Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JP3131252B2 - Vacuum equipment - Google Patents
[go: Go Back, main page]

JP3131252B2 - Vacuum equipment - Google Patents

Vacuum equipment

Info

Publication number
JP3131252B2
JP3131252B2 JP03246655A JP24665591A JP3131252B2 JP 3131252 B2 JP3131252 B2 JP 3131252B2 JP 03246655 A JP03246655 A JP 03246655A JP 24665591 A JP24665591 A JP 24665591A JP 3131252 B2 JP3131252 B2 JP 3131252B2
Authority
JP
Japan
Prior art keywords
vacuum
window
glass plate
chamber
vacuum window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03246655A
Other languages
Japanese (ja)
Other versions
JPH0558776A (en
Inventor
俊一 村上
Original Assignee
アネルバ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アネルバ株式会社 filed Critical アネルバ株式会社
Priority to JP03246655A priority Critical patent/JP3131252B2/en
Publication of JPH0558776A publication Critical patent/JPH0558776A/en
Application granted granted Critical
Publication of JP3131252B2 publication Critical patent/JP3131252B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は窓面が水平方向に向けら
れた真空窓を備えた真空室内で基板等の表面を処理する
装置であって、前記処理の際に蒸発材料またはエッチン
グされた物質が飛散する真空装置、さらに詳しくいえ
ば、分子流を利用して基板に薄膜を成膜する分子線エピ
タキシー装置およびマイクロ波と電磁石でプラズマを生
成し、そのプラズマを利用して基板上の薄膜をエッチン
グしたり、逆に薄膜を堆積したりする電子サイクロトロ
ン共鳴(ECR)装置にそれぞれ設けられている真空窓
の前に透明板を配置し必要に応じ装置外部から容易に交
換できるようにした真空装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for treating a surface of a substrate or the like in a vacuum chamber provided with a vacuum window having a window surface oriented in a horizontal direction. Vacuum equipment where substances are scattered, more specifically, molecular beam epitaxy equipment that forms a thin film on a substrate using molecular flow and plasma generated by microwaves and electromagnets, and the thin film on the substrate is used by using the plasma A vacuum plate is provided in front of a vacuum window provided in each of the electron cyclotron resonance (ECR) devices for etching and conversely depositing a thin film so that it can be easily replaced from outside the device as necessary. Related to the device.

【0002】[0002]

【従来の技術】分子線エピタキシー装置およびECR装
置は基板を処理するために真空を利用する真空装置であ
る。図5は従来の分子線エピタキシー装置の一例を示す
概略図である。成長室(真空室)14に分子線セル8
a,8bおよび8cが配置され、その中央部に処理基板
9が図示しない搬送機構で搬送されてくる。成長室14
の側壁には真空窓3が設けられている。成長室14を高
真空状態にし分子線セル8a,8bおよび8cより分子
流(蒸気)を基板に当てることにより基板9に薄膜結晶
を成長させる。成長室14の真空窓は基板搬送動作の際
に、真空中の基板9の位置を成長室の外から覗くため使
用したり、基板の温度を赤外線放射温度計で真空窓を通
して測定するため等の目的で利用される。
2. Description of the Related Art A molecular beam epitaxy apparatus and an ECR apparatus are vacuum apparatuses that use a vacuum to process a substrate. FIG. 5 is a schematic view showing an example of a conventional molecular beam epitaxy apparatus. Molecular beam cell 8 in growth chamber (vacuum chamber) 14
The substrates a, 8b, and 8c are arranged, and the processing substrate 9 is transported to a central portion thereof by a transport mechanism (not shown). Growth room 14
Is provided with a vacuum window 3 on the side wall of the. The growth chamber 14 is set in a high vacuum state, and a molecular flow (vapor) is applied to the substrate from the molecular beam cells 8a, 8b and 8c to grow a thin film crystal on the substrate 9. The vacuum window of the growth chamber 14 is used for viewing the position of the substrate 9 in a vacuum from outside the growth chamber during the substrate transfer operation, and for measuring the temperature of the substrate through the vacuum window with an infrared radiation thermometer. Used for purposes.

【0003】上記分子線エピタキシー装置の成長室では
基板9に薄膜を形成する際、蒸発材料を蒸発させるた
め、その蒸発した材料は四方八方に飛散する。そのた
め、真空窓3または真空窓3の真空側に透明ガラスが取
り付けられている場合にはその透明ガラスは蒸発材料の
蒸発する回数が増加する度に曇りがひどくなって成長室
内を見ることができなくなるという欠点があった。
In the growth chamber of the molecular beam epitaxy apparatus, when a thin film is formed on the substrate 9, the evaporated material is evaporated, and the evaporated material is scattered in all directions. Therefore, when the transparent glass is attached to the vacuum window 3 or the vacuum side of the vacuum window 3, the transparent glass becomes more cloudy and the inside of the growth chamber can be seen each time the number of times of evaporation of the evaporation material increases. There was a disadvantage that it disappeared.

【0004】図6は従来のECR装置の一例を示す概略
図である。ECR室7の周囲に磁界を印加するための電
磁石15が配置され、ECR室7の出口すなわち加工室
10との境界部分にグリッド8が設けられている。グリ
ッド8とは反対側のECR室7の側壁には真空窓3が設
けられ、真空窓3の一端にマイクロ波電源12が結合さ
れたマイクロ波導波管11が接続されている。加工室1
0の中央部には図示しない搬送機構により基板が搬送さ
れてくる。ECR室7内に図示しないガス供給系よりガ
スを導入し、真空窓3から導入したマイクロ波と電磁石
15によってプラズマを生成し、そのプラズマをECR
室7から加工室10に引き出すことにより加工室にある
基板13表面の薄膜をエッチングできる。また、ある薄
膜を基板13表面に堆積できる。エッチングの場合はこ
の例のようにECR室の出口にプラズマ中のイオンを引
き出すためグリッド電極7が設けられている。また、膜
を堆積する場合は、グリッド電極は取り付けではなく、
電磁石15による磁力線の強度の勾配を利用してイオン
を引き出す。いずれの場合もECR室7内で生成された
プラズマ中のガスイオンは運動エネルギーを持ってい
る。特にエッチングの場合はイオンの運動エネルギーは
数百eVもあり、このイオンによって基板を加工する。
FIG. 6 is a schematic diagram showing an example of a conventional ECR device. An electromagnet 15 for applying a magnetic field is arranged around the ECR chamber 7, and a grid 8 is provided at an outlet of the ECR chamber 7, that is, at a boundary portion with the processing chamber 10. A vacuum window 3 is provided on a side wall of the ECR chamber 7 opposite to the grid 8, and a microwave waveguide 11 to which a microwave power supply 12 is coupled is connected to one end of the vacuum window 3. Processing room 1
The substrate is conveyed to the center of 0 by a conveyance mechanism (not shown). A gas is introduced into the ECR chamber 7 from a gas supply system (not shown), and plasma is generated by the microwave introduced from the vacuum window 3 and the electromagnet 15.
The thin film on the surface of the substrate 13 in the processing chamber can be etched by drawing it from the chamber 7 to the processing chamber 10. Further, a certain thin film can be deposited on the surface of the substrate 13. In the case of etching, a grid electrode 7 is provided at the exit of the ECR chamber to extract ions in plasma, as in this example. When depositing a film, the grid electrode is not attached,
The ions are extracted using the gradient of the intensity of the magnetic field lines by the electromagnet 15. In any case, gas ions in the plasma generated in the ECR chamber 7 have kinetic energy. In particular, in the case of etching, the kinetic energy of ions is several hundreds eV, and the substrate is processed by these ions.

【0005】このECR装置はイオンが高い運動エネル
ギーを持っているため目的の基板をエッチングするだけ
でなく、高エネルギーイオンが接触する全ての箇所(E
CR室の壁面およびグリッド電極)をエッチングしてし
まい、エッチングされた金属物質が室内全体に飛散す
る。そのため、上記マイクロ波導入真空窓3はエッチン
グされた金属物質が堆積し、マイクロ波が窓の表面に堆
積した薄膜で反射され、または吸収される。その結果、
ECR室7内に導入されるマイクロ波の量は減少してイ
オンの密度が減少し、エッチング工程では基板のエッチ
ング速度が低下する。最悪の場合には、プラズマが消滅
したり、マイクロ波導入窓が破損したりする、等の欠点
があった。
In this ECR apparatus, ions have high kinetic energy, so that not only the target substrate is etched, but also all parts (E
The wall surface of the CR room and the grid electrode) are etched, and the etched metal material scatters throughout the room. For this reason, the etched metal material is deposited on the microwave introduction vacuum window 3, and the microwave is reflected or absorbed by the thin film deposited on the surface of the window. as a result,
The amount of microwaves introduced into the ECR chamber 7 decreases, the ion density decreases, and the etching rate of the substrate decreases in the etching process. In the worst case, there are drawbacks such as the disappearance of the plasma and the breakage of the microwave introduction window.

【0006】[0006]

【発明が解決しようとする課題】以上のように構成され
た分子線エピタキシー装置およびECR装置は上記真空
窓の曇りを取り除くため、短期間の間に成長室を大気に
曝して真空窓または透明ガラスを交換する必要があっ
た。本発明の目的は上記欠点を解決するもので、真空窓
の内側に1以上の透明ガラスを重ねて設けておき、最も
上に重ねられている透明ガラスが曇った場合、その度に
装置外部から操作してその透明ガラスを真空窓面から退
避させることにより、真空窓の交換の期間を長くした真
空装置を提供することにある。
In the molecular beam epitaxy apparatus and the ECR apparatus configured as described above, the growth chamber is exposed to the atmosphere for a short period of time so as to remove the fogging of the vacuum window. Had to be replaced. An object of the present invention is to solve the above-mentioned drawbacks. One or more transparent glasses are provided on the inside of a vacuum window, and when the transparent glass on the top is clouded, each time the transparent glass becomes cloudy, the outside of the apparatus is required. It is an object of the present invention to provide a vacuum apparatus in which the period of replacement of the vacuum window is extended by operating and retracting the transparent glass from the vacuum window surface.

【0007】[0007]

【課題を解決するための手段】前記目的を達成するため
に本発明による真空装置は窓面が水平方向に向けられた
真空窓を備えた真空室内で基板等の表面を処理する装置
であって、前記処理の際に蒸発材料またはエッチングさ
れた物質が飛散する真空装置において、前記真空窓の真
空室面に、前記真空窓全体を覆う透明ガラスを1枚以上
重ねて配置し、前記透明ガラスの前記真空窓から外れた
下側部分に2個の孔を一定距離隔てて設け、前記2個の
孔にそれぞれ固定棒と可動棒を挿入し前記固定棒の他端
を真空室の壁に取り付け、前記可動棒の他端を真空装置
の外から操作できる可動機構に接続し、前記可動機構を
操作することにより前記可動棒をガラス板の厚み分だけ
移動させ、ガラス板群を1枚ずつ前記真空窓面から退避
できるように構成してある。
In order to achieve the above object, a vacuum apparatus according to the present invention is an apparatus for treating a surface of a substrate or the like in a vacuum chamber provided with a vacuum window whose window surface is oriented in a horizontal direction. In a vacuum apparatus in which an evaporating material or an etched substance is scattered during the processing, at least one transparent glass covering the entirety of the vacuum window is disposed on the vacuum chamber surface of the vacuum window, and the transparent glass is Two holes are provided at a fixed distance in a lower portion deviated from the vacuum window, a fixed rod and a movable rod are inserted into the two holes, and the other end of the fixed rod is attached to a wall of the vacuum chamber, The other end of the movable rod is connected to a movable mechanism that can be operated from outside the vacuum device, and by operating the movable mechanism, the movable rod is moved by the thickness of the glass plate, and the glass plate group is moved one by one by the vacuum. Structured so that it can be evacuated from the window And Aru.

【0008】このような構成によれば、最も上に重ねら
れたガラスに膜が付着しその透視度が不良になったとき
その都度、装置外部から操作をするだけで汚れたガラス
板を真空窓面から外すことができ、長期に渡って真空室
内への透視度を良好に保つことができる。これにより、
真空室を短期間で大気に曝すことなく、処理作業を長期
に渡って行うことができる。
According to such a configuration, whenever a film adheres to the glass superimposed on the uppermost layer and the transparency becomes poor, the dirty glass plate can be removed from the apparatus by simply operating the apparatus from the outside each time. It can be removed from the surface, and the visibility into the vacuum chamber can be kept good for a long time. This allows
The processing operation can be performed for a long time without exposing the vacuum chamber to the atmosphere in a short time.

【0009】[0009]

【実施例】以下、図面を参照して本発明をさらに詳しく
説明する。図1は本発明による真空装置の実施例を示す
概略正面図で、分子線エピタキシー装置の例である。図
中、図5と同じ符号部分は同じ機能部分であるので説明
を省略する。成長室14の真空窓3の内側に、重ね合わ
せたガラス板群1a,1b,1c,1d・・・が取り付
けられている。ガラス板の材質は例えば石英である。蒸
発した材料は分子線セル8a,8bおよび8cの方向か
ら飛来してガラス板群の最も上に重ねられているガラス
板1aに付着する。何度も処理を繰り返すことより、ガ
ラス板1aに付着する膜は厚くなり、装置外部から真空
窓3を通して成長室14の中を見ることができなくな
る。ガラス板群1a,1b,1c,1d・・・を保持し
ている可動棒5に接続された可動機構6を矢印の方向に
引くと、ガラス板一枚の厚さ分だけ可動棒5が動き、ガ
ラス板1aが自重によって回転し真空窓3の面より外れ
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. FIG. 1 is a schematic front view showing an embodiment of a vacuum apparatus according to the present invention, which is an example of a molecular beam epitaxy apparatus. In the figure, the same reference numerals as those in FIG. Inside the vacuum window 3 of the growth chamber 14, the stacked glass plate groups 1a, 1b, 1c, 1d,... The material of the glass plate is, for example, quartz. The vaporized material flies from the direction of the molecular beam cells 8a, 8b and 8c and adheres to the glass plate 1a which is superimposed on the top of the glass plate group. By repeating the process many times, the film attached to the glass plate 1a becomes thicker, and the inside of the growth chamber 14 cannot be seen through the vacuum window 3 from outside the apparatus. When the movable mechanism 6 connected to the movable bar 5 holding the glass plate groups 1a, 1b, 1c, 1d,... Is pulled in the direction of the arrow, the movable bar 5 moves by the thickness of one glass plate. Then, the glass plate 1a rotates by its own weight and comes off the surface of the vacuum window 3.

【0010】図2はガラス板群付近の詳細を示した斜視
図である。ガラス板群1a,1b,1c,1d・・・は
真空窓3より大きい直径の円形であり、真空窓3全体を
覆うことができる。ガラス板群1a,1b,1c,1d
・・・は真空窓3に対面しない外周付近すなわち成長室
14の側壁に対面する位置に一定間隔を持って孔2a,
2bが設けられており、孔2bには一端が成長室14の
側壁に固定された固定棒4が挿入されている。孔2aに
は成長室14の壁に対し直角方向にスライド可能で、そ
の他端が成長室14の外部に突出している可動棒5が挿
入されている。可動棒6の他端には可動機構6が接続さ
れている。可動機構6はガラス板の厚さに相当する量単
位で可動棒5を移動できるような構造となっている。当
初は全てのガラス板が図2のように重ねられた状態にな
っている。そして、1枚目のガラス板1aに膜が付着し
成長室内部を見通すのに困難となった時点で、可動軸6
を矢印方向に操作することになる。
FIG. 2 is a perspective view showing details around the glass plate group. The glass plate groups 1a, 1b, 1c, 1d,... Have a larger diameter than the vacuum window 3 and can cover the entire vacuum window 3. Glass plate group 1a, 1b, 1c, 1d
.. Are spaced apart from each other at regular intervals in the vicinity of the outer periphery not facing the vacuum window 3, that is, at the position facing the side wall of the growth chamber 14.
2b is provided, and a fixing rod 4 having one end fixed to the side wall of the growth chamber 14 is inserted into the hole 2b. A movable rod 5 slidable in a direction perpendicular to the wall of the growth chamber 14 and having the other end protruding outside the growth chamber 14 is inserted into the hole 2a. The movable mechanism 6 is connected to the other end of the movable bar 6. The movable mechanism 6 has such a structure that the movable bar 5 can be moved by an amount corresponding to the thickness of the glass plate. Initially, all the glass plates are in a stacked state as shown in FIG. When the film adheres to the first glass plate 1a and it becomes difficult to see through the inside of the growth chamber, the movable shaft 6
Is operated in the direction of the arrow.

【0011】図3は可動棒操作時の動作を説明するため
のガラス板群付近の側面図である。可動軸6を操作する
と、可動棒5が1枚目のガラス板1aの孔2aから抜か
れ、ガラス板1aは孔2bに挿入されている固定棒4を
軸に重力によって反時計方向に回転する。回転したガラ
ス板1aは想像線(2点鎖線)で示す位置に固定棒4で
保持され、真空窓3の対向する位置から外れる。真空窓
3の面にはガラス板1b,1c,1d・・・のガラス板
群が対面し、成長室14の内部を良好に見通すことがで
きる。ガラス板1b,1c,1d・・・についても膜が
付着すれば、同様にして各ガラス板を真空窓3の面から
外すことができる。ガラス板の枚数は真空内の他の機構
と干渉しなければ、何枚重ねても良い。
FIG. 3 is a side view of the vicinity of the glass plate group for explaining the operation at the time of operating the movable bar. When the movable shaft 6 is operated, the movable rod 5 is pulled out of the hole 2a of the first glass plate 1a, and the glass plate 1a rotates counterclockwise by gravity about the fixed rod 4 inserted into the hole 2b. The rotated glass plate 1a is held by the fixing rod 4 at a position indicated by an imaginary line (two-dot chain line), and comes off the position opposite the vacuum window 3. The glass plate group of glass plates 1b, 1c, 1d... Faces the surface of the vacuum window 3 so that the inside of the growth chamber 14 can be seen well. If the films adhere to the glass plates 1b, 1c, 1d, etc., the respective glass plates can be similarly removed from the surface of the vacuum window 3. Any number of glass plates may be stacked as long as they do not interfere with other mechanisms in the vacuum.

【0012】図4は本発明の他の実施例を示す概略正面
図で、ECR装置の例である。る。図中、図6と同じ符
号を付した部分は同じ機能部分であるので、その説明は
省略する。真空窓3のECR室7側に、図2に示すガラ
ス板1b,1c,1d・・・のガラス板群と同じものが
設けられ、同様な操作が可能である。したがって、ガラ
ス板にエッチングで飛散した物質が付着してエッチング
速度が低下しても、物質が付着したガラス板を真空窓3
の面から外せば、元のエッチング速度で処理することが
できる。
FIG. 4 is a schematic front view showing another embodiment of the present invention, which is an example of an ECR apparatus. You. In the figure, portions denoted by the same reference numerals as in FIG. 6 are the same functional portions, and thus description thereof will be omitted. On the ECR room 7 side of the vacuum window 3, the same glass plate group as the glass plates 1b, 1c, 1d... Shown in FIG. 2 is provided, and the same operation is possible. Therefore, even if the substance scattered by the etching adheres to the glass plate and the etching rate is reduced, the glass plate to which the substance adheres is removed from the vacuum window 3.
If it is removed from the surface, processing can be performed at the original etching rate.

【0013】[0013]

【発明の効果】以上,説明したように本発明は窓面が水
平方向に向けられた真空窓を備えた真空室内で基板等の
表面を処理する装置であって、前記処理の際に蒸発材料
またはエッチングされた物質が飛散する真空装置におい
て、真空窓の真空室面側に1以上のガラス板を重ねて設
け、ガラス板に蒸発材料やエッチングされた金属が付着
した場合にはそのガラス板を装置外部から容易に真空窓
の面から外すことができるので、真空窓に対面するガラ
ス板に膜が付着しても、短期間で真空装置内を大気に曝
すことなく、真空窓の透視度を長期間に渡って良好に保
つことができる。したがって、分子線エピタキシー装置
およびECR装置の基板処理を長期間連続に行うことが
でき、真空窓の交換の期間を長くすることができる。
As described above, the present invention relates to an apparatus for treating a surface of a substrate or the like in a vacuum chamber having a vacuum window whose window surface is oriented in a horizontal direction. Alternatively, in a vacuum device in which an etched substance is scattered, one or more glass plates are provided on the vacuum chamber side of a vacuum window, and when an evaporation material or an etched metal adheres to the glass plate, the glass plate is removed. Since the film can be easily removed from the outside of the vacuum window from the surface of the vacuum window, even if a film adheres to the glass plate facing the vacuum window, the transparency of the vacuum window can be reduced without exposing the inside of the vacuum device to the atmosphere in a short period of time. It can be kept good for a long time. Therefore, the substrate processing of the molecular beam epitaxy apparatus and the ECR apparatus can be performed continuously for a long period of time, and the period for replacing the vacuum window can be lengthened.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明による真空装置の実施例を示す概略正面
図である。
FIG. 1 is a schematic front view showing an embodiment of a vacuum apparatus according to the present invention.

【図2】ガラス板群付近の詳細を示す斜視図である。FIG. 2 is a perspective view showing details in the vicinity of a glass plate group.

【図3】ガラス板群のガラス板の動作を説明するための
側面図である。
FIG. 3 is a side view for explaining the operation of the glass plates in the glass plate group.

【図4】本発明による真空装置の他の実施例を示す概略
図である。
FIG. 4 is a schematic view showing another embodiment of the vacuum apparatus according to the present invention.

【図5】従来の分子線エピキタシー装置の一例を示す概
略正面図である。
FIG. 5 is a schematic front view showing an example of a conventional molecular beam epitaxy apparatus.

【図6】従来のECR装置の一例を示す概略正面図であ
る。
FIG. 6 is a schematic front view showing an example of a conventional ECR device.

【符号の説明】[Explanation of symbols]

1…ガラス板群 2…孔 3…真空窓 4…固定棒 5…可動棒 6…可動機構 7…ECR室 8…グリッド 9…電磁石 10…加工室 11…マイクロ波導波管 12…マイクロ波電源 13…基板 DESCRIPTION OF SYMBOLS 1 ... Glass plate group 2 ... Hole 3 ... Vacuum window 4 ... Fixed bar 5 ... Movable bar 6 ... Movable mechanism 7 ... ECR room 8 ... Grid 9 ... Electromagnet 10 ... Processing room 11 ... Microwave waveguide 12 ... Microwave power supply 13 …substrate

フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C30B 23/00 - 23/08 C30B 25/00 - 25/22 C23C 14/00 - 14/58 C23C 16/00 - 16/56 H01L 21/203 H01L 21/205 H01L 21/302 H01L 21/31 Continuation of the front page (58) Field surveyed (Int. Cl. 7 , DB name) C30B 23/00-23/08 C30B 25/00-25/22 C23C 14/00-14/58 C23C 16/00-16 / 56 H01L 21/203 H01L 21/205 H01L 21/302 H01L 21/31

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 窓面が水平方向に向けられた真空窓を備
えた真空室内で基板等の表面を処理する装置であって、
前記処理の際に蒸発材料またはエッチングされた物質が
飛散する真空装置において、前記真空窓の真空室面に、
前記真空窓全体を覆う透明ガラスを1枚以上重ねて配置
し、前記透明ガラスの前記真空窓から外れた下側部分に
2個の孔を一定距離隔てて設け、前記2個の孔にそれぞ
れ固定棒と可動棒を挿入し前記固定棒の他端を真空室の
壁に取り付け、前記可動棒の他端を真空装置の外から操
作できる可動機構に接続し、前記可動機構を操作するこ
とにより前記可動棒をガラス板の厚み分だけ移動させ、
ガラス板群を1枚ずつ前記真空窓面から退避できるよう
に構成したことを特徴とする真空装置。
An apparatus for treating a surface of a substrate or the like in a vacuum chamber having a vacuum window whose window surface is oriented in a horizontal direction,
In the vacuum device in which the evaporated material or the etched material is scattered during the processing, the vacuum chamber surface of the vacuum window,
At least one transparent glass covering the entirety of the vacuum window is superposed and arranged, and two holes are provided at a fixed distance in a lower portion of the transparent glass deviating from the vacuum window and fixed to the two holes, respectively. By inserting a rod and a movable rod, attaching the other end of the fixed rod to the wall of the vacuum chamber, connecting the other end of the movable rod to a movable mechanism that can be operated from outside the vacuum device, and operating the movable mechanism, Move the movable rod by the thickness of the glass plate,
A vacuum apparatus characterized in that a group of glass plates can be retracted one by one from the vacuum window surface.
【請求項2】 前記透明ガラスは石英ガラスである請求
項1記載の真空装置。
2. The vacuum apparatus according to claim 1, wherein said transparent glass is quartz glass.
JP03246655A 1991-08-30 1991-08-30 Vacuum equipment Expired - Fee Related JP3131252B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03246655A JP3131252B2 (en) 1991-08-30 1991-08-30 Vacuum equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03246655A JP3131252B2 (en) 1991-08-30 1991-08-30 Vacuum equipment

Publications (2)

Publication Number Publication Date
JPH0558776A JPH0558776A (en) 1993-03-09
JP3131252B2 true JP3131252B2 (en) 2001-01-31

Family

ID=17151651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03246655A Expired - Fee Related JP3131252B2 (en) 1991-08-30 1991-08-30 Vacuum equipment

Country Status (1)

Country Link
JP (1) JP3131252B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11606519B2 (en) 2018-06-08 2023-03-14 Sony Semiconductor Solutions Corporation Imaging device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251089A (en) * 1998-02-27 1999-09-17 Shibaura Mechatronics Corp Plasma processing equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11606519B2 (en) 2018-06-08 2023-03-14 Sony Semiconductor Solutions Corporation Imaging device

Also Published As

Publication number Publication date
JPH0558776A (en) 1993-03-09

Similar Documents

Publication Publication Date Title
US4724060A (en) Sputtering apparatus with film forming directivity
EP0082977B1 (en) Integrated circuit photomask
JPH04354865A (en) Surface treatment by ultra-low speed ion beam
JPS63282269A (en) Method for depositing metal coating on body
JP2921874B2 (en) High efficiency sheet plasma sputtering equipment
US6335268B1 (en) Plasma immersion ion processor for fabricating semiconductor integrated circuits
JP2002241925A (en) Organic vapor deposition system, and organic thin film manufacturing method
JP3131252B2 (en) Vacuum equipment
GB1602386A (en) Method of manufacturing semiconductor devices
JP2849458B2 (en) Semiconductor device manufacturing method and manufacturing apparatus
JP2942899B2 (en) Electrode device for plasma CVD equipment
JP2780419B2 (en) Impurity introduction device and its introduction method
JP2004079528A5 (en)
JP2832836B2 (en) Vacuum deposition equipment
JPH10176262A (en) Vapor deposition device
US5178738A (en) Ion-beam sputtering apparatus and method for operating the same
EP0185366B1 (en) Method of forming resist pattern
KR101293129B1 (en) Sputtering apparatus
JPS6176662A (en) Method and device for forming thin film
Gamo et al. Ion beam lithography
JP2000297360A (en) Film forming device
Yamanishi et al. Industrial applications of ICB deposition for the fabrication of electronic devices
JP3067180B2 (en) Method and apparatus for forming single crystal silicon film
WO2024143399A1 (en) Film formation device
JPS63103064A (en) Film forming device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071117

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081117

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081117

Year of fee payment: 8

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081117

Year of fee payment: 8

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091117

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101117

Year of fee payment: 10

LAPS Cancellation because of no payment of annual fees