° C.
JP3237127A 1991-08-22 1991-08-22 Joining method of aluminum nitride substrate and copper plate Expired - Fee Related JP3070176B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3237127A JP3070176B2 (en) 1991-08-22 1991-08-22 Joining method of aluminum nitride substrate and copper plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3237127A JP3070176B2 (en) 1991-08-22 1991-08-22 Joining method of aluminum nitride substrate and copper plate

Publications (2)

Publication Number Publication Date
JPH0551274A JPH0551274A (en) 1993-03-02
JP3070176B2 true JP3070176B2 (en) 2000-07-24

Family

ID=17010812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3237127A Expired - Fee Related JP3070176B2 (en) 1991-08-22 1991-08-22 Joining method of aluminum nitride substrate and copper plate

Country Status (1)

Country Link
JP (1) JP3070176B2 (en)

Also Published As

Publication number Publication date
JPH0551274A (en) 1993-03-02

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