JP3120100B2 - Semiconductor light emitting device - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a semiconductor light emitting device capable of selectively obtaining incoherent light and laser light.

[Prior art] Conventionally, a semiconductor light emitting element for incoherent light capable of obtaining incoherent light and a semiconductor light emitting element for laser light capable of obtaining laser light are separately prepared,
Then, by selecting the semiconductor light emitting element for incoherent light and the semiconductor light emitting element for laser light,
A semiconductor light emitting device that selectively obtains incoherent light and laser light is used for a measurement light source device.

[Problems to be Solved by the Invention] However, in the case of the above-described conventional semiconductor light emitting device, a semiconductor light emitting element for incoherent light capable of obtaining incoherent light and a semiconductor light emitting device for laser light capable of obtaining laser light It is necessary to prepare two semiconductor light-emitting elements separately from each other, and this has the disadvantage that the semiconductor light-emitting device becomes large.

In the case of the conventional semiconductor light emitting device described above, when incoherent light and laser light are supplied to an optical system common to them, an incoherent light semiconductor light emitting element and an optical system extending between the optical system are provided. Unless two transmission paths are provided, one each for the coherent light transmission path and the laser light transmission path extending between the semiconductor light emitting element for laser light and the optical system, the incoherent light and the laser light must be provided separately. Cannot be selectively supplied to an optical system common to them, and therefore, when incoherent light and laser light are supplied to an optical system common to them, a plurality of supply units are enlarged. , Had the drawback.

[Object of the present invention] Accordingly, an object of the present invention is to propose a novel semiconductor light emitting device that does not have the above-mentioned disadvantages.

[Means for Solving the Problems] The semiconductor light emitting device according to the present invention is intended for (i) either an impurity imparting a first conductivity type or an impurity imparting a second conductivity type opposite to the first conductivity type. A plurality of n first, second,..., Nth incoherent light semiconductor crystal layers which are not introduced or are introduced only at a sufficiently low concentration even if they are introduced, A laser beam in which either the impurity giving the mold or the impurity giving the second conductivity type opposite to the first conductivity type is not intentionally introduced, or is introduced only at a sufficiently low concentration, even if introduced. (Ii) the first incoherent light semiconductor crystal layer is formed on and in contact with the first semiconductor crystal layer, and (iii) the second, 3... N-th semiconductor for incoherent light ,... Are arranged on the first, second... (N-1) -th semiconductor crystal layer for incoherent light in order with a part thereof viewed from above. ... (n-1)
Are formed by laminating through the second, third,..., N-th semiconductor crystal layers, respectively, in a state where they are left as the semiconductor crystal layer portions of (a). (V) a layer formed on the n-th incoherent light semiconductor crystal layer, with a part thereof left as an n-th semiconductor crystal layer portion, with an (n + 1) -th semiconductor crystal layer interposed therebetween; ) On the first, second... N-th semiconductor crystal layer portion and the laser light semiconductor crystal layer, the (n +
(Vi) a reflective surface of the Fabry-Perot that is opposed to the semiconductor crystal layer of (2), and the semiconductor crystal layer of the first incoherent light semiconductor crystal layer has a structure of (vi). And a semiconductor laminate having first and second end faces respectively forming an end face on the semiconductor crystal layer portion side and an end face on the opposite side of the first semiconductor crystal layer portion. The first and second electrode layers are disposed opposite to each other on the second main surface, and the first, second,..., Nth incoherent light semiconductor crystal layers are .. Have the first, second,..., N-th energy band gaps in that order, and the laser light semiconductor crystal layer is smaller in energy band than the n-th incoherent light semiconductor crystal layer. With a gap and (i The first semiconductor crystal layer has a wider energy band gap and a lower refractive index than the first semiconductor crystal layer for incoherent light, has the first conductivity type, and (ii) has the second conductivity type. , Third ...
... The n-th semiconductor crystal layer has a wider energy band than the first and second, the second and third,..., The (n−1) -th and n-th semiconductor crystal layers for incoherent light. An impurity having a gap and a low refractive index, respectively, and providing a first conductivity type or a second impurity opposite to the first conductivity type;
(Iii) the impurity having the first conductivity type is not intentionally introduced or has the first conductivity type.
The semiconductor crystal layer of 1) has a wider energy band gap and a lower refractive index than those of the n-th incoherent light semiconductor crystal layer and the laser light semiconductor crystal layer, and has an impurity that gives the first conductivity type. Alternatively, any of the impurities imparting the second conductivity type opposite to the first conductivity type is not intentionally introduced or has the first conductivity type, and (iv) the (n + 2) -th semiconductor crystal layer Has a wider energy band gap and a lower refractive index than the first to n-th incoherent light semiconductor crystal layers and the laser light semiconductor crystal layer, and has a second conductivity type, An incoherent light electrode layer in which the first electrode layer faces the first to n-th incoherent light semiconductor crystal layers, and a laser light in which the laser beam faces the laser light semiconductor crystal layer. Electrode layer Has, also the first end surface of the semiconductor stacked body and for incoherent light and laser light the light emitting surface.

In this case, the incoherent light electrode layer of the first electrode layer is replaced with the first, second... Nth semiconductor of the first, second... N-th incoherent light semiconductor crystal layer. It is possible to have first, second,..., N-th electrode layers facing the crystal layer.

The first and second... N-th energy band gaps of the first and second... N-th semiconductor crystal layers for incoherent light respectively correspond to the first and second semiconductor crystal layer portions. The band of light emitted, the band of light emitted in the second and third semiconductor crystal layers, and the light bands emitted in the (n-1) and n-th semiconductor crystal layers are mutually opposite. Each of the values can be partially overlapped.

[Operation / Effect] According to the semiconductor light emitting device of the present invention, if a required power supply for incoherent light is connected between the electrode layer for incoherent light of the first electrode layer and the second electrode layer, then A current is supplied from the power supply for incoherent light to the semiconductor laminate, the first semiconductor crystal layer portion of the first semiconductor crystal layer for incoherent light, and the first semiconductor crystal layer portion of the first semiconductor crystal layer; The second semiconductor crystal layer portion of the second semiconductor crystal layer for incoherent light, and the second semiconductor crystal layer of the first semiconductor crystal layer for incoherent light and the second semiconductor crystal layer of the second and first semiconductor crystal layers.
A region under the semiconductor crystal layer portion of the third, the third semiconductor crystal layer portion of the third semiconductor crystal layer for incoherent light, and the second and first regions.
Semiconductor crystal layer for incoherent light and third, second,
A region of the first semiconductor crystal layer below the third semiconductor crystal layer,
... N-th of the n-th incoherent light semiconductor crystal layer
Of the semiconductor crystal layer portion and the (n-1) -th and (n-2) -th
... the first incoherent light semiconductor crystal layer and the n-th semiconductor crystal layer
(N-1)... Flows through a region of the second and first semiconductor crystal layers below the n-th semiconductor crystal layer portion, and in this case, the first, second. The energy band gap of the coherent light semiconductor crystal layer has an energy band gap smaller in that order, and the first, second, and third
... The n-th semiconductor crystal layer has a wider energy band gap than the first and second, second and third... (N-1) and n-th semiconductor crystal layers for incoherent light. In the first, second,..., N-th semiconductor crystal layers for incoherent light, the first, second,. Second ………
Light having a band centered on a wavelength corresponding to the energy band gap of the n-th incoherent light semiconductor crystal layer is generated.

The light generated in the first semiconductor crystal layer portion of the first semiconductor crystal layer for incoherent light is the first, second,...
.. A semiconductor laminate in which the first and second n.sup.th semiconductor crystal layer portions of the n.sup.th incoherent light semiconductor crystal layer form light emitting surfaces for incoherent light and laser light in that order. Have the first, second,..., N-th energy band gaps which are sequentially arranged from the first end face side of the semiconductor laser device in the order of arrangement, and the semiconductor crystal layer for laser light is
The n-th semiconductor crystal layer of the n-th incoherent light semiconductor crystal layer, which is disposed closer to the second end face of the semiconductor laminate than the n-th semiconductor crystal layer portion of the n-th incoherent light semiconductor crystal layer The first, second,..., (N−1) -th semiconductor crystal layers for incoherent light have second, third,..., N-th semiconductor crystals. Optically coupled to the second, third,..., Nth incoherent light semiconductor crystal layers via the layers,
In addition, since the n-th incoherent light semiconductor crystal layer is optically coupled to the laser light semiconductor crystal layer via the (n + 1) -th semiconductor crystal layer, the second semiconductor crystal layer
Although the light component traveling toward the end face side is confined by the first and second semiconductor crystal layers for the first incoherent light semiconductor crystal layer, the light component propagates to the second end face side of the semiconductor laminate. , Are almost absorbed in the second to n-th semiconductor crystal layers for incoherent light and laser light, and hardly reach the second end face.

However, for the light generated in the first semiconductor crystal layer portion of the first semiconductor crystal layer for incoherent light, which is directed toward the first end face of the semiconductor laminate, the first semiconductor crystal layer portion is not used. The light is hardly absorbed therein, propagates by being confined by the first and (n + 2) th semiconductor crystal layers, and reaches the light emitting surfaces for incoherent light and laser light.

The light generated in the second, third,..., N-th semiconductor crystal layer portions of the n-th incoherent light semiconductor crystal layer is the second, third, fourth,. 2 to the end face side, for the same reason as described above, the third to n-th semiconductor crystal layers for incoherent light and the semiconductor crystal layer for laser light, n Incoherent light semiconductor crystal layer and laser light semiconductor crystal layer... are hardly absorbed in the laser light semiconductor crystal layer, and hardly reach the second end face.

However, for the light component directed to the first end face side,
First semiconductor crystal layer for incoherent light, first and second semiconductor crystal layers for incoherent light, first to third semiconductor crystal layers for incoherent light... First to (n
-1) through the incoherent light semiconductor crystal layer, the first and (n + 2)
Are propagated by being confined by the semiconductor crystal layer of the semiconductor device, and reach a light emitting surface for incoherent light and laser light.

For this reason, light generated in the first, second... N-th semiconductor crystal layer portions of the n-th incoherent light semiconductor crystal layer, respectively, is converted into incoherent light as incoherent light. It is obtained by radiating outside from the light emitting surface for coherent light and laser light.

In this case, if the current from the power supply for incoherent light is continuously supplied to the semiconductor laminate, the incoherent light radiated to the outside from the light emitting surface for incoherent light and laser light is first and second. The second,...,... Relatively high luminance can be obtained according to the current flowing in the first, second..., The n-th semiconductor crystal layer portions of the n-th incoherent light semiconductor crystal layer.

Furthermore, incoherent light obtained by radiating from the light emitting surface for incoherent light and laser light to the outside,
Since the light is radiated outside from a local region of an end face of the first semiconductor crystal layer portion of the first semiconductor crystal layer for incoherent light on the light emission surface for incoherent light and laser light, The incoherent light obtained by radiating the light from the light emitting surface for coherent light and the light for laser light to the outside is relatively large depending on the thickness of the first semiconductor crystal layer portion of the first semiconductor crystal layer for incoherent light. Emitted at a narrow emission angle.

Therefore, in the case of the semiconductor light emitting device according to the present invention, incoherent light can be obtained outside from the light emitting surfaces for incoherent light and laser light at a relatively high intensity and a relatively narrow radiation angle.

In this case, the incoherent light electrode layer is opposed to the first, second,..., Nth incoherent light semiconductor crystal layer first, second,. ... N-th electrode layer portion between the first, second,..., N-th electrode layer portions and the second electrode layer. ,... N-th incoherent light power supply can be connected to the first and second... N-th semiconductor crystal layer portions. It is possible to adjust the intensity, and thereby adjust the intensity distribution of the incoherent light with respect to the wavelength of the incoherent light emitted from the incoherent light and laser light emission surfaces.

Further, the first and second... N-th n-th semiconductor crystal layers for incoherent light having the first, second... N-th semiconductor crystal layer portions, respectively. The energy band gap is defined as the band of light generated in each of the first and second semiconductor crystal layers, the band of light generated in each of the second and third semiconductor crystal layers,... (N-1) The first and second light sources are generated within a range in which light bands respectively generated in the n-th semiconductor crystal layer portion and the light bands respectively partially overlap each other.
, Between the second and third energy band gaps,..., Are selected in advance so that a large difference is obtained between the (n-1) th and n-th energy band gaps. The incoherent light obtained by radiating the incoherent light and the laser light to the outside from the light emitting surface can be obtained as having one band having a wide bandwidth.

In the case of the semiconductor light emitting device according to the present invention, the first
Between the laser light electrode layer of the electrode layer and the second electrode layer,
When a required laser light power supply is connected, the current is supplied from the laser light power supply to the semiconductor laminate, the laser light semiconductor crystal layer, the (n + 1) th semiconductor crystal layer, the nth and (n−
1) The second semiconductor crystal layer and the n-th and (n−1) -th semiconductor crystal layers
... Flows through a region of the first incoherent light semiconductor crystal layer below the laser light semiconductor crystal layer, and in this case, the laser light semiconductor crystal layer forms the first to n-th incoherent light. Semiconductor crystal layer and second to (n + 1) th
Has an energy band gap smaller than that of the semiconductor crystal layer, substantially, light having a band centered on a wavelength corresponding to the energy band gap is generated in the semiconductor crystal layer for laser light. .

The light generated in the semiconductor crystal layer for laser light is such that the first, second,..., N-th semiconductor crystal layers for incoherent light have a wider energy band gap than the semiconductor crystal layer for laser light. And in that order have a wide energy bandgap, and, as described above,
Second to third (n−1) th incoherent light semiconductor crystal layers via the second and third... Nth semiconductor crystal layers, second and third... Nth incoherent light The n-th incoherent light semiconductor crystal layer is optically coupled to the laser light semiconductor crystal layer via the (n + 1) -th semiconductor crystal layer. Therefore, the first and nth incoherent light semiconductor crystal layers are hardly absorbed by the laser light semiconductor crystal layer and the first to n-th incoherent light semiconductor crystal layers for the light component directed to the first end face side of the semiconductor laminate. The semiconductor layer is confined by the (n + 2) semiconductor crystal layer and finally propagates through the first semiconductor crystal layer for incoherent light to the first end face side of the semiconductor laminate, and then the first end face And reflected on the second end face side by the first incoherent For the light component that passes through the semiconductor crystal layer for semiconductor light and that is directed to the second end face side of the semiconductor laminate, the semiconductor crystal layer for laser light is used for the same reason as described above. And the first to n-th semiconductor crystal layers for incoherent light are hardly absorbed,
Being confined by the first and (n + 2) th semiconductor crystal layers and finally propagating to the second end face side of the semiconductor laminate through the first incoherent light semiconductor crystal layer;
Next, the light is reflected at the second end face, and is directed to the first end face side through the first incoherent light semiconductor crystal layer.

Therefore, if a current from the laser light power supply is continuously applied to the semiconductor laminate, laser oscillation occurs, and the laser light is externally transmitted from the incoherent light and laser light emission surfaces. Is radiated.

Therefore, in the case of the semiconductor light emitting device according to the present invention, laser light can be obtained outside from the light emitting surfaces for incoherent light and laser light.

As described above, in the case of the semiconductor light emitting device according to the present invention, the incoherent light and the laser light can be externally obtained from the same incoherent light and laser light emission surfaces with one element configuration.

Therefore, the size of the semiconductor light emitting device can be significantly reduced as compared with the above-described conventional semiconductor light emitting device.

Further, when the incoherent light and the laser light are supplied to a common optical system, a common transmission path can be used for the incoherent light and the laser light. Means for supplying a common optical system can be significantly simplified and downsized as compared with the conventional semiconductor light emitting device described above.

Embodiment 1 Next, a first embodiment of a semiconductor light emitting device according to the present invention will be described with reference to FIGS.

The semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4 has the following configuration.

That is, for example, a semiconductor crystal substrate 1 having an n-type,
A semiconductor crystal layer 2 formed on and in contact with semiconductor crystal substrate 1 and having the same n-type as semiconductor crystal substrate 1; and an impurity or p-type formed on semiconductor crystal layer 2 and in contact with and providing n-type. It has an incoherent light semiconductor crystal layer 3A in which none of the impurities is intentionally introduced or is introduced only at a sufficiently low concentration even if it is introduced. In this case, the semiconductor crystal layer 2
It has a wider energy band gap and a lower refractive index than the incoherent light semiconductor crystal layer 3A.

Further, it has a semiconductor crystal layer 2 'corresponding to the semiconductor crystal layer 2 formed on the semiconductor crystal layer 3A. In this case, the semiconductor crystal layer 2 'has a wider energy band gap and a lower refractive index than the semiconductor crystal layer 3A for incoherent light and the semiconductor crystal layer 3B for laser light described below, and has a relatively small thickness. And an n-type impurity or p in a region below the semiconductor crystal layer 3B for laser light.
No type-imparting impurity is intentionally introduced or the n-type semiconductor crystal layer 2C 'is intentionally introduced, and in the other region, either the n-type impurity or the p-type impurity is intentionally introduced. Or a semiconductor crystal layer 2D 'having a p-type. In the figure, the semiconductor crystal layer 2C 'is shown as having n-type, and the semiconductor crystal layer 2D' is shown as having p-type.

Furthermore, on the semiconductor crystal layer 3A for incoherent light,
The end face 11a of the semiconductor stack 10 to be described later semiconductor crystal layer portion M ₁
The state in which the left as the semiconductor crystal layer portion M ₁ side, is formed by laminating via the 'semiconductor crystal layer 2C' of the semiconductor crystal layer 2 as described above, having a semiconductor crystal layer 3B laser beam. In this case, the semiconductor crystal layer for laser light 3B has a smaller energy band gap than the semiconductor crystal layer for incoherent light 3A.

The semiconductor crystal layer 20 has a wider energy band gap and a p-type than the semiconductor crystal layer 3A described above, and is formed on the semiconductor crystal layer 3B for laser light.

Further, the semiconductor crystal substrate 1, the semiconductor crystal layer 2, the semiconductor crystal layer 3A for incoherent light, the semiconductor crystal layer 2 ', the semiconductor crystal layer 3B for laser light, and the semiconductor crystal layer 20
As apparent from FIGS. 3 and 4, a semiconductor laminated body having a
Grooves 21L and 21R are formed extending between the end faces 11a and 11b and having a depth that terminates in the semiconductor crystal layer 2 or the semiconductor crystal substrate 1 (terminates in the semiconductor crystal layer 2 in the figure). ing.

Further, the p is formed so as to extend in the groove 21L and on the surface opposite to the groove 21R side when viewed from the groove 21L of the semiconductor crystal layer 20.
A semiconductor crystal layer 6L having a p-type, and a semiconductor crystal layer 6R having a p-type which is formed in the groove 21R, and extending on a surface opposite to the groove 21L side as viewed from the groove 21R of the semiconductor crystal layer 20. , And n-type semiconductor crystal layers 7L and 7R formed to extend on semiconductor crystal layers 6L and 6R, respectively.

Also, in the regions between the grooves 21L and 21R of the semiconductor crystal layer 20, in on the semiconductor crystal layer portion M ₁ of the coherent light for semiconductor crystal layer 3A, and the laser light for semiconductor crystal layer 3B, the semiconductor crystal layer 2D ' , 20 and the semiconductor crystal layer 4 continuously formed on the semiconductor crystal layers 7L and 7R described above. In this case, the semiconductor crystal layer 4 has a wider energy band gap and a lower refractive index than the semiconductor crystal layer 3A for incoherent light and the semiconductor crystal layer 3B for laser light, and has a p-type.

Further, on the semiconductor crystal layer 4 are formed to face the semiconductor crystal layer unit M ₁ and the semiconductor crystal layer 3B laser beam incoherent light semiconductor crystal layer 3A, incoherent light from the semiconductor crystal layer 6 And a semiconductor crystal layer for laser light 6B.

Further, it has an incoherent light electrode layer 15A and a laser light electrode layer 15B of the electrode layer 15 formed on the incoherent light semiconductor crystal layer part 6A and the laser light semiconductor crystal layer part 6B, respectively.

Further, it has an electrode layer 16 formed on a surface of the semiconductor crystal substrate 1 opposite to the semiconductor crystal layer 2 side.

Further, the above-described semiconductor crystal substrate 1, semiconductor crystal layer 2,
The semiconductor laminated body 10 having the semiconductor crystal layer 3A for incoherent light, the semiconductor crystal layer 3B for laser light, the semiconductor crystal layers 6L, 6R, 7L and 7R, and the semiconductor crystal layers 4, 6A and 6B has an end face.
An anti-reflection film 13 is formed on the end face 11a so as to make it an emission surface 12 for incoherent light and laser light.

The above is the configuration of the first embodiment of the semiconductor light emitting device according to the present invention.

The semiconductor light emitting device according to the present invention having such a configuration can be manufactured as described below with reference to FIGS. 5 to 24.

That is, as shown in FIGS. 5 to 8, the above-described semiconductor crystal layer 2, the above-described semiconductor crystal layer 3A for incoherent light, and the above-mentioned semiconductor crystal layer 2 are formed on the above-mentioned semiconductor crystal substrate 1. The semiconductor crystal layer 2X ′, the semiconductor crystal layer 3BX to be the above-described semiconductor crystal layer 3B for laser light, and the semiconductor crystal layer 20X to be the above-described semiconductor crystal layer 20 are formed by stacking them in this order by epitaxial growth. .

Next, a known etching process using a mask for the semiconductor crystal layers 20X and 3BX is performed by a known etching process.
As shown in FIG. 12, the above-described semiconductor crystal layer 20 and laser light semiconductor crystal layer 3B are formed from the semiconductor crystal layers 20X and 3BX, respectively.

Next, a semiconductor crystal substrate 1, a semiconductor crystal layer 2, a semiconductor crystal layer 3A for incoherent light, and a semiconductor crystal layer 2X '
And a semiconductor laminated body having the semiconductor crystal layer 3B for laser light and the semiconductor crystal layer 20, from the upper surface side thereof, FIGS.
As shown in FIG. 16, grooves 21L and 21R extending parallel to each other are formed.

Next, a semiconductor crystal substrate 1, a semiconductor crystal layer 2, a semiconductor crystal layer 3A for incoherent light, and a semiconductor crystal layer 2X '
On the semiconductor laminated body having the semiconductor crystal layer 3B for laser light and the semiconductor crystal layer 20, the semiconductor crystal layers 6L and 6R, and the semiconductor crystal layers 7L and 7R, so as to fill the grooves 21L and 21R, The steps of forming the layers by the epitaxial growth method are performed in that order. At this time, the semiconductor crystal layers 6L and 6R, and 7L and 7R are
Although they do not grow on the region between L and 21R due to their small area, they do not grow on the region of the semiconductor crystal layers 2X 'and 20 on the side opposite to the groove 21R when viewed from the groove 21L and on the groove 21R when viewed from the groove 21R.
The semiconductor crystal layers 6L and 6R, and 7L are grown on the region on the side opposite to the side due to their large area.
And 7R are extended in the grooves 21L and 21R and in the region opposite to the 21R side when viewed from the groove 21L of the semiconductor crystal layer 2X ′ and 20 and on the region opposite to the groove 21L side when viewed from the groove 21R. Is formed.

Subsequently, as shown in FIGS. 17 to 20, the semiconductor crystal layer
7L and 7R, and grooves 21L and 21R of semiconductor crystal layers 20X and 20
The semiconductor crystal layer 4 described above and the semiconductor crystal layer 6X that becomes the semiconductor crystal layer 6 having the semiconductor crystal layers 6A and 6B are stacked and formed in that order by an epitaxial growth method on the region between them. In this case, the semiconductor crystal layer 2X '
The region in contact with the semiconductor crystal layer 4 is formed by introducing p-type impurities from the semiconductor crystal layer 4 into the region.
Thus, the semiconductor crystal layer 2X 'having the above-described semiconductor crystal layers 2C' and 2D 'is formed from the semiconductor crystal layer 2X'.

Next, as shown in FIGS. 21 and 22, the semiconductor crystal layer
On 6X, the above-described incoherent light electrode layer 15A and laser light electrode layer 15B are formed, and then or before,
As shown in FIGS. 23 and 24, the above-described semiconductor crystal layers 6A and 6B are formed from the semiconductor crystal layer 6X by an etching process on the semiconductor crystal layer 6X.

Next, although not shown, an electrode layer 16 is formed on a surface of the semiconductor crystal substrate 1 opposite to the semiconductor crystal layer 2 side. Next, the semiconductor crystal substrate 1 and the semiconductor crystal layer 2 A semiconductor crystal layer 3A, a semiconductor crystal layer 4, a laser light semiconductor crystal layer 3B, and semiconductor crystal layers 20, 4, 6A and 6B;
Incoherent light electrode layer 15A and laser light electrode layer 1
The laminate having 5B and the electrode layer 16 is cleaved to form opposed end faces 11a and 11b, and the antireflection film 13 is formed on one of the end faces 11a.

The above is the embodiment of the method for manufacturing the semiconductor light emitting device according to the present invention described above with reference to FIGS.

The configuration of the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4 has been clarified.

According to the first embodiment of the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4 having such a configuration, as is clear from the section described in the section of [Action and Effect], the electrode layer If a required power supply for incoherent light is connected between the 15 incoherent light electrode layers 15A and the electrode layer 16,
From the incoherent light power, current, to the semiconductor stack 10, through a region of the semiconductor crystal layer of the semiconductor crystal layer unit M ₁ and the semiconductor crystal layer 2 M ₁ under the semiconductor crystal layer 3A for incoherent light In this case, since the semiconductor crystal layer 2 has a wider energy band gap than the semiconductor crystal layer 3A for incoherent light, the semiconductor crystal layer portion M of the semiconductor crystal layer 3A for incoherent light is substantially formed. ₁
In this case, light having a band centered on a wavelength corresponding to the energy band gap E _gM1 of the incoherent light semiconductor crystal layer 3A is generated.

Then, the light generated in the semiconductor crystal layer portion M ₁ of the incoherent light semiconductor crystal layer 3A, a semiconductor crystal layer portion M ₁ of the semiconductor crystal layer 3A for the incoherent light is incoherent light and for laser Hikari Mitsumochi radiation arranged on the end face 11b of the semiconductor laminated body 10 forming the surface 12, the laser beam semiconductor crystal layer 3B is a semiconductor laminated body than the semiconductor crystal layer portion M ₁ of the incoherent light semiconductor crystal layer 3A has a smaller energy band gap and compared to the semiconductor crystal layer portion M ₁ of the incoherent light semiconductor crystal layer 3A disposed on the 10 end face 11b side of the further semiconductor crystal layer 3A is for incoherent light,
Since the semiconductor crystal layer 2 'is optically coupled to the semiconductor crystal layer 3B for laser light via the semiconductor crystal layer 2C' of the semiconductor crystal layer 2 ', the light component directed toward the end face 11b of the semiconductor laminate 10 is incoherent light. The semiconductor crystal layer 3A is divided into the semiconductor crystal layers 2, 2 '.
End face 11 of semiconductor laminate 10 confined by
Although it propagates to the b side, it is almost absorbed in the semiconductor crystal layer 3B for laser light and hardly reaches the end face 11b.

However, the semiconductor crystal layer for incoherent light 3A
The semiconductor light generated in the crystal layer unit M _1, for the light fraction toward the end face 11a of the semiconductor stack 10, the semiconductor crystal layer portion M ₁ for the incoherent light semiconductor crystal layer 3A, is hardly absorbed in which Instead, it is confined and propagated by the semiconductor crystal layers 2, 2 'and 4, and reaches the light emitting surface 12 for incoherent light and laser light.

Therefore, light generated in the semiconductor crystal layer portion M ₁ of the incoherent light semiconductor crystal layer 3A is as incoherent light having an intensity versus wavelength as shown in FIG. 25, for incoherent light and laser Hikari Mitsumochi radiation Obtained by radiating from the surface 12 to the outside.

In this case, if a current from the power supply for incoherent light is continuously supplied to the semiconductor laminate 10, the incoherent light radiated from the light emitting surface 12 for incoherent light and laser light to the outside is incoherent. depending on the current flowing in the semiconductor crystal layer portion M ₁ of the coherent light for semiconductor crystal layer 3A,
Obtained with relatively high brightness.

Furthermore, the incoherent light obtained by radiating the incoherent light and the laser light from the light emitting surface 12 to the outside is formed of the incoherent light semiconductor crystal layer 3A on the incoherent light and the laser light emitting surface 12. because it is light emitted to the outside from the local area of the end face of the semiconductor crystal layer unit M _1, incoherent light obtained by radiating the incoherent-light and laser light the light emitting surface 12 to the outside, in depending on the semiconductor thickness of the crystal layer portion M ₁ of the coherent light for semiconductor crystal layer 3A, it is emitted in a relatively narrow radiation angle.

Therefore, according to the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4, the incoherent light is emitted from the light emitting surface 12 for incoherent light and the laser light to the outside with relatively high intensity and comparison. It can be obtained with a narrow radiation angle.

According to the semiconductor light emitting device of the present invention shown in FIGS. 1 to 4, if a required laser light power source is connected between the laser light electrode layer 15B of the electrode layer 15 and the electrode layer 16, From the laser power supply, current is applied to the semiconductor laminate 10 to the semiconductor crystal layer 3B for laser light, the semiconductor crystal layer 2C 'under the semiconductor crystal layer 3B for laser light of the semiconductor crystal layer 2', and the Semiconductor crystal layer 3B for laser light of semiconductor crystal layer 3A
It flows through the lower region, and in this case, the semiconductor crystal layer for laser light 3B is the semiconductor crystal layer for incoherent light.
Since it has an energy band gap smaller than that of the semiconductor crystal layer 3A and the semiconductor crystal layer 2 ', the semiconductor crystal layer 3B for laser light substantially has a band centered on a wavelength corresponding to the energy band gap. Light is generated.

The light generated in the semiconductor crystal layer for laser light 3B is such that the semiconductor crystal layer for incoherent light 3A has a wider energy band gap than the semiconductor crystal layer for laser light 3B and Since light is coupled to the semiconductor crystal layer 3B for laser light via the semiconductor crystal layer 2C ', light traveling toward the end face 11a of the semiconductor laminate 10 forming the light emitting surface 12 for incoherent light and laser light. For minutes,
The semiconductor crystal layer for laser light 3B and the semiconductor crystal layer for incoherent light 3A are confined by the semiconductor crystal layers 2, 2 'and 4 with little absorption, and finally, the semiconductor crystal layer for incoherent light 3A And propagates to the end face 11a side of the semiconductor laminated body 10 and then reflects on the end face 11a, and on the end face 11b side, the semiconductor crystal layer 3 for incoherent light.
The light component traveling through A and traveling toward the end face 11b of the semiconductor multilayer body 10 is irradiated with the laser light semiconductor crystal layer 3B and the incoherent light beam for the same reason as described above. Semiconductor crystal layer 3A is hardly absorbed and confined by semiconductor crystal layers 2, 2 'and 4, and finally passes through incoherent light semiconductor crystal layer 3A to end face 11b side of semiconductor laminate 10. The light propagates, and then is reflected by the end face 11b and travels toward the end face 11a through the incoherent light semiconductor crystal layer 3A.

For this reason, if a current from a laser light power supply is continuously applied to the semiconductor laminate 10, laser oscillation occurs, and based on that, laser light having an intensity with respect to a wavelength as shown in FIG. 26 is generated. , And is radiated outside from the light emitting surface 12 for incoherent light and laser light.

Therefore, according to the semiconductor light emitting device of the present invention shown in FIGS. 1 to 4, laser light can be obtained from the light emitting surface 12 for incoherent light and laser light to the outside.

As described above, according to the semiconductor light emitting device of the present invention shown in FIGS. 1 to 4, with one element configuration, the incoherent light and the laser light emit the same incoherent light and laser light. It can be obtained from the surface 12 to the outside.

Therefore, the size of the semiconductor light emitting device can be significantly reduced as compared with the above-described conventional semiconductor light emitting device.

Further, when the incoherent light and the laser light are supplied to a common optical system, a common transmission path can be used for the incoherent light and the laser light. The means for supplying an optical system common to them can be significantly simplified and downsized as compared with the conventional semiconductor light emitting device described above.

Second Embodiment Next, a second embodiment of the semiconductor light emitting device according to the present invention will be described with reference to FIGS. 27 and 28.

27 and 28, parts corresponding to those in FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof will be omitted.

The semiconductor light emitting device according to the present invention shown in FIGS. 27 and 28 has the same configuration as the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4, except for the following.

That is, the semiconductor crystal layer for incoherent light 3A 'is provided between the semiconductor crystal layer 2' and the semiconductor crystal layer for laser light 3B.
And a semiconductor crystal layer 2 ″ similar to the semiconductor crystal layer 2 ′,
They are stacked and interposed in that order.

In this case, the incoherent light semiconductor crystal layer 3A '
Is the incoherent light semiconductor crystal layer 3A, in a state of leaving Department of the end face 11a side as the semiconductor crystal layer unit M _1, is formed through a 'semiconductor crystal layer 2C' of the semiconductor crystal layer 2, Further, the semiconductor crystal layer 3B laser beam is a semiconductor crystal layer 3A for incoherent light 'on the part of the end surface 11a side in a state of leaving as a semiconductor crystal layer unit M _1, the semiconductor crystal layer 2' corresponding to The semiconductor crystal layer 2 ″ is formed via the semiconductor crystal layer 2C ″. In this case, the semiconductor crystal layer 2 ″ corresponds to the semiconductor crystal layer 2 ′, as described above, and therefore, the impurity or the p-type that gives n-type in the region below the semiconductor crystal layer 3 </ b> B for laser light. No impurity is intentionally introduced or the n-type semiconductor crystal layer 2C "is not intentionally introduced, and neither an impurity imparting n-type nor an impurity imparting p-type is intentionally introduced in other regions. Or semiconductor crystal layer 2D ″ having p-type
And In the figure, the semiconductor crystal layer 2C ″ is n
And the semiconductor crystal layer 2D ″ is shown as having p-type.

Further, the incoherent light semiconductor crystal layer 6A of the semiconductor crystal layer 6, the semiconductor crystal layer unit M ₁ and the incoherent light semiconductor crystal layer of the incoherent light semiconductor crystal layer 3A
Are respectively opposed to the semiconductor crystal layer portion M ₂ of 3A ', made shall mutually with the separated semiconductor crystal layer portion Q ₁ and Q _2, further incoherent light electrode layer 15 of the electrode layer 15
A have been made to have a mutually separated electrode layer portions E ₁ and E ₂ are arranged on the semiconductor crystal layer portion Q ₁ and Q ₂ of the incoherent light semiconductor crystal layer 6A.

Further, the semiconductor crystal layers for incoherent light 3A and 3A
A ′, and thus their respective semiconductor crystal layer portions M ₁ and M
₂ both have a larger energy band gap than the semiconductor crystal layer for laser light 3B, but have smaller energy band gaps E _gM1 and E _{gM2 in} that order.

The above is the configuration of the second embodiment of the semiconductor light emitting device according to the present invention.

According to the semiconductor light emitting device according to the present invention having such a configuration, the semiconductor light emitting device according to the present invention described above with reference to FIGS. As is clear, FIG.
According to the case of the semiconductor light emitting device according to the present invention described above with reference to FIG. 4, a required space between the electrode layer portion E ₁ (or E ₂ ) of the electrode layer 15A for the incoherent light and the electrode layer 16 is provided. by connecting the power supply incoherent light from its incoherent light power, current, to the semiconductor stack 10, the semiconductor crystal layer 3A for the incoherent light semiconductor crystal layer unit M ₁ and the semiconductor crystal layer 2 semiconductor crystal semiconductor crystal layer of the layer unit M ₁ under the region (or incoherent light semiconductor crystal layer 3A '
M ₂ , and the region of the incoherent light semiconductor crystal layer 3A and the semiconductor crystal layers 2 ′ and ₂ below the semiconductor crystal layer portion M2 of the incoherent light semiconductor crystal layer 3A ′).
In this case, the semiconductor crystal layer for incoherent light is used.
3A and 3A 'have a smaller energy band gap in that order, and the semiconductor crystal layers 2 and 2' have a wider energy band gap than the semiconductor crystal layers 3A and 3A 'for incoherent light. Substantially, in the semiconductor crystal layer portion M ₁ of the semiconductor crystal layer for incoherent light 3 A (or the semiconductor crystal layer portion M ₂ of the semiconductor crystal layer for incoherent light 3 A ′ M ₂ ), Energy band gap E of semiconductor crystal layer M ₁
light is generated with a band centered at a wavelength corresponding to _GM1 (or energy band gap E _GM2 semiconductor crystal layer portion M ₂ of the incoherent light semiconductor crystal layer 3A ').

The light generated in the semiconductor crystal layer portion M _{1 of the} incoherent light semiconductor crystal layer 3A (or the semiconductor crystal layer portion M _{2 of the} incoherent light semiconductor crystal layer 3A ′) is 3A and 3A are semiconductor crystal layer unit M ₁ and M ₂ of 'are sequentially arranged from the end face 11b of the semiconductor laminated body 10 forming the incoherent-light and laser light the light emitting surface 12 on their order and the sequence It has a sequentially smaller energy band gap in order, and the semiconductor crystal layer 3B for laser light is the semiconductor crystal layer 3 for incoherent light.
Side surface 1b of the semiconductor stack 10 than the semiconductor crystal layer portion M ₂ of the A '
Side semiconductor crystal layer 3A 'for incoherent light
It has a smaller energy band gap than the a semiconductor crystal layer unit M _2, further for incoherent light semiconductor crystal layer
3A is optically coupled to the semiconductor crystal layer for incoherent light 3A 'via the semiconductor crystal layer 2C' of the semiconductor crystal layer 2 ',
Further, since the semiconductor crystal layer 3A 'for incoherent light is optically coupled to the semiconductor crystal layer 3B for laser light via the semiconductor crystal layer 2 ", the light component traveling toward the end face 11b of the semiconductor laminate 10 is reduced. Is a semiconductor crystal layer for incoherent light
3A is confined by the semiconductor crystal layers 2 and 2 ′ and propagates to the end face 11 b side of the semiconductor laminated body 10, but is almost absorbed in the incoherent light semiconductor crystal layer 3 A ′ and the laser light semiconductor crystal layer 3 B. And hardly reaches the end face 11b.

However, the semiconductor crystal layer for incoherent light 3A
Of the light generated in the semiconductor crystal layer portion M ₁ of the semiconductor laminated body 10 (or the semiconductor crystal layer portion M ₂ of the semiconductor crystal layer 3A ′ for incoherent light) toward the end face 11a side of the semiconductor laminate 10 is incoherent light Semiconductor crystal layer part M of semiconductor crystal layer 3A for semiconductor
₁ is confined and propagated by the semiconductor crystal layers 2, 2 'and 4 while being hardly absorbed therein, and reaches the light emitting surface 12 for incoherent light and laser light.

For this reason, light generated in the semiconductor crystal layer portion M _{1 of the} semiconductor crystal layer 3A for incoherent light (or the semiconductor crystal layer portion M ₂ of the semiconductor crystal layer 3A ′ for incoherent light) is converted into incoherent light as incoherent light. It is obtained by radiating outside from the light emitting surface 12 for light and laser light.

In this case, if a current from the power supply for incoherent light is continuously supplied to the semiconductor laminate 10, the incoherent light radiated from the light emitting surface 12 for incoherent light and laser light to the outside is incoherent. depending on the current flowing in the semiconductor crystal layer portion M ₁ of the coherent light for semiconductor crystal layer 3A,
Obtained with relatively high brightness.

Furthermore, the incoherent light obtained by radiating the incoherent light and the laser light from the light emitting surface 12 to the outside is formed of the incoherent light semiconductor crystal layer 3A on the incoherent light and the laser light emitting surface 12. because it is light emitted to the outside from the local area of the end face of the semiconductor crystal layer unit M _1, incoherent light obtained by radiating the incoherent-light and laser light the light emitting surface 12 to the outside, in depending on the semiconductor thickness of the crystal layer portion M ₁ of the coherent light for semiconductor crystal layer 3A, it is emitted in a relatively narrow radiation angle.

Therefore, even in the case of the semiconductor light emitting device according to the present invention shown in FIGS. 27 and 28, the incoherent light is emitted from the light emitting surface 12 for incoherent light and the laser light to the outside with relatively high intensity and comparison. It can be obtained with a narrow radiation angle.

According to the semiconductor light emitting device of the present invention shown in FIGS. 27 and 28, if a required laser light power source is connected between the electrode layer 15B for the laser light of the electrode layer 15 and the electrode layer 16, A current is supplied from the laser light power supply to the semiconductor laminated body 10 into the semiconductor crystal layer 3B for the laser light, the semiconductor crystal layers 2C "and 2C under the semiconductor crystal layers 3B for the laser light of the semiconductor crystal layers 2" and 2 '.
C ′, and semiconductor crystal layers 3A ′ and 3 for incoherent light
A flows through the region under the semiconductor crystal layer 3B for laser light of A,
In this case, since the semiconductor crystal layer 3B for laser light has a smaller energy band gap than the semiconductor crystal layers 3A and 3A 'for incoherent light and the semiconductor crystal layers 2' and 2 ", Specifically, light having a band centered on a wavelength corresponding to the energy band gap is generated in semiconductor crystal layer 3B for laser light.

Then, the light generated in the semiconductor crystal layer for laser light 3B, the semiconductor crystal layers for incoherent light 3A and 3A ',
The semiconductor crystal layer 3A for the incoherent light has a wider energy band gap than the semiconductor crystal layer 3B for the laser beam and has a wider energy band gap in that order. Semiconductor crystal layer
Optically coupled to the semiconductor crystal layer for incoherent light 3A 'via the semiconductor crystal layer 2C' for the laser light via the semiconductor crystal layer 2C 'of the semiconductor crystal layer 2 ". Since the optical component is optically coupled to the semiconductor crystal layer 3B, the light component directed toward the end face 11a of the semiconductor laminate 10 forming the light emitting surface 12 for incoherent light and laser light, The layer 3B and the incoherent light semiconductor crystal layers 3A and 3A 'are confined by the semiconductor crystal layers 2, 2' and 4 with little absorption, and finally pass through the incoherent light semiconductor crystal layer 3A. Propagates to the end face 11a side of the semiconductor laminated body 10 and then reflects at the end face 11a, and faces the end face 11b side through the semiconductor crystal layer 3A for incoherent light.
For the light component directed to the end face 11b side of 10, the laser light semiconductor crystal layer 3B and the incoherent light semiconductor crystal layers 3A and 3A '
Is almost not absorbed and is confined by the semiconductor crystal layers 2, 2 'and 4, and finally passes through the incoherent light semiconductor crystal layer 3A and the end face 11 of the semiconductor laminated body 10.
Propagation to the b side, then reflected at its end face 11b, end face 11a
To the side through the incoherent light semiconductor crystal layer 3A.

For this reason, if a current from a laser light power supply is continuously applied to the semiconductor laminate 10, laser oscillation occurs, and the laser light based on the laser light is emitted to the incoherent light and laser light emission surfaces 12 Radiated to the outside.

Therefore, in the case of the semiconductor light emitting device according to the present invention shown in FIGS. 27 to 28, similarly to the case of the semiconductor light emitting device according to the present invention described above with reference to FIGS. From the light emitting surface 12 for laser light and laser light.

From the above, in the case of the semiconductor light emitting device according to the present invention shown in FIGS. 27 to 28, as in the case of the semiconductor light emitting device according to the present invention described above with reference to FIGS. Thus, the incoherent light and the laser light can be obtained from the same incoherent light and laser light emission surface 12 to the outside.

Therefore, the size of the semiconductor light emitting device can be significantly reduced as compared with the above-described conventional semiconductor light emitting device.

Further, when the incoherent light and the laser light are supplied to a common optical system, a common transmission path can be used for the incoherent light and the laser light. Means for supplying a common optical system can be significantly simplified and downsized as compared with the conventional semiconductor light emitting device described above.

Further, according to the semiconductor light-emitting device according to the present invention shown in FIG. 27-FIG. 28, between the respective electrode layers 16 of the electrode layer portions E ₁ and E ₂ of the incoherent light electrode layer 15A of each other by connecting the power supply incoherent light, to obtain a light emitting respectively the semiconductor crystal layer portion M ₂ of the semiconductor crystal layer unit M ₁ and the incoherent light semiconductor crystal layer 3A of the incoherent light semiconductor crystal layer 3A ' Can do, so
Together we can be obtained by radiating two incoherent light having mutually different wavelengths from central incoherent light and for laser-light emitting surface 12 to the outside at the same time, emitting respectively the semiconductor crystal layer unit M ₁ and M ₂ The light intensity can be individually adjusted, and therefore, the intensity distribution with respect to the wavelength of the incoherent light emitted from the incoherent light and laser light emission surfaces can be adjusted.

Further, the semiconductor crystal layers for incoherent light 3A and 3A
Each energy band gap E _GM1 and E _GM2 semiconductor crystal layer unit M ₁ and M ₂ of A ', the semiconductor crystal layer unit M ₁ and M ₂
In the range in which the light bands generated respectively partially overlap each other, if the energy band gaps E _gM1 and E _gM2 are selected in advance so that a large difference is obtained, the incoherent light and the laser Incoherent light obtained by radiating light from the light emitting surface 12 to the outside can be obtained as one having a wide band as shown in FIG.

In the embodiment of the semiconductor light emitting device according to the present invention described above with reference to FIGS. 1 to 28, the case where the number of the semiconductor crystal layers for incoherent light is one and the case where the number is two are described. Means for Solving the Problems], three or more semiconductor crystal layers for incoherent light can be provided to obtain three or more incoherent lights.

When the semiconductor crystal layer for incoherent light has a plurality of first, second,... Semiconductor crystal layers for incoherent light, both end faces of the first semiconductor crystal layer for incoherent light are end faces. The second and third... Incoherent light semiconductor crystal layers are shown on 11a and 11b, respectively.
The incoherent light electrode layer 15A may not have to be formed on 11a and 11b, and may have one electrode layer portion common to the plurality of incoherent light semiconductor crystal layers.

Further, the semiconductor crystal layers 2D and 2D 'of the semiconductor crystal layers 2' and 2 "
And 2D ″ may be omitted.

Further, in the above-described embodiment of the semiconductor light emitting device according to the present invention, “n-type” may be replaced with “p-type”, and “p-type” may be replaced with “n-type”. Various changes and modifications could be made without departing from the spirit.

[Brief description of the drawings]

FIGS. 1, 2, 3 and 4 are schematic plan views showing a first embodiment of a semiconductor light emitting device according to the present invention, a sectional view taken along line 2-2, and a line taken along line 3-3. 4A and 4B are sectional views taken along line 4-4. FIGS. 5, 6, 7, and 8 show an embodiment of the method of manufacturing the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4, and are substantially linear planes in the first step. Figure 6-6
FIG. 8 is a cross-sectional view taken along line 7-7, a cross-sectional view taken along line 7-7, and a cross-sectional view taken along line 8-8. 9, 10, 11 and 12 show an embodiment of the method for manufacturing the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4. Figure 10-10
It is sectional drawing on the line, sectional drawing on the line 11-11, and sectional drawing on the line 12-12. 13, 14, 15 and 16 show an embodiment of the method for manufacturing the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4. Figure 14-14
It is sectional drawing on the line, sectional drawing on the line 15-15, and sectional drawing on the line 16-16. FIGS. 17, 18, 19 and 20 show an embodiment of the method for manufacturing the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4, and are substantially linear planes in the fourth step. Figure, 18-18
21 is a sectional view taken along a line, a sectional view taken along a line 19-19, and a sectional view taken along a line 20-20. FIGS. 21 and 22 are schematic plan views showing a fifth embodiment of the method for manufacturing the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4, and FIGS. It is sectional drawing. FIGS. 23 and 24 are schematic plan views showing the embodiment of the method for manufacturing the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4 in the sixth step, taken along line 24-24. It is sectional drawing. FIG. 25 is provided for explaining the first embodiment of the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4 and is obtained by radiating the light from the light emitting surface for incoherent light and laser light to the outside. FIG. 5 is a diagram illustrating a relationship between the wavelength of incoherent light and the intensity. FIG. 26 is provided for explaining the first embodiment of the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4 and is obtained by radiating outside from the light emitting surface for incoherent light and laser light. FIG. 4 is a diagram illustrating a relationship between the intensity of laser light and the wavelength. 27 and 28 are a schematic plan view and a cross-sectional view taken along line 28-28 showing a second embodiment of the semiconductor light emitting device according to the present invention. FIG. 29 is provided for explaining the second embodiment of the semiconductor light emitting device according to the present invention shown in FIG. 27 and FIG. 28, and is obtained by radiating outside from the light emitting surface for incoherent light and laser light. FIG. 5 is a diagram illustrating a relationship between the wavelength of incoherent light and the intensity. 1. Semiconductor crystal substrate 2, 2 ′, 2 ″, 3, 4, 6 Semiconductor crystal layer 3A Semiconductor crystal layer for incoherent light 3B Semiconductor crystal layer for laser light 4A, 4B Semiconductor Crystal layers 6A, 6B ... Semiconductor crystal layers 6L, 6R, 7L, 7R ... Semiconductor crystal layers 10 ... Semiconductor laminates 11a, 11b ... End faces 12 ... Light emitting surfaces for incoherent light and laser light 13 ... … Anti-reflection film 15, 16… Electrode layer 15A… Incoherent light electrode layer 15B… Laser light electrode layer 21L, 21R… Groove M ₁ -M ₂ …… Incoherent light semiconductor crystal layer 3A Semiconductor crystal layer portions E _{1 to} E ₂ … Electrode layer portions Q ₁ and Q _{2 of} electrode layer 15A… Semiconductor crystal layer portions of semiconductor crystal layer 6A

────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Katsuaki Song 1-6, Uchisaiwaicho, Chiyoda-ku, Tokyo Nippon Telegraph and Telephone Corporation (56) References JP-A-2-7581 (JP, A) JP-A Sho 54-27786 (JP, A) JP-A-2-266549 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 27/15 H01L 33/00 H01S 5/00-5 / 50

Claims (3)

(57) [Claims] (I) It is assumed that neither an impurity imparting a first conductivity type nor an impurity imparting a second conductivity type opposite to the first conductivity type is intentionally introduced or introduced. ... N and the n-type incoherent light semiconductor crystal layer, which is introduced only at a sufficiently low concentration, and an impurity or a first conductivity type that gives the first conductivity type. And (ii) a laser light semiconductor crystal layer in which any of the impurities imparting the opposite second conductivity type is not intentionally introduced, or is introduced only at a sufficiently low concentration even if it is introduced. The first semiconductor crystal layer for incoherent light is formed on and in contact with the first semiconductor crystal layer, and (iii) the second, third,..., Nth semiconductor for incoherent light. The crystal layer has the first, second,...
... First and second... (N−1) th semiconductor crystal layer portions which are sequentially arranged on the (n−1) th semiconductor crystal layer for incoherent light when a part thereof is viewed from above. ., N.sup.th and n.sup.th semiconductor crystal layers, respectively; and (iv) forming the laser light semiconductor crystal layer with the n.sup.th incoherent On the optical semiconductor crystal layer, a part thereof is left as an n-th semiconductor crystal layer portion, and is formed by laminating via an (n + 1) -th semiconductor crystal layer. (2) a structure in which an (n + 2) -th semiconductor crystal layer is continuously formed on the n-th semiconductor crystal layer portion and the semiconductor crystal layer for laser light; And the first incoherent light half. A semiconductor laminate having first and second end faces respectively forming an end face of the conductor crystal layer on the first semiconductor crystal layer portion side and an end face opposite to the first semiconductor crystal layer portion; The first and second electrode layers are disposed opposite to each other on the first and second main surfaces, respectively, and the first, second,..., Nth incoherent light semiconductor crystal layers are .. Having the first, second,..., N-th energy band gaps in that order, wherein the semiconductor crystal layer for laser light has an energy band gap smaller than that of the semiconductor crystal layer for incoherent light. (I) the first semiconductor crystal layer has a wider energy band gap and a lower refractive index than the first incoherent light semiconductor crystal layer, and has a first conductivity type. , (Ii) the second and third above ... The n-th semiconductor crystal layer has a wider energy band than the first and second, the second and third,..., The (n−1) -th and n-th semiconductor crystal layers for incoherent light. Whether the impurity having a gap and a low refractive index respectively and giving the first conductivity type or the impurity giving the second conductivity type opposite to the first conductivity type is not intentionally introduced. (Iii) the (n + 1) th semiconductor crystal layer has the following conductivity type:
The impurity or the first conductivity type, which has a wider energy band gap and a lower refractive index than the n-th incoherent light semiconductor crystal layer and the laser light semiconductor crystal layer, and gives the first conductivity type. Whether any impurity imparting the opposite second conductivity type is intentionally introduced or not.
(Iv) the (n + 2) -th semiconductor crystal layer has a wider energy band gap than the first to n-th semiconductor crystal layers for incoherent light and the laser light semiconductor crystal layer. And a second conductive type, wherein the first electrode layer is opposed to the first to n-th incoherent light semiconductor crystal layers. And a laser light electrode layer facing the laser light semiconductor crystal layer, wherein the first end face of the semiconductor laminate is an incoherent light and laser light emission surface. A semiconductor light emitting device characterized by the above-mentioned. 2. The semiconductor light emitting device according to claim 1, wherein the incoherent light electrode layer of the first electrode layer is formed of the first, second,..., Nth incoherent light semiconductor crystal. A semiconductor light-emitting device having first, second,..., N-th electrode layer portions facing the first, second,..., N-th semiconductor crystal layer portions, respectively. 3. The semiconductor light emitting device according to claim 1, wherein the first, second,..., N-th energy bands of the first, second,..., N-th incoherent light semiconductor crystal layers. The gap is a band of light emitted from the first and second semiconductor crystal layers for incoherent light, a band of light emitted from the second and third semiconductor crystal layers for incoherent light,... (N -1) The semiconductor light emitting device, wherein light bands respectively emitting light in the n-th incoherent light semiconductor crystal layer have values obtained by partially overlapping each other.