JP3100897B2 - Manufacturing method of integrated solar cell device - Google Patents
Manufacturing method of integrated solar cell deviceInfo
- Publication number
- JP3100897B2 JP3100897B2 JP08069526A JP6952696A JP3100897B2 JP 3100897 B2 JP3100897 B2 JP 3100897B2 JP 08069526 A JP08069526 A JP 08069526A JP 6952696 A JP6952696 A JP 6952696A JP 3100897 B2 JP3100897 B2 JP 3100897B2
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- amorphous silicon
- laser
- metal electrode
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 20
- 238000009826 distribution Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 description 12
- 239000011521 glass Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 238000000926 separation method Methods 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、集積型太陽電池
装置の製造方法に関する。The present invention relates to a method for manufacturing an integrated solar cell device.
【０００２】[0002]
【従来の技術】近年、クリーンなエネルギーとして、太
陽光発電が注目されている。その中でも特に非晶質太陽
電池装置は、低コスト化に有望であることから、太陽電
池装置の出力を向上させるために、有効面積の増大及び
変換効率の向上などの研究開発が積極的に進められてい
る。2. Description of the Related Art In recent years, solar power generation has attracted attention as clean energy. In particular, amorphous solar cell devices are promising for cost reduction, and R & D on increasing the effective area and improving conversion efficiency is being actively promoted in order to improve the output of solar cell devices. Have been.
【０００３】一般的な非晶質太陽電池装置は、ガラス基
板の上に透明導電膜、ｐ型、ｉ型、ｎ型非晶質シリコン
（ａ−Ｓｉ）膜、金属電極をこの順序で積層して形成さ
れる。そして、全体の構造として、１枚の基板から高い
電圧を取り出せる集積型構造が知られている。[0003] A typical amorphous solar cell device has a transparent conductive film, a p-type, i-type, n-type amorphous silicon (a-Si) film and a metal electrode laminated in this order on a glass substrate. Formed. As an entire structure, an integrated structure capable of extracting a high voltage from one substrate is known.
【０００４】集積型構造を形成するためには、ガラス基
板上の透明導電膜、非晶質シリコン膜、金属電極膜を分
離する必要がある。各々の膜の分離の方法としては、レ
ーザを用いたレーザパターニング法が一般的に用いられ
ている。To form an integrated structure, it is necessary to separate a transparent conductive film, an amorphous silicon film, and a metal electrode film on a glass substrate. As a method for separating each film, a laser patterning method using a laser is generally used.
【０００５】従来のレーザパターニング法を用いた集積
型太陽電池装置の製造方法につき、図５に従い説明す
る。A method for manufacturing an integrated solar cell device using a conventional laser patterning method will be described with reference to FIG.
【０００６】ガラス基板１上にＩＴＯやＳｎＯ2などか
らなる透明導電膜２を形成し、レーザ光Ｌ１で透明導電
膜２を任意の段数に短冊状に分割する（図５（ａ）参
照）。その後、この分割された透明導電膜２上に内部に
ｐｉｎ接合を有する非晶質シリコン膜３を堆積した後、
透明導電膜２の分割ラインに沿って、この分割ラインと
重ならないようにして、レーザ光Ｌ２を照射し、非晶質
シリコン膜３を分割する（図５（ｂ）参照）。続いて、
非晶質シリコン膜３上に裏面金属電極４を形成して、透
明導電膜２と裏面金属電極４とを接続した後、透明導電
膜２及び非晶質シリコン膜３の分割ラインに沿って、両
分割ラインと重ならないようにして、レーザ光Ｌ３を照
射し、裏面電極４及び非晶質シリコン膜３を除去する
（図５（ｃ）参照）。A transparent conductive film 2 made of ITO, SnO 2 or the like is formed on a glass substrate 1, and the transparent conductive film 2 is divided into an arbitrary number of strips by a laser beam L1 (see FIG. 5A). After that, an amorphous silicon film 3 having a pin junction is deposited on the divided transparent conductive film 2,
The amorphous silicon film 3 is divided by irradiating a laser beam L2 along the division line of the transparent conductive film 2 so as not to overlap with the division line (see FIG. 5B). continue,
After forming the back metal electrode 4 on the amorphous silicon film 3 and connecting the transparent conductive film 2 and the back metal electrode 4, along the dividing line of the transparent conductive film 2 and the amorphous silicon film 3, The laser beam L3 is irradiated so as not to overlap with both divided lines, and the back electrode 4 and the amorphous silicon film 3 are removed (see FIG. 5C).
【０００７】なお、上記した加工の際に用いるレーザ光
Ｌ１〜Ｌ３のレーザビーム内の分布は均一であり、それ
ぞれの加工の幅は約４０から５０μｍである。The distribution of the laser beams L1 to L3 used in the above-mentioned processing in the laser beam is uniform, and the width of each processing is about 40 to 50 μm.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、上述し
た従来のパターニング方法においては、以下に示すよう
な問題があった。However, the above-mentioned conventional patterning method has the following problems.
【０００９】まず、非晶質シリコン膜及び裏面電極それ
ぞれを加工しなければならないので、加工過程が多く、
また、加工時間も増えるという問題がある。First, each of the amorphous silicon film and the back electrode must be processed.
There is also a problem that the processing time increases.
【００１０】次に、非晶質シリコン膜及び裏面電極を別
々に加工を行うため、加工を行った際の加工ラインも増
え、有効面積が少なくなるという問題がある。Next, since the amorphous silicon film and the back surface electrode are separately processed, there is a problem that the number of processing lines at the time of processing is increased, and the effective area is reduced.
【００１１】この発明は、上述した従来の問題点を解決
するためになされたものにして、加工過程を短縮すると
ともに、有効面積の向上を図ることができる集積型太陽
電池装置の製造方法を提供することを目的とする。The present invention has been made in order to solve the above-mentioned conventional problems, and provides a method of manufacturing an integrated solar cell device capable of shortening a working process and improving an effective area. The purpose is to do.
【００１２】[0012]
【課題を解決するための手段】この発明の集積型太陽電
池装置の製造方法は、基板、透明導電膜、光活性層を有
する非晶質シリコン膜、及び金属電極を備えた集積型太
陽電池装置の製造方法であって、ビーム内の分布に強弱
をつけたレーザビームを照射し、ビーム強度の弱い部分
で前記非晶質シリコン膜及び金属電極の分離を一括して
行うと共に、ビーム強度の強い部分で前記金属電極と透
明導電膜の接続を行うことを特徴とする。Means for Solving the Problems The method of manufacturing an integrated solar cell device of the invention, a substrate, a transparent conductive film, an amorphous silicon film having a photoactive layer, and the integrated type solar cell device having a metal electrode A method of irradiating a laser beam in which the distribution in the beam has a high or low intensity, and where the beam intensity is low.
The separation of the amorphous silicon film and the metal electrode
In addition to the above, at the part where the beam intensity is strong, the metal electrode is transparent.
It is characterized in that the light conductive film is connected .
【００１３】上述した方法によれば、従来、非晶質シリ
コン膜と金属電極の分離に２回のレーザ照射工程を必要
としていたのが、１回の工程で行え、加工過程を従来よ
り少なくでき、加工にかかる時間が短縮され、作業効率
が上がる。According to the above-described method, two laser irradiation steps were conventionally required to separate the amorphous silicon film and the metal electrode. However, the laser irradiation step can be performed in one step, and the number of processing steps can be reduced as compared with the conventional method. In addition, the processing time is shortened, and the working efficiency is increased.
【００１４】また、レーザビーム内の分布に強弱を有す
るレーザビームを用いることにより、分布の強い部分で
接続を、分布の弱い部分で分離が行えるようになり、非
晶質シリコン膜及び金属電極の加工が同時に行える。こ
のため、加工ラインが少なくなり、有効面積の向上を図
ることができる。 In addition, the distribution in the laser beam has strength.
By using a laser beam,
Connections can be separated in areas where distribution is weak.
The processing of the amorphous silicon film and the metal electrode can be performed simultaneously. This
Reduces the number of processing lines and improves the effective area
Can be
【００１５】[0015]
【００１６】以下、この発明の実施の形態につき図面を
参照して説明する。図１ないし図３は、この発明の実施
の形態によるレーザパターニング法を用いた集積型太陽
電池装置の製造方法を示し、図１は、工程別に示す断面
図、図２及び図３は、レーザビームに強弱をつける光学
系の構成図である。Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 to 3 show a method of manufacturing an integrated solar cell device using a laser patterning method according to an embodiment of the present invention. FIG. 1 is a sectional view showing each step, and FIGS. FIG. 2 is a configuration diagram of an optical system that adds strength to the image.
【００１７】従来と同様に、ガラス基板１上にＩＴＯや
ＳｎＯ2などからなる透明導電膜２を形成し、レーザ光
で透明導電膜２を任意の段数に短冊状に分割する（図１
（ａ）参照）。As in the conventional case, a transparent conductive film 2 made of ITO, SnO 2 or the like is formed on a glass substrate 1, and the transparent conductive film 2 is divided into strips by laser light into an arbitrary number of steps (FIG. 1).
(See (a)).
【００１８】その後、この分割された透明導電膜２上に
内部にｐｉｎ接合を有する非晶質シリコン膜３を堆積し
た後、この非晶質シリコン膜３上に裏面金属電極４を形
成する（図１（ｂ）参照）。Thereafter, an amorphous silicon film 3 having a pin junction is deposited on the divided transparent conductive film 2 and a back metal electrode 4 is formed on the amorphous silicon film 3. 1 (b)).
【００１９】この発明においては、次の工程において、
透明導電膜２の分割ラインに沿って、この分割ラインに
重ならないように、非晶質シリコン膜３及び裏面金属電
極４を同時にパターニングし、裏面金属４と透明電極３
との接続、及び非晶質シリコン膜３並びに裏面金属電極
４の分離を同時に行うものである（図１（ｃ）参照）。In the present invention, in the next step,
The amorphous silicon film 3 and the back metal electrode 4 are simultaneously patterned along the division line of the transparent conductive film 2 so as not to overlap with the division line.
And the separation of the amorphous silicon film 3 and the back metal electrode 4 are simultaneously performed (see FIG. 1C).
【００２０】このため、この発明においては、この加工
に用いるレーザビームＬとして、分布が均一なレーザビ
ームではなく、光学手段によりビーム内の分布に強弱を
つけたてレーザビームを用いる。そして、レーザのパワ
ーとしては、強い部分Ｌａで約４０〜５０ｍＷ、弱い部
分Ｌｂで約３０〜４０ｍＷの出力である。また、この時
のビーム形状のイメージとしては、図１（ｃ）に示すよ
うになる。For this reason, in the present invention, the laser beam L used for this processing is not a laser beam having a uniform distribution, but a laser beam in which the distribution in the beam is adjusted by optical means. The laser power is about 40 to 50 mW in the strong part La and about 30 to 40 mW in the weak part Lb. FIG. 1C shows an image of the beam shape at this time.
【００２１】さらに、加工の幅はレーザビームの強い部
分、弱い部分共に約２５〜３０μｍであり、両者を合わ
せた場合約５０〜６０μｍになる。Further, the processing width is about 25 to 30 μm for both the strong part and the weak part of the laser beam, and when both are combined, it becomes about 50 to 60 μm.
【００２２】上記のように、レーザビーム内の分布に強
弱を有するレーザビームを用いることにより、分布の強
い部分で接続を、分布の弱い部分で分離が行えるように
なり、非晶質シリコン膜３及び金属電極４の加工が同時
に行える。As described above, by using a laser beam having a strong or weak distribution in the laser beam, connection can be made at a portion with a strong distribution and separation can be made at a portion with a weak distribution. And the processing of the metal electrode 4 can be performed simultaneously.
【００２３】次に、レーザビーム内の分布に強弱をつけ
る光学手段の例を図２及び図３に従い説明する。Next, an example of the optical means for increasing or decreasing the distribution in the laser beam will be described with reference to FIGS.
【００２４】図２に示す例においては、ＹＡＧレーザよ
り出射されたレーザビームをビームスプリッタ１１によ
り２本のビームに分割する。この例においては、２本の
ビームに分割する際に、レーザビームに強弱をつける。
ビームスプリッタ１１はガラス基板上に誘電体の多層膜
を形成し、入射ビームを透過ビームと反射ビームの２本
に分割する。そして、誘電体多層膜の種類、膜厚を変え
ることにより、透過ビームと反射ビームの割合が制御で
きる。例えば、膜厚を厚くすると、透過ビームが減り、
反射ビームが増える。このように、ビームスプリッター
１１でＹＡＧレーザより出射されたレーザビームに強弱
をつけた２本のビームに分割した後、反射ミラー１２、
１３及びガラスの所定の領域に反射コートを設けたビー
ム合成手段１４により２本のビームを５０〜６０μｍの
１本のビームに戻す。この結果、レーザビーム内の分布
が図１（ｃ）のＬに示すようなビーム形状に調整され、
ビームの強い部分で約４０〜５０ｍＷ、弱い部分で約３
０〜４０ｍＷの出力を得るように調整される。また、加
工の幅は、強い部分、弱い部分共に約２５〜３０μｍで
あり、２本を１本に戻した場合、約５０〜６０μｍにな
る。In the example shown in FIG. 2, a laser beam emitted from a YAG laser is split by a beam splitter 11 into two beams. In this example, when dividing the laser beam into two beams, the intensity is given to the laser beam.
The beam splitter 11 forms a dielectric multilayer film on a glass substrate and splits an incident beam into two beams, a transmitted beam and a reflected beam. The ratio between the transmitted beam and the reflected beam can be controlled by changing the type and thickness of the dielectric multilayer film. For example, a thicker film reduces the transmitted beam,
The reflected beam increases. As described above, after the laser beam emitted from the YAG laser is split by the beam splitter 11 into two beams having different intensities, the reflection mirror 12
The two beams are returned to one beam of 50 to 60 μm by a beam combining means 14 provided with a reflection coat on a predetermined area of the glass 13 and glass. As a result, the distribution in the laser beam is adjusted to a beam shape as shown by L in FIG.
Approximately 40-50 mW in the strong part of the beam, about 3 in the weak part
It is adjusted to obtain an output of 0 to 40 mW. The width of the processing is about 25 to 30 μm for both the strong part and the weak part, and becomes about 50 to 60 μm when two pieces are returned to one piece.
【００２５】図３に示す例においては、ＹＡＧレーザよ
り出射されたレーザビームをビームスプリッタ１１によ
り２本のビームに分割する。この例においては、２本の
ビームは、図２に示すものとは異なり、両方ともビーム
の強さは等しい。そして、１本のビーム径はそのまま
で、もう１本のビームのビーム径をエクスパンダ１５に
より広げる。その後、２本のビームが再び１本になるよ
うに、反射ミラー１２、１３及び光学合成手段１４の調
整を行う。そして、重なったレーザビームはビーム径が
異なるので、一部分だけが重なるようになる。この結
果、１本に重ね合わされたビームは、重なった部分で
は、レーザビームの強度が強くなり、重なっていない部
分は、重なった部分に比べて強度が弱くなるので、レー
ザビームの分布に強弱がつけられる。In the example shown in FIG. 3, a laser beam emitted from a YAG laser is split by a beam splitter 11 into two beams. In this example, the two beams are different from those shown in FIG. 2 and both have the same beam intensity. Then, the beam diameter of the other beam is expanded by the expander 15 while the beam diameter of one beam remains unchanged. Then, the reflection mirrors 12 and 13 and the optical combining means 14 are adjusted so that the two beams become one again. Then, since the overlapping laser beams have different beam diameters, only a part thereof overlaps. As a result, the intensity of the laser beam in the overlapped portion of the laser beam is higher in the overlapping portion, and the intensity of the non-overlapping portion is lower than that in the overlapping portion. Can be attached.
【００２６】この図３に示す例においても、レーザのパ
ワーとしては、強い部分で約４０〜５０ｍＷ、弱い部分
で約３０〜４０ｍＷの出力に調整される。また、加工の
幅は強い部分、弱い部分共に約２５〜３０μｍであり、
２本を１本に戻した場合約５０〜６０μｍになるように
調整される。In the example shown in FIG. 3 as well, the power of the laser is adjusted to about 40 to 50 mW in the strong part and to about 30 to 40 mW in the weak part. In addition, the width of the processing is about 25-30 μm for both the strong part and the weak part,
When two are returned to one, it is adjusted to be about 50 to 60 μm.
【００２７】上述した図２または図３に示す光学手段を
用いて、ＹＡＧレーザから出た１本のレーザビームをビ
ームスプリッターにより２本に分割し、分割後それぞれ
のレーザビームが別々の光学系を通り、別々のレーザビ
ームを再び元の１本になるように光学系の調整を行っ
て、レーザビームの分布に強弱をつけたレーザビームを
非晶質シリコン膜３と金属電極４との加工に用いる。そ
して、分布の強い部分で接続を、分布の弱い部分で分離
が行えるようになり、非晶質シリコン膜及び裏面電極の
加工が同時に行える。Using the optical means shown in FIG. 2 or FIG. 3, one laser beam emitted from the YAG laser is split into two beams by a beam splitter. As described above, the optical system is adjusted so that the separate laser beams become the original one again, and the laser beam with the intensity of the laser beam distributed is processed for processing the amorphous silicon film 3 and the metal electrode 4. Used. Then, connection can be performed at a portion with a strong distribution, and separation can be performed at a portion with a weak distribution, so that the amorphous silicon film and the back surface electrode can be simultaneously processed.
【００２８】この結果、透明導電膜２の分離を含めて従
来３回行っていたレーザパターニング加工工程が２回に
短縮出来る。さらに、分布に強弱をつけたレーザビーム
の加工幅は、約５０から６０μｍの加工幅であり、透明
導電膜３の分割ラインに沿って、１回のレーザ照射の加
工により、接続及び分離が行えるので、加工ラインの本
数が少なくなり、無効部分を減らすことができる。As a result, the laser patterning process which has conventionally been performed three times including the separation of the transparent conductive film 2 can be reduced to two times. Further, the processing width of the laser beam with its distribution varied is about 50 to 60 μm, and connection and disconnection can be performed by one laser irradiation processing along the division line of the transparent conductive film 3. Therefore, the number of processing lines is reduced, and an ineffective portion can be reduced.
【００２９】図５に示す方法により製造した従来の太陽
電池装置の有効面積とこの発明により製造した太陽電池
装置の有効面積を調べたところ、従来の９３％から９５
％に向上し、この発明によれば、有効面積を増大させる
ことができた。The effective area of the conventional solar cell device manufactured by the method shown in FIG. 5 and the effective area of the solar cell device manufactured according to the present invention were examined.
%, And according to the present invention, the effective area could be increased.
【００３０】次に、この発明の参考例につき図４に従い
説明する。図４は、この発明の参考例を工程別に示す断
面図である。Next, a reference example of the present invention will be described with reference to FIG. FIG. 4 is a sectional view showing a reference example of the present invention for each process.
【００３１】表面に絶縁層を設けた金属等の基板１０上
に、裏面金属電極１４を設け、この裏面金属電極１４上
に内部にｐｉｎ接合を有する非晶質シリコン膜３を堆積
する（図４ａ（参照））。A backside metal electrode 14 is provided on a substrate 10 made of metal or the like having an insulating layer on the surface, and an amorphous silicon film 3 having a pin junction is deposited on the backside metal electrode 14 (FIG. 4A). (reference)).
【００３２】この例においては、次の工程において、非
晶質シリコン膜３及び裏面金属電極１４を同時にパター
ニングし、非晶質シリコン膜３並びに裏面金属電極１４
の分離を一括して行うものである（図４（ｂ）参照）。In this example, in the next step, the amorphous silicon film 3 and the back metal electrode 14 are simultaneously patterned to form the amorphous silicon film 3 and the back metal electrode 14.
(See FIG. 4B).
【００３３】このため、この例においても、前述した実
施の形態と同様に、この加工に用いるレーザビームＬと
して、分布が均一なレーザビームではなく、光学手段に
よりビーム内の分布に強弱をつけたレーザビームを用い
る。そして、レーザのパワーとしては、強い部分Ｌａで
約４０〜５０ｍＷ、弱い部分Ｌｂで約３０〜４０ｍＷの
出力である。また、この時のビーム形状のイメージとし
ては、図４（ｂ）に示すようになる。For this reason, also in this example, similarly to the above-described embodiment, the laser beam L used for this processing is not a laser beam having a uniform distribution, but the intensity of the distribution in the beam is adjusted by optical means. A laser beam is used. The laser power is about 40 to 50 mW in the strong part La and about 30 to 40 mW in the weak part Lb. Further, an image of the beam shape at this time is as shown in FIG.
【００３４】さらに、加工の幅はレーザビームの強い部
分、弱い部分共に約２５〜３０μｍであり、両者を合わ
せた場合約５０〜６０μｍになる。Further, the processing width is about 25 to 30 μm for both the strong part and the weak part of the laser beam, and when both are combined, it is about 50 to 60 μm.
【００３５】この例においても、図２及び図３に示す光
学手段を用いてレーザビーム内の分布に強弱をつけるよ
うに構成している。[0035] Also Oite in this example, is configured so as give the strength distribution in the laser beam using optical means shown in FIGS.
【００３６】上述した図２または図３に示す光学手段を
用いて、ＹＡＧレーザから出た１本のレーザビームをビ
ームスプリッターにより２本に分割し、分割後それぞれ
のレーザビームが別々の光学系を通り、別々のレーザビ
ームを再び元の１本になるように光学系の調整を行っ
て、レーザビームの分布に強弱をつけたレーザビームを
非晶質シリコン膜３と裏面金属電極１４との加工に用い
る。そして、分布の強い部分で非晶質シリコン膜３と裏
面金属電極１４の双方を分離し、分布の弱い部分で非晶
質シリコン膜３の分離が行えるようになり、非晶質シリ
コン膜３及び裏面金属電極１４の加工が同時に行える。Using the optical means shown in FIG. 2 or 3 described above, one laser beam emitted from the YAG laser is split into two beams by a beam splitter. As described above, the optical system is adjusted so that different laser beams become the original one again, and the laser beam having a stronger or weaker distribution of the laser beam is processed into the amorphous silicon film 3 and the back metal electrode 14. Used for Then, both the amorphous silicon film 3 and the back metal electrode 14 are separated from each other at the portion where the distribution is strong, and the amorphous silicon film 3 can be separated at the portion where the distribution is weak. The processing of the back metal electrode 14 can be performed simultaneously.
【００３７】続いて、非晶質シリコン膜１４上に、ＩＴ
ＯやＳｎＯ2などからなる透明導電膜１２を形成し、裏
面金属電極１４と透明電極１２とを接続する（図４
（ｃ）参照）。その後、レーザ光Ｌで裏面金属電極１４
の分割ラインに沿って、この分割ラインに重ならないよ
うに、透明導電膜１２を分割して、この実施の形態の集
積型太陽電池装置が得られる（図４（ｄ）参照）。Subsequently, an IT layer is formed on the amorphous silicon film 14.
A transparent conductive film 12 made of O, SnO 2 or the like is formed, and the back metal electrode 14 and the transparent electrode 12 are connected (FIG. 4).
(C)). Then, the back metal electrode 14 is irradiated with the laser light L.
The transparent conductive film 12 is divided so as not to overlap the dividing line along the dividing line of (1), and the integrated solar cell device of this embodiment is obtained (see FIG. 4 (d)).
【００３８】[0038]
【発明の効果】以上説明したように、この発明によれ
ば、従来、非晶質シリコン膜と金属電極の分離に２回の
レーザ照射工程を必要としていたのが、１回の工程で行
え、加工過程を従来より少なくでき、加工にかかる時間
が短縮し、作業効率を上げることができる。As described above, according to the present invention, two laser irradiation steps were conventionally required to separate an amorphous silicon film and a metal electrode, but this can be performed in one step. The number of processing steps can be reduced, and the time required for processing can be shortened, and the working efficiency can be increased.
【００３９】また、非晶質シリコン膜と金属電極とを同
時に加工ができることにより、加工ラインが少なくな
り、有効面積の向上を図ることができる。Further, since the amorphous silicon film and the metal electrode can be processed at the same time, the number of processing lines is reduced, and the effective area can be improved.
【図１】この発明の実施の形態によるレーザパターニン
グの方法を工程別に示す断面図である。FIG. 1 is a cross-sectional view showing a laser patterning method according to an embodiment of the present invention for each process.
【図２】レーザビームに強弱をつける光学系の構成図で
ある。FIG. 2 is a configuration diagram of an optical system for giving intensity to a laser beam.
【図３】レーザビームに強弱をつける光学系の構成図で
ある。FIG. 3 is a configuration diagram of an optical system for giving intensity to a laser beam.
【図４】この発明の参考例によるレーザパターニングの
方法を工程別に示す断面図である。4 is a sectional view showing a method of laser patterning by reference example of the present invention to specific process.
【図５】従来のレーザパターニングの方法を工程別に示
す断面図である。FIG. 5 is a cross-sectional view showing a conventional laser patterning method for each process.
１ ガラス ２ 透明導電膜 ３ 非晶質シリコン膜 ４ 金属電極 Ｌ レーザビーム Reference Signs List 1 glass 2 transparent conductive film 3 amorphous silicon film 4 metal electrode L laser beam
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−94174（ＪＰ，Ａ) 特開 昭63−156371（ＪＰ，Ａ) 特開 昭63−37674（ＪＰ，Ａ) 特開 平３−64043（ＪＰ，Ａ) 特開 平７−263726（ＪＰ，Ａ) 特開 平７−58351（ＪＰ，Ａ) 特開 平３−97273（ＪＰ，Ａ) 特開 昭63−237483（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 31/04 - 31/078 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-4-94174 (JP, A) JP-A-63-156371 (JP, A) JP-A-63-37674 (JP, A) 64043 (JP, A) JP-A-7-263726 (JP, A) JP-A-7-58351 (JP, A) JP-A-3-97273 (JP, A) JP-A-63-237483 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 31/04-31/078
Claims (1)
晶質シリコン膜、及び金属電極を備えた集積型太陽電池
装置の製造方法であって、ビーム内の分布に強弱をつけ
たレーザビームを照射し、ビーム強度の弱い部分で前記
非晶質シリコン膜及び金属電極の分離を一括して行うと
共に、ビーム強度の強い部分で前記金属電極と透明導電
膜の接続を行うことを特徴とする集積型太陽電池装置の
製造方法。1. An integrated solar cell comprising a substrate, a transparent conductive film, an amorphous silicon film having a photoactive layer, and a metal electrode.
A method of manufacturing a device, wherein a laser beam having a strong or weak distribution in the beam is irradiated, and the portion having a weak beam intensity is irradiated with the laser beam.
When the amorphous silicon film and the metal electrode are separated at once
In both cases, the metal electrode and the transparent conductive
A method for manufacturing an integrated solar cell device , comprising connecting a film .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08069526A JP3100897B2 (en) | 1996-03-26 | 1996-03-26 | Manufacturing method of integrated solar cell device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08069526A JP3100897B2 (en) | 1996-03-26 | 1996-03-26 | Manufacturing method of integrated solar cell device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09260697A JPH09260697A (en) | 1997-10-03 |
| JP3100897B2 true JP3100897B2 (en) | 2000-10-23 |
Family
ID=13405267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08069526A Expired - Fee Related JP3100897B2 (en) | 1996-03-26 | 1996-03-26 | Manufacturing method of integrated solar cell device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3100897B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7073246B2 (en) | 1999-10-04 | 2006-07-11 | Roche Diagnostics Operations, Inc. | Method of making a biosensor |
| US6645359B1 (en) | 2000-10-06 | 2003-11-11 | Roche Diagnostics Corporation | Biosensor |
| US6662439B1 (en) | 1999-10-04 | 2003-12-16 | Roche Diagnostics Corporation | Laser defined features for patterned laminates and electrodes |
| US6540890B1 (en) | 2000-11-01 | 2003-04-01 | Roche Diagnostics Corporation | Biosensor |
| US6814844B2 (en) | 2001-08-29 | 2004-11-09 | Roche Diagnostics Corporation | Biosensor with code pattern |
| US6866758B2 (en) | 2002-03-21 | 2005-03-15 | Roche Diagnostics Corporation | Biosensor |
-
1996
- 1996-03-26 JP JP08069526A patent/JP3100897B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09260697A (en) | 1997-10-03 |
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