JP3085651B2 - Magnetic field sensor - Google Patents
Magnetic field sensorInfo
- Publication number
- JP3085651B2 JP3085651B2 JP08236775A JP23677596A JP3085651B2 JP 3085651 B2 JP3085651 B2 JP 3085651B2 JP 08236775 A JP08236775 A JP 08236775A JP 23677596 A JP23677596 A JP 23677596A JP 3085651 B2 JP3085651 B2 JP 3085651B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- field sensor
- conductor
- induced voltage
- strip conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Measuring Magnetic Variables (AREA)
- Measurement Of Current Or Voltage (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明はパーミアンス測定装
置の検出コイルなどに利用することができる磁界センサ
に関し、さらに言えばストリップ導体を用いた磁界セン
サに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic field sensor which can be used as a detection coil of a permeance measuring device, and more particularly to a magnetic field sensor using a strip conductor.
【0002】[0002]
【従来の技術】従来の磁界センサとしては、磁気抵抗素
子やホール素子が一般的に知られている。また、マイク
ロストリップ線路を用いて高周波磁界の検出も可能にし
た従来のマイクロストリップ線路を用いた磁界センサと
して、特開平8−129058号に開示されているもの
がある。マイクロストリップ線路を用いたこの磁界セン
サ50は、図8に示す如く、誘電体基板51に設けた貫
通孔51−1の外周に沿って、誘電体基板51の表面に
ほぼ1ターンであって、かつ特性インピーダンス50Ω
のマイクロストリップ導体53を形成し、マイクロスト
リップ導体53の開放端(終端側)を誘電体基板51の
裏面に形成した接地導体52と50Ωの終端抵抗54に
て接続することによって終端したものである。2. Description of the Related Art As a conventional magnetic field sensor, a magnetoresistive element and a Hall element are generally known. Further, as a conventional magnetic field sensor using a microstrip line capable of detecting a high-frequency magnetic field using a microstrip line, there is one disclosed in Japanese Patent Application Laid-Open No. 8-129958. As shown in FIG. 8, the magnetic field sensor 50 using the microstrip line has almost one turn on the surface of the dielectric substrate 51 along the outer periphery of the through hole 51-1 provided in the dielectric substrate 51. And characteristic impedance 50Ω
And terminated by connecting the open end (termination side) of the microstrip conductor 53 to the ground conductor 52 formed on the back surface of the dielectric substrate 51 by a termination resistor 54 of 50Ω. .
【0003】[0003]
【発明が解決しようとする課題】しかしながら、上記し
た従来の磁気抵抗効果素子やホール素子による磁界セン
サは、使用周波数帯域が低く、例えばホール素子の場合
10MHz程度の高周波磁界の検出が限度であって、G
Hz帯域の高周波磁界の検出はできないという問題点が
あった。However, the above-mentioned conventional magnetic field sensor using a magnetoresistive element or a Hall element has a low operating frequency band. For example, in the case of a Hall element, detection of a high-frequency magnetic field of about 10 MHz is a limit. , G
There is a problem that a high-frequency magnetic field in the Hz band cannot be detected.
【0004】また、マイクロストリップ線路を用いた上
記従来の磁界センサは、高周波磁界の検出が可能となっ
て好都合であるが、誘起電圧に電界による影響が残存す
るという問題点のほかに、誘起電圧が低く、また、感度
も低いという問題点があった。The above-mentioned conventional magnetic field sensor using a microstrip line is advantageous because it can detect a high-frequency magnetic field. And the sensitivity is low.
【0005】本発明は、GHz帯域の高周波磁界の検出
も可能であり、電界による誘起電圧の比率が少なく、か
つ高感度の磁界センサを提供することを目的とする。An object of the present invention is to provide a magnetic field sensor capable of detecting a high-frequency magnetic field in a GHz band, having a small ratio of an induced voltage due to an electric field, and having high sensitivity.
【0006】[0006]
【課題を解決するための手段】本発明にかかる磁界セン
サは、ほぼ中央に貫通孔が設けられ、貫通孔を外部に連
通させる切欠き部が設けられ、互いの貫通孔と切欠き部
を一致させて相対向して積層させる一対の誘電体配線基
板のそれぞれの外表面に接地導体を各別に形成し、貫通
孔を挾んで切欠き部に対向する所定位置を始端位置と
し、C字状の一方の半周部における所定位置を終端位置
として、始端位置からC字状の他方の半周部に沿い、切
欠き部をわたって、C字状の一方の半周部に沿って終端
位置にまで一方の誘電体配線基板の内表面にストリップ
導体を形成し、前記終端位置においてそれぞれの接地導
体とストリップ導体とを電気的に接続し、それぞれの接
地導体を電気的に接続して構成し、電気的に接続された
接地導体とストリップ導体の始端位置との間の誘起電圧
を磁界検出出力とすることを特徴とする。In the magnetic field sensor according to the present invention, a through hole is provided substantially at the center, and a notch for communicating the through hole to the outside is provided, and the through hole and the notch coincide with each other. Ground conductors are separately formed on the respective outer surfaces of a pair of dielectric wiring boards to be stacked facing each other, and a predetermined position facing the notch across the through hole is set as a start end position, and a C-shaped is formed. A predetermined position in one half-peripheral portion is defined as an end position. From the starting end position, along the other C-shaped half-periphery, across the notch, and along one C-shaped half-periphery to the end position. Forming a strip conductor on the inner surface of the dielectric wiring board, electrically connecting each ground conductor and the strip conductor at the terminal position, electrically connecting each ground conductor, Connect the ground conductor and strip The induced voltage between the starting end position of the conductor, characterized in that the magnetic field detection output.
【0007】本発明にかかる磁界センサによれば、スト
リップ導体によってほぼ半ターンのコイルが形成され、
ストリップ導体によって形成されるコイルに鎖交する磁
束の変化により誘起電圧が発生し、ストリップ導体に誘
起する誘起電圧に基づいて高周波磁界を検出することが
できる。[0007] According to the magnetic field sensor of the present invention, an almost half-turn coil is formed by the strip conductor,
An induced voltage is generated by a change in magnetic flux linked to a coil formed by the strip conductor, and a high-frequency magnetic field can be detected based on the induced voltage induced in the strip conductor.
【0008】この場合に、ストリップ導体はそれぞれの
接地導体によってサンドイッチ状に挾まれているため、
外部電界からシールドされた状態となり、かつそれぞれ
の接地導体はストリップ導体の始端から切欠き部を結ぶ
線に対して上下線対称に形成されているため電界による
誘起電圧は打ち消されて、主に磁界による誘起電圧のみ
が取り出されることになる。さらに、誘起電圧が高電位
のために低周波磁界におけるS/Nを維持しつつ広帯域
な磁界の検出が可能となる。In this case, since the strip conductor is sandwiched between the ground conductors,
It is shielded from the external electric field, and each ground conductor is formed symmetrically with respect to the line connecting the notch from the beginning of the strip conductor. Only the induced voltage due to the Further, since the induced voltage is high, it is possible to detect a magnetic field over a wide band while maintaining S / N in a low-frequency magnetic field.
【0009】本発明にかかる磁界センサを用いて、磁性
薄膜のパーミアンスを測定するには、相対向する一対の
平行状伝送線路から構成されかつ特性インピーダンス5
0Ωの終端抵抗によって終端された励磁コイルに通電し
て発生させたほぼ一様な高周波磁界内に本発明の磁界セ
ンサが挿入されて、該磁界センサの接地導体とストリッ
プ導体との間の誘起電圧に基づき、前記磁界センサの貫
通孔に挿入される磁性薄膜のパーミアンスの測定がなさ
れる。In order to measure the permeance of a magnetic thin film using the magnetic field sensor according to the present invention, a characteristic impedance of a pair of parallel transmission lines opposed to each other is measured.
The magnetic field sensor of the present invention is inserted into a substantially uniform high-frequency magnetic field generated by energizing an exciting coil terminated by a terminating resistor of 0Ω, and an induced voltage between a ground conductor and a strip conductor of the magnetic field sensor is generated. Based on the above, the permeance of the magnetic thin film inserted into the through hole of the magnetic field sensor is measured.
【0010】また、本発明にかかる磁界センサを用い
て、磁性薄膜のパーミアンスを測定するには、相対向す
る一対の平行状伝送線路から構成されかつ特性インピー
ダンス50Ωの終端抵抗によって終端された励磁コイル
に通電して発生させたほぼ一様な高周波磁界内に本発明
の磁界センサが2個挿入されて、貫通孔に磁性薄膜が挿
入された状態における一方の磁界センサの接地導体とス
トリップ導体との間の誘起電圧と、貫通孔に磁性薄膜無
挿入の状態における他方の磁界センサの接地導体とスト
リップ導体との間の誘起電圧とに基づき、前記一方の磁
界センサの貫通孔に挿入される磁性薄膜のパーミアンス
の測定がなされる。In order to measure the permeance of a magnetic thin film using the magnetic field sensor according to the present invention, an exciting coil constituted by a pair of parallel transmission lines facing each other and terminated by a terminating resistor having a characteristic impedance of 50Ω is used. When two magnetic field sensors of the present invention are inserted into a substantially uniform high-frequency magnetic field generated by energizing the magnetic field and the magnetic thin film is inserted into the through hole, the magnetic field sensor and the ground conductor and the strip conductor of one magnetic field sensor are inserted. Magnetic thin film inserted into the through-hole of the one magnetic field sensor based on the induced voltage between the magnetic field sensor and the induced voltage between the ground conductor and the strip conductor of the other magnetic field sensor in a state where the magnetic thin film is not inserted into the through-hole. Is measured.
【0011】パーミアンスの測定は、磁性薄膜が挿入さ
れていないときにおける接地導体とストリップ導体との
間の誘起電圧の測定値(校正用として用いられる高周波
磁界の測定値)と磁性薄膜が挿入された状態における接
地導体とストリップ導体との間の誘起電圧の測定値とに
基づいてなされるが、2個の磁界センサを高周波磁界内
に挿入することにより、2個の磁界センサの出力によっ
て両誘起電圧の測定値が同時に得られ、1個の磁界セン
サを用いた場合に比較して測定回数が半減することにな
って測定が短時間で行える。In the measurement of permeance, the measured value of the induced voltage between the ground conductor and the strip conductor when the magnetic thin film is not inserted (the measured value of the high-frequency magnetic field used for calibration) and the magnetic thin film were inserted. It is based on the measured value of the induced voltage between the ground conductor and the strip conductor in the state, but by inserting the two magnetic field sensors into the high frequency magnetic field, the output of the two magnetic field sensors allows the two induced voltages to be measured. Are obtained at the same time, and the number of measurements is halved compared to the case where one magnetic field sensor is used, so that the measurement can be performed in a short time.
【0012】[0012]
【発明の実施の形態】以下、本発明を実施の形態により
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to embodiments.
【0013】図1は本発明の実施の一形態にかかる磁界
センサの構成を示す一部断面斜視図であり、図2は本発
明の実施の一形態にかかる磁界センサの構成を示す分解
斜視図である。FIG. 1 is a partially sectional perspective view showing a configuration of a magnetic field sensor according to one embodiment of the present invention, and FIG. 2 is an exploded perspective view showing a configuration of the magnetic field sensor according to one embodiment of the present invention. It is.
【0014】本発明の実施の一形態にかかる磁界センサ
1は、ほぼ中央に貫通孔6が設けられ、かつ貫通孔6を
外部に連通させる切欠き部G(以下、ギャップ部Gとも
記す)が設けられてほぼC字状に形成されたテフロン基
板またはガラスエポキシ樹脂基板などからなる誘電体配
線基板2−1と、ほぼ中央に貫通孔6が設けられ、かつ
貫通孔6を外部に連通させる切欠き部Gが設けられてほ
ぼC字状に形成されたテフロン基板またはガラスエポキ
シ樹脂基板などからなる誘電体配線基板2−2とを、誘
電体配線基板2−1および誘電体配線基板2−2の貫通
孔6が一致しかつ誘電体配線基板2−1および誘電体配
線基板2−2のギャップ部Gが一致するように相対向さ
せて積層してある。ここで、誘電体配線基板2−1と誘
電体配線基板2−2とは同一材料から構成してある。In the magnetic field sensor 1 according to one embodiment of the present invention, a through-hole 6 is provided substantially at the center, and a notch G (hereinafter, also referred to as a gap G) connecting the through-hole 6 to the outside is provided. A dielectric wiring board 2-1 formed of a Teflon substrate or a glass epoxy resin substrate and formed substantially in a C-shape, and a cut-out in which a through-hole 6 is provided substantially in the center and the through-hole 6 communicates with the outside. A dielectric wiring board 2-2 made of a Teflon substrate or a glass epoxy resin substrate or the like formed with a notch portion G and formed substantially in a C shape is combined with the dielectric wiring board 2-1 and the dielectric wiring board 2-2. Are stacked so that the through-holes 6 coincide with each other and the gap portions G of the dielectric wiring board 2-1 and the dielectric wiring board 2-2 match. Here, the dielectric wiring board 2-1 and the dielectric wiring board 2-2 are made of the same material.
【0015】一方、誘電体配線基板2−1および誘電体
配線基板2−2の外表面にはそれぞれ接地導体3−1お
よび接地導体3−2が各別に形成してあって、貫通孔6
を挟んで接地導体3−1および接地導体3−2のギャッ
プ部Gに対向する端部位置P(以下、始端位置Pとも記
す)において接地導体3−1および接地導体3−2を同
軸ケーブル5の外部導体(外導体)に電気的に接続して
ある。On the other hand, a ground conductor 3-1 and a ground conductor 3-2 are separately formed on the outer surfaces of the dielectric wiring board 2-1 and the dielectric wiring board 2-2, respectively.
The ground conductor 3-1 and the ground conductor 3-2 are connected to the coaxial cable 5 at an end position P (hereinafter, also referred to as a start end position P) of the ground conductor 3-1 and the ground conductor 3-2 opposed to the gap portion G with the. Are electrically connected to the outer conductor (outer conductor).
【0016】また一方、誘電体配線基板2−1上の始端
位置Pから誘電体配線基板2−1で形成されているC字
状の一方の半周部における所定位置E(以下、終端位置
Eとも記す)まで、誘電体配線基板2−1で形成されて
いるC字状の他方の半周部に沿い、ギャップ部Gをわた
って延長されて、誘電体配線基板2−1で形成されてい
るC字状の一方の半周部に沿って、誘電体配線基板2−
1の内表面に50Ωの特性インピーダンスを有するほぼ
半ターンのストリップ導体4が形成してあり、ストリッ
プ導体4の終端位置Eにおいて誘電体配線基板2−1お
よび誘電体配線基板2−2を貫通してストリップ導体4
と接地導体3−1および接地導体3−2とを電気的に接
続して終端し、ストリップ導体4の始端位置Pにおいて
ストリップ導体4を同軸ケーブル5の中心導体(内導
体)に電気的に接続して、ストリップ導体4と接地導体
3−1および接地導体3−2との間の誘起電圧を取り出
すようにしてある。On the other hand, from a starting position P on the dielectric wiring board 2-1 to a predetermined position E (hereinafter referred to as an ending position E) in one of the C-shaped half-circumferential portions formed on the dielectric wiring board 2-1. Up to the following), extending along the other half of the C-shape formed by the dielectric wiring board 2-1 and across the gap G to form the C formed by the dielectric wiring board 2-1. The dielectric wiring board 2-
A strip conductor 4 having a characteristic impedance of 50Ω and having a half-turn is formed on the inner surface of the substrate 1. At the end position E of the strip conductor 4, the strip conductor 4 penetrates the dielectric wiring board 2-1 and the dielectric wiring board 2-2. Strip conductor 4
And the ground conductor 3-1 and the ground conductor 3-2 are electrically connected and terminated, and the strip conductor 4 is electrically connected to the center conductor (inner conductor) of the coaxial cable 5 at the start position P of the strip conductor 4. Then, an induced voltage between the strip conductor 4 and the ground conductors 3-1 and 3-2 is taken out.
【0017】したがって、磁界センサ1は、ギャップ部
Gを通って形成された特性インピーダンス50Ωのほぼ
半ターンのストリップ導体4が誘電体配線基板2−1と
2−2を介して接地導体3−1および接地導体3−2と
の間にサンドイッチ状にはさみ込まれ、ストリップ導体
4はその終端(E)において誘電体配線基板2−1およ
び誘電体配線基板2−2を貫通して接地導体3−1およ
び接地導体3−2に電気的に接続され、ストリップ導体
4はその始端位置Pにおいて同軸ケーブル5の中心導体
に電気的に接続され、かつ接地導体3−1および接地導
体3−2は同軸ケーブル5の外部導体に電気的に接続さ
れて、ストリップ導体4の誘起電圧を同軸ケーブル5に
よって取り出すように構成されていることになる。Therefore, in the magnetic field sensor 1, the strip conductor 4 having a characteristic impedance of 50Ω and approximately half turn formed through the gap G is connected to the ground conductor 3-1 via the dielectric wiring boards 2-1 and 2-2. And the strip conductor 4 is sandwiched between the ground conductor 3-2 and the ground conductor 3-2, and the strip conductor 4 penetrates through the dielectric wiring board 2-1 and the dielectric wiring board 2-2 at its end (E). 1 and the ground conductor 3-2, the strip conductor 4 is electrically connected to the center conductor of the coaxial cable 5 at the start position P, and the ground conductor 3-1 and the ground conductor 3-2 are coaxial. It is electrically connected to the outer conductor of the cable 5, so that the induced voltage of the strip conductor 4 is extracted by the coaxial cable 5.
【0018】上記のように構成された磁界センサ1にお
いて、ストリップ導体4は接地導体3−1および接地導
体3−2によってサンドイッチ状に挾まれているため外
部電界からシールドされて、シールディットループコイ
ルとなる。また接地導体3−1および接地導体3−2に
よるそれぞれの接地導体面がギャップ部Gとストリップ
導体4の始端位置Pとを結ぶ線に対して上下線対称に形
成されているため電界による誘起電圧が差動的に抑制さ
れることになって、電界による誘起電圧は打ち消され、
主に磁界による誘起電圧が取り出される。In the magnetic field sensor 1 constructed as described above, since the strip conductor 4 is sandwiched between the ground conductor 3-1 and the ground conductor 3-2, the strip conductor 4 is shielded from an external electric field, so that the shielded digit loop coil is formed. Becomes Since the ground conductor surfaces of the ground conductor 3-1 and the ground conductor 3-2 are formed symmetrically with respect to a line connecting the gap G and the start end position P of the strip conductor 4, the induced voltage due to the electric field is generated. Is differentially suppressed, the induced voltage due to the electric field is canceled out,
A voltage induced mainly by a magnetic field is extracted.
【0019】また、磁界センサ1におけるストリップ導
体4によるコイルの単位面積当たりの誘起電圧は後記の
如く、特開平8−129058号に開示されている磁界
センサ50におけるマイクロストリップ導体53の単位
面積当たりの誘起電圧の約3倍であるため、低周波磁界
におけるS/Nを維持しつつ広帯域な磁界の検出が可能
となる。Further, the induced voltage per unit area of the coil by the strip conductor 4 in the magnetic field sensor 1 is, as described later, per unit area of the microstrip conductor 53 in the magnetic field sensor 50 disclosed in Japanese Patent Application Laid-Open No. 8-129958. Since it is about three times the induced voltage, it is possible to detect a magnetic field in a wide band while maintaining S / N in a low-frequency magnetic field.
【0020】さらに、磁界センサ1は磁界センサ1自身
がバランとして動作するため、信号伝送用の同軸ケーブ
ル5の不平衡モードと磁界センサ1の平衡モードを整合
させる役割も果たすことになる。Further, since the magnetic field sensor 1 itself operates as a balun, the magnetic field sensor 1 also serves to match the unbalanced mode of the signal transmission coaxial cable 5 with the balanced mode of the magnetic field sensor 1.
【0021】誘電体配線基板2−1および誘電体配線基
板2−2として誘電率εr がεr =5、厚さdがd=
0.5mmのテフロンのプリント基板を用い、ギャップ
部Gの長さgを1mmに、ギャップ部Gからテフロンの
誘電体配線基板2−1および誘電体配線基板2−2の上
下方向の長さl(エル)を2mmに、誘電体配線基板2
−1および誘電体配線基板2−2の貫通孔6の長さwを
26mmに、プリント基板の貫通孔6の高さhを2mm
に、ストリップ導体4の線幅cwを0.5mmとした場
合において、ストリップ導体4の始端位置Pを基準にス
トリップ導体4に沿ったストリップ導体4上の各位置に
おける特性インピーダンスを、時間領域反射測定法(T
DR)(HP5421Aヒューレットパッカード社製)
により測定したとき、図3に示す如くであった。図3か
らも明らかなように、ギャップ部Gに至るまでのストリ
ップ導体4の特性インピーダンスは50Ωでほぼ一定で
あり、ギャップ部Gの位置において急激に増加してほぼ
110Ωに達し、ギャップ部Gの位置を過ぎると急激に
低下してほぼ0Ωであり、ストリップ導体4の始端位置
Pからギャップ部Gに至るまでの特性インピーダンスは
ほぼ50Ωであった。As the dielectric wiring board 2-1 and the dielectric wiring board 2-2, the dielectric constant ε r is ε r = 5 and the thickness d is d =
Using a 0.5 mm Teflon printed board, the length g of the gap G is set to 1 mm, and the vertical length l of the dielectric wiring board 2-1 and the dielectric wiring board 2-2 of the Teflon from the gap G is set. (L) to 2 mm, dielectric wiring board 2
-1 and the length w of the through hole 6 of the dielectric wiring board 2-2 is 26 mm, and the height h of the through hole 6 of the printed circuit board is 2 mm.
In the case where the line width cw of the strip conductor 4 is 0.5 mm, the characteristic impedance at each position on the strip conductor 4 along the strip conductor 4 with reference to the start position P of the strip conductor 4 is measured by time domain reflection measurement. Law (T
DR) (HP5421A Hewlett-Packard)
As shown in FIG. As is clear from FIG. 3, the characteristic impedance of the strip conductor 4 up to the gap G is almost constant at 50Ω, and rapidly increases at the position of the gap G to reach almost 110Ω. After passing through the position, it dropped sharply to about 0Ω, and the characteristic impedance from the starting position P of the strip conductor 4 to the gap G was almost 50Ω.
【0022】次に、磁界センサ1を用いた、被測定試料
としての磁性薄膜の広帯域パーミアンス測定装置につい
て説明する。Next, a broadband permeance measuring apparatus for a magnetic thin film as a sample to be measured using the magnetic field sensor 1 will be described.
【0023】図4は磁界センサ1を用いたパーミアンス
測定装置の構成を示す概観図である。FIG. 4 is a schematic view showing the configuration of a permeance measuring device using the magnetic field sensor 1.
【0024】図4に示したパーミアンス測定装置20
は、ほぼ一様な交番磁界を発生する磁界発生用の励磁コ
イル21と磁界センサ1とからなり、磁界センサ1の貫
通孔6に測定試料30が挿入されるようになっている。The permeance measuring device 20 shown in FIG.
The magnetic field sensor 1 includes an exciting coil 21 for generating a substantially uniform alternating magnetic field and the magnetic field sensor 1, and the measurement sample 30 is inserted into the through hole 6 of the magnetic field sensor 1.
【0025】励磁コイル21は平板状ストリップ線路構
成の平板状伝送線路22および23を相対向させて構成
してある。The excitation coil 21 is constituted by flat transmission lines 22 and 23 each having a flat strip line structure and opposed to each other.
【0026】平板状伝送線路22はほぼ方形状の平板状
伝送線路部分22−1と平板状伝送線路部分22−1の
両端から延びるテーパ状の平板状伝送線路部分22−
2、22−3とで形成してある。The flat transmission line 22 has a substantially rectangular flat transmission line portion 22-1 and a tapered flat transmission line portion 22- extending from both ends of the flat transmission line portion 22-1.
2, 22-3.
【0027】平板状伝送線路23も平板状伝送線路22
と同様に、ほぼ方形状の平板状伝送線路部分23−1と
この平板状伝送線路部分23−1の両端から延びるテー
パ状の平板状伝送線路部分23−2、23−3とで形成
し、さらに平板状伝送線路部分23−2の端部および平
板状伝送線路部分23−3の端部から延伸して、平板状
伝送線路部分22−1を平板状伝送線路部分23−1に
対して平行に保持し、かつ励磁電流を供給するとともに
終端抵抗24を接続するための固定用の平板状伝送線路
部分23−4および平板状伝送線路部分23−5が形成
してあり、平板状伝送線路部分23−4に設けたコネク
タ26を介して平板状伝送線路22と平板状伝送線路2
3とに高周波電磁電流を供給する。一方、平板状伝送線
路部分23−5に終端抵抗24の一端を接続し、かつ平
板状伝送線路部分23−5を貫通して平板状伝送線路部
分22−3に終端抵抗24の他端を接続して終端してあ
る。The flat transmission line 23 is also a flat transmission line 22.
Similarly to the above, the transmission line portion 23-1 is formed of a substantially square plate transmission line portion 23-1 and tapered plate transmission line portions 23-2 and 23-3 extending from both ends of the plate transmission line portion 23-1. Further, the flat transmission line portion 22-1 extends from the end of the flat transmission line portion 23-2 and the end of the flat transmission line portion 23-3 so that the flat transmission line portion 22-1 is parallel to the flat transmission line portion 23-1. And a flat transmission line portion 23-4 and a flat transmission line portion 23-5 for fixing for supplying the exciting current and connecting the terminating resistor 24 to each other. The flat transmission line 22 and the flat transmission line 2 are connected via a connector 26 provided at 23-4.
3 is supplied with a high-frequency electromagnetic current. On the other hand, one end of the terminating resistor 24 is connected to the flat transmission line portion 23-5, and the other end of the terminating resistor 24 is connected to the flat transmission line portion 22-3 through the flat transmission line portion 23-5. And is terminated.
【0028】ここで励磁コイル21は固定用の平板状伝
送線路部分23−4、23−5、テーパ状の平板状伝送
線路部分22−2、22−3、23−2、23−3を含
めてその特性インピーダンスが50Ωに設定され、50
Ωの終端抵抗24により終端して、インピーダンス整合
させてある。これは例えば1GH帯までのパーミアンス
を測定するためには、LC共振を除去する必要がある
が、上記のインピーダンス整合によりLC共振が除去さ
れる。さらに励磁コイル21内にはTEMの進行波のみ
が伝搬される。Here, the excitation coil 21 includes the fixed flat transmission line portions 23-4 and 23-5 and the tapered flat transmission line portions 22-2, 22-3, 23-2 and 23-3. The characteristic impedance is set to 50Ω
Termination is performed by a terminating resistor 24 of Ω, and impedance matching is performed. For example, in order to measure the permeance up to the 1 GHz band, it is necessary to remove the LC resonance. However, the LC resonance is removed by the above impedance matching. Further, only the traveling wave of the TEM is propagated in the exciting coil 21.
【0029】また、励磁コイル21内の電磁界からTE
M以外の高次モードを除去するために平板状伝送線路2
2、23の断面寸法および全長を上限周波数の1/2波
長とするように決めてある。本例では、例えば、wc=
50mm、Lc=15mm、平板状伝送線路22と23
の間隔deをde=10mmに構成した(図4参照)。
一方、数百MHz以上の周波数の場合において、磁界セ
ンサへの電界による誘起電圧の比率が高まると同時に磁
界による誘起電圧は測定試料30の有無や磁界センサを
構成する誘電体配線基板の材質およびサイズの影響によ
って変化するため、磁界による誘起電圧のみを抽出する
必要がある。しかるに、磁界センサ1では既に説明した
如く、磁界による誘起電圧のみが取り出される。Also, TE from the electromagnetic field in the exciting coil 21
To eliminate higher-order modes other than M
The cross-sectional dimensions and the total length of 2, 23 are determined to be 波長 wavelength of the upper limit frequency. In this example, for example, wc =
50 mm, Lc = 15 mm, flat transmission lines 22 and 23
Was set to de = 10 mm (see FIG. 4).
On the other hand, in the case of a frequency of several hundred MHz or more, the ratio of the induced voltage due to the electric field to the magnetic field sensor increases, and at the same time, the induced voltage due to the magnetic field depends on the presence or absence of the measurement sample 30 and the material and size of the dielectric wiring substrate constituting the magnetic field sensor Therefore, it is necessary to extract only the induced voltage due to the magnetic field. However, as described above, the magnetic field sensor 1 extracts only the induced voltage due to the magnetic field.
【0030】図4に示すパーミアンス測定装置20にお
いてコネクタ26を介して励磁コイル21に高周波電流
を供給し、終端抵抗24を特性インピーダンス50Ωと
したとき(整合)、終端抵抗24を除去して平板状伝送
線路22と23とを開放したときと、終端抵抗24を短
絡して平板状伝送線路22と23とを短絡したときとの
それぞれの場合に、平板状伝送線路22と23との間に
挿入された磁界センサ1の誘起電圧は図5に示す如くで
ある。図5において実線は整合の場合を、破線は短絡の
場合を、一点鎖線は開放の場合をそれぞれ示している。When a high-frequency current is supplied to the exciting coil 21 via the connector 26 in the permeance measuring device 20 shown in FIG. 4 and the terminating resistor 24 has a characteristic impedance of 50Ω (matching), the terminating resistor 24 is removed and the flat plate is formed. When the transmission lines 22 and 23 are opened and when the terminating resistor 24 is short-circuited and the plate-shaped transmission lines 22 and 23 are short-circuited, respectively, inserted between the plate-shaped transmission lines 22 and 23. The induced voltage of the magnetic field sensor 1 is as shown in FIG. In FIG. 5, the solid line shows the case of matching, the broken line shows the case of short circuit, and the dashed line shows the case of open circuit.
【0031】これに対して、磁界センサ1に代わって磁
界センサ50を用いて測定した場合には、上記と同様に
終端抵抗54にて整合のとき、終端抵抗54を除去(開
放)したときと、終端抵抗54を短絡したときとのそれ
ぞれにおける磁界センサ50の誘起電圧は図6に示す如
くである。図6において実線は整合の場合を、破線は短
絡の場合を、一点鎖線は開放の場合をそれぞれ示してい
る。On the other hand, when the measurement is performed using the magnetic field sensor 50 in place of the magnetic field sensor 1, when the matching is performed by the terminating resistor 54 as described above, when the terminating resistor 54 is removed (opened), The induced voltage of the magnetic field sensor 50 when the terminating resistor 54 is short-circuited is as shown in FIG. In FIG. 6, the solid line shows the case of matching, the broken line shows the case of short circuit, and the dashed line shows the case of open circuit.
【0032】図5と図6とを比較すれば明らかな如く、
磁界センサ1におけるストリップ導体4の場合は磁界セ
ンサ50におけるマイクロストリップ導体53の場合に
対して単位面積当たりの誘起電圧は約3倍である(例え
ば100MHz、短絡の場合、前者の誘起電圧は約32
mV、後者の誘起電圧は約10mVである)。なお、図
5および図6はストリップ導体4の面積とマイクロスト
リップ導体53の面積とが略等しい場合の測定結果であ
る。As is clear from a comparison between FIG. 5 and FIG.
In the case of the strip conductor 4 in the magnetic field sensor 1, the induced voltage per unit area is about three times that of the microstrip conductor 53 in the magnetic field sensor 50 (for example, 100 MHz; in the case of a short circuit, the induced voltage of the former is about 32).
mV, and the latter induced voltage is about 10 mV). FIGS. 5 and 6 show the measurement results when the area of the strip conductor 4 and the area of the microstrip conductor 53 are substantially equal.
【0033】励磁コイル21の終端が短絡、および開放
の場合は励磁コイル21内ではそれぞれ磁界および電界
が最大となる。磁界による誘起電圧はファラディの電磁
誘導の法則に基づき周波数に比例する。一方、電界によ
る誘起電圧は周波数の2乗に比例するため、GHz近く
の高周波域では磁界に比べて電界による誘起電圧の比率
が高まる。When the end of the exciting coil 21 is short-circuited or open, the magnetic field and the electric field become maximum in the exciting coil 21, respectively. The induced voltage due to the magnetic field is proportional to the frequency based on Faraday's law of electromagnetic induction. On the other hand, since the induced voltage due to the electric field is proportional to the square of the frequency, the ratio of the induced voltage due to the electric field is higher in the high frequency region near GHz than in the magnetic field.
【0034】図6によれば、磁界センサ50の場合、電
界による誘起電圧は周波数500MHz〜1GHzでは
磁界による誘起電圧よりも大きい。これは2つの理由に
よると考えられる。第1に磁界センサ50の接地導体5
2面内に渦電流が還流するため鎖交磁束量が同寸法の2
端子コイルに比較して小さいこと、第2にマイクロスト
リップ導体53が電界からシールドされていないことの
2つである。According to FIG. 6, in the case of the magnetic field sensor 50, the induced voltage due to the electric field is larger than the induced voltage due to the magnetic field at the frequency of 500 MHz to 1 GHz. This is thought to be for two reasons. First, the ground conductor 5 of the magnetic field sensor 50
Since the eddy current recirculates in two planes, the amount of interlinkage magnetic flux
Second, the microstrip conductor 53 is not shielded from the electric field.
【0035】一方、磁界センサ1の場合には、前記した
ように、接地導体3−1および接地導体3−2が電気シ
ールドとしての役割を果たし、磁界による誘起電圧は約
2GHzまで電界による誘起電圧よりも約1桁大きい。
これは接地導体3−1面および接地導体3−2面にギャ
ップ部Gがあり、接地導体3−1面および接地導体3−
2面を還流する渦電流が小さいためであると考えられ
る。したがって磁界センサ1では電界による誘起電圧は
GHz帯まで小さいため、測定試料30としての磁性薄
膜や誘電体配線基板2−1および誘電体配線基板2−2
の影響による電界分布および電界による誘起電圧の変化
を抑制することができ、主に測定試料30としての磁性
体による鎖交磁束の増加分を検出できると考えられる。On the other hand, in the case of the magnetic field sensor 1, as described above, the ground conductor 3-1 and the ground conductor 3-2 serve as an electric shield, and the induced voltage due to the magnetic field is reduced to about 2 GHz by the induced voltage due to the electric field. About one order of magnitude larger.
This is because there is a gap G on the ground conductor 3-1 surface and the ground conductor 3-2 surface, and the ground conductor 3-1 surface and the ground conductor 3-
It is considered that this is because the eddy current flowing back to the two surfaces is small. Therefore, in the magnetic field sensor 1, since the induced voltage due to the electric field is as small as the GHz band, the magnetic thin film, the dielectric wiring board 2-1 and the dielectric wiring board 2-2 as the measurement sample 30 are used.
It is considered that the change in the electric field distribution due to the influence of the electric field and the induced voltage due to the electric field can be suppressed, and the increase of the interlinkage magnetic flux mainly by the magnetic material as the measurement sample 30 can be detected.
【0036】次に、測定試料30として、Co85Zr3
Nb12薄膜(直径6mm、1μm厚)であり、Ar雰囲
気中20mTorr、200Wの条件で製膜し、回転磁
界中での熱処理(500℃、2hour、60rpm)
に続いて、静磁界中で熱処理(500℃、1hour)
を施したものを用い、この測定試料30の透磁率を磁界
センサ1を用いた図4に示すパーミアンス測定装置20
によって測定した。すなわち、磁界センサ1の貫通孔6
に測定試料30を挿入して、磁界センサ1からの誘起電
圧の測定値に基づいて測定試料30の透磁率を測定し
た。Next, Co 85 Zr 3 was used as the measurement sample 30.
Nb 12 thin film (diameter 6 mm, thickness 1 μm), formed in Ar atmosphere at 20 mTorr and 200 W, and heat treated in a rotating magnetic field (500 ° C., 2 hours, 60 rpm)
Then, heat treatment in a static magnetic field (500 ° C., 1 hour)
The permeance measuring device 20 shown in FIG.
Was measured by That is, the through hole 6 of the magnetic field sensor 1
Then, the magnetic permeability of the measurement sample 30 was measured based on the measured value of the induced voltage from the magnetic field sensor 1.
【0037】測定結果は図7に示す如くである。図7に
おいてμr’は透磁率の実部(一点鎖線)、μr”は透
磁率の虚部(実線)を示し、また図7において一点鎖線
および実線は実測値を示し、破線および二点鎖線は渦電
流と自然共鳴を考慮した計算値である。実測値と計算値
は良好に一致している。数100MHzにおいて実測値
と計算値が一致しない理由は磁性膜の異方性分散のため
であると考えられる。以上より透磁率は約1.5GHz
まで測定できている。The measurement results are as shown in FIG. In FIG. 7, μr ′ indicates the real part of magnetic permeability (dashed line), μr ″ indicates the imaginary part of magnetic permeability (solid line), and in FIG. This is a calculated value in consideration of eddy current and natural resonance.The measured value and the calculated value agree well.The reason that the measured value does not match the calculated value at several 100 MHz is due to the anisotropic dispersion of the magnetic film. From the above, the magnetic permeability is about 1.5 GHz.
It has been measured up to.
【0038】なお、図4に示す状態において、すなわち
磁界センサ1が励磁コイル21を形成する平板状伝送線
路22と平板状伝送線路23との間に挿入された状態に
おいて、さらに他の磁界センサ1を、励磁コイル21に
磁界センサ1とほぼ平行して挿入し、磁界センサ1の貫
通孔6に測定試料30を挿入し、前記他の磁界センサ1
には測定試料を挿入することなく、前記他の磁界センサ
1からの誘起電圧を校正用として用い、磁界センサ1か
らの誘起電圧と前記他の磁界センサ1からの誘起電圧と
に基づき測定試料30のパーミアンスを測定するように
してもよい。In the state shown in FIG. 4, that is, in a state where the magnetic field sensor 1 is inserted between the flat transmission line 22 and the flat transmission line 23 forming the exciting coil 21, the other magnetic field sensor 1 Is inserted into the excitation coil 21 almost in parallel with the magnetic field sensor 1, the measurement sample 30 is inserted into the through hole 6 of the magnetic field sensor 1, and the other magnetic field sensor 1
Without using the measurement sample inserted therein, the induced voltage from the other magnetic field sensor 1 is used for calibration, and the measurement sample 30 based on the induced voltage from the magnetic field sensor 1 and the induced voltage from the other magnetic field sensor 1 is used. May be measured.
【0039】前記他の磁界センサ1からの誘起電圧は高
周波磁界に基づく測定出力であって、パーミアンスの測
定において、磁界センサ1からの誘起電圧とバックグラ
ンドとしての前記他の磁界センサ1からの誘起電圧とに
基づいてパーミアンスの測定がなされる。このように2
個の磁界センサ1を用いそのうちの1個を校正用に使用
することによって、誘起電圧の測定回数が1個の磁界セ
ンサ1を用いる場合に比べ、実質的に1/2で済むこと
になる。The induced voltage from the other magnetic field sensor 1 is a measurement output based on a high-frequency magnetic field. In the measurement of permeance, the induced voltage from the magnetic field sensor 1 and the induced voltage from the other magnetic field sensor 1 as a background are measured. Permeance is measured based on the voltage. Thus 2
By using one magnetic field sensor 1 and using one of them for calibration, the number of times of measurement of the induced voltage can be substantially halved compared to the case where one magnetic field sensor 1 is used.
【0040】[0040]
【発明の効果】以上説明したように本発明にかかる磁界
センサによれば、ほぼC字状に形成され、かつ互いのC
字状の貫通部および切欠き部を一致させて相対向させた
一対の誘電体配線基板のそれぞれ外表面に接地導体を各
別に形成し、C字状の貫通部を挾んで切欠き部に対向す
る所定位置を始端位置とし、C字状の一方の半周部にお
ける所定位置を終端位置として、始端位置からC字状の
他方の半周部に沿い、切欠き部をわたって、C字状の一
方の半周部に沿って終端位置にまで一方の誘電体配線基
板の内表面にストリップ導体を形成し、かつ前記終端位
置においてそれぞれの接地導体とストリップ導体とを電
気的に接続し、それぞれの接地導体を電気的に接続し
て、電気的に接続された接地導体とストリップ導体の始
端位置との間の誘起電圧によって磁界を検出するように
したため、ストリップ導体により形成されるコイルに鎖
交する磁束の変化によってストリップ導体に誘起電圧が
発生し、この誘起電圧によって高周波磁界の検出ができ
るという効果がある。As described above, according to the magnetic field sensor of the present invention, the magnetic field sensors are formed substantially in the shape of a letter C, and
Ground conductors are separately formed on the outer surfaces of a pair of dielectric wiring boards in which the letter-shaped penetrating portions and the notch portions are aligned and opposed to each other, and face the notch portions with the C-shaped penetrating portions interposed therebetween. A predetermined position in one half of the C-shape as an end position, along the other half-periphery of the C-shape from the start-end position, and across the notch to form a C-shape. Forming a strip conductor on the inner surface of one of the dielectric wiring boards along a half-periphery of the ground conductor up to the terminal position, and electrically connecting the respective ground conductors and the strip conductor at the terminal position; Is electrically connected to detect the magnetic field by the induced voltage between the electrically connected ground conductor and the start position of the strip conductor, so that the magnetic flux linked to the coil formed by the strip conductor is To change Induced voltage is generated in the strip conductors I, there is an effect that can be detected in the high-frequency magnetic field by the induced voltage.
【0041】さらに本発明にかかる磁界センサによれ
ば、電界による誘起電圧が打ち消され、電界分布および
電界による誘起電圧の変化が抑制できて、主に磁界によ
る誘起電圧のみが取り出せるという効果がある。Further, the magnetic field sensor according to the present invention has the effect that the induced voltage due to the electric field is canceled out, the electric field distribution and the change in the induced voltage due to the electric field can be suppressed, and only the induced voltage mainly due to the magnetic field can be taken out.
【0042】また、本発明の磁界センサを用いて、磁性
薄膜のパーミアンスの測定が行える。The permeance of a magnetic thin film can be measured using the magnetic field sensor of the present invention.
【図1】本発明にかかる磁界センサの実施の一形態の構
成を示す斜視図である。FIG. 1 is a perspective view showing a configuration of an embodiment of a magnetic field sensor according to the present invention.
【図2】本発明にかかる磁界センサの実施の一形態の構
成を示す分解斜視図である。FIG. 2 is an exploded perspective view showing a configuration of an embodiment of a magnetic field sensor according to the present invention.
【図3】本発明にかかる磁界センサの実施の一形態にお
けるストリップ導体の特性インピーダンス特性図であ
る。FIG. 3 is a characteristic impedance characteristic diagram of a strip conductor in an embodiment of the magnetic field sensor according to the present invention.
【図4】本発明にかかる磁界センサを用いたパーミアン
ス測定装置の一部断面斜視図である。FIG. 4 is a partially sectional perspective view of a permeance measuring device using the magnetic field sensor according to the present invention.
【図5】本発明にかかる磁界センサの実施の一形態の誘
起電圧特性図である。FIG. 5 is an induced voltage characteristic diagram of one embodiment of the magnetic field sensor according to the present invention.
【図6】従来の磁界センサによる誘起電圧特性図であ
る。FIG. 6 is a diagram showing an induced voltage characteristic of a conventional magnetic field sensor.
【図7】本発明にかかる磁界センサの実施の一形態によ
るパーミアンスの測定結果を示す図である。FIG. 7 is a diagram showing a measurement result of permeance according to an embodiment of the magnetic field sensor according to the present invention.
【図8】従来の磁界センサの構成を示す斜視図である。FIG. 8 is a perspective view showing a configuration of a conventional magnetic field sensor.
1…磁界センサ 2−1、2−2…
誘電体配線基板 3−1、3−2…接地導体 4…ストリップ導
体 5…同軸ケーブル P…始端位置 E…終端位置 20…パーミアン
ス測定装置 21…励磁コイル 24…終端抵抗1. Magnetic field sensor 2-1, 2-2 ...
Dielectric wiring board 3-1, 3-2 ... ground conductor 4 ... strip conductor 5 ... coaxial cable P ... start end position E ... end position 20 ... permeance measuring device 21 ... excitation coil 24 ... termination resistance
Claims (5)
部に連通させる切欠き部が設けられ、互いの貫通孔と切
欠き部を一致させて相対向して積層させる一対の誘電体
配線基板のそれぞれの外表面に接地導体を各別に形成
し、 貫通孔を挾んで切欠き部に対向する所定位置を始端位置
とし、C字状の一方の半周部における所定位置を終端位
置として、始端位置からC字状の他方の半周部に沿い、
切欠き部をわたって、C字状の一方の半周部に沿って終
端位置にまで一方の誘電体配線基板の内表面にストリッ
プ導体を形成し、 前記終端位置においてそれぞれの接地導体とストリップ
導体とを電気的に接続し、 それぞれの接地導体を電気的に接続して構成し、 電気的に接続された接地導体とストリップ導体の始端位
置との間の誘起電圧を磁界検出出力とすることを特徴と
する磁界センサ。A through hole is provided at substantially the center, a notch is provided to communicate the through hole to the outside, and a pair of dielectrics are stacked so that the through hole and the notch coincide with each other and face each other. A ground conductor is separately formed on each outer surface of the wiring board, a predetermined position facing the notch across the through hole is defined as a start position, and a predetermined position in one half of the C-shaped half is defined as an end position. Along the other half of the C-shape from the starting position,
A strip conductor is formed on the inner surface of one of the dielectric wiring boards across the notch portion and along one of the C-shaped half-peripheries up to the termination position, and a ground conductor and a strip conductor are formed at the termination position. Are electrically connected to each other, each ground conductor is electrically connected, and the induced voltage between the electrically connected ground conductor and the starting position of the strip conductor is used as a magnetic field detection output. Magnetic field sensor.
0Ωに設定してあることを特徴とする請求項1記載の磁
界センサ。2. The characteristic impedance of a strip conductor is 5
2. The magnetic field sensor according to claim 1, wherein the magnetic field sensor is set to 0Ω.
されかつ特性インピーダンス50Ωの終端抵抗によって
終端された励磁コイルに通電して発生させたほぼ一様な
高周波磁界内に挿入されて、接地導体とストリップ導体
との間の誘起電圧に基づき、貫通孔に挿入される磁性薄
膜のパーミアンスを測定することを特徴とする請求項1
記載の磁界センサ。3. An earth coil inserted into a substantially uniform high-frequency magnetic field generated by energizing an exciting coil formed of a pair of parallel transmission lines facing each other and terminated by a terminating resistor having a characteristic impedance of 50Ω. 2. The permeance of a magnetic thin film inserted into a through hole is measured based on an induced voltage between a conductor and a strip conductor.
A magnetic field sensor as described.
路は特性インピーダンスを50Ωに設定してあることを
特徴とする請求項3記載の磁界センサ。4. The magnetic field sensor according to claim 3, wherein the pair of parallel transmission lines forming the exciting coil have a characteristic impedance set to 50Ω.
されかつ特性インピーダンス50Ωの終端抵抗によって
終端された励磁コイルに通電して発生させたほぼ一様な
高周波磁界内に2個挿入されて、貫通孔に磁性薄膜が挿
入された状態における一方の磁界センサの接地導体とス
トリップ導体との間の誘起電圧と、貫通孔に磁性薄膜無
挿入の状態における他方の磁界センサの接地導体とスト
リップ導体との間の誘起電圧とに基づいて磁性薄膜のパ
ーミアンスを測定することを特徴とする請求項1記載の
磁界センサ。5. Two substantially parallel high-frequency magnetic fields generated by energizing an exciting coil formed of a pair of parallel transmission lines facing each other and terminated by a terminating resistor having a characteristic impedance of 50Ω are inserted. The induced voltage between the ground conductor and the strip conductor of one magnetic field sensor when the magnetic thin film is inserted into the through hole, and the ground conductor and the strip conductor of the other magnetic field sensor when the magnetic thin film is not inserted into the through hole. The magnetic field sensor according to claim 1, wherein the permeance of the magnetic thin film is measured based on an induced voltage between the magnetic field and the magnetic field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08236775A JP3085651B2 (en) | 1996-09-06 | 1996-09-06 | Magnetic field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08236775A JP3085651B2 (en) | 1996-09-06 | 1996-09-06 | Magnetic field sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1082845A JPH1082845A (en) | 1998-03-31 |
| JP3085651B2 true JP3085651B2 (en) | 2000-09-11 |
Family
ID=17005617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08236775A Expired - Fee Related JP3085651B2 (en) | 1996-09-06 | 1996-09-06 | Magnetic field sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3085651B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6856131B2 (en) | 2002-08-01 | 2005-02-15 | Ryowa Electronics Co., Ltd. | Magnetic sensor, side-opened TEM cell, and apparatus using such magnetic sensor and side-opened TEM cell |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4318820B2 (en) * | 1999-12-09 | 2009-08-26 | 株式会社日本自動車部品総合研究所 | Magnetic detection antenna |
| WO2004068152A1 (en) * | 2003-01-31 | 2004-08-12 | Commissariat Energie Atomique | Device for sensing rf field |
| WO2005096007A1 (en) | 2004-03-31 | 2005-10-13 | Nec Corporation | Magnetic field sensor |
| JP5831085B2 (en) * | 2011-09-21 | 2015-12-09 | 富士通株式会社 | Magnetic field measuring device |
| JP7162344B2 (en) * | 2019-03-27 | 2022-10-28 | 国立研究開発法人産業技術総合研究所 | Magnetic permeability measuring jig, magnetic permeability measuring device and magnetic permeability measuring method |
| JP6853441B2 (en) * | 2019-04-24 | 2021-03-31 | 健二 飯島 | Magnetic sensor element, magnetic detector, motor with magnetic sensor element and device with magnetic detector |
| JP7258349B2 (en) * | 2019-09-09 | 2023-04-17 | 国立研究開発法人産業技術総合研究所 | Magnetic permeability measuring jig, magnetic permeability measuring device and magnetic permeability measuring method |
| EP4141456B1 (en) | 2020-10-23 | 2025-12-03 | Tohoku University | Measurement device and measurement method for measuring magnetic permeability and dielectric constant |
-
1996
- 1996-09-06 JP JP08236775A patent/JP3085651B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6856131B2 (en) | 2002-08-01 | 2005-02-15 | Ryowa Electronics Co., Ltd. | Magnetic sensor, side-opened TEM cell, and apparatus using such magnetic sensor and side-opened TEM cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1082845A (en) | 1998-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Pain et al. | An improved permeameter for thin film measurements up to 6 GHz | |
| US4725779A (en) | NMR local coil with improved decoupling | |
| EP1991862B1 (en) | Method and device for non destructive evaluation of defects in a metallic object | |
| JP3085651B2 (en) | Magnetic field sensor | |
| US20090243603A1 (en) | Device for Measuring Magnetic Particles and Corresponding Method | |
| US12474299B2 (en) | Measurement device and measurement method for measuring permeability and permittivity | |
| Salahun et al. | A broadband permeameter for" in situ" measurements of rectangular samples | |
| US20130134964A1 (en) | Coil comprising a winding comprising a multi-axial cable | |
| JP2012032165A (en) | Apparatus and method for measuring permeability of magnetic substance | |
| Yabukami et al. | Noise analysis of a 1 MHz-3 GHz magnetic thin film permeance meter | |
| Babitskii et al. | A magnetometer of weak quasi-stationary and high-frequency fields on resonator microstrip transducers with thin magnetic fields | |
| JP2019078563A (en) | Directional coupler | |
| US5701073A (en) | Direct current measuring apparatus and method employing flux diversion | |
| JPH06100629B2 (en) | Magnetic field measurement probe | |
| US9568568B2 (en) | Apparatus and method of measuring permeability of a sample across which a DC voltage is being applied | |
| US5115197A (en) | Fluxgate sensor having adjustable core extending beyond a coil winding and a gradiometer incorporating a pair of sensors | |
| JP7313932B2 (en) | Magnetic sensors and magnetic sensor modules | |
| JPH07104044A (en) | Magnetic permeability measuring device | |
| JP2005055326A (en) | Conductor current measurement method and magnetic field sensor for measuring conductor current | |
| AU753651B2 (en) | Induction sensor | |
| JP2001228227A (en) | Magnetic field measurement device | |
| Abalkhail et al. | Split-Ring Resonator Excited by a U-Shaped Transmission Line for Material Characterization | |
| RU2829013C1 (en) | Small-sized broadband sensor of weak magnetic fields | |
| Delooze et al. | AC biased sub-nano-tesla magnetic field sensor for low-frequency applications utilizing magnetoimpedance in multilayer films | |
| US20250290879A1 (en) | Sensor element, test device, and method for testing a data carrier having a spin resonance feature |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090707 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090707 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100707 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100707 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110707 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110707 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120707 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130707 Year of fee payment: 13 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |