JP3071449B2 - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
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- JP3071449B2 JP3071449B2 JP2204487A JP20448790A JP3071449B2 JP 3071449 B2 JP3071449 B2 JP 3071449B2 JP 2204487 A JP2204487 A JP 2204487A JP 20448790 A JP20448790 A JP 20448790A JP 3071449 B2 JP3071449 B2 JP 3071449B2
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- barium titanate
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、チタン酸バリウムBaTiO3を主成分とし、ラ
ンタン化合物、酸化亜鉛、酸化ニオブを添加して得られ
る誘電体磁器組成物に関するものである。Description: TECHNICAL FIELD The present invention relates to a dielectric porcelain composition obtained by adding barium titanate BaTiO 3 as a main component and adding a lanthanum compound, zinc oxide, and niobium oxide. is there.
誘電体磁器組成物は、積層セラミックコンデンサ等の
材料として使用される。積層セラミックコンデンサは、
対向内部電極が形成された誘電体磁器組成物の生シート
を所定容量になるように複数枚積層した後、一体的に焼
成して構成されている。The dielectric ceramic composition is used as a material for a multilayer ceramic capacitor or the like. Multilayer ceramic capacitors are
A plurality of green sheets of the dielectric porcelain composition on which the opposing internal electrodes are formed are laminated so as to have a predetermined capacity, and then integrally fired.
例えばX7R(EIA規格:温度特性が−55℃〜125℃にお
いて±15%以内)の積層セラミックコンデンサに使用さ
れる誘電体磁器組成物は、+25℃における比誘電率が25
00以上と高く、且つ一枚あたりの生シートの厚みが15μ
m以下であって、焼成温度が例えば1300℃以下であるこ
とが重要と成ってくる。即ち、25℃における比誘電率が
2500以上であって、生シートの厚みが15μm以下にする
ことにより、対向内部電極間の誘電体磁器組成物生シー
トの厚みや対向面積の極小化が可能となり、積層セラミ
ックコンデンサの小型化が達成できる。For example, a dielectric ceramic composition used for a multilayer ceramic capacitor of X7R (EIA standard: temperature characteristic is within ± 15% at −55 ° C. to 125 ° C.) has a relative dielectric constant of 25% at + 25 ° C.
00 or more, and the thickness of the raw sheet per sheet is 15μ
m or less, and it is important that the firing temperature is, for example, 1300 ° C. or less. That is, the relative dielectric constant at 25 ° C.
By setting the thickness of the raw sheet to 2,500 or more and the thickness of the raw sheet to 15 μm or less, it is possible to minimize the thickness and the facing area of the dielectric ceramic composition raw sheet between the opposed internal electrodes, and achieve miniaturization of the multilayer ceramic capacitor it can.
また、焼成温度が1300℃以下にすることより、対向内
部電極の材料の選択幅が増え、例えば高価なPd100%の
材料から安価なPd−Agの使用が可能となる。Further, by setting the firing temperature to 1300 ° C. or lower, the selection range of the material of the opposed internal electrode is increased, and for example, it is possible to use an inexpensive Pd-Ag from an expensive Pd 100% material.
尚、上述していないが、誘電体磁器組成物としての諸
特性である誘電損失tanδ(2.5%以下)、絶縁抵抗を充
分に考慮しなくてはならない。Although not described above, the dielectric loss tan δ (2.5% or less) and the insulation resistance, which are various characteristics of the dielectric ceramic composition, must be sufficiently considered.
従来、チタン酸バリウム、酸化ニオブ、酸化亜鉛を含
む誘電体磁器組成物がすでに提案されている(特開昭59
−18162号公報、特開昭59−18159号公報など)。Hitherto, a dielectric porcelain composition containing barium titanate, niobium oxide, and zinc oxide has already been proposed (Japanese Patent Application Laid-Open No.
-18162, JP-A-59-18159).
この誘電体磁器組成物によれば、比誘電率が2000〜30
00とすることができる。According to this dielectric ceramic composition, the relative dielectric constant is 2000 to 30.
00 can be set.
しかし、上述の誘電体磁器組成物は高い比誘電率が得
ることができても、誘電損失tanδが大きいため、生シ
ートを薄くすることができず、結局、積層コンデンサに
使用した場合、高い比誘電率が得られること効果が充分
に現れなかった。However, even though the above-mentioned dielectric porcelain composition can obtain a high relative dielectric constant, the dielectric loss tanδ is large, so that the raw sheet cannot be thinned. The effect of obtaining a dielectric constant was not sufficiently exhibited.
本発明は上述の問題点に鑑みて案出されたものであ
り、具体的には、X7Rにおいて、25℃における比誘電率
が高く、且つ焼成温度が比較的低く、さらには誘電損失
を優れ、一枚のグリーンシートが薄くできる誘電体磁器
組成物を提供することにある。The present invention has been devised in view of the above-described problems.Specifically, in X7R, the relative dielectric constant at 25 ° C. is high, and the firing temperature is relatively low, and further, the dielectric loss is excellent, An object of the present invention is to provide a dielectric ceramic composition in which one green sheet can be made thin.
上述の目的を達成するために行った具体的な手段は、
チタン酸バリウム、ランタン化合物、酸化亜鉛、酸化ニ
オブを含み、チタン酸バリウム100重量部に対して、ラ
ンタン化合物がLa2O3換算で0.2〜1.0重量%、酸化亜鉛
(ZnO)が0.3〜1.2重量%、酸化ニオブ(Nb2O5)が1.0
〜2.5重量%含有して成る誘電体磁器組成物である。Specific measures taken to achieve the above objectives are:
Barium titanate, lanthanum compounds, zinc oxide comprises niobium oxide, relative to 100 parts by weight of barium titanate, 0.2 to 1.0 wt% lanthanum compound in La 2 O 3 in terms of zinc oxide (ZnO) is 0.3 to 1.2 weight %, Niobium oxide (Nb 2 O 5 ) is 1.0
This is a dielectric porcelain composition containing about 2.5% by weight.
以上のように本発明によれば、チタン酸バリウム、ラ
ンタン化合物、酸化亜鉛、酸化ニオブを含み、チタン酸
バリウム100重量部に対して、ランタン化合物がLa2O3換
算で0.2〜1.0重量%、酸化亜鉛(ZnO)が0.3〜1.2重量
%、酸化ニオブ(Nb2O5)が1.0〜2.5重量%含有して成
る誘電体磁器組成物に設定される。これにより、25℃に
おける比誘電率εが2500以上となり、焼成温度が比較的
低く、さらには誘電損失が優れ、小型・大容量の積層セ
ラミックコンデンサが可能となる。As described above, according to the present invention, barium titanate, a lanthanum compound, zinc oxide, niobium oxide is contained, and based on 100 parts by weight of barium titanate, the lanthanum compound is 0.2 to 1.0% by weight in terms of La 2 O 3 , is 0.3-1.2% by weight of zinc oxide (ZnO), niobium oxide (Nb 2 O 5) is set in the dielectric ceramic composition comprising 1.0 to 2.5 wt%. As a result, the relative dielectric constant ε at 25 ° C. becomes 2500 or more, the firing temperature is relatively low, the dielectric loss is excellent, and a small-sized and large-capacity multilayer ceramic capacitor can be obtained.
ランタン化合物がLa2O3換算が0.2未満では、比誘電率
2000以下と大きく低下してしまい。また1.0重量%を越
えると、誘電損失tanδが3.0%を越え、温度特性が大き
くなる。If the lanthanum compound is less than 0.2 in La 2 O 3 conversion, the relative dielectric constant
It has dropped significantly to 2000 or less. If it exceeds 1.0% by weight, the dielectric loss tan δ exceeds 3.0%, and the temperature characteristics become large.
また、酸化亜鉛(ZnO)が0.3未満では、比誘電率2300
以下になり、絶縁抵抗が大きく低下してしまう。また1.
2重量%を越えると、絶縁抵抗が低下し、温度特性が大
きく劣化する。If the zinc oxide (ZnO) is less than 0.3, the relative dielectric constant is 2300
Below, the insulation resistance is greatly reduced. Also 1.
If it exceeds 2% by weight, the insulation resistance is reduced and the temperature characteristics are greatly deteriorated.
さらに、酸化ニオブ(Nb2O5)が1.0未満では、誘電損
失tanδが大きく悪化し、さらに温度特性が劣化する。
また2.5重量%を越えると、比誘電率が低下する。Further, when the niobium oxide (Nb 2 O 5 ) is less than 1.0, the dielectric loss tan δ is greatly deteriorated, and the temperature characteristics are further deteriorated.
If it exceeds 2.5% by weight, the relative dielectric constant decreases.
尚、チタン酸バリウムの生成方法において、固相法及
び蓚酸法では満足できる誘電損失tanδがえられない。In the method of producing barium titanate, a satisfactory dielectric loss tan δ cannot be obtained by the solid phase method or the oxalic acid method.
これらの相互作用により、温度特性が−55℃〜125℃
の範囲において、±15%以内で、+25℃における比誘電
率が2500以上となり、グリーンシートの厚みを15μmで
あっても、誘電損失tanδが2.5%以下と低い値を示すこ
とができる。このため、小型で大容量の積層コンデンサ
ーが達成できる。Due to these interactions, the temperature characteristic is -55 ° C to 125 ° C
Within ± 15%, the relative dielectric constant at + 25 ° C. is 2500 or more within ± 15%, and the dielectric loss tan δ can be as low as 2.5% or less even when the thickness of the green sheet is 15 μm. For this reason, a small-sized and large-capacity multilayer capacitor can be achieved.
また、また焼成温度が1300℃以下と工業的にも製造し
やすく、且つ対向内部電極に安価な銀−パラジウム(Ag
−Pd:Ag/Pd=20/80〜40/60)が使用できる積層セラミッ
クコンデンサなどに使用できる誘電体磁器組成物が達成
される。In addition, the sintering temperature is 1300 ° C or less, and it is easy to manufacture industrially, and inexpensive silver-palladium (Ag
-Pd: Ag / Pd = 20/80 to 40/60) is achieved, and a dielectric ceramic composition which can be used for a multilayer ceramic capacitor or the like is achieved.
さらに誘電体磁器組成物として基本的な特性である誘
電損失tanδが2.5%以下、絶縁抵抗(IR)が1×104MΩ
以上と充分に満足できる誘電体磁器組成物が達成され
る。Furthermore, the dielectric loss tan δ, which is a basic characteristic of a dielectric ceramic composition, is 2.5% or less, and the insulation resistance (IR) is 1 × 10 4 MΩ.
Thus, a dielectric ceramic composition sufficiently satisfactory is achieved.
以下、本発明の実施例を詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail.
水熱合成法により生成されたチタン酸バリウムを主成
分として、このチタン酸バリウム100重量部に対して、
ランタン化合物としてLa2O3、酸化亜鉛(ZnO)、酸化ニ
オブ(Nb2O5)の各粉末を表1に示すように秤量し、ボ
ールミルにて20時間湿式粉砕した後、有機系粘結剤を添
加し、しかる後攪拌、ドクターブレード法で厚さ15μm
のテープ状に成型した。このテープを130mm×100mmに裁
断し、10枚重ね、80℃でホットプレスで積層体を作成す
る。Based on barium titanate produced by hydrothermal synthesis as a main component, with respect to 100 parts by weight of this barium titanate,
La 2 O 3 , zinc oxide (ZnO), and niobium oxide (Nb 2 O 5 ) powders were weighed as shown in Table 1 as a lanthanum compound, wet-ground with a ball mill for 20 hours, and then an organic binder. Is added, and then stirred, the thickness is 15 μm by a doctor blade method.
Into a tape shape. This tape is cut into 130 mm x 100 mm, 10 sheets are stacked, and a laminate is prepared by hot pressing at 80 ° C.
尚、内部電極として、Ag系ペースト(Ag/Pd=30/70)
を印刷した。Ag-based paste (Ag / Pd = 30/70) as internal electrode
Was printed.
この積層体を2.0mm×1.25mmに裁断し、空気中にて125
0〜1300℃で2時間焼成した。さらに両端面に銀ペース
トによる電極を800℃、10分間焼きつけて、測定用試料
とした。This laminate was cut into 2.0 mm x 1.25 mm, and 125
It was baked at 0-1300 ° C. for 2 hours. Further, electrodes of silver paste were baked on both end surfaces at 800 ° C. for 10 minutes to obtain measurement samples.
このように形成された試料について、静電容量容量及
び誘電損失tanδを基準温度25℃、周波数1.0kHz、測定
電圧1.0Vrmsで測定した。また、容量の温度変化率は、
−55℃〜+125℃の範囲で測定し、+25℃における容量
を基準とした。さらに絶縁抵抗は、直流電圧25Vを1分
間印加した時を測定した。比誘電率は静電容量容量から
逆算した。For the sample thus formed, the capacitance and the dielectric loss tan δ were measured at a reference temperature of 25 ° C., a frequency of 1.0 kHz, and a measurement voltage of 1.0 Vrms. The temperature change rate of the capacitance is
It was measured in the range of -55 ° C to + 125 ° C, and the capacity at + 25 ° C was used as a reference. Further, the insulation resistance was measured when a DC voltage of 25 V was applied for 1 minute. The relative permittivity was calculated backward from the capacitance.
その結果を表1に示す。試料番号に*印を付したもの
は本発明の範囲外である。Table 1 shows the results. Samples marked with * are out of the scope of the present invention.
そして本発明の範囲の評価として、比誘電率εは2500
以上を良品とした。即ち、比誘電率εが2500未満では、
充分な比誘電率が得れず、これにより積層セラミックコ
ンデンサの小型化が困難となってしまう。And as an evaluation of the scope of the present invention, the relative dielectric constant ε is 2500
The above was regarded as non-defective. That is, when the relative dielectric constant ε is less than 2500,
A sufficient relative permittivity cannot be obtained, which makes it difficult to reduce the size of the multilayer ceramic capacitor.
また、誘電損失tanδは2.5%以下を良品とした。即
ち、誘電損失tanδが2.5%を越えると、積層セラミック
コンデンサにおいて、誘電損失tanδ不良となり、誘電
体層の薄膜化が困難となる。A dielectric loss tan δ of 2.5% or less was regarded as a good product. That is, if the dielectric loss tan δ exceeds 2.5%, the dielectric loss tan δ becomes defective in the multilayer ceramic capacitor, and it becomes difficult to reduce the thickness of the dielectric layer.
さらに、温度特性は、X7Rに対応するように、−55℃
〜+125℃の温度範囲で±15%以内の容量の温度変化率
を良品とした。Furthermore, the temperature characteristic is -55 ° C to correspond to X7R.
A non-defective product was determined to have a temperature change rate of a capacity within ± 15% within a temperature range of up to + 125 ° C.
さらに、絶縁抵抗(IR)は104MΩ以上を良品とした。Further, the insulation resistance (IR) of 10 4 MΩ or more was regarded as a good product.
試料番号1〜9は誘電体磁器組成物の主成分となるチ
タン酸バリウムBaTiO3に添加するランタン化合物である
La2O3の組成量を検討した。即ち、La2O3の添加量を0.1
〜1.1重量%まで値を夫々変化させた。 Sample Nos. 1 to 9 are lanthanum compounds added to barium titanate BaTiO 3 which is a main component of the dielectric ceramic composition.
The composition of La 2 O 3 was studied. That is, the added amount of La 2 O 3 is 0.1
The values were each varied to 1.1% by weight.
このとき酸化亜鉛(ZnO)及び酸化ニオブ(Nb2O5)の
添加量を0.6重量%及び1.6重量%にした。At this time, the addition amounts of zinc oxide (ZnO) and niobium oxide (Nb 2 O 5 ) were set to 0.6% by weight and 1.6% by weight.
試料番号1(La2O3の添加量:0.1重量%)では、比誘
電率εが1950と低く、また誘電損失tanδが2.8%となっ
てしまう。さらに、温度特性が+21%と悪化してしま
う。In sample No. 1 (the amount of La 2 O 3 added: 0.1% by weight), the relative dielectric constant ε was as low as 1950, and the dielectric loss tan δ was 2.8%. Further, the temperature characteristic is deteriorated to + 21%.
また、試料番号2〜8(La2O3の添加量:0.2〜1.0重量
%)では、比誘電率εが2900〜3300となり、誘電損失ta
nδが2.43%以下、温度特性が±14%以内になる。また
絶縁抵抗も良品の範囲となる。即ち、比誘電率εが高
く、温度特性に優れ、誘電損失tanδが小さい組成物が
達成される。In sample numbers 2 to 8 (addition amount of La 2 O 3 : 0.2 to 1.0% by weight), the relative dielectric constant ε was 2900 to 3300, and the dielectric loss ta
nδ is 2.43% or less and temperature characteristics are within ± 14%. The insulation resistance is also in the range of good products. That is, a composition having a high relative dielectric constant ε, excellent temperature characteristics, and a small dielectric loss tan δ is achieved.
さらに、試料番号9(La2O3の添加量:1.1重量%)で
は、比誘電率εが3600と良品の範囲となるものの、誘電
損失tanδが3.05%、温度特性が−20%と悪化してしま
う。Further, in sample No. 9 (the amount of La 2 O 3 added: 1.1% by weight), the relative dielectric constant ε was 3600, which is a good range, but the dielectric loss tan δ was 3.05%, and the temperature characteristics were deteriorated to −20%. Would.
従って、本発明においてはチタン酸バリウムBaTiO3に
添加するLa2O3の重量は、チタン酸バリウムBaTiO3100重
量部に対して、0.2〜1.0重量%の範囲とした。Therefore, in the present invention, the weight of La 2 O 3 added to barium titanate BaTiO 3 is in the range of 0.2 to 1.0% by weight based on 100 parts by weight of barium titanate BaTiO 3 .
試料番号10〜16は誘電体磁器組成物の主成分となるチ
タン酸バリウムBaTiO3に添加する酸化亜鉛(ZnO)の組
成量を検討した。即ち、ZnOの添加量を0.2〜1.3重量%
まで値を夫々変化させた。Sample Nos. 10 to 16 investigated the composition amount of zinc oxide (ZnO) added to barium titanate BaTiO 3 which is a main component of the dielectric ceramic composition. That is, the added amount of ZnO is 0.2 to 1.3% by weight.
The values were changed up to each.
このとき、ランタン化合物であるLa2O3及び酸化ニオ
ブ(Nb2O5)の添加量を0.6重量%及び1.6〜2.1重量%に
した。At this time, the added amounts of the lanthanum compound La 2 O 3 and niobium oxide (Nb 2 O 5 ) were set to 0.6% by weight and 1.6 to 2.1% by weight.
試料番号10(ZnOの添加量:0.2重量%)では、比誘電
率εが2300と低く、また誘電損失tanδ及び絶縁抵抗も
良好が結果が得られない。In sample No. 10 (the amount of ZnO added: 0.2% by weight), the relative dielectric constant ε was as low as 2300, and the dielectric loss tan δ and the insulation resistance were good, but no result was obtained.
また、試料番号11〜15(ZnOの添加量:0.3〜1.2重量
%)では、比誘電率εが2500〜3300となり、温度特性が
±14%以内となり、誘電損失tanδが2.39%以下、絶縁
抵抗が1×104MΩ以上となる。In sample numbers 11 to 15 (the amount of ZnO added: 0.3 to 1.2% by weight), the relative dielectric constant ε is 2500 to 3300, the temperature characteristics are within ± 14%, the dielectric loss tan δ is 2.39% or less, and the insulation resistance is Is 1 × 10 4 MΩ or more.
即ち、比誘電率εが高い値で、良好な温度特性が得ら
れ、且つ低温焼成が可能な組成物が達成される。That is, a composition having a high relative dielectric constant ε, good temperature characteristics, and low-temperature firing is achieved.
さらに、試料番号16(ZnOの添加量:1.3重量%)で
は、比誘電率εが6000と極めて高いものの、温度特性、
絶縁抵抗が大きく悪化してしまう。Further, in Sample No. 16 (the amount of ZnO added: 1.3% by weight), although the relative dielectric constant ε was extremely high at 6000, the temperature characteristics,
The insulation resistance is greatly deteriorated.
従って、本発明においてはチタン酸バリウムBaTiO3に
添加するZnOの重量は、チタン酸バリウムBaTiO3100重量
部に対して、0.3〜1.2重量%の範囲とした。Therefore, in the present invention, the weight of ZnO added to barium titanate BaTiO 3 is in the range of 0.3 to 1.2% by weight based on 100 parts by weight of barium titanate BaTiO 3 .
つぎに、試料番号17〜25は誘電体磁器組成物の主成分
となるチタン酸バリウムBaTiO3に添加する酸化ニオブ
(Nb2O5)の量について検討した。即ち、Nb2O5の添加量
を0.9〜2.6重量%まで値を夫々変化させた。Next, Sample Nos. 17 to 25 examined the amount of niobium oxide (Nb 2 O 5 ) added to barium titanate BaTiO 3 which is a main component of the dielectric ceramic composition. That is, the value of the additive amount of Nb 2 O 5 up to 0.9 to 2.6 wt% respectively varied.
このとき、ランタン化合物であるLa2O3及び酸化亜鉛
(ZnO)の添加量を0.6重量%及び0.3〜1.1重量%にし
た。At this time, the addition amounts of the lanthanum compound La 2 O 3 and zinc oxide (ZnO) were set to 0.6% by weight and 0.3 to 1.1% by weight.
試料番号17(Nb2O5の添加量が0.9重量%)では、比誘
電率εが3900となるものの、温度特性が−22%となり、
誘電損失tanδが3.5%と極めて大きいものとなる。これ
により、誘電体層の薄膜化が困難となる。In sample No. 17 (the amount of Nb 2 O 5 added was 0.9% by weight), the relative dielectric constant ε was 3900, but the temperature characteristic was −22%.
The dielectric loss tan δ is as large as 3.5%. This makes it difficult to reduce the thickness of the dielectric layer.
また、試料番号18〜24(Nb2O5の添加量:1.0〜2.5重量
%)では、比誘電率εが2500〜3500となり、また温度特
性が−14%〜+12%となる。さらに誘電損失tanδが2.3
9%以下となる。In sample numbers 18 to 24 (addition amount of Nb 2 O 5 : 1.0 to 2.5% by weight), the relative dielectric constant ε is 2500 to 3500, and the temperature characteristic is -14% to + 12%. Furthermore, the dielectric loss tanδ is 2.3
9% or less.
さらに、試料番号25(Nb2O5の添加量:2.6重量%)で
は、誘電損失tanδが1.78%となるものの、比誘電率ε
が2200と低下してしまう。Further, in Sample No. 25 (the amount of Nb 2 O 5 added: 2.6% by weight), the dielectric loss tan δ was 1.78%, but the relative dielectric constant ε was ε.
Decreases to 2200.
従って、本発明においてはチタン酸バリウムBaTiO3に
添加するNb2O5の重量は、チタン酸バリウムBaTiO3100重
量部に対して、1.0〜2.5重量%の範囲とした。Therefore, in the present invention, the weight of Nb 2 O 5 added to barium titanate BaTiO 3 is in the range of 1.0 to 2.5% by weight based on 100 parts by weight of barium titanate BaTiO 3 .
最後に、添加するLa2O3、ZnO及びNb2O5の添加量が全
て範囲に満たない、すなわち0.2、0.2、及び0.9重量%
の場合(試料番号26)、焼結が不可能な誘電体磁器組成
物となってしまう。Finally, the amounts of La 2 O 3 , ZnO and Nb 2 O 5 added are all less than the range, ie 0.2, 0.2 and 0.9% by weight.
In the case of (Sample No. 26), the dielectric ceramic composition cannot be sintered.
逆に添加するLa2O3、ZnO及びNb2O5の添加量が全て範
囲を越える、即ち1.1、1.3及び2.6重量%の場合(試料
番号27)、比誘電率εが1900となり、また誘電損失tan
δが2.61%となってしまう。Conversely, when the added amounts of La 2 O 3 , ZnO and Nb 2 O 5 all exceed the range, that is, 1.1, 1.3 and 2.6% by weight (Sample No. 27), the relative dielectric constant ε becomes 1900 and Loss tan
δ becomes 2.61%.
以上のように、水熱合成法により生成されたチタン酸
バリウム、ランタン化合物、酸化亜鉛、酸化ニオブを含
み、チタン酸バリウム100重量部に対して、ランタン化
合物がLa2O3換算で0.2〜1.0重量%、酸化亜鉛(ZnO)が
0.3〜1.2重量%、酸化ニオブ(Nb2O5)が1.0〜2.5重量
%含有して成る誘電体磁器組成物によれば、−55℃〜12
5℃における容量の温度変化率が±15%以内となり、X7R
特性を充分に満足し、さらに、25℃における比誘電率ε
が2500以上となり、焼成温度が1250〜1300℃と比較的低
く、さらには誘電損失tanδが2.5%以下となり、誘電体
磁器のグリーンシートを15μm以下と薄くすることがで
きる。このため、温度特性に優れ、小型・大容量の積層
セラミックコンデンサが可能となる。さらに、焼成温度
が1250〜1300℃と比較的低くなるため、内部電極材料と
して、高価なバラジウム100%からAgを20〜40%含有し
た安価な内部電極材料が使用でき、これにより、安価な
積層コンデンサーが達成できる。As described above, barium titanate produced by hydrothermal synthesis, lanthanum compounds, zinc oxide comprises niobium oxide, relative to 100 parts by weight of barium titanate, lanthanum compound in La 2 O 3 in terms of 0.2 to 1.0 Weight percent, zinc oxide (ZnO)
According to the dielectric porcelain composition containing 0.3 to 1.2% by weight and 1.0 to 2.5% by weight of niobium oxide (Nb 2 O 5 ), -55 ° C. to 12 ° C.
The temperature change rate of the capacity at 5 ° C is within ± 15%, and the X7R
Fully satisfies the characteristics, and the relative dielectric constant ε at 25 ° C.
Is 2500 or more, the firing temperature is relatively low at 1250 to 1300 ° C., the dielectric loss tan δ is 2.5% or less, and the green sheet of the dielectric ceramic can be made as thin as 15 μm or less. Therefore, a small-sized and large-capacity multilayer ceramic capacitor having excellent temperature characteristics can be realized. Further, since the firing temperature is relatively low at 1250 to 1300 ° C., an inexpensive internal electrode material containing 100 to 40% of expensive palladium to 20 to 40% of Ag can be used as an internal electrode material. A condenser can be achieved.
尚、チタン酸バリウムの生成方法は、水熱合成法の他
に、固相法、蓚酸法などがあるが、水熱合成法に比較し
て、誘電損失tanδのみについて、若干不安定な値(2.8
5%前後)となる。安定したチタン酸バリウムを得るに
は、水熱合成法によって生成したチタン酸バリウムを用
いることが望ましい。In addition to the hydrothermal synthesis method, there are a solid phase method, an oxalic acid method, and the like as a method for producing barium titanate. 2.8
About 5%). To obtain stable barium titanate, it is desirable to use barium titanate produced by a hydrothermal synthesis method.
以上のように、本発明によれば、チタン酸バリウム、
ランタン化合物、酸化亜鉛、酸化ニオブを含み、チタン
酸バリウム100重量部に対して、ランタン化合物がLa2O3
換算で0.2〜1.0重量%、酸化亜鉛(ZnO)が0.3〜1.2重
量%、酸化ニオブ(Nb2O5)が1.0〜2.5重量%含有して
成るため、X7R特性を満足し、比誘電率εが2500以上
で、且つ焼成温度が1300℃以下となる。またその他の諸
特性として、誘電損失tanδが2.5%以下、絶縁抵抗(I
R)が1×104MΩ以上の誘電体磁器組成物を得ることが
できる。As described above, according to the present invention, barium titanate,
Contains lanthanum compound, zinc oxide, niobium oxide, and 100 parts by weight of barium titanate, the lanthanum compound is La 2 O 3
0.2-1.0 wt% in terms of 0.3 to 1.2 wt% of zinc oxide (ZnO) is, for niobium oxide (Nb 2 O 5) is comprising 1.0 to 2.5 wt%, satisfying the X7R characteristic, the dielectric constant ε Is 2500 or more, and the firing temperature is 1300 ° C. or less. As other characteristics, dielectric loss tanδ is 2.5% or less, insulation resistance (I
R) is 1 × 10 4 MΩ or more.
これにより、例えば積層セラミックコンデンサを上述
の誘電体磁器組成物で構成した場合、温度特性に優れた
小型・大容量のコンデンサが達成でき、焼成温度1300℃
以下となり、積層されたシート間に内部電極として安価
な銀−パラジウムを使用することも可能で、安価な積層
セラミックコンデンサの誘電体磁器組成物となる。Thus, for example, when a multilayer ceramic capacitor is formed of the above-described dielectric ceramic composition, a small-sized and large-capacity capacitor having excellent temperature characteristics can be achieved, and a firing temperature of 1300 ° C.
In the following, it is possible to use inexpensive silver-palladium as an internal electrode between the laminated sheets, and it becomes an inexpensive dielectric ceramic composition of a laminated ceramic capacitor.
Claims (1)
亜鉛、酸化ニオブを含み、チタン酸バリウム100重量部
に対して、 ランタン化合物がLa2O3換算で0.2〜1.0重量%、 酸化亜鉛(ZnO)が0.3〜1.2重量%、 酸化ニオブ(Nb2O5)が1.0〜2.5重量%含有して成る誘
電体磁器組成物。1. A barium titanate, a lanthanum compound, zinc oxide and niobium oxide, wherein a lanthanum compound is 0.2 to 1.0% by weight in terms of La 2 O 3 with respect to 100 parts by weight of barium titanate, and zinc oxide (ZnO) There 0.3-1.2 wt%, niobium oxide (Nb 2 O 5) dielectric ceramic composition comprising 1.0 to 2.5 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2204487A JP3071449B2 (en) | 1990-07-31 | 1990-07-31 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2204487A JP3071449B2 (en) | 1990-07-31 | 1990-07-31 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0489353A JPH0489353A (en) | 1992-03-23 |
| JP3071449B2 true JP3071449B2 (en) | 2000-07-31 |
Family
ID=16491342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2204487A Expired - Fee Related JP3071449B2 (en) | 1990-07-31 | 1990-07-31 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3071449B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100495210B1 (en) * | 2002-07-05 | 2005-06-14 | 삼성전기주식회사 | Non-reducible, low temperature sinterable dielectric ceramic composition, multilayer ceramic chip capacitor using the composition and method for preparing the multilayer ceramic chip capacitor |
| CN102136536A (en) * | 2010-01-25 | 2011-07-27 | 亚威朗(美国) | Strain balanced light emitting device |
-
1990
- 1990-07-31 JP JP2204487A patent/JP3071449B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0489353A (en) | 1992-03-23 |
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