JP3076953B2 - TGA type semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TGA type semiconductor device, and more particularly, to an inner peripheral surface of a through hole communicating a conductive circuit pattern on an upper surface side and a conductive wiring pattern on a lower surface side of a semiconductor element mounting substrate. The present invention relates to a configuration of a through hole in which a conductor layer is provided.

[0002]

2. Description of the Related Art Conventionally, semiconductor devices such as ICs and LSIs have
It is connected to the connection terminal of the wiring pattern on the mounting board (printed board) using solder or the like. These are DIs in which a large number of terminal leads protrude from the periphery of the resin sealing body.
In addition to P, SOP, QFP, etc., a solder ball is formed on the lower surface side of the semiconductor element mounting board, which is also called a BGA (ball grid array), and is mounted on a mounting board using the solder ball. A semiconductor device to be connected has been proposed. This semiconductor device is mounted on a mounting board (printed board)
In order to mount the device on the mounting board, it is only necessary to place the device on a wiring pattern on the mounting board, perform positioning, and fix the device by heating.

As an example of this, for example, US Pat.
216278. This semiconductor device is provided with a through hole in which a conductor layer made of a copper plating layer is formed on the inner peripheral surface of the through hole, a semiconductor element mounting substrate having a circuit pattern formed on both surfaces, and a semiconductor element mounted on the surface thereof, One end of the bonding wire is connected to one of the electrode pads of the semiconductor element, and the other end is connected to one of the terminal leads of the circuit pattern to form an electrical conduction circuit, and the surface side is sealed. A resin sealed body sealed with resin,
There is a so-called BGA (ball grid array) in which solder balls (solder balls) are formed on the back side of the substrate.

[0004] Such a BGA (Ball Grid Grid)
For mounting an array) type semiconductor device on a mounting board, cream solder or flux is applied to the connection terminals of the wiring pattern on the mounting board (printed board), and the solder balls (solder balls) are positioned on the connection terminals. Let
After that, it is heated through a reflow device to
The ball (solder ball) is melted and connected to the connection terminal on the mounting board (printed board) to complete the process.

[0005]

However, since solder balls (solder balls) are provided on the back surface of this type of semiconductor device, the solder balls may fall off or be damaged during handling such as transportation. This causes problems such as deterioration of the surface state and deterioration of the bonding characteristics. Therefore, there is a problem that a carrier for protecting the semiconductor device is required, and the cost of the semiconductor device is increased.

Also, at the time of mounting, the solder ball (solder ball) melted by the reflow device is crushed by the bonding pressure or its own weight, the diameter of the solder ball becomes large, and the solder ball protrudes from the connection terminal area and other connection terminals or There is a possibility that a solder bridge is formed between the terminal lead and the like,
There is a problem that it is not possible to cope with connection with a fine pattern having a narrow pitch.

The present invention has been made in view of the above circumstances, and has a highly reliable connection structure which is easy to mount and handle even when connecting to a fine pattern with a narrow pitch. It is intended to provide a device.

[0008]

In order to achieve the above object, a TGA type semiconductor device according to the present invention is provided with through holes arranged in a lattice pattern in a specific region of a semiconductor element mounting board, and the A TGA (through-hole grid array) type semiconductor device in which a semiconductor element is mounted on an upper surface side and an electrical conduction circuit internally connected to an electrode terminal of the semiconductor element is formed so as to surround the semiconductor element. In addition, a conductive layer made of Ni for easily dissociating the conductive bonding material is provided on the inner peripheral surface of the through-hole, and the conductive bonding material of cream solder which easily separates from the conductive layer is provided inside the through-hole. It is characterized by being filled.

[0009]

According to the TGA type semiconductor device according to the first aspect of the present invention, the conductive bonding material filled in the through hole and the conductive bonding material on the inner peripheral surface of the through hole are easily separated. Since the conductive layer is provided with a conductive layer capable of being electrically connected, by heating the conductive layer, only a necessary amount of the conductive bonding material necessary for electrical coupling is transferred from the inner peripheral surface of the through hole to the connection terminal area of the mounting board. The TGA type semiconductor device can be easily joined to the connection terminal of the mounting board. Thereby, it is possible to cope with the extremely high precision and fine pitch of the connection terminals on the mounting board.

Further, since it is not necessary to form a projection of a solder ball (solder ball) on the back side of the semiconductor device, the manufacturing process of the semiconductor device is simplified. Handling becomes easy, and the bonding characteristics are remarkably improved, and the productivity is remarkably improved.

Furthermore, the quality of the bonding between the semiconductor device and the mounting substrate can be checked by a simple appearance inspection for checking whether or not the conductive bonding material has been detached from the upper surface.

[0012]

Next, an embodiment of the present invention will be described with reference to the accompanying drawings.

FIG. 1 shows a TG according to an embodiment of the present invention.
FIG. 2 is a plan view showing an A-type semiconductor device, FIG. 2 is a cross-sectional view showing an outline of the configuration of a TGA type semiconductor device according to an embodiment of the present invention, and FIG. 3 is a through hole provided in the TGA type semiconductor device according to the embodiment of the present invention. FIG. 4 is a sectional view showing an outline of a mounted state of a semiconductor device according to an embodiment of the present invention.

First, as shown in FIGS. 1 and 2, a TGA type semiconductor device 10 according to an embodiment of the present invention is made of a quadrilateral glass cloth epoxy resin, and is made of a conventional means such as an additive method or a subtractive method. The semiconductor element 13 is mounted on the semiconductor element mounting layer 12 formed on the upper surface side of the semiconductor element mounting substrate 11 formed by the above.

One end is connected to one of the electrode terminals 14 of the semiconductor element 13 and the other end is connected to one of the terminal leads 16 of the conductor circuit pattern 15 formed on the upper surface of the substrate 11.
In this way, the bonding wires 17 are connected to form an electrical conduction circuit.

One end of the semiconductor element 13, the bonding wire 17 and the conductor circuit pattern 15 is sealed with a sealing resin.

Here, in the semiconductor device 10,
A conductor circuit pattern 15 formed on the upper surface of the substrate 11 and an external connection pad 19 of a conductor wiring pattern 18 formed on the lower surface thereof are electrically connected along the outer edge of the substrate 11 to the inside thereof. A through hole 20 to be connected is formed.

Moreover, the through hole 20 is provided on its inner peripheral surface with the conductor layer 20b from which the conductive bonding material 25 can be easily detached.
1 and 2 in which the conductive bonding material 25 is filled.

Here, as an example of the embodiment, a copper plating layer 21 and a nickel plating layer 22 are laminated on the conductor layer 20b of the through hole 20 from the inner layer to the surface layer. The nickel plating layer 22 in contact with air on the inner peripheral surface of the through hole 20 has a property that the solder is easily dissociated. The conductive bonding material 25 filled therein is filled with cream solder 25a, which is an example of the conductive bonding material 25, by a conventional means. Further, a cover coat 26 is formed on a required portion of the semiconductor element mounting substrate with a solder resist which is an example of an insulator. Here, as can be seen from FIGS. 2 and 3, the conductive bonding material 25 is easily dissociated from the inner peripheral surface of the through hole 20 at the time of bonding, and thus protrudes to the back surface side of the semiconductor element substrate 11 in the through hole 20 portion. The protrusions of the cream solder 25a can be formed to be approximately the same height as the cover coat 26.

Subsequently, in mounting the TGA type semiconductor device 10 according to one embodiment of the present invention, as shown in FIG.
By moving a transfer head (not shown) that has absorbed the TGA semiconductor device onto the bonding position of the bonding terminal 24 of the mounting board (PWB) 23, the through-hole of the TGA semiconductor device corresponding to each of the bonding terminals is moved. The TGA type semiconductor device 10 is mounted on the mounting substrate by positioning the hole 20 and lowering the mounting head.

Next, when the mounting board 23 is carried into a reflow device (not shown) and heated, the cream solder 25a filled in the through hole is melted to improve the fluidity. Through hole 20
Is formed on the inner peripheral surface of the substrate with nickel plating that allows the solder to be easily dissociated.
Easily detached from the conductor layer 20b on the inner peripheral surface by its own weight, and the TGA type semiconductor device 10 and the mounting substrate 23 are joined to complete the mounting.

Here, if a mounting board in which cream solder is thinly applied to the bonding terminal 24 of the mounting board by a screen printing method is used, the bonding property can be further improved. Further, in this configuration, since the amount of cream solder necessary for connection is detached, the height of the cream solder 25a in the through hole 20 projecting to the back surface side of the semiconductor element substrate 11 can be suppressed, and furthermore, FIG. As shown in (2), the area occupied by the formed bonding solder 25a falls within the range of the size of the bonding terminal 24. Therefore, the solder ball melted at the time of reflow, which has occurred during mounting of the BGA type semiconductor device of the related art, is crushed by the weight of the BGA type semiconductor device or the bonding pressure, and protrudes from the bonding terminal 24 area, and the other adjacent portion. There is no fear of forming a solder bridge between the bonding terminal 24 regions. This makes it possible to reduce the terminal lead interval of the semiconductor device, and it is possible to meet the demand for a narrow pitch between the terminal leads of the semiconductor device.

Although the present invention has been described based on the embodiments, the present invention is not limited to these embodiments, and any change in design or the like without departing from the scope of the present invention is included in the present application.

[0024]

As described above, the TG of the present invention can be used.
According to the A-type semiconductor device, a conductor layer capable of easily separating the conductive bonding material is formed on the inner peripheral surface, and a through hole filled with the conductive bonding material is provided therein. Further, the formation of solder balls is not required as compared with the conventional BGA type semiconductor device. As a result, handling becomes easy, production efficiency is remarkably improved, and manufacturing cost can be reduced. Further, it is possible to meet a demand for a narrow pitch between terminal leads of a semiconductor device. In addition, the appearance can be inspected using a simple camera or the like without using an expensive X-ray inspection apparatus as in the related art.

[Brief description of the drawings]

FIG. 1 is a plan view showing a TGA type semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating an outline of a configuration of a TGA type semiconductor device according to an embodiment of the present invention.

FIG. 3 is a partial cross-sectional view schematically illustrating a configuration of a through hole provided in a TGA type semiconductor device according to an example of the present invention.

FIG. 4 is a cross-sectional view illustrating an outline of a mounted state of a semiconductor device according to an embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 TGA type semiconductor device 11 Semiconductor element substrate 12 Semiconductor element mounting layer 13 Semiconductor element 14 Electrode terminal of semiconductor element 15 Conductor circuit pattern 16 Terminal lead 17 Bonding wire 18 Conductor wiring pattern 19 External connection pad 20 Through hole 20a Through hole 20b Conductive layer DESCRIPTION OF SYMBOLS 21 Copper plating layer 22 Nickel plating layer 23 Mounting substrate (PWB) 24 Bonding terminal 25 Conductive bonding material 25a Cream solder 26 Cover coat

Claims (1)

(57) [Claims] A through hole arranged in a lattice pattern in a specific region of a semiconductor element mounting substrate, and a semiconductor element is mounted on an upper surface side of the semiconductor element mounting substrate so as to surround the periphery thereof. In a TGA (through hole grid array) type semiconductor device in which an electric conduction circuit internally connected to an electrode terminal of the semiconductor element is formed, a conductive bonding material is easily applied to an inner peripheral surface of the through hole. A method of manufacturing a TGA type semiconductor device, comprising: providing a conductive layer made of Ni to be dissociated; and filling the inside of the through hole with a conductive bonding material of cream solder which is easily separated from the conductive layer. .