JP3157934B2 - Thin film processing method - Google Patents
Thin film processing methodInfo
- Publication number
- JP3157934B2 JP3157934B2 JP34919392A JP34919392A JP3157934B2 JP 3157934 B2 JP3157934 B2 JP 3157934B2 JP 34919392 A JP34919392 A JP 34919392A JP 34919392 A JP34919392 A JP 34919392A JP 3157934 B2 JP3157934 B2 JP 3157934B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating
- insulating substrate
- plate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Liquid Crystal (AREA)
- ing And Chemical Polishing (AREA)
- Thin Film Transistor (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、液晶表示装置などに用
いられ、その表面に透明電極などの薄膜が形成される絶
縁性基板に関し、さらに絶縁性基板に形成される薄膜の
パターン形成を高精度で行う薄膜加工方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulating substrate used for a liquid crystal display device or the like and having a thin film such as a transparent electrode formed on the surface thereof. The present invention relates to a method of processing a thin film with high accuracy.
【0002】[0002]
【従来の技術】図3は、本発明の前提となる液晶表示装
置1の断面図である。一般に液晶表示装置1は、互いに
対向して配置されるたとえば透光性を有するガラス基板
などの絶縁性基板2,3を有している。絶縁性基板2の
液晶15層側表面上には、クロム、タンタルなどの金属
薄膜などから成るゲート電極4が形成され、その表面と
絶縁性基板2表面全体とを覆うように窒化シリコンなど
の窒化物から成る絶縁膜5a,5bが形成される。2. Description of the Related Art FIG. 3 is a sectional view of a liquid crystal display device 1 on which the present invention is based. In general, the liquid crystal display device 1 has insulating substrates 2 and 3 such as, for example, a glass substrate having a light transmitting property, which are arranged to face each other. A gate electrode 4 made of a metal thin film such as chromium or tantalum is formed on the surface of the insulating substrate 2 on the liquid crystal 15 layer side, and a nitride such as silicon nitride is formed so as to cover the surface and the entire surface of the insulating substrate 2. The insulating films 5a and 5b made of a material are formed.
【0003】さらに絶縁膜5bが形成されたゲート電極
4上に多結晶シリコンなどの半導体膜8aが形成され、
さらにその上に絶縁膜5cが形成され、その両側に半導
体膜8b,8cが形成される。この両側の半導体膜8
b,8cの表面には、チタン、モリブデン、アルミニウ
ムなどから成るソース電極6a,6bが形成され、絶縁
膜5bのソース電極6a,6bなどが形成されていない
部分にITO(インジウム錫酸化物)などの透明導電性
膜から成る絵素電極7が形成される。さらにソース電極
6a,6b全体を覆うように絶縁膜5dが形成される。
絶縁膜5dや絵素電極7の表面全体にポリイミドから成
る配向膜9が形成されて、絵素電極基板10が構成され
る。Further, a semiconductor film 8a such as polycrystalline silicon is formed on the gate electrode 4 on which the insulating film 5b is formed.
Further, an insulating film 5c is formed thereon, and semiconductor films 8b and 8c are formed on both sides thereof. Semiconductor films 8 on both sides
Source electrodes 6a and 6b made of titanium, molybdenum, aluminum or the like are formed on the surfaces of the electrodes b and 8c, and ITO (indium tin oxide) or the like is formed on a portion of the insulating film 5b where the source electrodes 6a and 6b are not formed. A pixel electrode 7 made of a transparent conductive film is formed. Further, an insulating film 5d is formed so as to cover the entire source electrodes 6a and 6b.
An alignment film 9 made of polyimide is formed on the entire surface of the insulating film 5d and the pixel electrode 7, thereby forming a pixel electrode substrate 10.
【0004】また、絶縁性基板3の液晶15層側表面に
は、金属薄膜などから成るブラックマスク11が形成さ
れ、さらにその表面と絶縁性基板3表面とに、ITOな
どの透明導電性膜から成る対向電極12が形成される。
この対向電極12表面を覆うように配向膜13が形成さ
れてブラックマスク基板14が構成される。絵素電極基
板10とブラックマスク基板14とが貼合わされて液晶
15が注入されて封止され、液晶表示装置1が形成され
る。A black mask 11 made of a metal thin film or the like is formed on the surface of the insulating substrate 3 on the liquid crystal 15 layer side, and a transparent conductive film such as ITO is formed on the surface and the surface of the insulating substrate 3. Is formed.
An alignment film 13 is formed so as to cover the surface of the counter electrode 12 to form a black mask substrate 14. The pixel electrode substrate 10 and the black mask substrate 14 are bonded together, and the liquid crystal 15 is injected and sealed, so that the liquid crystal display device 1 is formed.
【0005】以上のような絵素電極基板10やブラック
マスク基板14は、絶縁性基板2,3上にフォトエッチ
ングでパターニングを繰返し行うことによって作製され
る。なお、フォトエッチングには、フォトリソグラフィ
法が含まれている。フォトリソグラフィ法は、基板2,
3の表面2a,3aにフォトレジストを塗布する工程
と、形成されたフォトレジスト層表面にマスクを通して
紫外線を照射して露光する工程と、露光によって変質し
たフォトレジストを現像液で部分的に溶解する工程と、
残ったフォトレジストを熱で焼付けて定着させる工程と
に大別される。これらの各工程に対応して個別に処理装
置が準備され、基板2,3がそれぞれの処理装置間を順
次搬送される。このとき、基板2,3を各工程の順に1
枚ずつ搬送して処理を行う枚葉方式が採られるのが一般
的である。The above-described pixel electrode substrate 10 and black mask substrate 14 are manufactured by repeatedly patterning the insulating substrates 2 and 3 by photoetching. Note that photolithography is included in the photoetching. The photolithography method uses the substrate 2,
A step of applying a photoresist to the surfaces 2a and 3a of the substrate 3, a step of irradiating the surface of the formed photoresist layer with ultraviolet light through a mask, and partially dissolving the photoresist altered by the exposure with a developer. Process and
The remaining photoresist is roughly baked by heat and fixed. Processing apparatuses are individually prepared corresponding to these steps, and the substrates 2 and 3 are sequentially transported between the respective processing apparatuses. At this time, the substrates 2 and 3
In general, a single-wafer method in which a sheet is transported and processed one by one is adopted.
【0006】図4は、パターニング処理において基板2
2が載置されるプレート21の断面図である。フォトリ
ソグラフィ法の処理の中でも、特に基板22の正確な位
置決めが必要とされる露光工程や焼付工程では、図4に
示すようなプレート21が用いられる。プレート21に
は、基板22の載置面21aから反対側の面21bに貫
通する複数の挿通孔23が形成される。基板22は、載
置面21aとは反対側の面21bから空気を矢符Aのよ
うに排出することによって、プレート21に吸着する。
また、空気を矢符Bのように基板22側に噴射すること
によって基板22はプレート21から剥離する。このよ
うに、処理が終わって次の処理工程へ基板22を搬送す
る場合や、プレート21上で大まかな基板22の位置決
めを行う場合にはプレート21から離し、実際に処理を
行う場合や位置決めでの徴調整を行う場合には、プレー
ト21と基板22とを吸着させて露光や焼付けの処理が
行われる。FIG. 4 shows the substrate 2 in the patterning process.
FIG. 4 is a cross-sectional view of a plate 21 on which a plate 2 is placed. Among the processes of the photolithography method, a plate 21 as shown in FIG. 4 is used particularly in an exposure step or a printing step in which accurate positioning of the substrate 22 is required. The plate 21 is formed with a plurality of insertion holes 23 penetrating from the mounting surface 21a of the substrate 22 to the opposite surface 21b. The substrate 22 is adsorbed to the plate 21 by discharging air from a surface 21b opposite to the mounting surface 21a as indicated by an arrow A.
The substrate 22 is separated from the plate 21 by injecting air toward the substrate 22 as indicated by an arrow B. In this way, when the substrate 22 is conveyed to the next processing step after the processing or when the substrate 22 is roughly positioned on the plate 21, the substrate 22 is separated from the plate 21, and when the processing is actually performed or the positioning is performed. In the case of performing the adjustment, the plate 21 and the substrate 22 are attracted to each other to perform exposure and printing processes.
【0007】[0007]
【発明が解決しようとする課題】液晶表示装置を製造す
る上で、パターニングの作製精度の向上が強く望まれ、
今日までに基板自体の平面度や平滑度の向上や、成膜時
の基板へのダメージの減少などに技術的進歩が見られ、
基板が載置されるプレートに関しても、平面度や平滑度
の向上に著しい進歩が見られる。In manufacturing a liquid crystal display device, it is strongly desired to improve patterning manufacturing accuracy.
To date, technical progress has been seen in improving the flatness and smoothness of the substrate itself, and reducing damage to the substrate during film formation.
Significant progress has also been made in improving the flatness and smoothness of the plate on which the substrate is placed.
【0008】これらの進歩に伴い、プレート上に基板が
載置された際に基板とプレートとの平面度が同じであっ
た場合、両者の摩擦係数が高くなり、基板がプレート上
を滑らなくなる現象が発生する。また、基板上にさまざ
まな処理を行っていく段階で、薬液処理の乾燥後の残留
物や、焼付処理を行うときに基板から析出する成分が、
粘着性を有する物質となる。この物質が基板のパターニ
ング処理される面とは反対側の面に付着することによっ
ても、前述したように基板が滑らなくなる現象が発生す
る。With these advances, when the flatness of the substrate and the plate is the same when the substrate is placed on the plate, the friction coefficient between the two increases, and the substrate does not slide on the plate. Occurs. In addition, at the stage of performing various processes on the substrate, the residue after drying in the chemical solution process, and the component precipitated from the substrate when performing the baking process,
It becomes a sticky substance. Even if this substance adheres to the surface of the substrate opposite to the surface to be patterned, the phenomenon that the substrate does not slip occurs as described above.
【0009】そのため、焼付の工程においては基板の搬
送不良を生じ、基板を損傷させたりするおそれがある。
また、露光の工程においては、プレート上の基板の大ま
かな位置決めの方法として、たとえばプレート上に設け
られた不動の基準ピンに基板を機械的に押付けるピンア
ライメントなどのプリアライメントが実施できず、一時
的に装置を停止させる事態を招いたり、露光させること
ができてもパターニングの位置がずれるなどして設計ど
おりに処理が行われず、著しく生産性を低下させるとい
う課題を有している。For this reason, in the printing process, there is a possibility that the substrate may be transported poorly and the substrate may be damaged.
Also, in the exposure process, as a method of roughly positioning the substrate on the plate, for example, pre-alignment such as pin alignment for mechanically pressing the substrate against immovable reference pins provided on the plate cannot be performed. Even if the apparatus is temporarily stopped, or even if exposure can be performed, the patterning position is shifted, so that the processing is not performed as designed and the productivity is significantly reduced.
【0010】本発明の目的は、予め定めるパターンの薄
膜を形成する工程において基板の位置決めまたは搬送を
円滑に行うことができ、生産性が向上する薄膜加工方法
を提供することである。An object of the present invention is that it is possible to smoothly carry out the positioning or transport of the substrate in the step of forming a thin film pattern predetermined to provide a thin-film processing how to improve productivity.
【0011】[0011]
【0012】[0012]
【課題を解決するための手段】 本 発明は、絶縁性基板の
一方表面に予め定めるパターンの薄膜を形成する薄膜加
工方法において、前記薄膜を形成する工程のうちの少な
くとも1つの工程の実行に先立って、前記絶縁性基板の
他方表面に、絶縁性基板を載置するプレート上での滑り
をよくするための凹凸を形成することを特徴とする薄膜
加工方法である。 According to the present invention, there is provided a thin film processing method for forming a thin film having a predetermined pattern on one surface of an insulating substrate, wherein at least one of the steps of forming the thin film is performed. And forming unevenness on the other surface of the insulating substrate to improve slippage on a plate on which the insulating substrate is mounted.
【0013】[0013]
【作用】本発明に従えば、絶縁性基板の他方表面には、
前記薄膜を形成する際に前記絶縁性基板を載置するプレ
ート上での滑りをよくするための凹凸が形成される。絶
縁性基板の一方表面に形成された薄膜を、フォトエッチ
ングによって予め定めるパターンに加工する場合、他方
表面側にはフォトエッチングの各工程での、たとえば加
熱処理によって絶縁性基板自体に含まれる成分が析出し
て付着し、または薬液処理後に薬液が残留して粘着性を
有する物質となって付着し、加工を行う際に前記絶縁性
基板が載置されるプレート上を滑りにくくなる場合があ
る。そこで、絶縁基板の他方表面に、凹凸を形成して絶
縁性基板の滑りを良くする。According to the present invention, on the other surface of the insulating substrate,
When forming the thin film, irregularities are formed to improve the slip on a plate on which the insulating substrate is placed. When the thin film formed on one surface of the insulating substrate is processed into a predetermined pattern by photoetching, components included in the insulating substrate itself in each step of photoetching, for example, by heat treatment, are processed on the other surface side. There is a case where the chemical solution is deposited and adheres or the chemical solution remains after the chemical solution treatment and adheres as a sticky substance, so that it does not easily slip on the plate on which the insulating substrate is placed when performing the processing. Therefore, unevenness is formed on the other surface of the insulating substrate to improve the sliding of the insulating substrate.
【0014】また本発明に従えば、絶縁性基板の一方表
面に、予め定めるパターンの薄膜を形成する工程のうち
の少なくとも1つの工程の実行に先立って、前記絶縁性
基板の他方表面に凹凸を形成する。According to the invention, prior to the execution of at least one of the steps of forming a thin film having a predetermined pattern on one surface of the insulating substrate, irregularities are formed on the other surface of the insulating substrate. Form.
【0015】絶縁性基板の前記他方表面が、形成される
薄膜の加工精度を高めるために、研磨処理などが施され
て平滑化されている場合には、上述の工程を実行する装
置のプレート上に絶縁性基板を、その平滑化された表面
を接して、載置したときに、滑りにくくなる場合があ
る。また、各工程での加熱処理によって基板自体に含ま
れる成分が析出して付着し、あるいは薬液処理後に薬液
が残留して粘着性の物質となって付着し、前記プレート
上を滑りにくくなる場合もある。したがって、少なくと
も1つの工程の実行に先立って他方表面に侵食処理を行
い、凹凸を形成することによって基板とプレートとの間
に空気が介在して滑りやすくなる。In the case where the other surface of the insulating substrate is smoothed by a polishing process or the like in order to improve the processing accuracy of the formed thin film, the other surface of the insulating substrate is formed on a plate of an apparatus for performing the above-described steps. When the insulating substrate is placed with its smoothed surface in contact with the insulating substrate, the substrate may not slip easily. In addition, the components contained in the substrate itself are deposited and adhered by the heat treatment in each step, or the chemical solution remains as a sticky substance after the chemical solution treatment and adheres, and there is also a case where it is difficult to slip on the plate. is there. Therefore, the erosion treatment is performed on the other surface prior to the execution of at least one step to form irregularities, so that air is interposed between the substrate and the plate, so that the substrate becomes slippery.
【0016】[0016]
【実施例】図1は、本発明の一実施例である絶縁性基板
32の拡大断面図である。図1に示すように、処理を行
う前の絶縁性基板32の電極などが積層される表面32
aは、研磨されてベースコート層が成膜されるなどして
平滑度を高く保っており、この表面32a上にさまざま
な物質によって成膜が行われる。一方、反対側表面32
bは、後述する薬液処理によって凹凸が形成されてい
る。FIG. 1 is an enlarged sectional view of an insulating substrate 32 according to one embodiment of the present invention. As shown in FIG. 1, a surface 32 of the insulating substrate 32 on which electrodes and the like are laminated before the processing is performed.
“a” is polished to form a base coat layer to maintain a high degree of smoothness, and a film is formed on the surface 32a using various substances. On the other hand, the opposite surface 32
As for b, irregularities are formed by a chemical solution treatment described later.
【0017】反対側の表面32bには、基板32への薄
膜形成を進めていく過程で、薬液処理後の残留物や熱処
理によって絶縁性基板32自体から析出する成分が、粘
着性を有する物質となって付着する。したがって、処理
を行う際に基板32が載置されるプレートと基板32と
が付着して、プレート上を基板32が滑りにくくなる場
合がある。また、絶縁性基板32の反対側表面32bに
粘着物質が付着していない場合でも、絶縁性基板32の
反対側表面32bとプレートの表面との平面度が同じで
あれば、両者の摩擦係数が高くなって絶縁性基板32が
滑りにくくなる。On the opposite surface 32b, in the process of forming a thin film on the substrate 32, a residue after chemical treatment or a component precipitated from the insulating substrate 32 itself due to heat treatment is formed of an adhesive substance. Adheres. Therefore, when the process is performed, the plate on which the substrate 32 is placed and the substrate 32 adhere to each other, and the substrate 32 may not easily slide on the plate. Further, even when the adhesive substance is not attached to the opposite surface 32b of the insulating substrate 32, if the flatness between the opposite surface 32b of the insulating substrate 32 and the surface of the plate is the same, the friction coefficient between the two is reduced. As a result, the insulating substrate 32 becomes less slippery.
【0018】以上のような問題点を解決するために、た
とえば濃度が0.13%のフッ化水素と、59.9%の
硝酸との混合薬液による絶縁性基板32の反対側表面3
2bへの侵食処理が施される。この混合薬液中に浸すこ
とによってガラスから成る絶縁性基板32の反対側表面
32b自体が侵食されて表面に凹凸が形成され、さらに
絶縁性基板32の反対側面32bに付着した粘着物質を
除去することができる。したがって、粘着物質によって
絶縁性基板32の反対側表面32bとプレートとが付着
して滑りにくくなくなったり、絶縁性基板32の反対側
表面32bとプレートとの平面度が等しいために滑りに
くくなるといった問題が解消される。In order to solve the above problems, for example, the opposite surface 3 of the insulating substrate 32 is made of a mixed chemical solution of hydrogen fluoride having a concentration of 0.13% and nitric acid having a concentration of 59.9%.
2b is subjected to an erosion process. By immersing in the mixed chemical solution, the opposite surface 32b of the insulating substrate 32 made of glass itself is eroded to form irregularities on the surface, and the adhesive substance attached to the opposite side 32b of the insulating substrate 32 is removed. Can be. Therefore, the opposite surface 32b of the insulative substrate 32 and the plate adhere to the plate due to the adhesive substance, and the plate becomes less slippery, or the opposite surface 32b of the insulative substrate 32 and the plate become less slippery because they have the same flatness. Is eliminated.
【0019】図2は、本発明の一実施例の絶縁性基板3
2への処理工程を示す工程図である。絶縁性基板32へ
の処理工程は、まず工程a1において絶縁性基板32の
処理工程の受入が行われ、工程a2で絶縁性基板32の
洗浄が行われてゴミなどが除去された後、工程a3にお
いて、絶縁性基板32の表面32aに平滑性を高めるた
め、および形成層と絶縁性基板32との密着性を高め、
また、表面32aを薬液などから保護するためにベース
コート膜が成膜される。次に、工程a4で前述した混合
薬液中に絶縁性基板32を浸す処理を行い、その後、工
程a5でフォトリソグラフィ法による絶縁性基板32の
表面32aヘのパターニングが実施される。FIG. 2 shows an insulating substrate 3 according to an embodiment of the present invention.
FIG. 4 is a process chart showing a process step 2; In the processing step for the insulating substrate 32, first, in step a1, the processing step for the insulating substrate 32 is received, and in step a2, the insulating substrate 32 is cleaned to remove dust and the like. In order to improve the smoothness on the surface 32a of the insulating substrate 32 and to enhance the adhesion between the formation layer and the insulating substrate 32,
Further, a base coat film is formed to protect the surface 32a from a chemical solution or the like. Next, in step a4, the process of immersing the insulating substrate 32 in the above-mentioned mixed chemical solution is performed, and then, in step a5, patterning is performed on the surface 32a of the insulating substrate 32 by photolithography.
【0020】本発明の絶縁性基板2,3を用いて液晶表
示装置1を形成する過程を図3を用いて説明する。互い
に対向する一組の絶縁性基板2,3の対向側表面2a,
3aにはベースコート膜が塗布されて平滑度が維持され
ている。また、対向側表面2a,3aとは反対側表面2
b,3bは、混合薬液に浸されて絶縁性基板2,3の表
面2b,3bが侵食されて凹凸が形成され、粘着性物質
も除去される。The process of forming the liquid crystal display device 1 using the insulating substrates 2 and 3 of the present invention will be described with reference to FIG. Opposing surfaces 2a of a pair of insulating substrates 2 and 3 facing each other
A smoothness is maintained by applying a base coat film to 3a. In addition, the surface 2 on the opposite side to the surfaces 2a and 3a on the opposite side
The surfaces 2b and 3b are immersed in a mixed chemical solution to erode the surfaces 2b and 3b of the insulating substrates 2 and 3, thereby forming irregularities and removing the adhesive substance.
【0021】次に対向する絶縁性基板2の対向側表面2
aにはゲート電極4が形成され、パターニングの処理が
実施される。パターニングの処理としては、まずゲート
電極4を覆うように絶縁膜5aが塗布され、さらにその
上から絶縁膜5aと絶縁性基板2の表面2aとを覆うよ
うに絶縁膜5bが成膜される。さらに、ゲート電極4上
の絶縁膜5b表面には半導体膜8aが形成され、さらに
その上に絶縁膜5cが形成される。絶縁膜5cの一部と
半導体膜8aとを覆うように半導体膜8b,8cが形成
され、これらの半導体膜8b,8cとその下層の半導体
膜8aの端部を覆うようにソース電極6a,6bが形成
される。一方のソース電極6a側には絶縁膜5aを覆う
ように絵素電極7が形成され、ソース電極6a,6bと
絶縁膜5aとを覆うように絶縁膜5dが塗布され、最後
に絶縁性基板2の表面2aにパターニングして積層され
た膜すべてを覆うように配向膜9が塗布されて、絵素電
極基板10が形成される。Next, the opposing surface 2 of the opposing insulating substrate 2
On a, a gate electrode 4 is formed, and a patterning process is performed. In the patterning process, first, an insulating film 5a is applied so as to cover the gate electrode 4, and an insulating film 5b is formed thereon so as to cover the insulating film 5a and the surface 2a of the insulating substrate 2. Further, a semiconductor film 8a is formed on the surface of the insulating film 5b on the gate electrode 4, and an insulating film 5c is further formed thereon. Semiconductor films 8b and 8c are formed so as to cover a part of insulating film 5c and semiconductor film 8a, and source electrodes 6a and 6b are formed so as to cover these semiconductor films 8b and 8c and the ends of semiconductor film 8a thereunder. Is formed. On one source electrode 6a side, a picture element electrode 7 is formed so as to cover the insulating film 5a, an insulating film 5d is applied so as to cover the source electrodes 6a, 6b and the insulating film 5a, and finally, the insulating substrate 2 is formed. The orientation film 9 is applied so as to cover all the films laminated by patterning on the surface 2a of the pixel electrode 2 to form the pixel electrode substrate 10.
【0022】また、他の絶縁性基板3の対向側表面3a
には、始めにブラックマスク11が形成され、さらにそ
の表面と一部絶縁性基板3の表面3aとに対向電極12
が形成され、その表面全体を覆って配向膜13が塗布さ
れて、ブラックマスク基板14が形成される。Further, the opposite side surface 3a of another insulating substrate 3
First, a black mask 11 is formed, and a counter electrode 12 is formed on the surface of the black mask 11 and the surface 3 a of the insulating substrate 3.
Is formed, and an alignment film 13 is applied so as to cover the entire surface, whereby a black mask substrate 14 is formed.
【0023】これらの絵素電極基板10やブラックマス
ク基板14を形成するための成膜がなされるたびに、フ
ォトレジストを絶縁性基板2,3に塗布する工程と、形
成されたフォトレジストにマスクを通して紫外線を照射
する工程と、フォトレジストを現像液で溶解する工程
と、残ったフォトレジストを加熱して定着させる工程と
が繰返し実施される。こうして作製された絵素電極基板
10とブラックマスク基板14とが貼合わされて、基板
間に液晶15が注入されて封止され、液晶表示装置1が
作製される。Each time a film for forming the pixel electrode substrate 10 or the black mask substrate 14 is formed, a step of applying a photoresist to the insulating substrates 2 and 3 and a step of applying a mask to the formed photoresist The step of irradiating the photoresist with ultraviolet light, the step of dissolving the photoresist with a developer, and the step of heating and fixing the remaining photoresist are repeatedly performed. The picture element electrode substrate 10 and the black mask substrate 14 thus manufactured are bonded together, and a liquid crystal 15 is injected between the substrates and sealed, whereby the liquid crystal display device 1 is manufactured.
【0024】以上のように絶縁性基板2,3の対向側表
面2a,3aにパターニングを行う前に、他方側表面2
b,3bを混合薬液へ浸すことによって、絶縁性基板
2,3の表面2b,3bに付着している粘着物質が除去
され、プレート上を絶縁性基板2,3が滑らなくなると
いう問題が解消される。さらに、粘着物質が付着してい
なくても、プレートと絶縁性基板2,3の表面2b,3
bとの平面度が同じであるために、摩擦係数が高くて絶
縁性基板2,3が滑りにくいという場合、前述の混合薬
液によって絶縁性基板2,3の表面2b,3bが侵食さ
れて凹凸が形成され、摩擦係数が低くなって滑りやすく
なる。As described above, before patterning the opposing surfaces 2a, 3a of the insulating substrates 2, 3, the other surface 2a
By immersing b and 3b in the mixed chemical solution, the adhesive substance adhering to surfaces 2b and 3b of insulating substrates 2 and 3 is removed, and the problem that insulating substrates 2 and 3 do not slip on the plate is solved. You. Furthermore, even if the adhesive substance is not attached, the plate and the surfaces 2b, 3 of the insulating substrates 2, 3
In the case where the flatness of the insulating substrates 2 and 3 is high and the insulating substrates 2 and 3 are difficult to slip due to the same flatness with the surface b, the surfaces 2b and 3b of the insulating substrates 2 and 3 are eroded by the above-mentioned mixed chemical solution, so that Are formed, and the coefficient of friction is lowered to make it slippery.
【0025】したがって、基板形成の各処理を行う上
で、特に細かな位置決めを行う場合などに、絶縁性基板
2,3がプレート上を滑らないことによって、位置ずれ
が発生したりすることがなく、より精密な処理を実施す
ることができ、液晶表示装置1の生産性が格段に向上す
る。Therefore, when performing each process of substrate formation, particularly when performing fine positioning, the insulating substrates 2 and 3 do not slip on the plate, so that no positional displacement occurs. Thus, more precise processing can be performed, and the productivity of the liquid crystal display device 1 is significantly improved.
【0026】なお、本実施例では絶縁性基板2,3の表
面2b,3bを混合薬液に浸す工程を、絶縁性基板2,
3の表面2a,3aへパターニング処理が施される前に
行ったが、パターニング処理の過程において行ってもよ
く、その時期についても、複数回繰返して行われるパタ
ーニング処理のどの段階で行ってもよい。また、処理回
数についても、本実施例では1回のみ実施したが、侵食
によって絶縁性基板2,3が擦り減って、液晶表示装置
を作製する上で不都合が生じない範囲で、複数回にわた
って処理を施してもよい。In this embodiment, the step of dipping the surfaces 2b and 3b of the insulating substrates 2 and 3 in the mixed chemical solution is performed.
The patterning is performed before the patterning process is performed on the surfaces 2a and 3a of the substrate 3. However, the process may be performed during the patterning process, and the timing may be performed at any stage of the patterning process that is repeatedly performed a plurality of times. . In this embodiment, the number of times of the processing was only one. However, the processing was performed a plurality of times as long as the insulating substrates 2 and 3 were worn away due to the erosion and no inconvenience occurred in manufacturing the liquid crystal display device. May be applied.
【0027】さらに、混合薬液の種類や濃度について
は、本実施例では0.13%のフッ化水素と59.9%
の硝酸とを混ぜたものを混合薬液としたが、絶縁性基板
2,3の材料を侵食できる薬液であれば、どのような種
類や濃度の薬液を用いても構わない。Further, regarding the type and concentration of the mixed chemical solution, in this embodiment, 0.13% hydrogen fluoride and 59.9%
A mixture of nitric acid and nitric acid is used as a mixed chemical, but any type or concentration of chemical may be used as long as the chemical can erode the materials of the insulating substrates 2 and 3.
【0028】[0028]
【発明の効果】以上のように本発明によれば、一方表面
に形成された薄膜が予め定めるパターンに加工される絶
縁性基板の他方表面に対して凹凸を形成することによっ
て、様々な処理工程に絶縁性基板を搬送する際に、搬送
路と絶縁性基板の前記他方表面との間の摩擦を小さく
し、搬送しやすくすることができる。さらに、加工の際
に絶縁性基板の前記他方表面に付着した、絶縁性基板自
体から析出した粘着性を有する物質を、凹凸の形成時に
除去することもできるので、厳密な位置合わせを必要と
する処理工程において、絶縁性基板の滑りが悪いことに
よる位置ずれを防止することができる。As described above, according to the present invention, by forming irregularities on the other surface of an insulating substrate on which a thin film formed on one surface is processed into a predetermined pattern, various processing steps can be performed. When the insulating substrate is transported, the friction between the transport path and the other surface of the insulating substrate can be reduced to facilitate transport. Furthermore, since the substance having tackiness attached to the other surface of the insulating substrate during processing and deposited from the insulating substrate itself can be removed at the time of forming unevenness, strict alignment is required. In the processing step, misalignment due to poor slippage of the insulating substrate can be prevented.
【0029】また、本発明によれば、絶縁性基板の前記
他方表面に凹凸を形成する工程は、前記一方表面に施さ
れる薄膜を形成する工程、たとえばフォトエッチング処
理のレジスト塗布工程、露光工程、現像工程、焼付工
程、エッチング工程、レジスト除去工程の少なくとも1
つの工程の前に行い、必要であれば複数回にわたって行
ってもよい。したがって、作業効率を向上することがで
き、絶縁性基板自体の精度が向上するので、生産性の向
上を図ることができる。According to the present invention, the step of forming irregularities on the other surface of the insulating substrate includes the step of forming a thin film applied to the one surface, for example, a resist coating step of a photo-etching process, and an exposing step. At least one of a developing step, a baking step, an etching step, and a resist removing step.
It may be performed before one step and may be performed a plurality of times if necessary. Therefore, work efficiency can be improved, and the accuracy of the insulating substrate itself is improved, so that productivity can be improved.
【図1】本発明の一実施例である絶縁性基板32の拡大
断面図である。FIG. 1 is an enlarged sectional view of an insulating substrate 32 according to one embodiment of the present invention.
【図2】本発明の一実施例である薄膜加工法の処理工程
を示す工程図である。FIG. 2 is a process chart showing processing steps of a thin film processing method according to one embodiment of the present invention.
【図3】本発明の前提となる液晶表示装置1の断面図で
ある。FIG. 3 is a cross-sectional view of the liquid crystal display device 1 on which the present invention is based.
【図4】パターニング処理において基板22が載置され
るプレート21の断面図である。FIG. 4 is a sectional view of a plate 21 on which a substrate 22 is placed in a patterning process.
2,3,32 絶縁性基板 10 絵素電極基板 14 ブラックマスク基板 2, 3, 32 Insulating substrate 10 Pixel electrode substrate 14 Black mask substrate
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 実開 昭62−69216(JP,U) 実開 昭63−157054(JP,U) (58)調査した分野(Int.Cl.7,DB名) G02F 1/1333 500 G02F 1/13 101 H01L 21/84 G09F 9/00 G09F 9/30 - 9/46 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A 62-69216 (JP, U) JP-A 63-157054 (JP, U) (58) Fields studied (Int. Cl. 7 , DB name) G02F 1/1333 500 G02F 1/13 101 H01L 21/84 G09F 9/00 G09F 9/30-9/46
Claims (1)
ーンの薄膜を形成する薄膜加工方法において、 前記薄膜を形成する工程のうちの少なくとも1つの工程
の実行に先立って、前記絶縁性基板の他方表面に、絶縁
性基板を載置するプレート上での滑りをよくするための
凹凸を形成することを特徴とする薄膜加工方法。1. A thin film processing method for forming a thin film having a predetermined pattern on one surface of an insulating substrate, wherein at least one of the steps of forming the thin film is performed prior to execution of the other of the insulating substrate. A method for processing a thin film, comprising forming irregularities on a surface of a plate on which an insulative substrate is placed so as to improve sliding on the plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34919392A JP3157934B2 (en) | 1992-12-28 | 1992-12-28 | Thin film processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34919392A JP3157934B2 (en) | 1992-12-28 | 1992-12-28 | Thin film processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06202089A JPH06202089A (en) | 1994-07-22 |
| JP3157934B2 true JP3157934B2 (en) | 2001-04-23 |
Family
ID=18402103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34919392A Expired - Lifetime JP3157934B2 (en) | 1992-12-28 | 1992-12-28 | Thin film processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3157934B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108439327A (en) * | 2018-02-02 | 2018-08-24 | 中国计量大学 | A kind of preparation method of the micro- hemispherical arrays of silicon substrate MEMS |
-
1992
- 1992-12-28 JP JP34919392A patent/JP3157934B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06202089A (en) | 1994-07-22 |
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