JP3129049B2 - High corrosion resistant metals and their manufacturing methods and applications - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel metal material having high corrosion resistance and, more particularly, to a method and an apparatus for using the same to improve the corrosion resistance of a magnetic material and to ensure high reliability of a structural material, and its use.

[0002]

2. Description of the Related Art Metal thin films can be prepared by plating using an electric field effect or a chemical reaction from a solution (electrodeposition method), or a vacuum deposition method of heating a metal as an evaporation source to form a film in a vacuum. And a sputtering method in which a metal target is hit with gas particles or the like to form a film. In the case of the electrodeposition method from a solution, impurity ions in an aqueous solution enter the film and have poor physical stability. There is a technical problem in forming a film. On the other hand, it is known that the ion beam deposition method (IBD method) does not have the same problems as the above-described method, and can form a uniform thin film with few impurities.

As a method for improving the purity of a metal, a floating zone melting method (floating zone melting method) is used.
It has been known.

As the IBD method, Japanese Patent Application Laid-Open No. 60-231924,
Japanese Patent Application Laid-Open No. 61-87871 is known. The former is purity 9
A method in which 9.9% Fe is evaporated as an evaporation source and nitrogen gas and oxygen gas are simultaneously ionized to irradiate the substrate to form an iron magnetic film. A method of irradiating a beam and depositing the metal or alloy on a substrate surface is disclosed.

In an ion beam metal surface treatment apparatus, an ion implantation apparatus for manufacturing a semiconductor device, or an ion source apparatus used in an ion beam deposition apparatus, an accelerator, and the like, refer to “Electron / Ion Beam Handbook (2nd Edition)”.
Version) "(edited by the 132nd Committee of the Japan Society for the Promotion of Science, published by Nikkan Kogyo Shimbun, published in 1986), page 203, Freeman-type ion source described in FIG. A substance containing the element is inserted into a crucible equipped with a heating mechanism, and the crucible is heated to generate a metal vapor containing the desired metal ion element, and sent to the discharge chamber to create a discharge plasma containing the metal ions. There are known ways to do this.

[0006]

However, in the IBD method, a technique for generating a metal ion beam and forming a thin film has not been developed. A plasma chamber having a shape suitable for selecting compounds and extracting metal ions to the substrate side is required.

Further, in order to impart corrosion resistance that can withstand practical use, it is necessary to set film forming conditions.

[0008] At present, among metals, for example, iron, for example, it has begun to study that the corrosion resistance is increased by the purification of a thick iron film formed by a float zone method, but it has been put into practical use as a thin film such as a magnetic head film. Has not been reached. As described above, sufficient knowledge has not been obtained on a method of forming a metal thin film that is not easily corroded, and therefore, it is difficult to increase the corrosion resistance of a metal thin film that is a basic constituent element of a magnetic film.

Furthermore, in the prior art, in order to stably generate desired metal ions for a long period of time, a crucible excellent in heat resistance and chemical stability at high temperature is required, and the pressure of metal vapor is kept constant. In order to maintain the temperature, it was necessary to control the temperature of the crucible accurately. As a result, the configuration of the ion source device becomes complicated, the size of the ion source cannot be reduced, and it is difficult to form a high corrosion resistant film.

An object of the present invention is to provide a metal or alloy having excellent corrosion resistance, a method of manufacturing the same or a manufacturing apparatus therefor, and a magnetic disk drive having a magnetic head capable of reading with high sensitivity.

[0011]

According to the present invention, a plurality of mass numbers are provided.
Among the metals of one element having a single mass number
A metal having a single mass number of 9
High corrosion resistant metal characterized by being not less than 9.99% .

Further, in the present invention, it is preferable that the purity is 99.99% or more and the crystal grain size is 5 nm or less .

Further, the present invention has a metal thin film on a substrate surface.
The thin film is made of one metal or two elements
Consisting of an alloy of the above metals, wherein the respective elements of the metal are
Among the masses with multiple mass numbers, there is a single mass number.
Pure metal having the single mass number
High corrosion resistance characterized by a degree of 99.99% or more
In the member .

Further, the present invention provides a member having a metal thin film on a substrate surface, wherein the thin film has a plurality of mass numbers.
Among the elemental metals, those having a single mass number
The purity of the metal having the single mass number is 99.99% or less.
The high corrosion resistant member is characterized by having a top surface and being deposited on the densest surface in the deposition direction, and having a crystal grain size of 0.5 μm or less.

[0015] Further, the present invention relates to a fuel cell system having a plurality of mass numbers.
Of the elemental metals, the metal is ionized and the ionized
Separated into a single mass number, the separated single mass
Accelerate several metals so that sputtering does not occur.
And the purity of the metal of the single mass number is 9
9.99% or more of high corrosion resistant metal
It is in the manufacturing method .

Furthermore, the present invention, metal is ionized, the ionized metal separated into single mass number, is preferably deposited to accelerate the single mass number of the metal separated the mass to 1~200eV .

Further, the present invention relates to a method for manufacturing a material comprising two or more metals.
The respective elements of the metal have a plurality of mass numbers,
And ionizing each of the ionized elements
Each element of the separated single mass number
Accelerated so that sputtering does not occur
Alternately with each other, and each element of the single mass number
Element has a purity of 99.99% or more.
It is in the production method of corrosion resistant metal .

Further, the present invention provides a method for forming a metal thin film on a substrate surface.
In the manufacturing method of the component to be formed, a unit having multiple mass numbers
Of the elemental metals into a single mass number
Separated, and the separated single mass metal is substantially sputtered.
Accelerates so that no tarring occurs and deposits on the substrate surface
And the purity of the single mass number metal is 99.
Manufacture of high corrosion resistant members characterized by being 99% or more
In the law .

[0019]

The present invention has a plurality of mass numbers on a substrate.
Depositing a single mass of said metal of one element
And the purity of the metal having the single mass number is 99.99%.
The metal ion implantation chamber described above,
Discharge chamber to form ions, ions to accelerate the metal ions
An acceleration power supply, and
A pipe for transporting an ion beam to be introduced into the implantation chamber,
Accelerates and introduces elemental metal ions into the pipe
A drawer power supply, and the metal ions introduced at a high speed are simply
Mass separation electromagnet for mass separation to one mass number and said mass separation
Voltage control lens for decelerating selected metal ions
An apparatus for manufacturing a metal, comprising: The electromagnet has switching means for switching the current, and the metal ion implantation chamber has a heater for heating the base in the base holding means for holding the base.

Further, the present invention provides a method for manufacturing a magnetic recording medium on a ceramic substrate.
Air shield film, lower gap film, magnetic domain control film, magnetoresistance
A magnetic resistor that converts a magnetic signal into an electrical signal using the effect
Anti-effect film, shunt film, soft film and the magneto-resistance effect
A magnetic resistor having a pair of electrodes sequentially passing a signal detection current through the film.
A magnetic disk drive equipped with an anti-effect magnetic head.
And at least one of the films is one element or two or more elements.
And each element has a plurality of mass numbers
Having a single mass number, and the element having the single mass number
Metals, alloys, and chemicals with elemental purity of 99.99% or more
Magnetic disk characterized by comprising any one of compounds
In the device .

Further, the present invention provides a magnetic recording device using the magnetoresistance effect.
A magnetoresistive film that converts a gas signal into an electrical signal;
A pair of electrodes for supplying a signal detection current to the magnetoresistive film.
Pole and magnetic domain control layer for controlling magnetic domains of the magnetoresistive film
Magnetic disk equipped with a magnetoresistive head having
A disc device, wherein the magnetoresistive film is made of one element of gold.
Metal or an alloy of metals of two or more elements,
Each of the above elements has a plurality of mass numbers
The metal having a single mass number,
That the purity of the metal having the number is 99.99% or more
The magnetic disk device is characterized in that:

Furthermore, the present invention provides a method for detecting external magnetization and detecting magnetization.
A magnetoresistive film for changing the direction, and the magnetoresistive film
A pair of electrodes for passing a current through the magnetoresistive film
Effect type having a magnetic domain control layer for controlling magnetic domains
A magnetic disk drive equipped with a magnetic head, wherein:
The magnetoresistive film is made of one element metal or two or more elements metal.
Consisting of an alloy, wherein each of the elements of each of the metals is plural
Of those having a mass number of, the above having a single mass number
A metal having a single mass number of 9
9.99% or more and smaller than fine crystal grains
And that the deposited surface has one desired surface index.
There is a magnetic disk device .

Further, the present invention provides a magnetic recording device using the magnetoresistance effect.
A magnetoresistive film that converts a gas signal into an electrical signal;
A pair of electrodes for supplying a signal detection current to the magnetoresistive film.
Pole and magnetic domain control layer for controlling magnetic domains of the magnetoresistive film
A first magnetic pole; and a first magnetic pole,
A second magnetic pole that contacts the pole on one side and forms a gap on the other,
And a coil wound between the magnetic poles, and flows through the coil.
And a recording head that converts current into magnetization.
Magnetic disk equipped with a separate thin-film magnetic head
A magneto-resistive film, wherein the magnetoresistive film is a metal of one element or
Is composed of an alloy of two or more metals,
Each of the elements has a plurality of mass numbers.
The metal having a single mass number,
The purity of the metal is 99.99% or more, and
It is characterized by having fine granular crystals with a thickness of 00 nm
In a magnetic disk drive .

[0025]

The present invention is achieved by reducing the extraction voltage of metal ions after ionizing metal atoms to such an extent that sputtering or implantation does not occur, thereby limiting the gas molecule density around the substrate on which a film is formed.

The ion kinetic energy is 200 eV or less, preferably 10 to 10 when the substrate temperature is around room temperature.
It is necessary to be 200 eV. Further, gas molecules of the film forming chamber is nitrogen, oxygen, carbon dioxide, water, is composed of such, preferably by reducing these partial pressures i.e. exhaust device 10 ^-4 Pa or less, more preferably 10 ^{- 7} P
It is an important means for producing a highly corrosion-resistant metal to reduce the gas density at a high vacuum of a or less.

[0027] For the preparation of the alloy by the IBD method,
It has been discovered that alloying is achieved by heating during or after metal isotope ion irradiation. The relationship between the temperature at the time of film formation and the ion kinetic energy is as follows.
It was found that a permalloy film can be formed at 20 ° C. and 20 to 100 eV. By setting the substrate temperature to 200 to 300 ° C., Fe and Ni of the permalloy material can be alternately deposited within several atomic layers and simultaneously alloyed.

The mechanism of suppressing the corrosiveness of the metal thin film formed by the metal thin film forming means was examined. It was found that the crystal structure of the metal thin film surface had only a single crystal orientation plane and that the metal surface had a size of 1 micron or less. It was found that it was composed of fine crystal aggregates and had few defects.
From these facts, it is considered that the reaction between the metal and the anion containing oxygen, water, and halogen, which promotes corrosion, prevents the molecules and ions from invading in the highly regular surface structure and suppresses the corrosion reaction. Can be

In particular, as a specific example of the present invention, an iron thin film is formed on a conductive substrate, and the surface of the iron thin film is substantially composed of a (110) plane. Irradiating the conductive substrate with iron ions at an accelerating voltage of ~ 200V to deposit iron atoms, selectively ionizing one type of iron isotope from iron atoms having iron isotopes, and 10V ~ 200V Irradiating a conductive substrate with a single mass number of iron ions at an accelerating voltage to deposit iron atoms, the density of gas molecules around the substrate where the iron atoms are deposited and the density of suspended non-iron atoms is 3 × Irradiating iron ions in an atmosphere of 10 ¹² / cm ³ or less to deposit iron atoms;
It can be obtained by setting the temperature of the substrate on which iron ions are irradiated and deposited to 300 ° C. or lower, particularly 200 ° C. or lower.

When the acceleration voltage is increased, granular crystals and columnar crystals are mixed, and in the body-centered cubic lattice, (110) / (11)
When the area ratio of (0) + (211) is small, the amount of corrosion increases.

The area ratio of (110) is preferably 50% or more, and it is most preferable that the densest plane be 100% in any lattice. However, by setting the area ratio to 50 or more, the corrosion resistance is enhanced. Furthermore, after ionizing the isotope of the iron atom,
The extraction voltage of iron ions is reduced to the extent that sputtering or implantation does not occur, and the gas molecule density around the substrate on which the film is formed is limited. However, this ion extraction voltage is 200 V when the substrate temperature is around room temperature.
The following is preferred. Particularly, 10 to 100 V is preferable. The gas molecules in the deposition chamber are nitrogen, oxygen, carbon dioxide, water,
The reduction of these partial pressures, that is, the reduction of the gas density by an exhaust device, is an important means for producing highly corrosion resistant iron.

Further, the present invention resides in an apparatus for manufacturing the same in which a specific mass number of iron ions is directed to a substrate by a magnet.

The mechanism of suppressing the corrosiveness of the iron thin film formed by the iron thin film forming means was examined. It was found that the crystal structure of the iron thin film surface was a body-centered cubic lattice consisting only of the (110) plane, Was composed of fine crystal aggregates of 1 micron or less (particularly 0.01 to 0.5 μm), and it was found that there were few defects. from these things,
It is considered that the reaction of the anion containing oxygen, water, and halogen with iron that promotes corrosion prevents the molecules and ions from penetrating in a highly regular surface structure, thereby suppressing the corrosion reaction.

As the Fe ion source, Fe ₂ O ₃ , Fe
Fe compounds such as ₃ O ₄ , FeCl ₃ , and FeOH ₃ are preferable, and CCl ₄ gas is preferable as the carrier gas. The deposition of the thin film is preferably performed in an ultra-high vacuum of 10 ^-4 Pa or more.

Although the IBD method of the present invention can form inorganic compounds such as metals, alloys, oxides, nitrides, and carbides, it deposits those having the highest mass number among the elements present in nature. Is preferred. The mass number of the main element having the largest abundance is Mg24, Al27, Si28, T
i48, V51, Cr52, Mn55, Fe56, Ni58,
Cu63, Zr90, Nb93, Mo98, Ru102,
Ag107, Hf180, Ta181, and W184.

The IBD method of the present invention can be used for the greatest effect in forming a magnetoresistive film of a magnetoresistive magnetic head. In particular, an Fe—Ni alloy (permalloy) is used as the magnetoresistive film. ) Itself or
A high purity Fe thin film having a mass number of 58 and a plane index (110) of 10 nm or less is formed on a permalloy film formed by conventional sputtering, vapor deposition, electroplating or the like by the IBD method of the present invention. .

As other application examples, formation of a lower magnetic film, an upper magnetic film, a winding coil, etc. of a thin-film magnetic head for writing, VLSI
Is effective for forming a barrier layer made of TiN or the like for an electrode wiring having a barrier layer for a contact hole on a Si substrate for use.

[0038]

【Example】

(Embodiment 1) FIG. 1 is a configuration diagram of an ion beam deposition apparatus for generating a metal ion beam.

The ion source device shown in FIG. 2 is a block diagram of a microwave ion source device for generating iron ions by microwave discharge having an oscillation frequency of 2.45 GHz.

Size 20 made of boron nitride
20 mm diameter on the bottom inside the discharge chamber 4 of mm × 30 mm × 50 mm
m, making the concave portion 4 1 a depth of 1 mm, an average particle diameter of the concave portion 4 1 iron oxides 10μm a (Fe ₂ O ₃₎ powder 3 50
0 mg was inserted. One side of the discharge chamber 4 has a conductive lid.
And an ion extraction slit 5 having an opening size of 2 mm × 50 mm was provided therein. A magnetic field strength of 900 Gauss is applied to the discharge chamber 4 area by the magnetic field coil 6, and carbon tetrachloride (C
Cl ₄ ) gas was introduced at a rate of 0.5 cc / min.

A microwave power having a frequency of 2.45 GHz and an output of 300 W generated from the magnetron 22 having an oscillation frequency of 2.45 GHz was guided to the discharge chamber 4 through the waveguide 21. As a result, a high-density carbon tetrachloride (CCl ₄ ) discharge plasma 9 was generated in the discharge chamber 4. The potential of the conductive slit 5 is increased by +30 by the ion acceleration power supply 15.
kV, and the potential of the first ion extraction electrode 11 is
-3 kV, and the ion extraction second electrode 13
The ion beam 1 was extracted from the carbon tetrachloride (CCl ₄ ) discharge plasma 9 created in the discharge chamber 4 with the potential of the ground as the ground potential.

The microwave ion source 20 shown in FIG. 2 was attached to the ion implantation apparatus shown in FIG. 1, and the ions generated by the ion source 20 were deposited. The ion implantation apparatus shown in FIG. 1 includes a microwave ion source 20 and a waveguide 21, a magnetron 22, a magnetron power supply (not shown), an ion extraction first electrode 11, and an extraction power supply 1 shown in FIG.
2, ion extraction second electrode 13, ion beam transport vacuum pipe 23, 90 ° deflection mass separation electromagnet 28, vacuum pump 10, ion implantation chamber 25, substrate 2, substrate 2
Heater 26 for heating the substrate supporting lifting means 29, substrate load lock chamber 24 for replacing the substrate 2, a lens system 27, insulators 30, a reflection type high energy electron diffraction 31, electron gun 32, the valve 33, the ion beam It comprises a monitor 34, a collector electrode for other ion current measurement, and an ammeter for ion current measurement. By operating the microwave ion source under the conditions shown in FIG. 1, the ion beam 1 extracted from the carbon tetrachloride (CCl ₄ ) discharge plasma 9 created in the discharge chamber 4 at an acceleration voltage of 30 kV is subjected to 90 ° deflection mass separation electromagnet. When the magnetic field strength of 28 was scanned and mass-separated, and the ion current flowing to the ion current measurement collector electrode was measured, it was found that a ⁵⁶ Fe ⁺ ion beam was obtained. Iron oxide (Fe) inserted into the discharge chamber 4 of the ion source
₂ O ₃₎ CCl ₄ gas ionization feedstock 3 consisting of powder introduced from the gas introduction hole 7 is high-density carbon tetrachloride (CCl
₄₎ while being heated by the discharge plasma 9, heated iron oxide (Fe ₂ O ₃₎ powder powder is CCl ₄ gas plasma and the plasma reaction by ⁵⁶ Fe ⁺ ions occurs.

In the present embodiment, Fe ₂ O ₃ powder was used to generate iron ions, but an oxide having another structure (Fe ₃ O ₃₎ was used.
O ₄ , FeO _2, etc.), iron carbides (FeC, etc.), halides (FeCl ₂ , FeCl ₃ , FeCl ₂ .H ₂ O, etc.), hydroxides (Fe (OH) ₃ etc.), metal nitrides ( Fe
Etc. N _4), an organometallic compound (Fe (OCH _3), etc. _3), a metal alloy material (Fe-Zr, etc. FeS ₂₎ even has the same effect, it may be used these materials.

First, in the ion source 20, Fe ₂ O ₃ + C
Cl ₄ cause gas discharge, drawers extraction voltage Vext = 20 kV with a drawer power source 16 and to generate an ion beam 18 of the current amount of 5 mA. The ion beam was mass-separated using a mass separation electromagnet 28 having a deflection radius of 50 cm and a deflection angle of 90 degrees, and Fe ions having a mass number of 56 were extracted.
The potential of the ion source 20 was variously changed by the acceleration power supply 17. The mass separation electromagnet 28 was constituted by a saddle type in which the vacuum pipe 23 was divided into three parts along the periphery of the pipe.

[0045] passed through an ion deceleration lens 27 iron ions were mass separation, decelerating energy to acceleration potential in the ion source, the flange by Ri vacuum attached to the lower portion of the deposition chamber 25 of 400mmφ diameter 2 It was introduced into the film forming chamber 25 maintained at × 10 ⁻⁶ Pa.

In the ion implantation chamber 25 serving as a film formation chamber ,
A substrate supporting lifting means 29 is equipped with heating capabilities, substrate load lock chamber 24 from the diameter 2 inch Si (100) substrate 2
The surface on which the thin film was to be formed was turned downward, and the surface was held in a horizontal position as shown in the figure.

The heater 26 of the halogen lamp is located in the substrate back surface attached to the substrate supporting lifting means 29 with the heater 26
, And the temperature of the silicon substrate was kept at 300 ° C.

The silicon substrate 2 having a diameter of 2 inches arranged in the horizontal direction was irradiated with Fe ions separated by mass from the direction perpendicular to the silicon substrate for 60 minutes. As a result, (1
10) A thin film of pure iron epitaxially grown in the crystal direction was obtained. The diameter of the film at that time is 20 mm and the film thickness is 5
00 nm.

In this embodiment, the energy of iron ions is set to 50 to 500 eV. However, if the thin film is deposited by the ion beam deposition method, it may be more. If the energy of ions is low, the thin film can have a denser and smoother surface.

Table 1 shows the conditions for forming the iron thin film and the corrosion rate calculated from the polarization characteristics obtained by immersing the thin film in saline and sweeping the potential of the iron film from the cathode to the anode. The corrosion current density indicating the corrosion rate under the film forming conditions obtained by the present invention is 1 compared with iron formed under other conditions.
It was found that the corrosion current, that is, the corrosion rate, was reduced to / 10 or less. The crystal grain size of the film was 20 nm or less.

In particular, the ion kinetic energy is 200 eV
It was found that the following film forming conditions by the ion beam deposition method were suitable for imparting high corrosion resistance. Preferably, a thin film having high corrosion resistance is obtained by depositing with an energy of 1 eV or more, particularly 10 eV or more, which is higher than the ion kinetic energy by vapor deposition.

When the crystal orientation on the surface of the iron was examined by an X-ray diffractometer, according to the present invention, No. 7 to No. 7 in Table 1 were used.
In 10, the (110) plane, which is the dense plane of α-iron, is selectively oriented, and the (110) plane is almost perpendicular to the surface, that is, similar to a (110) single crystal. It was found to have a polycrystalline structure.

Further, the distribution of elements other than iron on each iron surface was measured by a glow discharge mass spectrometer. As a result, in No. 4 to No. 10 in Table 1, other than iron of Nos. The detection amount was 1/100 or less of the element amount, and it was found that the effect of reducing the impurity amount also contributed.

FIG. 3 shows a polarization curve obtained by immersing an iron thin film prepared according to the present invention and commercially available 99.5% iron in 0.001M saline at 25 ° C. The corrosion current density of commercially available 99.5% iron is 2 × 10 ^-2 A / m ² , whereas the corrosion current density of the iron film prepared by the ion beam method of the present invention is derived from When the voltage is 100 V, which is No. 8, the extraction voltage is reduced to about 1/10,
In the case of 50 V, it was found to be significantly reduced to about 1/100 of that. These thin films of the present invention had a high purity of iron having a mass number of 56 of 99.999% or more.

[0055]

[Table 1]

FIG. 4 also shows 0.001M H ₂ S at 25 ° C.
It is a polarization curve measured by immersing in an O ₄ aqueous solution. Fe
99.5% and 99.99% are both commercially available, RR
_RH 6000 and 8000 are Fe having a purity of 5 nines and the latter having a purity of 7 nines, respectively, obtained by floating zone melting. It is clear that the corrosion resistance is improved by the high purity, but it is clear that the higher corrosion resistance is achieved by the high purity and the formation of the plane index in a specific direction as in Nos. 8 and 10 of the present invention. is there.

FIG. 5 is a graph showing the relationship between the ultimate vacuum degree and the impurity concentration at the time of film formation, FIG. 6 is a graph showing the relationship between the amount of corrosion in the same salt solution, and FIG. As shown in FIG.
By increasing the degree of vacuum, impurities such as oxygen and other metal elements sharply decrease, and in particular, 1.5 × 10 ^{5 at} 10 ⁻⁵ Pa.
^-3 pieces. Further, as shown in FIG. 6, at 10 ⁻⁵ Pa, the amount of corrosion is 10 ² μg / cm ² , and the amount of impurities at that time is about 10 ¹⁵ / cm ² as shown in FIG. In particular,
When the amount of impurities is 3 × 10 ¹² / cm ² or less, the amount of corrosion rapidly decreases, and the degree of vacuum is preferably set to 10 ⁻⁷ Pa or more.

FIG. 8 shows that the ion acceleration voltage of the IBD apparatus of Example 1, that is, the ion kinetic energy was changed from 30 eV to 500 eV, and the crystal orientation of the irradiated pure iron was (1).
10) 0.00 when the ratio between the plane and the (211) plane is adjusted
The amount of corrosion at 25 ° C. in a 1 mol / liter saline solution is shown. With the increase of the ion acceleration voltage, (211)
The face ratio increases. The iron isotope selected was iron 56, but it has been confirmed that the proportion of crystal orientations other than dense planes increases in other metals as the ion acceleration voltage increases.

FIG. 9 shows the relationship between the measured value of the work relation of iron of the type and the amount of corrosion in air-saturated 25 ° C. saline. IB
The work relationship on the iron surface formed in D is the normal value of 4.5 eV.
Although it is higher at 4.65 eV, it is considered that the threshold value of the emission of electrons from this surface is correlated with the strengthening of the surface oxide film showing the improvement of corrosion resistance.

Embodiment 2 Using the ion beam deposition apparatus shown in Embodiment 1, thin films of various elements were formed.
The metal ions extracted from the ion source 20 by the acceleration voltage power supply 17 change their trajectories toward the substrate 2 by the magnet 28. The metal ions were directed by the lens 27 on the substrate having the same potential as the ground potential, and the metal was deposited on a predetermined area to form a thin film. The metals used for the film formation were iron, nickel, manganese, aluminum, copper, tungsten, tantalum, and niobium, and these oxides were used as metal compounds as raw materials for plasma for ionizing the metal. Film formation conditions are room temperature and kinetic energy is 50
eV. Table 2 shows the results of comparing the amounts of corrosion of these metal films when immersed in a 1 mol / liter saline solution for 1 hour with the commercially available high purity metal as 1. In any of the metals, the thin film of the present invention had high corrosion resistance.

The metal mass number of the deposited thin film is Fe
56, Ni58, Mn55, Al27, Cu63, W18
4, Ta181 and Nb93. Note that other mass numbers can be similarly deposited. Each film had a crystal grain size of about 3 nm or less.

[0062]

[Table 2]

Example 3 Using the apparatus shown in FIG. 1, Fe and Mo ions from the ion source evaporation source 3 were formed using these oxides, and simultaneously irradiated with Fe atoms 56 and Mo atoms 36 ions. Then, a high corrosion resistant Fe-C-Mo low alloy steel thin film was formed at room temperature.

The film forming chamber 2 in which the degree of vacuum was kept at 2 × 10 ⁻³ Pa
Size arranged horizontally in 5 30 minutes on iron having a diameter of 50 mm, was irradiated with an ion energy 1000eV which mass separation vertically upward by the film forming chamber 25 lower, and the Fe and Mo from the evaporation source 3 Are alternately deposited by switching the current of the electromagnet 28. These deposits could be alloyed by preheating the substrate to about 300 ° C. by setting it to about one atomic layer. The crystal grain size was 5 nm or less.

[0065] As a result, the substrate temperature high corrosion resistance Fe-C-Mo low alloy steel thin film having a thickness of 2μm on the iron substrate 2 could be formed at room temperature. Corrosion rate of progression of a saturated saline of the formed thin film is 0.02 mm / year to conventional iron alloy thin film that is 2 mm / year, shows a small value of 2 digits, improves corrosion resistance Was. The adhesion to the substrate 2 was high.

Embodiment 4 FIG. 10 shows a magnetic disk drive 4 according to one embodiment of the present invention.
FIG. As shown in the figure,
The magnetic disk device 4000 includes a plurality of magnetic disks 112 stacked on one axis (spindle) at equal intervals, a motor 111 for driving the spindle, a magnetic head group 113 held on a movable carriage 114, and the carriage A voice coil motor 115 for driving 114;
And a base for supporting them. Also,
A voice coil motor control circuit that controls the voice coil motor 115 according to a signal transmitted from a higher-level device such as a magnetic disk control device is provided. Further, a function of converting data sent from the host device into a current to be passed to the magnetic head in accordance with a writing method and a function of amplifying data sent from the magnetic disk 113 and converting the data into a digital signal are provided. With read / write circuit
This read / write circuit is connected to a host device via an interface.

Next, the operation of the magnetic disk device 4000 will be described by taking a read operation as an example. The host device gives an instruction of data to be read to the voice coil motor control circuit 115 via the interface.
By the control current from the voice coil motor control circuit,
The voice coil motor 115 drives the carriage 114, moves the magnetic head group 113 at a high speed to the position of the track where the designated data is stored, and accurately positions it. This positioning is performed by the positioning magnetic head 113a connected to the voice coil motor control circuit detecting and providing the position on the magnetic disk 112 and controlling the position of the data magnetic head 113. The motor 111 specified by the base rotates a plurality of magnetic disks 112 attached to the spindle. Next, in accordance with a signal from the write / read circuit, the designated predetermined magnetic head is selected, and after detecting the head position of the designated area, the data signal on the magnetic disk is read. This reading is performed by the data magnetic head 113 connected to the write / read circuit by the magnetic disk 11.
2 by transmitting and receiving signals. The read data is converted into a predetermined signal and sent to a host device.

The track density of the magnetic disk according to the present invention is 2,000 to 20,000 tracks per inch. The linear recording density is 65-200 kilobits per inch.
The surface recording density determined by these products can be set to 170 to 4000 megabits per square inch.

The magnetic head mounted on the magnetic disk drive of the present invention is, for example, the recording / reproducing separation head 3000 shown in FIG. Read / write separated magnetic head 300
0 indicates that recording is performed by the electromagnetic induction type thin film magnetic head 2000 and reproduction is performed by the magnetoresistive effect type magnetic head (hereinafter, referred to as MR head) 1000.

According to the present invention, the reproduction output per unit track width of the MR head 1000 is the same as that of the conventional electromagnetic induction type for both recording and reproduction when the reproduction operation is performed with the same flying height and the type of magnetic disk medium. 5-1 of thin film magnetic head
It can be 0 times. Moreover, the reproduced output has an excellent advantage independent of the peripheral speed of the magnetic disk.

Further, even when the track width of the MR head is reduced, that is, the track density of the magnetic disk medium is increased, a high reproduction output can be maintained. Further, even if the linear recording density of the magnetic disk medium is increased, a high reproduction output can be maintained.

Further, according to the present invention, Barkhausen noise, which is likely to be generated in an electric signal from a magnetic disk during reproduction, is suppressed, and any disk rotation speed, sense current, and flying height are caused by the noise. Since the generated baseline fluctuation amount of the reproduced waveform is suppressed to 3% or less, the signal can be a noiseless electric signal, a high S / N ratio can be secured, and information can be reproduced with high sensitivity.

Further, according to the present invention, it is possible to obtain a stable, high-output, noiseless electrical signal within the operating temperature range.

Further, according to the present invention, by separating the recording head from the reproducing head, the magnetic core material 130 of the recording head 2000 can be made of a material having a high saturation magnetic flux density Bs, and the write magnetic field can be increased. In addition, sharpness can be obtained, and recording can be performed at a high linear recording density. In addition, even if the track width is small, a high write magnetic field can be maintained, and recording can be performed with a high track density. In addition, the coercive force of the magnetic disk medium can be increased accordingly.

As described above, the MR head 100 according to the present invention
By configuring the magnetic disk device including 0, it is possible to realize a magnetic disk device capable of reproducing with high output and without noise regardless of the size of the disk diameter.

As described above, high-density recording can be performed regardless of the size of the magnetic disk, and even if the disk diameter is reduced to 1.5 to 6.5 inches in the magnetic disk device of the present invention, the rotational speed of the magnetic disk is reduced. At 3500-5000 rpm, track density 2.6-20.0 ktpi and linear recording density 60-
Recording and reproduction at 200 ktpi can be performed, and a magnetic disk device achieving a surface recording density of 170 to 4000 megabits per square inch can be realized.

Further, in order to satisfy the device capacity required for a small magnetic disk device, a high bit density and a high track density are required, and even if the disk diameter is reduced to 1.5 to 3.0 inches, sufficient reading is possible. Since the write operation can be performed, the size of the disk can be reduced to a disk diameter of the size, and a large-capacity small magnetic disk device can be realized.

Even if the recording density is increased and the storage capacity of the information is increased, if the data transfer speed is reduced by that amount, the usefulness is small. The data transfer speed increases as the linear recording density increases. In the present invention, the linear recording density can be set to 60 to 200 kilobits per inch, and the transfer speed can be increased.

According to the present invention, the recording head 200
Since the high Bs material is used for the magnetic core material 130 of 0, a sufficiently strong write magnetic field can be maintained even if the number of turns of the conductor coil 110 is reduced, so that the number of turns can be reduced (FIG. 16). The inductance of the recording head 2000 can be reduced, and the operation of writing information can be sufficiently performed even at a high frequency.

The read output of the MR head can read information at a high frequency without depending on the peripheral speed.

Further, the MR head 1000 according to the present invention
The electrical signal obtained using is noiseless.
Therefore, the obtained electric signal can be converted into a digital signal without passing through a special circuit for processing the Barkhausen noise.

As described above, according to the present invention, the data transfer rate can be set to 6 to 9 megabytes / second.

Data access time (positioning time)
Needs to be shortened with an increase in the data transfer rate, and in the present invention, it is desirable to set the time to 5 to 10 milliseconds.

The number of rotations of the disk and the rotation waiting time of the magnetic head are 3500 rotations in relation to the data transfer speed.
It is desirable that the rotation waiting time be 6 ms or less on average on the basis of rpm. Here, the rotation waiting time means that the magnetic head that has moved to a predetermined track position is stationary for writing information at a predetermined position on the track or reading information from the predetermined position and rotating the magnetic disk. Means waiting for.

According to the present invention, the diameter of the magnetic disk can be reduced, so that high-speed seek can be performed.
Since the Barkhausen noise of 00 can be suppressed, the access time can be shortened.

When the MR head reads a signal from the magnetic disk, if Barkhausen noise (baseline fluctuation) occurs, the data signal from the magnetic disk must be read again. At this time, the read operation is performed again in the cycle described above. For example, when a magnetic disk drive is provided with an MR head that generates Barkhausen noise with a probability of 1/2, the access time is delayed by 1/30 second. In the magnetic disk drive of the present invention,
Since Barkhausen noise of the MR head was suppressed,
The access time can be between 5 and 10 milliseconds.

FIG. 13 is a perspective view showing a state where the magnetic disk drive of the present invention is housed in a predetermined space.

Head Disk Assembly (HDA)
A head disk assembly unit (HDU) 73 is formed by the electronic circuit unit 71 and the electronic circuit unit 72, and is housed inside the container 700. The length of one side of the container 700 is 0.3 to 1.5 m, and the height is 0.2 to 2 m depending on the device capacity.
And In FIG. 3, A and B are HDA and H
This is an air flow for supplying clean air to a circuit board in the DU.

FIG. 14 is a perspective view showing a state in which the read / write separated magnetic head of the present invention is formed on a predetermined slider.
Reference numeral 81 denotes a slider, for example, a non-magnetic ceramic. Reference numeral 3000 denotes a recording / reproducing separation type magnetic head, which has the shape shown in FIG. 16 in detail. Further, since the recording head and the reproducing head are separated, the magnetic recording / reproducing separated type magnetic head has four current terminals. Reference numeral 83 indicates a medium facing surface, which is a surface facing the magnetic disk.

FIG. 15 is a perspective view of a read / write separated magnetic head in which the slider shown in FIG. 14 is formed on a load arm.

Reference numeral 91 denotes a load arm for supporting the slider 81. Reference numeral 93 denotes a gimbal spring, which functions to keep the distance from the magnetic disk constant. The distance of this magnetic disk from the recording / reproducing separation type magnetic head 3000 formed at the tip of the slider 81 in the starting state of the magnetic disk device is generally referred to as the flying height and is one of the important factors of the performance of the magnetic disk device. is there. In the magnetic disk drive of the present invention, the flying height can be set to 0.2 μm or less.

FIG. 16 shows a recording / reproducing separation head 3000 provided in the magnetic disk drive of the present invention. A read-only MR head 1000 is formed on a nonmagnetic ceramic substrate 101, and a recording-only electromagnetic induction recording head 2000 is formed above it. Incidentally, in FIG.
The layers formed above the signal detection electrodes 60 on the right half of the MR head 1000 and the right half of the MR head 1000 are omitted.

Reference numeral 210 in FIG. 16 is a conductor coil.
Reference numeral 130 denotes an upper and lower magnetic core material. Further, an insulating film indicated by reference numeral 220 is formed between them to provide electrical insulation.

Separated recording / reproducing magnetic head 3 according to the present invention
No. 000, the read operation is not performed by the recording head 2000, so that the magnetic core material 130 does not need the high magnetic permeability and low magnetostriction characteristics required at the time of reading, but only the high Bs characteristics required at the time of writing. You. This allows
As described above, the upper and lower magnetic core members 130 can be made of a high Bs material. Further, since the write characteristics hardly depend on the magnetostriction constant of the magnetic core material 130, the selection of the material and the margin of the material composition are widened, and the manufacture of the recording head 2000 can be facilitated. This can improve the throughput and the yield. Further, the selection of materials and the margin of the material composition can be widened, and an element for improving corrosion resistance, for example, Cr or the like can be added, and the recording head 2000 excellent in corrosion resistance can be manufactured.

FIG. 11 shows a typical magnetoresistance effect type magnetic head according to the present invention, and shows an embodiment most suitable for solving the above problems. FIG. 11 is a perspective view of the same, and FIG. 12 is an enlarged cross-sectional view as seen from the surface facing the medium, that is, the surface facing the magnetic recording medium.

The magnetoresistive head 1000 shown in FIG.
Are a lower shield film 110 on a ceramic substrate 101 such as zirconia, a lower gap film 120 of alumina formed on the lower shield film 110, and an Fe—Mn alloy formed on the lower gap film 120. , NiO, etc., an oxide antiferromagnetic film 45, a separation film 77 of alumina or the like disposed on at least the magnetically sensitive portion of the magnetoresistive film 40 on the oxide antiferromagnetic film 45, The magnetoresistive film 40 is formed on the oxide antiferromagnetic film 45 where the isolation film 77 is not disposed, and the N region is disposed on the magnetoresistive film 40.
b and shunt film 50 and soft film 5 such as Ni-Fe alloy
5, a signal detection electrode 60 such as Nb formed on the soft film 55, an upper gap film 70 formed so as to cover each of the above films, and an upper portion formed above the upper gap film 70. It is formed with the shield film 80. Among these components, the characteristic feature of the present invention relates to each configuration relationship of the magnetic domain control layer, the magnetoresistive film, and the electrode film which plays a role of preventing noise called Barkhausen noise.

Next, the function, material, etc. of each film and each layer will be described.

The upper shield film and the lower shield films 80 and 110 prevent the magnetic field other than the signal from affecting the magnetoresistive film 40 and increase the signal resolution of the magnetoresistive head 1000. The material is preferably a soft magnetic alloy such as a NiFe alloy, a NiCo alloy, or a Co-based amorphous alloy, and its thickness is preferably about 0.5 to 3 μm.

The upper gap film 70 and the lower gap film 120 disposed adjacent to the magnetic shield film 80 or 110 electrically and magnetically isolate the magnetoresistive element from the upper shield film 80 and the lower shield film 110. It is a nonmagnetic material such as glass or alumina such as silicon oxide, and is preferably made of an insulator or the like. Since the thickness of the upper gap film 70 or the lower gap film 120 affects the reproduction resolution of the magnetoresistive head 1000, it depends on the recording density desired for the magnetic disk drive, and is in the range of 0.4 to 0.1 μm. Preferably, there is. The distance between the pair of signal detection electrodes 60 is 0.5 to 0.5.
The magnetic head mounted on the magnetic disk device of the present invention can particularly reduce the reproduction track width, and particularly enables a reproduction track width of about 0.5 to 2 μm. Further, the distance between the signal detection electrodes 60 of the magnetoresistive film 40 is referred to as a magnetic sensing part,
In this portion, signals are read from the magnetic disk.
In order to convert a magnetic signal from the magnetic disk into a linear electric signal, a shunt film 50 and a soft film 55 are provided to apply a lateral bias magnetic field to the magnetoresistive film 40. The magnetoresistive film 40 is made of a Ni-10 to 20-weight Fe alloy, Ni
A ferromagnetic film whose electric resistance changes according to the direction of magnetization, such as a Co alloy, a NiFeCo alloy, or an alloy containing 3 wt% or less of Ru in these alloys, is formed by ion deposition according to the present invention. Its film thickness is 0.00
The 1 μm to 0.045 μm deposition surface has a (100) plane,
Those having fine-grained crystal grains having a particle size of 5 nm or less are preferable. It is preferable that the portion where the separation film is removed and the magnetic domain control film 45 and the magnetoresistive effect film 40 are in direct contact exist at least 3 μm or more in the longitudinal direction of the magnetoresistive effect film. Did not occur, and it was found to function as a magnetic domain control film.

The signal detection electrode 60 is
Sufficient current, for example 1 × 10 ⁶ to 2 × 10 ⁷ A / cm ²
, Au, Nb, Ta with small electric resistance
It is preferable to use a thin film such as

The shunt film 50 acts to apply a lateral bias magnetic field to a level sufficient to make the magnetoresistive film 40 highly sensitive. This bias application direction is perpendicular to the direction given by the magnetic domain control layer. A method using a shunt film to apply a lateral bias magnetic field is called a shunt bias method. In the shunt bias method, as a shunt film, T
A thin metal film of i, Nb, Ta, Mo, W, etc. is formed. The thickness is preferably 0.01 to 0.04 μm. In addition, since the lateral bias magnetic field changes depending on the current flowing through the shunt film, it is necessary to adjust the specific resistance as well as the thickness of the shunt film 50. The value of this specific resistance is preferably about 1 to 4 times the value of the specific resistance of the magnetoresistive film 40.

In addition to the shunt bias method, as a method of applying a lateral bias magnetic field to a level sufficient to increase the sensitivity of the magnetoresistive film 40 suitable for a magnetoresistive head for high density magnetic recording, for example, And a soft film bias method.

In the soft film bias method, a ferromagnetic film having soft magnetic properties is formed adjacent to a magnetoresistive film via a nonmagnetic layer, and a magnetic field generated by a current flowing through the magnetoresistive film is efficiently used. This method is often applied to the magnetoresistive film. As the soft film 55, NiFeRu, Ni
Materials such as FeTa, NiFeRh, CoZrCr, and MnZn ferrite are used.

These methods may be used alone, but a composite bias method in which a soft film 55 is formed on a shunt film 50 (nonmagnetic film) as shown in FIG. In the magnetoresistive head 1000, a composite bias method was employed.

Next, a method of manufacturing the magnetoresistive head 1000 will be described. The following thin film forming method and patterning method used sputtering, etching, and photolithography.

First, Ni to be the lower shield film 110 is used.
An Fe alloy is formed to a thickness of 2 μm, and thereafter, an alumina serving as a lower gap film 120 is formed thereon to a thickness of 0.3 μm. Then, the lower shield film 110 and the lower gap film 120 are processed into a predetermined shape. Here, the end of the lower shield film 110 is processed so as to be inclined with respect to the substrate surface as shown in FIG. this is,
This is to prevent the signal detection electrode 60 formed so as to cover the lower magnetic shield film 110 from breaking at the end of the lower shield film 10. Next, an oxide antiferromagnetic film 45 of 0.04 to 0.2 μm is formed on the upper side of the lower gap film 120. The separation membrane 77 is placed at a predetermined position by about 0.01 to 0.02.
μm is formed. Here, the separation film 77 is formed by a lift-off method or the like so as to be arranged at least at the position of the magneto-sensitive portion of the magnetoresistive effect film 40. In forming the separation film 77, it is preferable to taper both ends of the separation film 77 in order to prevent disconnection of the magnetoresistive film 40. Further, the separation film 77 may be formed by an ion milling method or the like. Next, a NiFe alloy film is formed to a thickness of 400 ° as the magnetoresistive film 40 above the separation film 77, and an Nb film is formed to a thickness of 400 ° as the shunt film 40 to form the soft film 55. A CoZrNb film is formed to a thickness of 400 °. Thereafter, the soft film 55, the shunt film 50, the magnetoresistive film 40, and the separation film 77 are collectively processed into the shape shown in FIG. 1 by a method such as an ion milling method. Thereafter, a two-layer film of gold and titanium serving as the signal detection electrode 60 is applied to a thickness of 0.1 mm.
After being formed to a thickness of 1 μm, it is processed, and further, an alumina to be an upper gap film 70 is formed thereon to a thickness of 0.3 μm. Next, the upper magnetic shield film 80 is formed.
A NiFe alloy film is formed to a thickness of 2 μm, and alumina is formed as a protective film, and the fabrication of the magnetoresistive head 1000 is completed.

By using the head having the structure according to the present invention, high sensitivity can be obtained without reducing the magnitude of the magnetic exchange coupling, and there is no need to clean the magnetoresistive effect film or the like, which causes variations in characteristics and noise. Further, it is possible to provide a magnetoresistive magnetic head having a layer structure that functions as a magnetic domain control layer at an end of the magnetoresistive film. Further, it is possible to provide a method of manufacturing a magnetoresistive magnetic head capable of suppressing variations in performance among a plurality of magnetoresistive magnetic heads caused by variations in characteristics of a magnetic domain control layer. That is, in the magnetoresistive head according to the present invention, by forming the separation film 77 into a desired shape, a portion where the magnetization of the magnetoresistive film freely moves while leaving the function of the magnetic domain control layer is formed. If electrodes are formed in such a region where magnetization freely moves, the gap between the electrodes becomes the reproduction track width as it is,
Barkhausen noise can be prevented and a narrow track can be achieved only by narrowing the gap between the electrodes.
Further, since the sensitivity between the electrodes is substantially uniform, the reproduction sensitivity is also significantly improved.

Next, the materials constituting the magnetic domain control layer 45 and the separation film 77 will be described.

As the magnetic domain control layer 45, an oxide film is desirable in order to increase the ratio of the detected current to the magnetoresistive film. An oxide film having a magnetic domain control effect is preferably a ferromagnetic film or an antiferromagnetic film. However, from the viewpoint of stability against an external magnetic field, blocking temperature, and ease of fabrication, antiferromagnetic nickel oxide (N
iO) is desirable. As a material of the oxide antiferromagnetic film 45, in addition to the above NiO, hematite (α-Fe ₂ O ₃ can be presumed to be substituted).
o, Ni magnetic elements and rare earth magnetic elements La, Ce, P
r, Nd, Pm, Sm, Gd, Tb, Dy, Ho, E
Even if r, Tm, and Yb are added, it can be estimated that substitution is possible.

As the material of the separation membrane 77, the following materials are preferable. That is, A1, Ti, Cu, Nb, Mo, T
a, W, Ti, V, Cr, Rh, Ru, Zr, Pd, A
g, Pt, In, Sn, Re, Os, Ir, Au, alumina (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), titania (TiO ₂ ), hafnia (HfO ₂ ), zirconia (Z
rO ₂ ), carbon (C) and the like are preferable. Further, a binary or higher non-magnetic alloy film combining the above metal elements may be used. Further, a material obtained by adding a third element to the above oxide and carbon may be used. Further, Al ₂ O ₃ , S
Since iO ₂ , TiO ₂ , HfO ₂ , ZrO _{2, and the} like exhibit insulating properties, by using them as the separation film 77, the current density that can flow through the magnetoresistive film 40 can be increased, and the magnetoresistive magnetic head can be used. This is advantageous for high sensitivity.

The thickness of the separation film 77 according to the present invention is 10 to
In the range of 300 °. As shown in FIG. 11 , the magnetoresistance effect film 40 is formed above the separation film 77. Since the magnetoresistive film 40 is formed on the separation film 77, when the thickness of the separation film 77 is large, the magnetoresistive film 40 is disconnected. For this reason, the thickness of the separation film is desirably thin, and is preferably 200 ° or less. On the other hand, the critical film thickness by which a separation film can be made a continuous film by a film forming technique such as a sputtering method is 50 ° or more. Therefore, it is desirable that the thickness of the separation film 77 be in the range of 50 to 200 °. Further, in order to effectively transmit the bias magnetic field from the end, it is desirable that the thickness of the magnetoresistive film 40 is larger than the thickness of the separation film.

The magnetic domain control layer according to the present invention comprises a shield film and constitutes an MR head. A non-shield type magnetoresistive effect magnetic head, a yoke type magnetoresistive effect magnetic head, a magnetoresistive magnetic tape. Effect type magnetic head,
Further, the present invention can be applied to a magnetic sensor using a mere magnetoresistance effect of a ferromagnetic film.

The shield films 110 and 80 constituting the medium facing surface of the magnetoresistive thin-film magnetic head in this embodiment contain an iron-nickel alloy, the antiferromagnetic film 45 contains an iron-manganese alloy, and the magnetoresistive film 40 contains 1% by weight of Ru. Iron-nickel permalloy, a film obtained by oxidizing the separation film 77 by irradiating Al,
The shunt film 50 is made of Nb, the soft film 55 is made of an Ni-Fe alloy containing 1% by weight of Ru, and the electrode 60 is made of Nb. The shape of each film defines a pattern by the photoresist. The film thickness is converted from the ion beam current. Each of the metal thin films is formed in a desired range of 10 to 3000 nm. In the IBD method, after a metal element is converted into a positively charged ion, the metal element is accelerated by an electric field by a negative electrode for extracting the ion, taken out into a vacuum vessel, and isotope element of the same mass number is extracted by a mass separation magnet. After selecting the ions, the kinetic energy of each ion is 2
By reducing the speed to 00 eV or less, the same mass number of metal is deposited.

The film formation by the IBD method in this example was performed using the apparatus shown in Example 1, and each element as an ion source used an oxide. The degree of vacuum was 10 ⁻⁵ Pa, the acceleration voltage of the ion source was 50 V, and the substrate was 300 ° C. The mass number of each element is the same as that shown in Example 2. The alloy thin film was alloyed by depositing every layer within several atoms by switching at a predetermined current value of the electromagnet 28 according to the substance on which each element is deposited. Preferably, it is deposited every atomic layer (within 10 seconds as a deposition time). Each film has a particle size of 5 nm or less, particularly about 1 n.
m, and the closest-packed surface with a body orientation of (110) for the body-centered cubic lattice and (100) for the face-centered cubic lattice is formed, and a highly corrosion-resistant film is formed. Was formed.

Further, in particular, the magnetoresistive film 40 of this embodiment has a thickness of about 1 μm, whereas the magnetoresistive film 40 of the present embodiment has a thickness of about 1 μm. Since it was possible to form a film as thin as .02 μm, it was found that higher-performance reading was possible.

Similarly, instead of Nb, a W magnetic head electrode was obtained by the IBD method. After the oxide WO ₃ is ionized as plasma by mixing with vapor of carbon tetrachloride, it is formed after the soft film 55 in order to selectively laminate W184 at the position of the electrode 60 shown in FIG. Conventionally, the W electrode corroded during the polishing and cleaning process of the element surface becomes highly corrosion resistant by this method, and the specific resistance after these polishing and cleaning processes is less than 15 μΩcm, hardly increases, and a highly reliable one can be obtained. Was.

As another embodiment, the shield films 110 and 8
0, the magnetoresistive film 40, and the soft film 55 are formed of a permalloy alloy by a sputtering method, and the respective surfaces are 5 nm on the (110) plane with the purity of 5 nines of iron 58 under the conditions of No. 7 of Example 1. Was formed. As a result, a magnetic head having high corrosion resistance and high sensitivity was obtained.

[0118]

According to the present invention, a high-purity metal thin film can be obtained, and an excellent corrosion-resistant film can be obtained. as a result,
Since a magnetic head having high sensitivity and high corrosion resistance is manufactured in the magnetic disk drive, the magnetic head is highly reliable.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an ion beam deposition apparatus of the present invention.

FIG. 2 is a configuration diagram of an ion source.

FIG. 3 is a diagram showing the relationship between current density in NaCl and potential.

FIG. 4 is a diagram showing a relationship between current density in H ₂ SO ₄ and potential.

FIG. 5 is a diagram showing a relationship between an impurity concentration and a degree of vacuum reached during film formation.

FIG. 6 is a diagram showing the relationship between the amount of corrosion and the degree of vacuum reached during film formation.

FIG. 7 is a diagram showing the relationship between the amount of corrosion and the amount of iron surface impurities.

FIG. 8 is a diagram showing a relationship between a corrosion amount and a surface ratio.

FIG. 9 is a diagram showing the relationship between the amount of corrosion and the work function of iron.

FIG. 10 is a configuration diagram of a magnetic disk drive of the present embodiment.

FIG. 11 is a sectional view of a magnetoresistive head.

FIG. 12 is an enlarged view of a main part of FIG. 11;

FIG. 13 is a perspective view showing the overall configuration of a magnetic disk drive.

FIG. 14 is a perspective view of a slider on which a magnetic head is formed.

FIG. 15 is a perspective view in which a slider is provided on a load arm.

FIG. 16 is a partial cross-sectional perspective view of a recording / reproducing separation head.

[Explanation of symbols]

1 ... Ion beam, 3 ... Ionized raw material, 4 ... Discharge chamber,
5: slit, 6: magnetic field coil, 7: gas introduction hole, 9:
Plasma, 10: vacuum pump, 11: first electrode, 12 ...
Power supply, 13: second electrode, 15: ion acceleration power supply, 20 ...
Microwave ion source, 21: waveguide, 22: magnetron, 23: vacuum pipe for transporting ion beam, 24: substrate load lock chamber, 25: ion implantation chamber, 26: heater,
27 ... Lens system, 28 ... Electromagnet for 90 ° deflection mass separation, 29 ... Substrate support means, 30 ... Insulator, 31 ... Reflection type high energy electron beam diffraction, 32 ... Electron gun,
40 ... Magnetoresistance effect film, 45 ... Oxide antiferromagnetic film, 50
Shunt film, 55 soft film, 70 upper gap film, 77 separation film, 80 upper shield film, 81 slider, 101 ceramic substrate, 110 lower shield film, 112 magnetic disk, 120 magnetic gap ,
130 ... magnetic core material, 210 ... conductor coil, 1000 ...
MR head, 2000: recording head, 3000: recording / reproducing separation head, 4000: magnetic disk drive.

────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. ⁷ Identification code FI H01F 41/20 H01F 41/20 (72) Inventor Moriaki Fuyama 4026 Kuji-cho, Hitachi City, Ibaraki Pref. 56) References JP-A-2-251104 (JP, A) JP-A-4-176862 (JP, A) JP-A-3-267365 (JP, A) JP-A-5-135331 (JP, A) 62-3541 (JP, B2) (58) Fields investigated (Int. Cl. ⁷ , DB name) C23C 14/00-14/58 G11B 5/00-5/024 G11B 5/33-5/39 H01F 10/00-10/32 H01F 41/14-41/34

Claims (11)

(57) [Claims] 1. A single element metal having a plurality of mass numbers, said metal having a single mass number, wherein the purity of said metal having a single mass number is 99.99% or more. And high corrosion resistant metal. 2. A member having a metal thin film on a substrate surface, wherein the thin film is made of a metal of one element or an alloy of two or more metals, and each of the metals has a plurality of mass numbers. The metal having a single mass number has a purity of 99.99.
% Or higher. 3. A member having a metal thin film on the surface of a substrate, wherein the thin film is a metal shell of one element having a plurality of mass numbers.
The metal having a single mass number,
The purity of the metal having the number is 99.99% or more, and is deposited on the closest surface in the deposition direction, and the crystal grain size is 0.5 μm.
m or less. 4. An elemental metal bag having a plurality of mass numbers.
Chi, the metal ionizes the metal and the ionized and separated into single mass number, the acceleration to be deposited so as a single mass number of metal said separated sputtering no Tomo
The purity of the metal having the single mass number is 99.99% or more.
High corrosion resistant metal production process, characterized in that. 5. The method according to claim 1, wherein the metal comprises at least two metals, each of the metals having a plurality of mass numbers, and ionizing the metal;
Each of the ionized elements is separated into a single mass number,
The separated single mass elements are accelerated so that sputtering does not substantially occur, and are alternately deposited for each of the elements, and each of the single mass elements has a purity of 99.
A method for producing a highly corrosion-resistant metal, which is 99% or more. 6. A method for manufacturing a member for forming a metal thin film on a surface of a substrate, wherein a metal of one element having a plurality of mass numbers is used.
The metal ionized and separated into single mass number, with a single mass number of metal said separated accelerating so as not to cause substantial sputtering is deposited on the substrate surface,
A method for producing a high corrosion resistant member, wherein the purity of the single mass number metal is 99.99% or more . 7. An elemental gold having a plurality of mass numbers on a substrate
Depositing a single mass of said metal of the genus ;
A metal ion implantation chamber in which the purity of the single mass number metal is 99.99% or more, a discharge chamber for forming the one element metal ion, an ion acceleration power supply for accelerating the metal ion, ion beam transport pipe for introducing the metal ions in the metal ion implantation chamber, extraction power source to introduce gold <br/> genus ions of the one element is accelerated to high speed within the pipe, it is introduced in the fast single mass number of the metal ions
Mass separating the mass separation electromagnet and the mass separated before
An apparatus for producing metal, comprising an extraction voltage control lens for decelerating the metal ions. 8. A magnetic shield film, a lower gap film, a magnetic domain control film, a magnetoresistive film for converting a magnetic signal into an electric signal using a magnetoresistive effect on a ceramic substrate, a shunt film, a soft film, and A magnetic disk drive equipped with a magnetoresistive magnetic head having a pair of electrodes sequentially passing a signal detection current to the magnetoresistive film, wherein at least one of the films is made of one element or two or more elements. element
Is a single mass number among those having multiple mass numbers
Having a purity of 99.
A magnetic disk drive comprising at least 99% of any one of a metal, an alloy , and a compound. 9. A magnetoresistive film for converting a magnetic signal into an electric signal using a magnetoresistive effect, a pair of electrodes for flowing a signal detection current through the magnetoresistive film, and the magnetoresistive film. A magnetic disk drive equipped with a magnetoresistive head having a magnetic domain control layer for controlling a magnetic domain of the magnetic disk, wherein the magnetoresistive film is made of one element metal or two or more elements.
Of each metal, each element of each metal
Of those having multiple mass numbers, only one has
Pure metal having the single mass number
Degree magnetic disk apparatus according to claim der Rukoto 99.99%. 10. A magnetoresistive film for sensing external magnetization to change the direction of magnetization, a pair of electrodes for flowing a current through the magnetoresistive film, and a magnetic domain control layer for controlling magnetic domains of the magnetoresistive film. Wherein the magnetoresistive film is made of a metal of one element or an alloy of two or more metals,
Each of the elements of the metals has a plurality of mass numbers
Among those having a single mass number,
The purity of the metal having the single mass number is 99.99% or more.
There, and granular crystals of becomes finer crystal grains, the magnetic disk device comprising a Turkey that its deposition surface having a desired single plane index. 11. A magnetoresistive film for converting a magnetic signal into an electric signal by using a magnetoresistive effect, a pair of electrodes for flowing a signal detection current through the magnetoresistive film, and the magnetoresistive film. A read head portion having a magnetic domain control layer for controlling the magnetic domain of the first magnetic pole, a first magnetic pole, a second magnetic pole that is in contact with the first magnetic pole on one side and forms a gap on the other, and a coil that winds between the magnetic poles And a recording / reproducing separation type thin-film magnetic head having a recording head portion for converting a current flowing through a coil into a magnetization, as a basic configuration, wherein the magnetoresistive effect film is made of one element metal or 2 or more elements
Of each metal, each element of each metal
Of those having multiple mass numbers, only one has
Pure metal having the single mass number
Degree is 99.99% or more, and a magnetic disk apparatus according to claim Rukoto to have a thickness of <br/> fine granular crystals of 5 to 100 nm.