JP3074712B2 - Method for producing silver single crystal thin film and metal artificial lattice - Google Patents
Method for producing silver single crystal thin film and metal artificial latticeInfo
- Publication number
- JP3074712B2 JP3074712B2 JP02232086A JP23208690A JP3074712B2 JP 3074712 B2 JP3074712 B2 JP 3074712B2 JP 02232086 A JP02232086 A JP 02232086A JP 23208690 A JP23208690 A JP 23208690A JP 3074712 B2 JP3074712 B2 JP 3074712B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silver
- thin film
- substrate
- crystal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 34
- 229910052709 silver Inorganic materials 0.000 title claims description 33
- 239000004332 silver Substances 0.000 title claims description 32
- 239000010409 thin film Substances 0.000 title claims description 25
- 239000013078 crystal Substances 0.000 title claims description 23
- 229910052751 metal Inorganic materials 0.000 title claims description 12
- 239000002184 metal Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 38
- 239000010408 film Substances 0.000 claims description 16
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000000635 electron micrograph Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000000004 low energy electron diffraction Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、組成変調構造を有する金属人工格子のバッ
ファー層の製造方法に関するものである。Description: TECHNICAL FIELD The present invention relates to a method for producing a buffer layer of a metal artificial lattice having a composition modulation structure.
（従来の技術） 銀薄膜のエピタキシャル成長はその表面構造や成長条
件への学術的興味、あるいはその低い電気抵抗から注目
され研究されている。例えば、Si（111）基板上にAg（1
11）を電子ビーム蒸着法により作製し、反射高速電子線
回折（RHEED）によりその結晶性を評価した例（ジャパ
ニーズジャーナルオブアプライドフィジックス（J.J.A.
P.）第17巻、第22号2097頁）や、フッ酸洗浄したSi（10
0）基板上にAg（100）を基板温度室温で蒸着法により作
製し、低速電子線回折（LEED）によりその結晶性を評価
した例（ジャパニーズジャーナルオブアプライドフィジ
ックス（J.J.A.P.）第16巻、第３号519頁）、あるいは
劈開したマイカ上に基板温度550KでAg（111）を蒸着法
により作製した例（シンソリッドフィルムズ（Thin Sol
id Films）第81巻、L93頁）などがある。(Prior Art) Epitaxial growth of silver thin films has been attracting attention and studied because of its academic interest in its surface structure and growth conditions or its low electrical resistance. For example, Ag (1) on Si (111) substrate
Example 11) was fabricated by electron beam evaporation and its crystallinity was evaluated by reflection high-energy electron diffraction (RHEED) (Japanese Journal of Applied Physics (JJA)
P.) Vol. 17, No. 22, p. 2097) or Si (10
0) An example in which Ag (100) was formed on a substrate by a vapor deposition method at a substrate temperature of room temperature and its crystallinity was evaluated by low-energy electron diffraction (LEED) (Japanese Journal of Applied Physics (JJAP) Vol. 16, No. 3) No. 519) or an example in which Ag (111) was formed on cleaved mica at a substrate temperature of 550 K by vapor deposition (Thin Solid Films (Thin Sol
id Films), Vol. 81, page L93).
（発明が解決しようとする課題） 金属人工格子に於てその特殊な性質、例えば垂直磁気
異方性等の効果を高めるためには人工格子の結晶性を高
めることが必要となる場合が多い。しかし、基板上に金
属人工格子を結晶性よく成長させることは必ずしも容易
ではない。その場合には基板と金属人工格子の間に表面
平坦性のよい単結晶のバッファー層を設けるのが有効で
ある。(Problems to be Solved by the Invention) It is often necessary to increase the crystallinity of an artificial lattice in order to enhance the special properties of the metal artificial lattice, for example, effects such as perpendicular magnetic anisotropy. However, it is not always easy to grow a metal artificial lattice with good crystallinity on a substrate. In that case, it is effective to provide a single crystal buffer layer having good surface flatness between the substrate and the metal artificial lattice.
本発明の目的は金属人工格子と基板との間に表面平坦
性のよい銀の単結晶薄膜のバッファー層を提供すること
にある。An object of the present invention is to provide a buffer layer of a silver single crystal thin film having good surface flatness between a metal artificial lattice and a substrate.
（課題を解決するための手段） 本発明は、（１）基板温度が50℃以上250℃以下で酸
化マグネシウム（100）基板上、ないしシリコン（100）
基板上にイオンビームスパッタ法により形成することを
特徴とする銀（100）単結晶薄膜の製造方法、（２）基
板温度が50℃以上250℃以下でシリコン（111）基板上に
イオンビームスパッタ法により形成することを特徴とす
る銀（111）単結晶薄膜の製造方法、および（３）前記
方法により作製した銀（100）ないし銀（111）単結晶銀
膜の上に２種類の金属を交互に形成することを特徴とす
る金属人工格子の製造方法である。(Means for Solving the Problems) The present invention relates to (1) a method in which a substrate temperature is 50 ° C. or more and 250 ° C. or less and a magnesium oxide (100) substrate or silicon (100)
A method for producing a silver (100) single crystal thin film, which is formed on a substrate by an ion beam sputtering method; (2) an ion beam sputtering method on a silicon (111) substrate at a substrate temperature of 50 ° C. to 250 ° C. And (3) alternately depositing two kinds of metals on the silver (100) or silver (111) single crystal silver film produced by the above method. A method for producing a metal artificial lattice, characterized in that the metal artificial lattice is formed.
（実施例） 以下本発明について実施例により説明する。第１図お
よび第２図は、本発明の銀単結晶薄膜の模式図である。
Si（100）、あるいはMgO基板１上にAg（100）単結晶膜
２が、Si（111）基板１上にAg（111）が積層されてい
る。本発明に当たっては第３図に示したイオンビームス
パッタ装置を用いた。真空チャンバー10はカウフマン型
イオン源11を装備し、Agターゲット５をスパッタする。
スパッタされた粒子５′は天板６で発散視野が制限さ
れ、更に真空チャンバー外部から駆動されるシャッター
７及び水晶振動子膜原計８により膜厚をモニターしなか
らシャッターの開閉により、Ag薄膜が形成される。９は
ヒーター、12は真空ポンプ、13はゲートバルブ、14は基
板ホルダーである。この時、チャンバー内の真空度は１
×10-4torr、基板面内の膜厚分布を避けるために基板に
60rppmの回転を与えている。イオン源４の出力を600V、
20mAとした時にAg成膜速度は0.2A/secであった。(Examples) Hereinafter, the present invention will be described with reference to examples. 1 and 2 are schematic views of a silver single crystal thin film of the present invention.
An Ag (100) single crystal film 2 is laminated on a Si (100) or MgO substrate 1 and Ag (111) is laminated on a Si (111) substrate 1. In the present invention, the ion beam sputtering apparatus shown in FIG. 3 was used. The vacuum chamber 10 is equipped with a Kauffman-type ion source 11 and sputters the Ag target 5.
The sputtered particles 5 'have a divergent field of view limited by the top plate 6, and furthermore, the film thickness is monitored by the shutter 7 and the quartz crystal film master 8 driven from the outside of the vacuum chamber. Is formed. 9 is a heater, 12 is a vacuum pump, 13 is a gate valve, and 14 is a substrate holder. At this time, the degree of vacuum in the chamber is 1
× 10 -4 torr, to avoid film thickness distribution in the substrate plane
Giving a rotation of 60 rppm. 600V output of ion source 4
At 20 mA, the Ag film formation rate was 0.2 A / sec.
以上の条件で、まず基板としてMgO（100）を用い、基
板温度を−50℃から600℃の条件で1500Aの厚さの銀薄膜
を作製し、Ｘ線回折および反射高速電子線回折（RHEE
D）により、それぞれの膜の結晶性を調べた。基板温度1
50℃のときのＸ線回折の結果を第４図、電子顕微鏡写真
を第６図（ａ）、（ｂ）に示す。第６図のRHEEDの２つ
のパターンは互いに45度離れており、４回対称のパター
ンで、第６図（ａ）は〈110〉、第６図（ｂ）は〈100〉
から見たものである。鋭いAg（200）ピークが観測され
たＸ線回折の結果とあわせて考えると、銀の（100）単
結晶薄膜ができているのがわかる。〈110〉からみたス
トリーク間の幅から銀の（110）の格子面間隔は2.88A、
〈100〉からみたストリーク間の幅から銀の（100）の格
子面間隔は4.08Aである。この膜は、第６図のパターン
がストリークから成り、しかも表面は鏡面であることか
ら平坦性の良いこともわかった。平坦性の良い鏡面の銀
の（100）単結晶薄膜は基板温度50℃〜250℃の間でのみ
得られた。一方、基板温度が50℃より低いときには銀薄
膜は多結晶であった。また、250℃より高い温度で作製
した試料は（100）単結晶薄膜だが、試料表面が白濁し
表面の平坦性が悪かった。また、同様の結果がフッ酸洗
浄をおこなったSi（100）基板を用いた場合にも得られ
た。なおフッ酸洗浄をおこなわずにSi（100）基板上に
銀薄膜を作製すると表面の一部が白濁し平坦性が悪くな
る場合があった。Under the above conditions, first, using MgO (100) as a substrate, a silver thin film having a thickness of 1500 A was prepared at a substrate temperature of −50 ° C. to 600 ° C., and X-ray diffraction and reflection high-speed electron diffraction (RHEE)
By D), the crystallinity of each film was examined. Substrate temperature 1
FIG. 4 shows the results of X-ray diffraction at 50 ° C., and FIGS. 6 (a) and 6 (b) show electron micrographs. The two RHEED patterns in FIG. 6 are 45 degrees apart from each other and are four-fold symmetrical patterns. FIG. 6 (a) is <110>, and FIG. 6 (b) is <100>.
It is seen from. Considering the result of X-ray diffraction in which a sharp Ag (200) peak was observed, it can be seen that a (100) single crystal thin film of silver was formed. From the width between streaks as seen from <110>, the lattice spacing of silver (110) is 2.88A,
Based on the width between the streaks from <100>, the lattice spacing of silver (100) is 4.08A. This film was found to have good flatness because the pattern of FIG. 6 was composed of streaks and the surface was a mirror surface. A mirror-flat silver (100) single crystal thin film with good flatness was obtained only at substrate temperatures between 50 ° C and 250 ° C. On the other hand, when the substrate temperature was lower than 50 ° C., the silver thin film was polycrystalline. The sample prepared at a temperature higher than 250 ° C. was a (100) single crystal thin film, but the sample surface was clouded and the surface flatness was poor. Similar results were obtained also when a hydrofluoric acid cleaned Si (100) substrate was used. If a silver thin film is formed on a Si (100) substrate without performing hydrofluoric acid cleaning, a part of the surface may become cloudy and the flatness may deteriorate.
次に、基板としてフッ酸洗浄を行ったSi（111）を用
い、基板温度を−50℃から600℃の条件で1500Aの厚さの
銀薄膜を作製し、Ｘ線回折およびRHEEDにより、それぞ
れの膜の結晶性を調べた。基板温度150℃のときの結果
を第５図に、電子顕微鏡写真を第７図（ａ）、（ｂ）に
示す。第７図の２つのパターンは互いに30度離れてお
り、６回対称のパターンで、第７図（ａ）は〈110〉、
第７図（ｂ）は〈221〉から見たものである。鋭いAg（1
11）ピークが観測されたＸ線回折の結果とあわせて考え
ると、銀の（111）単結晶ができているのがわかる。〈1
10〉および〈221〉からみたストリーク間の幅から銀の
（110）の格子面間隔は2.88Aである。この膜は、第７図
のパターンがストリークから成り、しかも表面が鏡面で
あることから平坦性もよいことがわかった。平坦性の良
い鏡面の銀の（111）単結晶薄膜は基板温度50℃〜250℃
の間でのみ得られた。一方、基板温度が50℃より低いと
きには銀薄膜は多結晶であった。また、250℃より高温
で作製した試料は（111）単結晶薄膜だが、試料表面が
白濁し表面の平坦性が悪かった。なおフッ酸洗浄をおこ
なわずにSi（111）基板上に銀薄膜を作製すると表面の
一部が白濁し平坦性が悪くなる場合があった。Next, using Si (111) that has been subjected to hydrofluoric acid cleaning as a substrate, a silver thin film having a thickness of 1500 A is prepared at a substrate temperature of −50 ° C. to 600 ° C. The crystallinity of the film was examined. FIG. 5 shows the results when the substrate temperature was 150 ° C., and FIGS. 7 (a) and 7 (b) show electron micrographs. The two patterns in FIG. 7 are 30 degrees apart from each other and are six-fold symmetrical patterns. FIG. 7 (a) shows <110>,
FIG. 7B is viewed from <221>. Sharp Ag (1
11) Considering the result of the X-ray diffraction with the observed peak, it can be seen that a silver (111) single crystal is formed. <1
Based on the width between streaks as viewed from 10> and <221>, the lattice spacing of silver (110) is 2.88A. This film was found to have good flatness because the pattern of FIG. 7 was composed of streaks and the surface was a mirror surface. Substrate temperature of 50 ° C to 250 ° C with mirror flat silver (111) single crystal thin film
Only obtained between. On the other hand, when the substrate temperature was lower than 50 ° C., the silver thin film was polycrystalline. The sample prepared at a temperature higher than 250 ° C. was a (111) single crystal thin film, but the sample surface was clouded and the surface flatness was poor. Note that when a silver thin film is formed on a Si (111) substrate without performing hydrofluoric acid cleaning, a part of the surface may become cloudy and the flatness may deteriorate.
つぎにこのようにして作製した平坦性のよい銀単結晶
薄膜、Ag（100）あるいはAg（111）上にCo/PdおよびCo/
Au人工格子を作製しVSMおよびトルク磁力計で垂直磁気
異方性エネルギーを求め、MgO（100）、Si（100）およ
びSi（111）基板上に直接Co/Pd人工格子を作製した場合
と比較を行った。作製したCo/PdおよびCo/Au人工格子は
すべて二元イオンビームスパッタ法で作製したものでCo
層が3A、Pd層ないしAu層が60A、繰り返し周期が40回で
ある。その結果を第１表および第２表に示す。Next, Co / Pd and Co / Pd were deposited on Ag (100) or Ag (111), a silver single crystal thin film with good flatness thus produced.
The perpendicular magnetic anisotropy energy was determined using the Au artificial lattice and VSM and torque magnetometer, and compared with the case where the Co / Pd artificial lattice was produced directly on MgO (100), Si (100) and Si (111) substrates. Was done. All Co / Pd and Co / Au artificial lattices were fabricated by binary ion beam sputtering.
The layer is 3 A, the Pd layer or Au layer is 60 A, and the repetition cycle is 40 times. The results are shown in Tables 1 and 2.
表の通り、銀の単結晶薄膜をバッファー層として用い
ることにより、Co/PdおよびCo/Au両者とも垂直磁気異方
性エネルギーが高く、特性のよい垂直磁化膜を得ること
ができた。また、Co/PdではAg（111）のほうが、Co/Au
ではAg（100）のほうが効果が高い。 As shown in the table, by using the silver single crystal thin film as the buffer layer, both perpendicular magnetic anisotropy energies of Co / Pd and Co / Au were high, and a perpendicular magnetization film with good characteristics could be obtained. In Co / Pd, Ag (111) is better than Co / Au
Then Ag (100) is more effective.
（発明の効果） 以上実施例にて説明したように本発明によれば、表面
平坦性のよい（100）、および（111）の銀単結晶薄膜が
得られ、これをバッファー層として用いることにより、
従来のものより特性のよい金属人工格子を作製すること
が出来るものである。(Effects of the Invention) According to the present invention, as described in the above examples, silver (100) and (111) silver single crystal thin films having good surface flatness can be obtained. ,
It is possible to produce a metal artificial lattice having better characteristics than conventional ones.
第１図および第２図は本発明の単結晶銀薄膜の構造を示
す模式図。第３図は本発明を実施するために用いたイオ
ンビームスパッタ装置の模式図。 第４図はMgO（100）基板上に作製したAg薄膜のＸ線回折
図、第６図（ａ）、（ｂ）はその電子顕微鏡写真、第５
図はSi（111）基板上に作製したAg薄膜のＸ線回折図、
第７図（ａ）、（ｂ）はその電子顕微鏡写真。 図において、１はSi又はMgO基板、２はAg単結晶膜、５
はターゲット、７はシャッター、10は真空チャンバー、
11はイオン源である。1 and 2 are schematic diagrams showing the structure of a single crystal silver thin film of the present invention. FIG. 3 is a schematic view of an ion beam sputtering apparatus used for carrying out the present invention. FIG. 4 is an X-ray diffraction diagram of an Ag thin film formed on a MgO (100) substrate, FIGS. 6 (a) and (b) are electron micrographs thereof, and FIG.
The figure shows an X-ray diffraction diagram of an Ag thin film fabricated on a Si (111) substrate.
FIGS. 7A and 7B are electron micrographs. In the figure, 1 is a Si or MgO substrate, 2 is an Ag single crystal film, 5
Is a target, 7 is a shutter, 10 is a vacuum chamber,
11 is an ion source.
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｃ３０Ｂ 29/68 Ｃ３０Ｂ 29/68 (56)参考文献 特開 昭54−94479（ＪＰ，Ａ) 特開 昭61−237423（ＪＰ，Ａ) 特公 昭42−243（ＪＰ，Ｂ１) 特公 昭49−45464（ＪＰ，Ｂ１) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/00 - 15/58 C30B 23/02 C30B 29/68 ＣＡ（ＳＴＮ) ＪＩＣＳＴファイル（ＪＯＩＳ)Continuation of the front page (51) Int.Cl. 7 Identification code FI C30B 29/68 C30B 29/68 (56) References JP-A-54-94479 (JP, A) JP-A-61-237423 (JP, A) JP-B-42-243 (JP, B1) JP-B-49-45464 (JP, B1) (58) Fields investigated (Int. Cl. 7 , DB name) C23C 14/00-15/58 C30B 23/02 C30B 29/68 CA (STN) JICST file (JOIS)
Claims (3)
ネシウム（100）基板上、ないしシリコン（100）基板上
にイオンビームスパッタ法により形成することを特徴と
する銀（100）単結晶薄膜の製造方法。1. A silver (100) single crystal thin film formed by ion beam sputtering on a magnesium oxide (100) substrate or a silicon (100) substrate at a substrate temperature of 50 ° C. to 250 ° C. Manufacturing method.
（111）基板上にイオンビームスパッタ法により形成す
ることを特徴とする銀（111）単結晶薄膜の製造方法。2. A method for producing a silver (111) single crystal thin film, comprising forming a silver (111) single crystal thin film on a silicon (111) substrate at a substrate temperature of 50 ° C. or higher and 250 ° C. or lower by an ion beam sputtering method.
（100）あるいは銀（111）単結晶膜を形成し、この銀膜
の上に２種類の金属を交互に形成することを特徴とする
金属人工格子の製造方法。3. A silver (100) or silver (111) single crystal film is formed by the method of claim 1 or 2, and two kinds of metals are alternately formed on the silver film. Manufacturing method of metal artificial lattice.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02232086A JP3074712B2 (en) | 1990-08-31 | 1990-08-31 | Method for producing silver single crystal thin film and metal artificial lattice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02232086A JP3074712B2 (en) | 1990-08-31 | 1990-08-31 | Method for producing silver single crystal thin film and metal artificial lattice |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04116163A JPH04116163A (en) | 1992-04-16 |
| JP3074712B2 true JP3074712B2 (en) | 2000-08-07 |
Family
ID=16933782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02232086A Expired - Lifetime JP3074712B2 (en) | 1990-08-31 | 1990-08-31 | Method for producing silver single crystal thin film and metal artificial lattice |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3074712B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004533538A (en) * | 2000-07-10 | 2004-11-04 | オプネティクス コーポレイション | Double scan thin film processing system |
| NO347559B1 (en) * | 2022-06-21 | 2024-01-15 | Univ Of South Eastern Norway | Process for producing single crystal silver films |
-
1990
- 1990-08-31 JP JP02232086A patent/JP3074712B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04116163A (en) | 1992-04-16 |
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