JP3129281B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device, wherein a semiconductor substrate on which elements are formed and a mold resin for encapsulating the semiconductor substrate have different coefficients of thermal expansion. To relieve the thermal strain caused by
The present invention relates to a method for manufacturing a semiconductor device having a buffer coat (thermal stress buffer) film between a semiconductor substrate and a mold resin.

[0002]

2. Description of the Related Art Conventionally, in a method of manufacturing a semiconductor device of this type, various mounting techniques called a package have been developed with the increase in the number of semiconductor elements and the degree of integration. Many mounting techniques used so far include a method of bonding a semiconductor element to a metal plate having an external lead electrode (hereinafter referred to as a lead frame) using a solder paste or the like, and a method of bonding an adhesive tape on a semiconductor element. For example, a method in which a chemical solution treatment is not performed after the above-mentioned buffer coat film is formed, such as a method in which a lead frame is adhered through the substrate, is employed.

[0003] In some mounting techniques, a method of forming a metal pillar on an external lead electrode pad (hereinafter referred to as a bonding pad) and pulling the pillar to the outside is adopted. In this method, after a metal pillar is formed, a chemical solution treatment is performed in which the used resist is stripped with an organic solvent such as, for example, propylene glycol monomethyl ether acetate (PGMEA), methyl ethyl ketone (MEK), or butyl acetate. The polyimide used as the coating film had sufficient resistance to these organic solvents.

However, in the conventional method described above,
Since it has become difficult to cope with high integration and high speed of semiconductor elements, a new method has been adopted.
This new method is called the flip chip method. A metal film is formed on a buffer coat film, a bonding pad pattern is formed on the metal film, and a solder ball is formed on the formed pad pattern. Thereafter, the surface of the semiconductor element is cleaned. In the flip chip method, chemical processing is performed during pattern processing of metal films and surface cleaning. In this chemical processing, various chemicals such as inorganic acids such as sulfuric acid and hydrofluoric acid, and organic solvents such as acetone and amine-based solutions are used. Chemicals are used.

Here, a method of manufacturing a semiconductor device using a conventional flip chip method (hereinafter, also referred to as a first conventional flip chip method) will be specifically described with reference to FIGS. First, the element and the metal wiring pattern 1a
A passivation film, for example, a silicon nitride film 3a having a thickness of 1 μm is formed on the semiconductor substrate 2a in which is formed by a chemical vapor deposition method (hereinafter, referred to as a CVD method) (FIG. 7A). Next, pattern processing is performed on the silicon nitride film 3a by photolithography so that the upper surface of the bonding pad formation region 4a of the metal wiring pattern 1a is exposed (FIG. 4B).

Next, a polyimide film 5a having a thickness of, for example, 20 μm is formed as a buffer coat film on the patterned silicon nitride film 3a (FIG. 3C). The film 5a is patterned to form a bonding pad recess 6a having a predetermined shape (FIG. 4D). Next, the patterned polyimide film 5
By subjecting a to a heat treatment in a nitrogen atmosphere using a suitable heat treatment furnace, the solvent in the polyimide film 5a is removed and a polymer condensation reaction is performed. This allows
The polyimide film 5a is cured to become a cured polyimide film 7a (FIG. 8E).

FIGS. 9 and 10 show a plurality of examples of a heat treatment sequence in the heat treatment step.
FIG. 10 shows a heat treatment sequence when all the heat treatment steps including the highest soaking heat treatment are performed in a nitrogen atmosphere. FIG. Shows a heat treatment sequence in the case where oxygen gas is introduced to activate (activate) the adhesion assistant contained in the above.
In any of the heat treatment steps, the highest uniform heat treatment has an oxygen concentration of 0.5% in order to prevent oxidation of the polyimide film 5a.
It must be performed in the following nitrogen atmosphere.

Referring again to FIG. 8, a barrier metal film 10a formed by laminating, for example, a TiW film 8a and a Cu film 9a on the polyimide cured film 7a obtained by the above-described heat treatment by a sputtering technique. After forming a resist pattern on the barrier metal film 10a by a photolithography method, a concave pattern of a predetermined shape is processed on the barrier metal film 10a by a wet etching method to form a bonding pad 11a. (FIG. 8
(F)).

As a chemical solution used in this wet etching, a chemical solution obtained by mixing sulfuric acid, hydrogen peroxide solution, and pure water at a ratio of, for example, 2: 3: 12 is used for etching the Cu film 9a. For etching the film 8a, a chemical solution containing hydrogen peroxide as a main component is used.
Next, the solder balls 12 are placed on the bonding pads 11a.
Then, the surface is washed with an amine-based solution such as monoethanolamine to remove the flux, the chip is mounted, and sealed with a mold resin.

On the other hand, as shown in FIGS. 11 and 12, a flip chip method (hereinafter, also referred to as a second conventional flip chip method) for patterning a passivation film using a patterned buffer coat film as a mask is also known. ing. In this method, a CVD method is first performed on a semiconductor substrate 2b on which elements and a metal wiring pattern 1b are formed.
According to the method, as a passivation film, for example, a thickness of 1
A silicon nitride film 3b of μm is formed (FIG. 11)
(A)). Next, a polyimide film 5b having a thickness of, for example, 20 μm is formed as a buffer coat film on the formed silicon nitride film 3 (FIG. 2B).

Next, a pattern processing is performed on the bonding pad formation region of the polyimide film 5b by using a photolithography technique to form a concave portion 6b (FIG. 3 (c)). By performing a heat treatment in a nitrogen atmosphere using a suitable heat treatment furnace, the solvent in the polyimide film 5b is removed and a condensation reaction of the polymer is performed. As a result, the polyimide film 5b is cured to become a cured polyimide film 7b (FIG. 4D). The heat treatment sequence in this heat treatment step is substantially the same as that described in the first conventional flip chip method (see FIGS. 9 and 10).

Then, the upper surface of the bonding pad formation region 4b of the metal wiring pattern 1b is exposed to the silicon nitride film 3b by a dry etching technique using the polyimide cured film 7b obtained by this heat treatment as a mask. Pattern processing is performed (FIG. 12E).
Next, a barrier metal film 10b composed of, for example, a two-layer film of a TiW film 8b and a Cu film 9b is formed on the patterned polyimide cured film 7b by using a sputtering technique. A resist pattern is formed on the barrier metal film 10b by a wet etching method, and the barrier metal film 1 is formed by a wet etching method.
A bonding pad 11b is formed by patterning a predetermined shape on the bonding pad 11b (FIG. 1F).

As a chemical solution used for performing the wet etching, a chemical solution obtained by mixing sulfuric acid, hydrogen peroxide solution and pure water at a ratio of, for example, 2: 3: 12 is used for etching the Cu film 9b. For the etching of the TiW film 8b, a chemical solution containing hydrogen peroxide as a main component is used. Using these chemicals, TiW film 8b and Cu film 1
After performing each pattern processing, the solder ball 1 is placed on the bonding pad 13 of the barrier metal film 10b.
2b is formed (FIG. 9 (g)), and thereafter, in order to remove the flux, the surface is washed with an amine-based solution, for example, monoethanolamine, and the chip is mounted and sealed with a mold resin. .

[0014]

By the way, in the first and second conventional methods of manufacturing a semiconductor device by the flip-chip method, sulfuric acid, hydrofluoric acid, and the like are used at the time of pattern processing and surface cleaning of the barrier metal films 10a and 10b. Chemical treatment using acetone, an amine-based solution, or the like is performed. However,
The buffer coat films such as the polyimide cured films 7a and 7b have a problem that the resistance to the above-mentioned chemical solution is low, cracks or the like are generated in the buffer coat film, and the reliability of the device may be adversely affected. For example, the conditions (maximum oxygen concentration of 0.5
% Or less in a nitrogen atmosphere), when a surface treatment is performed using a chemical solution used in a new mounting method, for example, sulfuric acid, hydrogen peroxide solution, an amine-based aqueous solution, or the like, cracks occur in the polyimide film 5 serving as a buffer coat film. There is a possibility that the reliability may be adversely affected.

Means for improving the chemical resistance of the buffer coat film may be to raise the heat treatment temperature or to perform the heat treatment in the air or in an atmosphere having an oxygen concentration of 20% or more. Since the oxygen concentration is increased, the polyimide film 5 is colored by being oxidized, and the color of the buffer coat film is blackened, making it difficult to recognize the chip at the time of assembling, or the polymer structure in the polyimide film 5 may be deteriorated. And the mechanical strength, electrical properties, adhesion, and the like are reduced.

The present invention has been made in view of the above circumstances, and minimizes a change in the color tone of a buffer coat film without deteriorating mechanical strength, electrical properties, adhesion, and the like. It is an object of the present invention to provide a method for manufacturing a semiconductor device capable of improving chemical resistance.

[0017]

According to a first aspect of the present invention, there is provided a buffer coat film comprising a resin containing a carbocyclic compound as a main component on a semiconductor substrate having an element formed thereon. And a step of heat-treating the buffer coat film, wherein the heat treatment step is performed when the oxygen concentration X is 0.5 v / v% <
It is characterized in that it is performed in an atmosphere within the range of X ≦ 20 v / v%.

According to a second aspect of the present invention, there is provided the method of manufacturing a semiconductor device according to the first aspect, wherein the oxygen concentration X is at least 0.5 v / v% <X ≦ 20 v / v% at the highest soaking temperature.
Is performed in an atmosphere within the range of (1).

According to a third aspect of the present invention, there is provided the method of manufacturing a semiconductor device according to the first aspect, wherein the resin has at least one selected from the group consisting of polyimide, polybenzoxazole and benzocycloolefin. It is characterized by becoming.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the third aspect, wherein the polyimide comprises:
It is a photosensitive polyimide.

According to a fifth aspect of the present invention, there is provided the method of manufacturing a semiconductor device according to the third aspect, wherein the polybenzoxazole is polybenzo-1,3-oxazole.

According to a sixth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the third aspect, wherein the benzocycloolefin is benzocyclobutene.

[0023]

Embodiments of the present invention will be described below with reference to the drawings. The description will be made specifically using an embodiment. First Embodiment FIGS. 1 and 2 are process diagrams showing a method for manufacturing a semiconductor device according to a first embodiment of the present invention. In order to manufacture the semiconductor device of this example, first, for example, a silicon nitride film 3c having a thickness of 1 μm is formed as a passivation film on a semiconductor substrate 2c on which elements and metal wiring patterns 1c are formed by a CVD method. (FIG. 1 (a)). Next, a photoresist is applied onto the silicon nitride film 3c and exposed, and a necessary pattern such as a bonding pad, a redundant circuit switching fuse (redundancy fuse),
After forming a pattern such as a scribe line, the silicon nitride film 3c is patterned by dry etching using the resist pattern as a mask. As a result, the silicon nitride film 3c is exposed, and the bonding pad formation region 4c of the metal wiring pattern 1c is exposed (FIG. 2B). Next, on the patterned silicon nitride film 3c, for example, a polyimide or the like is applied to form a polyimide film 5c as a buffer coat film (FIG. 3C). Next, the polyimide film 5c is patterned by photolithography to form a bonding pad recess 6c or the like having a predetermined shape (FIG. 4D).

Next, the patterned polyimide film 5c is subjected to a heat treatment in a heat treatment sequence as shown in FIG.
An imidation reaction of the polyimide film 5c is performed. The polyimide film 5c having undergone the imidization reaction is cured to become a cured polyimide film 7c (FIG. 2E). In this heat treatment sequence, as shown in FIG. 3, the atmosphere in all heat treatment periods including the preliminary heat treatment at approximately 50 ° C., the heat treatment at 350 ° C. ± 10 ° C., and the oxygen concentration at approximately 50 ° C. Adjust so that X is an appropriate concentration in the range of 0.5 v / v% <X ≦ 20 v / v%, for example, about 19 v / v%, and the balance is nitrogen. Here, the temperature at which the object to be heat-treated is taken in and out of the furnace is set at about 50 ° C. for the safety of workers, and the provision of the preliminary soaking at about 150 ° C. The reason why the maximum soaking temperature was set at 350 ° C. ± 10 ° C. is to promote the reaction.

Returning to FIG. 2, the explanation will be continued. The polyimide cured film 7c obtained by the above-described heat treatment (FIG. 3)
On the exposed surface of the metal wiring pattern 1c (the concave portion 6c for bonding pad), for example,
After coating with the TiW film 8c having a thickness of 0.2 μm, and subsequently coating with the Cu film 9c having a thickness of 5 μm, a barrier metal film 10c having a multilayer structure is formed. Thereafter, the barrier metal film 10c is patterned by a photolithography method, and the barrier metal film 1c is formed by a subsequent wet etching method using the resist pattern as a mask.
The bonding pad 11c is formed by removing an unnecessary portion of 0c (FIG. 2F).

In the wet etching of this example, a chemical solution obtained by mixing sulfuric acid, hydrogen peroxide solution and water (pure water) at a ratio of about 2: 3: 12 is used for etching the Cu film 9c.
Hydrogen peroxide solution is used for etching the TiW film 8c. Next, a solder ball 12c is placed on the formed bonding pad 11c using a jig,
Thereafter, heat treatment is performed to bond the solder balls 12c onto the bonding pads 11c (FIG. 9G). Thereafter, the surface is cleaned using an amine-based solution, for example, monoethanolamine, as a cleaning liquid to remove the flux.

Second Embodiment FIGS. 4 and 5 are process diagrams showing a method of manufacturing a semiconductor device according to a second embodiment of the present invention. The configuration of this example is significantly different from that of the first embodiment in that the buffer coat film is formed on the unpatterned passivation film instead of the procedure of patterning the passivation film prior to the application of the buffer coat film. After coating and forming the buffer coat film, the passivation film is patterned using the patterned buffer coat film as a self-aligned mask. , 0.5 only for maximum soaking
The point is that v / v% <X ≦ 20 v / v%.

In order to manufacture the semiconductor device of this example, first, a passivation film, for example, a silicon nitride film 3d having a thickness of 1 μm is formed on a semiconductor substrate 2d on which elements and metal wiring patterns 1d are formed by a CVD method. Is formed (FIG. 4A). Next, a polyimide film 5d is formed as a buffer coat film by spin-coating polyimide on the silicon nitride film 3d (FIG. 4B).

Next, using a photolithography technique, pattern processing is performed on a region where the bonding pad of the polyimide film 5d is to be formed, thereby forming a concave portion 6d (FIG. 3C). Next, using a suitable heat treatment furnace, the polyimide film 5d in which the concave portions 6d are formed is subjected to a heat treatment in a nitrogen atmosphere in a heat treatment sequence as shown in FIG. The solvent is removed and a condensation reaction of the polymer is carried out. Thereby, the polyimide film 5d is cured, and the polyimide cured film 7 is cured.
d (FIG. 2D).

In this heat treatment sequence, as shown in FIG. 6, the atmosphere at the time of the highest uniform heat treatment at 350 ° C. ± 10 ° C. is set so that the oxygen concentration X is 0.5 v / v% <X ≦ 20 v / v.
%, For example, approximately 19 v / v%, with the balance being nitrogen (oxygen supply is stopped during periods other than the highest soak). Then, a pattern is formed on the silicon nitride film 3d by a dry etching technique using the polyimide cured film 7d obtained by this heat treatment as a self-alignment mask so that the upper surface of the bonding pad formation region 4d of the metal wiring pattern 1d is exposed. Processing is performed (FIG. 5E). Next, the exposed surface of the cured polyimide film 7d and the metal wiring pattern 1d (the region 4d where the bonding pad is to be formed) is formed by sputtering, for example, using a TiW film 8d having a thickness of 0.2 μm and a Cu film having a thickness of 5 μm. It is covered with a barrier metal film 10d composed of a two-layer film with the film 9d. Thereafter, patterning is performed on the barrier metal film 10d by a photolithography method, and an unnecessary region of the barrier metal film 10d is wet-etched and removed using the resist pattern as a mask to form a bonding pad 11d ( FIG. The etching conditions in this case are as follows:
Since the conditions are almost the same as those described in the embodiment, the description thereof will be omitted. Next, a solder ball 12d is placed on the bonding pad 11d by using a jig, and then a heat treatment is performed to attach the solder ball 12d to the bonding pad 1d.
It is adhered on 1d (FIG. 9 (g)). Thereafter, flux removal is performed using an amine-based solution, for example, monoethanolamine, as a cleaning solution.

Next, with reference to Tables 1 to 4, a description will be given of test results in comparison with the prior art in order to confirm the effects of the first and second embodiments. Here, as the conventional technology 1, the oxygen concentration X is X <0.5 v / v.
% Under the heat treatment conditions in the range of 20% / v
Under the heat treatment conditions in the range of v% <X, each of the semiconductor devices to be sampled was manufactured, and then various tests were performed.
A comparison with the example was performed. Table 1 shows a comparison test result of the film characteristics of the cured polyimide film as the buffer coat film.

[0032]

[Table 1]

According to Table 1, the samples obtained by the first and second examples had a mechanical strength of 13 kg / mm ² , a mechanical elongation of 11%, a Young's modulus of 300 kg / mm ² , and a transmittance of 300 kg / mm ² . 66.2 to 70.5%, whereas the mechanical strength of the samples prepared by the prior arts 1 and 2 is 10 to 11 kg.
/ Mm ² , mechanical elongation 12%, Young's modulus 260-2
80 kg / mm ² , and the transmittance is 47 to 72%, the film quality of the polyimide cured film of the first and second examples is
It can be seen that there is almost no difference as compared with the prior arts 1 and 2.

Table 2 shows the results of a comparative test on the chemical resistance of the cured polyimide film. Here, the sample was immersed in a chemical solution at room temperature for about 10 minutes, and then taken out. The surface of the cured polyimide film was observed using a microscope. The sample with no was evaluated as no resistance (x).

[0035]

[Table 2]

According to Table 2, the samples of the first and second embodiments have chemical resistance to all the chemicals tested, while the conventional technology 1 (oxygen concentration X X <0.5v
/ V%) shows that the chemical resistance to hydrofluoric acid, sulfuric acid and monoethanolamine is reduced. Note that the conventional sample 2 (when the oxygen concentration X is 20 v / v% <X) had chemical resistance to all the chemicals tested.

Table 3 shows a high-temperature high-humidity acceleration test for evaluating the adhesion of the polyimide cured film under the substrate, that is, a so-called PCT.
(Pressure Cooker Test) shows the results of the test. Here, after leaving the sample in an atmosphere of 125 ° C. for a predetermined time, a total number of samples obtained by performing a tensile test at a predetermined strength is 1
The number of peelings for 00 pieces is shown. The tensile test was performed according to JIS standards.

[0038]

[Table 3]

According to Table 3, while none of the first and second examples peeled off even after standing for 500 hours, the conventional technique 2 (oxygen concentration X was 20 v / v% <
In the case of X), the number of peelings increased as the standing time became longer, and after leaving for 300 hours, all peeled off.
Conventional technology 1 (oxygen concentration X is X <0.5 v / v%)
With respect to the sample, none was peeled off even after standing for 500 hours.

Table 4 shows the mold resin adhesion of the cured polyimide film. Here, the adhesion was evaluated by measuring the shear strength before and after the PCT comparison test. The conditions for the PCT comparison test were that the sample was left in an atmosphere at 125 ° C. for 48 hours.

[0041]

[Table 4]

According to Table 4, while those of the first and second embodiments have a shear strength of 4.0 kg / cm ² even after being left for 48 hours, those of the prior arts 1 and 2 have a shear strength of 4.0 kg / cm ^2. It can be seen that the shear strength has dropped to 3.5 kg / cm ² or less.

As described above, in the first and second embodiments, the film characteristics of the cured polyimide film are almost the same as those of the prior art, and furthermore, in any of the chemical resistance, the base adhesion, and the mold resin adhesion. Is also superior to that of the prior art. On the other hand, in the case of the prior art, it is clear that either the chemical resistance or the base adhesion is greatly reduced, and the mold resin adhesion is also reduced.

As described above, according to the structures of the first and second embodiments, as shown in FIGS. 3 and 6, at least the highest uniform heat treatment is applied to the patterned polyimide films 5c and 5d. X is 0.5 v / v% <X ≦ 20 v /
v%, the imide ring-closing rate in the polyimide films 5c and 5d can be increased during the maximum soaking process, and the chemical resistance is improved without changing the film quality. The polyimide cured films 7c and 7d can be obtained. Therefore, the cured polyimide film 7
TiW films 8c and 8d formed on c and 7d, and Cu
A barrier metal film 10c having a laminated structure including the films 9c and 9d;
10d pattern processing can be performed safely and reliably.

In addition, the maximum soaking heat treatment was carried out when the oxygen concentration X was 0.1.
By performing in an atmosphere within the range of 5v / v% <X ≦ 20v / v%, the imide ring closure rate in the polyimide films 5c and 5d can be increased, and the coloring of the polyimide films 5c and 5d due to oxidation can be suppressed. Recognition at the time of assembly declines, and eventually
Work errors can be prevented.

Further, by setting the oxygen concentration X in the atmosphere in the highest uniform heat treatment to be in the range of 0.5 v / v% <X ≦ 20 v / v%, the specification of the oxygen concentration X can be relaxed. The configuration of the apparatus can be simplified as compared with a conventional apparatus using a nitrogen atmosphere where the oxygen concentration X is X <0.5 v / v%. Further, since the replacement time with nitrogen can be reduced, the time required for the heat treatment step can be reduced,
The production efficiency in the heat treatment step can be improved. That is, according to the configurations of the first and second embodiments, the change in the color tone of the cured polyimide film 7 is minimized, and the mechanical strength, electrical properties, chemical resistance, base adhesion, and mold resin Any of the adhesiveness can be improved.

Although the embodiment of the present invention has been described in detail with reference to the drawings, the specific configuration is not limited to this embodiment, and there are design changes and the like without departing from the gist of the present invention. Is also included in the present invention. For example, in the above-described embodiment, the case where a photosensitive polyimide resin is used as the buffer coat film has been described. However, the present invention is not limited to this, and a resin containing a carbocyclic compound other than the polyimide resin, for example, polybenzo-1,3-oxazole, etc. Benzocycloolefin such as polybenzoxazole and benzocyclobutene may be used.

[0048]

As described above, according to the structure of the present invention, a step of forming a buffer coat film mainly containing a resin containing a carbocyclic compound on a semiconductor substrate on which an element is formed, Heat treating the buffer coat film, wherein the oxygen concentration X is 0.5 v / v%.
<X ≦ 20 v / v%, so that the change in the color tone of the buffer coat film is minimized and the mechanical strength, electrical properties, adhesion, etc. are not reduced. Chemical resistance can be improved.

That is, when the oxygen concentration X is 0.5 v / v% <X
By performing the heat treatment in an atmosphere within a range of ≦ 20 v / v%, the conditions of the conventional soaking treatment (the oxygen concentration is 0.5 v / v
% Nitrogen atmosphere), the ratio of ring closure in the buffer coat film can be increased, and as a result, chemical resistance can be improved.

[Brief description of the drawings]

FIG. 1 is a process diagram illustrating a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a process diagram illustrating a method for manufacturing the semiconductor device.

FIG. 3 is a view showing a heat treatment sequence in the same manufacturing method.

FIG. 4 is a process diagram illustrating a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 5 is a process diagram for describing a method for manufacturing the same semiconductor device.

FIG. 6 is a view showing a heat treatment sequence in the same manufacturing method.

FIG. 7 is a process diagram illustrating a conventional method for manufacturing a semiconductor device.

FIG. 8 is a process diagram for describing the method for manufacturing the semiconductor device.

FIG. 9 is a diagram showing an example of a conventional heat treatment sequence.

FIG. 10 is a diagram showing another example of a conventional heat treatment sequence.

FIG. 11 is a process diagram for explaining another conventional method for manufacturing a semiconductor device.

FIG. 12 is a process diagram for describing the method for manufacturing the semiconductor device.

[Explanation of symbols]

1c, 1d Metal wiring pattern 2c, 2d Semiconductor substrate 3c, 3d Silicon nitride film 5c, 5d Polyimide film 7c, 7d Polyimide cured film (buffer coat film) 8c, 8d TiW film 9c, 9d Cu film 10c, 10d Barrier metal film 11c , 11d bonding pad

──────────────────────────────────────────────────の Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/312 H01L 21/60 H01L 21/56 H01L 23/29-23/31

Claims (6)

(57) [Claims] 1. A method comprising: forming a buffer coat film containing a resin containing a carbocyclic compound as a main component on a semiconductor substrate on which an element is formed; and heat-treating the buffer coat film. A method for manufacturing a semiconductor device, wherein the heat treatment step is performed by setting an oxygen concentration X to 0.5 v / v% <X ≦
A method for manufacturing a semiconductor device, wherein the method is performed in an atmosphere within a range of 20 v / v%. 2. In the heat treatment step, at least the highest uniform heat treatment is performed when the oxygen concentration X is 0.5 v / v% <X ≦ 20 v / v.
2. The method of manufacturing a semiconductor device according to claim 1, wherein the method is performed in an atmosphere within the range of%. 3. The method according to claim 1, wherein the resin comprises at least one selected from the group consisting of polyimide, polybenzoxazole and benzocycloolefin. 4. The method according to claim 3, wherein the polyimide is a photosensitive polyimide. 5. The method according to claim 3, wherein the polybenzoxazole is polybenzo-1,3-oxazole. 6. The method according to claim 3, wherein the benzocycloolefin is benzocyclobutene.