JP3088907B2 - Solid capacitor and its manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of solid-state capacitors, and more particularly to a method of mass-producing surface mountable solid-state capacitors and finished capacitors.

[0002]

BACKGROUND OF THE INVENTION As used herein, the term solid capacitor is used to provide a powder assembly of molded solid capacitor metal (as described below), compress the powder assembly into a predetermined shape, The powder block is sintered and integrated into a single porous body and subjected to a chemical reaction, for example, an oxide film treatment of the porous block to provide a dielectric coating covering the metal surface, and further cover the dielectric coating. It means a capacitor manufactured by a method of forming a conductive coating (manganizing treatment).

In a solid capacitor, the metal component treated with the oxide film becomes the anode of the capacitor, and the conductive coating or manganizing coating that covers the dielectric constitutes the cathode or counter electrode.

[0004] As used herein, the term solid formed metal refers to metals suitable for the manufacture of solid capacitors.
The solid metal includes one or more metals selected from tantalum, niobium, molybdenum, silicon, aluminum, titanium, tungsten, zirconium, and alloys thereof. The main solid metals used today are tantalum and small amounts of niobium.

[0005] The term oxide film treatment used in the present application refers to, for example, immersing a sintered metal in an electrolytic solution, that is, a phosphoric acid solution, and connecting the metal immersed in the solution bath as a cathode to a positive power source of DC current. This means that a dielectric coating is applied to the surface of the sponge-like metal constituting the sintered porous block of solid metal.

[0006] The general meaning of the term manganizing process refers to the application of a conductive counter electrode coating to a dielectric created by an oxide coating process. In the manganizing treatment step, for example, the apparatus subjected to the oxide film treatment is immersed in a solution of manganese nitrate, and the apparatus saturated with the solution is heated in a humid atmosphere to change the nitrate into solid conductive manganese dioxide. .

Although these oxide film treatment steps and manganizing treatment steps are well known in the art of manufacturing solid capacitors, they may be changed according to the solid metal used and the product characteristics required for the capacitors.

[0008] Solid capacitors have the advantage of providing a very large capacitance in a relatively small volume space due to the large surface area of the metal in the sintered porous block. For example, a tantalum capacitor having a capacitor body volume of 0.027 cc and a value of 50-100 MFD at an operating voltage of about 10 volts can be provided.

[0009]

In the conventional encapsulation method, the size is inevitably increased, so that it is not possible to reduce the size. In particular, the inventive step of the present invention can be correctly evaluated in comparison with a conventional method of manufacturing a solid capacitor that has been commercially available.

[0010] According to such a conventional manufacturing method, a compressed block of tantalum powder is applied to the end of the tantalum metal rod. The rod and the powder block are joined by sintering the rod and the tantalum powder block together or by welding the rod to a pre-sintered powder block. After that, the oxide film processing and the manganizing processing are performed on the unit manufactured in advance. These tasks are, for example,
This is done by grabbing the tantalum rod and using this rod as a "handle" for subsequent steps.

The capacitor mount must be packaged for use in various commercial applications.
Because the joint between the anode rod and the tantalum block is easily damaged, it is necessary, for example, to encapsulate the capacitor in a leadframe structure having terminals attached to a PC board or the like. According to a typical leadframe mounting method, the cathode is connected to the capacitor body, the anode rod and the rest of the leadframe are welded, the device is encapsulated and connected to the leadframe, and the leadframe protrusions And the other parts are disconnected to obtain a capacitor product.

As is well known to those skilled in the art, the above-described conventional solid capacitor manufacturing technology has many problems associated with manufacturing, and the size of a capacitor package product depends on the actual volume of the capacitance generating element. Doubled. As described above, the connection between the anode rod and the capacitor body is fragile, and the oxide film treatment, the manganizing treatment, and the processing of the capacitor in the subsequent steps require careful attention. Also, the welding of solid metals required for conventional manufacturing methods is a difficult task.

In the above-mentioned conventional method, strict control is required so that the cathode coating does not short-circuit to the anode rod, and since the distance between these components needs to be increased, the total length of the components is further increased.

Last but not least, most importantly,
In addition to the high cost of assembling the lead frame, the space occupied by the capacitor product is large, which goes against current manufacturing technology that is valued for miniaturization.

A typical example of a conventional solid tantalum capacitor and a method of manufacturing the same is disclosed in US Pat. Nos. 4,059,887 and 4,520,464.
No. 30, No. 4,780,796 and No. 4,945,452.

Representative examples of solid capacitors manufactured by the lead frame method include US Pat. No. 4,107,762 and US Pat.
Nos. 39,623, 4,660,127, 4,899,258 and
There is 4,907,131.

The following list is an excerpt from a technical survey conducted on the present invention. U.S. Pat.No. 3,117,365 teaches depositing a U-shaped electrode pattern on a large sheet of dielectric, stacking the sheets, exposing the base of the U-shaped pattern from the opposite surface of the laminated sheet, cutting and individually A ceramic capacitor manufactured by forming a capacitor and terminating the same is disclosed.

US Pat. No. 3,538,571 discloses embossing a green ceramic sheet to form a raised compartment that is later turned into an electrode.

US Pat. No. 3,617,834 discloses a ceramic multilayer capacitor in which the edges of a capacitor block are overlapped, and the block is cut at the overlap to form a terminal portion.

US Pat. No. 3,635,759 discloses that a ceramic mixed with a binder is passed through a porous screen and a negative pressure is applied thereto.
It discloses a method of manufacturing a multilayer ceramic capacitor, in which this operation is repeated until a multilayer structure is formed in which a liquid metal is deposited, then baked and then cut and processed into individual capacitors.

US Pat. No. 3,992,761 discloses a method of fabricating a capacitor terminal by exposing a plurality of ceramic capacitors with their ends exposed and embedded in a plastic block. The end of the exposed end is processed, and then the plastic block is melted, and the capacitor body is taken out of the block.

No. 4,045,867 discloses that a terminal wire is passed upward through a hole formed in the bottom of a plastic preform, the wire is attached to a capacitor, the capacitor is incorporated into the preform, and the preform is filled with resin. And solidifying the polymer compound on a capacitor.

US Pat. No. 4,574,438 discloses forming a metal layer on a substrate, forming a piezoelectric dielectric layer on the metal, cutting a groove in the substrate body through the piezoelectric dielectric layer and the metal layer, And a pressure-sensitive transducer manufactured by forming a photolithographic spacer over the device part so as to coincide with the filling groove, and installing a cover with electrodes at right angles to the groove.

US Pat. No. 4,959,652 teaches winding individual capacitors, depositing and terminating the terminals with a metal having a higher melting point than the solder used to attach the capacitors to the PC board, and coating the capacitors with resin. ,
1 illustrates a technique of manufacturing a metal-coated plastic type surface mount capacitor manufactured by cutting off a part of a resin to expose a desired portion of an underlying metal terminal material.

[0025]

SUMMARY OF THE INVENTION The present invention, in summary, relates to an improved method of simultaneously fabricating a large number of surface mountable solid state capacitors, and to an improved capacitor made by this method. . Briefly, the method includes providing a metal substrate of the same or compatible metal as the solid metal from which the capacitor is fabricated. A wafer made by compressing powdered solid metal is placed on a substrate. The size of this wafer is many times the size of the capacitor product. The wafer and substrate are sintered together, the wafer is bonded to the substrate, and the powder is integrated to form a porous block.

The sintered wafer is divided into a number of subunits by cuts made at right angles to the substrate through the wafer. At any time before or after the division of the subunit, the oxide film treatment and the manganizing treatment of the wafer and / or the divided subunit are performed. When the oxide film processing and the manganizing processing are performed before the division into subunits, the oxide film processing and the manganizing processing are performed again after the subunit division. The area between the divided subunits is preferably treated by resin injection, the interface between the substrate and the wafer is insulated from the rest of the wafer, and the anode of the device is formed with the cathode of the capacitor.

On the upper surface of the processed wafer, a metal coating member is provided by mechanically and electrically bonding to the upper surface to form a counter electrode. The gap between each capacitor formed by the cutting process performed in advance is filled with resin injected into this space, using the space created between the base material and the counter electrode plate as a mold element, and cut. The insulating resin material blocks all the spaces formed by the portions.

Finally, if the composite is cut along a cutting line that matches the cuts already formed, ie, the cutting line that passes through the counter electrode plate, the resin that separates the individual capacitors, and the substrate, the counter electrode plate is cut. Then, a capacitor product already encapsulated except for the end of the base material is completed. The counter electrode plate and the end element of the substrate form a terminal for capacitor installation when surface mounted on a PC board. The substrate forms the anode of the capacitor, and the counter electrode forms the cathode.

It will be apparent to those skilled in the art and to those familiar with conventional solid capacitors and their methods of manufacture that the above described method of the present invention provides numerous advantages.
First, omitting the conventional anode wire increases the volumetric efficiency of the capacitor, ie, the capacitance obtained from a unit of fixed volume, from a factor of two to three.

In addition, major manufacturing difficulties such as the use of anode wires to handle preforms, welding anode wires, and using lead frames have been completely eliminated. Furthermore, the method of the present invention also eliminates the practically significant problem of short-circuiting the circuit between the anode wire of a conventional solid capacitor and the cathode coating over the capacitor.

An important advantage of the present invention is that the base material with the sintered solid metal wafer bonded to the base material can be managed as a stock product. By using this stock product, it is possible to easily manufacture a capacitor having a desired capacitance by changing the interval between cut portions formed on the wafer, that is, changing the capacitor size.

What is important is that the encapsulation cost is greatly reduced by using the counter electrode plate and the base material to form the contour of the mold for injecting the insulating resin. The insulating resin partitions the individual capacitors and is later sawed to form the finished capsule of the capacitor product.

Accordingly, it is an object of the present invention to provide a novel method for mass producing surface mountable solid state capacitors and an improved capacitor made by this method.

It is another object of the present invention that the components of the encapsulant of the capacitor product be manufactured during the manufacture of the capacitor.
It is an object of the present invention to provide a method of manufacturing a surface mountable solid-state capacitor which functions to insulate an anode substrate from a portion which will later be a counter electrode component.

Still another object of the present invention is to eliminate a fragile connection between an anode rod and a tantalum block and between an anode rod and a terminal component, and to provide a solid having a durable and reliable structure. An object of the present invention is to provide a method of manufacturing a capacitor and a capacitor manufactured by the method. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0036]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 to FIG. 9 are sectional views showing stepwise successive manufacturing steps of the capacitor according to the first embodiment of the present invention. The dimensions and shapes of the components have been exaggerated for clarity, as will be apparent to those skilled in the art.

FIG. 1 shows a solid metal substrate 10. This solid metal is, for example, tantalum. In a preferred embodiment, a thin layer of tantalum particles 12 is deposited on upper surface 11 of substrate 10. The tantalum particles 12 fuse to the substrate and form a rough surface as described below,
It functions to increase the adhesive strength of the wafer 13. Particle 1
Instead of 2, the surface 11 itself may be roughened.

On the upper surface 11 of the base material 10 is placed a wafer 13 which is obtained by mixing tantalum powder with a binder and consolidating it. As is well known, the powder molded wafer 1
The particle size range of the particles forming 3 can be selected, and the particle size of such particles determines the characteristic value of the capacitor product. Thereafter, the wafer 13 and the base material 10 are subjected to a sintering process for first burning off the organic binder and changing the powder of the wafer 13 into an integrated porous block. This sintering bonds the lower surface 14 of the wafer and the upper surface 11 of the substrate 10 and mechanically and electrically connects these contact surfaces.

The thickness of the substrate shown is for convenience of explanation and is not intended to be limiting. Substrate thickness is 0.00
5 inches (0.127 mm) to 0.03 inches (0.
762 mm). Although particles having a larger particle diameter than the powder of the wafer are used for the scattered powder 12, the particle diameter can be adjusted to the particle diameter used for the wafer 13. In the illustrated example, the ideal range for powder 12 is about 100 microns to 800 microns.

When the substrate and the powder are made of tantalum, for example, a method of sintering at 2000 degrees Celsius for 5 minutes to 60 minutes is effective in obtaining desired adhesiveness and porosity.
The time factor is related to the particle size and the degree of integration of the material forming the wafer. All methods for manufacturing solid capacitors consist of a metal forming process including a pellet forming process, a sintering process, and subsequent processing steps (oxide film treatment and manganizing process) necessary for processing a porous block into a capacitor. Since this is a well-known technique and such a manufacturing process does not form a main part of the present invention, the description will be simplified.

As shown in FIG. 3, the substrate 10 and the sintering-processed wafer 13 are sent to a sawing step, and are cut at right angles in a cross-shaped pattern on the surface of the substrate 10 so that a large number of independent wafers 13 are formed. Of the capacitor forming unit 15. The cutting is preferably performed to a depth at which the surface 11 of the base material 10 is exposed, or may be performed so that the surface is slightly cut. If necessary, the substrate is buried in a resin block (not shown) at a depth such that the upper surface of the substrate and the wafer are exposed, for convenience of handling the composite comprising the substrate 10 and the wafer 13. Can be kept.

The finely divided composite product shown in FIG. 3 and FIG. 10 is then sent to a processing step for processing into a capacitor in the form of a porous sintered block wafer after the sawing step. This step is a well-known oxide film processing step. In the oxide film treatment step, the wafer is immersed in an electrolytic solution bath, that is, immersed in a 0.1% phosphoric acid solution, and the base material immersed in the bath is used as a cathode and connected to a positive power source of DC current. This process converts the exposed portions of the wafer and substrate to the dielectric material when exposed to the solution. In the example shown, the metal tantalum used is changed to tantalum pentoxide.

In a subsequent capacitor manufacturing process, a counter electrode is manufactured. In this counter electrode fabrication process,
For example, immersing the composite product in a solution of manganese nitrate,
The apparatus is heated to about 325 degrees Celsius in a humid atmosphere to convert phosphoric acid to conductive manganese dioxide. The oxide film treatment and the manganizing treatment are repeated many times until a desired dielectric is formed and the covering of the counter electrode is completed. Such repetitive processing is necessary because heating during fabrication of the counter electrode causes breakage or tearing of the dielectric. An oxide film treatment is performed again for this breakage or tear, so that a short circuit does not occur between the anode (formed by tantalum metal) and the cathode, that is, the counter electrode (formed by manganizing treatment). .

The process of processing a porous block of tantalum to make a capacitor is described in US Pat. Nos. 4,059,887 and 4,945,452. Here, the U.S. patent number is quoted to replace the description of the content.

As shown in FIG. 4, the second series of saw sections S2 is formed in alignment with the first series of saw sections S1. The saw cutting portion S2 is cut deep into the base material to form the channel 16. In this context, the setup of the oxide film treatment and the manganizing treatment of the wafer material is a matter of choice in the present invention. For example, the saw cutting portions S1 and S2 may be formed after the oxide film treatment and the manganizing treatment of the entire wafer 13 are completed, or these processes may be performed on the wafer after the saw cutting portion is formed. . As a matter of course, when cutting is performed after performing the oxide film treatment, it is necessary to again apply the oxide film treatment and the manganizing treatment to the sawn composite. The order of processing is best obtained by trial and error and can be varied according to the size of the individual capacitors, the state (particle size) of the selected solid metal powder and other factors of the prior art.

As shown in FIG. 5, the channel 16 is filled with the resin insulating composition 17 up to the level of the surface 11 or a position slightly higher than the surface. The most desirable resin is a liquid epoxy resin, but various liquid resins that cure later can be used.

As a preferable method, the second saw cutting portion S
After the formation of 2, the device is subjected to an oxide film treatment before the channel is filled, and the metal exposed by the saw cutting portion S2 is covered with the oxide film treated insulating layer.

As is apparent from the following description, the resin 17
(And subsequent saw cutting / oxide film treatment steps)
The electrical connection between the metal components of the sintered tantalum powder molded wafer 13 is made at the surface 11 bounding the individual capacitor forming members 15 and the substrate.

As shown in FIG. 6, a first layer 19 of conductive carbon and a coating layer 20 of silver are provided on the upper surface 18 of the component 15 in the same manner as in the prior art. The outer (upper) surface of the formed counter electrode is electrically connected.

As shown in FIG. 7, the cathode plate 21 is fixed, that is, the silver coating 20 is formed by a conductive adhesive.
Is adhered and fixed to the upper surface 22. After the adhesive is hardened, the gap 23 of the saw cutting portion S1 provided first is filled with a liquid insulating resin material (for example, epoxy resin) and solidified. Since the base material 10 and the cathode plate 21 form cells that confine the injected resin, the filling of the resin can be performed relatively easily.

Finally, the composite unit shown in FIG.
Cutting is performed along the saw cutting portion S3 corresponding to the saw cutting portions S1 and S2, and through this cutting step, a capacitor product having a structure as shown in FIG. 11 is obtained.

As is clear from the above, there is no need to perform a new processing or encapsulation. As long as the saw cutting portion S3 is inserted, an encapsulated solid capacitor product can be obtained. The capacitor can be surface mounted.
The anode 10 ′ is composed of a segment of the substrate 10, and the cathode, that is, the counter electrode 21 ′ is composed of a retrofit part of the cathode plate 21.

An important advantage of the present invention is that the substrate and wafer 1
That is, a semi-finished product of the storage size 3 (FIG. 2) can be manufactured. Simply changing the spacing of the saw cuts can produce capacitors with different product characteristics to meet individual user requirements.

Although the present invention is not intended to be limited and can be changed in accordance with the best system conditions, a preferred manufacturing procedure for implementing the method of FIGS. 1 to 9 will be described below. Production order 1. Prepare a tantalum substrate. 2. The tantalum particles are deposited and heated to adhere the particles to the substrate. 3. A tantalum wafer is placed, and the wafer is sintered to integrate the powder, adhere to a substrate, and then treated with an oxide film. 4. Manganizing process. 5. The wafer is sawed (S1). 6. A dielectric layer is formed to cover the saw. 7. A first resin barrier (17) is provided. 8. Manganizing process. 9. Apply carbon coating. 10. Apply silver coating. 11. The cathode plate is bonded using a conductive adhesive. 12. Encapsulation is performed by injecting a second resin (24). 13. The wafer is cut and divided into individual capacitors.

FIGS. 12 to 20 show an improvement of the method shown in FIGS. 1 to 9. The main difference between these methods is that the first resin injection step for adding the resin component 17 is omitted. In the description of the manufacturing process shown in FIG. 12 to FIG.
Are given the same reference numerals as used in the description.

According to this embodiment (FIGS. 12 to 20), after forming the first saw cut (S1), a dielectric coating 30 is applied to the exposed surface of the capacitor accessory 15 and the substrate 10. Applied to shield the metal components exposed by sawing, resulting in an insulating barrier that protects the interface between the substrate and the base of the member 15. afterwards,
The apparatus is subjected to a manganizing process, and is further aligned with the saw cutting section S1 to form a second series of narrow saw cutting sections (S
2) is formed. At the end of this operation, the composite is sent further to a dielectric formation step where the edges exposed by the saw cut S2 are sealed with a dielectric coating (FIG. 17). Next, the complex is subjected to a manganizing process to form a counter electrode, which is subjected to a preliminary process, that is, a process of attaching a carbon layer 19 and a silver layer 20 and further attaching a cathode plate 21. Capacitor member 1
5 is closed with the resin insulator 24, and the saw cutting portion S3 is formed.
Cut along the line to obtain a capacitor product 2 as shown in FIG.
5 is manufactured.

As in the method shown in FIGS. 1 to 9,
The order of the steps can be varied to some extent. With respect to the examples of FIGS. 12 to 20, the preferred procedure is as follows. Manufacturing sequence (FIGS. 12 to 20) Rough finish the substrate or attach sintered metal particles. 2. The wafer is placed on the substrate, and the wafer and the substrate are sintered together. 3. Form a dielectric. 4. The saw is cut to the level of the substrate (S1). 5. Further, a dielectric is formed, and the exposed metal is sealed with a saw. 6. Perform a manganizing process. 7. A deep cut (S2) is formed in the substrate. 8. The inside of the groove generated in the process of forming the saw cut portion (S2) is again subjected to an oxide film treatment to form a dielectric. 9. Perform a manganizing process. 10. Deposit carbon and silver on the upper edge of the capacitor. 11. The cathode plate is attached to the silver surface using a conductive adhesive. 12. Inject resin. 13. The individual capacitors are separated by the saw cutting portion (S3).

As is apparent from the above description, the present specification discloses a novel method for manufacturing a solid capacitor. What is common to these methods of the present invention is that a large number of solid capacitors can be obtained between the cathode plate and the anode plate and separated by voids. The void is filled with an insulating encapsulation resin. After complete fabrication of the capacitors and the encapsulation process, the individual capacitors are cut from the matrix. Through this re-saw cutting step, a surface-mounted capacitor that is encapsulated and terminal-processed is obtained. The cut edge of the substrate forms the anode terminal, and the edge of the cathode plate forms the counter electrode or the cathode terminal.

The package volume of the capacitor obtained by implementing this method is about one third of the volume of the conventional solid capacitor.
And a very efficient use of space is possible. In the conventional capacitor, a defect is apt to occur due to the anode rod dropping off from the sintered pellet and disconnection of the anode rod connection to the terminal. However, according to the capacitor of the present invention, such a defect hardly occurs.

According to the manufacturing method of the present invention, in addition to the resin component functioning as an encapsulating material for a capacitor product, an insulator for insulating the anode from the counter electrode is formed (first method). It also serves as a means to facilitate According to the above two specific methods, it is possible to enhance the synthesis of the matrix during the final sawing operation.

Those skilled in the art and those familiar with the description herein may vary in the details of construction and in the methodology of implementation without departing from the spirit of the invention. Therefore, the present invention needs to be interpreted in a broad sense based on the claims.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a surface processing state of a substrate in a method for manufacturing a capacitor according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing a state where a wafer is bonded on a base material.

FIG. 3 is a schematic cross-sectional view showing a state where a saw cutting portion S1 is formed on a wafer.

FIG. 4 shows a saw cutting portion S on a base material in alignment with the saw cutting portion S1.
FIG. 2 is a schematic cross-sectional view showing a state where No. 2 is formed.

FIG. 5 is a schematic cross-sectional view showing a state in which a saw cut portion S2 is filled with a resin barrier.

FIG. 6 is a schematic sectional view showing a state where carbon coating and silver coating are applied.

FIG. 7 is a schematic sectional view showing a state where a cathode plate is installed.

FIG. 8 is a schematic cross-sectional view showing a state in which a resin is filled in a gap of the saw cutting portion S1.

FIG. 9 is a schematic sectional view showing a cutting position of a wafer and a base material.

FIG. 10 is a perspective view showing the composite in the course of manufacture at the stage shown in FIG. 3;

FIG. 11 is an enlarged perspective view of a part of the capacitor product manufactured by the method of FIGS. 1 to 9;

FIG. 12 is a schematic sectional view showing a surface processing state of a base material in a method of manufacturing a capacitor according to a modification of the present invention.

FIG. 13 is a schematic cross-sectional view showing a state where a wafer is bonded to a base material.

FIG. 14 is a schematic cross-sectional view showing a state where a saw cutting portion S1 is formed on a wafer.

FIG. 15 is a schematic sectional view showing a state where a dielectric coating is applied to an exposed surface.

FIG. 16 is a schematic cross-sectional view showing a state in which the sawing portion S2 is formed on the base material in alignment with the sawing portion S1.

FIG. 17 is a schematic cross-sectional view showing a state where an edge exposed by the saw cutting portion S2 is covered with a dielectric coating.

FIG. 18 is a schematic cross-sectional view showing a state where a carbon coating, a silver coating, and a cathode plate are installed.

FIG. 19 is a schematic cross-sectional view showing a state in which a resin is filled in gaps between the saw cutting portions S1 and S2.

FIG. 20 is a schematic sectional view showing a cutting position of a wafer and a base material.

FIG. 21 is an enlarged perspective view showing a part of the capacitor product manufactured by the method shown in FIGS. 12 to 20;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Substrate 11 Upper surface of substrate 12 Tantalum particle 13 Wafer 14 Lower surface of wafer 15 Capacitor forming unit 16 Channel 17 Resin insulating composition 18 Upper surface 19 Carbon coating 20 Silver coating 21 Cathode plate 22 Upper surface of silver coating 23 Void S1 First saw cutting part S2 Second saw cutting part

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01G 9/00 H01G 9/004 H01G 9/052 H01G 9/08

Claims (20)

(57) [Claims] 1. A method for simultaneously fabricating a number of solid capacitors, comprising: providing a metal substrate;
Mounting a wafer made of a powdered solid capacitor molded metal having a lower surface engaged with the substrate and an upper surface parallel to the substrate and spaced from the substrate; and Sintering the substrate to adhere the lower surface of the wafer to the substrate, and solidifying the powder of the wafer into a porous block;
Dividing the wafer into a plurality of separation units by forming a series of cuts; sending the wafer to an oxide coating process to form a dielectric coating on the entire porous block; and Forming a conductive counter electrode coating covering the upper surface; electrically and mechanically joining a metal member to the counter electrode coating on the upper surface in parallel with the substrate; and Injecting an insulating material between the members to substantially fill the voids between the separation units of the wafer formed by the first series of cuts, and then parallel to the first series of cuts. And forming a second series of cuts through said metal member, insulating material and substrate in alignment with said cuts. A method of fabricating. 2. A surface mountable solid state capacitor manufactured by the method of claim 1. 3. The method of claim 1, wherein the first series of cuts are provided in the substrate to a depth at which a channel is created, and the method includes forming the counter electrode coating before forming the counter electrode coating. Filling the channel with an insulating material at least to the level of the surface of the substrate. 4. A surface mountable solid state capacitor manufactured by the method of claim 3 . 5. The method of claim 1, wherein the method further comprises, prior to loading the wafer, adding the additional particles of the solid metal having a particle size greater than a particle size of the wafer powder. A method of simultaneously fabricating a number of solid capacitors comprising the step of welding to a material. 6. A surface mountable solid state capacitor manufactured by the method of claim 5 . 7. The method according to claim 1, wherein a plurality of solid capacitors are formed at the same time, wherein the solid capacitor forming metal is made of tantalum. 8. A surface mountable solid state capacitor manufactured by the method of claim 7 . 9. The method according to claim 7 , wherein a plurality of solid capacitors are formed simultaneously, wherein at least the uppermost surface of the substrate is made of tantalum. 10. A surface mountable solid state capacitor manufactured by the method of claim 9 . 11. A method for simultaneously fabricating a number of surface mountable solid capacitors, providing a flat metal substrate having an upper surface, and a lower surface engaging the upper surface of the substrate. Mounting a wafer of powdered solid capacitor molding material having a top surface parallel to the surface and the substrate and spaced from the substrate, and sintering the wafer and the substrate together Adhering the wafer to the substrate and consolidating the powder into a porous block, a first through the wafer along a plane perpendicular to the substrate and at least reaching the level of the upper surface.
Dividing the sintered wafer into a plurality of separation sub-units by forming a series of cuts in the first
A second series of cuts that are narrower than the first series of cuts and extend below the upper surface of the substrate to form channels in the substrate, consistent with the series of cuts Forming a portion, filling the channel with a first insulating resin body, and then subjecting the subunit to an oxide film process and a manganizing process in order to have a counter electrode exposed on the upper surface. forming a solid capacitor, conducting the steps of the cathode plate are electrically and mechanically bonded to the upper surface, the void space between said first set of said substrate and a cathode plate made by the disconnect unit Filling with an insulating material, and then forming a third series of cuts through the cathode plate, the resin body, the insulating material and the substrate in alignment with the second series of cuts. Multiple solids with A method of fabricating a capacitor at the same time. 12. A surface mountable solid state capacitor manufactured by the method of claim 11 . 13. The method of claim 11 , wherein additional particles of the solid metal having a particle size larger than the particle size of the powder are placed on the upper surface of the substrate, and mounting the wafer. Depositing the additional particles on the upper surface prior to forming the plurality of solid capacitors simultaneously. 14. A surface mountable solid state capacitor manufactured by the method of claim 13 . 15. The method of claim 13 , wherein a plurality of solid-state capacitors wherein the solid-state metal is tantalum. 16. A surface mountable solid state capacitor manufactured by the method of claim 15 . 17. A method of making a surface mountable solid state capacitor encapsulated and terminated, comprising a metal anode plate and a cathode plate, wherein a number of solid capacitors are disposed between the plates. The channels are spaced from one another to form channels between the capacitors, and are welded to the anode plate to form a first surface thereof.
The anode terminal and the cathode plate are electrically and mechanically adhered to the cathode plate so as to face the first surface.
Preparing a preformed body having a cathode terminal formed as a surface, injecting a liquid insulating resin into the channel using the plate forming a boundary surface of the mold, Curing, and then
Cutting the plate and the resin along a line corresponding to the channel. 18. The step of providing an integral flat metal anode plate, and spaced on said anode plate in parallel with said anode portion electrically and mechanically bonded to said anode plate. Forming a plurality of solid-state capacitors separated by a channel, each having a cathode portion arranged in a coplanar relationship; and Fabricated by a method comprising the steps of electrically and mechanically bonding to the cathode portion, and then simultaneously cutting the anode plate and the cathode plate along a cutting line aligned with the channel and perpendicular to the plate. Manufactured from solid capacitors that can be mounted on the surface. 19. The article of manufacture of claim 18, further comprising a step of substantially completely filling said channel with an insulating material prior to said cutting step. 20. A powder solid capacitor having a flat metal substrate and a lower surface engaging the substrate and an upper surface parallel to and spaced from the substrate. Addressing a wafer made of molded metal to the substrate,
Sintering the wafer in contact with the substrate, solidifying the powder metal into a porous block, electrically and mechanically bonding the wafer to the substrate, and a step perpendicular to the substrate. Dividing the sintered wafer into a plurality of separation units along one cutting line; oxidizing the units to form a dielectric coating; and conducting the upper surface over the dielectric coating. Forming a counter electrode coating, electrically and mechanically bonding a flat, integral metal cathode plate to the upper surface while covering the plurality of units, and thereafter the first cutting line; Forming a second series of cuts through the metal cathode plate and the substrate and orthogonal to the substrate in alignment with the substrate.