JP3132086B2 - Optical element shape control method and exposure apparatus - Google Patents
Optical element shape control method and exposure apparatusInfo
- Publication number
- JP3132086B2 JP3132086B2 JP03255800A JP25580091A JP3132086B2 JP 3132086 B2 JP3132086 B2 JP 3132086B2 JP 03255800 A JP03255800 A JP 03255800A JP 25580091 A JP25580091 A JP 25580091A JP 3132086 B2 JP3132086 B2 JP 3132086B2
- Authority
- JP
- Japan
- Prior art keywords
- optical element
- heating
- temperature distribution
- reflective mask
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Lasers (AREA)
- Particle Accelerators (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は光学素子の形状制御方法
および露光装置に関し、特に理化学研究、分析装置、製
造装置等に広く利用されるシンクロトロン放射光または
高強度のレーザー光を対象とした光学素子の部分的な温
度変化より生ずる形状変化を防止した、特に半導体素子
製造用のリソグラフィーに好適なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for controlling the shape of an optical element and an exposure apparatus, and more particularly to a synchrotron radiation beam or a high-intensity laser beam widely used in physics and chemistry research, analysis equipment, manufacturing equipment and the like. It is suitable for lithography for manufacturing semiconductor elements, in which a shape change caused by a partial temperature change of an optical element is prevented.
【0002】[0002]
【従来の技術】近年シンクロトロン放射(SR)光やエ
キシマレーザー等の高強度の光束を放射する光源が開発
され、これを用いた理化学研究、分析装置、製造技術等
の光学装置が注目され、それらの研究開発が盛んになっ
てきている。2. Description of the Related Art In recent years, light sources that emit high-intensity light beams, such as synchrotron radiation (SR) light and excimer lasers, have been developed. The research and development of those are becoming active.
【0003】一般に光学装置では、反射、透過、集光、
発散、回折、分光、偏光、結像等の、目的の為に種々の
光学素子を必要とする。このうち特に高強度の光源を用
いた光学装置では使用される光線強度が高いため、多大
な熱負荷による光学素子の変形、性能劣化、照射損傷、
破壊等が問題となってくる。In general, in an optical device, reflection, transmission, light collection,
Various optical elements are required for purposes such as divergence, diffraction, spectroscopy, polarization, and imaging. Of these, the optical device using a high-intensity light source uses a high light intensity, so that a large heat load causes deformation of the optical element, performance degradation, irradiation damage,
Destruction becomes a problem.
【0004】例えばSR光技術の分野では近年マルチポ
ールウィグラーやアンジュレータといった所謂挿入型光
源の技術の進歩により光源からの放射パワーはキロワッ
トのオーダーに達している。For example, in the field of SR optical technology, the radiation power from the light source has reached the order of kilowatts in recent years due to the progress of so-called insertion type light sources such as multipole wiggler and undulator.
【0005】更に光源からの放射波長としてはX線から
真空紫外線領域の電磁波の場合が多く、大気中での減衰
を防ぐため、多くの場合真空槽や真空ビームライン中で
光学要素が組まれている。このため真空中に置かれた光
学素子では大気への伝導、対流による熱放散が起こら
ず、光学素子の温度が大気中に置かれた場合に比べ、大
幅に上昇する傾向があった。Further, the radiation wavelength from the light source is often an electromagnetic wave in the range from X-rays to vacuum ultraviolet rays. In order to prevent attenuation in the atmosphere, optical elements are often assembled in a vacuum chamber or vacuum beam line. I have. For this reason, the optical element placed in a vacuum does not conduct to the atmosphere or dissipate heat due to convection, and the temperature of the optical element tends to increase significantly as compared with the case where the optical element is placed in the atmosphere.
【0006】このような大きな熱負荷を受けると光学素
子は熱歪みのために変形し光学性能が著しく低下したり
極端な場合には光学素子自体の破壊も起こってくる(塚
本他、1990年秋委応用物理学会講演会予稿集P2−
501)。[0006] Under such a large thermal load, the optical element is deformed due to thermal strain and the optical performance is remarkably deteriorated. In an extreme case, the optical element itself is destroyed (Tsukamoto et al., Autumn Committee of 1990). Proceedings of the Japan Society of Applied Physics P2-
501).
【0007】光学素子の温度上昇による性能劣化を防ぐ
ため、光学素子の冷却法が種々工夫されてきており種々
と実施されている。これにより冷却法を実施しない場合
に比べ光学素子の温度上昇が大幅に抑制されるようにな
ってきている(例えばT.Oversluizen e
t al.,Rev.Sci.Instrum.601
493(1989))。[0007] In order to prevent performance degradation due to temperature rise of the optical element, various methods of cooling the optical element have been devised and variously implemented. As a result, a rise in the temperature of the optical element is significantly suppressed as compared with the case where the cooling method is not performed (for example, T. Oversluizene).
t al. Rev., Rev .. Sci. Instrum. 601
493 (1989)).
【0008】[0008]
【発明が解決しようとする課題】しかしながら高強度の
光束を放射する光源を利用した光学装置においては光学
素子の冷却を行っても、一般には光学素子の表面には通
常数〜数10度の温度むらが残ってくる。この結果、光
学素子の形状が変形し、光学装置の光学性能が低下して
くる場合があった。However, in an optical device using a light source that emits a high-intensity light beam, the surface of the optical element generally has a temperature of several to several tens of degrees even when the optical element is cooled. Irregularities remain. As a result, the shape of the optical element may be deformed, and the optical performance of the optical device may be reduced.
【0009】例えば前述したSR光を用いた分光装置で
は本来完全な平面であるべき分光結晶の表面が、素子の
冷却後も部分的に曲率半径が100m以下程度の凸面又
は凹面に変形し、この結果光源の強度に比例した分光光
の強度が得られないという問題点があった。For example, in the above-mentioned spectroscopic device using SR light, the surface of the spectroscopic crystal, which should be originally a perfect plane, is partially deformed into a convex or concave surface having a radius of curvature of about 100 m or less even after the element is cooled. As a result, there was a problem that the intensity of the spectral light in proportion to the intensity of the light source could not be obtained.
【0010】また例えば特開昭63−18626号公報
に示されるような半導体素子の製造用の微細パターン転
写用の投影露光装置においてはミラー等の光学素子の温
度むらを1/100℃程度に制御することが要求され
る。しかしながら光学素子の冷却のみではこれに十分対
応することができないという問題点があった。In a projection exposure apparatus for transferring a fine pattern for manufacturing a semiconductor device as disclosed in, for example, JP-A-63-18626, the temperature unevenness of an optical element such as a mirror is controlled to about 1/100 ° C. Is required. However, there is a problem that the cooling of the optical element alone cannot sufficiently cope with this.
【0011】本発明は高強度の光束を放射する光源を用
いたときの光学素子の温度むらを効果的に補正し、光学
素子の熱歪みによる変形を防止し、光学性能の低下を容
易に防止することができる半導体素子製造用のリソグラ
フィーに好適な光学素子の形状制御方法および露光装置
の提供を目的とする。The present invention effectively corrects temperature unevenness of an optical element when a light source emitting a high-intensity light beam is used, prevents deformation of the optical element due to thermal distortion, and easily prevents deterioration of optical performance. It is an object of the present invention to provide a method for controlling the shape of an optical element and an exposure apparatus suitable for lithography for manufacturing a semiconductor element.
【0012】[0012]
【課題を解決するための手段】請求項1の発明の光学素
子の形状制御方法は、光学素子の温度分布情報を測定
し、該測定に基づいて加熱手段により該光学素子を加熱
して該光学素子の温度むらを補正し、光学素子の熱歪み
による変形を抑制することを特徴としている。請求項2
の発明は請求項1の発明において、前記光学素子の表面
と裏面の少なくとも一方から該光学素子を加熱して温度
調整することを特徴としている。請求項3の発明は請求
項1の発明において、赤外線照射と電熱線の少なくとも
一方を用いて加熱を行なうことを特徴としている。請求
項4の発明は請求項1の発明において、前記温度分布情
報の測定は赤外線検出によって行なうことを特徴として
いる。請求項5の発明は請求項1の発明において、前記
光学素子はパターンを有する反射型マスクであることを
特徴としている。According to a first aspect of the present invention, there is provided a method for controlling the shape of an optical element, comprising measuring temperature distribution information of the optical element, and heating the optical element by heating means based on the measurement. It is characterized in that the temperature unevenness of the element is corrected and deformation of the optical element due to thermal distortion is suppressed. Claim 2
The invention of claim 1 is characterized in that, in the invention of claim 1, the temperature of the optical element is adjusted by heating the optical element from at least one of the front surface and the back surface. According to a third aspect of the present invention, in the first aspect, the heating is performed using at least one of infrared irradiation and heating wire. According to a fourth aspect of the present invention, in the first aspect, the measurement of the temperature distribution information is performed by infrared detection. According to a fifth aspect of the present invention, in the first aspect, the optical element is a reflective mask having a pattern.
【0013】請求項6の発明の露光装置は、照明した反
射型マスクのパターンを縮小光学系を介してウエハに投
影露光する露光装置であって、該反射型マスクの温度分
布情報を測定する測定手段と、該測定手段の測定に基づ
いて加熱手段により該反射型マスクを加熱して該反射型
マスクの温度むらを補正し、反射型マスクの熱歪みによ
る変形を抑制する手段とを有することを特徴としてい
る。請求項7の発明は請求項6の発明において、前記反
射型マスクは、多層膜によるX線反射部を有するX線マ
スクであることを特徴としている。According to a sixth aspect of the present invention, there is provided an exposure apparatus for projecting and illuminating a pattern of an illuminated reflective mask onto a wafer through a reduction optical system, and measuring temperature distribution information of the reflective mask. Means, and means for heating the reflective mask by heating means based on the measurement of the measuring means to correct the temperature unevenness of the reflective mask, and for suppressing deformation of the reflective mask due to thermal distortion. Features. According to a seventh aspect of the present invention, in the sixth aspect, the reflection type mask is an X-ray mask having an X-ray reflection portion of a multilayer film.
【0014】請求項8の発明は請求項1の発明におい
て、前記光学素子を支持するホルダーを有し、該ホルダ
ーは冷却機能を兼ねていることを特徴としている。According to an eighth aspect of the present invention, in the first aspect of the present invention, a holder for supporting the optical element is provided, and the holder also has a cooling function.
【0015】請求項9の発明は請求項6の発明におい
て、前記反射型マスクを支持するホルダーを有し、該ホ
ルダーは冷却機能を兼ねていることを特徴としている。A ninth aspect of the present invention is characterized in that, in the sixth aspect of the present invention, a holder for supporting the reflection type mask is provided, and the holder also has a cooling function.
【0016】[0016]
【実施例】図1は本発明をシンクロトロン放射光を対象
とした光学素子として集光鏡を用いた光学装置に適用し
たときの実施例1の一部分の要部概略図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of a main part of a first embodiment when the present invention is applied to an optical device using a condenser mirror as an optical element for synchrotron radiation.
【0017】同図において1はシンクロトロン放射光で
ある。2は光学素子であり、集光鏡より成り、例えば炭
化ケイ素、SiC材料の表面をトロイダル形状に研磨
し、軟X線反射用の多層膜を表面に形成してありシンク
ロトロン放射光1を反射し点状に集光する光学作用を有
している。In FIG. 1, reference numeral 1 denotes synchrotron radiation. Reference numeral 2 denotes an optical element, which comprises a condensing mirror. For example, the surface of a silicon carbide or SiC material is polished in a toroidal shape, and a multilayer film for soft X-ray reflection is formed on the surface to reflect the synchrotron radiation 1. It has an optical function of condensing light in a dot shape.
【0018】3はホルダーであり、集光鏡を支持してお
り水冷機構(不図示)により集光鏡2を側面および裏面
から冷却する冷却機能を兼ねている。4は温度分布測定
手段であり、例えばInSbをセンサーとした赤外線カ
メラより成っている。Reference numeral 3 denotes a holder, which supports the condenser mirror and also has a cooling function of cooling the condenser mirror 2 from the side and the back by a water cooling mechanism (not shown). Reference numeral 4 denotes a temperature distribution measuring means, which is composed of, for example, an infrared camera using InSb as a sensor.
【0019】5は加熱手段であり、赤外線ランプ5aと
集光板(凹面鏡)5bを有している。加熱手段5は光学
素子2の表面側より光学素子の温度分布を制御してい
る。集光板5bは赤外線ランプ5aより放射した赤外線
の指向性を高めている。Reference numeral 5 denotes a heating means, which has an infrared lamp 5a and a light collector (concave mirror) 5b. The heating means 5 controls the temperature distribution of the optical element from the surface side of the optical element 2. The light collector 5b enhances the directivity of infrared light emitted from the infrared lamp 5a.
【0020】7は他方の加熱手段であり、抵抗線を網状
に配置した発熱部7aと発熱部7aを駆動制御する駆動
部7bとを有しており光学素子2の裏面側より光学素子
の温度分布を制御している。Reference numeral 7 denotes the other heating means, which has a heating section 7a in which resistance wires are arranged in a net shape and a driving section 7b for driving and controlling the heating section 7a. Controlling distribution.
【0021】8は他方の温度分布測定手段としての熱電
対であり、光学素子2の裏面側の温度分布を測定してい
る。9は制御手段であり、2つの温度分布測定手段5,
8からの信号に基づいて光学素子2の温度分布が均一と
なり、光学素子に形状変化がなくなり安定するように2
つの加熱手段5,7を駆動制御している。Reference numeral 8 denotes a thermocouple as another temperature distribution measuring means, which measures the temperature distribution on the back surface side of the optical element 2. 9 is a control means, and two temperature distribution measuring means 5,
8 so that the temperature distribution of the optical element 2 becomes uniform based on the signal from
The two heating means 5 and 7 are drive-controlled.
【0022】本実施例において放射光1の集光鏡2の入
射位置での放射光1に垂直な断面のビーム形状は約80
mm×8mmであり集光鏡2に対して10度の視斜角
(入射角80度)で入射している。入射光のパワー(光
強度)は断熱された銅ブロックに一定時間照射した時の
ブロックの温度上昇を参照して求めると約120wであ
った。放射光1は集光鏡2に斜めに入射しており、この
結果集光鏡2面上での照射面積は大きくなり、本実施例
では熱負荷密度は約33mW/mm2となっている。In this embodiment, the beam shape of the cross section perpendicular to the radiation light 1 at the position where the radiation light 1 is incident on the condenser mirror 2 is about 80.
mm × 8 mm, and is incident on the condenser mirror 2 at a viewing angle of 10 degrees (incident angle of 80 degrees). The power (light intensity) of the incident light was about 120 w when it was determined with reference to the temperature rise of the insulated copper block when the block was irradiated for a certain time. The radiated light 1 is obliquely incident on the condenser mirror 2, and as a result, the irradiation area on the surface of the condenser mirror 2 becomes large, and in this embodiment, the heat load density is about 33 mW / mm 2 .
【0023】集光鏡2の大きさは放射光1の入射方向に
200mm,それに垂直方向に100mmである。集光
鏡2の表面を赤外線カメラ4で温度分布を測定したとき
集光鏡2の長手方向には図2の曲線aで示す温度分布が
あり、これに垂直方向にはほぼ均一な温度分布であっ
た。The size of the condenser mirror 2 is 200 mm in the incident direction of the radiated light 1 and 100 mm in the direction perpendicular thereto. When the temperature distribution of the surface of the condenser mirror 2 is measured by the infrared camera 4, there is a temperature distribution indicated by a curve a in FIG. 2 in the longitudinal direction of the condenser mirror 2, and a substantially uniform temperature distribution in the vertical direction. there were.
【0024】この時、集光鏡2からの反射光1が集束す
る焦点位置でのスポットの大きさを写真フィルムの感光
法により評価すると直径約7mmとなっている。At this time, when the size of the spot at the focal position where the reflected light 1 from the condenser mirror 2 is focused is evaluated by a photographic film photosensitive method, the diameter is about 7 mm.
【0025】次に長尺型の赤外線ランプ5aを有する加
熱手段5を図1に示すような位置に配置し、赤外線の集
光板5bと照射パワーを調整して集光鏡2の表面の温度
ができるだけ均一になる様に加熱放射した。この調整後
の集光鏡2の表面の温度分布は図2の曲線bに示すよう
に温度35℃のほぼ均一な温度分布となった。この時放
射光1の焦点位置での反射光ビームのスポットの大きさ
は直径約4mmであった。Next, a heating means 5 having a long infrared lamp 5a is arranged at a position as shown in FIG. 1, and the infrared light collector 5b and the irradiation power are adjusted so that the temperature of the surface of the collector mirror 2 becomes lower. Heat was emitted to make it as uniform as possible. The temperature distribution on the surface of the condenser mirror 2 after this adjustment was a substantially uniform temperature distribution of 35 ° C. as shown by the curve b in FIG. At this time, the size of the spot of the reflected light beam at the focal position of the emitted light 1 was about 4 mm in diameter.
【0026】さらに集光鏡2の裏面の加熱手段7に通電
して熱電対7aで裏面の温度をモニターしながら制御部
9によりその温度が集光鏡2の表面の温度と同一になる
様に加熱手段7の通電量を調整した。この時、集光鏡2
の表面および裏面の温度は約40℃となった。この状態
で集光鏡2の焦点位置での反射ビームのスポットの大き
さを評価すると直径が約2mmとなり、ほぼ設計値の集
光能が得られた。Further, while energizing the heating means 7 on the back surface of the condenser mirror 2 and monitoring the temperature of the back surface with the thermocouple 7a, the control unit 9 controls the temperature to be the same as the surface temperature of the condenser mirror 2. The amount of electricity supplied to the heating means 7 was adjusted. At this time, the focusing mirror 2
The temperature of the front and back surfaces was about 40 ° C. In this state, when the size of the spot of the reflected beam at the focal position of the converging mirror 2 was evaluated, the diameter was about 2 mm, and the light condensing ability of a design value was obtained.
【0027】このように本実施例では光学素子2の温度
分布を適切に制御し、これにより光学素子の形状変化を
防止し、良好なる光学性能を容易に得ることができるよ
うにしている。尚本実施例では光学素子として集光鏡
(凹面鏡)を用いた場合を示したが本発明に適用するこ
とができる光学素子としてはレンズ,反射鏡,ビームス
プリッター,偏光板,分光結晶,回折格子,光学フィル
ター,エタロン,多層膜鏡,露光装置用マスク,レチク
ル等がある。いずれの光学素子もSR光やエキシマレー
ザー等の高強度の光源とともに使用される光学装置にお
いて適用可能である。As described above, in the present embodiment, the temperature distribution of the optical element 2 is appropriately controlled, whereby the shape change of the optical element is prevented, and good optical performance can be easily obtained. In this embodiment, the case where a condenser mirror (concave mirror) is used as an optical element has been described. However, as an optical element applicable to the present invention, a lens, a reflecting mirror, a beam splitter, a polarizing plate, a spectral crystal, a diffraction grating, , Optical filters, etalons, multilayer mirrors, masks for exposure equipment, reticles, etc. Any of the optical elements can be applied to an optical device used with a high-intensity light source such as SR light or excimer laser.
【0028】光学素子の温度分布測定手段としては赤外
線カメラの他に1次元または2次元の赤外線センサーア
レイ等が適用可能である。また前記光学素子内および表
面又は裏面に熱電対や白金抵抗体等の温度測定素子を埋
設あるいは付着可能な場合にはこれらの温度測定素子を
複数設置しても良い。これによれば光学素子の温度分布
を良好に求めることもできるので好ましい。As the temperature distribution measuring means of the optical element, a one-dimensional or two-dimensional infrared sensor array or the like can be applied in addition to the infrared camera. When a temperature measuring element such as a thermocouple or a platinum resistor can be buried or attached inside the optical element and on the front surface or the rear surface, a plurality of such temperature measuring elements may be provided. According to this, the temperature distribution of the optical element can be favorably obtained, which is preferable.
【0029】光学素子の加熱手段として用いた赤外線ラ
ンプは、光学素子の温度分布の形状に応じて、ランプの
形状を選択し、また集光鏡やアパチャー等を利用して、
効率よく部分加熱できるようにしている。赤外線ランプ
の照射波長幅は、その光学装置で使用する光の波長が含
まれないように選択するのがノイズ光の入射を防止する
ことができるので良い。また照射方向は光学装置の光学
系を乱さないように選択し、これにより光学性能の低下
を防止している。The infrared lamp used as the heating means of the optical element selects the shape of the lamp in accordance with the shape of the temperature distribution of the optical element, and uses a condenser mirror, an aperture, etc.
Partial heating can be performed efficiently. It is preferable to select the irradiation wavelength width of the infrared lamp so as not to include the wavelength of light used in the optical device, because it is possible to prevent the incidence of noise light. The irradiation direction is selected so as not to disturb the optical system of the optical device, thereby preventing a decrease in optical performance.
【0030】また前記光学素子内および表面又は裏面に
電熱線等の加熱素子を埋設あるいは付着可能な場合は、
前記加熱素子を光学素子の所定部分に複数設置しても良
い。これによれば光学素子を部分可熱でき温度分布を均
一に制御することができるので好ましい。In the case where a heating element such as a heating wire can be embedded or adhered in the optical element and on the front surface or the back surface,
A plurality of the heating elements may be provided at a predetermined portion of the optical element. This is preferable because the optical element can be partially heated and the temperature distribution can be controlled uniformly.
【0031】本実施例においては光学素子への放射光の
照射時には、まず温度分布測定手段を用いて光学素子の
温度分布を計測している。そして次にこの温度分布が均
一となる様に加熱手段を用いて光学素子の所定部分を加
熱し、光学素子の熱歪みによる形状変化が最小となるよ
うにしている。加熱の量は温度分布計測をくり返し行
い、そのデータを制御手段で分析し、加熱手段にフィー
ドバックすることにより適宣調整している。In this embodiment, when irradiating the optical element with radiation light, the temperature distribution of the optical element is first measured using the temperature distribution measuring means. Then, a predetermined portion of the optical element is heated using a heating means so that the temperature distribution becomes uniform, so that a change in shape of the optical element due to thermal distortion is minimized. The amount of heating is appropriately adjusted by repeating the temperature distribution measurement, analyzing the data by the control means, and feeding it back to the heating means.
【0032】また温度分布データの制御手段から加熱手
段へのフィードバックにあたっては有限要素法などの計
算手段により温度分布による光学素子の変形量を計算
し、光学素子の形状が装置の目的に対して最適なものと
なる様な加熱方法を求めて、加熱手段にフィードバック
するようにしても良い。When the temperature distribution data is fed back from the control means to the heating means, the amount of deformation of the optical element due to the temperature distribution is calculated by calculation means such as the finite element method, and the shape of the optical element is optimized for the purpose of the apparatus. It is also possible to seek a heating method that makes the heating process easier and feed it back to the heating means.
【0033】特に反射型の光学素子においては光源から
の放射光の照射により熱は表面から流入し、光学素子の
裏面との間に温度分布を生じる。このため光学素子の表
面の温度分布を均一にしただけでは光学素子の変形をな
くすることが難しい。そこで本発明では反射型の光学素
子においては前述の如く光学素子の表面および裏面の両
方に加熱手段を設けるのが良い。これによれば光学素子
の表面と裏面での温度分布がより均一となり光学素子の
変形をより少なくすることができる。In particular, in a reflection type optical element, heat flows in from the front surface by irradiation of radiation light from a light source, and a temperature distribution is generated between the optical element and the rear surface. For this reason, it is difficult to eliminate deformation of the optical element only by making the temperature distribution on the surface of the optical element uniform. Therefore, in the present invention, it is preferable to provide the heating means on both the front surface and the back surface of the optical element as described above in the reflection type optical element. According to this, the temperature distribution on the front surface and the back surface of the optical element becomes more uniform, and the deformation of the optical element can be further reduced.
【0034】図3は本発明をレーザプラズマX線源を光
源とした軟X線用の半導体素子製造用の縮小投影型の露
光装置に適用した時の実施例2の模式図である。FIG. 3 is a schematic view of Embodiment 2 when the present invention is applied to a reduction projection type exposure apparatus for manufacturing a semiconductor device for soft X-rays using a laser plasma X-ray source as a light source.
【0035】11はエキシマレーザである。エキシマレ
ーザ11からの光束11aはレンズ12で集光し、サマ
リウムSm材料のターゲット13に照射している。これ
よりターゲット13よりレーザプラズマX線14を発生
させている。ターゲット13から発生したX線14はベ
リリウムのフィルタ15およびアパチャー16を通過さ
せ、光学素子としての反射型マスク17を照射してい
る。反射型マスク17から反射したX線は縮小ミラー1
9で反射し、ウェハ位置20にマスク17の像を形成す
る。18はホルダーであり反射型マスク17を支持する
と共にマスク17を冷却する機能を兼ねている。21は
加熱手段でありマスク17の表面に輪帯状に蒸着された
白金抵抗線を有し、マスク17の表面を加熱している。
22は赤外線カメラ、23は他方の加熱手段であり反射
型マスク17の裏面を加熱している。加熱手段21,2
3は反射型マスク17の温度分布を変化させる手段の一
要素を構成している。Reference numeral 11 denotes an excimer laser. A light beam 11a from the excimer laser 11 is condensed by a lens 12 and irradiates a target 13 made of a samarium Sm material. Thus, laser plasma X-rays 14 are generated from the target 13. X-rays 14 generated from the target 13 pass through a beryllium filter 15 and an aperture 16 and irradiate a reflective mask 17 as an optical element. X-rays reflected from the reflective mask 17 are reflected by the reduction mirror 1
At 9, an image of the mask 17 is formed at the wafer position 20. Reference numeral 18 denotes a holder that supports the reflective mask 17 and also has a function of cooling the mask 17. Reference numeral 21 denotes a heating means having a platinum resistance wire deposited in a ring shape on the surface of the mask 17 to heat the surface of the mask 17.
Reference numeral 22 denotes an infrared camera, and reference numeral 23 denotes another heating means for heating the back surface of the reflective mask 17. Heating means 21
Reference numeral 3 denotes one element of a means for changing the temperature distribution of the reflective mask 17.
【0036】本実施例における反射型マスク17の表面
には特開平1−175731号公報で提案している方法
で多層膜を施した軟X線反射パターンが形成してある。On the surface of the reflective mask 17 in this embodiment, a soft X-ray reflection pattern provided with a multilayer film by the method proposed in Japanese Patent Application Laid-Open No. 1-175731 is formed.
【0037】また表面形状は光学的収差を少なくするた
め、曲面形状に加工している。縮小ミラー19は複数個
のミラーを用いた縮小光学系を用いることも可能であ
り、縮小ミラー19の表面は反射型マスク17で反射さ
れる軟X線と同じ波長を反射するように多層膜をコート
している。縮小ミラー19の縮小率は1/5である。本
実施例ではレーザープラズマX線源から発生する種々の
波長のX線のうち中心波長130Åの軟X線を用いてい
る。The surface is processed into a curved surface in order to reduce optical aberrations. It is also possible to use a reduction optical system using a plurality of mirrors as the reduction mirror 19, and the surface of the reduction mirror 19 is formed of a multilayer film so as to reflect the same wavelength as the soft X-ray reflected by the reflective mask 17. Coat. The reduction ratio of the reduction mirror 19 is 1/5. In this embodiment, soft X-rays having a center wavelength of 130 ° are used among X-rays of various wavelengths generated from a laser plasma X-ray source.
【0038】エキシマレーザーのエネルギーを50mJ
/パルス、繰り返し周波数を300Hzとしてサマリウ
ムターゲット13よりX線を発生させ反射型マスク17
の表面にX線を照射した。図4の曲線Cはこの時の赤外
線カメラ22で測定したマスク表面の温度分布である。
同図に示すように温度分布はほぼ点対称型であり、中心
部分では周囲に比べ約1.2℃の温度上昇が見られた。The energy of the excimer laser is set to 50 mJ.
X-rays are generated from the samarium target 13 at a pulse / repetition frequency of 300 Hz and the reflection type mask 17 is used.
Was irradiated with X-rays. A curve C in FIG. 4 is a temperature distribution on the mask surface measured by the infrared camera 22 at this time.
As shown in the figure, the temperature distribution was almost point-symmetric, and a temperature rise of about 1.2 ° C. was observed at the center compared to the surroundings.
【0039】この時ウェハ位置20の前後の位置でレジ
ストを塗布したウェハ上にマスクの像を結像して評価し
たところ、約10μmの焦点面のずれがあり、また最大
0.01%の像の歪曲があった。At this time, an image of the mask was formed on the wafer coated with the resist at positions before and after the wafer position 20 and evaluated. As a result, there was a displacement of the focal plane of about 10 μm, and an image of 0.01% at the maximum. Was distorted.
【0040】次に反射型マスク17上の白金抵抗線21
および裏面の加熱手段23の加熱用ヒーター23aに通
電し、赤外線カメラ22でモニターしながら加熱量を調
整したところ、図4の曲線dに示すようなほぼ均一の温
度分布となった。この時前記と同様の方法で結像状態を
評価したところ焦点面のずれは2μm以下となり、また
像の歪曲は0.002%以下となった。Next, the platinum resistance wire 21 on the reflective mask 17
When the heater 23a of the heating means 23 on the back side was energized and the amount of heating was adjusted while monitoring with the infrared camera 22, the temperature distribution became almost uniform as shown by the curve d in FIG. At this time, when the imaging state was evaluated by the same method as described above, the shift of the focal plane was 2 μm or less, and the distortion of the image was 0.002% or less.
【0041】[0041]
【発明の効果】本発明によれば光学素子の形状を温度調
整によって極めて正確に制御することができ、光学素子
の光学性能を維持することが可能である。特に近年その
技術開発の進歩のめざましいシンクロトロン放射源やレ
ーザープラズマX線源などの高輝度の光源を持つX線光
学装置において有効であり、たとえばX線縮小型の露光
装置に適用すれば極めて高い露光が可能となる。According to the present invention, the shape of the optical element can be very accurately controlled by adjusting the temperature, and the optical performance of the optical element can be maintained. In particular, it is effective in an X-ray optical device having a high-brightness light source such as a synchrotron radiation source or a laser plasma X-ray source in which the technical development has been remarkably advanced in recent years. Exposure becomes possible.
【0042】[0042]
【図1】 本発明の実施例1の要部概略図FIG. 1 is a schematic view of a main part of a first embodiment of the present invention.
【図2】 図1の光学素子の表面温度分布を示す説明図FIG. 2 is an explanatory diagram showing a surface temperature distribution of the optical element of FIG. 1;
【図3】 本発明の実施例2の要部概略図FIG. 3 is a schematic diagram of a main part of a second embodiment of the present invention.
【図4】 図3の反射型マスクの表面温度分布を示す説
明図FIG. 4 is an explanatory diagram showing a surface temperature distribution of the reflective mask of FIG. 3;
1 シンクロトロン放射光 2 集光鏡 3,18 ホルダー 4,22 赤外線カメラ 5,7,21,23 加熱手段 8 温度分布測定手段 9,24 制御手段 11 エキシマレーザ 11a エキシマレーザ光線 12 集光レンズ 13 ターゲット 15 ベリリウムフィルター 17 反射型マスク 19 縮小ミラー 20 ウェハ位置 DESCRIPTION OF SYMBOLS 1 Synchrotron radiation light 2 Condensing mirror 3, 18 holder 4, 22 Infrared camera 5, 7, 21, 23 Heating means 8 Temperature distribution measuring means 9, 24 Control means 11 Excimer laser 11a Excimer laser beam 12 Condensing lens 13 Target 15 Beryllium filter 17 Reflective mask 19 Reduction mirror 20 Wafer position
フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G21K 1/06 H05H 13/04 Continued on the front page (58) Fields surveyed (Int.Cl. 7 , DB name) G21K 1/06 H05H 13/04
Claims (9)
定に基づいて加熱手段により該光学素子を加熱して該光
学素子の温度むらを補正し、光学素子の熱歪みによる変
形を抑制することを特徴とする光学素子の形状制御方
法。1. A method of measuring temperature distribution information of an optical element, heating the optical element by a heating means based on the measurement, correcting temperature unevenness of the optical element, and suppressing deformation of the optical element due to thermal distortion. A method for controlling the shape of an optical element.
一方から該光学素子を加熱して温度調整することを特徴
とする請求項1記載の光学素子の形状制御方法。2. The method for controlling the shape of an optical element according to claim 1, wherein the temperature of the optical element is adjusted by heating the optical element from at least one of a front surface and a rear surface of the optical element.
用いて加熱を行なうことを特徴とする請求項1記載の光
学素子の形状制御方法。3. The method according to claim 1, wherein the heating is performed using at least one of infrared irradiation and heating wire.
よって行なうことを特徴とする請求項1記載の光学素子
の形状制御方法。4. The method according to claim 1, wherein the measurement of the temperature distribution information is performed by detecting infrared rays.
マスクであることを特徴とする請求項1記載の光学素子
の形状制御方法。5. The method according to claim 1, wherein the optical element is a reflective mask having a pattern.
光学系を介してウエハに投影露光する露光装置であっ
て、該反射型マスクの温度分布情報を測定する測定手段
と、該測定手段の測定に基づいて加熱手段により該反射
型マスクを加熱して該反射型マスクの温度むらを補正
し、反射型マスクの熱歪みによる変形を抑制する手段と
を有することを特徴とする露光装置。6. An exposure apparatus for projecting and illuminating a pattern of an illuminated reflective mask onto a wafer via a reduction optical system, wherein the measuring means measures temperature distribution information of the reflective mask, and the measuring means measures The reflection by the heating means based on
An exposure apparatus comprising: means for heating a mold mask to correct temperature unevenness of the reflective mask, and suppressing deformation of the reflective mask due to thermal distortion.
反射部を有するX線マスクであることを特徴とする請求
項6記載の露光装置。7. An exposure apparatus according to claim 6, wherein said reflection type mask is an X-ray mask having an X-ray reflection portion formed of a multilayer film.
し、該ホルダーは冷却機能を兼ねていることを特徴とすAnd the holder also has a cooling function.
る請求項1記載の光学素子の形状制御方法。The method for controlling the shape of an optical element according to claim 1.
有し、該ホルダーは冷却機能を兼ねていることを特徴とCharacterized in that the holder also has a cooling function
する請求項6記載の露光装置。The exposure apparatus according to claim 6, wherein
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03255800A JP3132086B2 (en) | 1991-09-07 | 1991-09-07 | Optical element shape control method and exposure apparatus |
| CA002077572A CA2077572C (en) | 1991-09-07 | 1992-09-04 | Method of and apparatus for stabilizing shapes of objects, such as optical elements, as well as exposure apparatus using same and method of manufacturing semiconductr devices |
| EP92308030A EP0532236B1 (en) | 1991-09-07 | 1992-09-04 | System for stabilizing the shapes of optical elements, exposure apparatus using this system and method of manufacturing semiconductor devices |
| DE69220868T DE69220868T2 (en) | 1991-09-07 | 1992-09-04 | System for stabilizing the shapes of optical elements, exposure device using this system and method for manufacturing semiconductor devices |
| US08/270,794 US5390228A (en) | 1991-09-07 | 1994-07-05 | Method of and apparatus for stabilizing shapes of objects, such as optical elements, as well as exposure apparatus using same and method of manufacturing semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03255800A JP3132086B2 (en) | 1991-09-07 | 1991-09-07 | Optical element shape control method and exposure apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0566297A JPH0566297A (en) | 1993-03-19 |
| JP3132086B2 true JP3132086B2 (en) | 2001-02-05 |
Family
ID=17283813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03255800A Expired - Fee Related JP3132086B2 (en) | 1991-09-07 | 1991-09-07 | Optical element shape control method and exposure apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3132086B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6065842A (en) * | 1998-05-22 | 2000-05-23 | Raytheon Company | Heat maps for controlling deformations in optical components |
| US7098994B2 (en) * | 2004-01-16 | 2006-08-29 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7375794B2 (en) * | 2004-08-04 | 2008-05-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8064151B2 (en) * | 2007-08-14 | 2011-11-22 | Asml Netherlands B.V. | Lithographic apparatus and thermal optical manipulator control method |
| KR20120018196A (en) * | 2009-05-16 | 2012-02-29 | 칼 짜이스 에스엠테 게엠베하 | Projection exposure apparatus for semiconductor lithography comprising an optical calibration arrangement |
| DE102010039930A1 (en) * | 2010-08-30 | 2012-03-01 | Carl Zeiss Smt Gmbh | Projection exposure system |
| WO2014048651A1 (en) * | 2012-09-25 | 2014-04-03 | Asml Netherlands B.V. | Reticle heater to keep reticle heating uniform |
| JP2014137528A (en) * | 2013-01-18 | 2014-07-28 | Mitsubishi Electric Corp | Laser processing device and curvature variable reflection mirror unit |
-
1991
- 1991-09-07 JP JP03255800A patent/JP3132086B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566297A (en) | 1993-03-19 |
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