JP3149514B2 - Method and apparatus for supplying vaporized gas - Google Patents
Method and apparatus for supplying vaporized gasInfo
- Publication number
- JP3149514B2 JP3149514B2 JP08121792A JP8121792A JP3149514B2 JP 3149514 B2 JP3149514 B2 JP 3149514B2 JP 08121792 A JP08121792 A JP 08121792A JP 8121792 A JP8121792 A JP 8121792A JP 3149514 B2 JP3149514 B2 JP 3149514B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- temperature
- vaporized gas
- vaporized
- supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L53/00—Heating of pipes or pipe systems; Cooling of pipes or pipe systems
- F16L53/30—Heating of pipes or pipe systems
- F16L53/32—Heating of pipes or pipe systems using hot fluids
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Pipe Accessories (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は気化ガス（液化ガスを気
化したガス）の供給方法に係り，特に，半導体装置製造
に使用する気化ガスの供給方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for supplying a vaporized gas (a gas obtained by vaporizing a liquefied gas), and more particularly to a method for supplying a vaporized gas used for manufacturing semiconductor devices.
【０００２】液化ガスは沸点の高いガスで，常温高圧下
では液体であり常温低圧下では気体となるものである。
半導体装置製造プロセスでは，クロロシラン類，四塩化
炭素（ＣＣｌ4 ），塩化水素（ＨＣｌ），六フッ化タン
グステン（ＷＦ6 ）をはじめ，多くの液化ガスを気化し
て使用する。A liquefied gas is a gas having a high boiling point, which is a liquid at normal temperature and high pressure and a gas at normal temperature and low pressure.
In a semiconductor device manufacturing process, many liquefied gases such as chlorosilanes, carbon tetrachloride (CCl 4 ), hydrogen chloride (HCl), and tungsten hexafluoride (WF 6 ) are vaporized and used.
【０００３】ところで，気化ガスはそれが供給されるク
リーンルーム環境等の温度変化により気体から液体へと
再液化してしまうことがある。それゆえ，気化ガスの供
給においては環境変化の影響を受けない供給方法を採用
する必要がある。[0003] Incidentally, the vaporized gas may be re-liquefied from a gas to a liquid due to a temperature change in a clean room environment to which the gas is supplied. Therefore, it is necessary to adopt a supply method that is not affected by environmental changes in the supply of vaporized gas.
【０００４】[0004]
【従来の技術】従来の再液化防止対策としては，気化
ガスを使用する装置の近くに液化ガスボンベを設置して
外気の影響を少なくする，気化ガスの供給管をヒータ
により加熱する，気化ガスの供給管の周囲を断熱材で
被覆する，といった方法が講じられていた。2. Description of the Related Art As conventional measures for preventing re-liquefaction, a liquefied gas cylinder is installed near a device using a vaporized gas to reduce the influence of outside air, a vaporized gas supply pipe is heated by a heater, a vaporized gas supply pipe is heated. A method of covering the periphery of the supply pipe with a heat insulating material has been taken.
【０００５】ところが，の方法では，気化ガスを使用
する装置の近くに液化ガスボンベを設置することができ
ないような配管が長くならざるを得ない場合には適用で
きず，の方法は配管が長くなるにつれてヒータも長く
なり，配管の数やセンサの数が増えると均一に温度制御
することが難しく，の方法では配管が長い時は配管内
部で液化が始まってしまう，といった欠点を有してい
た。However, the method cannot be applied to a case where a pipe that cannot install a liquefied gas cylinder near a device using a vaporized gas has to be long, and the method requires a long pipe. As the number of pipes and the number of sensors increase, it becomes difficult to control the temperature uniformly, and the method (1) has a disadvantage that liquefaction starts inside the pipe when the pipe is long.
【０００６】したがって，気化ガスの安定供給ができ
ず，再液化によりガス流量計が詰まるといった問題の生
じることがあった。[0006] Therefore, there has been a problem that the stable supply of the vaporized gas cannot be performed, and the gas flow meter is clogged by the reliquefaction.
【０００７】[0007]
【発明が解決しようとする課題】本発明は上記の問題に
鑑み，配管を通る気化ガスが再液化することを防止する
新しい方法を提供することを目的とする。SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a new method for preventing a vaporized gas passing through a pipe from being reliquefied.
【０００８】[0008]
【課題を解決するための手段】上記課題は，供給管を通
して気化ガスを供給する気化ガスの供給方法であって，
該供給管の周囲に設けられた外部管に対し，加熱した気
体を該気化ガスの流れる方向と反対方向に流すと共に，
該気化ガスの供給源近傍における温度を検出し，該温度
が予め定めた温度になるように該気体の温度を制御する
ことを特徴とする気化ガスの供給方法によって解決され
る。The above object is achieved through a supply pipe.
A vaporized gas supply method for supplying a vaporized gas by
Heated air is supplied to an external pipe provided around the supply pipe.
While flowing the body in a direction opposite to the direction in which the vaporized gas flows,
Detecting a temperature near the supply source of the vaporized gas;
Is controlled by controlling the temperature of the gas so as to reach a predetermined temperature .
【０００９】また，供給管を通して気化ガスを供給する
気化ガスの供給装置であって，該供給管の周囲に設けら
れた外部管と，加熱した気体を該気化ガスの流れる方向
と反対方向に流す気体供給手段と，該気化ガスの供給源
近傍における温度を検出する温度センサと，該温度が予
め定めた温度になるように該気体の温度を制御する制御
手段とを有することを特徴とする気化ガスの供給装置に
よって解決される。Further, a vaporized gas is supplied through a supply pipe.
A supply device for a vaporized gas, which is provided around the supply pipe.
Gas supply means for flowing a heated gas in a direction opposite to a direction in which the vaporized gas flows, and a supply source of the vaporized gas.
Control for controlling a temperature sensor for detecting the temperature in the vicinity, the temperature of the gas so that the temperature at which the temperature is predetermined
Means for supplying a vaporized gas .
【００１０】[0010]
【作用】本発明では，供給管２の周囲に空間を隔てて外
部管３を設け，その空間に加熱した気体を流している。
このようにすれば，気化ガスが気体の状態のまま保た
れ，再液化することがない。According to the present invention, an external pipe 3 is provided around the supply pipe 2 with a space therebetween, and a heated gas flows through the space.
In this way, the vaporized gas is kept in a gaseous state, and does not re-liquefy.
【００１１】また，この空間を気化ガスの流れる方向と
反対方向に加熱した気体を流す時，流れの途中で加熱し
た気体から熱が散逸し，末端である液化ガス源１側の空
間ではその気体の温度が最も低くなるから，液化ガス源
１側の空間の温度を検出してその温度が予め定めた温度
になるように気体加熱源４のパワーを制御すれば，加熱
した気体の流路の上流側ではそれより温度の高いことが
保証され，確実に気化ガスを気体の状態のまま保つこと
ができる。When a gas heated in a direction opposite to the direction in which the vaporized gas flows is passed through this space, heat is dissipated from the heated gas in the middle of the flow, and the gas is discharged in the space at the end of the liquefied gas source 1 side. Therefore, if the temperature of the space on the side of the liquefied gas source 1 is detected and the power of the gas heating source 4 is controlled so that the temperature becomes a predetermined temperature, the flow path of the heated gas can be reduced. On the upstream side, it is guaranteed that the temperature is higher than that, and the vaporized gas can be surely kept in a gaseous state.
【００１２】[0012]
【実施例】図１は実施例を示す模式図であり，１は液化
ガス源であって液化ガスボンベ，，２は供給管であって
気化ガス供給管，３は外部管，４は気体加熱源であって
ヒータ，５は送風手段であってファン，６は温度検出端
（温度センサ）であって熱電対，７は温度制御器，８は
半導体装置製造装置であってエッチング装置，９はマス
フローメータ, 10はフィルタを表す。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view showing an embodiment, wherein 1 is a liquefied gas source and a liquefied gas cylinder, 2 is a supply pipe and a vaporized gas supply pipe, 3 is an external pipe, and 4 is a gas heating source. A heater, 5 is a fan, a fan, 6 is a temperature detecting end (temperature sensor), a thermocouple, 7 is a temperature controller, 8 is a semiconductor device manufacturing apparatus, an etching apparatus, and 9 is a mass flow. Meter, 10 represents a filter.
【００１３】液化ガス源１は例えば四塩化ケイ素のボン
ベであり，気化ガス供給管２は例えば外径１０mmのステ
ンレス管，外部管３は例えば内径２０mmのステンレス
管，気体加熱源４は例えばニクロム線である。また，温
度制御器７は例えばＰＩＤ温度制御器である。The liquefied gas source 1 is, for example, a cylinder of silicon tetrachloride. It is. The temperature controller 7 is, for example, a PID temperature controller.
【００１４】液化ガス源１から四塩化ケイ素の気化ガス
が気化ガス供給管２の中を通り，マスフローメータ９を
経てエッチング装置９に供給される。ファン５により大
気がフィルタ10を通して外部管３に送られその大気がヒ
ータ４により加熱されて外部管３内を液化ガス源１側へ
流れる。外部管３の中を流れる加熱された大気の方向は
気化ガスの流れる方向と逆である。A vaporized gas of silicon tetrachloride from a liquefied gas source 1 passes through a vaporized gas supply pipe 2 and is supplied to an etching device 9 via a mass flow meter 9. The air is sent by the fan 5 to the external pipe 3 through the filter 10, and the air is heated by the heater 4 and flows through the external pipe 3 toward the liquefied gas source 1. The direction of the heated atmosphere flowing through the outer tube 3 is opposite to the direction of the flow of the vaporized gas.
【００１５】熱電対６の温度が例えば２４℃となるよう
にＰＩＤ温度制御器７により，ヒータ４に供給するパワ
ーを制御する。この温度はクリーンルームの空調温度で
もある。熱電対６の温度は２４℃より若干高めになるよ
うに設定しておいてもよい。このようにして，気化ガス
供給管２中を通る四塩化ケイ素の温度は，少なくとも２
４℃に保たれ，再液化することが防止される。気化ガス
供給管２中を通る四塩化ケイ素の圧力も安定に保たれ
る。The power supplied to the heater 4 is controlled by the PID temperature controller 7 so that the temperature of the thermocouple 6 becomes, for example, 24 ° C. This temperature is also the air conditioning temperature of the clean room. The temperature of the thermocouple 6 may be set to be slightly higher than 24 ° C. In this way, the temperature of silicon tetrachloride passing through the vaporized gas supply pipe 2 is at least 2
It is kept at 4 ° C to prevent re-liquefaction. The pressure of silicon tetrachloride passing through the vaporized gas supply pipe 2 is also kept stable.
【００１６】なお，フィルタ10は外部管３内の発塵防止
のためのものである。以上の実施例は半導体製造プロセ
スにおけるエッチング装置に気化ガスを供給する例につ
いて説明したが，エッチング装置に限らず，ＣＶＤ装置
のような薄膜成長装置に気化ガスを供給する場合にも適
用できる。さらに，本発明は半導体装置の製造に限ら
ず，広く電子デバイスの製造に適用できるものである。The filter 10 is for preventing dust from being generated in the outer tube 3. The above embodiment has been described with respect to an example in which a vaporized gas is supplied to an etching apparatus in a semiconductor manufacturing process. However, the present invention is not limited to an etching apparatus, and can be applied to a case where a vaporized gas is supplied to a thin film growth apparatus such as a CVD apparatus. Furthermore, the present invention is not limited to the manufacture of semiconductor devices, but can be widely applied to the manufacture of electronic devices.
【００１７】[0017]
【発明の効果】以上説明したように，本発明によれば，
気化ガス供給管２の周囲に空間を隔てて外部管を設け，
その空間に加熱した気体を流すことにより，気化ガスの
再液化を防止することができる。As described above, according to the present invention,
An outer pipe is provided around the vaporized gas supply pipe 2 with a space therebetween,
By flowing the heated gas into the space, reliquefaction of the vaporized gas can be prevented.
【００１８】また，この空間を気化ガスの流れる方向と
反対方向に加熱した気体を流し，液化ガス源１側の空間
の温度を検出してその温度が予め定めた温度になるよう
に気体加熱源４のパワーを制御することにより，気化ガ
スの再液化を確実に防止することができる。A gas heated in this space in a direction opposite to the direction in which the vaporized gas flows is caused to flow, and the temperature of the space on the side of the liquefied gas source 1 is detected, and the gas heating source is set to a predetermined temperature. By controlling the power of No. 4, re-liquefaction of the vaporized gas can be reliably prevented.
【図１】実施例を示す模式図である。FIG. 1 is a schematic diagram showing an embodiment.
１は液化ガス源であって液化ガスボンべ ２は供給管であって気化ガス供給管 ３は外部管 ４は気体加熱源であってヒータ ５は送風手段であってファン ６は温度検出端であり温度センサであって熱電対 ７は温度制御器であってＰＩＤ温度制御器 ８は気化ガスを使用する装置であってエッチング装置 ９はマスフローメータ 10はフィルタ 1 is a liquefied gas source, liquefied gas cylinder 2 is a supply pipe, vaporized gas supply pipe 3 is an external pipe 4 is a gas heating source, heater 5 is a blowing means, and fan 6 is a temperature detecting end. Temperature sensor, thermocouple 7 is a temperature controller, PID temperature controller 8 is a device using vaporized gas, etching device 9 is mass flow meter 10, filter is
───────────────────────────────────────────────────── フロントページの続き (72)発明者 青木 貞郎 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (56)参考文献 特開 昭61−269309（ＪＰ，Ａ) 特開 平２−184031（ＪＰ，Ａ) 特開 昭61−78393（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/3065 C23C 14/56 H01L 21/02 F16L 53/00 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Sadao Aoki 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Co., Ltd. (56) References JP-A-61-269309 (JP, A) JP-A-2-184403 (JP, A) JP-A-61-78393 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/3065 C23C 14/56 H01L 21/02 F16L 53/00
Claims (2)
ガスの供給方法であって， 該供給管の周囲に設けられた外部管に対し，加熱した気
体を該気化ガスの流れる方向と反対方向に流すと共に，
該気化ガスの供給源近傍における温度を検出し，該温度
が予め定めた温度になるように該気体の温度を制御する
ことを特徴とする 気化ガスの供給方法。1. A vaporizer for supplying a vaporized gas through a supply pipe.
A method for supplying gas, wherein heated gas is supplied to an external pipe provided around the supply pipe.
While flowing the body in a direction opposite to the direction in which the vaporized gas flows,
Detecting a temperature near the supply source of the vaporized gas;
Control the temperature of the gas so that the temperature becomes a predetermined temperature
A method for supplying a vaporized gas, comprising:
ガスの供給装置であって， 該供給管の周囲に設けられた外部管と，加熱した気体を
該気化ガスの流れる方向と反対方向に流す気体供給手段
と，該気化ガスの供給源近傍における温度を検出する温
度センサと，該温度が予め定めた温度になるように該気
体の温度を制御する制御手段とを有することを特徴とす
る気化ガスの供給装置。 2. A vaporizer for supplying a vaporized gas through a supply pipe.
A gas supply device, comprising: an external pipe provided around the supply pipe;
Gas supply means for flowing in a direction opposite to the direction in which the vaporized gas flows
And a temperature for detecting a temperature near the supply source of the vaporized gas.
Temperature sensor and the air so that the temperature becomes a predetermined temperature.
Control means for controlling the temperature of the body.
Gas supply device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08121792A JP3149514B2 (en) | 1992-04-03 | 1992-04-03 | Method and apparatus for supplying vaporized gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08121792A JP3149514B2 (en) | 1992-04-03 | 1992-04-03 | Method and apparatus for supplying vaporized gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05283371A JPH05283371A (en) | 1993-10-29 |
| JP3149514B2 true JP3149514B2 (en) | 2001-03-26 |
Family
ID=13740319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08121792A Expired - Lifetime JP3149514B2 (en) | 1992-04-03 | 1992-04-03 | Method and apparatus for supplying vaporized gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3149514B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6076359A (en) * | 1996-11-25 | 2000-06-20 | American Air Liquide Inc. | System and method for controlled delivery of liquified gases |
| JP2008133983A (en) * | 2006-11-28 | 2008-06-12 | Cool Technos:Kk | Ultra-low temperature gas generator |
-
1992
- 1992-04-03 JP JP08121792A patent/JP3149514B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05283371A (en) | 1993-10-29 |
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