JP3131938B2 - Heat treatment apparatus and heat treatment method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus and a heat treatment method.

[0002]

2. Description of the Related Art Generally, in a semiconductor device manufacturing process, a circuit pattern is reduced and transferred to a photoresist by using a photolithography technique, which is exposed to light and then developed.

In performing such processing, a processing system is used in which a coating / developing apparatus and an exposure apparatus are connected via an interface unit for loading / unloading a semiconductor wafer as an object to be processed. In this processing system, the semiconductor wafer is subjected to a hydrophobizing treatment in order to improve the adhesion of the resist to the surface in a coating and developing apparatus, cooled to a predetermined temperature, and then heated after being coated with the resist. . Then, the semiconductor wafer is transferred to the interface unit and transferred to the exposure device, and after being subjected to the exposure processing, is again transferred to the coating and developing apparatus and subjected to the development processing.

[0004]

In the above-described conventional processing system, the heat treatment apparatus for performing the cooling process and the heating process controls the temperature of the semiconductor wafer as the object to be processed at a desired temperature. By holding the semiconductor wafer close to the plate or the cold plate, the temperature of the wafer is temporarily brought close to the hot plate temperature or the cold plate temperature. However, this method has a problem that it takes a long time for the temperature of the semiconductor wafer to reach a desired temperature because of heat conduction by radiation and convection.

The present invention has been made under such circumstances, and the object thereof is to enable heat treatment from both the front and back surfaces of an object to be processed, and to reduce the heat treatment time by rapidly raising and lowering the temperature. Accordingly, it is an object of the present invention to provide a heat treatment apparatus and a heat treatment method capable of improving the throughput.

[0006]

SUMMARY OF THE INVENTION The present invention firstly comprises
The body is placed, and the temperature of the object is controlled to a predetermined temperature.
In a heat treatment apparatus that performs thermal treatment,
Cooling means provided on a mounting table for mounting and cooling an object to be processed
And projecting from the upper surface of the cooling means to support the object to be processed.
Support means, provided at a position facing the cooling means,
Cooling acceleration means for rapidly lowering the temperature of the object to be processed.
And the cooling means and the cooling acceleration means are independently warmed.
The object supported by the support means.
Adjusting the distance between the body and the cooling means and cooling acceleration means.
Characterized in that the support means is configured to be able to move forward and backward.
Is provided.

In the present invention, second, the object to be processed is placed,
Thermal processing by controlling the temperature of the object to be processed to a predetermined temperature
In the heat treatment equipment, provided on the mounting table for mounting the object to be processed
Heating means provided on the upper surface of the heating means.
Support means for supporting the body, and a position facing the heating means.
Heating to increase the temperature of the object to be processed at high speed
Accelerating means, the heating means and the heating acceleration
The means are configured to be independently temperature-controllable, and
A supported object, the heating means and the heating acceleration means,
The support means can be advanced and retracted so as to adjust the interval of
There is provided a heat treatment apparatus characterized in that:

In the present invention, third, the object to be processed is placed,
Thermal processing by controlling the temperature of the object to be processed to a predetermined temperature
In the heat treatment equipment, provided on the mounting table for mounting the object to be processed
Temperature raising and lowering means, and a position facing the temperature raising and lowering means.
Temperature that raises and lowers the temperature of the workpiece at high speed
Elevating acceleration means, the temperature elevating means and the temperature
A sealed space is formed between the lifting / lowering acceleration means and the sealed space.
The object to be processed is provided inside, and outside this sealed space.
An annular exhaust passage is formed in the peripheral portion, and the annular exhaust space is formed.
Heat exhausted through an exhaust port provided between
A processing device is provided.

Fourth, in the present invention, the object to be processed is placed,
Thermal processing by controlling the temperature of the object to be processed to a predetermined temperature
In the heat treatment equipment, provided on the mounting table for mounting the object to be processed
Temperature raising and lowering means and projecting from the upper surface of the temperature raising and lowering means
Support means for supporting the object to be processed, and the temperature elevating means
The temperature of the object to be processed is raised at a high speed.
Temperature elevating acceleration means for lowering, the temperature elevating means and
Temperature control means for independently controlling the temperature of the temperature raising / lowering accelerating means
A step, an object supported by the support means, and the temperature rise
To adjust the distance between the lowering means and the temperature raising / lowering accelerating means
A drive mechanism for moving the support means back and forth, and the temperature raising / lowering hand
Forming a closed space between the step and the temperature raising / lowering accelerating means
Means, and an annular exhaust passage provided on an outer peripheral portion of the closed space.
And an exhaust port provided in the annular exhaust passage.
A heat treatment apparatus is provided.

[0010] Fifth, the present invention sets the temperature of the object to be processed to a predetermined value.
In a heat treatment apparatus that performs thermal treatment by controlling the temperature,
A mounting table for mounting the processing object and cooling the processing object
And the mounting table is provided at a position facing the mounting table.
A lid set to a lower temperature than the mounting table,
Moving means for moving an object to be processed between the cover and the cover
A heat treatment apparatus is provided.

In the present invention, sixth, the temperature of the object to be processed is set to a predetermined value.
In a heat treatment apparatus that performs thermal treatment by controlling the temperature,
A mounting table that mounts the processing object and heats the processing object
And the mounting table is provided at a position facing the mounting table.
Lid set to a higher temperature than the mounting table and the
Moving means for moving an object to be processed between the cover and the cover
A heat treatment apparatus is provided.

In the present invention, seventhly , the processing object is placed,
Heat for performing thermal processing by controlling the temperature of the object to be processed to a predetermined temperature
In the processing method, a cooling hand is placed on the mounting table
A step is provided, and the temperature of the object to be processed is set at a position facing the cooling means.
Cooling acceleration means to reduce the temperature at high speed
The distance between the body and these cooling means and cooling acceleration means
Adjusting the temperature decreasing rate of the object to be treated.
A heat treatment method.

Eighth, in the present invention, an object to be processed is placed,
Thermal processing by controlling the temperature of the object to be processed to a predetermined temperature
In the heat treatment method, the mounting table on which the object is placed is heated
Means, and the object to be processed is positioned at a position facing the heating means.
Arrange heating acceleration means to raise the temperature at high speed,
Distance between the body and these heating means and heating acceleration means
Control the temperature rise rate of the object by adjusting
A heat treatment method is provided.

[0014]

[Action] According to the present invention, a mounting table for mounting an object to be processed is provided.
A cooling means is provided, and a processing target is provided at a position facing the cooling means.
Arrange cooling acceleration means to rapidly lower the temperature of the body,
Between the object to be processed and these cooling means and cooling acceleration means
Adjust the distance or place the object
A heating means is provided on the mounting table, and at a position facing the heating means.
Heating acceleration means for raising the temperature of the workpiece at high speed
And the object to be processed, these heating means and heating acceleration means,
Distance can be adjusted so that the
Heat treatment and cool the object
In this case, bring the object close to the cooling acceleration means.
If the workpiece is heated,
Lowering the temperature of the object by bringing the object close to the step
Can be controlled to increase the heating rate or heating rate.
When the temperature approaches the desired temperature,
Keep away from speed means, use cooling means or heating means
Slowly change the temperature by bringing it close to the desired temperature
be able to. Therefore, the temperature of the workpiece is lowered or raised.
The heat treatment time can be shortened.
It becomes possible. Further, according to the third or fourth aspect of the invention,
Between the temperature raising and lowering means and the temperature raising and lowering acceleration means.
To form an annular exhaust passage around the outer periphery of this sealed space.
And through the exhaust port provided in this annular exhaust space
By evacuating, the surface of the object to be processed can be cooled or heated.
Processing can be performed uniformly, and the
The thickness of the coating film and the like can be made uniform.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In performing such processing, a processing system shown in FIG. 1 is used. This processing system includes a loader unit 40 for loading / unloading a semiconductor wafer W (hereinafter, referred to as a wafer) as an object to be processed, a brush cleaning device 42 for brush cleaning the wafer W, and cleaning the wafer W with high-pressure jet water. A jet water cleaning device 44, an adhesion processing device 46 for hydrophobizing the surface of the wafer W, a cooling processing device 48 for cooling the wafer W to a predetermined temperature, and a resist coating device 50 for coating a resist on the surface of the wafer W
In addition, a heat treatment device 52 for heating the wafer W before and after resist coating to perform pre-baking or post-baking, a developing device 54 for developing the wafer W, and the like are integrally assembled to improve work efficiency.

A wafer transfer path 56 is provided along the longitudinal direction at the center of the processing system configured as described above, and each of the devices 40 to 54 is disposed in the wafer transfer path 56 so as to face the front. , The wafer carrier 58 is connected to each of the devices 40 to 54.
The wafer W can be moved on the wafer transfer path 56 to transfer the wafer W.

The wafer W is supplied to the adhesion processing device 46.
In addition to being cooled to a predetermined temperature by the cooling device 48 after being subjected to the hydrophobic treatment, the resist is applied by the resist coating device 50 and then heated by the heating device 52 and then cooled to the predetermined temperature by the cooling device 48 Is done. Further, the wafer W heated by the heating processing device 52 after the resist is applied on the surface by the resist coating device 50 is cooled by the cooling processing device 48 and then transferred from the interface unit (not shown) to the exposure device (not shown). Exposed. Then, the wafer W that has been subjected to the exposure processing is transported again to the coating and developing apparatus via an interface unit (not shown), and is developed by the developing apparatus 54.

FIG. 2 is a schematic explanatory view of the heat treatment apparatus of the present invention, FIG. 3 is a schematic perspective view of the heat treatment apparatus, FIG. 4 is a plan view showing a part of the heat treatment apparatus in cross section, and FIG. A side view is shown. The first embodiment is a case where the heat treatment apparatus of the present invention is applied to the cooling processing unit 48 of the above-mentioned processing system.

As shown in FIG. 2, the cooling processing device 48 includes a mounting table 61 as a cooling means (temperature raising / lowering means) for mounting and cooling the wafer W, and a through hole provided in the mounting table 61. The plurality of (for example, three) support pins 63, which penetrate through the inside 62, and can protrude and retract on the upper surface of the mounting table 61, protrude and support the wafer W at the upper end and can be separated from the mounting table 61, and the wafer W A main part is configured at an upper position facing the mounting table 61 with an upper lid 65 as a cooling acceleration means (temperature elevation acceleration means).

In this case, a cooling water supply passage 67 is provided inside the mounting table 61 and the upper lid 65, and a cooling water supply source 69 is connected to the supply passage 67 via a pipe 68. The support pin 63 is erected on an elevating plate 72 which is connected to an elevating cylinder 71 (drive unit) and moves up and down. The supporting pin 63 moves up and down together with the elevating plate 72 which moves up and down by driving the elevating cylinder 71. It can come and go on the upper surface of 61. The support pin 63 thus configured
Can support the wafer W while protruding above the mounting table 61. The wafer W protrudes above the mounting table 61 when the support pins 63 are lowered and housed in the through holes 62 of the mounting table 61. It is supported on a plurality of, for example, three proximity pins 73. At this time, the distance between the wafer W and the upper surface of the mounting table 61 is about 0.3 mm.

The processing space between the mounting table 61 and the upper lid 65 is a sealed space 75 that is shielded from the outside air. An annular exhaust passage 77 is provided on the outer periphery of the sealed space 75. Then, as shown in FIG.
Are provided with exhaust ports 78 at four locations.
An exhaust duct 80 is connected through a gas exhaust pipe 79 so that the inside of the sealed space 75 can be exhausted by driving a vacuum pump (exhaust device) (not shown) connected to the exhaust duct 80.

In the sealed space 75, for example, nitrogen (N
2) A supply pipe 81 for a purge gas such as a gas is inserted, and an N 2 gas as a purge gas is supplied from the supply pipe 81. As described above, by discharging the N2 gas or air at a constant flow rate, the airflow in the sealed space 75 is made laminar, and the thermal effect on the wafer W can be reduced. In addition, by changing the balance between the amount of N2 gas or air and the amount of exhaust, the conditions under which the thermal effect on the wafer W is minimized can be made, and the discharge and exhaust can be performed under those conditions.

On the other hand, a sensor 83 is attached as a temperature detecting means at at least one position on the inner side surface of the upper lid 65, and the sensor 83 detects the temperature of the surface of the wafer W supported by the support pins 63. It can be detected. As the sensor 83, for example, a radiation thermometer that detects the temperature by measuring the amount of radiation such as infrared light radiated from the surface of the wafer W is used. The sensor 83 does not necessarily need to be mounted on the inner side surface of the upper lid 65, and may be mounted on the mounting table 61 side. For example, it may be arranged below the periphery of the wafer W and the temperature may be measured from the back side of the wafer W.

The measured value detected by the sensor 83 constructed as described above is transmitted as a detection signal to a central processing unit (hereinafter referred to as a CPU) 85 which is a control means, and is compared with data stored in advance by the CPU 85. The control signal subjected to the arithmetic processing is transmitted to the lifting / lowering cylinder 71 of the drive section of the support pin 63 and the transfer mechanism drive section 87 of the wafer transfer body 58.

Next, the operation of the cooling device 48 will be described. First, the wafer W heat-treated at a temperature of about 90 ° C. or higher by the heat treatment device 52 is
After being taken out of the heat treatment device 52 by the cooling device 8, the carrier is conveyed to the cooling treatment device 48 and supported by the support pins 63 protruding above the mounting table 61. After transferring the wafer W to the support pins 63, the wafer carrier 58 retreats from the cooling processing device 48. The wafer W supported by the support pins 63 is exposed to air or an N 2 gas atmosphere supplied from a supply pipe 81 in the sealed space 75.

Then, the wafer W supported by the support pins 63 is extended by the elevating cylinder 71 so that the upper lid 65 serving as a cooling acceleration means (temperature elevating acceleration means).
Close to. At this time, the upper lid 65 is maintained at a temperature preset by the CPU 85, that is, a temperature slightly lower than a desired temperature, for example, 15 ° C., by the cooling water supplied from the cooling water supply source 69 flowing through the supply passage 67. ing.

In this state, the wafer W is rapidly cooled,
The temperature of the wafer W is intermittently or continuously detected by the temperature sensor 83, and when the temperature of the wafer W decreases to, for example, 30 ° C., a control signal indicating that the descent can be started is transmitted from the CPU 85 to the elevating cylinder 71 so that the elevating cylinder 71 The retracting operation is performed, and the elevating plate 7 is moved with the retracting operation of the elevating cylinder 71.
The support pins 63 move down together with the wafer W and are housed in the through holes 62 to place the wafer W on the mounting table 61, that is, on the proximity pins 73.

The wafer W placed on the mounting table 61 is slowly cooled to a desired temperature (specifically, 23 ° C.) by cooling water supplied to a supply passage 67 provided on the mounting table 61. When the wafer W is cooled down to a desired temperature, the elevating cylinder 71 extends and raises the support pins 63 to protrude above the mounting table 61 to support the wafer W. In this state, after the wafer transfer body 58 enters the cooling processing device 48 and receives the wafer W, the wafer W is taken out of the cooling processing device 48 and transferred to the next processing step.

Here, the desired temperature is a temperature required by the exposure apparatus, for example, 23 ° C. With the progress of fine processing as in the present case, while the temperature accuracy of the wafer W during exposure is strictly required, the processing time is also required to be shortened in terms of productivity efficiency. FIG. 7 is a graph showing the relationship between time and temperature by the conventional cooling means (temperature raising / lowering means), and FIG. 8 is time and temperature by the cooling means (temperature raising / lowering means) and the cooling acceleration means (temperature raising / lowering acceleration means) of the present invention. 3 shows a graph showing the relationship of. As is clear from the graph, the cooling acceleration means (temperature elevation acceleration means) arranged for the purpose of rapidly cooling (elevating) the temperature of the wafer W enables the temperature to be rapidly cooled (elevated) to shorten the heat treatment time. Thus, throughput can be improved.

In the second embodiment, the heat treatment apparatus of the present invention is applied to a heat treatment apparatus 52 used in a semiconductor wafer coating and developing apparatus shown in FIG. As shown in FIG. 2, similarly to the first embodiment, the heat treatment device 52 is provided with a mounting table 61 as a heating means (temperature raising / lowering means) for mounting and heating the wafer W, and provided on the mounting table 61. The mounting table 61 is configured to penetrate through the through hole 62 and to be able to protrude and retract on the upper surface of the mounting table 61.
, For example, three support pins 6 configured to be separated from the support pins 6
3 and an upper cover 6 serving as a heating acceleration unit (temperature raising / lowering acceleration unit) at an upper position facing the mounting table 61 with respect to the wafer W.
5 constitutes a main part.

In this case, a heater 91 is provided inside the mounting table 61 and the upper lid 65, and a heater power supply 93 is connected to the heater 91 via a conducting wire 92. The support pin 63 is erected on an elevating plate 72 which is connected to an elevating cylinder 71 (drive unit) and moves up and down. The supporting pin 63 moves up and down together with the elevating plate 72 which moves up and down by driving the elevating cylinder 71. It can come and go on the upper surface of 61. The support pins 63 configured as described above can support the wafer W in a state of protruding above the mounting table 61, and the wafer W is stored in the through hole 62 of the mounting table 61 by the lowering of the support pins 63. In this state, it is supported on a plurality of, for example, three proximity pins 73 protruding above the mounting table 61. At this time, the distance between the wafer W and the upper surface of the mounting table 61 is about 0.3 mm.

The processing space between the mounting table 61 and the upper lid 65 is a sealed space 75 which is shielded from the outside air. An annular exhaust passage 77 is provided on the outer periphery of the sealed space 75. Then, as shown in FIG.
Are provided with exhaust ports 78 at four locations.
An exhaust duct 80 is connected through a gas exhaust pipe 79 so that the inside of the sealed space 75 can be exhausted by driving a vacuum pump (exhaust device) (not shown) connected to the exhaust duct 80.

In the sealed space 75, for example, nitrogen (N
2) A supply pipe 81 for a purge gas such as a gas is inserted, and an N 2 gas as a purge gas is supplied from the supply pipe 81. As described above, by discharging the N2 gas or air at a constant flow rate, the airflow in the sealed space 75 is made laminar, and the thermal effect on the wafer W can be reduced. In addition, by changing the balance between the amount of N2 gas or air and the amount of exhaust, the conditions under which the thermal effect on the wafer W is minimized can be made, and the discharge and exhaust can be performed under those conditions.

On the other hand, a sensor 83 is attached as a temperature detecting means at at least one position on the inner surface of the upper lid 65, and the temperature of the surface of the wafer W supported by the support pins 63 is detected by the sensor 83. It can be detected. As the sensor 83, for example, a radiation thermometer that detects the temperature by measuring the amount of radiation such as infrared light radiated from the surface of the wafer W is used. The sensor 83 does not necessarily need to be mounted on the inner side surface of the upper lid 65, and may be mounted on the mounting table 61 side. For example, it may be arranged below the periphery of the wafer W and the temperature may be measured from the back side of the wafer W.

The measured value detected by the sensor 83 constructed as described above is transmitted as a detection signal to a central processing unit (hereinafter referred to as a CPU) 85 which is a control means, and is compared with data previously stored in the CPU 85. The control signal subjected to the arithmetic processing is transmitted to the lifting / lowering cylinder 71 of the drive section of the support pin 63 and the transfer mechanism drive section 87 of the wafer transfer body 58.

Next, the operation of the heat treatment apparatus of the present invention configured as described above will be described. Here, the heat treatment (prebaking) of the wafer W after the application of the resist will be described.

First, the wafer W after resist application is held by the wafer transfer body 58, and the wafer W is transferred to a fixed position above the mounting table 61 through the opening 52A. After the wafer W is supported and received at its distal end and the wafer carrier 58 is retracted, the opening 52A is closed and the wafer W is placed on the mounting table 61 in the sealed space 75 (processing space). In this state, after the purge gas is supplied from the supply pipe 81 into the sealed space 75 and the inside of the sealed space 75 is replaced with the N2 gas, the purge gas is supplied from the mounting table 61 and the heater 91 of the upper lid 65 which have been previously driven and adjusted to a predetermined processing temperature. The heat treatment rapidly heats the front and back surfaces of the wafer W.

Alternatively, in the case where an operation mode in which strict temperature control is required as in the first embodiment, the support pin 6 is used.
The wafer W supported by 3 approaches the upper lid 65 which is a heating acceleration unit (temperature elevation acceleration unit) by the elevating cylinder 71 performing the extension operation. At this time, the upper lid 65 is maintained at a temperature set in advance by the CPU 85, that is, a temperature slightly higher than a predetermined temperature due to the heat generated by the heater 91. The predetermined temperature can be arbitrarily set and changed.

In this state, the wafer W is rapidly heated,
The temperature of the wafer W is intermittently or continuously detected by a temperature sensor 83, and when the temperature of the wafer W rises to near a predetermined temperature, a control signal indicating that the descent can be started is transmitted from the CPU 85 to the elevating cylinder 71, and the elevating cylinder 71 The contraction operation of the lift cylinder 71 causes the support pins 63 to move down together with the elevating plate 72 to be accommodated in the through holes 62, and the wafer W is mounted on the mounting table 61, that is, on the proximity pins 73. I do.

The wafer W placed on the mounting table 61 is gradually cooled to a predetermined temperature by generating heat from the heater 91 provided on the mounting table 61. When the wafer W is heated to a predetermined temperature, the elevating cylinder 71 extends and raises the support pins 63 to project above the mounting table 61 to support the wafer W. In this state, after the wafer transfer body 58 enters the heat processing apparatus 52 and receives the wafer W, the wafer W is taken out of the heat processing apparatus 52 and transferred to the next processing step.

At the time of the heat treatment, a vacuum pump (not shown) provided in the exhaust duct 80 is operated.
The air subjected to the heat treatment in the inside is uniformly exhausted toward the annular exhaust passage 77, and after flowing into the annular exhaust passage 77,
Air is exhausted from an exhaust port 78 through an exhaust pipe 80 via an exhaust pipe 79. Therefore, since it is exhausted uniformly,
The one-sided phenomenon that the film thickness is partially increased due to the unevenness of the exhaust flow can also be prevented.

In the above embodiment, the case where the temperature raising / lowering means is provided on the mounting table 61 and the temperature raising / lowering acceleration means is provided on the upper lid 65 in the heat treatment apparatus of the present invention has been described. However, the present invention is not limited to this apparatus. Conversely, the temperature raising / lowering means may be provided on the upper lid 65, and the temperature raising / lowering accelerating means may be provided on the mounting table 61. In terms of heat convection, it is desirable to arrange a higher temperature member on the upper side. Further, in the above embodiment, the temperature raising / lowering means and the temperature raising / lowering accelerating means are arranged so as to face up and down.However, the present invention is not limited to this arrangement method. It does not matter even if they do not face each other.

In the above embodiment, the case where the heat treatment apparatus of the present invention is applied to a semiconductor wafer coating and developing apparatus has been described. However, the present invention is not limited to this apparatus and can be applied to heat treatment apparatuses other than the coating and developing apparatus. Further, it is needless to say that the present invention can also be applied to heat treatment of an object other than a semiconductor wafer, such as an LCD glass substrate or a CD.

[0044]

As described above, according to the heat treatment apparatus of the present invention, since it is configured as described above, the following effects can be obtained.

A cooling means is provided on the mounting table on which the object is mounted.
The temperature of the object to be processed is increased at a position facing the cooling means.
Arrange cooling acceleration means to lower the object speed
Adjustable distance between cooling means and cooling acceleration means
Heat treatment from the front and back of the object
As much as possible and bring the object close to the cooling acceleration means
Control to increase the temperature reduction rate of the object to be processed.
Can be Therefore, the time for cooling the object
Can be shortened, shortening heat treatment time
And the throughput can be improved.

Further , the heating table is placed on the mounting table for mounting the object to be processed.
A step is provided, and the temperature of the object to be processed is set at a position facing the heating means.
Arrange heating acceleration means to raise the temperature at high speed,
The distance between the body and these heating means and heating acceleration means
Adjustable, heat treatment from front and back of the object
Object can be brought close to the heating acceleration means.
To increase the rate of temperature rise of the object to be processed.
Can be controlled. Therefore, the temperature of the object
Time can be shortened, heat treatment time can be shortened
Is possible, and the throughput can be improved.
You.

Further, temperature raising / lowering means and temperature raising / lowering accelerating means
A sealed space is formed between the
And an annular exhaust space.
Exhaust through the exhaust port
Or heat treatment can be performed uniformly,
To make the film thickness of the coating film etc. formed on the surface uniform
it can.

Further, the processing object supported by the support means
Temperature detecting means for detecting the temperature of the physical body;
The temperature of the object to be processed reaches a predetermined temperature based on a signal from the step.
A signal is transmitted to the drive unit for moving the support means back and forth.
And a drive control means for reaching the object to be processed.
Heat treatment can be performed automatically under optimal temperature conditions
The circuit pattern on the workpiece and the surface of the workpiece.
Improve throughput without giving images
Can be

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing a processing system to which a heat treatment apparatus of the present invention is applied.

FIG. 2 is a schematic explanatory view showing an embodiment of the heat treatment apparatus of the present invention.

FIG. 3 is a schematic perspective view of a heat treatment apparatus of the present invention.

FIG. 4 is a plan view showing a cross section of a part of the heat treatment apparatus of the present invention.

FIG. 5 is a side view showing a cross section of a part of the heat treatment apparatus of the present invention.

FIG. 6 is an enlarged sectional view showing a sealed space and an annular exhaust passage according to the present invention.

FIG. 7 is a table of time and temperature in a conventional heat treatment apparatus.

FIG. 8 is a table of time and temperature showing the effect of the first embodiment of the heat treatment apparatus of the present invention.

[Explanation of symbols]

 W Semiconductor wafer (object to be processed) 48 Cooling device 52 Heating device 61 Mounting table (Temperature elevating means) 63 Support pin 65 Top lid (Temperature elevating acceleration means) 67 Supply passage 69 Cooling water supply source 71 Elevating cylinder (drive unit) 73 Proximity pin 75 Sealed space 77 Annular exhaust passage 78 Exhaust port 81 Supply pipe 83 Sensor 85 Central processing unit (CPU) 91 Heater 93 Heater power supply

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-6-29203 (JP, A) JP-A-64-59915 (JP, A) JP-A-61-89632 (JP, A) JP-A-3-29 270012 (JP, A) JP-A-2-196416 (JP, A) JP-A-2-3910 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/027 H01L 21 / 22 511

Claims (10)

(57) [Claims] An object to be processed is placed, and a temperature of the object is set.
In a heat treatment device that performs thermal treatment by controlling
And set it on a mounting table for mounting and cooling the object to be heated.
Cooling means, and a support projecting from the upper surface of the cooling means and supporting the object to be processed.
Means , provided at a position facing the cooling means, and
Cooling acceleration means for lowering the temperature at a high speed, wherein the cooling means and the cooling acceleration means are independently temperature-controlled.
An object to be processed, which is configured so as to be supported by the support means,
The distance between the cooling means and the cooling acceleration means is adjusted.
Wherein the support means is configured to be able to advance and retreat.
Heat treatment equipment. 2. An object to be processed is placed, and the temperature of the object is
In a heat treatment device that performs thermal treatment by controlling
hand, Heating means provided on a mounting table for mounting an object to be processed, A support projecting from the upper surface of the heating means and supporting the object to be processed
Means, The temperature of the object to be processed is provided at a position facing the heating means.
Heating acceleration means to raise the degree at high speed, The heating means and the heating acceleration means are independently temperature controlled
An object to be processed, which is configured so as to be supported by the support means,
The distance between the heating means and the heating acceleration means is adjusted.
Wherein the support means is configured to be able to advance and retreat.
Heat treatment equipment. 3. An object to be processed is placed, and the temperature of the object is
In a heat treatment device that performs thermal treatment by controlling
Te, the temperature elevating means provided in the mounting table mounting the object to be processed
And an object to be processed, provided at a position facing the temperature raising / lowering means.
Temperature raising / lowering accelerating means for raising / lowering the temperature at high speed
And sealing between the temperature raising / lowering means and the temperature raising / lowering accelerating means.
A space is formed and the object to be processed is provided in this sealed space.
To form an annular exhaust passage in the outer periphery of this sealed space
And through the exhaust port provided in this annular exhaust space
A heat treatment apparatus characterized by exhausting air. 4. An object to be processed is placed, and the temperature of the object is
In a heat treatment device that performs thermal treatment by controlling
Te, the temperature elevating means provided in the mounting table mounting the object to be processed
And projecting from the upper surface of the temperature raising / lowering means to support the object to be processed.
An object to be processed, provided at a position facing the supporting means and the temperature raising / lowering means;
Temperature raising / lowering accelerating means for raising / lowering the temperature at high speed, independently of the temperature raising / lowering means and the temperature raising / lowering accelerating means
Temperature control means for controlling temperature, the object to be processed supported by the support means, and the temperature elevating means
And the distance between the support and the temperature raising / lowering acceleration means is adjusted.
A drive mechanism for moving the holding means forward and backward, and a hermetic seal between the temperature raising / lowering means and the temperature raising / lowering accelerating means.
Means for forming a space, an annular exhaust passage provided in an outer peripheral portion of the closed space, and an exhaust port provided in the annular exhaust passage.
A heat treatment apparatus characterized by the above-mentioned. 5. A gas guide for introducing a gas into the closed space.
4. The method according to claim 3, further comprising:
The heat treatment apparatus according to claim 4. 6. An object to be processed supported by said support means.
Temperature detecting means for detecting a temperature, The temperature of the object to be processed is determined based on the signal from the temperature detecting means.
When the temperature reaches a predetermined temperature, the drive means for moving the support means back and forth.
Drive control means for transmitting a signal to the moving part.
Any one of claim 1, claim 2, or claim 4
The heat treatment apparatus according to claim 1. 7. A method of controlling the temperature of the object to be processed to a predetermined temperature,
Table for mounting the object to be processed and cooling the object to be processed in the heat treatment apparatus for performing the thermal treatment
And is provided at a position facing the mounting table, and
A lid that is also set to a low temperature, and a transfer that moves the workpiece between the mounting table and the lid.
A heat treatment apparatus comprising: a moving unit. 8. A method of controlling the temperature of the object to be processed to a predetermined temperature,
Table for mounting the object to be processed and heating the object to be processed in the heat treatment apparatus for performing the thermal treatment
And is provided at a position facing the mounting table, and
A lid that is also set to a high temperature, and a transfer for moving the workpiece between the mounting table and the lid.
A heat treatment apparatus comprising: a moving unit. 9. An object to be processed is placed, and the temperature of the object is
In the heat treatment method of performing thermal treatment while controlling the temperature to a predetermined temperature
hand, A cooling means is provided on a mounting table for mounting the object to be processed, and the cooling means is provided.
The temperature of the object to be processed is rapidly lowered to a position facing the means.
Cooling acceleration means, Between the object to be processed and these cooling means and cooling acceleration means
The feature is to control the rate of temperature decrease of the workpiece by adjusting the distance.
Characteristic heat treatment method. 10. An object to be processed is placed, and the temperature of the object to be processed is
The heat treatment method of performing thermal treatment by controlling the temperature to a predetermined temperature
And A heating means is provided on a mounting table on which the object is mounted, and the heating means
The temperature of the object to be processed is raised at a position
Arrange heating acceleration means Between the object to be processed and these heating means and heating acceleration means
The feature is to control the heating rate of the object by adjusting the distance.
Characteristic heat treatment method.