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JP3132053B2 - Solid electrolytic capacitors - Google Patents
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JP3132053B2 - Solid electrolytic capacitors - Google Patents

Solid electrolytic capacitors

Info

Publication number
JP3132053B2
JP3132053B2 JP03169940A JP16994091A JP3132053B2 JP 3132053 B2 JP3132053 B2 JP 3132053B2 JP 03169940 A JP03169940 A JP 03169940A JP 16994091 A JP16994091 A JP 16994091A JP 3132053 B2 JP3132053 B2 JP 3132053B2
Authority
JP
Japan
Prior art keywords
lead frame
layer
solid electrolytic
metal layer
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03169940A
Other languages
Japanese (ja)
Other versions
JPH0521290A (en
Inventor
健司 倉貫
秀郎 中島
一也 川原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP03169940A priority Critical patent/JP3132053B2/en
Publication of JPH0521290A publication Critical patent/JPH0521290A/en
Application granted granted Critical
Publication of JP3132053B2 publication Critical patent/JP3132053B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/022Electrolytes; Absorbents
    • H01G9/025Solid electrolytes
    • H01G9/028Organic semiconducting electrolytes, e.g. TCNQ
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/042Electrodes or formation of dielectric layers thereon characterised by the material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は電子機器に用いられ、特
に表面実装時に優れた特性を示す固体電解コンデンサに
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid electrolytic capacitor for use in electronic equipment, and particularly to a solid electrolytic capacitor exhibiting excellent characteristics when mounted on a surface.

【0002】[0002]

【従来の技術】近年、電子機器の進歩とともに電子部品
のチップ化が進み、電子回路の組立が表面実装により行
われることが主流となってきた。このため、チップ部品
のリード端子の半田付け性が要求されることはもちろ
ん、半田付け時の高温下に長時間耐える耐熱性も要求さ
れるようになってきた。従来、耐熱性に乏しいといわれ
た電解コンデンサの分野でも材料と技術の進歩により、
表面実装のできるチップ部品が主流となりつつある。例
えば、図7(a),(b)に示すように、コンデンサ素
子を陽極端子1および陰極端子2を兼ねるリードフレー
ムとともに樹脂でモールドして樹脂外装3を施した固体
電解コンデンサが知られている。
2. Description of the Related Art In recent years, with the progress of electronic equipment, electronic components have been formed into chips, and it has become mainstream that electronic circuits are assembled by surface mounting. For this reason, not only the solderability of the lead terminals of the chip component is required, but also the heat resistance that can withstand the high temperature during soldering for a long time has been required. Conventionally, in the field of electrolytic capacitors, which are said to have poor heat resistance, due to advances in materials and technology,
Chip components that can be surface mounted are becoming mainstream. For example, as shown in FIGS. 7A and 7B, there is known a solid electrolytic capacitor in which a capacitor element is molded with a resin together with a lead frame serving also as an anode terminal 1 and a cathode terminal 2, and a resin exterior 3 is provided. .

【0003】[0003]

【発明が解決しようとする課題】しかしながら、このよ
うな樹脂外装3を施した固体電解コンデンサにおいて
は、表面実装時の半田付け時に高温にさらされることに
より樹脂外装3の気密性が低下し、これにより、外部か
ら空気中の酸素や水蒸気が内部に侵入するため、内部の
コンデンサ素子にダメージを与え、特性の劣化を引き起
こすことがしばしばあった。この原因としては下記のよ
うな理由が考えられる。
However, in a solid electrolytic capacitor provided with such a resin sheath 3, the hermeticity of the resin sheath 3 is reduced due to exposure to a high temperature during soldering during surface mounting. As a result, oxygen and water vapor in the air enter the inside from the outside, so that the internal capacitor element is often damaged and the characteristics are often deteriorated. The possible reasons are as follows.

【0004】(1)チップ部品の面実装時の半田付け性
を向上させるために、リードフレームの表面全体に半田
合金または錫金属層を設けているため、表面実装時の高
温下ではこれらの低融点金属が溶融し、外装樹脂とリー
ドフレームの表面との間に空隙が生じることによって気
密性が低下する。
(1) A solder alloy or tin metal layer is provided on the entire surface of the lead frame in order to improve the solderability at the time of surface mounting of chip components. The melting point metal is melted, and a gap is formed between the exterior resin and the surface of the lead frame, so that the airtightness is reduced.

【0005】(2)リードフレームに用いられる基材金
属と外装樹脂の熱膨張係数が異なるため、膨張収縮によ
り、外装樹脂とリードフレームとの間に空隙が生じるこ
とによって気密性が低下する。
(2) Since the base metal used for the lead frame and the exterior resin have different coefficients of thermal expansion, a gap is formed between the exterior resin and the lead frame due to expansion and contraction, resulting in reduced airtightness.

【0006】また、本発明者らはこれらの課題を解決す
るためにリードフレームの表面に銅金属層を形成し、か
つその表面を粗面化するという提案を行った。この場
合、リードフレームの表面の銅金属層を粗面化すること
により、上記した2点の課題は完全に解決できたが、以
下に記した理由によると考えられる半田付け性に関する
新たな課題が生じた。
In order to solve these problems, the present inventors have proposed to form a copper metal layer on the surface of a lead frame and to roughen the surface. In this case, the above two problems could be completely solved by roughening the copper metal layer on the surface of the lead frame. However, a new problem concerning solderability, which is considered to be due to the following reasons, was found. occured.

【0007】(1)粗面化された銅金属面の酸化が急速
に進むために半田の濡れ性が悪くなり、これにより、導
出端子となるリードフレームの半田付け性は、半田合金
層または錫金属層を有するものに比べるとかなり低下す
る。
(1) Since the oxidation of the roughened copper metal surface proceeds rapidly, the wettability of the solder deteriorates. As a result, the solderability of the lead frame serving as the lead-out terminal is reduced by the solder alloy layer or tin. This is considerably lower than that having a metal layer.

【0008】(2)外装をトランスファーモールド法に
より行う場合、外装樹脂のバリが粗面化したリードフレ
ーム上に薄バリとして強固に密着して導出端子となるリ
ードフレームの表面を覆うため、半田付け性の著しい低
下をきたす。
(2) When the exterior is formed by the transfer molding method, solder is used to cover the surface of the lead frame which becomes a lead terminal by firmly adhering as thin burrs on the lead frame on which the burrs of the exterior resin are roughened. Causes a marked decline in gender.

【0009】本発明は上記従来の課題を解決するもの
で、表面実装時の熱衝撃に耐えられ、しかも半田付け性
の優れた信頼性の高い固体電解コンデンサを提供するこ
とを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a highly reliable solid electrolytic capacitor that can withstand thermal shock during surface mounting and that has excellent solderability.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するため
に本発明の固体電解コンデンサは、弁金属に形成した
極酸化皮膜を誘電体とし、この誘電体の所定の部分に導
電性高分子層および導電体層を順次形成してコンデンサ
素子を構成するとともに、このコンデンサ素子の弁金属
部と導電体層部に導出端子となるリードフレームを接続
し、さらに前記コンデンサ素子とリードフレームの一部
をモールド樹脂で外装する固体電解コンデンサにおい
て、前記リードフレームのモールド樹脂と接触する部分
以外の表面に銅金属層を下地とする半田合金層または錫
金属層を形成し、かつモールド樹脂と接触するリードフ
レーム部分には銅金属層のみを形成し、かつその銅金属
層の表面を粗面化した構成にしたものである。
In order to achieve the above object, a solid electrolytic capacitor according to the present invention is characterized in that an anode oxide film formed on a valve metal is used as a dielectric, and a predetermined portion of this dielectric is A capacitor element is formed by sequentially forming a conductive polymer layer and a conductor layer, and a lead frame serving as a lead terminal is connected to the valve metal part and the conductor layer part of the capacitor element. In a solid electrolytic capacitor in which a part of a frame is covered with a mold resin, a solder alloy layer or a tin metal layer based on a copper metal layer is formed on a surface of the lead frame other than a portion in contact with the mold resin, and the mold resin Only the copper metal layer is formed on the lead frame portion in contact with the substrate, and the surface of the copper metal layer is roughened.

【0011】[0011]

【作用】上記構成によれば、コンデンサ素子の弁金属部
と導電体層部に接続される導出端子となるリードフレー
ムにおけるモールド樹脂とリードフレームとが接触する
部分以外は、表面に銅金属層を下地とする半田合金層ま
たは錫金属層を有し、またモールド樹脂とリードフレー
ムとが接触する部分は、前記半田合金層または錫金属層
が存在せず銅金属層のみを有し、かつその部分のみの表
面を粗面化しているため、リードフレームをプリント基
板に半田付けにより表面実装する場合、リードフレーム
表面が低融点の半田合金層または錫金属層を有している
ことにより、半田付け性は優れたものが得られるととも
に、外装樹脂との密着性は銅金属層の表面を粗面化して
いることにより、他の構成と比べてはるかに優れてお
り、これにより、表面実装時における膨張収縮の熱衝撃
にも耐えることができ、かつ外装の気密性も優れたもの
が得られるため、信頼性の高い固体電解コンデンサを得
ることができるものである。
According to the above construction, a copper metal layer is formed on the surface of the lead frame, which is a lead terminal connected to the valve metal portion and the conductor layer portion of the capacitor element, except for the portion where the mold resin and the lead frame are in contact. A portion having a solder alloy layer or a tin metal layer as an underlayer, and a portion where the mold resin and the lead frame are in contact with each other has only the copper metal layer without the solder alloy layer or the tin metal layer, and the portion thereof Only the surface of the lead frame is roughened, so when the lead frame is surface-mounted on a printed circuit board by soldering, the lead frame surface has a low melting point solder alloy layer or tin metal layer, which makes soldering easier. Is excellent, and the adhesion to the exterior resin is much better than other configurations due to the roughened surface of the copper metal layer. Also able to withstand thermal shock expansion and contraction at the time of mounting, and because also excellent exterior tightness is obtained, in which it is possible to obtain a highly reliable solid electrolytic capacitor.

【0012】[0012]

【実施例】以下、本発明の各実施例を添付図面に基づい
て説明する。
Embodiments of the present invention will be described below with reference to the accompanying drawings.

【0013】(実施例1)まず、図1に示すように、エ
ッチングにより粗面化された厚さ100μmの弁金属で
あるアルミニウム化成箔を電極体11とし、この電極体
11に図2(b)に示す粘着剤12を塗布した短冊状の
耐熱性の絶縁フィルム13を貼付け、陰極部14と陽極
部15を区分した。そして図2(a),(b)に示すよ
うに陰極部14の化成皮膜16の上に導電物質層17で
ある薄膜状のマンガン酸化物層を形成し、次にアルキル
ナフタレンスルフォン酸塩を支持電解質としたピロール
を含有するエマルジョン中で電解重合を行い、導電物質
層17上にポリピロールの導電性高分子層18を形成し
た。さらに、その上にグラファイト層19および銀ペイ
ント層20からなる導体層を公知の方法で順次形成する
ことにより、図2(a),(b)に示すコンデンサ素子
21を得た。
(Embodiment 1) First, as shown in FIG. 1, an aluminum conversion foil, which is a valve metal having a thickness of 100 μm and roughened by etching, is used as an electrode body 11, and this electrode body 11 is attached to the electrode body 11 as shown in FIG. 2), a strip-shaped heat-resistant insulating film 13 to which an adhesive 12 was applied was attached, and a cathode portion 14 and an anode portion 15 were separated. Then, as shown in FIGS. 2 (a) and 2 (b), a thin-film manganese oxide layer which is a conductive material layer 17 is formed on the chemical conversion film 16 of the cathode portion 14, and then an alkylnaphthalene sulfonate is supported. Electropolymerization was performed in an emulsion containing pyrrole as an electrolyte to form a conductive polymer layer 18 of polypyrrole on the conductive material layer 17. Further, a conductor layer composed of a graphite layer 19 and a silver paint layer 20 was sequentially formed thereon by a known method to obtain a capacitor element 21 shown in FIGS. 2A and 2B.

【0014】次に、厚さ0.1mmの鉄基材をプレスによ
り図3に示すリードフレーム22の形状に打ち抜き、そ
の表面に厚さ3μmの銅メッキよりなる銅金属層を形成
し、その後、厚さ1〜10μmの半田メッキよりなる半
田合金層を形成してリードフレーム22を構成した。そ
の後、図4(a)に示すように、このリードフレーム2
2の表面の所定の部分23(図中のハッチングで示した
樹脂モールド外装の樹脂と接触する部分)以外を厚さ1
mmのブタジエンゴム製のマスク材でマスクし、それ以外
の所定の部分23をアルミナ研磨材を用いて乾式サンド
ブラスト法によって半田合金層が完全に除去されるまで
研磨して銅金属層を露出させ、そしてこの所定の部分2
3のみの表面を粗面化した。
Next, an iron base material having a thickness of 0.1 mm is punched into a shape of a lead frame 22 shown in FIG. 3 by pressing, and a copper metal layer made of copper plating having a thickness of 3 μm is formed on the surface thereof. The lead frame 22 was formed by forming a solder alloy layer having a thickness of 1 to 10 μm by solder plating. Thereafter, as shown in FIG.
2 except for a predetermined portion 23 (a portion in contact with the resin of the resin mold exterior indicated by hatching in the figure) having a thickness of 1
Masked with a mask material made of butadiene rubber of mm, and other predetermined portions 23 are polished until the solder alloy layer is completely removed by dry sandblasting using an alumina abrasive to expose the copper metal layer, And this predetermined part 2
The surface of only 3 was roughened.

【0015】そしてこの部分的に粗面化したリードフレ
ーム22上の陰極部14と対応する位置24に導電性接
着剤を少量塗布してコンデンサ素子21を積層すること
により載置した。この後、コンデンサ素子21の陰極部
14側および陽極部15側はリードフレーム22の一部
を折り曲げてコンデンサ素子21を固定した。さらに陽
極部15側は陽極押さえ部25の上からレーザー溶接を
行って接合することにより、図4(b)のように両電極
をリードフレーム22上に接続した。
Then, a small amount of a conductive adhesive was applied to a position 24 corresponding to the cathode portion 14 on the partially roughened lead frame 22, and the capacitor element 21 was placed by lamination. Thereafter, the capacitor element 21 was fixed by bending a part of the lead frame 22 on the cathode section 14 side and the anode section 15 side of the capacitor element 21. Further, the two electrodes were connected to the lead frame 22 as shown in FIG. 4B by joining the anode part 15 by laser welding from above the anode pressing part 25.

【0016】このようにコンデンサ素子21を設置した
リードフレーム22をトランスファーモールド成形法に
よって図5に示すようにエポキシ樹脂26でモールド成
形した後、成形時の樹脂バリを樹脂ビーズを研磨材とし
てサンドブラスト法により取り除いてからリードフレー
ム22を切り離して固体電解コンデンサを得た。
As shown in FIG. 5, the lead frame 22 on which the capacitor elements 21 are installed is molded with an epoxy resin 26 as shown in FIG. 5, and then resin burrs at the time of molding are formed by sand blasting using resin beads as an abrasive. Then, the lead frame 22 was cut off to obtain a solid electrolytic capacitor.

【0017】こうして得られた固体電解コンデンサの外
装気密性の評価は250±5℃の恒温槽中に5分間放置
した後、室温中に取り出すことを3回繰り返す熱処理を
行ったものを次のようなオートラジオグラフィー外装気
密性試験によりテストした。すなわち、供試コンデンサ
サンプルを放射性同位元素のKr85を含む7MPaに
加圧された不活性ガスの雰囲気中に30分間保持した
後、各コンデンササンプルの保持する放射線量を測定す
ることにより、外装内に取り込まれた外気量を定量し、
そして写真フィルム上で感光させることにより外装の気
密性破壊サンプルを検出した。
The external airtightness of the thus obtained solid electrolytic capacitor was evaluated by performing a heat treatment in which the solid electrolytic capacitor was left in a thermostat at 250 ± 5 ° C. for 5 minutes and then taken out to room temperature three times. Autoradiography exterior tightness test. That is, after holding the test capacitor samples in an atmosphere of an inert gas pressurized to 7 MPa containing the radioactive isotope Kr85 for 30 minutes, the radiation dose held by each capacitor sample is measured, so that the inside of the exterior is measured. Quantify the amount of outside air taken in,
Then, the sample was exposed to light on a photographic film to detect an airtight breakage sample of the exterior.

【0018】この結果を母数に対する不良数として分数
で表わし、(表1)に示した。また、このコンデンサの
リードフレーム22の半田付け性の評価のために次のよ
うな方法で半田濡れ性試験を行った。すなわち、230
℃の溶融半田槽中にフラックスを塗布しない試験リード
フレーム22を毎秒2.0mmの速度で5.0mmまで浸漬
し、その時間における濡れ状態を時間の経過とともに追
跡した。濡れ状態は半田と被半田付け金属の接触角の変
化で表わされるが、接触角をθとして表わすと、180
゜≧θ>90゜の場合、半田槽からの反作用として正の
作用力が働き、そしてθ=90゜の時作用力は0とな
る。また半田が被半田付け金属と濡れてゆく90゜>θ
≧0゜の範囲では負の作用力が働く。この作用力を時間
の関数としてグラフ化し、浸漬開始からθ=90゜とな
るまでの時間を測定することにより濡れ性を評価した。
この試験結果とそのグラフをそれぞれ(表1)と図6
(a)に示す。
The results are expressed as fractions as the number of defects with respect to the parameter, and are shown in Table 1. Further, in order to evaluate the solderability of the lead frame 22 of this capacitor, a solder wettability test was performed by the following method. That is, 230
The test lead frame 22 to which no flux was applied was immersed in a molten solder bath at a temperature of 2.0 mm per second to 5.0 mm at a speed of 2.0 mm per second, and the wetting state at that time was followed over time. The wet state is represented by a change in the contact angle between the solder and the metal to be soldered.
In the case of ゜ ≧ θ> 90 °, a positive acting force acts as a reaction from the solder bath, and the acting force becomes 0 when θ = 90 °. 90 °> θ where the solder gets wet with the metal to be soldered
In the range of ≧ 0 °, a negative acting force acts. This acting force was graphed as a function of time, and the wettability was evaluated by measuring the time from the start of immersion until θ = 90 °.
The test results and their graphs are shown in Table 1 and FIG.
(A).

【0019】(実施例2)実施例1のリードフレーム2
2上のメッキにおいて、半田メッキのかわりに、厚さ1
〜10μmの錫メッキよりなる錫金属層を形成し、そし
て実施例1と同じようにしてコンデンサを作製したもの
について、外装気密性の評価を行った。この結果を同じ
く(表1)に示す。
(Embodiment 2) Lead frame 2 of Embodiment 1
2 In the plating above, instead of solder plating, thickness 1
A tin metal layer made of tin plating having a thickness of 10 to 10 μm was formed, and a capacitor manufactured in the same manner as in Example 1 was evaluated for exterior airtightness. The results are also shown in (Table 1).

【0020】また、このコンデンサのリードフレーム2
2の半田付け性の評価のために半田濡れ性試験を行った
結果とそのグラフをそれぞれ(表1)と図6(b)に示
す。
The lead frame 2 of this capacitor
The results of a solder wettability test for evaluating solderability of No. 2 and a graph thereof are shown in (Table 1) and FIG. 6B, respectively.

【0021】(比較例)厚さ0.1mmのリードフレーム
22を構成する鉄基材の表面に厚さ3μmの銅メッキよ
りなる銅金属層のみを形成し、かつその表面全体に粗面
化処理を行ったリードフレーム22と、実施例1および
2と同様に所定の部分のみを部分的に粗面化処理を行っ
たリードフレームを使用して、実施例1と同じようにし
てコンデンサを作製したものについて、外装気密性評価
と半田濡れ性試験を行った結果とそのグラフをそれぞれ
(表1)と図6(c),(d)に示す。
(Comparative Example) Only a copper metal layer made of copper plating having a thickness of 3 μm was formed on the surface of an iron base material constituting a lead frame 22 having a thickness of 0.1 mm, and the entire surface was roughened. A capacitor was fabricated in the same manner as in Example 1 by using the lead frame 22 that was subjected to the above process and a lead frame in which only a predetermined portion was partially roughened as in Examples 1 and 2. The results of the evaluation of the exterior airtightness and the solder wettability test for the product and the graphs thereof are shown in (Table 1) and FIGS. 6 (c) and 6 (d), respectively.

【0022】[0022]

【表1】 [Table 1]

【0023】(表1)から明らかなように、いずれの方
法でも外装気密性は良好な結果が得られるが、半田付け
性では実施例1および実施例2のコンデンサは半田濡れ
性試験の結果が非常に良好で、全条件が0.5秒以内に
濡れるのに対して、比較例の場合は、半田濡れ性が低下
しているのが分かる。特に、リードフレーム22の全体
を粗面化したものはその濡れ性が著しく低下し、リード
フレームがほとんど濡れなくなる場合がある。
As can be seen from Table 1, good results are obtained in the outer airtightness by any of the methods. However, in the solderability, the results of the solder wettability test of the capacitors of Example 1 and Example 2 were obtained. It is very good, and all the conditions are wetted within 0.5 seconds, while in the case of the comparative example, it can be seen that the solder wettability is reduced. In particular, when the entire lead frame 22 is roughened, the wettability thereof is significantly reduced, and the lead frame may hardly be wet.

【0024】比較例で半田の濡れ性が低下して半田不濡
れ部ができたリードフレーム22の表面を表面分析した
結果、数千オングストローム銅の酸化物層の存在が確認
された。また電子顕微鏡での観察ではリードフレーム2
2の全体を粗面化したものでは、粗面化された表面にモ
ールド成形時の樹脂バリが残存していることが確認さ
れ、これらの酸化物や樹脂バリが半田濡れ性を低下させ
たものと考えられる。
As a result of surface analysis of the surface of the lead frame 22 in which the solder wettability was reduced and a solder non-wetting portion was formed in the comparative example, the presence of an oxide layer of several thousand angstroms of copper was confirmed. In observation with an electron microscope, lead frame 2
In the case where the entire surface of No. 2 was roughened, it was confirmed that resin burrs at the time of molding remained on the roughened surface, and these oxides and resin burrs reduced solder wettability. it is conceivable that.

【0025】実施例1および実施例2では上記のような
酸化物層や樹脂バリの存在は認められなかったことか
ら、半田合金層や錫金属層は樹脂との密着性が銅金属層
に比較して劣るため、サンドブラスト法による樹脂バリ
取りで十分にバリを除去できたものと考えられる。
In Examples 1 and 2, the presence of the above-mentioned oxide layer and resin burrs was not recognized, so that the solder alloy layer and the tin metal layer had better adhesion to the resin than the copper metal layer. It is considered that the burrs could be sufficiently removed by deburring the resin by the sand blast method.

【0026】[0026]

【発明の効果】以上のように本発明の固体電解コンデン
サによれば、コンデンサ素子の弁金属部と導電体層部に
接続される導出端子となるリードフレームにおけるモー
ルド樹脂とリードフレームとが接触する部分以外は、表
面に銅金属層を下地とする半田合金層または錫金属層を
有し、またモールド樹脂とリードフレームとが接触する
部分は、前記半田合金層または錫金属層が存在せず銅金
属層のみを有し、かつその部分のみの表面を粗面化して
いるため、リードフレームをプリント基板に半田付けに
より表面実装する場合、リードフレーム表面が低融点の
半田合金層または錫金属層を有していることにより、半
田付け性は優れたものが得られるとともに、外装樹脂と
の密着性は銅金属層の表面を粗面化していることによ
り、他の構成と比べてはるかに優れており、これによ
り、表面実装時における膨張収縮の熱衝撃にも耐えるこ
とができ、かつ外装の気密性も優れたものが得られるた
め、信頼性の高い固体電解コンデンサを得ることができ
るものである。
As described above, according to the solid electrolytic capacitor of the present invention, the mold resin and the lead frame in the lead frame serving as the lead terminal connected to the valve metal portion and the conductor layer portion of the capacitor element come into contact with each other. Except for the portion, the surface has a solder alloy layer or a tin metal layer with a copper metal layer as a base, and the portion where the mold resin and the lead frame are in contact does not have the solder alloy layer or the tin metal layer, Since it has only a metal layer and the surface of only that part is roughened, when the lead frame is surface-mounted on a printed circuit board by soldering, the surface of the lead frame must have a low melting point solder alloy layer or tin metal layer. By having this, excellent solderability can be obtained, and the adhesion to the exterior resin is compared to other configurations by roughening the surface of the copper metal layer. It is much more excellent and can withstand the thermal shock of expansion and shrinkage during surface mounting and also has excellent airtightness of the exterior, so it is possible to obtain a reliable solid electrolytic capacitor You can do it.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例1に使用したアルミニウム化成
箔を基材とする電極体の概要図
FIG. 1 is a schematic diagram of an electrode body using an aluminum conversion foil as a base material used in Example 1 of the present invention.

【図2】(a)実施例1のコンデンサ素子の平面図 (b)(a)におけるB−B´線断面図FIG. 2 (a) is a plan view of the capacitor element of Example 1; FIG. 2 (b) is a sectional view taken along line BB ′ in FIG.

【図3】実施例1で使用したリードフレームの形状を示
す横断面図
FIG. 3 is a cross-sectional view showing the shape of the lead frame used in Example 1.

【図4】(a)図3のリードフレームの概要を示す部分
拡大図 (b)(a)のリードフレームにコンデンサ素子を搭載
した状態を示す部分拡大図
4A is a partially enlarged view showing an outline of the lead frame shown in FIG. 3; FIG. 4B is a partially enlarged view showing a state where a capacitor element is mounted on the lead frame shown in FIG. 3A;

【図5】実施例1でコンデンサ素子をリードフレームと
ともに樹脂成形した形状を示す概要図
FIG. 5 is a schematic view showing a shape in which a capacitor element is resin-molded together with a lead frame in Example 1.

【図6】(a)本発明の実施例1の半田濡れ性を示すグ
ラフ (b)本発明の実施例2の半田濡れ性を示すグラフ (c)比較例でリードフレームを全面粗面化した場合の
半田濡れ性を示すグラフ (d)比較例でリードフレームを部分的に粗面化した場
合の半田濡れ性を示すグラフ
6A is a graph showing the solder wettability of Example 1 of the present invention. FIG. 6B is a graph showing the solder wettability of Example 2 of the present invention. (D) A graph showing the solder wettability when the lead frame is partially roughened in the comparative example.

【図7】(a)従来の固体電解コンデンサを示す上面図 (b)同固体電解コンデンサの側面図FIG. 7A is a top view showing a conventional solid electrolytic capacitor. FIG. 7B is a side view of the solid electrolytic capacitor.

【符号の説明】[Explanation of symbols]

11 電極体 16 化成皮膜 17 導電物質層 18 導電性高分子層 19 グラファイト層 20 銀ペイント層 21 コンデンサ素子 22 リードフレーム DESCRIPTION OF SYMBOLS 11 Electrode body 16 Chemical conversion film 17 Conductive material layer 18 Conductive polymer layer 19 Graphite layer 20 Silver paint layer 21 Capacitor element 22 Lead frame

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平2−267917(JP,A) 特開 昭64−37006(JP,A) 実開 平2−132927(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01G 9/15 H01G 9/004 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-2-267917 (JP, A) JP-A 64-37006 (JP, A) JP-A-2-132927 (JP, U) (58) Survey Field (Int.Cl. 7 , DB name) H01G 9/15 H01G 9/004

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】弁金属に形成した陽極酸化皮膜を誘電体と
し、この誘電体の所定の部分に導電性高分子層および
電体層を順次形成してコンデンサ素子を構成するととも
に、このコンデンサ素子の弁金属部と導電体層部に導出
端子となるリードフレームを接続し、さらに前記コンデ
ンサ素子とリードフレームの一部をモールド樹脂で外装
する固体電解コンデンサにおいて、前記リードフレーム
のモールド樹脂と接触する部分以外の表面に銅金属層を
下地とする半田合金層または錫金属層を形成し、かつモ
ールド樹脂と接触するリードフレーム部分には銅金属層
のみを形成し、かつその銅金属層の表面を粗面化したこ
とを特徴とする固体電解コンデンサ。
An anodic oxide film formed on a valve metal is used as a dielectric, and a predetermined portion of the dielectric is provided with a conductive polymer layer and a conductive polymer layer.
A capacitor element is formed by sequentially forming a conductor layer, a lead frame serving as a lead terminal is connected to the valve metal part and the conductor layer part of the capacitor element, and a part of the capacitor element and a part of the lead frame are molded. In a solid electrolytic capacitor packaged with resin, a solder alloy layer or a tin metal layer based on a copper metal layer is formed on the surface of the lead frame other than the portion in contact with the mold resin, and the lead frame portion is in contact with the mold resin. A solid electrolytic capacitor characterized by forming only a copper metal layer and roughening the surface of the copper metal layer.
【請求項2】弁金属の形状が板または箔である請求項12. The valve metal according to claim 1, wherein the shape of the valve metal is a plate or a foil.
記載の固体電解コンデンサ。The solid electrolytic capacitor as described.
【請求項3】リードフレームの表面の粗面化をサンドブ
ラスト法により行った請求項1記載の固体電解コンデン
サ。
3. The solid electrolytic capacitor according to claim 1, wherein the surface of the lead frame is roughened by a sand blast method.
JP03169940A 1991-07-10 1991-07-10 Solid electrolytic capacitors Expired - Fee Related JP3132053B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03169940A JP3132053B2 (en) 1991-07-10 1991-07-10 Solid electrolytic capacitors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03169940A JP3132053B2 (en) 1991-07-10 1991-07-10 Solid electrolytic capacitors

Publications (2)

Publication Number Publication Date
JPH0521290A JPH0521290A (en) 1993-01-29
JP3132053B2 true JP3132053B2 (en) 2001-02-05

Family

ID=15895724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03169940A Expired - Fee Related JP3132053B2 (en) 1991-07-10 1991-07-10 Solid electrolytic capacitors

Country Status (1)

Country Link
JP (1) JP3132053B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4949200A (en) * 1999-05-28 2000-12-18 Showa Denko Kabushiki Kaisha Solid electrolytic capacitor and method of manufacture thereof
TWI269334B (en) 2002-11-27 2006-12-21 Fuji Electric Co Ltd Electromagnetic contactor
WO2006118156A1 (en) * 2005-04-27 2006-11-09 Showa Denko K.K. Solid electrolytic capacitor and its
JP4735251B2 (en) * 2005-12-28 2011-07-27 株式会社村田製作所 Solid electrolytic capacitor and manufacturing method thereof
JP2007005689A (en) * 2005-06-27 2007-01-11 Nichicon Corp Solid electrolytic capacitor with fuse
JP5729126B2 (en) * 2011-05-18 2015-06-03 株式会社デンソー Manufacturing method of semiconductor device
TWI559349B (en) * 2014-10-28 2016-11-21 鈺邦科技股份有限公司 Method for manufacturing solid electrolytic capacitor package structure with improved conductive terminals
WO2022114047A1 (en) * 2020-11-30 2022-06-02 パナソニックIpマネジメント株式会社 Solid electrolytic capacitor

Also Published As

Publication number Publication date
JPH0521290A (en) 1993-01-29

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