JP3149249B2 - AC type plasma display panel and method of manufacturing the same - Google Patents
AC type plasma display panel and method of manufacturing the sameInfo
- Publication number
- JP3149249B2 JP3149249B2 JP3785592A JP3785592A JP3149249B2 JP 3149249 B2 JP3149249 B2 JP 3149249B2 JP 3785592 A JP3785592 A JP 3785592A JP 3785592 A JP3785592 A JP 3785592A JP 3149249 B2 JP3149249 B2 JP 3149249B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnesium oxide
- discharge
- dielectric layer
- pdp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Gas-Filled Discharge Tubes (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、AC型のプラズマディ
スプレイパネル(PDP)の製造方法に関し、特に誘電
体層の保護膜の形成方法に特徴を有する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an AC type plasma display panel (PDP ) , and particularly to a method for forming a protective film for a dielectric layer.
【0002】AC型PDPでは、放電のための一対の電
極が低融点ガラスなどの誘電体層で被覆され、さらにそ
の表面に誘電体層を放電時のイオン衝撃から保護するた
めの耐熱性の保護膜が設けられている。In an AC type PDP, a pair of electrodes for discharge are covered with a dielectric layer such as a low-melting glass, and a heat-resistant protection is provided on the surface to protect the dielectric layer from ion bombardment during discharge. A membrane is provided.
【0003】保護膜は放電空間に接することから放電特
性に大きな影響を与える。それ故、保護膜の改良は、表
示の安定化、駆動の容易化、及び長寿命化などの上で重
要な事項の1つとされている。[0003] Since the protective film is in contact with the discharge space, it greatly affects the discharge characteristics. Therefore, improvement of the protective film is regarded as one of important matters for stabilizing display, facilitating driving, and extending the life.
【0004】[0004]
【従来の技術】一般に、PDPにおいては、誘電体層の
保護膜として、酸化マグネシウム(MgO)からなる数
千Å程度の厚さの薄膜が設けられている。2. Description of the Related Art In general, a PDP is provided with a thin film having a thickness of about several thousand of magnesium oxide (MgO) as a protective film for a dielectric layer.
【0005】酸化マグネシウムは、二次電子放出係数の
大きい金属酸化物であり、これを用いることにより、放
電開始電圧が下がることから駆動の容易化を図ることが
できる。[0005] Magnesium oxide is a metal oxide having a large secondary electron emission coefficient, and by using this, the firing voltage can be reduced, so that driving can be facilitated.
【0006】このような酸化マグネシウム膜は、膜材料
を例えば電子ビーム加熱などによって蒸発させて誘電体
層の表面に結晶成長の形で堆積させる手法、すなわち蒸
着法によって形成される。[0006] Such a magnesium oxide film is formed by a technique of evaporating a film material by, for example, electron beam heating and depositing it on the surface of a dielectric layer in the form of crystal growth, that is, a vapor deposition method.
【0007】[0007]
【発明が解決しようとする課題】従来のPDPにおいて
は、放電特性の経時変化が比較的に著しいという問題が
あった。In the conventional PDP, there is a problem that the change in discharge characteristics with time is relatively remarkable.
【0008】経時変化は、保護膜の形成時及びその後
に、酸化マグネシウム膜の中に炭素化合物や水酸基など
の不純物が取り込まれることに起因すると考えられる。
すなわち、放電空間の周囲の封止材などから有機溶剤
(炭素化合物)が混入すると、酸化マグネシウム膜の中
で炭酸マグネシウム(MgCO3 )が生成される。炭酸
マグネシウムは放電エネルギーによって化学変化を起こ
し、これによって生じた一酸化炭素(CO)又は二酸化
炭素(CO2 )が酸化マグネシウム膜の表面に吸着する
ことから、PDPの使用時間が長くなるつれて、放電開
始電圧が上昇して表示動作が不安定となる。It is considered that the change with time is caused by the incorporation of impurities such as carbon compounds and hydroxyl groups into the magnesium oxide film during and after the formation of the protective film.
That is, when an organic solvent (carbon compound) is mixed in from the sealing material around the discharge space, magnesium carbonate (MgCO 3 ) is generated in the magnesium oxide film. Magnesium carbonate undergoes a chemical change due to discharge energy, and carbon monoxide (CO) or carbon dioxide (CO 2 ) generated by the change is adsorbed on the surface of the magnesium oxide film. The discharge start voltage rises and the display operation becomes unstable.
【0009】また、CO及びCO2 は保護膜の表面上で
発光していない放電セルに集まる性質があるので、発光
の頻度が少ない放電セルの放電開始電圧が他より上昇す
る現象(いわゆる焼付き)が生じ、PDPの寿命が短く
なる。Further, since CO and CO 2 tend to collect on discharge cells which do not emit light on the surface of the protective film, the discharge starting voltage of discharge cells having low light emission frequency rises more than others (so-called burn-in). ) Occurs, and the life of the PDP is shortened.
【0010】本発明は、上述の問題に鑑み、誘電体層を
保護するための酸化マグネシウム膜に起因した放電特性
の経時変化を抑え、表示の安定化及び長寿命化を図るこ
とを目的としている。The present invention has been made in view of the above-described problems, and has as its object to suppress a temporal change in discharge characteristics due to a magnesium oxide film for protecting a dielectric layer, thereby stabilizing a display and extending the life. .
【0011】[0011]
【課題を解決するための手段】請求項1の発明に係る製
造方法は、膜材料を5×10-5〜1×10-4Torrの
酸素を含む酸素雰囲気中で蒸発させる真空蒸着法によっ
て、誘電体層上に酸化マグネシウムの〈111〉配向膜
からなる保護膜を形成する工程を含む。According to a first aspect of the present invention, there is provided a manufacturing method comprising the steps of: evaporating a film material in an oxygen atmosphere containing 5 × 10 −5 to 1 × 10 −4 Torr of oxygen; Forming a protective film made of a <111> oriented film of magnesium oxide on the dielectric layer.
【0012】[0012]
【0013】[0013]
【0014】誘電体層の保護膜を構成する酸化マグネシ
ウムの〈111〉配向膜は、〈111〉配向結晶(膜厚
方向の結晶方位が〈111〉であり膜平面と平行な面が
{111}面の結晶)が他の結晶に対してその数の上で
優勢となった酸化マグネシウム膜であり、適当な酸素分
圧の酸素雰囲気中での真空蒸着によって形成される。The <111> oriented film of magnesium oxide constituting the protective film of the dielectric layer is a <111> oriented crystal (crystal orientation in the film thickness direction is <111> and a plane parallel to the film plane is {111}. (Plane crystal) is a magnesium oxide film that has become dominant over other crystals in number, and is formed by vacuum deposition in an oxygen atmosphere at an appropriate oxygen partial pressure.
【0015】このような〈111〉配向膜は、他の膜質
の酸化マグネシウム膜と比べて、すなわち、特定の結晶
方位が他の結晶方位に対して優勢とならず個々の結晶が
不規則な方向に結晶成長した状態の膜、及び比較的に形
成し易い〈200〉配向膜などと比べて、表示の安定化
及び長寿命化の上で優れている。[0015] Such a <111> orientation film is different from a magnesium oxide film of other film quality, that is, a specific crystal orientation does not become dominant over other crystal orientations, and each crystal has an irregular orientation. It is superior in terms of display stabilization and long life as compared with a film in a state of crystal growth and an <200> orientation film which is relatively easy to form.
【0016】つまり、蒸着条件を変更して形成した種々
の酸化マグネシウム膜について、X線回折によってそれ
らの膜構造を調べた後、各酸化マグネシウム膜を設けた
PDPの焼付き電圧を測定した結果、図5に示すよう
に、膜中に〈111〉配向結晶が多く含まれるほど焼付
き電圧の値が小さいことが見出された。That is, after examining the film structures of various magnesium oxide films formed by changing the deposition conditions by X-ray diffraction, the seizure voltage of the PDP provided with each magnesium oxide film was measured. As shown in FIG. 5 , it was found that the more the <111> oriented crystal was included in the film, the smaller the value of the image sticking voltage.
【0017】ここで、焼付き電圧は上述の焼付きの度合
いを示す値である。すなわち、放電特性の経時変化を確
認するための試験として、PDPの一部の放電セルを例
えば500時間程度の時間(焼付き試験時間)にわたっ
て連続的に点灯(放電)させ、その後に各放電セルにつ
いて放電開始電圧を測定したときの点灯放電セルとその
近傍の非点灯放電セルとの間の測定値の差を焼付き電圧
として示したものである。焼付き電圧の値が小さいほ
ど、焼付きが軽微であり、放電特性の上で酸化マグネシ
ウム膜の膜質が良好であることを示している。Here, the image sticking voltage is a value indicating the degree of image sticking described above. That is, as a test for confirming the change over time in the discharge characteristics, a part of the discharge cells of the PDP are continuously lit (discharged) for, for example, about 500 hours (seizure test time), and then each discharge cell is discharged. The difference in the measured value between the lit discharge cell and the non-lit discharge cell in the vicinity when the discharge start voltage was measured for the sample was shown as the image sticking voltage. The smaller the value of the seizure voltage, the less the seizure, indicating that the quality of the magnesium oxide film is better in terms of discharge characteristics.
【0018】[0018]
【実施例】図1は本発明に係るPDP1の要部の構造を
示す断面図である。PDP1は、マトリクス表示方式の
面放電型のPDPであり、一対のガラス基板11,2
1、互いに平行に隣接配置された表示電極13,14、
AC駆動のための誘電体層15、内部の放電空間30を
単位発光領域毎に区画するための隔壁19、後述の保護
膜16、隔壁19と当接して放電空間30の間隙寸法を
規定する隔壁29、単位発光領域を選択的に発光させる
ためのアドレス電極22、及び所定発光色の蛍光体28
から構成されている。FIG. 1 is a sectional view showing the structure of a main part of a PDP 1 according to the present invention. The PDP 1 is a surface discharge type PDP of a matrix display type, and has a pair of glass substrates 11 and 12.
1, display electrodes 13 and 14 arranged in parallel and adjacent to each other;
Dielectric layer 15 for AC driving, partition wall 19 for partitioning internal discharge space 30 for each unit light-emitting region, protective film 16 described later, partition wall which contacts partition wall 19 to define the gap size of discharge space 30 29, an address electrode 22 for selectively emitting light in a unit light emitting region, and a phosphor 28 of a predetermined emission color
It is composed of
【0019】放電空間30には、放電ガスとして例えば
ネオンとキセノンとからなるペニングガスが封入されて
いる。なお、誘電体層15及び隔壁19,29は、低融
点ガラスペーストを所定形状に印刷して焼成することに
よって形成されている。The discharge space 30 is filled with a penning gas composed of, for example, neon and xenon as a discharge gas. The dielectric layer 15 and the partitions 19 and 29 are formed by printing a low-melting glass paste into a predetermined shape and firing the paste.
【0020】一対の表示電極13,14に対して、これ
らの間の相対電位が交互に反転するように所定の駆動電
圧(交番パルス)を印加すると、印加毎に誘電体層15
の表面方向の放電(面放電)が起こり、これにより生じ
た紫外線によって蛍光体28が励起されて発光する。When a predetermined drive voltage (alternating pulse) is applied to the pair of display electrodes 13 and 14 so that the relative potential between them is alternately inverted, the dielectric layer 15 is applied each time.
(Surface discharge) occurs in the surface direction of the phosphor, and the ultraviolet light generated by the discharge excites the phosphor 28 to emit light.
【0021】このとき、放電毎に誘電体層15に駆動電
圧と反対の極性の壁電荷が蓄積し、これにより、駆動電
圧を壁電荷の分だけ放電開始電圧より低い電圧とするこ
とができる。At this time, wall charges of the opposite polarity to the drive voltage are accumulated in the dielectric layer 15 for each discharge, whereby the drive voltage can be made lower than the discharge start voltage by the amount of the wall charges.
【0022】保護膜16は、PDP1の製造に際して隔
壁19を形成した後の段階で設けられ、隔壁19を含め
て誘電体層15の表面を放電空間30に対して被覆し、
誘電体層15の劣化を防止する。The protective film 16 is provided at a stage after the formation of the partition wall 19 in the manufacture of the PDP 1, and covers the surface of the dielectric layer 15 including the partition wall 19 with respect to the discharge space 30.
Deterioration of the dielectric layer 15 is prevented.
【0023】PDP1においては、この保護膜16とし
て、放電開始電圧の低圧化の上で有利な酸化マグネシウ
ム膜の内で、特に上述のように他の膜質の酸化マグネシ
ウムに比べて焼付きの起こりにくい〈111〉配向膜が
設けられている。In the PDP 1, as the protective film 16, among the magnesium oxide films which are advantageous in lowering the discharge starting voltage, seizure is less likely to occur as compared with other types of magnesium oxide as described above. An <111> orientation film is provided.
【0024】以上の構造のPDP1は、各ガラス基板1
1,21について別個に所定の構成要素を設ける工程、
ガラス基板11,21を対向配置して周囲を封止する工
程、及び放電ガスを封入する工程などを経て製造され
る。その際、ガラス基板11側において、保護膜16は
蒸着によって形成される。The PDP 1 having the above structure is used for each glass substrate 1
Providing predetermined components separately for 1, 21;
It is manufactured through a process of sealing the periphery by arranging the glass substrates 11 and 21 facing each other and a process of sealing a discharge gas. At this time, on the glass substrate 11 side, the protective film 16 is formed by vapor deposition.
【0025】図2は本発明に係る蒸着装置2の概略の構
成を示す図である。蒸着装置2は、チャンバー40と、
その内部に設けられた電子ビーム加熱型の蒸発源41、
ヒーター45、及び分圧真空計46などから構成されて
いる。FIG. 2 is a view showing a schematic configuration of the vapor deposition apparatus 2 according to the present invention. The vapor deposition device 2 includes a chamber 40,
An electron beam heating type evaporation source 41 provided therein,
It comprises a heater 45, a partial pressure vacuum gauge 46 and the like.
【0026】蒸発源41は、熱電子を放出するフィラメ
ント42、膜材料の蒸発物質(ターゲット)としての酸
化マグネシウム(MgO)16aを収納する耐熱容器
(るつぼ)43、熱電子流EBを偏向してターゲットに
導く磁束発生部44からなり、熱電子流EBのエネルギ
ーによって酸化マグネシウム16aを加熱して蒸発させ
る。The evaporation source 41 includes a filament 42 for emitting thermoelectrons, a heat-resistant container (crucible) 43 for storing magnesium oxide (MgO) 16a as a vaporized substance (target) of a film material, and a deflection of the thermoelectron stream EB. The magnetic flux generating unit 44 guides to the target, and heats and evaporates the magnesium oxide 16a by the energy of the thermionic current EB.
【0027】次に、蒸着装置2を用いて行う保護膜16
の蒸着について説明する。まず、誘電体15及び図示し
ない隔壁19を設けた後の所定数のガラス基板11を、
誘電体層15が蒸発源41と対向するようにチャンバー
40内の所定位置に固定する。Next, the protective film 16 performed by using the vapor deposition device 2
Will be described. First, a predetermined number of glass substrates 11 after the dielectric 15 and the not-shown partition 19 are provided,
The dielectric layer 15 is fixed at a predetermined position in the chamber 40 so as to face the evaporation source 41.
【0028】続いて、図示しない真空ポンプによりチャ
ンバー40の排気を行い、チャンバー40内を1×10
-6[Torr]程度の真空状態とする。この真空状態の
形成と並行して、又は真空状態が形成された後に、ヒー
ター45の熱輻射によってガラス基板11を加熱する。Subsequently, the chamber 40 is evacuated by a vacuum pump (not shown), so that the inside of the chamber 40 is 1 × 10
-6 [Torr] vacuum. The glass substrate 11 is heated by the heat radiation of the heater 45 in parallel with the formation of the vacuum state or after the formation of the vacuum state.
【0029】誘電体層15の表面温度が150℃程度に
達すると、蒸発源41を作動させて酸化マグネシウム1
6aを蒸発させる。蒸発した酸化マグネシウム16aは
蒸気流MBとなってガラス基板11に到達し、誘電体層
15の表面(膜形成面)15a上に結晶成長の形で堆積
する。このとき、堆積速度が例えば毎秒20Åとなるよ
うに蒸発源41の制御を行う。When the surface temperature of the dielectric layer 15 reaches about 150.degree.
6a is evaporated. The evaporated magnesium oxide 16a reaches the glass substrate 11 as a vapor stream MB, and is deposited on the surface (film formation surface) 15a of the dielectric layer 15 in the form of crystal growth. At this time, the evaporation source 41 is controlled so that the deposition rate is, for example, 20 ° per second.
【0030】これと並行して、ガスボンベ50からチャ
ンバー40内へ酸素ガス16bを供給し、酸素雰囲気中
で結晶成長を進行させる。このとき、マスフローコント
ローラ51によって酸素の供給量を調節し、チャンバー
40内の酸素分圧を所定値に保つ。At the same time, oxygen gas 16b is supplied from the gas cylinder 50 into the chamber 40, and crystal growth proceeds in an oxygen atmosphere. At this time, the supply amount of oxygen is adjusted by the mass flow controller 51, and the partial pressure of oxygen in the chamber 40 is maintained at a predetermined value.
【0031】所定の時間が経過して4000〜5000
Å程度の膜厚の保護膜15の形成が終了すると、蒸発源
41及びヒーター45などの作動を停止し、ガラス基板
11の温度がある程度下がるのを待ってチャンバー40
内を大気圧に戻し、ガラス基板11を取り出す。そし
て、取り出したガラス基板11を後工程へ送る。After a predetermined time elapses, 4000 to 5000
When the formation of the protective film 15 having a thickness of about Å is completed, the operations of the evaporation source 41 and the heater 45 are stopped, and the chamber 40 is waited until the temperature of the glass substrate 11 decreases to some extent.
The inside is returned to the atmospheric pressure, and the glass substrate 11 is taken out. Then, the removed glass substrate 11 is sent to a subsequent process.
【0032】図3は酸素分圧と酸化マグネシウム膜の結
晶配向性との関係を示すグラフである。図3において、
左縦軸は、膜内の酸化マグネシウム結晶の内で〈11
1〉配向結晶の占める割合であり、X線回折における各
結晶方位のピーク強度の和に対する〈111〉結晶方位
のピーク強度の比率に対応する。なお、ここで言うピー
ク強度は、通常、ピーク波形の面積(すなわち積分強
度)を示すものであり、このピーク強度が所定の結晶の
数に対応するものとなる(この定義は以後も同様であ
る)。FIG. 3 is a graph showing the relationship between the oxygen partial pressure and the crystal orientation of the magnesium oxide film. In FIG.
The left vertical axis shows <11 in the magnesium oxide crystals in the film.
1> The ratio occupied by the oriented crystals, and corresponds to the ratio of the peak intensity of the <111> crystal orientation to the sum of the peak intensities of the respective crystal orientations in X-ray diffraction. The peak intensity referred to here usually indicates the area of the peak waveform (that is, the integrated intensity), and the peak intensity corresponds to a predetermined number of crystals (this definition will be the same hereinafter). ).
【0033】図中に実線で示すように、酸素分圧が高く
なるにつれて、膜中の〈111〉配向結晶の割合が増大
し、5×10-5[Torr]付近から増大が顕著となり
7×10 -5 [Torr]付近でその割合が50%を越え
る。As shown by the solid line in the figure, as the oxygen partial pressure increases, the proportion of the <111> oriented crystals in the film increases, and the increase becomes remarkable from around 5 × 10 −5 [Torr].
In the vicinity of 7 × 10 −5 [Torr] , the ratio exceeds 50%.
【0034】しかしその反面、図中に破線で示すよう
に、酸素分圧が1×10-4[Torr]程度以上となる
と、膜全体の結晶性が急激に悪化する。すなわち酸化マ
グネシウム膜が非晶質となる。そのため、膜中の〈11
1〉配向結晶の絶対量としては、図中に鎖線で示すよう
に、酸素分圧が8×10-5[Torr]程度を越えると
減少する。However, on the other hand, when the oxygen partial pressure is about 1 × 10 −4 [Torr] or more, as shown by the broken line in the figure, the crystallinity of the whole film rapidly deteriorates. That is, the magnesium oxide film becomes amorphous. Therefore, <11 in the film
1> The absolute amount of the oriented crystal decreases when the oxygen partial pressure exceeds about 8 × 10 −5 [Torr], as indicated by a chain line in the figure.
【0035】図4は酸素分圧をパラメータとした焼付き
試験時間と焼付き電圧との関係を示すグラフである。図
4において、酸素分圧が5×10-5又は8×10-5[T
orr]の酸素雰囲気中で蒸着した酸化マグネシウム膜
では、1000時間にわたって連続的に放電させた場合
にも、ほとんど焼付きが生じない。これに対し酸素分圧
が2×10-5[Torr]の酸素雰囲気中で蒸着した酸
化マグネシウム膜では、放電時間が長くなるにつれて焼
付きが顕著となり、1000時間で焼付き電圧が5Vを
越すレベルに達する。FIG. 4 is a graph showing the relationship between the seizure test time and the seizure voltage using the oxygen partial pressure as a parameter. In FIG. 4, the oxygen partial pressure is 5 × 10 −5 or 8 × 10 −5 [T
[orr], the magnesium oxide film deposited in an oxygen atmosphere hardly causes seizure even when continuously discharged for 1000 hours. On the other hand, in a magnesium oxide film deposited in an oxygen atmosphere having an oxygen partial pressure of 2 × 10 −5 [Torr], seizure becomes remarkable as the discharge time becomes longer, and the seizure voltage exceeds 5 V in 1000 hours. Reach
【0036】つまり、図3及び図4を総合すると、酸素
雰囲気中の蒸着による保護膜16の形成に際して、酸素
分圧の値としては、5×10-5〜1×10-4[Tor
r]程度の範囲の好ましいことが判る。That is, referring to FIGS. 3 and 4, when forming the protective film 16 by vapor deposition in an oxygen atmosphere, the value of the oxygen partial pressure is 5 × 10 -5 to 1 × 10 -4 [Torr
r] is preferable.
【0037】[0037]
【0038】[0038]
【0039】[0039]
【0040】[0040]
【0041】[0041]
【0042】[0042]
【0043】上述の実施例においては、面放電型のPD
P1を例示したが、本発明は対向放電型のPDPにも適
用することができる。上述の実施例において、蒸発源4
1の形式、チャンバー40の構造、蒸発の制御条件は、
酸化マグネシウムの〈111〉配向膜が得られる範囲で
適宜変更することができる。In the above embodiment, the surface discharge type PD
Although P1 is illustrated, the present invention can be applied to a facing discharge type PDP. In the above embodiment, the evaporation source 4
Type 1, the structure of the chamber 40, and the control conditions for evaporation are as follows:
It can be changed appropriately within a range where a <111> orientation film of magnesium oxide can be obtained.
【0044】[0044]
【発明の効果】請求項1の発明によれば、放電特性の上
で有利な組成の均一な酸化マグネシウム膜を有したプラ
ズマディスプレイパネルを容易に製造することができ
る。したがって、誘電体層を保護するための酸化マグネ
シウム膜に起因した放電特性の経時変化(特に焼付きに
よる放電開始電圧の部分的上昇)を抑えることができ、
表示の安定化及び長寿命化を図ることができる。According to the first aspect of the present invention, it is possible to easily manufacture a plasma display panel having a uniform magnesium oxide film having a composition advantageous in terms of discharge characteristics. Therefore, it is possible to suppress a change with time in the discharge characteristics (particularly, a partial increase in the discharge starting voltage due to image sticking) due to the magnesium oxide film for protecting the dielectric layer,
The display can be stabilized and the service life can be extended.
【0045】[0045]
【図1】本発明に係るPDPの要部の構成を示す断面図
である。FIG. 1 is a sectional view showing a configuration of a main part of a PDP according to the present invention.
【図2】本発明に係る蒸着装置の概略の構成を示す図で
ある。FIG. 2 is a diagram showing a schematic configuration of a vapor deposition apparatus according to the present invention.
【図3】酸素分圧と酸化マグネシウム膜の結晶配向性と
の関係を示すグラフである。FIG. 3 is a graph showing a relationship between oxygen partial pressure and crystal orientation of a magnesium oxide film.
【図4】酸素分圧をパラメータとした焼付き試験時間と
焼付き電圧との関係を示すグラフである。FIG. 4 is a graph showing the relationship between the seizure test time and the seizure voltage using oxygen partial pressure as a parameter.
【図5】酸化マグネシウム膜中の〈111〉配向結晶の
量と放電特性に係わる焼付き電圧との関係を示すグラフ
である。FIG. 5 is a graph showing the relationship between the amount of <111> oriented crystals in the magnesium oxide film and the seizure voltage related to discharge characteristics.
1 PDP(AC型プラズマディスプレイパネル) 30 放電空間 15 誘電体層 16 保護膜(酸化マグネシウムの〈111〉配向膜) Reference Signs List 1 PDP (AC plasma display panel) 30 Discharge space 15 Dielectric layer 16 Protective film (<111> oriented film of magnesium oxide)
フロントページの続き (56)参考文献 特開 平5−94766(JP,A) 特開 昭56−38729(JP,A) Kenji Machida他,“S TM Observation of Vacuum Evaporated MgO Films in AC Pl asma Displays”,電子情 報通信学会技術研究報告,社団法人 電 子情報通信学会,1991年10月31日発行, Vol.91,No.309,p57−61 町田他,”ac型プラズマディスプレ イの保護層MgOの膜質評価”,電子情 報通信学会技術研究報告,社団法人 電 子情報通信学会,1991年6月28日発行, Vol.91,No.115,p.61−66 (58)調査した分野(Int.Cl.7,DB名) H01J 9/02 H01J 11/02 JICSTファイル(JOIS)Continuation of the front page (56) References JP-A-5-94766 (JP, A) JP-A-56-38729 (JP, A) Kenji Machida et al., "STM Observation of Vacuum Evaporated MgO Films in AC Plasma Disp." , IEICE Technical Report, IEICE, October 31, 1991, Vol. 91, No. 309, p57-61 Machida et al., "Evaluation of Film Quality of MgO Protective Layer of ac-type Plasma Display", IEICE Technical Report, IEICE, June 28, 1991, Vol. 91, No. 115, p. 61-66 (58) Field surveyed (Int.Cl. 7 , DB name) H01J 9/02 H01J 11/02 JICST file (JOIS)
Claims (1)
の酸素を含む酸素雰囲気中で蒸発させる真空蒸着法によ
って、誘電体層上に酸化マグネシウムの〈111〉配向
膜からなる保護膜を形成する工程を含むことを特徴とす
るAC型プラズマディスプレイパネルの製造方法。1. A film material of 5 × 10 -5 to 1 × 10 -4 Torr.
Manufacturing a protective film comprising a magnesium oxide <111> oriented film on a dielectric layer by a vacuum evaporation method of evaporating in an oxygen atmosphere containing oxygen. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3785592A JP3149249B2 (en) | 1992-02-25 | 1992-02-25 | AC type plasma display panel and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3785592A JP3149249B2 (en) | 1992-02-25 | 1992-02-25 | AC type plasma display panel and method of manufacturing the same |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000007333A Division JP2000215799A (en) | 2000-01-01 | 2000-01-17 | Method for manufacturing AC type plasma display panel and method for improving characteristics |
| JP2000228554A Division JP3207842B2 (en) | 1992-02-25 | 2000-07-28 | Method of manufacturing AC type plasma display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05234519A JPH05234519A (en) | 1993-09-10 |
| JP3149249B2 true JP3149249B2 (en) | 2001-03-26 |
Family
ID=12509161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3785592A Expired - Fee Related JP3149249B2 (en) | 1992-02-25 | 1992-02-25 | AC type plasma display panel and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3149249B2 (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2793532B2 (en) * | 1995-09-27 | 1998-09-03 | 日本電気株式会社 | Method for manufacturing plasma display panel |
| JP3339554B2 (en) | 1995-12-15 | 2002-10-28 | 松下電器産業株式会社 | Plasma display panel and method of manufacturing the same |
| JP3073451B2 (en) * | 1996-11-20 | 2000-08-07 | 富士通株式会社 | Method for manufacturing plasma display panel |
| JP3247632B2 (en) | 1997-05-30 | 2002-01-21 | 富士通株式会社 | Plasma display panel and plasma display device |
| US6150030A (en) * | 1997-11-20 | 2000-11-21 | Balzers Hochvakuum Ag | Substrate coated with an MgO-layer |
| JP4878425B2 (en) * | 2000-08-29 | 2012-02-15 | パナソニック株式会社 | Plasma display panel, manufacturing method thereof, and plasma display panel display device |
| WO2003017313A1 (en) * | 2001-08-14 | 2003-02-27 | Sony Corporation | Plasma display and method for manufacturing the same |
| JP2003100219A (en) | 2001-09-26 | 2003-04-04 | Sharp Corp | Plasma information display element and method of manufacturing the same |
| US7391156B2 (en) | 2003-09-24 | 2008-06-24 | Matsushita Electrical Industrial Co., Ltd. | Plasma display panel |
| JP2006120356A (en) * | 2004-10-19 | 2006-05-11 | Fujitsu Hitachi Plasma Display Ltd | Plasma display panel and its manufacturing method |
| KR100670324B1 (en) | 2005-03-23 | 2007-01-16 | 삼성에스디아이 주식회사 | Plasma display panel |
| CN101496126B (en) | 2006-05-31 | 2010-12-29 | 松下电器产业株式会社 | Plasma display panel having a plurality of discharge cells |
| JP4958900B2 (en) | 2006-10-20 | 2012-06-20 | パナソニック株式会社 | Plasma display panel |
| JP4989634B2 (en) | 2006-10-20 | 2012-08-01 | パナソニック株式会社 | Plasma display panel |
| CN101522939A (en) | 2006-10-27 | 2009-09-02 | 株式会社爱发科 | Plasma display panel manufacturing method and manufacturing device |
| KR101451411B1 (en) * | 2007-12-14 | 2014-10-16 | 재단법인 포항산업과학연구원 | Method for surface modification of magnesium alloy plate |
-
1992
- 1992-02-25 JP JP3785592A patent/JP3149249B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| Kenji Machida他,"STM Observation of Vacuum Evaporated MgO Films in AC Plasma Displays",電子情報通信学会技術研究報告,社団法人 電子情報通信学会,1991年10月31日発行,Vol.91,No.309,p57−61 |
| 町田他,"ac型プラズマディスプレイの保護層MgOの膜質評価",電子情報通信学会技術研究報告,社団法人 電子情報通信学会,1991年6月28日発行,Vol.91,No.115,p.61−66 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05234519A (en) | 1993-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3149249B2 (en) | AC type plasma display panel and method of manufacturing the same | |
| JP4569933B2 (en) | Plasma display panel | |
| US7567036B2 (en) | Plasma display panel with single crystal magnesium oxide layer | |
| JP2002260535A (en) | Plasma display panel | |
| JP2003031136A (en) | Plasma display panel and manufacturing method of the same | |
| JP3207842B2 (en) | Method of manufacturing AC type plasma display panel | |
| KR20000068762A (en) | Gas discharge panel and gas light-emitting device | |
| JP2001332175A (en) | Alternating plasma display panel and production method of the same | |
| JP2793532B2 (en) | Method for manufacturing plasma display panel | |
| JP2000215799A (en) | Method for manufacturing AC type plasma display panel and method for improving characteristics | |
| KR100697495B1 (en) | Plasma display panel | |
| JPH10162743A (en) | Plasma display panel and method of forming protective film | |
| JPH11135023A (en) | Plasma display panel and method of manufacturing the same | |
| JP3015093B2 (en) | Plasma display panel and method of manufacturing the same | |
| JPH11149865A (en) | Method for manufacturing plasma display panel | |
| US7196472B2 (en) | Plasma display panel, its manufacturing method, and its protective layer material | |
| JPH11213875A (en) | Protective film material for AC type plasma display panel, method of manufacturing the same, and AC type plasma display panel | |
| JP2000277009A (en) | Method for producing magnesium oxide film for AC plasma display panel, magnesium oxide film for AC plasma display panel, AC plasma display panel, and AC plasma display device | |
| JPH08255562A (en) | Method for forming protective film for dielectric in PDP | |
| JP2004031276A (en) | Method of manufacturing image display device | |
| JP2002117758A (en) | Plasma display panel and its manufacturing method | |
| JP4788227B2 (en) | Plasma display panel | |
| KR100759444B1 (en) | Plasma display panel | |
| JPH04274127A (en) | Manufacture of plasma display panel | |
| JPH05182608A (en) | Field emission type electron tube |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19991116 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20001226 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S131 | Request for trust registration of transfer of right |
Free format text: JAPANESE INTERMEDIATE CODE: R313131 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080119 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090119 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090119 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100119 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110119 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |