JP3117966B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor element is bonded to a support member such as a lead frame using a die bonding material and sealed with a resin, and a method of manufacturing the semiconductor device.

[0002]

2. Description of the Related Art Conventionally, as a method of bonding a semiconductor element to a lead frame, a method of supplying a die bonding material onto the lead frame and bonding the semiconductor element has been used.

[0003] As these materials, for example, Au-Si
Eutectic, solder, resin paste and the like are known. Among them, Au-Si eutectic has a problem that it is expensive and has a high elastic modulus, and it is necessary to vibrate the bonded portion. There is a problem that solder cannot withstand a temperature higher than the melting point temperature and has a high elastic modulus.

[0004] Silver paste is the most common resin paste, and silver paste is the most inexpensive, has high heat resistance, and has a low elastic modulus as compared with other materials. Many are used.

[0005] In recent years, the demand for high-density mounting due to the miniaturization and thinning of electronic devices has been rapidly increasing. In recent years, the surface mounting type semiconductor package suitable for high-density mounting has been mainly used instead of the conventional pin insertion type. It has become

[0006]

This surface mount type package uses infrared reflow, vapor phase reflow, or the like to solder leads directly to a printed circuit board or the like.
The entire package is heated and mounted by solder dip or the like.

At this time, the entire package is 210 to 260
If moisture is present inside the package due to exposure to a high temperature of ℃, explosive vaporization of the moisture causes a package crack (hereinafter referred to as a reflow crack).

The reflow crack significantly reduces the reliability of the semiconductor package, and is a serious problem and technical problem.

The mechanism of occurrence of reflow cracks caused by the die bonding material is as follows. While the semiconductor package is stored, (1) the die bonding material absorbs moisture, (2) the water is vaporized by heating at the time of reflow soldering, and (3) the vapor pressure destroys the die bonding layer. Peeling occurs,
(4) Reflow cracks occur.

While the reflow crack resistance of the sealing material has been improved, the reflow crack caused by the die bonding material has become a serious problem, especially in a thin package, and the improvement of the reflow crack resistance is strongly. Has been requested.

[0011] With the silver paste used most commonly in the past, it has become difficult to apply the silver paste uniformly over the entire application area due to the enlargement of chips.
Since it is a paste, voids are easily generated in the adhesive layer, and reflow cracks are easily generated.

The present invention provides a semiconductor device which uses a film-shaped organic die bonding material, does not cause reflow cracks, and has excellent reliability, and a method for manufacturing the same.

[0013]

In the present invention, a film-like organic die bonding material is used. This is a film-like material mainly composed of an organic material such as an epoxy resin, a silicone resin, an acrylic resin, and a polyimide resin (including a material obtained by adding a metal filler and an inorganic filler to an organic material). A film-shaped organic die bonding material is pressed and bonded thereon while being heated, and a semiconductor element is further laminated on the film-shaped organic die bonding material and then heated and pressed. That is, by forming a resin paste into a film, a die bonding material is to be uniformly applied to the bonded portion.

FIG. 1 shows an example of a manufacturing process of a semiconductor device according to the present invention. The film-shaped organic die bonding material 1 is cut from a roll into a predetermined size by a cutter 2 (FIG. 1A). The film-shaped organic die bonding material 1 is press-bonded to a die pad portion 6 of a lead frame 5 on a hot platen 7 with a press-fit 4 (FIG. 1B). Crimping conditions are a temperature of 100 to 250 ° C., a time of 0.1 to 20 seconds, and a pressure of 4-2.
00 gf / mm ² is preferred.

The semiconductor element 8 is placed on the film-shaped organic die bonding material 1 stuck on the die pad portion 6 and is subjected to heat bonding (die bonding) (FIG. 1C). The conditions of the die bonding are preferably a temperature of 100 to 350 ° C., a time of 0.1 to 20 seconds, a pressure of 0.1 to 30 gf / mm ² , and a temperature of 150 to ² g.
50 ° C., time 0.1 second or more and less than 2 seconds, pressure 0.1-4 g
f / mm ² is more preferable, the temperature is 150 to 250 ° C., the time is 0.1 second or more and 1.5 seconds or less, and the pressure is 0.3 to 2 gf / m 2.
m ² is most preferred. After that, wire bonding process (Fig. 1
(D)), the resin sealing step of the semiconductor element (FIG. 1)
After (e)), a semiconductor device is manufactured. 9 is a sealing resin.

For example, the film-like organic die bonding material of the present invention is obtained by dissolving and dispersing an organic material such as polyimide and epoxy resin and, if necessary, an additive such as a metal filler in an organic solvent. The coating varnish is applied to a carrier film such as a biaxially stretched polypropylene film, the solvent is volatilized, and the varnish is peeled off from the carrier film. In this way, a film having self-supporting properties can be obtained.

The present invention has found that there is a correlation between the occurrence of reflow cracks in a semiconductor device and the physical properties and characteristics of a film-like organic die bonding material. This is the result of a detailed study of the relationship.

According to a first aspect of the present invention, in a semiconductor device in which a semiconductor element is bonded to a supporting member with a die bonding material and the semiconductor element is sealed with a resin, the die bonding material has a water absorption of 1.5 vol% or less. A semiconductor device using a film-shaped organic die bonding material and a method for manufacturing the same.

According to a second aspect of the present invention, in a semiconductor device in which a semiconductor element is bonded to a support member with a die bonding material and the semiconductor element is sealed with a resin, the saturated moisture absorption of the die bonding material is 1.0 vol% or less. And a method of manufacturing the same using the film-shaped organic die bonding material.

According to a third aspect of the present invention, in a semiconductor device in which a semiconductor element is bonded to a support member with a die bonding material and the semiconductor element is sealed with a resin, the residual volatile content in the die bonding material is 3.0% by weight or less. And a method of manufacturing the same using the film-shaped organic die bonding material.

According to a fourth aspect of the present invention, there is provided a semiconductor device in which a semiconductor element is bonded to a support member with a die bonding material and the semiconductor element is sealed with a resin.
A semiconductor device using a film-shaped organic die bonding material having an elastic modulus at 0 ° C. of 10 MPa or less, and a method for manufacturing the same.

According to a fifth aspect of the present invention, in a semiconductor device in which a semiconductor element is bonded to a support member with a die bonding material and the semiconductor element is sealed with a resin, the semiconductor element is bonded to the die bonding material with the support member. A semiconductor device and a method of manufacturing the same, wherein a film-shaped organic die bonding material having a void volume ratio of 10% or less in a die bonding material and at an interface between the die bonding material and a support member at a stage is used. .

According to a sixth aspect of the present invention, in a semiconductor device in which a semiconductor element is bonded to a supporting member with a die bonding material and the semiconductor element is sealed with a resin, the semiconductor element is bonded to the supporting member as a die bonding material. A semiconductor device using a film-like organic die bonding material having a peel strength of 0.5 kgf / 5 × 5 mm chip or more at a stage, and a method for manufacturing the same.

According to a seventh aspect of the present invention, there is provided a semiconductor device in which a semiconductor element is bonded to a support member with a die bonding material and the semiconductor element is sealed with a resin. The die bonding material does not protrude from the region of the semiconductor element at the stage where the semiconductor element has an area and is bonded to the support member, that is, does not protrude from between the semiconductor element and the support member. A semiconductor device and a method for manufacturing the same, characterized in that they are used.

In these inventions, at the stage of adhering the film-shaped organic die bonding material to the support member, the film-shaped organic die bonding material having a water absorption of 1.5 vol% or less, and the film having a saturated moisture absorption of 1.0 vol% or less. An organic die bonding material, a film organic die bonding material having a residual volatile content of 3.0 wt% or less, and a film organic die bonding material having an elastic modulus at 250 ° C. of 10 MPa or less are used.

The water absorption used in the first invention is 1.5 V
ol% or less, a film-like organic die bonding material used in the second invention having a saturated moisture absorption of 1.0 vol% or less, and an elastic modulus at 250 ° C. used in the fourth invention. The film-shaped organic die bonding material having a peel strength of 0.5 kgf / 5 × 5 mm chip or more at the stage where the semiconductor element used in the sixth invention is bonded to the support member, It can be produced by adjusting the composition of the film-like organic die bonding, for example, the structure of a polymer such as polyimide or the content of a filler such as silver.

The film-forming organic die bonding material having a residual volatile content of 3.0 wt% or less used in the third invention and the semiconductor element used in the fifth invention are bonded to the support member at the stage of bonding. In the case of a film-shaped organic die-bonding material in which the void present in the material and at the interface between the die-bonding material and the support member has a void volume ratio of 10% or less, the production conditions of the film-shaped organic die-bonding, such as the drying temperature and the drying time, are adjusted Can be manufactured.

As semiconductor elements, IC, LSI, VL
A general semiconductor element such as SI is used. The present invention is particularly suitably used for semiconductor devices having a size of 5 mm in length and 5 mm in width or more. As a supporting member, a lead frame having a die pad portion, a ceramic wiring board, a glass
A wiring board such as a polyimide wiring board is used. FIG. 3 shows a plan view of an example of a lead frame having a die pad portion. The lead frame 40 shown in FIG.

As the film-like organic die bonding material, not only a single-layer organic die bonding material but also a multi-layer organic die bonding material may be used. In the present invention, the film-like organic die bonding material can have two or more of the above-mentioned physical properties and characteristics. Physical properties and characteristics that are preferably combined include, for example, (1)
2. The saturated moisture absorption is 1.0 vol% or less and the remaining volatile content is 3.
0 wt% or less of a film-like organic die bonding material,
(2) The peel strength at the stage where the saturated moisture absorption rate is 1.0 vol% or less and the semiconductor element is bonded to the support member is 0.5 kg.
a film-shaped organic die bonding material of f / 5 × 5 mm chip or more, (3) a residual volatile content of 3.0 wt% or less, and a peel strength of 0.5 kgf / 5 × when the semiconductor element is bonded to the supporting member. Film-shaped organic die bonding material of 5 mm chip or more, (4) saturated moisture absorption of 1.0 v
ol% or less, the residual volatile content is 3.0 wt% or less, and the peel strength at the stage when the semiconductor element is bonded to the supporting member is 0.5.
It is a film-shaped organic die bonding material of kgf / 5 × 5 mm chip or more.

In the present invention, the above-mentioned physical properties and characteristics of the film-shaped organic die bonding material can be arbitrarily combined according to the purpose of use.

Further, the film-like organic die bonding material of (1) to (4) or the film-like organic die bonding material having any combination of the above-mentioned physical properties and characteristics is prepared by using a semiconductor having an area equal to or less than the area of the semiconductor element. It is preferable to use the film as an organic die bonding material that does not protrude from the size of the semiconductor element when the element is bonded to the support member.

The semiconductor device of the present invention can avoid the occurrence of reflow cracks during solder reflow of semiconductor device mounting, and is excellent in reliability.

As the organic material of the film-like organic die bonding material of the present invention, a polyimide resin is preferable. Examples of the tetracarboxylic dianhydride used as a raw material of the polyimide resin include 1,2- (ethylene) bis (trimellitate anhydride), 1,3- (trimethylene) bis (trimellitate anhydride), 1,4- (tetramer Methylene) bis (trimellitate anhydride), 1,5- (pentamethylene) bis (trimellitate anhydride), 1,6- (hexamethylene) bis (trimellitate anhydride), 1,7-
(Heptamethylene) bis (trimellitate anhydride),
1,8- (octamethylene) bis (trimellitate anhydride), 1,9- (nonamethylene) bis (trimellitate anhydride), 1,10- (decamethylene) bis (trimellitate anhydride), 1,12- (dodecamethylene ) Bis (trimellitate anhydride), 1,16- (hexadecamethylene) bis (trimellitate anhydride), 1,18-
(Octadecamethylene) bis (trimellitate anhydride), pyromellitic dianhydride, 3,3 ', 4,4'-
Diphenyltetracarboxylic dianhydride, 2,2 ', 3
3'-diphenyltetracarboxylic dianhydride, 2,2-
Bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydride Anhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-
Dicarboxyphenyl) methane dianhydride, bis (3,4
-Dicarboxyphenyl) methane dianhydride, bis (3,
4-dicarboxyphenyl) sulfone dianhydride, 3,
4,9,10-perylenetetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4 3 ', 4'-benzophenonetetracarboxylic dianhydride, 2,3,2', 3-benzophenonetetracarboxylic dianhydride, 2,3,3 ', 4'-benzophenonetetracarboxylic dianhydride, , 2,5,6-
Naphthalenetetracarboxylic dianhydride, 2,3,6,7
-Naphthalenetetracarboxylic dianhydride, 1,2,4
5- naphthalenetetracarboxylic dianhydride, 1,4
5,8-naphthalene-tetracarboxylic dianhydride, 2,
6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,
4,5,8-tetracarboxylic dianhydride, 2,3,6
7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,1
0-tetracarboxylic dianhydride, pyrazine-2,3
5,6-tetracarboxylic dianhydride, thiophene-2,
3,4,5-tetracarboxylic dianhydride, 2,3
3 ', 4'-biphenyltetracarboxylic dianhydride,
3,4,3 ', 4'-biphenyltetracarboxylic dianhydride, 2,3,2', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride Product, bis (3,4-dicarboxyphenyl) methylphenylsilane dianhydride, bis (3,4
-Dicarboxyphenyl) diphenylsilane dianhydride,
1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1,3-bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride Product, p-phenylenebis (trimellitate anhydride), ethylenetetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic acid Acid dianhydride, 4,8-dimethyl-1,2,3
5,6,7-hexahydronaphthalene-1,2,5,6
Tetracarboxylic dianhydride, cyclopentane-1,
2,3,4-tetracarboxylic dianhydride, pyrrolidine-
2,3,4,5-tetracarboxylic dianhydride, 1,2,2
3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-
Dicarboxylic dianhydride) sulfone, bicyclo- (2,
2,2) -oct-7-ene - 2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,
2-bis [4- (3,4-dicarboxyphenoxy) phenyl] hexafluoropropane dianhydride, 4,4'-
Bis (3,4-dicarboxyphenoxy) diphenylsulfide dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride), 1,3-bis (2-hydroxy Hexafluoroisopropyl) benzenebis (trimellitic anhydride), 5- (2,5-dioxotetrahydrofuryl)-
There are 3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride and the like, and two or more kinds may be used in combination.

The diamine used as a raw material of the polyimide resin includes o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3 '.
-Diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4 '
-Diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4-amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoro Methane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone,
3,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfide, 3,4'-diamino diphenyl sulfide, 4,4'-diamino diphenyl sulfide , 3,
3'-diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane,
2,2 '-(3,4'-diaminodiphenyl) propane, 2,2-bis (4-aminophenyl) propane,
2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3 -Bis (3-aminophenoxy) benzene, 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 '-(1,4-phenylenebis (1 -Methylethylidene)) bisaniline, 3,4 '
-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2
-Bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexa Fluoropropane, 2, 2
-Bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl) sulfide, bis (4- (3 -Aminophenoxy) phenyl) sulfone, bis (4- (4
Aromatic diamines such as -aminophenoxy) phenyl) sulfone, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, And aliphatic diamines such as 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, and 1,12-diaminododecane. The above may be used as a mixture.

A polyimide can be obtained by subjecting a tetracarboxylic dianhydride and a diamine to a condensation reaction by a known method. That is, in an organic solvent, tetracarboxylic dianhydride and diamine are used in an equimolar or almost equimolar manner (addition order of each component is arbitrary), and the reaction temperature is 80 ° C. or lower, preferably 0 to 0 ° C.
React at 50 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases, and polyamic acid, which is a precursor of polyimide, is generated.

The polyimide can be obtained by subjecting the above reaction product (polyamic acid) to dehydration and ring closure. Dehydration ring closure is 1
The heat treatment can be performed at 20 ° C. to 250 ° C. or a chemical method.

As the organic material of the film-like organic die bonding material of the present invention, a glycidyl ether type, glycidylamine type, glycidyl ester type or alicyclic epoxy resin is used.

As described above, in the method of manufacturing a semiconductor device according to the present invention, the conditions for die bonding are as follows.
50 ° C., time 0.1-20 seconds, pressure 0.1-30 gf /
mm ² is preferable, the temperature is 150 to 250 ° C., and the time is 0.1
More preferably, the pressure is 0.1 to 4 gf / mm ² , the temperature is 150 to 250 ° C., and the time is 0.1 second or more.
Most preferably, the pressure is 0.3 to ² gf / mm ^{2 for} 5 seconds or less.

Film-like organic die bonding material 25
If a film having an elastic modulus at 0 ° C. of 10 MPa or less is used, die bonding is performed under the conditions of a temperature of 150 to 250 ° C., a time of 0.1 second or more and less than 2 seconds, and a pressure of 0.1 to 4 gf / mm ^2. Peel strength (for example, 0.5 kg
f / 5 × 5 mm chip or more).

[0040]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below, but the present invention is not limited to these embodiments. The polyimides used in the following examples are all obtained by mixing equimolar acid anhydrides and diamines in a solvent and heating to polymerize. In each of the following examples, polyimide A is composed of 1,2- (ethylene) bis (trimellitate anhydride) and bis (4-amino-3,
5-dimethylphenyl) methane, and polyimide B is a polyimide synthesized from 1,2- (ethylene) bis (trimellitate anhydride) and 4,4′-diaminodiphenyl ether. C is a polyimide synthesized from 1,2- (ethylene) bis (trimellitate anhydride) and bis (4-amino-3,5-diisopropylphenyl) methane, and polyimide D is 1,2- (ethylene ) A polyimide synthesized from bis (trimellitate anhydride) and 2,2-bis [4- (4-aminophenoxy) phenyl] propane, and polyimide E is 1,2- (ethylene)
A polyimide synthesized from an equimolar mixture of bis (trimellitate anhydride) and 1,10- (decamethylene) bis (trimellitate anhydride) and 2,2-bis [4- (4-aminophenoxy) phenyl] propane. The polyimide F is a polyimide synthesized from 1,10- (decamethylene) bis (trimellitate anhydride) and 2,2-bis [4- (4-aminophenoxy) phenyl] propane.

Example 1 Polyimide 100 shown in Table 1
g and 10 g of the epoxy resin are dissolved by adding 280 g of an organic solvent. Here, a predetermined amount of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

This coating varnish was applied to a carrier film (OP
P film: biaxially oriented polypropylene), and heated in a hot-air circulation dryer to evaporate and dry the solvent.
A film-shaped organic die bonding material having the composition and water absorption shown in Table 1 was produced.

On the tab of the lead frame, the film-shaped organic die bonding material shown in Table 1 was bonded by heating at 160 ° C., and the temperature of 300 ° C. was applied to the lead frame to which the film-shaped organic die bonding material was bonded. , Pressure 12.5gf / m
m ^2, at time 5 seconds, to mount the semiconductor element performs a wire bonding, sealing material (Hitachi Chemical Co., Ltd.,
(QFP (Quad Flat Package) Package 1)
4 × 20 × 1.4 mm, chip size 8 × 10 mm, 4
2 alloy lead frame).

The semiconductor device after sealing is subjected to 85 ° C. and 85% RH.
168 hours in a constant temperature / humidity oven, and then heated in an IR reflow furnace at 240 ° C. for 10 seconds.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack occurrence rate (%) was calculated by the following equation.
Was measured, and the reflow crack resistance was evaluated.

(Number of occurrences of reflow cracks / number of tests) ×
100 = reflow crack occurrence rate (%) Table 1 shows the evaluation results. In addition, "Epinal" (trade name) manufactured by Hitachi Chemical Co., Ltd. was used as the silver paste.

[0047]

[Table 1]

The method of measuring the water absorption is as follows. 5
A film having a size of 0 × 50 mm was used as a sample, and the sample was dried in a vacuum drier at 120 ° C. for 3 hours. After cooling in a desiccator, the dry weight was measured and designated as M1. The sample is immersed in distilled water at room temperature for 24 hours and then taken out. The surface of the sample is wiped off with a filter paper and quickly weighed to obtain M2.

[(M2-M1) / (M1 / d)] × 10
Water absorption was calculated as 0 = water absorption (vol%). d is the density of the film-shaped organic die bonding material.

Example 2 Polyimide 100 shown in Table 2
g and 10 g of the epoxy resin are dissolved by adding 280 g of an organic solvent. Here, a predetermined amount of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

The coating varnish was applied to a carrier film (OP
P film: biaxially oriented polypropylene), and heated in a hot-air circulation dryer to evaporate and dry the solvent.
A film-shaped organic die bonding material having the composition and saturated moisture absorption shown in Table 2 was produced.

On the tab of the lead frame, the film-shaped organic die bonding material shown in Table 2 was bonded by heating at 160 ° C.
No. is applied to the lead frame to which the film-shaped organic die bonding material is attached. 1 to 6 and the comparative example, the temperature 30
At 0 ° C., a pressure of 12.5 gf / mm ² and a time of 5 seconds,
7-10, temperature 230 ° C, pressure 0.6gf / m
m ^2, at time 1 second, to mount the semiconductor element performs a wire bonding, sealing material (Hitachi Chemical Co., Ltd.,
A semiconductor device was manufactured by molding with a product name (CEL-9000) (QFP package 14 × 20 × 1.4 mm,
Chip size 8 × 10 mm, 42 alloy lead frame).

The semiconductor device after sealing is subjected to 85 ° C. and 85% RH.
168 hours in a constant temperature / humidity oven, and then heated in an IR reflow furnace at 240 ° C. for 10 seconds.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack occurrence rate (%) was calculated by the following equation.
Was measured, and the reflow crack resistance was evaluated.

(Number of reflow cracks generated / number of tests) ×
100 = reflow crack generation rate (%) Table 2 shows the evaluation results. In addition, "Epinal" (trade name) manufactured by Hitachi Chemical Co., Ltd. was used as the silver paste.

[0056]

[Table 2]

The method for measuring the saturated moisture absorption is as follows. A circular film-shaped organic die bonding material having a diameter of 100 mm was used as a sample, and the sample was placed in a vacuum drier.
After drying at 20 ° C. for 3 hours, and after allowing it to cool in a desiccator, the dry weight is measured and defined as M1. 85 ° C, 85% R sample
After absorbing moisture in a constant temperature and humidity chamber of H, the sample is taken out, weighed quickly, and when the weighed value becomes constant, the weight is defined as M2.

[(M2−M1) / (M1 / d)] × 10
The saturated moisture absorption was calculated as 0 = saturated moisture absorption (vol%). d is the density of the film-shaped organic die bonding material.

<Example 3> 140 g of dimethylacetamide and 140 g of cyclohexanone as solvents are dissolved in 100 g of polyimide F and 10 g of epoxy resin. Here, 74 g of silver powder is added, mixed well, and uniformly dispersed to obtain a coating varnish.

This coating varnish was applied to a carrier film (OP
P film: biaxially oriented polypropylene), and heated to a temperature of 80 ° C. to 120 ° C. in a hot air circulating drier to evaporate and dry the solvent. Die bonding of residual volatile components shown in Table 3 A film was produced. However, 120 ° C
For higher drying temperatures, 80
After drying at 30 ° C. for 30 minutes, the film-shaped organic die bonding material was peeled off from the OPP film, and this was fixed by sandwiching it between iron frames, then heated again in a dryer and dried.

On the tab of the lead frame, the film-like organic die bonding material shown in Table 3 was bonded by heating at 160 ° C.
A temperature of 230 ° C., a pressure of 0.6 gf / mm ² ,
In 1 second, the semiconductor element was mounted, wire-bonded, and molded with a sealing material (trade name: CEL-9000, manufactured by Hitachi Chemical Co., Ltd.) to manufacture a semiconductor device (QFP package 14 × 20 × 1). .4 mm, chip size 8 × 10 mm, 42 alloy lead frame).

The semiconductor device after sealing is subjected to 85 ° C. and 85% RH.
168 hours in a constant temperature / humidity oven, and then heated in an IR reflow furnace at 240 ° C. for 10 seconds.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack occurrence rate (%) was calculated by the following equation.
Was measured, and the reflow crack resistance was evaluated.

(Number of reflow cracks generated / number of tests) ×
100 = reflow crack occurrence rate (%) Table 3 shows the evaluation results. In addition, "Epinal" (trade name) manufactured by Hitachi Chemical Co., Ltd. was used as the silver paste.

[0065]

[Table 3]

The method for measuring the remaining volatile components is as follows. A film-shaped organic die bonding material having a size of 50 × 50 mm was used as a sample, and the weight of the sample was measured.
After heating the sample in a hot-air circulating thermostat at 200 ° C. for 2 hours, the sample was weighed to M2 and [(M2-M1) / M1]
× 100 = Remaining volatile content (wt%), and the remaining volatile content was calculated.

Example 4 In 100 g of polyimide D and 10 g of epoxy resin, 140 g of dimethylacetamide and 140 g of cyclohexanone were added and dissolved as solvents. Here, 74 g of silver powder is added, mixed well, and uniformly dispersed to obtain a coating varnish.

This coating varnish was applied to a carrier film (OP
P film: biaxially oriented polypropylene), and heated to a temperature of 80 ° C. to 120 ° C. in a hot air circulating drier to evaporate and dry the solvent. Die bonding with a void volume fraction shown in Table 5 A film was produced.

However, when the drying temperature is higher than 120 ° C., after drying on an OPP film at 80 ° C. for 30 minutes,
The film-shaped organic die bonding material was peeled off from the OPP film, and was fixed by sandwiching it between iron frames. Then, it was heated again in a dryer and dried.

Here, the void volume ratio is a void volume ratio of voids existing in the die bonding material and at the interface between the die bonding material and the support member at the stage when the semiconductor element is bonded to the support member.

On the tab of the lead frame, the film-shaped organic die bonding material shown in Table 4 was bonded by heating at 160 ° C.
300 ° C, pressure 12.5gf / m onto lead frame with film-shaped organic die bonding material
m ^2, at time 5 seconds, to mount the semiconductor element performs a wire bonding, sealing material (Hitachi Chemical Co., Ltd.,
A semiconductor device was manufactured by molding with a product name (CEL-9000) (QFP package 14 × 20 × 1.4 mm,
Chip size 8 × 10 mm, 42 alloy lead frame).

The semiconductor device after sealing is subjected to 85 ° C. and 85% RH.
168 hours in a constant temperature / humidity oven, and then heated in an IR reflow furnace at 240 ° C. for 10 seconds.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack occurrence rate (%) was obtained by the following equation.
Was measured, and the reflow crack resistance was evaluated.

(Number of reflow cracks generated / number of tests) ×
100 = reflow crack occurrence rate (%) Table 4 shows the evaluation results. In addition, "Epinal" (trade name) manufactured by Hitachi Chemical Co., Ltd. was used as the silver paste.

[0075]

[Table 4]

The method of measuring the void volume ratio is as follows. A lead frame and a silicon chip were adhered with a film-like organic die bonding material to prepare a sample, and an image observed from the upper surface of the sample was photographed using a soft X-ray apparatus. The area ratio of voids in the photograph was measured by an image analyzer, and the area ratio of voids as seen through from the upper surface = the volume ratio of voids (%).

Example 5 Polyimide 100 shown in Table 5
g and 10 g of the epoxy resin are dissolved by adding 280 g of an organic solvent. Here, a predetermined amount of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

This coating varnish was applied to a carrier film (OP
P film; biaxially oriented polypropylene), and heated in a hot air circulating dryer to evaporate and dry the solvent.
A film-shaped organic die bonding material having the composition and peel strength shown in Table 5 was produced.

Here, the peel strength is the peel strength of the film-shaped organic die bonding material at the stage when the semiconductor element is bonded to the supporting member via the film-shaped organic die bonding material.

On the tab of the lead frame, the film-shaped organic die bonding material shown in Table 5 was bonded by heating at 160 ° C.
No. is applied to the lead frame to which the film-shaped organic die bonding material is attached. For 1 to 5, the temperature is 300 ° C.,
At a pressure of 12.5 gf / mm ² and a time of 5 seconds, 6-1
About 0, temperature 230 degreeC, pressure 0.6gf / m
m ^2, at time 1 second, to mount the semiconductor element performs a wire bonding, sealing material (Hitachi Chemical Co., Ltd.,
A semiconductor device was manufactured by molding with a product name (CEL-9000) (QFP package 14 × 20 × 1.4 mm,
Chip size 8 × 10 mm, 42 alloy lead frame).

The semiconductor device after sealing is subjected to 85 ° C. and 85% RH.
168 hours in a constant temperature / humidity oven, and then heated in an IR reflow furnace at 240 ° C. for 10 seconds.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack occurrence rate (%) was calculated by the following equation.
Was measured, and the reflow crack resistance was evaluated. (Number of occurrences of reflow cracks / number of tests) × 100 = reflow crack occurrence rate (%) The evaluation results are shown in Table 5.

[0083]

[Table 5]

The peel strength was measured as follows. A 5 × 5 mm silicon chip (test piece) bonded to a supporting member for supporting a semiconductor element such as a tab surface of a lead frame with a film-like organic die bonding material interposed therebetween, and heated at 240 ° C. The top was held for 20 seconds, and the peel strength was measured at a test speed of 0.5 mm / min using a push-pull gauge as shown in FIG.
In FIG. 2, 21 is a semiconductor element, 22 is a film-like organic die bonding material, 23 is a lead frame, 24 is a push-pull gauge, and 25 is a hot plate. In this case, the measurement was performed while the temperature was maintained at 240 ° C. for 20 seconds. However, when the temperature at which the semiconductor device is mounted differs depending on the purpose of use of the semiconductor device, the measurement is performed while maintaining the semiconductor device mounting temperature.

Example 6 To 100 g of polyimide E and 10 g of epoxy resin, 280 g of an organic solvent was added and dissolved. Here, a predetermined amount of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

This coating varnish was applied to a carrier film (OP
P film; biaxially oriented polypropylene), and heated in a hot air circulating dryer to evaporate and dry the solvent.
A film-shaped organic die bonding material was manufactured.

11. A film-shaped organic die bonding material having a size shown in Table 6 was adhered on the tab of the lead frame by heating at 160 ° C., and a temperature of 300 ° C. and a pressure were applied to the lead frame to which the film-shaped organic die bonding material was adhered. 5gf
/ Mm ² , 5 seconds, the semiconductor element was mounted, wire-bonded, and molded with a sealing material (CEL-9000, manufactured by Hitachi Chemical Co., Ltd.) to produce a semiconductor device (QFP package 14). × 20 × 1.4m
m, chip size 8 × 10 mm, 42 alloy lead frame).

The semiconductor device after sealing is subjected to 85 ° C. and 85% RH.
168 hours in a constant temperature / humidity oven, and then heated in an IR reflow furnace at 240 ° C. for 10 seconds.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope. The occurrence rate of reflow crack (%) was calculated by the following equation.
Was measured, and the reflow crack resistance was evaluated. (Number of occurrences of reflow cracks / number of tests) × 100 = reflow crack occurrence rate (%) Table 6 shows the evaluation results.

[0090]

[Table 6]

<Example 7> To 100 g of polyimide F and 10 g of epoxy resin, 280 g of an organic solvent was added and dissolved. Here, a predetermined amount of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

This coating varnish was applied to a carrier film (OP
P film; biaxially oriented polypropylene), and heated in a hot air circulating dryer to evaporate and dry the solvent.
A film-shaped organic die bonding material was manufactured.

On the tab of the lead frame, 250
1 film organic die bonding material with elastic modulus at
When the semiconductor element was mounted on the lead frame to which the film-shaped organic die bonding material was bonded by heating at 60 ° C. under the die bonding conditions shown in Table 7, the peel strength was as shown in Table 7.

[0094]

[Table 7]

Film elastic modulus (MPa) measuring method: Co., Ltd.
Dynamic viscoelasticity was measured at a temperature rising rate of 5 ° C./min and a frequency of 10 Hz using a rheograph solid S type manufactured by Toyo Seiki Seisaku-sho, and the storage elastic modulus E ′ at 250 ° C. was defined as the elastic modulus. Peel strength measuring method: Same as in Example 5.

[0096]

According to the present invention, there is provided a semiconductor device which uses a film-like organic die bonding material, does not cause reflow cracks, and has excellent reliability, and a method for manufacturing the same.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of a manufacturing process of a semiconductor device of the present invention.

FIG. 2 is a front view illustrating a method for measuring a peel strength using a push-pull gauge.

FIG. 3 is a plan view of an example of a lead frame having a die pad portion.

[Description of Signs] 1 ... Film-like organic die bonding material, 2 ... Cutter, 4 ... Crimper, 5 ... Lead frame, 6 ... Die pad part, 7 ... Heat plate, 8 ... Semiconductor element, 9 ... Sealing resin, 21 …
Semiconductor device, 22: film-shaped organic die bonding material, 23: lead frame, 24: push-pull gauge, 25: hot platen, 40: lead frame, 41: die pad part.

Continued on the front page (72) Inventor Iwano Maekawa 4-46-24 Nishinarizawa, Hitachi City, Ibaraki Prefecture (72) Inventor Mitsuo Yamazaki 2565-17, Ishitaki, Takahagi City, Ibaraki Prefecture (72) Inventor Akira Kageyama Nodera, Niiza City, Saitama Prefecture 5-5-8-303 (72) Inventor Aizo Kaneda 2456-47, Kamiyabe-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture (56) References JP-A-4-3438 (JP, A) JP, A) JP-A-5-190022 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/52 H01L 21/58

Claims (16)

(57) [Claims] 1. A method of manufacturing a semiconductor device in which a semiconductor element is bonded to a supporting member, wherein the bonding has a water absorption of 1.5% by volume or less , and
A method for manufacturing a semiconductor device, wherein the method is performed by using a film-shaped die bonding material containing an organic substance and having an elastic modulus at 10 ° C. of 10 MPa or less . 2. A claims, wherein the residual volatile content of the film-form die-bonding material is 3.0 wt% or less
Item 2. A method for manufacturing a semiconductor device according to Item 1 . 3. A method of manufacturing a semiconductor device wherein a semiconductor element is bonded to a support member, wherein said bonding has a residual volatile content of 3.0% by weight or less;
A method of manufacturing a semiconductor device, wherein the method is performed using a film-shaped die bonding material containing an organic substance , the elasticity of which is 50 MPa or less at 10 MPa. 4. A method of manufacturing a semiconductor device for bonding the semiconductor element to the support member, the adhesive is performed by a film-like die bonding material comprising an organic material, the die bonding material, peak of at a later stage the adhesive <br/> Le strength is at 0.5 kgf / 5 mm × 5 mm or more chips, a method of manufacturing a semiconductor device elastic modulus at 250 ° C. is characterized der Rukoto below 10 MPa. 5. A semiconductor according to claim 1, wherein:
In the method of manufacturing the device,  At the stage after the bonding, the inside of the die bonding material and the interface between the die bonding material and the support member
The existing voids have a void volume ratio of 10% or less.
A method for manufacturing a semiconductor device, comprising: 6. The method according to claim 1, wherein the film-like die bonding material comprises
Characterized by containing a resin composition having self-supporting properties ,
A method for manufacturing a semiconductor device according to claim 1 . 7. The method for manufacturing a semiconductor device according to claim 1, wherein the bonding is performed by a film-shaped die bonding material containing an organic material, and the area of the front and back surfaces of the die bonding material is: A method of manufacturing a semiconductor device, wherein the die bonding material does not protrude from between the semiconductor element and the support member in the bonding step. . 8. The method according to claim 1, wherein the film-like die bonding material comprises
Wearing temperature 100-350 ° C, bonding time 0.1-20 seconds, contact
Supporting the semiconductor element with a contact pressure of 0.1 to 30 gf / mm ²
8. The method according to claim 1, which can be bonded to a material.
A method for manufacturing a semiconductor device according to any one of the above . 9. The temperature at which the bonding can be performed is 150 to
250 ° C., the bonding time is 2 seconds
Is less than 4 gf /
9. The method for manufacturing a semiconductor device according to claim 8, wherein the thickness is not more than mm ² . 10. The bonding time is 1.5 times.
Seconds or less and the pressure capable of bonding is 0.3
The method for manufacturing a semiconductor device according to claim 9, wherein the thickness is ² gf / mm ² . 11. A semiconductor for bonding a semiconductor element to a support member.
In the method for manufacturing a device, the bonding includes an organic substance and has an elastic modulus at 250 ° C.
With a film die bonding material of 10MPa or less
It has done, in the film-form die bonding material, the semiconductor element
Is placed at a temperature of 150 ° C. to 250 ° C. for a time of 0.1 second or more 2
At a pressure of 0.1 to 4 gf / mm ² for less than
For bonding the chip to the film die bonding material
A method for manufacturing a semiconductor device, comprising: 12.For the above film die bonding material,
Place the above semiconductor element, temperature 150-250 ℃, time
0.1 second or more and less than 2 seconds, pressure 0.1-4 gf / mm
^Two Then, the semiconductor element is connected to the film-shaped die bond
Claims: It has the process of adhering to a material.
12. The method for manufacturing a semiconductor device according to any one of 9 to 11. 13. The temperature is 150 to 250 ° C.
Serial time is less than 2 seconds, the pressure is 4 gf / mm ² or more
The method of manufacturing a semiconductor device according to claim 12, wherein: 14. The method according to claim 1, wherein the time is 1.5 seconds or less.
Wearing half of claim 13 wherein the 0.3~2gf / mm ²
A method for manufacturing a conductor device. 15. The film-shaped die bonding material is saturated.
The sum of moisture absorption is not more than 1.0% by volume.
A method for manufacturing the semiconductor device according to claim 1.
Law. 16. The film-like die bonding material according to claim 16 ,
16. A method according to claim 1, comprising a single layer.
A method for manufacturing a semiconductor device according to any one of the above.