JP3133529B2 - Deposited film forming apparatus and deposited film forming method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention is sensitive to electromagnetic waves such as light (here, in a broad sense, ultraviolet, visible, infrared, X-ray, gamma-ray, etc.). The present invention relates to an apparatus and a method for forming an electrophotographic light-receiving member.

[0002]

2. Description of the Related Art In the field of image formation, a photoconductive material for forming a light receiving layer in a light receiving member has high sensitivity.
It has a high SN ratio [photocurrent (Ip) / dark current (Id)], has an absorption spectrum suitable for the spectral characteristics of the radiated electromagnetic wave, has a fast photoresponse, has a desired dark resistance value, and is used. Are required to be harmless to the human body. In particular, in the case of an electrophotographic light-receiving member incorporated in an electrophotographic apparatus used in an office as an office machine, the above-described non-polluting property at the time of use is important.

From such a viewpoint, there has been proposed an electrophotographic light-receiving member composed of amorphous silicon compensated with, for example, hydrogen and / or halogen (for example, fluorine, chlorine, etc.), and some of them are put to practical use. ing.

An electrophotographic light-receiving member made of amorphous silicon can be used as a material for an electrophotographic light-receiving member because it can substantially satisfy the above requirements and has high durability. Are better. However, the cost is much higher than that of electrophotographic light-receiving members composed of organic semiconductors (OPC) and the like, which are widely used at present. The development of highly productive devices that can be mass-produced in large quantities has been awaited.

There are various methods for forming such a deposited film of amorphous silicon.
Among them, a plasma CVD method in which a raw material gas is decomposed by an electric field such as direct current, RF, VHF, and microwave to form a deposited film on a substrate is widely used because a deposited film having a large area can be obtained relatively easily. ing. In recent years, several deposition film forming apparatuses have been proposed using a plasma CVD method for the purpose of improving productivity.

For example, Japanese Patent Application Laid-Open No. 2-197574 discloses an example of a deposited film forming apparatus using a microwave plasma CVD method. According to this publication, the apparatus has a circular dielectric window for microwave introduction, and can simultaneously hold a plurality of substrates arranged on concentric circles centered on the dielectric window, and It has a holding member capable of maintaining a vacuum when forming a deposited film, and means for transporting the holding member in a vacuum atmosphere.

[0007] With such a deposited film forming apparatus, the reaction vessel can be kept in a vacuum, so that the productivity has been improved to some extent and the quality of the deposited film has been improved by preventing contamination by dust.

[0008]

However, in such an apparatus, the deposited film adheres to components such as the dielectric window of the holding member or the holding member main body. If such a holding member or the like to which the deposited film adheres is used as it is for forming the deposited film of the next batch, the film adhered in the previous batch is peeled off during the deposition film formation and adheres to the substrate, and the deposited film to be formed is removed. The result is a significant loss of quality. Therefore, it is necessary to completely remove and regenerate the film adhered to the holding member or the like for each batch.

Conventionally, a method such as liquid honing (blast) wet etching has been used as the regeneration step.

However, in the case of regenerating by liquid honing, beads used for blasting enter into joints of parts, screw holes and the like. In the case of wet etching,
Even if the substrate is sufficiently washed with water after the completion of the etching, the etching liquid tends to remain in the above-mentioned portions, and there is a problem that the parts are contaminated by being blown out in a drying step of the parts after the washing.

[0011] In order to solve such problems, the parts incorporated in the holding member are completely disassembled, and even when liquid honing or wet etching is separately applied to each part, a certain degree is obtained as compared with the case where the parts are not disassembled. Although effective, beads or etchants tend to remain in complicated parts of the part, and it has been difficult to completely remove them.

The beads adhered to the component thus fly out during the deposition film formation due to factors such as mechanical vibrations and temperature changes due to heating of the substrate after being put into the deposition film forming apparatus.
It may adhere to the substrate surface. Also, in the case of regeneration by wet etching, even if the surface of the contaminated component is cleaned by wiping or the like, the etching solution cannot be sufficiently dropped, and fine powder remains on the component surface, and eventually the substrate surface. Will adhere.

Further, when the component is disassembled from the holding member, the incorporation and disassembly of the component into the holding member is repeated every time, so that, for example, a screw is generated from a screw portion for fixing the component, which is also the base material. Will adhere to the surface.

When the beads, the etching solution powder, or the chiriko adheres to the surface of the substrate as described above, the deposited film starts to grow abnormally with the nucleus as a nucleus, and forms spherical protrusions on the surface of the electrophotographic light receiving member. The spherical projections thus generated appear as image defects such as "black spots" and "white spots" on the copy image, and further cause cleaning failure of the light receiving member surface.

[0015] Further, while disassembling and assembling the components of the holding member for a long period of time, the assembling accuracy required for transporting the holding member cannot be obtained, and the transport process may be hindered.

[0016] The present invention solves the problems described above, inexpensive supply high quality amorphous silicon electrophotographic light-receiving member, highly deposition can increase the device efficiency by automating film forming apparatus and An object of the present invention is to provide a method for forming a deposited film .

[0017]

The apparatus for forming a deposited film according to the present invention is capable of maintaining a vacuum by closely adhering to a reaction vacuum vessel (hereinafter referred to as "reaction vessel"), a regeneration vessel, the reaction vacuum vessel, and the regeneration vessel. Holder for deposited film formation via a flexible holder
Holding members, at least the holder of the holding member DOO
For transport between the reaction vacuum vessel and the regeneration vessel
Conveying means fit, a deposited film forming apparatus which have a capital, the reaction vacuum chamber a source gas supply pipe and the exhaust system for supplying a raw material gas used to form the deposited film is connected, The regeneration container includes at least the holding member and the holder.
Cl to etch the deposited deposited film on loaders
F ₃ gas etching gas supply pipe and the exhaust system for supplying is connected to said retaining member, and each deposited film forming space by being in close contact arranged in the reaction vacuum chamber and <br/> regeneration vessel An etching space is formed. In the present invention, further, a holding member in which a plurality of substrates for forming a deposited film are arranged concentrically via a holder in a vacuum container is formed to form a deposited film forming space, and the deposited film is formed on the substrate. After the formation, the holding member is held via the holder.
That, together with the deposited film was formed substrate was placed in the cooling vessel, said then a plurality of base bodies deposited film is formed Hol
After removal from the holder, the holding member is
Placed playback vessel to form an etching space, the ClF ₃ gas in a state of arranging the holding member to the regeneration vessel
The holding member and the holder introduced into the etching space
The present invention provides a method for forming a deposited film including dry-etching a deposit deposited on a substrate.

In the apparatus of the present invention, it is important to use ClF ₃ as an etching gas. Since the film deposited on the holding member and the components incorporated in the holding member is relatively dense, the etching rate in dry etching is much lower than that in the case of a deposit such as polysilane. Therefore, for example, carbon tetrafluoride (CF
₄ ) Even if dry etching is performed by using a gas other than ClF ₃ such as a mixed gas of oxygen (O ₂ ) and supplying RF power and microwave power to generate plasma, a practical time In some cases, not only the part cannot be regenerated but also the effect of the etching is hardly observed.

On the other hand, in dry etching using ClF ₃ , not only when plasma is generated by supplying RF power or the like, but also when components are simply immersed in a ClF ₃ gas atmosphere without generating plasma, practically, It is known that a sufficient etching effect can be obtained .

The present inventors have developed a hook and an e-tube after forming a deposited film.
A holding member incorporating components such as
ClF_Three A test was conducted to regenerate. As a result, C
IF _Three Only when immersed in water for practical use.
In the interval, it is possible to remove all deposited films.
Was confirmed. However, at the same time,
It was also found that there was a difference in the rolling effect.

In order to improve the efficiency and productivity of the apparatus,
Higher speed reproduction processing is desired. For this purpose, it is necessary to eliminate the difference in the etching effects as described above and to uniformly dry-etch each part.

According to the knowledge of the present inventors, such a difference in the etching effect is caused by the complicated shape of the holding member and the components assembled to the holding member, which causes a stagnation in the flow of the etching gas, and the etching effect is partially reduced. It is considered that the cause is that gas stays in the gas.

Therefore, the apparatus of the present invention is provided with a mechanism for preventing the stagnation of the etching gas, such as a partition, inside the regeneration container of the holding member.

Hereinafter, the present invention will be described more specifically with reference to the drawings. FIG. 1 is a schematic diagram showing an example of an apparatus configuration in which the deposited film forming apparatus of the present invention is applied to a microwave plasma CVD method. In the figure, 1101, 1201, 13
Numerals 01, 1501, and 1401 denote vacuum containers for putting a holding member incorporating a substrate and a dielectric window into a deposition film forming apparatus in a clean atmosphere to create a vacuum, and depositing a deposition film on a substrate by microwave plasma CVD. A reaction vessel for forming, a cooling vessel for cooling and taking out a substrate after a deposited film is formed, a regenerating vessel for regenerating a holding member from which only the substrate on which a deposited film is formed is removed, and holding in these vessels A transfer container for transferring the members in a vacuum atmosphere, wherein each container has a gate valve 1102, 1
202, 1302, 1502 and 1402 are attached. Further, 1103, 1101, 1301, and 1501 containers have 1103 and 1101, respectively.
4, 1203 and 1204, 1303 and 130
4, and 1503 and 1504 exhaust devices are 1105 and 1106, 1205 and 120, respectively.
6, 1305 and 1306, and 1505 and 1506.

Next, FIG. 2 is a schematic cross-sectional view of one example of the reaction vessel and the holding member, and FIG. 3 is a schematic diagram of the holding member to which the base is attached. Inside the reaction vessel 1201, a rotating shaft 1220 for supporting the base 1211 and a heater 1226 for heating the base are provided. A motor 1221 is connected to the rotating shaft so that the substrate can be rotated when a deposited film is formed. The source gas is supplied from the source gas supply device into the reaction vessel via the source gas supply pipe 1223 via the valve 1224. On the other hand, the holding member 1210 is provided with a dielectric window 1212 and a hook 1214 to which a base is attached by a holder.
When the holding member is put into the reaction container, the holding member is in close contact with the inner wall of the reaction container via the vacuum seal member 1225. The vacuum in the interior is maintained, and the deposition film formation space A is maintained.
To form

FIG. 4 is a schematic cross-sectional view of one example of a regeneration container for dry etching using ClF ₃ . The etching gas is supplied from the etching gas supply device to the valve 152.
4 through the etching gas supply pipe 1523 into the regeneration container 1501. Even when the holding member 1210 is put into the regeneration container, as in the case of the reaction container, even if the space D above the holding member is returned to the atmospheric pressure, the vacuum in the regeneration container is maintained and the etching space C is formed. You.

Next, a specific procedure for forming a light receiving member for electrophotography using the deposited film forming apparatus shown in these figures will be described.

First, the base member 1211 is held in the clean atmosphere via the holder 1213 and the hook 1214.
210, and put it into the vacuum vessel 1101. Next, the valve 1105 is opened, and the inside of the vacuum vessel is exhausted by the exhaust device 1103. When a desired degree of vacuum is obtained, the transfer container 1401 is moved onto the vacuum container, and the gate valves 1102 and 1402 are brought into close contact with each other.
After opening 106, the space between the gate valves 1102 and 1402 is evacuated by the exhaust device 1104. At this time, if the inside of the transfer container 1401 is not evacuated, the gate valve 1402 is opened first and the inside of the transfer container is also evacuated at the same time. When the degree of vacuum in the space between the gate valves 1102 and 1402 reaches a desired value of, for example, 1 × 10 ⁻¹ Torr or less, the two valves are opened, and the up / down mechanism provided in the transfer container is operated. The holding member is stored in the transport container. Next, the gate valve 1102
And 1402 are closed, the space between them is leaked, and after it is confirmed that the atmospheric pressure has been reached, these gate valves are separated from each other, and the transfer of the holding member in a vacuum atmosphere is terminated.

Next, the transfer container is moved onto a reaction container 1201 whose interior is previously evacuated by the exhaust device 1203, and the gate valves 1202 and 1402 are brought into close contact with each other. Here, the space between the gate valves is evacuated by the same procedure as above, and both the gate valves are opened to move the holding member into the reaction vessel. After that, close the gate valve 1402,
After leaking the space between the valve and the holding member, the gate valves are separated from each other. At this time, the space B in FIG. 2 is at atmospheric pressure, but the vacuum in the reaction vessel is maintained by the holding member 1210 and the vacuum seal member 1225, and the deposited film forming space A is formed. Here, 100-1
The substrate is heated by a heater 1226 provided in the reaction vessel while maintaining a predetermined degree of vacuum of × 10 ⁻³ Torr. At this time, an inert gas such as argon (Ar) may be introduced into the reaction vessel from the source gas supply device via the valve 1224 and the source gas supply pipe 1223.

After heating the substrate to a desired temperature of 20 to 400 ° C., the inside of the reaction vessel is once subjected to a high vacuum (eg, 1 × 10 ^−3).
Torr or less).
4. The source gas is introduced into the reaction vessel via the pipe 1223. At this time, the dielectric window held by the holding member is connected to the microwave power supply via the waveguide at the same time.

When the flow rate of the raw material gas has reached a predetermined constant flow rate, the valve 1205 is opened while watching the indication of the vacuum gauge, and the predetermined degree of vacuum is set to 10 Torr or less. Next, microwave power is supplied to generate plasma, and a deposited film is formed on the substrate. At this time, a uniform deposited film is formed on the substrate by rotating the substrate supported by the rotating shaft 1220 by the motor 1221.

When the formation of the deposited film is completed,
The waveguide is removed from the dielectric window, and the gate valve 12 is removed again.
02 and 1402 are brought into close contact with each other, and the holding member is housed in a transfer container while maintaining the vacuum, and the transfer container is moved onto the cooling container 1301 in the same procedure as described above. Here, the gate valves 1302 and 1402 are brought into close contact with each other, and the holding member is put in a vacuum atmosphere in a cooling container that has been evacuated in advance by the same procedure as described above.

The substrate on which the deposited film has been formed is cooled in a cooling vessel 1301.
After cooling to the desired temperature in the leaking cooling vessel,
Once the holding member is taken out into the atmosphere, the holder 1213 and the base 1211 are removed from the hook 1214 attached to the holding member. Further, after removing the base from the holder, the holder is reattached to the hook, and the holding member is put back into the cooling container.

Next, the exhaust valve 1305 is opened, the interior of the cooling vessel is exhausted by the exhaust device 1303, and when the desired degree of vacuum is reached, the gate valves 1402 and 1302 are brought into close contact with each other. It is transported to the transport container below. The transport container is regenerated by regenerating the container 150 in which the inside is previously evacuated by the exhaust device 1503.
1 and the gate valves 1402 and 1502 are brought into close contact with each other, and the holding member is put into the regeneration container under a vacuum atmosphere in the same procedure as described above. After that, the gate valve 1402
To leak the space between the gate valve and the holding member. At this time, the space D shown in FIG. 4 returns to the atmospheric pressure, but the inside of the regeneration container is kept at a vacuum to form the etching space C.

After the loading of the holding member is completed, an etching gas is introduced from the etching gas supply device into the regeneration container via the valve 1524 and the etching gas supply pipe 1523. When the flow rate of the etching gas becomes a predetermined constant flow rate, the opening of the valve 1505 is adjusted to a predetermined pressure while watching the display of the pressure gauge, and each part is regenerated. When the regeneration is completed, the valve 1524 is closed to stop the supply of the etching gas, and the valve 1505 is fully opened to evacuate the vessel to a high vacuum, and if necessary, nitrogen (N
₂ ) After purging with Ar or the like, the inside of the regeneration container is leaked, and the holding member is taken out to the atmosphere. This is the end of one batch.

At this time, the vacuum is maintained without leaking the inside of the regeneration container, and the holding member is put into the vacuum container 1101 in a vacuum by the transfer container. The holding member may be taken out.

In addition to the above, for example, a heating vacuum vessel for heating the substrate to a desired temperature can be provided in the configuration of the apparatus of the present invention. In this case, the time during which the holding member occupies the reaction container in one batch is reduced as compared with the case where the substrate is heated in the reaction container.

Further, the apparatus of the present invention may be provided with a plurality of transport containers. In this case, by using a transfer container for the holding member before the deposition film is formed and a transfer container for the holding member after the formation of the deposition film, it occurs during cooling after the formation of the deposition film, which is usually difficult to prevent. It is possible to effectively prevent contamination of a clean atmosphere due to peeling of a minute film.

Further, in the apparatus of the present invention, it is also possible to incorporate a component, such as a source gas supply pipe, which is desirably regenerated for each film formation into the holding member and regenerate it in the regenerating vessel.

Etching gas ClF_Three Is 1 to 100%
It shows an etching effect at any concentration in the range,
Preferably used at a concentration of 5 to 70%, optimally 10 to 50%.
To use. ClF_Three As a dilution gas used for concentration adjustment
Are argon (Ar), helium (He), neon (N
e) and other inert gases, as well as nitrogen (N_Two ), Oxygen (O
_Two )and so on.

[0041] While the internal pressure of the regeneration vessel during dry etching is appropriately selected optimum range, generally 1 × 10 ^-3 ~
750 Torr, preferably 1 × 10 ^{−3 to} 100 Torr
r, optimally 1 × 10 ^{−3 to} 10 Torr.

The material of the charging container, the reaction container, the cooling container and the transporting container of the deposited film forming apparatus of the present invention may be any material as long as it can be vacuum-sealed, but aluminum, nickel or their alloys, SUS304, SUS316 and SUS4.
Not only metals such as stainless steel such as 30 but also quartz glass can be used. The material of the components such as the recycling container, the holding member and the holder attached to the holding member, the hook, and the like are determined in consideration of the resistance to dry etching.
All of the above metals could be used without any problem. Alumina ceramics, quartz glass, etc., which efficiently transmit microwaves, are used for the dielectric window, and these materials have sufficient resistance to dry etching.

Although the deposited film forming apparatus of the present invention can be applied to a plasma CVD method for generating plasma using any electric field, in order to make full use of the features of the apparatus configuration of the present invention, it is necessary to use a raw material gas. High decomposition efficiency, frequency 20MH
Suitable for electromagnetic waves of z or more and at a frequency of 105 MHz
The VHF band near z and the microwave band of 2.45 GHz are optimal.

The raw material gas is used for the required electrophotographic photoreception.
It is appropriately determined according to the characteristics of the member, etc.
H_Four ), Disilane (Si_Two H₆ Supply of silicon atoms
Gas, diborane (B_Two H₆ ), Phosphine (PH_Three )etc
So-called dopant supply gas, hydrogen (H_Two ), Heliu
(He), methane (CH_Four ), Acetylene (C_Two H
_Two ), Germanic (GeH_Four ) Is used.

[0045]

EXAMPLES The effects of the apparatus of the present invention will be described below with reference to specific examples, but the present invention is not limited to these examples.

Example 1 An apparatus for forming a deposited film for a photoreceptor member for electrophotography using a microwave plasma CVD method shown in FIGS. 1-4, using six mirror-finished, degreased and cleaned aluminum cylinders having a diameter of 108 mm as a base, and Using the holding member, a deposited film for a light receiving member for electrophotography was formed in the above procedure under the conditions shown in Table 1. After the formation of the deposited film, the holding member from which the substrate was removed was put into a regeneration container, and was subjected to dry etching under the conditions shown in Table 2 for regeneration. Further, a deposited film of the second batch was formed using the regenerated holding member. In the above steps, the components incorporated in the holding member were not disassembled at all.

[0047]

[Table 1]

[0048]

[Table 2] The above operation was repeated to form a total of 5 batches of deposited films, and the obtained electrophotographic light-receiving members were A, B, C,
D, E, and F were evaluated for each image defect.

Next, the produced light receiving member for electrophotography was set on a copying machine NP6550 manufactured by Canon Inc., and a black original and a white original were placed on a platen to obtain a solid black image and a solid white image. These images were inspected, and the overall evaluation was evaluated as image defects.

The evaluation results are as follows: 良好 Very good: neither “black spots” nor “white spots” are recognized.

Good: "black spots" and "white spots" are 2 to 2
Three are recognized, but all are very small and difficult to recognize as image defects.

(2) No problem in practical use: Several "black spots" and "white spots" are recognized, but both are small and there is no problem in practical images.

X Problem: There are many or large "black spots" and "white spots", and characters may be erroneously recognized on a practical image. Classified as

Comparative Experimental Example 1 Formation of a deposited film for six electrophotographic light-receiving members (A, B, C, D, E, F) under the conditions shown in Table 1 in exactly the same manner as in Example 1. After that, the step of regenerating the holding member was omitted, and a deposited film of the second batch was formed. Also in this case, the components incorporated in the holding member were not disassembled at all. The above operation was repeated, and a total of five batches of deposited films were formed.

The light receiving member for electrophotography thus produced was evaluated in the same manner as in Example 1.

Comparative Experimental Example 2 Deposited film formation for six electrophotographic light-receiving members (A, B, C, D, E, F) under the conditions shown in Table 1 in exactly the same manner as in Example 1. After that, the components incorporated in the holding member were disassembled, and regenerated by liquid honing and wet etching, respectively. After this regenerating step, it was confirmed that there was no residue of the deposited film, and the film was dried in an oven at 150 ° C. for 1 hour, and the components were assembled into the holding member again. Then, the deposited film of the second batch was formed. . By repeating the above operation, a total of five batches of deposited films were formed.

The disassembly and reproduction of parts from the holding member,
The average time required for the entire regeneration process including drying and assembly was about 4 hours and 30 minutes per batch.

The light receiving member for electrophotography thus produced was evaluated in the same manner as in Example 1.

Table 3 also shows the results of Example 1 and Comparative Examples 1 and 2. In Example 1, good results were obtained for the electrophotographic light-receiving members of all five batches, whereas in Comparative Experimental Example 1, the image defects tended to be worse each time the deposited film formation was repeated, and the holding member Also, traces of peeling of the deposited film from the surface of the component assembled to the holding member were confirmed, confirming that the regeneration process for each batch was indispensable .

[0060]

[Table 3] On the other hand, in Comparative Experimental Example 2, the image defects deteriorated in the second batch, and thereafter, substantially the same image defects were maintained. This is because although the regenerating process can prevent image defects from being deteriorated due to the peeling of the deposited film as in Comparative Experimental Example 1, the effects of liquid honing and wet etching residues and Kiriko due to disassembly and assembly appear. Conceivable.

Example 2 An apparatus for forming a deposited film for a photoreceptor member for electrophotography by a microwave plasma CVD method shown in FIGS. 1-3 using six mirror-finished, degreased and cleaned aluminum cylinders having a diameter of 108 mm as a base, and Using the holding member, a deposited film was formed in the above procedure under the conditions shown in Table 4. In the present example, the partition wall schematically shown in FIGS. 5 and 6 was provided in the regeneration container to prevent the etching gas from staying. The holding member after the formation of the deposited film in a state where the parts were assembled was put in this container, and the regeneration was performed under the conditions shown in Table 5.

[0062]

[Table 4]

[0063]

[Table 5] After the regeneration step, the holding member was taken out of the regeneration container, and the effect of the etching was visually evaluated. As a result, no residue of the deposited film was observed.

COMPARATIVE EXPERIMENTAL EXAMPLE 3 After forming a deposited film under exactly the same conditions as in Example 2, the holding member in which the components were incorporated was put into a regenerating container without a partition as in the Example, and Regeneration was performed under the same conditions as in Table 5 as in Table 2.

After the regeneration step, the holding member was taken out of the regeneration container, and the effect of etching was visually evaluated. As a result, a slight remaining of the deposited film was observed mainly in a portion having a complicated shape. The holding member was put into the regeneration container again, and the etching was further continued. As a result of measuring the time until the completion of the regeneration without any remaining of the deposited film, it was about 125 minutes.

[0066]

As described above, in the deposited film forming apparatus, the regeneration of the holding member is performed by dry etching using ClF ₃ as an etching gas.
(A) There are no problems such as residual beads in the case of liquid honing and residual etchant in the case of wet etching, and there is very little possibility of deposits adhering to the substrate surface. The generation of spherical protrusions can be greatly reduced, and the quality of the light receiving member for electrophotography improves,
(B) Since various components assembled on the holding member can be regenerated without disassembly, i) no screwing, no scraping due to rubbing of the components, etc. can be prevented, and the generation of spherical projections can be prevented; ii. ) Assembling accuracy can be maintained, and troubles such as transport failure due to insufficient accuracy are prevented even after long-term use.
iii) The component regeneration process can be easily automated, which leads to a reduction in labor costs and a very advantageous effect for a mass production apparatus such as a reduction in regeneration processing time. Further, by providing a function for preventing the etching gas from staying in the regeneration container, the etching effect is improved. As described above, according to the present invention, a deposited film forming apparatus capable of efficiently producing a high-quality deposited film having a mechanism for simultaneously holding at least a plurality of substrates and a holding member having a vacuum maintaining function in a vacuum. Is provided.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a configuration of a deposited film forming apparatus.

FIG. 2 is a schematic longitudinal sectional view of a reaction vessel equipped with a holding member.

FIG. 3 is a schematic view of a holding member.

FIG. 4 is a schematic longitudinal sectional view of a regeneration container.

FIG. 5 is a schematic cross-sectional view of a regeneration container having a gas retention preventing mechanism.

FIG. 6 is a schematic longitudinal sectional view of a regeneration container having a gas retention preventing mechanism.

[Explanation of symbols]

1101 Vacuum container for holding member 1102, 1202, 1302, 1402, 1502
Gate valve 1103, 1104, 1203, 1204, 1303
1304, 1503, 1504 Exhaust device 1105, 1106, 1205, 1206, 1305
1306, 1505, 1506 Valve 1201 Reaction vessel 1210 Holding member 1211 Base 1212 Dielectric window 1213 Holder 1214 Hook 1220 Rotating shaft 1221 Motor 1223 Source gas supply pipe 1224, 1524 Valve 1225, 1525 Vacuum seal member 1226 Heater 1301 Cooling container 1401 Transport container 1501 Regeneration container 1523 Etching gas supply pipe 1526 Partition wall

Continuation of the front page (72) Inventor Hirokazu Ohri 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-1-307776 (JP, A) JP-A-4-323378 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 C23C 16/50 G03G 5/00 101 H01L 31/08

Claims (7)

(57) [Claims] (1) Reaction vacuum chamber, regenerator vessel, the reaction vacuum container and vacuum can be maintained in close contact disposed regeneration vessel Hol
A holding member for holding a substrate for forming a deposited film through a holder,
Containers and conveying means for conveying between the regeneration vessel, a deposited film forming apparatus which have a capital, material gas for supplying a material gas reaction vacuum vessel used to form a deposited film A supply pipe and an exhaust device are connected, and the regeneration container is connected to an etching gas supply pipe and an exhaust device for supplying ClF ₃ gas for etching at least the deposition film deposited on the holding member and the holder. ,
The holding member is attached to the reaction vacuum vessel and the regeneration vessel .
Deposited film forming apparatus characterized by each of the deposited film forming space and the etching space is formed by being disposed, respectively adhesion. 2. The deposition apparatus according to claim 1, wherein the deposition film forming apparatus further comprises at least a holding member charging vacuum container for charging the holding member and a cooling container for cooling a substrate on which the deposition film is formed. Film forming equipment. 3. The deposited film forming apparatus according to claim 1, wherein said holding member is capable of holding a plurality of substrates. 4. The deposited film forming apparatus according to claim 1, wherein said holding member is capable of holding a plurality of substrates concentrically. 5. The deposition film forming apparatus according to claim 1, wherein the holding member is configured by combining a plurality of components. 6. A vacuum vessel, place the holding member deposited films forming the base for a plurality concentrically arranged through the holder sedimentary
After forming a deposition film forming space and forming a deposition film on the substrate, the holding member is held through the holder.
It is placed in a cooling vessel together with the substrate on which the deposited film is formed, and then the plurality of substrates on which the deposited film is formed are placed in the holder.
After removing et al., The holding member is disposed playback vessel with the holder to form an etching space, the edge of the ClF ₃ gas in a state of arranging the holding member to the regeneration vessel
A method of forming a deposited film, comprising dry-etching a deposit introduced into the holding space and deposited on the holding member and the holder . 7. The deposited film forming method according to claim 6, wherein the dry etching is performed without disassembling the holding member into components constituting the holding member.