JP3147602B2 - Pb alloy solder for semiconductor device assembly with excellent high temperature strength - Google Patents
Pb alloy solder for semiconductor device assembly with excellent high temperature strengthInfo
- Publication number
- JP3147602B2 JP3147602B2 JP20661893A JP20661893A JP3147602B2 JP 3147602 B2 JP3147602 B2 JP 3147602B2 JP 20661893 A JP20661893 A JP 20661893A JP 20661893 A JP20661893 A JP 20661893A JP 3147602 B2 JP3147602 B2 JP 3147602B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature strength
- alloy
- alloy solder
- excellent high
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
Landscapes
- Die Bonding (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体装置組立用に使
用される高融点(260〜400℃)を有する高温強度に優れ
たPb合金はんだ材に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Pb alloy solder having a high melting point (260-400.degree. C.) and excellent high-temperature strength used for assembling semiconductor devices.
【0002】[0002]
【従来の技術】従来、半導体素子(Si)のダイボンデ
ング、フリップチップポンディングおよびICパッケー
ジ封止等半導体装置組立用に使用される高融点(260〜4
00℃)の高温はんだ材としては、Pb−Sn合金、Pb
−Ag合金、Pb−Sn−Ag合金及びPb−In合金
などのPb合金が知られていた。2. Description of the Related Art Conventionally, high melting points (260 to 4) used for assembling semiconductor devices such as die bonding, flip chip bonding and IC package sealing of semiconductor elements (Si).
Pb-Sn alloy, Pb
Pb alloys such as -Ag alloy, Pb-Sn-Ag alloy and Pb-In alloy have been known.
【0003】[0003]
【発明が解決しようとする課題】一方、近年の半導体装
置の高集積化は著しく、これに伴い半導体装置の発熱も
高くなり、これを構成するはんだ付け部も、高温環境下
に置かれる状況にあるが、上記の従来Pb合金はんだ材
は、その使用環境が100℃程度にもなると、高温強度が
十分でないため、ろう付け部が破断し易くなるなどの問
題点がある。On the other hand, high integration of semiconductor devices in recent years is remarkable, and accordingly, heat generation of the semiconductor devices is also increased, and the soldering portions constituting the semiconductor devices are also placed in a high temperature environment. However, the above-mentioned conventional Pb alloy solder material has a problem that, when the use environment is about 100 ° C., the high-temperature strength is not sufficient, and the brazed portion is easily broken.
【0004】[0004]
【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、特に半導体装置の高集積化組立
に用いることができるPb合金はんだ材を開発すべく研
究を行なった結果、はんだ材を重量%で(以下%は重量
%を示す)、Pd:3〜12%、を含有し、残りがPb
と不可避不純物からなるPb合金で構成すると、この結
果のPb合金はんだ材は、優れた高温強度を持つことか
ら、これを高い発熱を伴う高集積半導体装置の組立に用
いた場合、その実用に際してもはんだ付け部は優れた高
温強度を示し、破断の発生が見られないという研究結果
を得たのである。Means for Solving the Problems Accordingly, the present inventors have
In view of the above, research was conducted to develop a Pb alloy solder material that can be used particularly for highly integrated assembly of semiconductor devices. As a result, the solder material is expressed in terms of% by weight (hereinafter,% indicates% by weight). Pd: 3 to 12%, the remainder being Pb
And a Pb alloy composed of unavoidable impurities, the resulting Pb alloy solder material has excellent high-temperature strength. Therefore, when this is used for assembling a highly integrated semiconductor device with high heat generation, it can be used for practical use. The research results showed that the soldered part exhibited excellent high-temperature strength and no breakage was observed.
【0005】この発明は、上記の研究結果に基づいてな
されたものであって、Pd:3〜12%、を含有し、残
りがPbと不可避不純物からなる、組成を有するPb合
金で構成してなる半導体装置組立用Pb合金はんだ材に
特徴を有するものである。The present invention has been made on the basis of the above research results, and comprises a Pb alloy having a composition containing Pd: 3 to 12% and the balance consisting of Pb and unavoidable impurities. Is characterized by the following Pb alloy solder material for assembling semiconductor devices.
【0006】なお、この発明のPb合金はんだ材を構成
するPb合金において、合金成分である。Pdの含有量
を3〜12%としたのは、その含有量が3%未満では、所
望の高温強度を確保することができず、一方その含有量
が12%を越えると融点が高くなりすぎ、はんだ付けが
困難になることから、その含有量を3〜12%と定め
た。In the Pb alloy constituting the Pb alloy solder material of the present invention, it is an alloy component. The reason why the content of Pd is set to 3 to 12% is that if the content is less than 3%, the desired high-temperature strength cannot be ensured, while if the content exceeds 12%, the melting point becomes too high. Since the soldering becomes difficult, the content is set to 3 to 12%.
【0007】[0007]
【実施例】つぎに、この発明のPb合金はんだ材を実施
例により具体的に説明する。 通常の高周波溶解炉に
て、それぞれ表1に示される成分組成をもったPb合金
溶湯を調製し、直径:50mm×長さ: 150mmのインゴット
に鋳造し、このインゴットを幅:30mm×厚さ:3mmに冷
間で押し出し、これを冷間圧延して厚さ:70μmを有す
る本発明Pb合金はんだ材1〜4、および従来Pb合金
はんだ材1〜5をそれぞれ製造した。つぎに、この結果
得られた各種のPb合金はんだについて、高温強度を評
価するために、以下の条件で高温剪断試験を行なった。
すなわち、上記Pb合金はんだ材より、20mm×20mmの寸
法をもって試験片を切り出し、幅:20mm×厚さ:10mm×
長さ:100mmの寸法をもった2枚のNi板材のそれぞれ
の端部を前記試験片を間にして20mmの重ね代で重ね合わ
せ、0.2MPaの荷重をかけながら窒素雰囲気のリフロ
ー炉で、各はんだ材の融点+80℃で3分間加熱してはん
だ付けを行った。このはんだ付け体について、150℃
で、引張り速度10mm/minで剪断試験を行ない、剪断強
度を測定した。この試験結果を5個の平均値とした。Next, the Pb alloy solder material of the present invention will be specifically described with reference to examples. In a normal high-frequency melting furnace, a Pb alloy melt having the component composition shown in Table 1 was prepared and cast into an ingot of diameter: 50 mm × length: 150 mm, and the ingot was width: 30 mm × thickness: It was cold-extruded to 3 mm and cold-rolled to produce Pb alloy solder materials 1 to 4 of the present invention having a thickness of 70 μm and conventional Pb alloy solder materials 1 to 5 respectively. Next, the various Pb alloy solders obtained as a result were subjected to a high-temperature shear test under the following conditions in order to evaluate the high-temperature strength.
That is, a test piece having a size of 20 mm × 20 mm was cut out from the above Pb alloy solder material, and the width: 20 mm × thickness: 10 mm ×
Length: Each end of two Ni plates having dimensions of 100 mm is overlapped with a 20 mm overlap allowance with the test piece in between, and each is subjected to a reflow furnace in a nitrogen atmosphere while applying a load of 0.2 MPa. Soldering was performed by heating at the melting point of the solder material + 80 ° C for 3 minutes. About 150 ℃
A shear test was conducted at a tensile speed of 10 mm / min to measure the shear strength. The test results were taken as the average value of the five samples.
【0008】[0008]
【表1】 [Table 1]
【0009】[0009]
【発明の効果】表1に示される結果から、本発明はんだ
材1〜4は、これを用いて形成されたはんだ付け部が、
従来はんだ材1〜5を用いて形成されたはんだ付け部に
比して、優れた高温強度をもつことが明らかである。上
述のように、この発明のPb合金はんだ材は、優れた高
温強度を有するので、これを特に高温発熱を伴う高集積
半導体装置の組立に用いた場合にも、実用に際して、ろ
う付け部が破断することがなく、長期に亘って、高い信
頼性を確保することができるのである。According to the results shown in Table 1, the solder materials 1 to 4 of the present invention have the following advantages.
It is evident that it has superior high-temperature strength as compared with soldered portions formed using conventional solder materials 1 to 5. As described above, the Pb alloy solder material of the present invention has excellent high-temperature strength. Therefore, even when the Pb alloy solder material is used for assembling a highly integrated semiconductor device which generates heat at a high temperature, the brazed portion is broken in practical use. Therefore, high reliability can be ensured for a long period of time.
Claims (1)
残りがPbと不可避不純物からなる組成を有することを
特徴とする高温強度に優れた半導体装置組立用Pb合金
はんだ材。(1) containing, by weight%, Pd: 3 to 12%;
A Pb alloy solder material for assembling semiconductor devices having excellent high-temperature strength, the balance being composed of Pb and unavoidable impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20661893A JP3147602B2 (en) | 1993-08-20 | 1993-08-20 | Pb alloy solder for semiconductor device assembly with excellent high temperature strength |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20661893A JP3147602B2 (en) | 1993-08-20 | 1993-08-20 | Pb alloy solder for semiconductor device assembly with excellent high temperature strength |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0751885A JPH0751885A (en) | 1995-02-28 |
| JP3147602B2 true JP3147602B2 (en) | 2001-03-19 |
Family
ID=16526363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20661893A Expired - Fee Related JP3147602B2 (en) | 1993-08-20 | 1993-08-20 | Pb alloy solder for semiconductor device assembly with excellent high temperature strength |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3147602B2 (en) |
-
1993
- 1993-08-20 JP JP20661893A patent/JP3147602B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0751885A (en) | 1995-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20001212 |
|
| LAPS | Cancellation because of no payment of annual fees |