JP3134411B2 - Dimensional modulation electronic device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dimensionally modulated electronic device in which the dimension of an electron channel is modulated by controlling a potential.

[0002]

2. Description of the Related Art Advances in microfabrication technology have made it possible to process semiconductors and metals with a size on the order of quantum mechanical wavelengths. With the emergence of discrete levels, the possibility of various functional devices utilizing the quantum effect is being pursued.

[0003] Among devices known as such functional devices utilizing the quantum effect, there are a quantum wire structure and a quantum box (quantum dot). A quantum wire is a device structure that traps electrons in a fine linear region where a quantum effect occurs and uses the behavior of the electrons. A quantum box has a structure that three-dimensionally confines electrons.

As a device using a structure for two-dimensionally confining electrons, a HEMT (high electron mobility transistor) using a two-dimensional electron gas layer (2DEG) formed on a heterojunction surface is already widely known. Have been.

[0005]

Conventionally, such 0
One-dimensional quantum boxes, one-dimensional quantum wires, two-dimensional two-dimensional electron gas layers, and the like are structurally produced, and an element that has been structurally completed once is used as it is.

A structure in which a grit-like gate electrode is formed on a two-dimensional electron gas layer and the bias of the gate electrode is changed to switch between the state of the two-dimensional electron gas and the state of the zero-dimensional quantum dot is known. (For example, "The
7th International Worksh
op on Future Electron Dev
ices, Superlatice and Qua
ntum Functional Devices, O
ct. 2-4, 1989, Toba, Japan ", Dissertation, pp. 95-100. ).

However, the confinement structure of the electron is
If it is possible to modulate from dimension (quantum box) to one dimension (quantum wire) and two dimensions, its application range will be extremely wide.

Accordingly, the present invention sets the dimension of electron confinement to zero.
It is an object of the present invention to provide a novel dimensional modulation electronic device which can be controlled by modulating between one-dimensional, one-dimensional and two-dimensional.

[0009]

In order to solve the above-mentioned problems, a dimensional modulation electronic device according to the present invention has a two-dimensional electron gas layer and a parallel and formed two-dimensional electron gas layer formed on one surface of the two-dimensional electron gas layer. First potential control means for controlling the potential of the two-dimensional electron gas layer in a plurality of lines; and a parallel potential formed on the other surface of the two-dimensional electron gas layer and different from the first potential control means. Second potential control means for controlling the potential of the two-dimensional electron gas layer in a plurality of lines, wherein the potential of the two-dimensional electron gas layer is dimensionally controlled by the first and second potential control means. It is characterized by being modulated. here,
The longitudinal direction of the first potential control means and the second
In this case, zero-dimensional, one-dimensional, and two-dimensional dimensional modulation can be performed. In addition, the longitudinal direction of the first potential control means and the longitudinal direction of the second potential control means may be the same direction. In this case, one-dimensional and two-dimensional modulation can be performed. It is.

In this dimensionally modulated electronic device, the interval between the linear potentials controlled by the potential control means may be as large as the electron wavelength at which the quantum effect appears, or as large as the quantum effect is not remarkable. It may be. Each potential control means confines electrons in parallel thin lines using, for example, a pn junction, a Schottky junction, or a compound semiconductor heterojunction. The potential control by the potential control means is realized by supplying a control voltage or the like. The control directions of the linearly controlled potentials of the first potential control means and the second potential control means are different directions. However, even if they are set to the same direction, only the 0-dimension can be obtained, and the one-dimensional control is not possible. Two-dimensional dimensional modulation is possible. Further, the two-dimensional electron gas layer may have a superlattice structure.

In the dimensionally modulated electronic element,
At least two pairs of electrodes can be connected to the two-dimensional electron gas layer. In this case, one of the first and second potential control means is capable of blocking one pair between the two pairs of electrodes, and the other of the first and second potential control means is capable of cutting off the pair of electrodes. The potential of the two-dimensional electron gas layer is controlled so that the other pair of the two can be cut off.

[0012]

According to the dimensional modulation electronic device of the present invention, the first or second
When one of the potential control means controls the potential of the two-dimensional electron gas layer, a plurality of parallel one-dimensional structures (quantum wire structures) are obtained according to the controlled linear potential. Further, when the potential of the two-dimensional electron gas layer is simultaneously controlled from both the first and second potential control means in different potential control directions, the first potential control means and the second potential control means extend the potential in the extending direction. Therefore, a lattice of a potential barrier is formed in the two-dimensional electron gas layer. Therefore, in the two-dimensional electron gas layer, each potential well independently has a zero-dimensional structure (quantum box, quantum dot structure). When both the first and second potential control means do not control the potential, the two-dimensional electron gas layer functions as it is, and operates as a two-dimensional structure in which electrons are confined in a planar region.

In a dimensional modulation electronic device having a structure in which at least two pairs of electrodes are connected to a two-dimensional electron gas layer, the first and the second
The conduction / non-conduction between the electrodes is controlled according to the potential control by the potential control means. When the potential of the two-dimensional electron gas layer is simultaneously controlled from both the first and second potential control means, the two pairs of electrodes are all non-conductive. Conversely, when the potential of the two-dimensional electron gas layer is not controlled at all, , The two pairs of electrodes are all conducting. When the potential is controlled by only one of the first and second potential control means, only one pair of electrodes conducts.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described with reference to the drawings.

[First Embodiment] This embodiment is an example of a dimensionally modulated electronic device in which a two-dimensional electron gas layer is formed using a GaAs layer as a compound semiconductor layer, and has a laminated structure shown in FIG.

As shown in FIG. 1, the dimensionally modulated electronic device 1 of this embodiment has three main layers. First, the intermediate layer is the two-dimensional electron gas layer 2 and is composed of an n-type GaAs layer. Electrons are confined in the two-dimensional electron gas layer 2 in a plane unless the potential is controlled by potential control means described below.

On the two-dimensional electron gas layer 2, an AlGaAs layer 3 is laminated. At the interface 7 between the AlGaAs layer 3 and the two-dimensional electron gas layer 2, a plurality of p-type GaAs lines 5 arranged in parallel with each other at a periodic interval x ₁ with the Y direction in the figure as a longitudinal direction. 7 two-dimensional electron gas layer 2
Formed on the side. The p-type GaAs line 5 is a wiring functioning as first potential control means, and the potential of the two-dimensional electron gas layer 2 changes by changing the voltage supplied to the p-type GaAs line 5.

AlGaAs is also provided below the two-dimensional electron gas layer 2.
The s layer 4 is laminated. At the interface 8 between the AlGaAs layer 3 and the two-dimensional electron gas layer 2, a plurality of p-type GaAs lines 6 whose longitudinal direction is the X direction in the figure are formed. This p-type GaAs
s line 6 is formed in a two-dimensional electron gas layer 2 side of the interface 8, a plurality of wires arranged parallel to each other with a periodic spacing y _1. The p-type GaAs line 6 is a second potential control means, and changes the voltage supplied to the p-type GaAs line 6 to change the voltage of the two-dimensional electron gas layer 2 like the p-type GaAs line 5. The potential changes.

Here, the p-type GaAs line 5 and the p-type GaAs
The lines 6 cross each other at right angles on the plane as shown in FIG. Therefore, in plan view, the p-type GaAs line 5 and p-type GaAs line 5
The GaAs line 6 forms a lattice,
The size of the cell surrounded by each grid is x ₁ × y ₁ , and the cells are arranged in a matrix. In this embodiment, the distances x _{1 and} y ₁ are both dimensions at which a quantum effect is generated, and are about the size of an electron wavelength. Thus, the cell is about the size of a quantum box.

FIG. 3 is a perspective view showing the dimensionally modulated electronic element 1 of this embodiment separately, excluding the uppermost AlGaAs layer 3. As shown in FIG. 3, two-dimensional electron gas layer 2 made of n-type GaAs layer of the intermediate separates the amount corresponding p-type GaAs lines 5 and p-type GaAs beam 6 having a thickness z ₁ in the Z direction.

FIG. 4 is a diagram showing an example of a method of feeding power to the dimensionally modulated electronic element 1 of this embodiment. Wiring layers 9 and 10 are provided like a lead frame for a semiconductor chip. The wiring layer 9 is a wiring pattern connected to the p-type GaAs line 5 and connected to an external terminal. Each wiring layer 9 is continuous with the p-type GaAs lines 5 arranged at a minute interval x ₁ at the end of the region of the two-dimensional electron gas layer 2, and has such a shape that the line width of the pattern is widened therefrom. . Each wiring layer 9 corresponds to each p-type GaAs line 5 one-to-one, but a structure in which a plurality of p-type GaAs lines 5 are collectively connected to the wiring layer 9 is also possible. The wiring layer 10 is a wiring pattern connected to the p-type GaAs line 6. Like the wiring layer 9, the end of the region of the two-dimensional electron gas layer 2 is formed on the p-type GaAs line 6 arranged at minute intervals y _1. And connect to the external terminal with a pattern extending from there. This wiring layer 10 is also a p-type G
The p-type GaAs corresponds to the aAs line 6 one by one.
It is also possible to adopt a structure in which the wires 6 are collectively connected to the wiring layer 10.

The dimensionally modulated electronic device 1 of this embodiment having such a structure operates as follows.

First, the two-dimensional electron gas layer 2 is made of n-GaAs.
The s layer is sandwiched between the AlGaAs layers 3 and 4.
Since the AlGaAs layers 3 and 4 have a wider bandgap than the GaAs layer, the two-dimensional electron gas layer 2 is composed of the AlGaAs layers 3 and 4.
Potential well.

The p-type GaAs lines 5 and 6 formed at the interfaces 7 and 8 are in contact with the surrounding n-type GaAs layers by pn junctions. At this pn junction, a depletion layer is generated. When a voltage is supplied to the p-type GaAs lines 5 and 6, the size of the depletion layer changes, and the p-type GaAs lines 5 and 6 change.
When the voltage supplied to 6 is increased, the depletion layer becomes large.

First, when the voltage supplied to the p-type GaAs line 6 is increased and the voltage supplied to the p-type GaAs line 5 is not increased, the potential of the two-dimensional electron gas layer 2 is increased by the expansion of the depletion layer. The barrier becomes higher in a ridge shape along the p-type GaAs lines 6 arranged in the X direction as a longitudinal direction.
That is, the potential barrier is high immediately above the p-type GaAs line 6, and the high potential barrier continues in the X direction. Conversely, in a region between the pair of p-type GaAs lines 6 and 6, a relative potential well is formed, and this potential well is also continuous in the X direction. FIG.
Is a diagram schematically showing a potential in a cross section perpendicular to the X direction, and a dotted line Ψ is a potential curve. The existence probability of electrons increases in a region between the pair of p-type GaAs lines 6 and 6 and extremely decreases in a portion immediately above the p-type GaAs line 6. After all, this way, by increasing the voltage of the p-type GaAs line 6, successively in the X direction, and each separated quantum wire structure at intervals of period y ₁ in the Y direction (one-dimensional structure) obtained Will be done.

Next, when the voltage supplied to the p-type GaAs line 5 is increased and the voltage supplied to the p-type GaAs line 6 is not increased, the potential of the two-dimensional electron gas layer 2 is such that the longitudinal direction is in the Y direction. Ridge shape. In this case,
Since the p-type GaAs lines 5 extend parallel to the Y-direction, the potential barriers are continuously increased in the Y-direction along the respective p-type GaAs lines 5, and the potential barrier and the potential well are formed in the X-direction. It will be the repeated with a period of the distance x _1. Therefore, by increasing the voltage of the p-type GaAs line 5, it is possible to continue in the Y direction and
In the direction, a quantum wire structure (one-dimensional structure) separated at intervals of a period x ₁ is obtained, which is different from the case where the p-type GaAs line 6 is set to a high voltage by 90 degrees. It becomes a quantum wire structure.

Subsequently, the p-type GaAs line 5 and the p-type GaAs
When both lines 6 are simultaneously set to a high voltage, p-type GaAs
The potential barrier increases along both the s-line 5 and the p-type GaAs line 6, and a lattice-like potential barrier appears in the two-dimensional electron gas layer 2. Therefore, electrons are p-type GaAs
The movement is allowed only in a portion between the line 5 and the lattice of the p-type GaAs line 6, and the quantum box array (0
(Dimensional structure) is obtained.

Finally, the p-type GaAs line 5 and the p-type GaAs
When both lines 6 are not simultaneously set to the high voltage, the two-dimensional electron gas layer 2 controls the potential of each p-type GaAs
Since it does not receive from the s-lines 5 and 6, it becomes a region where electrons can move in a plane.

As described above, in the dimensional modulation electronic device of the present embodiment, the modulation from the 0-dimensional structure to the 2-dimensional structure is p-type G
It is variable by the voltage supplied to the aAs lines 5 and 6. Therefore, applications from quantum box structures to applications using two-dimensional electron gas layers as well as quantum wire structures are possible.
One element can be used as an extremely multifunctional element.

In this embodiment, the p-type GaAs line 5,
Although the potential control means is constituted by 6, two sets of a plurality of parallel Schottky electrode lines or the like may be formed at the interface of the two-dimensional electron gas layer 2. Further, a structure in which a plurality of two-dimensional electron gas layers are stacked to form potential control means may be employed.

[Second Embodiment] This embodiment is a modification of the first embodiment, and is an example in which p-type GaAs lines having a pattern that does not intersect at right angles on a plane are formed.

FIG. 6 shows the structure. At the interface 17 of the two-dimensional electron gas layer 12 made of an n-type GaAs layer, a space v ₁
, The p-type GaAs line 15 is formed in parallel. The longitudinal direction of each GaAs line 15 is the U direction in the figure. Further, the interface 18 of the two-dimensional electron gas layer 12, p-type GaAs lines 16 are formed in parallel with a spacing y _1. The longitudinal direction of these p-type GaAs lines 16 is the X direction in the figure. The interface 18 of the two-dimensional electron gas layer 12 has Al
The GaAs layer 14 is joined, and the interface 17
The GaAs layer is joined.

The structure of the present embodiment differs from that of the first embodiment in that the longitudinal direction of the p-type GaAs line 15 is not perpendicular to the longitudinal direction of the p-type GaAs line 16. That is, the U direction in the drawing has an angle θ (θ ≠ π / 2) with respect to the X direction in the UX plane. As a result, the potential of the p-type GaAs line 15 and the p-type GaAs line 16 causes The arrangement of the quantum boxes formed as a result of the control is a parallelogram arrangement.

The two sets of p-type GaAs lines 15 and 16 that intersect at an angle that does not intersect at right angles on a plane also
Similar to the first embodiment, 0-dimensional, 1-dimensional, and 2-dimensional dimensional modulation is possible, and various applications are possible.

[Third Embodiment] In the dimensionally modulated electronic device of this embodiment, the layers sandwiching the two-dimensional electron gas layer are constituted by p-type GaAs layers, and the pitch of the potential control means is set to the size at which the quantum effect occurs. It is a larger one.

FIG. 7 shows the structure of the dimensional modulation electronic device of this embodiment. An n-type GaAs layer 22 is stacked on the p-type GaAs layer 21, and a p-type GaAs layer 23 is stacked on the n-type GaAs layer 22. The n-type GaAs layer 22 functions as a two-dimensional electron gas layer. Then, the n-type GaAs layer 22
The interface 24 between the p-type GaAs layer 21 and the
Parallel p-type GaAs protruding toward the p-type GaAs layer 22
The s-line 25 is formed, and the n-type GaAs layer 22 and the p-type GaAs
At the interface 26 of the s layer 23, a plurality of parallel p-type GaAs lines 27 projecting from the interface 26 toward the n-type GaAs layer 22 are formed.

The p-type GaAs lines 25 and 27 have n
It functions as potential control means of the type GaAs layer 22. That is, by supplying a high voltage, n-type GaAs
The potential of the layer 22 is changed to one having a plurality of linear potential wells. The longitudinal direction of the p-type GaAs line 25 is the X direction in the figure. The p-type GaAs line 27 is Y
The direction is the longitudinal direction. Therefore, when a high voltage is biased on the p-type GaAs line 25, a continuous ridge-like potential is formed in the X direction, and when a high voltage is biased on the p-type GaAs line 27, a continuous ridge-like potential is formed in the Y direction. Is done. In this embodiment, p-type GaAs
The distance y ₂ between the lines 25 and the distance x ₂ between the p-type GaAs lines 27 are
In particular, although the size is not about the quantum mechanical wavelength of electrons that generate the quantum effect, the 0-dimensional, 1-dimensional, and 2-dimensional electron channel structures can be obtained by controlling the potential of the 2-dimensional electron gas layer. become.

In this embodiment, the same GaAs is used as a whole.
Since it is made of s, it has an advantage that a single GaAs can be easily grown by epitaxial growth and using ion implantation or the like.

[Fourth Embodiment] This embodiment is an example of a switching element type dimensional modulation electronic element functioning as a switching element, in which two pairs of electrodes are connected to a two-dimensional electron gas layer.

FIG. 8 shows a schematic structure thereof. In the dimensionally modulated electronic element of the present embodiment, a pair of p-type GaAs layers
2, 33 are provided. A p-type GaAs line 35 is formed at an interface 34 between the p-type GaAs layer 32 and the two-dimensional electron gas layer 31, and a p-type GaAs line 37 is formed at an interface 36 between the p-type GaAs layer 33 and the two-dimensional electron gas layer 31. It is formed. The p-type GaAs lines 35 and 37 are wiring layers that are parallel to each other and are separated from each other. The p-type GaAs line 35 has a longitudinal direction in the Y direction in the figure, and the p-type GaAs line 37 has a longitudinal direction in the X direction in the figure. Direction. These p-type GaAs lines 35,
37 are formed so as to be orthogonal on a plane, but are separated within the thickness of the two-dimensional electron gas layer 31.

A gate electrode (G ₁ ) 38 is connected to an end of the p-type GaAs line 37 as an electrode common to each of the p-type GaAs lines 37, and a gate electrode (G ₁ ) is connected to an end of the p-type GaAs line 35. G ₂ ) 39 is connected to each p-type GaAs line 35 as a common electrode. Therefore, by supplying a voltage to the gate electrodes 38 and 39, the potential of the two-dimensional electron gas layer 31 is controlled. For example, when a high voltage is supplied only to the gate electrode 38, the potential barrier spreads in the two-dimensional electron gas layer 31 along the p-type GaAs line 37, so that a plurality of one-dimensional fine line structures having the X direction as the longitudinal direction are formed. can get. Further, when a high voltage is supplied only to the gate electrode 39, the potential barrier extends in the two-dimensional electron gas layer 31 along the p-type GaAs line 35, so that a plurality of one-dimensional fine wire structures having the Y direction as a longitudinal direction are formed. Is obtained.
When a high voltage is supplied to both the gate electrodes 38 and 39, the potential barrier extends in a grid pattern, and the channels of the two-dimensional electron gas layer 31 are divided in a matrix pattern.

The two-dimensional electron gas layer 31 whose potential is thus controlled is connected to two pairs of electrodes. One pair of the electrodes 40 and 41 is arranged straight away in the X direction, and the other pair of electrodes 42 and 43 is arranged straight away in the Y direction. Further, the electrodes 40 to 43 are formed so as to be separated from each other and penetrate the p-type GaAs layer 32. For example, if each of the electrodes 40 to 43 is made of an alloy of an n-type impurity and a metal, the p-type GaAs layer 32
And is electrically insulated.

FIG. 9 is a schematic plan view of the dimensionally modulated electronic device of this embodiment. The electrodes 40 and 43 are S _{1 and} S ₂ , the electrodes 41 and 42 are D _{1 and} D ₂ , and the gate electrode 3
Assuming that _8, 39 are G _{1 and} G ₂ , the dimensionally modulated electronic device of this embodiment operates as follows according to the voltages of the gate electrodes G _{1 and} G ₂ .

[0044]

[Table 1]

The reason for this operation is that the high voltage (H)
The direction intersecting with the has been a direction in which the gate electrode extends, is because the electrons in the channel is not formed, the gate G ₁ is cut off conduction in the Y direction at high voltage, the gate G
Reference numeral ₂ is for cutting off conduction in the X direction at a high voltage. When the gates G _{1 and} G ₂ are both at a low voltage, the two-dimensional electron gas layer 3
By 1, the connection between all the electrodes is established.

The dimensional modulation electronic device of this embodiment having such a switching function can perform various switching operations. For example, when compared with the case where two normal FETs are formed, when a high voltage is applied to the two gates, this embodiment is greatly different in that all the electrodes conduct.

In this embodiment, the p-type GaAs lines 35, 3
Although the interval of 7 is not the size that causes the quantum effect, the interval can be made as small as the electron wavelength to form a quantum wire structure. Further, in the off state, it is not necessary to discard carriers in the channel region, and the two-dimensional electron gas layer can be left as a channel layer, so that high-speed operation can be expected.

Fifth Embodiment This embodiment is a modification of the fourth embodiment, and is an example of a switching element type dimensional modulation electronic device having three pairs of electrodes.

FIG. 10 shows a planar structure of the dimensionally modulated electronic element 50. Although a specific illustration is omitted mainly because the number of electrode pairs is different from that of the fourth embodiment, a potential control means connected to the gate G1 is provided at _one interface sandwiching the two-dimensional electron gas layer. is formed, connected potential control means are formed on the gate G ₂ and the gate G ₃ on the other interface. The gate G ₁ cuts off the channel in the Y direction of the two-dimensional electron gas layer at a high voltage, and the gate G ₂ and the gate G
₃ shuts off the channel in the X direction of the two-dimensional electron gas layer at a high voltage. The gate G ₂ and the gate G ₃ are provided in parallel side by side in the X direction, can block channels of different regions.

In the dimensionally modulated electronic element 50, three pairs of electrodes S _{1 to} S ₃ and D _{1 to} D ₃ are arranged separately from each other, and formed so as to be individually connected to the two-dimensional electron gas layer. ing. Gates G ₂ and G ₃ are formed between the pair of electrodes S _{1 and} D _{1 so} as to be able to shut off, and the gate G ₁ does not shut off between the electrodes S _{1 and} D ₁ . Between the other pair of electrodes S ₂ and D ₂ , a gate G ₁ is formed so as to be shut off, and the gates G ₂ and G _2
3 does not contribute to the interruption of conduction between the electrodes. Further among other pair of electrodes S _3, D _3, the gate G ₁ is blocked can be formed, the gate G _2, G ₃ does not contribute to conduction cut-off between the electrodes.

The dimensional modulation electronic device 50 of the present embodiment provided with the electrodes S _{1 to} S ₃ and D _{1 to} D ₃ operates as follows.

[0052]

[Table 2]

As shown in Table 2, in the dimensional modulation electronic device of this embodiment, various switching operations are realized.
Particularly in the case where the gate G ₁ is not controlling the potential to block the conduction between electrodes, it is possible conduction between the three electrodes and between all electrodes. Further, since a two-dimensional electron gas layer is used, high-speed switching is realized.

In addition to the fourth and fifth embodiments, by changing the arrangement of the electrodes and the arrangement of the gates, it can function as various gate circuits and logic circuits.

[0055]

The two-dimensional electron gas layer is sandwiched between the two-dimensional electron gas layers and the two-dimensional electron gas is formed into a fine line structure from the potential thereof by using the first and second different potential control means. If the control direction of the potential controlled linearly by the potential control means is set to a different direction, dimensional modulation becomes possible between the 0-dimensional dot structure, the one-dimensional fine line structure, and the two-dimensional electron gas structure. In this case, it is not only possible to reduce the dimensions to zero, but one-dimensional and two-dimensional modulation are possible. As a result of the dimensional modulation,
It is realized that one device performs various functions. In particular, in the case of a size that produces a quantum effect, a quantum wire or a two-dimensional electron gas structure can be changed from the quantum box by external control, and a multifunctional device can be obtained.

Further, in a switching element type dimensional modulation electronic device in which two or more pairs of electrodes are connected to a two-dimensional electron gas layer, various switching operations are realized.
Fast switching is also performed.

[Brief description of the drawings]

FIG. 1 is a perspective view of a main part of a dimensional modulation electronic device according to a first embodiment of the present invention.

FIG. 2 is a plan view of a main part of the dimensional modulation electronic device according to the first embodiment of the present invention.

FIG. 3 shows a second example of the dimensional modulation electronic device according to the first embodiment of the present invention.
It is a perspective view which decomposes | disassembles and shows the periphery of a three-dimensional electron gas layer.

FIG. 4 is a plan view for explaining a power supply method of the dimensional modulation electronic device according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view schematically showing control of the potential of the dimensional modulation electronic device according to the first embodiment of the present invention.

FIG. 6 is a perspective view of a main part of a dimensional modulation electronic device according to a second embodiment of the present invention.

FIG. 7 is a perspective view of a main part of a dimensional modulation electronic device according to a third embodiment of the present invention.

FIG. 8 is a perspective view of a switching element type dimensional modulation electronic device according to a fourth embodiment of the present invention.

FIG. 9 is a plan view showing an electrode arrangement of a dimensional modulation electronic device according to a fourth embodiment of the present invention.

FIG. 10 is a plan view showing an electrode arrangement of a dimensional modulation electronic device according to a fifth embodiment of the present invention.

[Explanation of symbols]

 1,50 ... dimensional modulation electronic element 2,12,31 ... two-dimensional electron gas layer 3,4 ... AlGaAs layer 5,6,15,16,25,27 ... p-type GaAs line 7,8,171,18 ... interface 21, 23, 32, 33 ... p-type GaAs layer 22 ... n-type GaAs layer 38, 39 ... gate electrode 40-43 ... electrode

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ identification code FI H01L 29/812 (58) Investigated field (Int.Cl. ⁷ , DB name) H01L 29/80 H01L 21/338 H01L 29/201 H01L 29/66 H01L 29/778 H01L 29/812

Claims (3)

(57) [Claims] 1. A two-dimensional electron gas layer and a first potential control capable of controlling a potential of the two-dimensional electron gas layer in a plurality of parallel lines formed on one surface of the two-dimensional electron gas layer. Means, and a second potential control formed on the other surface of the two-dimensional electron gas layer and capable of controlling the potential of the two-dimensional electron gas layer in a plurality of parallel lines different from the first potential control means. Means, a longitudinal direction of the first potential control means, and
Direction different from the longitudinal direction of the second potential control means
And is, the two-dimensional electron potential of the gas layer is the first and second dimension modulating electronic device characterized by being dimensions modulated by the potential control means. 2. A two-dimensional electron gas layer and the two-dimensional electron gas layer.
A plurality of parallel lines formed on one surface of the secondary layer.
The first point that makes the potential of the source electron gas layer controllable
Tension control means and the other of the two-dimensional electron gas layer
Formed on the surface and different from the first potential control means
Potential of the two-dimensional electron gas layer in a plurality of parallel lines
Potential control means for controlling the
And the longitudinal direction of the first potential control means and
The same as the longitudinal direction of the second potential control means
And the potential of the two-dimensional electron gas layer is equal to the first potential.
And one-dimensional and quadratic by the second potential control means.
Dimensionally modulated electrons characterized by the original dimensional modulation
element. 3. The dimensional modulation electronic device according to claim 1 , wherein at least two pairs of electrodes are connected to said two-dimensional electron gas layer, and said first and second potential control means are provided. One so that one pair between the two pairs of electrodes can be cut off, and the other of the first and second potential control means can cut off the other pair between the two pairs of electrodes, respectively. A dimensionally modulated electronic device, wherein a potential of the two-dimensional electron gas layer is controlled.